CN115722784A - 具有变化的表面轮廓的扩散焊接预制件 - Google Patents

具有变化的表面轮廓的扩散焊接预制件 Download PDF

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Publication number
CN115722784A
CN115722784A CN202211052969.4A CN202211052969A CN115722784A CN 115722784 A CN115722784 A CN 115722784A CN 202211052969 A CN202211052969 A CN 202211052969A CN 115722784 A CN115722784 A CN 115722784A
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Prior art keywords
solder
substrate
semiconductor die
solder preform
interface surface
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CN202211052969.4A
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English (en)
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K·特鲁诺夫
T·亨德里克斯
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Publication of CN115722784A publication Critical patent/CN115722784A/zh
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Abstract

本公开内容涉及具有变化的表面轮廓的扩散焊接预制件。一种焊接方法包括：提供具有第一金属相接表面的衬底；提供具有第二金属相接表面的半导体管芯；提供具有第一界面表面和第二界面表面的焊料预制件；将焊料预制件布置在衬底和半导体管芯之间，使得第一界面表面面对第一金属相接表面，并且使得第二界面表面面对第二金属相接表面；以及执行无机械压力的扩散焊接工艺，该扩散焊接工艺通过以下方式在衬底和半导体管芯之间形成焊接接头，所述方式为使焊料预制件熔化并且在焊接接头中形成金属间相。第一界面表面和第二界面表面之一或两者具有变化的表面轮廓，所述变化的表面轮廓在焊料预制件熔化之前在衬底和半导体管芯之一或两者与焊料预制件之间产生孔洞。

Description

具有变化的表面轮廓的扩散焊接预制件
背景技术
在半导体技术的进步当中，热和电性能起着越来越重要的作用。这些与微型化和提高的性能密切相关的因素要求高性能管芯(芯片)附接工艺和材料。扩散焊接是一种此类管芯附接工艺。
可以通过将一层焊料材料溅射到半导体晶圆的背面上来执行扩散焊接。焊料材料的沉积占整个晶圆成本的很大一部分。根据基于机械压力的扩散焊接技术，在焊料回流期间各个地向每一管芯施加机械压力，并且必须保持该机械压力，直到焊料的很大部分已经等温固化为止。这限制了管芯附接工艺的吞吐量。此外，焊接温度必须高，从而能够在短时间内实现充分反映和等温固化。替代性地，可以采用无机械压力(mechanical pressure-free)的扩散焊接技术，以促进部件的更有效率的批量焊接。然而，无机械压力的扩散焊接技术引入了影响焊接接头的质量的单独挑战。
因而，需要改进的扩散焊接技术。
发明内容
一种焊接半导体器件的方法。根据实施例，该方法包括：提供包括第一金属相接表面的衬底；提供包括第二金属相接表面的半导体管芯；提供包括第一界面表面和与该第一界面表面相反的第二界面表面的焊料预制件；将焊料预制件布置在衬底和半导体管芯之间，使得第一界面表面面对第一金属相接表面，并且使得第二界面表面面对第二金属相接表面；以及执行无机械压力的扩散焊接工艺，该扩散焊接工艺通过以下方式在衬底和半导体管芯之间形成焊接接头，所述方式为使焊料预制件熔化并且在焊接接头中形成金属间相(intermetallic phase)；其中，第一界面表面和第二界面表面之一或两者具有变化的表面轮廓，该变化的表面轮廓在焊料预制件熔化之前在衬底和半导体管芯之一或两者与焊料预制件之间产生孔洞。
独立地或组合地，变化的表面轮廓包括多个脊和设置在所述脊中的紧邻的脊之间的通道，并且其中，所述通道在衬底和半导体管芯之间的焊料预制件的布置结构(arrangement)中产生孔洞。
独立地或组合地，通道中的至少一者完全在焊料预制件的两个边缘侧之间横向延伸。
独立地或组合地，通道中的至少一者从焊料预制件的一个边缘侧横向延伸至焊料预制件的中央区域，其中，该中央区域与焊料预制件的每一边缘侧间隔开焊料预制件的最小宽度的至少百分之二十五。
独立地或组合地，所述脊和通道沿焊料预制件的与脊正交的截面具有起伏轮廓。
独立地或组合地，第一界面表面和第二界面表面两者具有相同的起伏轮廓，并且其中，焊料预制件沿该焊料预制件的与脊正交的截面具有基本均匀的厚度。
独立地或组合地，焊料预制件的厚度处于5μm和15μm之间。
独立地或组合地，所述脊中的两个紧邻的脊之间的分隔距离处于焊料预制件的厚度的两倍和五十倍之间。
独立地或组合地，变化的表面轮廓使得多个脊规律地相互间隔开固定分隔距离，该固定分隔距离处于焊料预制件的厚度的二倍和五十倍之间。
独立地或组合地，焊料预制件在第一界面表面和第二界面表面之间的最大垂直位移处于焊料预制件的厚度的四倍和焊料预制件的厚度的十倍之间。
独立地或组合地，焊料预制件包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。
独立地或组合地，执行无机械压力的扩散焊接工艺包括调节步骤，该调节步骤从位于衬底和半导体管芯之间的焊料预制件的布置结构中去除定位剂(tacking agent)。
独立地或组合地，执行无机械压力的扩散焊接工艺包括活化步骤，该活化步骤向包含位于衬底和半导体管芯之间的焊料预制件的布置结构的焊接炉中引入甲酸。
根据另一实施例，该方法包括：提供包括第一金属相接表面的衬底；提供包括第二金属相接表面的半导体管芯；提供包括第一界面表面和与第一界面表面相反的第二界面表面的焊料预制件；将该焊料预制件布置在衬底和半导体管芯之间，使得第一界面表面面对第一金属相接表面，并且使得第二界面表面面对第二金属相接表面；将位于衬底和半导体管芯之间的焊料预制件的布置结构置于焊接炉中；在焊料预制件的布置结构包含于焊接炉中的情况下，在处于焊料预制件的回流温度以下的焊接炉中执行一种或多种预焊接步骤；提高焊接炉的温度以达到焊料预制件的熔化温度，从而使该焊料预制件熔化并且与第一和第二金属相接表面反应，以在无需对该布置结构施加机械压力的情况下在焊接接头中形成金属间相，其中，在预焊接步骤期间，位于衬底和半导体管芯之间的焊料预制件的布置结构包括位于衬底和半导体管芯之一或两者与焊料预制件之间的通道，并且其中，所述通道允许焊接炉内的环境大气的进出。
独立地或组合地，通道中的至少一者为环境大气提供了完整通路，以在焊料预制件的两个边缘侧之间流动。
独立地或组合地，通道中的至少一者允许环境大气抵达焊料预制件的中央区域，其中，该中央区域与焊料预制件的每一边缘侧间隔开至少1mm。
独立地或组合地，布置焊料预制件包括在衬底和半导体管芯之一或两者与焊料预制件之间提供定位剂，并且其中，执行一个或多个预焊接步骤包括提高焊接炉中的温度的调节步骤，并且其中，在调节步骤期间通过通道对定位剂的蒸汽进行排气。
独立地或组合地，执行一个或多个预焊接步骤包括向焊接炉中引入甲酸的活化步骤，并且其中，焊接炉的环境大气包括甲酸并且在活化步骤期间通过通道流动。
独立地或组合地，焊料预制件的厚度处于5μm和15μm之间。
独立地或组合地，焊接炉中的温度在一个或多个预焊接步骤期间不超过200℃。
附图说明
附图中的元件未必是相对于彼此按比例绘制的。类似的附图标记表示对应的类似部分。可以对各种例示实施例中的特征进行组合，除非它们相互排斥。在附图中对实施例给出了图示并且将在下文的描述中对实施例进行详述。
图1A-图1D示出了根据实施例的用于形成位于衬底和半导体管芯之间的焊料预制件的布置结构的步骤。
图2示出了根据实施例的包含位于衬底和半导体管芯之间的焊料预制件的布置结构的焊接炉。
图3示出了根据实施例的位于衬底和半导体管芯之间的焊料预制件的布置结构的侧视图，其中，该焊料预制件具有变化的表面轮廓。
图4示出了根据实施例的具有变化的表面轮廓的焊料预制件的平面图。
图5A-图5C示出了根据各种实施例的具有变化的表面轮廓的焊料预制件的侧视图。
具体实施方式
本文描述了利用有利地配置的焊料预制件的无机械压力的扩散焊接技术。该焊料预制件包括位于该焊料预制件的与焊接接头中的金属相接表面对接的一个或两个表面上的变化的表面轮廓。该变化的表面轮廓具有非平面几何结构，该非平面几何结构在焊料被熔化之前在焊料预制件与半导体管芯之间和/或在焊料预制件与衬底之间产生孔洞。这些孔洞形成了在预焊接步骤期间允许排气的通道，该预焊接步骤是在焊料预制件熔化之前对组件执行的。这些预焊接步骤可以包括从该组件去除定位剂的初始步骤和对该组件的焊接表面去氧化的后续步骤。因此，在焊料预制件与半导体管芯之间和/或在焊料预制件与衬底之间具有改善的润湿性，并且因而提高了所完成的焊接接头的质量。
参考图1A-图1D，示出了用于在衬底102和半导体管芯104之间布置焊料预制件100的选定步骤。尽管这些图示出了具有单个半导体管芯104的布置结构，但是本文描述的技术更一般地适用于同时焊接多个半导体管芯104的批量焊接技术。根据这些批量焊接技术，可以根据相同工艺将不止一个半导体管芯104焊接到相同或不同衬底102上。这些半导体管芯104可以彼此相同或不同。
参考图1A，提供包括第一金属相接表面106的衬底102。衬底102是被配置为容纳半导体管芯104和/或无源电气元件在其上安装的载体。例如，衬底102可以是PCB(印刷电路板)或者功率电子元件衬底102，诸如DBC(直接接合铜)衬底、AMB(活性金属钎焊)衬底、或者绝缘金属衬底(IMS)。在这些示例中，衬底102可以包括一个或多个由陶瓷(Al2O3、AlN等)、塑料、层压体、预浸材料(FR-2、FR-4、CEM-1、G-10等)形成的电介质层(未示出)，以及设置在衬底102的上表面上的结构化金属化层，其中，第一金属相接表面106对应于这一结构化金属化层的管芯附接表面。替代性地，衬底102可以是专门的金属结构，例如，铅框架。第一金属相接表面106可以是通过金属结构提供的，所述金属结构包括或者镀有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au或NiP/Pd/AuAg中的任何一者或多者。在实施例中，第一金属相接表面106是由Cu或者Cu合金形成的接合焊盘或者管芯焊盘，并且具有形成于Cu或Cu合金的外表面上的基于Ni的涂层。
向第一金属相接表面106施加定位剂108。定位剂108是用于使焊料预制件100和半导体管芯104的组件在向焊接炉运送期间保持在适当位置上的惰性物质。一般而言，定位剂108可以是任何通过表面张力使焊料预制件100在衬底102上保持在适当位置上的不挥发、非反应性液体。例如，定位剂108可以是市售非反应性液体，例如，由
Figure BDA0003824037170000031
生产的
Figure BDA0003824037170000032
电子液体FC-43。
参考图1B，提供包括第一界面表面110和与第一界面表面110相反的第二界面表面112的焊料预制件100。该焊料预制件100可以包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。例如，焊料预制件100可以包括Sn/Ag/Cu、Sn/Ag、Sn/Ag/Sb、Sn/Sb、Sn/Cu、或Au80/Sn20。也可以采用其他类型的薄焊料预制件100。
参考图1C，在将焊料预制件100布置在衬底102上之后，额外地向焊料预制件100的第二界面表面112施加定位剂108。在这一步骤中使用的定位剂108可以与用于将焊料预制件100固定至衬底102的定位剂108相同或不同。
参考图1D，提供半导体管芯104。半导体管芯104包括将焊接至衬底102的第二金属相接表面114。第二金属相接表面114可以是半导体管芯104的接合焊盘。该接合焊盘可以包括和/或镀有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au、NiP/Pd/AuAg、NiV/Ag、NiV/Au、或NiSi/Ag。一般而言，半导体管芯104可以具有任何器件配置。在实施例中，半导体管芯104被配置为功率晶体管，诸如MOSFET(金属氧化物半导体场效应晶体管)、IGBT(绝缘栅双极型晶体管)、HEMT(高电子迁移率晶体管)等。替代性地，半导体管芯104可以被配置为逻辑管芯，诸如栅极驱动器、微控制器、存储器等，或者可以被配置为无源管芯，诸如电感器或电容器管芯等。在这些示例中，第二金属相接表面114可以是提供对器件端子(例如，源极、漏极、集电极、发射极、栅极、阳极等)的外部访问能力的接合焊盘。
半导体管芯104被布置在焊料预制件100上，使得第二金属相接表面114面对焊料预制件100，其中定位剂108设置于两者之间。定位剂108通过表面张力保持半导体管芯104相对于焊料预制件100的位置。可以采用夹固机构(未示出)操纵焊料预制件100并且将组件运送到扩散焊接烤炉。
作为图1A-图1D中所示的步骤的结果，焊料预制件100被布置在衬底102和半导体管芯104之间，使得第一界面表面110面对第一金属相接表面106，并且使得第二界面表面112面对第二金属相接表面114。可以采用替代方法来获得相同布置结构。例如，在另一实施例中，最初将焊料预制件100施加至半导体管芯104。在这种情况下，图1B中的衬底102可替代性地是半导体管芯104或者半导体晶圆(由其生成管芯)。例如，焊料预制件100可以被施加至包括半导体管芯104以及多个额外半导体管芯104的半导体晶圆的正面或背面，或者可以在管芯单个化过程之后被施加至半导体管芯104的正面或背面。接下来，可以将具有焊料预制件100的半导体管芯104置于衬底102的第一金属相接表面106上，其中定位剂108位于其间。
参考图2，参考图1A-图1D描述的位于衬底102和半导体管芯104之间的焊料预制件100的布置结构116被置于焊接炉118中。焊接炉118可以是真空烤炉，其被配置为对组件施加热量120并且同时改变焊接炉118内的压力，包括改变到真空条件。
利用焊接炉118内包含的布置结构116，能够执行形成衬底102和半导体管芯104之间的焊接接头的无机械压力的扩散焊接工艺。根据这种技术，对布置结构116施加热量120，从而使焊料预制件100熔化并且与第一和第二金属相接表面106、114反应，从而形成焊接接头中的金属间相。金属间相是由两种或更多种不同金属构成的的化学化合物，其具有与构成它的元素不同的晶体学结构。例如，就在基于Cu的金属表面之间提供的基于Sn的焊料材料而言，焊接接头可以包括CuSn的金属间相，其具有与合金CuSn或者金属Cu和金属Sn不同的晶体学特性。如果第一金属相接表面106包括与第二金属相接表面114不同的金属/金属合金，那么将在整个焊接接头中形成多种不同金属间相。金属间相具有比形成金属间相的软焊料合金(例如，以上示例中的SnCu或SnSb2)更高的熔点。焊接接头中的金属间相的存在使得该焊接接头具有高抗拉强度，其相对于由高温操作引起的热膨胀力具有耐久性。可以对焊接工艺的条件(例如，时间和温度)加以选择，从而使焊接接头的很大百分比由金属间相构成，例如，大于50％、大于75％等的金属间相比例。此外或替代性地，可以对焊接工艺的条件加以选择，从而使金属间相存在于整个焊接接头的整个厚度处。
扩散焊接工艺是一种无机械压力的扩散焊接工艺。这意味着，在焊料材料熔化和反应期间和/或后续硬化阶段期间，不直接向半导体管芯104(例如，从可移动压力机)施加机械压力。为了产生具有预期金属间相特征(例如，如上文所述的金属间相比例和/或金属间相的分布)的焊接接头，例如，可以采用相对较薄的焊料预制件100，例如，不超过50μm并且更一般地小于30μm的厚度。
无机械压力的扩散焊接工艺可以包括在焊料预制件100的回流(熔化)之前在焊接炉118中执行一个或多个预焊接步骤。在这些预焊接步骤期间，使焊接炉118的温度保持在焊料预制件100的回流温度以下。例如，在一个或多个预焊接步骤期间，焊接炉118中的温度可以不超过200℃。可以执行这些预焊接步骤，以消除焊接炉118的污染和/或以准备在衬底102和半导体管芯104之间的焊料预制件100的布置结构116，以增强焊料材料的润湿性。
根据实施例，预焊接步骤包括调节步骤。该调节步骤通过去除污染物而对焊接炉118的腔室进行调节。此外，该调节步骤使在先前组装步骤期间用于保持半导体管芯104的相对于焊料预制件100的位置的定位剂108蒸发。该调节步骤可以包括使焊接炉118中的温度从室温逐渐提升至100℃到150℃的最终温度。该调节步骤可以包括使腔室中的压强在高压条件与真空条件之间循环。该调节步骤的持续时间可以处于300秒和500秒之间。
根据实施例，预焊接步骤包括活化步骤。该活化步骤从焊料预制件100以及第一和第二金属相接表面106、114去除氧化物，从而使这些表面活化，以增强润湿性。该活化步骤可以包括向焊接炉118内引入去氧化剂(例如，甲酸(H2CO2))，从而使焊接炉118的环境大气122包括气体形式的去氧化剂。可以在调节步骤之后立即执行活化步骤。在活化步骤期间，焊接炉118的温度可以从调节步骤的温度逐渐升高，同时仍然处于焊料预制件100的回流温度以下。例如，活化步骤可以开始于大约100℃到150℃的温度并且结束于不超过180℃到190℃的温度。活化步骤的持续时间可以处于420秒和540秒之间。
在执行预焊接步骤之后，提高焊接炉118的温度，从而在焊料预制件100中产生反应，并且产生焊接接头。在初始熔化阶段期间，提高焊接炉118的温度，以达到焊料预制件100的熔化温度。这一初始熔化阶段可以开始于大约180℃到190℃的温度并且结束于大约220℃到230℃的温度。初始熔化阶段的持续时间可以处于大约240秒和360秒之间。接下来，可以提高焊接炉118的温度，使得焊料预制件100与第一和第二金属相接表面106、114反应，从而形成金属间相。在这一金属间相形成步骤期间，可以提高焊接炉118的温度。例如，金属间相形成步骤开始于220℃到230℃之间的温度并且结束于310℃到330℃之间的温度。金属间相形成步骤的持续时间可以处于120秒和240秒之间。最后，可以在冷却阶段期间逐渐降低焊接炉118的温度，从而使半导体管芯104和衬底102之间的焊接接头冷却并硬化。
参考图3，示出了根据实施例的在焊料预制件100熔化之前位于衬底102和半导体管芯104之间的焊料预制件100的布置结构116的特写侧视图。在这一实施例中，焊料预制件100被配置为使得第一界面表面110和第二界面表面112每者具有变化的表面轮廓124。变化的表面轮廓124是指非平面的表面。焊料预制件100的对接表面的这种非平面性在焊料预制件100与衬底102之间产生了孔洞126，并且在焊料预制件100与半导体管芯104之间产生了孔洞126。因此，包含在焊接炉118的腔室内的环境大气122(或真空)可以扩展到直接位于半导体管芯104和衬底102下面的布置结构116中。
具有变化的表面轮廓124的焊料预制件100通过下述方式增强了无机械压力的扩散焊接工艺。焊料预制件100与衬底102之间和/或焊料预制件100与半导体管芯104之间的孔洞126可以被配置成允许焊接炉118内的环境大气122进出的通道130。这通过促进布置结构116的排气而提高了预焊接步骤的功效。具体而言，在调节步骤期间，通过这些通道130对定位剂108的蒸汽进行排气。此外或替代性地，在活化步骤期间，甲酸能够通过通道130流到布置结构116中，并且接下来反应后的氧化物能够通过通道130从布置结构116排出。
作为比较，具有与半导体管芯104和/或衬底102对接的平面表面的焊料预制件100对预焊接步骤具有高得多的抑制性(prohibitive)。在焊料预制件100的低厚度值(例如，小于30μm、小于15μm等)上尤其是这种情况。这些低厚度值(尽管优选用于形成具有有利的金属间相特征的焊接接头)倾向于使得焊料预制件100顺应半导体管芯104和/或衬底102的表面轮廓。这产生了密封效果，其将阻止定位剂108的去除和/或去氧化剂的引入。作为对照，本文描述的焊料预制件100的变化的表面轮廓124被故意形成为具有足够粗糙的纹理，从而防止焊料预制件100沉降(settle)到将与之对接的金属表面中。
变化的表面轮廓124源自于带纹理的轮廓，该轮廓包括多个脊128和设置在脊128中的紧邻的脊128之间的对应通道130。脊128是指最高点(即，表面的顶点)，并且通道130是指两个紧邻的脊128之间的表面。
根据实施例，具有变化的表面轮廓124的焊料预制件100具有处于5μm和15μm之间的厚度(T)。焊料预制件100的厚度(T)是指第一界面表面110与第二界面表面112之间的沿与这些表面正交的方向的最大分隔距离。这一厚度(T)值将通过无机械压力的扩散焊接产生具有有利的金属间相特征的焊接接头。在所描绘的实施例中，第一界面表面110和第二界面表面112两者具有相同的起伏轮廓，使得焊料预制件100沿焊料预制件100的与脊128和通道130正交的截面具有基本均匀的厚度(T)。这一厚度(T)可以是处于5μm和15μm之间的范围内的单一厚度(T)。然而，未必一定如此。更一般地，第一界面表面110与第二界面表面112的轮廓可以偏离于彼此，并且下文将更详细地描述此类结构的具体示例。在这种情况下，焊料预制件100的厚度(T)可以跨特定截面在5μm和15μm之间的范围内变化。
根据实施例，具有变化的表面轮廓124的焊料预制件100被配置为使得脊128中的两个紧邻的脊128之间的分隔距离(SD)处于焊料预制件100的厚度(T)的两倍和五十倍之间。从数值上来讲，例如，脊128中的两个紧邻的脊128之间的分隔距离(SD)可以处于10μm和750μm之间。这一分隔距离(SD)可以足以按照上文描述的方式产生有效的孔洞126，和/或防止焊料预制件100沉降。
在所描绘的实施例中，变化的表面轮廓124使得多个脊128相互规律地间隔开固定分隔距离(SD)。也就是说，沿焊料预制件100的与脊128正交的截面，顶点出现在恒定波长处。在这种情况下，固定分隔距离(SD)可以是处于焊料预制件100的厚度(T)的二倍和五十倍之间的任何值。然而，这一布置结构116不是必需的。在其他实施例中，脊128中的任何两个紧邻的脊128之间的分隔距离(SD)可以相互偏离落在焊料预制件100的厚度(T)的二倍和五十倍之间的范围内的任何值。
根据实施例，焊料预制件100在第一界面表面110和第二界面表面112之间的最大垂直位移(VD)处于焊料预制件100的厚度(T)的四倍和焊料预制件100的厚度(T)的十倍之间。最大垂直位移(VD)是指位于焊料预制件100的未必横向相互对准的相反侧上的接触表面之间的最大距离。在所描绘的实施例中，最大垂直位移(VD)是第一界面表面110上的顶点与第二界面表面112上的顶点之间的距离。从数值上来讲，例如，最大垂直位移(VD)可以处于20μm和150μm之间。这一最大垂直位移(VD)可以足以按照上文描述的方式产生有效的孔洞126，和/或防止焊料预制件100沉降。
参考图4，示出了根据实施例的焊料预制件100的平面图。该平面图可以位于第一界面表面110或者第二界面表面112中的任一者以上。可以看出，焊料预制件100被图案化，使得脊128跨越第一界面表面110或者第二界面表面112沿横向方向基本相互平行延伸。对应地，脊128之间的通道130跨越第一界面表面110或者第二界面表面112沿横向方向基本相互平行延伸。尽管所描绘的实施例中的脊128和对应通道130沿单个平面延伸，但这不是必需的。例如，脊128和对应通道130可以具有波浪图案。
根据实施例，通道130中的至少一者完全在焊料预制件100的两个边缘侧132之间横向延伸。在这种配置的情况下，通道130中的至少一者为焊接炉118中的环境大气122提供了完整通路，以在焊料预制件100的两个边缘侧132之间流动。因此，可以存在通过布置结构116的不受阻碍的气流，这增强了上文描述的预焊接步骤的功效。如图所示，变化的表面轮廓124具有对角线图案，使得通道130在两个正交边缘侧132之间延伸。更一般地，脊128的图案可以处于任何取向中。
根据实施例，通道130中的至少一者从焊料预制件100的一个边缘侧横向延伸至焊料预制件100的中央区域134。中央区域134与焊料预制件100的每一边缘侧132间隔开。根据实施例，中央区域134与每一边缘侧132之间的距离处于大约1-3mm(毫米)之间。在一个特定实施例中，在每一边缘侧处，中央区域134与焊料预制件100的每一边缘侧132间隔开2mm。从一般的百分比的角度来讲，中央区域134与每一边缘侧132之间的距离可以处于焊料预制件的总宽度的10％到50％的范围内。在焊料预制件100不包括如本文所述的变化的表面轮廓124的情况下，中央区域134是通常与环境大气122隔绝开的区域。因而，通过配置焊料预制件100使得通道130延伸到这一中央区域134中，增强了上文描述的预焊接步骤的功效，因为能够更有效地从中央区域134去除定位剂108，并还因为能够更有效地对第一和第二金属相接表面106、114的与中央区域134直接重叠的部分去氧化。
参考图5A-图5C，示出了具有变化的表面轮廓124的焊料预制件100的各种实施例。图5A示出了焊料预制件100的示例，其中，两个界面表面中只有一个具有变化的表面轮廓124。因而，这种类型的焊料预制件100在焊料预制件100熔化之前，在衬底102和半导体管芯104中的仅一者与焊料预制件100之间产生孔洞126。例如，图5A的焊料预制件100可以被布置在衬底102上，使得背面的平面表面对应于第一界面表面110，并且使得变化的表面轮廓124表面对应于第二界面表面112。在这种情况下，孔洞126形成于半导体管芯104和焊料预制件100之间。替代性地，焊料预制件100可以上下翻转，使得变化的表面轮廓124表面对应于第一界面表面110，并且背面的平面表面对应于第二界面表面112。在这种情况下，孔洞126形成于衬底102和焊料预制件100之间。如果特定金属表面特别易于被氧化而另一个则不太容易被氧化，那么这种焊料预制件100几何结构可以是优选或者可接受的。图5B示出了焊料预制件100的示例，其中，变化的表面轮廓124具有突然的有角度转变，而不是逐渐起伏(即，曲线轮廓)。图5C示出焊料预制件100的另一个具有突然的有角度转变的示例，其中，通道130的底部被加宽以产生大体积。这两种轮廓可以是优选的和/或是可接受的替代方案，这取决于用于形成这些图案的材料和工艺。
更一般地，变化的表面轮廓124可以在如上文所述在预焊接步骤期间提供环境大气122的有利进出的同时，具有不同于本文描述的具体实施例的各种各样的几何结构。例如，可以在变化的表面轮廓124中提供与所示的不同的半径、宽度、角度等。此外或替代地，第一和第二对接表面可以互不相同，并且可以具有本文描述的任何变化的表面轮廓124特征。
具有变化的表面轮廓124的焊料预制件100可以是根据下文的技术形成的。最初，可以提供具有例如处于5μm和30μm之间的厚度的由焊料材料构成的预先形成的平面薄片。接下来，将由焊料材料构成的预先形成的平面薄片布置在两个取放工具之间，并且压到一起，以获得预期的表面轮廓。这两个取放工具中的至少一个具有变化的表面，并且将其压印到该焊料中以形成变化的表面轮廓124。在将向焊料预制件100的两面提供变化的表面轮廓124的情况下(例如，如图3中所示)，抵靠焊料材料的两面挤压这两个取放工具，其中，下部工具是上部工具的负印记(negative imprint)。如果将仅在一侧上提供变化的表面轮廓124(例如，如图5A中所示)，那么这些取放工具中的上部工具可以具有预期印记轮廓，同时下部工具具有平面表面。上部取放工具可以由多孔硬材料(例如，金属)形成，并且可以包括真空孔。下部取放工具可以由硬体块材料(例如，金属)形成，或者由软弹性材料(例如，橡胶或塑料)形成。
采用诸如“第一”、“第二”等术语描述各种元件、区域、区段等，而且这种术语并非意在构成限制。类似的术语在整个说明书中指代类似的元件。
如本文所用，术语“具有”、“含有”、“包括”、“包含”等是开放性术语，其表明所陈述的元件或特征的存在，但不排除额外的元件或特征。如本文所用，冠词“一(a)”，“一(an)”和“该(the)”意在包含复数以及单数，除非上下文清楚地做出了另外的指示。
应当理解，可以使本文描述的各种实施例的特征相互结合，除非做出另外的具体指示。
尽管在本文中已经对具体的实施例给出了图示和描述，但是本领域技术人员将认识到可以针对所图示和描述的具体实施例替换各种各样的备选和/或等价实施方式，而不脱离本发明的范围。本申请意在涵盖本文讨论的具体实施例的任何调整或变化。因此，意在使本发明仅由权利要求及其等价方案限定。

Claims (14)

1.一种焊接半导体器件的方法，所述方法包括：
提供包括第一金属相接表面的衬底；
提供包括第二金属相接表面的半导体管芯；
提供包括第一界面表面和与所述第一界面表面相反的第二界面表面的焊料预制件；
将所述焊料预制件布置在所述衬底和所述半导体管芯之间，使得所述第一界面表面面对所述第一金属相接表面，并且使得所述第二界面表面面对所述第二金属相接表面；以及
执行无机械压力的扩散焊接工艺，所述扩散焊接工艺通过以下方式在所述衬底和所述半导体管芯之间形成焊接接头，所述方式为使所述焊料预制件熔化并且在所述焊接接头中形成金属间相；
其中，所述第一界面表面和所述第二界面表面之一或两者具有变化的表面轮廓，所述变化的表面轮廓在所述焊料预制件熔化之前在所述衬底和所述半导体管芯之一或两者与所述焊料预制件之间产生孔洞。
2.根据权利要求1所述的方法，其中，所述变化的表面轮廓包括多个脊和设置在所述脊中的紧邻的脊之间的通道，并且其中，所述通道在所述衬底和所述半导体管芯之间的所述焊料预制件的布置结构中产生所述孔洞。
3.根据权利要求2所述的方法，其中，所述通道中的至少一者完全在所述焊料预制件的两个边缘侧之间横向延伸。
4.根据权利要求2所述的方法，其中，所述通道中的至少一者从所述焊料预制件的一个边缘侧横向延伸至所述焊料预制件的中央区域，其中，所述中央区域与所述焊料预制件的每一边缘侧间隔开至少1mm。
5.根据权利要求2所述的方法，其中，所述脊和所述通道沿所述焊料预制件的与所述脊正交的截面具有起伏轮廓。
6.根据权利要求5所述的方法，其中，所述第一界面表面和所述第二界面表面两者具有相同的起伏轮廓，并且其中，所述焊料预制件沿所述焊料预制件的与所述脊正交的截面具有基本均匀的厚度。
7.根据权利要求2所述的方法，其中，所述焊料预制件的厚度处于5μm和15μm之间。
8.根据权利要求7所述的方法，其中，所述脊中的两个紧邻的脊之间的分隔距离处于所述焊料预制件的厚度的两倍和五十倍之间。
9.根据权利要求8所述的方法，其中，所述变化的表面轮廓使得多个所述脊规律地相互间隔开固定分隔距离，所述固定分隔距离处于所述焊料预制件的厚度的二倍和五十倍之间。
10.根据权利要求7所述的方法，其中，所述焊料预制件在所述第一界面表面和所述第二界面表面之间的最大垂直位移处于所述焊料预制件的厚度的四倍和所述焊料预制件的厚度的十倍之间。
11.根据权利要求1所述的方法，其中，所述焊料预制件包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。
12.根据权利要求1所述的方法，其中，执行所述无机械压力的扩散焊接工艺包括调节步骤，所述调节步骤从位于所述衬底和所述半导体管芯之间的所述焊料预制件的布置结构中去除定位剂。
13.根据权利要求1所述的方法，其中，执行所述无机械压力的扩散焊接工艺包括活化步骤，所述活化步骤向包含位于所述衬底和所述半导体管芯之间的所述焊料预制件的布置结构的焊接炉中引入甲酸。
14.一种焊接半导体器件的方法，所述方法包括：
提供包括第一金属相接表面的衬底；
提供包括第二金属相接表面的半导体管芯；
提供包括第一界面表面和与所述第一界面表面相反的第二界面表面的焊料预制件；
将所述焊料预制件布置在所述衬底和所述半导体管芯之间，使得所述第一界面表面面对所述第一金属相接表面，并且使得所述第二界面表面面对所述第二金属相接表面；
将位于所述衬底和所述半导体管芯之间的所述焊料预制件的布置结构置于焊接炉中；
在所述焊料预制件的布置结构包含于所述焊接炉中的情况下，在处于所述焊料预制件的回流温度以下的所述焊接炉中执行一种或多种预焊接步骤；
提高所述焊接炉的温度以达到所述焊料预制件的熔化温度，从而使所述焊料预制件熔化并且与所述第一金属相接表面和第二金属相接表面反应，以在无需对所述布置结构施加机械压力的情况下在焊接接头中形成金属间相，
其中，在所述预焊接步骤期间，位于所述衬底和所述半导体管芯之间的所述焊料预制件的布置结构包括位于所述衬底和所述半导体管芯之一或两者与所述焊料预制件之间的通道，并且
其中，所述通道允许所述焊接炉内的环境大气的进出。
CN202211052969.4A 2021-08-31 2022-08-31 具有变化的表面轮廓的扩散焊接预制件 Pending CN115722784A (zh)

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