CN115715452A - 斜坡发生器、图像传感器和产生斜坡电压的方法 - Google Patents

斜坡发生器、图像传感器和产生斜坡电压的方法 Download PDF

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Publication number
CN115715452A
CN115715452A CN202180004853.0A CN202180004853A CN115715452A CN 115715452 A CN115715452 A CN 115715452A CN 202180004853 A CN202180004853 A CN 202180004853A CN 115715452 A CN115715452 A CN 115715452A
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China
Prior art keywords
reference voltage
circuit
signal
output switch
control terminal
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CN202180004853.0A
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范铨奇
林永福
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Huiding Technology Private Ltd
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Dick Innovation Technology Co ltd
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Publication of CN115715452A publication Critical patent/CN115715452A/zh
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

一种斜坡发生器(120)、图像传感电路和产生斜坡电压的方法。所述斜坡发生器(120)包括电流产生电路(222)、多个电路分支(224.1,224.2)、控制电路(326.1,326.2)和电能存储单元。所述电流产生电路(222)用以产生负载电流。所述多个电路分支(224.1,224.2)根据所述负载电流产生斜坡电压。所述多个电路分支(224.1,224.2)的一个电路分支(224.1,224.2)包括彼此串联的电阻与输出开关。所述输出开关选择性地允许所述负载电流的至少一部分流经所述电阻。所述控制电路(326.1,326.2)将参考电压选择性地耦接于所述输出开关的控制端,以在所述控制端产生控制信号。所述电能存储单元存储所述控制信号的电能,并且在所述参考电压未耦接于所述控制端时,根据所存储的电能选择性地导通所述输出开关。所述斜坡发生器(120)能够具有良好的电源电压抑制比。

Description

PCT国内申请,说明书已公开。

Claims (18)

  1. PCT国内申请,权利要求书已公开。
CN202180004853.0A 2021-06-21 2021-06-21 斜坡发生器、图像传感器和产生斜坡电压的方法 Pending CN115715452A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/101215 WO2022266792A1 (zh) 2021-06-21 2021-06-21 斜坡发生器、图像传感器和产生斜坡电压的方法

Publications (1)

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CN115715452A true CN115715452A (zh) 2023-02-24

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CN202180004853.0A Pending CN115715452A (zh) 2021-06-21 2021-06-21 斜坡发生器、图像传感器和产生斜坡电压的方法

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CN (1) CN115715452A (zh)
WO (1) WO2022266792A1 (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8614571B2 (en) * 2011-11-18 2013-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for on-chip sampling of dynamic IR voltage drop
US9312844B2 (en) * 2012-11-15 2016-04-12 Microchip Technology Incorporated Slope compensation module
KR102452492B1 (ko) * 2015-05-06 2022-10-07 삼성전자주식회사 전압 컨버터 및 이를 포함하는 전력 관리 장치
US9735680B2 (en) * 2015-07-23 2017-08-15 Mediatek Inc. Constant on-time pulse width control-based scheme including capabilities of fast transient response and adaptively adjusting on-time pulse width
GB2603662B (en) * 2017-11-10 2022-12-14 Cirrus Logic Int Semiconductor Ltd Class-d amplifier with multiple independent output stages
CN108337460B (zh) * 2018-04-23 2020-12-08 锐芯微电子股份有限公司 图像传感器的读出电路

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WO2022266792A1 (zh) 2022-12-29

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