CN115747733A - Deposition ring for sputtering and application thereof - Google Patents
Deposition ring for sputtering and application thereof Download PDFInfo
- Publication number
- CN115747733A CN115747733A CN202211491032.7A CN202211491032A CN115747733A CN 115747733 A CN115747733 A CN 115747733A CN 202211491032 A CN202211491032 A CN 202211491032A CN 115747733 A CN115747733 A CN 115747733A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- deposition ring
- groove
- ring
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 98
- 230000008021 deposition Effects 0.000 title claims abstract description 98
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 95
- 230000001681 protective effect Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005477 sputtering target Methods 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- 238000009434 installation Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a deposition ring for sputtering and application thereof, wherein the deposition ring for sputtering comprises a connecting part and a first extending end, and the upper surface of the first extending end faces away from the connecting part and is sequentially provided with a first groove, a first bulge, a second groove, a plane and a second bulge; patterns are arranged on the surface of the first protrusion to form an annular pattern belt; the deposition ring for sputtering greatly increases the surface roughness through the optimization of the structure and the design of patterns, and can effectively increase the online service life and the recycling times through controlling the clearance between the deposition ring and the protective ring during assembly, thereby saving the cost and having better industrial application prospect.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a deposition ring for sputtering and application thereof.
Background
The sputtering coating is a vacuum film deposition technology, which utilizes ions generated by an ion source to form high-speed ion beam current through accelerated aggregation in vacuum under the vacuum condition, bombards the surface of a solid, and enables the ions and atoms on the surface of the solid to generate kinetic energy exchange so as to enable the atoms on the surface of the solid to leave the solid and be deposited on the surface of a substrate material wafer.
In the sputtering coating process, a large amount of surface atoms are sputtered and scattered to be deposited on a substrate to form a thin film material, a scattered part is deposited on a sputtering base station, and in order to protect the sputtering base station, a deposition ring and a process kit are arranged above a wafer to prevent the sputtered atoms from falling into a cavity to be deposited.
CN212392209U discloses, as an example, a process kit for use in a multi-cathode processing chamber, a multi-cathode processing chamber and a process kit part for use in a multi-cathode processing chamber, comprising: a tapered shield, a rotatable shield, a shroud, an inner deposition ring, an outer deposition ring, or a cover ring. An inner deposition ring having a leg portion, a flat portion extending inwardly from the leg portion, a first recess extending inwardly from the flat portion, and a first lip extending upwardly from an innermost section of the first recess; an outer deposition ring having a collar portion, an upper flat portion extending above and inwardly from the collar portion, a second recess extending inwardly from the upper flat portion, and a second lip extending upwardly from the second recess.
CN207775341U discloses sputtering equipment, which comprises an electrostatic chuck, a deposition ring and a protective ring; the deposition ring surrounds at least one part of the side edge of the electrostatic chuck, a gap is formed between the deposition ring and the side edge of the electrostatic chuck, and the upper surface of one side, close to the side edge of the electrostatic chuck, of the deposition ring is lower than the upper surface of the electrostatic chuck; the upper surface of the deposition ring is also provided with a convex part, and the highest point of the convex part is higher than the upper surface of the electrostatic chuck; the protective ring is arranged between the electrostatic chuck and the deposition ring and surrounds the upper surface edge of one side and the upper edge of the side surface of the deposition ring close to the side edge of the electrostatic chuck.
However, the existing deposition ring has the defects of easy peeling of adsorbed sputtering atoms and short service life. Therefore, how to provide a deposition ring for sputtering that can adsorb more sputtered atoms and prolong the service life is a problem to be solved.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a deposition ring for sputtering and application thereof.
If the purpose is achieved, the invention adopts the following technical scheme:
in a first aspect, the invention provides a deposition ring for sputtering, which comprises a connecting part and a first extending end, wherein the upper surface of the first extending end faces away from the connecting part, and is sequentially provided with a first groove, a first bulge, a second groove, a plane and a second bulge;
patterns are arranged on the surface of the first protrusion to form an annular pattern belt.
The contact sputtering surface of the existing deposition ring has certain roughness after sand blasting and spray melting treatment, and can adsorb sputtering atoms. However, as sputtering continues, surface atoms deposit more and become thicker, and when the thickness reaches a certain value, the roughness of the surface of the deposition ring does not meet the requirement, and at the moment, the surface atoms are peeled off, and particles are generated in the PVD chamber, so that the coating of the chamber and the surface of the wafer is influenced. However, the improvement and increase of the surface roughness are difficult in the prior sand blasting and meltallizing technology, so that the surface roughness of the deposition ring is greatly improved by optimizing the structure of the deposition ring and simultaneously combining the arrangement of patterns, the deposition adsorption capacity is further improved, the online service time and the service life are prolonged, the repeated use times of the deposition ring can be increased, and the economic benefit is better.
In the invention, the assembly structure of the first groove, the first bulge and the second groove can prevent atoms from penetrating by using gaps, thereby protecting the chamber from deposition; the decorative pattern can be obtained through mechanical processing, and is simple and efficient.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
As a preferable aspect of the present invention, the first concave groove and the second concave groove are arc-shaped concave grooves, respectively and independently.
As a preferable technical solution of the present invention, the first protrusion is a circular arc protrusion.
Preferably, the highest point of the first protrusion is at a distance of 1.4-1.6mm, such as 1.4mm, 1.45mm, 1.5mm, 1.55mm, or 1.6mm, etc., from the second protrusion, but not limited to the recited values, and other unrecited values within this range of values are equally applicable.
In the invention, the distance between the highest point of the first bulge and the middle line of the second bulge is specifically defined.
As a preferable technical scheme of the invention, the pattern of the pattern comprises any one of V-shaped grooves, N-shaped grooves, X-shaped grooves or wavy grooves.
In the invention, the pattern is not limited to the above patterns, any pattern which can increase the roughness and can not damage the sputtering effect can be used, but the pattern with the optimal effect is a V-shaped groove.
Preferably, the opening angle of the V-shaped groove is 45-70 °, such as 45 °, 50 °, 55 °, 60 °, 65 °, or 70 °, but not limited to the recited values, and other values not recited in this range of values are equally applicable, preferably 58-62 °.
In a preferred embodiment of the invention, the groove width of the pattern is 0.6 to 1.2mm, for example 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm or 1.2mm, but is not limited to the values listed above, and other values not listed above within this range are equally applicable.
Preferably, the grooves of the pattern have a depth of 0.6 to 1.0mm, for example 0.6mm, 0.7mm, 0.8mm, 0.9mm or 1.0mm, but are not limited to the values listed, and other values not listed in this range are equally applicable.
In the present invention, the groove width and depth of the pattern have a very important influence on the roughness. If the width of the groove is too narrow, the processing difficulty is increased; if the width of the groove is too wide, the highest point of the first bulge is too flat, and deposition is influenced; if the depth of the groove is too shallow, the repeated use times are too few, and the cost is increased due to the increase of the number of new parts; if the depth of the groove is too deep, the processing difficulty is high, and the product is easy to deform, so that the flatness of the wafer assembling surface is influenced.
In a preferred embodiment of the present invention, the belt width of the annular rib is 7 to 10mm, for example, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm, or 10mm, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
In a preferred embodiment of the present invention, the roughness of the first raised area is 700 to 1000 μm, for example 700 μm, 750 μm, 800 μm, 850 μm, 900 μm, 950 μm or 1000 μm, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
In the invention, after the using time of the deposition ring for sputtering reaches the upper limit, the deposition ring is taken out for acid cleaning, and can be reused.
In a second aspect, the present invention provides a use of the deposition ring for sputtering of the first aspect, the deposition ring for sputtering is used in the assembly of a sputtering process apparatus, the sputtering process apparatus comprises a base station, a guard ring, a protective cover and the deposition ring for sputtering, wherein the base station is located in a sputtering chamber;
the periphery of the base station is sequentially provided with the deposition ring for sputtering, the protective ring and the protective cover;
the sputtering substrate is placed on the base, and the sputtering target is disposed above the base.
As a preferable technical scheme of the invention, the guard ring comprises a leg part and a second extending end which is arranged at the upper end of the leg part, extends towards the horizontal direction and at least partially covers the deposition ring.
Preferably, the outermost end of the second protruding end is provided with a downward arc-shaped protrusion adapted to the first groove.
In the invention, the arc-shaped protrusion on the second extending end can prevent atoms from entering the cavity, thereby playing a role in shielding and protecting.
In a preferred embodiment of the present invention, the mounting gap between the lower surface of the second protruding end of the guard ring and the upper surface of the deposition ring is 0.8 to 1.5mm, for example, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, or 1.5mm, but is not limited to the above-mentioned values, and other values not listed in the range of values are also applicable.
The optimized installation gap between the deposition ring and the protective ring needs to be controlled, and if the gap is too narrow, the installation and the use are influenced; if the gap is too wide, atoms may enter the chamber and fail to provide shielding.
Compared with the prior art, the invention has the following beneficial effects:
(1) According to the deposition ring for sputtering, the structure is optimally designed, and the surface roughness of the deposition ring is greatly improved by matching with the patterns machined by machinery, and is improved to 700-1000 mu m from the existing 25-50 mu m, so that the deposition adsorption capacity of the deposition ring is improved, the deposition ring is not easy to peel off under the condition of adsorbing more and thicker sputtering atoms, the cleanliness of a sputtering chamber is improved, and the wafer coating quality is improved;
(2) The deposition ring for sputtering effectively prolongs the online service time, has the repeated use times of more than 15 times, prolongs the total service life, reduces the purchase cost and has certain economic benefit.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a sputtering apparatus provided in embodiment 1 of the present invention.
Fig. 2 is a schematic view of an installation structure of a deposition ring and a guard ring for sputtering in a sputtering apparatus according to embodiment 1 of the present invention.
Fig. 3 is a schematic top view of a deposition ring for sputtering provided in embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of a V-shaped groove in a deposition ring for sputtering provided in embodiment 1 of the present invention.
The sputtering device comprises a sputtering chamber 1, a base 2, a deposition ring for sputtering 3, a guard ring 4, a guard shield 5, a target material for sputtering 6, a substrate 7, a connecting part 31, a first extending end 32, a first groove 33, a first protrusion 34, a second groove 35, a plane 36, a second protrusion 37, an annular pattern belt 38, a V-shaped groove 39, a groove width 391, a groove top 392, a groove bottom 393, a leg 41 and a second extending end 42.
Detailed Description
In order to better explain the present invention and to facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The following are typical, but non-limiting, examples of the present invention:
example 1:
the embodiment provides a deposition ring for sputtering, the deposition ring 3 for sputtering comprises a connecting part 31 and a first extending end 32, the upper surface of the first extending end 32 faces away from the connecting part 31, and a first groove 33, a first protrusion 34, a second groove 35, a plane 36 and a second protrusion 37 are sequentially arranged on the upper surface;
the first protrusions 34 are provided with a pattern on their surface to form an annular patterned band 38.
The first groove 33 and the second groove 35 are each independently a circular arc groove.
The first protrusion 34 is a circular arc-shaped protrusion; the highest point of the first protrusion 34 is at a distance of 1.4mm from the second protrusion 37.
The pattern of the patterns is a V-shaped groove 39; the opening angle of the V-shaped groove 39 is 60 °.
The width 391 of the V-shaped groove is 0.9mm, and the depth is 0.8mm.
The belt width of the annular patterned belt 38, i.e., the distance between the V-groove top end 392 and the V-groove bottom end 393, was 9mm.
The roughness of the first raised 34 region is 1000 μm.
The embodiment also provides sputtering process equipment assembled by using the deposition ring for sputtering, which comprises a base platform 2, a deposition ring 3 for sputtering, a protective ring 4 and a protective cover 5, wherein the base platform 2, the deposition ring 3 for sputtering, the protective ring 4 and the protective cover are positioned in a sputtering chamber 1;
the periphery of the base station 2 is sequentially provided with the deposition ring 3 for sputtering, the protective ring 4 and the protective cover 5;
the sputtering substrate is placed on the base 2, and the sputtering target 6 is provided above the base 2.
The guard ring 4 comprises a leg part 41 and a second extending end 42 which is arranged at the upper end of the leg part 41, extends towards the horizontal direction and at least partially covers the deposition ring; the outermost end of the second extending end 42 is provided with a downward arc-shaped protrusion adapted to the first groove 33.
The installation gap between the lower surface of the second extending end 42 of the guard ring 4 and the upper surface of the deposition ring is 1.0mm.
A schematic cross-sectional structure of the sputtering apparatus in this embodiment is shown in fig. 1, wherein a schematic mounting structure of the deposition ring 3 for sputtering and the guard ring 4 is shown in fig. 2, a schematic top view structure of the deposition ring 3 for sputtering is shown in fig. 3, and a schematic structural view of the V-shaped groove 39 is shown in fig. 4.
Example 2:
the embodiment provides a deposition ring for sputtering, the deposition ring 3 for sputtering comprises a connecting part 31 and a first extending end 32, the upper surface of the first extending end 32 faces away from the connecting part 31, and a first groove 33, a first protrusion 34, a second groove 35, a plane 36 and a second protrusion 37 are sequentially arranged on the upper surface;
the first protrusions 34 are provided with a pattern on their surface to form an annular patterned band 38.
The first groove 33 and the second groove 35 are each independently a circular arc groove.
The first protrusion 34 is a circular arc-shaped protrusion; the highest point of the first protrusion 34 is at a distance of 1.5mm from the second protrusion 37.
The pattern of the decorative pattern is a wave-shaped groove.
The width of the wavy groove is 0.6mm, and the depth of the wavy groove is 1.0mm.
The width of the annular pattern belt 38, i.e., the distance between the top and bottom ends of the wavy grooves, was 7mm.
The roughness of the first raised 34 region is 800 μm.
The embodiment also provides sputtering process equipment assembled by using the deposition ring for sputtering, which comprises a base platform 2, a deposition ring 3 for sputtering, a protective ring 4 and a protective cover 5, wherein the base platform 2, the deposition ring 3 for sputtering, the protective ring 4 and the protective cover are positioned in a sputtering chamber 1;
the periphery of the base station 2 is sequentially provided with the deposition ring 3 for sputtering, the protective ring 4 and the protective cover 5;
the sputtering substrate is placed on the base 2, and the sputtering target 6 is provided above the base 2.
The guard ring 4 comprises a leg part 41 and a second extending end 42 which is arranged at the upper end of the leg part 41, extends towards the horizontal direction and at least partially covers the deposition ring; the outermost end of the second extending end 42 is provided with a downward arc-shaped protrusion adapted to the first groove 33.
The installation gap between the lower surface of the second extending end 42 of the guard ring 4 and the upper surface of the deposition ring is 0.8mm.
Example 3:
the embodiment provides a deposition ring for sputtering, wherein the deposition ring 3 for sputtering comprises a connecting part 31 and a first extending end 32, and the upper surface of the first extending end 32 faces away from the connecting part 31 and is sequentially provided with a first groove 33, a first protrusion 34, a second groove 35, a plane 36 and a second protrusion 37;
the first protrusions 34 are provided with a pattern on their surface to form an annular patterned band 38.
The first groove 33 and the second groove 35 are each independently a circular arc groove.
The first protrusion 34 is a circular arc-shaped protrusion; the highest point of the first protrusion 34 is at a distance of 1.6mm from the second protrusion 37.
The pattern of the decorative pattern is an X-shaped groove.
The width of X shape recess is 1.2mm, and the degree of depth is 0.6mm.
The width of the annular pattern belt 38, i.e., the distance between the top and bottom ends of the X-shaped grooves, was 8mm.
The roughness of the first raised 34 region was 753 μm.
The embodiment also provides sputtering process equipment assembled by using the deposition ring for sputtering, which comprises a base station 2, a deposition ring 3 for sputtering, a protective ring 4 and a protective cover 5, wherein the base station 2, the deposition ring 3 for sputtering, the protective ring 4 and the protective cover 5 are positioned in a sputtering chamber 1;
the periphery of the base station 2 is sequentially provided with the deposition ring 3 for sputtering, the protective ring 4 and the protective cover 5;
the sputtering substrate is placed on the base 2, and the sputtering target 6 is provided above the base 2.
The guard ring 4 comprises a leg part 41 and a second extending end 42 which is arranged at the upper end of the leg part 41, extends towards the horizontal direction and at least partially covers the deposition ring; the outermost end of the second extending end 42 is provided with a downward arc-shaped protrusion adapted to the first groove 33.
The installation gap between the lower surface of the second extending end 42 of the guard ring 4 and the upper surface of the deposition ring is 1.5mm.
The online use times of the deposition ring of the sputtering process equipment of the embodiment 1-3 can reach more than 15 times.
Example 4:
this embodiment provides a sputtering process apparatus which is different from the sputtering process apparatus of embodiment 3 only in that: in the deposition ring used, the depth of the X-shaped groove is 0.3mm.
Resulting in a roughness of 500 μm in the area of the first protrusions 34.
The depth of the groove in the embodiment is too shallow, so that the online use times of the deposition ring are influenced, and are only 8 times.
Comparative example 1:
this embodiment provides a sputtering process apparatus which is different from the sputtering process apparatus of embodiment 2 only in that: in the sputtering deposition ring 3, the surface of the first projection 34 is not patterned. So that the roughness of the first raised 34 region is 48 μm.
The conventional deposition ring in comparative example 1 has no pattern and has a small roughness, resulting in a significantly shortened on-line service life, and the number of repeated use is only 4.
It can be seen from the above embodiments and comparative examples that the deposition ring for sputtering of the present invention greatly increases the surface roughness of the deposition ring by the optimized design of the structure and matching with the patterns machined by the machine, from the existing 25-50 μm to 700-1000 μm, thereby increasing the deposition adsorption capacity, making it not easy to peel off when adsorbing more and thicker sputtered atoms, improving the cleanliness of the sputtering chamber, and further improving the wafer coating quality; the deposition ring for sputtering effectively prolongs the online service time of the deposition ring, the repeated use times can reach more than 15 times, the repeated use times are increased, the total service life is prolonged, the purchase cost is reduced, and certain economic benefit is achieved.
The invention is illustrated by the above examples of products and detailed methods of the invention, but the invention is not limited to the above products and detailed methods, i.e. it is not meant that the invention must rely on the above products and detailed methods for its implementation. It will be apparent to those skilled in the art that any modifications to the present invention, equivalents thereof, additions of additional operations, selection of specific ways, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. The deposition ring for sputtering is characterized by comprising a connecting part and a first extending end, wherein the upper surface of the first extending end faces away from the connecting part, and is sequentially provided with a first groove, a first bulge, a second groove, a plane and a second bulge;
patterns are arranged on the surface of the first protrusion to form an annular pattern belt.
2. The deposition ring for sputtering according to claim 1, wherein the first groove and the second groove are each independently a circular arc-shaped groove.
3. The deposition ring for sputtering according to claim 1 or 2, wherein the first projection is a circular arc-shaped projection;
preferably, the distance of the highest point of the first protrusion from the second protrusion is 1.4-1.6mm.
4. The deposition ring for sputtering according to any one of claims 1 to 3, wherein the pattern of the pattern comprises any one of a V-shaped groove, an N-shaped groove, an X-shaped groove, or a wave-shaped groove;
preferably, the opening angle of the V-shaped groove is 45-70 degrees, preferably 58-62 degrees.
5. The deposition ring for sputtering according to claim 4, wherein the groove width of the pattern is 0.6 to 1.2mm;
preferably, the grooves of the pattern have a depth of 0.6-1.0mm.
6. The deposition ring for sputtering according to any one of claims 1 to 5, wherein a band width of the annular rib is 7 to 10mm.
7. The deposition ring for sputtering according to any one of claims 1 to 6, wherein the roughness of the first convex region is 700 to 1000 μm.
8. A sputtering process apparatus comprising the deposition ring for sputtering of any one of claims 1 to 7, the sputtering process apparatus further comprising a pedestal, a guard ring, and a shield positioned within the sputtering chamber;
the periphery of the base station is sequentially provided with the deposition ring for sputtering, the protective ring and the protective cover;
the sputtering substrate is placed on the base, and the sputtering target is disposed above the base.
9. The sputtering process apparatus of claim 8, wherein said guard ring comprises a leg portion and a second protruding end disposed at an upper end of said leg portion and protruding horizontally and at least partially covering said deposition ring;
preferably, the outermost end of the second protruding end is provided with a downward arc-shaped protrusion adapted to the first groove.
10. The sputtering process apparatus of claim 8, wherein the mounting gap between the lower surface of the second protruding end of the guard ring and the upper surface of the deposition ring is 0.8-1.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211491032.7A CN115747733A (en) | 2022-11-25 | 2022-11-25 | Deposition ring for sputtering and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211491032.7A CN115747733A (en) | 2022-11-25 | 2022-11-25 | Deposition ring for sputtering and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115747733A true CN115747733A (en) | 2023-03-07 |
Family
ID=85338236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211491032.7A Pending CN115747733A (en) | 2022-11-25 | 2022-11-25 | Deposition ring for sputtering and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115747733A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111602235A (en) * | 2018-01-29 | 2020-08-28 | 应用材料公司 | Process kit geometry for particle reduction in PVD processes |
| CN212392209U (en) * | 2017-06-05 | 2021-01-22 | 应用材料公司 | Process kit for use in a multi-cathode processing chamber, multi-cathode processing chamber and process kit part for use in a multi-cathode processing chamber |
| CN112501577A (en) * | 2020-11-30 | 2021-03-16 | 宁波江丰电子材料股份有限公司 | Wafer fixing ring and preparation method and application thereof |
| CN214496462U (en) * | 2021-01-29 | 2021-10-26 | 宁波江丰电子材料股份有限公司 | Magnetron sputtering component |
-
2022
- 2022-11-25 CN CN202211491032.7A patent/CN115747733A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212392209U (en) * | 2017-06-05 | 2021-01-22 | 应用材料公司 | Process kit for use in a multi-cathode processing chamber, multi-cathode processing chamber and process kit part for use in a multi-cathode processing chamber |
| CN111602235A (en) * | 2018-01-29 | 2020-08-28 | 应用材料公司 | Process kit geometry for particle reduction in PVD processes |
| CN112501577A (en) * | 2020-11-30 | 2021-03-16 | 宁波江丰电子材料股份有限公司 | Wafer fixing ring and preparation method and application thereof |
| CN214496462U (en) * | 2021-01-29 | 2021-10-26 | 宁波江丰电子材料股份有限公司 | Magnetron sputtering component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI702636B (en) | Biasable flux optimizer/collimator for pvd sputter chamber | |
| US5914018A (en) | Sputter target for eliminating redeposition on the target sidewall | |
| KR100761592B1 (en) | Contoured sputtering target and method of manufacturing the same | |
| US5810931A (en) | High aspect ratio clamp ring | |
| CN112501577B (en) | Wafer fixing ring and preparation method and application thereof | |
| US20170154758A1 (en) | Reaction chamber and semi-conductor processing device | |
| CN1825556B (en) | Wafer holder | |
| KR19980070371A (en) | Back-sputtering shield | |
| KR20050033485A (en) | Sputter target having modified surface texture | |
| US6159351A (en) | Magnet array for magnetrons | |
| US11043406B2 (en) | Two piece shutter disk assembly with self-centering feature | |
| CN115747733A (en) | Deposition ring for sputtering and application thereof | |
| CN214271030U (en) | Wafer deposition cover ring | |
| TWM610049U (en) | Thin film deposition equipment capable of inhibiting dust and shielding component thereof | |
| CN214496462U (en) | Magnetron sputtering component | |
| CN116288182A (en) | Protective ring for sputtering and application thereof | |
| CN213752622U (en) | Carrier for plasma processing wafer and wafer processing equipment | |
| CN108687488B (en) | Target blank and processing method thereof | |
| CN112466740A (en) | Carrier for plasma processing wafer and wafer processing equipment | |
| US10153135B2 (en) | Plasma etching apparatus | |
| CN220952025U (en) | Deposition ring and thin film deposition apparatus | |
| CN214378384U (en) | Wafer clamp of sputtering deposition equipment | |
| KR20030084370A (en) | Deposition ring of sputtering | |
| CN115985745A (en) | Semiconductor processing chamber and semiconductor processing equipment | |
| CN112077674A (en) | Polishing process for back plate in target assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |