CN115735272A - 保持设备及其使用 - Google Patents

保持设备及其使用 Download PDF

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CN115735272A
CN115735272A CN202180047136.6A CN202180047136A CN115735272A CN 115735272 A CN115735272 A CN 115735272A CN 202180047136 A CN202180047136 A CN 202180047136A CN 115735272 A CN115735272 A CN 115735272A
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carrier plate
plate
holding device
shielding
substrate
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M·沙佩尔
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Hanwha Q Cells GmbH
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
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    • H01—ELECTRIC ELEMENTS
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    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
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    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls

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Abstract

本发明涉及一种用于保持多个基板(4)的保持设备，该多个基板(4)用于来自基板(4)上的气相的层的等离子体辅助沉积，该保持设备具有：内载板(1)，该内载板(1)彼此平行布置，并且每个内载板都设计成在相互对立的两侧承载基板(4)；外载板(2)，该外载板(2)设置为平行于内承载板(1)并具有面向内承载板(1)的内侧和远离内承载板(1)的外侧，其中每个外载板(2)设计成在其内侧承载一个或多个基板(4)，而在其外侧没有基板；以及屏蔽板(3)，该屏蔽板(3)各自设置在距外载板(2)的外侧一定距离处，使得如外载板(2)的平面图所示，屏蔽板(3)至少主要屏蔽外载板(2)，其中每个屏蔽板(3)都设置为没有基板。本发明还涉及在来自气相的等离子体辅助沉积中，该保持设备作为用于基板(4)的保持设备的用途。

Description

保持设备及其使用
本发明涉及一种保持设备及该保持设备的使用。特别地，本发明涉及一种用于在从气相到基板上的层的等离子体辅助沉积中保持基板的保持设备，并且涉及这种保持设备的使用。
DE102015004430A1公开了一种用于在从气相到基板上的层的等离子体辅助沉积中保持多个基板的保持设备。该保持设备包括彼此平行布置的内载板，每个内载板配置为用于在相对侧承载基板。它还包括平行于内载板布置的外载板，该外载板具有面向内载板的内表面和背离内载板的外表面。每个外载板配置为在其内表面上承载一个或多个基板，并且在其外表面上没有基板。
内载板和外载板每个都包括合适的保持设备，例如基板袋、固定销等，以保持基板，其中保持设备中的各个基板必须彼此保持预定距离，以允许气体尽可能均匀地通过所有的中间空间，并在基板之间形成等离子体。这确保了基板的均匀涂覆。
保持设备，在技术术语中也称为舟，特别是用于安全地容纳用于制造太阳能电池的尽可能多的基板，以允许搬运和处理装载有基板的保持设备，而没有损坏基板的风险。
为了在化学气相沉积(例如PECVD工艺)中实现基板的涂覆，首先将基板设置在保持设备的载板上，然后将保持设备设置在化学沉积装置中，例如PECVD设备的可加热管。在沉积/涂覆过程中，将层沉积在保持设备中的基板上。然而，在涂覆之前，存在于化学气相沉积设备中的保持设备首先加热到预定的处理温度，该处理温度取决于要在基板上产生的层。加热优选通过来自外部源的沿保持设备方向作用的热辐射来实现。然而，内载板和外载板以不同的速率受热。然而，不同载板区域中的温度差异导致层沉积的不均匀结果，从而导致不希望的效率损失。
特别是在多层沉积中，例如在将AlOx(氧化铝)和SiNx(氮化硅)沉积到基板上的情况下，需要不同的工艺温度，因此需要在工艺过程中改变温度。在不同载板的区域中出现的任何温差都是不利的。
因此，本发明的目的是提供一种保持设备，其在内载板和外载板的区域中实现更均匀的温度分布，以在化学气相沉积工艺中实现薄层生产的更均匀的结果。
根据本发明，该目的通过具有权利要求1的特征的保持设备和具有权利要求9的特征的保持设备来实现。从属权利要求中指出了有利的改进和修改。
根据本发明，保持设备还包括屏蔽板，在每种情况下，所述屏蔽板设置为与所述外载板的所述外表面间隔开，使得在所述外载板的平面图中，所述屏蔽板至少在很大程度上遮蔽所述外载板，其中每个屏蔽板都配置为无基板。
本发明基于以下基本概念：在现有技术的保持设备中，在沉积过程中，入射到保持设备上的热辐射直接影响保持设备的外载板。然而，外载板遮蔽设置在两个外载板之间的内载板。这导致外载板比内载板经受明显更快的加热。为了确保保持设备在其所有外载板和内载板的区域中具有相同的温度，必须允许经过一定量的时间。这同样适用于工艺过程中的冷却或从一个工艺过渡到下一个工艺过程中的冷却。如果保持设备的周围是散热器，内载板比外载板需要更长的时间来冷却。载板和内板的空间分布上的特定温度梯度是可接受的，或者需要等待适当的时间长度，直到建立了期望的热平衡。
太短的等待时间经常导致在基板上的层沉积过程中出现与温度相关的不均匀性。由于这些原因，屏蔽板设置成具有热屏蔽的功能。实现这种布置，使得在很大程度上阻止热辐射从围绕保持设备的沉积装置的组成元件直接入射到外载板上。屏蔽板同样降低了外载板的冷却速率。其导致的结果是，外载板的动态温度曲线接近内载板的动态温度曲线，使得所有承载基板的载板具有理想的相同或至少足够相似的温度曲线。
“在所述外载板的平面图中，所述屏蔽板至少在很大程度上遮蔽所述外载板”这一措辞应理解为意味着在所述外载板的垂直平面图中，所述屏蔽板实现了几何遮蔽>50％、优选>70％、更优选>90％、且更优选100％的所述外载板面积。
术语“无基板”应理解为这种无基板的板在结构上配置为在沉积过程中不承载基板。配置为用于承载基板的板包括例如保持装置，例如诸如基板袋、固定销之类的结构元件，以固定所述基板。
特别地，所述保持设备配置为用于化学气相沉积设备的舟，所述化学气相沉积设备优选为PECVD沉积设备，更优选为管状PECVD设备。所述保持设备尤其包括两个外载板，以及在每种情况下，即总共两个相关联的屏蔽板。
在一个优选实施例中，所述屏蔽板和所述外载板以及所述内载板是平的，并且设置为基本上彼此平行。术语“平的”应理解为意指平坦的、优选平面的、连续的结构。然而，该结构也可以具有平面内的开口。
可选地或附加地，在每种情况下，所述屏蔽板优选地设置为与所述外载板的所述外表面平行地间隔开。所述内载板和所述外载板优选都通过一个或多个杆彼此连接，且因此以预定的距离彼此间隔开。例如，所述内载板和所述外载板使用隔离物彼此间隔开，所述隔离物封装所述杆的一部分。通过这些一个或多个杆，所述屏蔽板也可以连接到所述内载板和所述外载板，并且因此以距离所述外载板的进一步的预定距离与所述外载板间隔开，其中所述预定距离和所述进一步的预定距离可以相同或不同。然而，所述屏蔽板也可以通过其他连接方式安装到保持设备上。
在优选实施例中，所述屏蔽板的长度和/或宽度尺寸小于所述外载板的长度和/或宽度尺寸。这确保了保持设备最佳地利用化学沉积设备中的空间。
至少当在化学沉积设备中时，所述内载板和所述外载板相对于彼此绝缘，并且交替地连接到交流电压发生器的接头，以使在沉积过程的执行期间产生等离子体。当在化学沉积设备中使用保持设备时，所述屏蔽板优选地为无电接触，并且也不连接到交流电压发生器的接头。可选地，优选的是，所述屏蔽板具有电接触，并且连接到交流电压发生器的接头。它们优选具有与紧邻的所述外载板相同的极性。
在另一个优选实施例中，每个屏蔽板包括冷却装置。这是影响屏蔽板的温度动力学的简单方式，因此也间接影响相邻的所述外载板。
所述冷却装置优选为每个屏蔽板的肋状和/或波浪形表面结构的形式。因此，所述表面结构包括类似于肋和/或波浪的隆起，以扩大所述屏蔽板的表面积。这是一种易于实现的冷却装置，使得影响所述屏蔽板的温度动力学成为可能。
所述屏蔽板可以是单层的或多层的。它们优选为多层的，这进一步改善了屏蔽。
在优选实施例中，屏蔽板由选自石墨、碳纤维增强塑料或碳纤维增强碳的基材(base material)制成。碳化物、石英或陶瓷也可以用作所述基材。
所述基材可以是未涂覆的。然而，所述基材也可以设有涂层。优选地选择所述涂层，使得所述涂层是红外辐射的良好反射体，同时优选地选择所述基材，使得即使在热的时候，它也理想地比所述涂层辐射更少的红外辐射。
所述屏蔽板的外表面优选设有金属层形式的涂层。这进一步实现了选择所述屏蔽板的所述外表面的良好热反射。所述金属层优选为耐腐蚀的贵金属层的形式。所述贵金属层例如是金或铂层。所述屏蔽板的所述外表面可以在其部分或全部区域上设有所述层。它们优选在其全部面积上设有一层。
所述内载板和所述外载板优选由选自石墨、碳纤维增强塑料或碳纤维增强碳的材料制成。所述材料可以是未涂覆的或涂覆的。
所述内载板和所述外载板优选包括切口，所述基板可以容纳在所述切口中。例如，所述内载板和所述外载板各自具有一个或多个基板袋。这些都用作基板的保持装置。所述内载板和所述外载板还可以各自包括固定销，以保持基板。
所述屏蔽板也可以包括切口、开口或孔。然而，必须确保所述孔和开口的尺寸能够实现所需的热屏蔽程度。
在优选实施例中，所述屏蔽板没有切口、开口和孔。也就是说，它们不包括凹陷、开口或孔，这确保了高屏蔽。
根据一个或多个上述实施例的保持设备，本发明还涉及在来自气相的等离子体辅助沉积(plasma-assisted deposition)中作为用于基板的保持设备的用途，特别是由半导体晶片加工出的太阳能电池。
根据本发明的用途，提供了配置为用于气相沉积设备的舟的保持设备用作在来自气相的等离子体辅助沉积中的用于基板的保持设备。这允许了特别均匀和容易地涂覆所述基板。由于所述屏蔽板的存在，在加热和冷却过程中，外载板相对于内载板的温度动力学近似相等，因此减少了必须完成温度分布随时间变化的涂覆过程的持续时间。
因此，所述保持设备特别适用于在有限时间内温度稳定的所有化学气相沉积工艺。所述保持设备优选用于采用管状PECVD设备的所有沉积工艺，尤其优选用于在不同工艺温度下的同一沉积设备中连续沉积两层或多层的沉积工艺。
例如，所述基板是晶片。所述基板优选为硅基板，更优选为硅太阳能电池基板。来自气相的等离子体辅助沉积优选为CVD(化学气相沉积)或PECVD(等离子体增强化学气相沉积)工艺。
所述保持设备优选用于沉积中，其中硅、氮化硅或氮氧化硅、碳化硅和/或氧化铝从气相沉积在所述基板上。沉积层可以是导电层，其中上述层掺有杂质。
下面将结合附图中所示的实施例清楚地描述本发明的进一步的特性和优点。在示意性且未按比例绘制的附图中：
图1示出了化学沉积设备的处理室的截面图，其中设置了根据本发明的保持设备。
图1示出了化学沉积设备的处理室的截面图，其中设置了根据本发明的保持设备。根据本发明的所述保持设备设置于管状PECVD沉积设备的处理室5中。
保持设备包括多个彼此平行布置的内载板1。每个内载板1配置为在相对侧承载一个或多个基板4。保持设备还包括平行于内载板1布置的两个外载板2，每个外载板具有面向内载板1的内表面和背离内载板1的外表面。每个外载板2配置为在其内表面上承载一个或多个基板4，并且在其外表面上没有基板，使得在层的沉积期间，在其外表面上没有基板。内载板1和外载板2通过一个或多个杆(未示出)彼此连接，并通过间隔物(同样未示出)彼此间隔开预定距离。
保持设备还包括两个屏蔽板3，这两个屏蔽板3在每种情况下都与外载板2的外表面间隔开，使得在外载板2的平面图中，屏蔽板3至少在很大程度上遮挡外载板2。每个屏蔽板3都配置成无基板，即所述板不包括允许固定一个基板或多个基板的任何结构。
保持设备设置在处理室5中，以通过化学气相反应在基板4上沉积一层或多层。为此，通过加热装置(未示出)加热处理室5，这导致了包括基板4和管状处理室5的壁的加热装置同样受到加热。处理室5的壁辐射热量，如从处理室的壁发出的短箭头所示。屏蔽板3很大程度上屏蔽了外载板2，以使其免受热辐射，该热辐射从处理室5的壁朝着外载板2的方向发出。结果，来自处理室5的壁的热辐射的一部分最开始主要作用在屏蔽板3上，接着作用在外载板2上，其中来自处理室的壁的热辐射的剩余部分入射在内载板1和外载板2上。在为特定沉积工艺来优化屏蔽板的温度动力学的情况下，可以实现外载板相对于内载板的基本相似的温度分布。
参考数字列表：
1 内载板
2 外载板
3 屏蔽板
4 基板
5 处理室

Claims (11)

1.一种保持设备，用于在从气相到基板(4)上的层的等离子体辅助沉积中保持多个基板(4)，包括：
-内载板(1)，所述内载板(1)设置为彼此平行，每个所述内载板配置为用于在相对侧承载基板(4)；
-外载板(2)，所述外载板(2)设置为平行于所述内载板(1)，所述外载板(2)具有面向所述内载板(1)的内表面和远离所述内载板(1)的外表面，其中每个外载板(2)配置用于在其内表面上承载一个或多个基板(4)并且在其外表面上没有基板；以及
-屏蔽板(3)，所述屏蔽板(3)设置为在每种情况下与所述外载板(2)的外侧间隔开，使得在所述外载板(2)的平面图中，所述屏蔽板(3)至少在很大程度上遮蔽所述外载板(2)，其中每个屏蔽板(3)配置为无基板。
2.根据权利要求1所述的保持设备，其特征在于，所述屏蔽板(3)和所述外载板(2)以及所述内载板(1)是平的，并且设置为基本上彼此平行，和/或所述屏蔽板(3)设置为在每种情况下与所述外载板(2)的所述外表面平行地间隔开。
3.根据前述权利要求中任一项所述的保持设备，其特征在于，所述屏蔽板(3)的长度和/或宽度尺寸小于所述外载板(2)的长度和/或宽度尺寸。
4.根据前述权利要求中任一项所述的保持设备，其特征在于，所述屏蔽板(3)没有电接触或者具有与紧邻所述屏蔽板(3)的所述外载板(2)相同的极性。
5.根据前述权利要求中任一项所述的保持设备，其特征在于，每个屏蔽板(3)包括冷却装置。
6.根据权利要求5所述的保持设备，其特征在于，所述冷却装置是每个屏蔽板(3)的肋状和/或波浪形表面结构的形式。
7.根据前述权利要求中任一项所述的保持设备，其特征在于，所述屏蔽板(3)是多层的。
8.根据前述权利要求中任一项所述的保持设备，其特征在于，所述屏蔽板(3)由选自石墨、碳纤维增强塑料或碳纤维增强碳的基材制成。
9.根据权利要求8所述的保持设备，其特征在于，所述屏蔽板(3)的外表面优选地设有金属层形式的涂层，特别是贵金属层。
10.根据前述权利要求中任一项所述的保持设备，其特征在于，所述内载板(1)和所述外载板(2)包括切口，所述基板(4)能够容纳在所述切口中，和/或所述屏蔽板(3)没有切口、开口和孔。
11.根据前述权利要求中任一项所述的保持设备在来自气相的等离子体辅助沉积中作为用于基板(4)的保持设备的用途。
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