CN115699273A - Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same - Google Patents
Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same Download PDFInfo
- Publication number
- CN115699273A CN115699273A CN202180037528.4A CN202180037528A CN115699273A CN 115699273 A CN115699273 A CN 115699273A CN 202180037528 A CN202180037528 A CN 202180037528A CN 115699273 A CN115699273 A CN 115699273A
- Authority
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- China
- Prior art keywords
- adhesive sheet
- semiconductor device
- adhesive
- lead frame
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000853 adhesive Substances 0.000 title claims abstract description 158
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 157
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000012790 adhesive layer Substances 0.000 claims abstract description 83
- 238000007789 sealing Methods 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000011347 resin Substances 0.000 claims abstract description 41
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 20
- 229920001577 copolymer Polymers 0.000 claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 17
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 17
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 claims abstract description 13
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 230000000977 initiatory effect Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 31
- 238000010438 heat treatment Methods 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- -1 siloxane compound Chemical class 0.000 description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
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- 239000000047 product Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
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- 229920001721 polyimide Polymers 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 238000007747 plating Methods 0.000 description 4
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- 239000011265 semifinished product Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
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- 239000000155 melt Substances 0.000 description 2
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- 238000010525 oxidative degradation reaction Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
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- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- NRCVBBCKYNCMEV-UHFFFAOYSA-N (2-ethyl-5-methyl-1h-imidazol-4-yl)methanol Chemical compound CCC1=NC(C)=C(CO)N1 NRCVBBCKYNCMEV-UHFFFAOYSA-N 0.000 description 1
- ZXTHWIZHGLNEPG-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1,3-oxazole Chemical compound O1CCN=C1C1=CC=CC=C1 ZXTHWIZHGLNEPG-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- APCTZYNYGGYPMN-UHFFFAOYSA-N 3-[[(3-aminophenoxy)methyl-methyl-trimethylsilyloxysilyl]methoxy]aniline Chemical compound C=1C=CC(N)=CC=1OC[Si](C)(O[Si](C)(C)C)COC1=CC=CC(N)=C1 APCTZYNYGGYPMN-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NAKOELLGRBLZOF-UHFFFAOYSA-N phenoxybenzene;pyrrole-2,5-dione Chemical compound O=C1NC(=O)C=C1.O=C1NC(=O)C=C1.C=1C=CC=CC=1OC1=CC=CC=C1 NAKOELLGRBLZOF-UHFFFAOYSA-N 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J109/00—Adhesives based on homopolymers or copolymers of conjugated diene hydrocarbons
- C09J109/02—Copolymers with acrylonitrile
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
The invention provides an adhesive sheet and a method for manufacturing a semiconductor device using the same, wherein the adhesive sheet is not peeled from the back surface of a lead frame and the back surface of a sealing resin even if subjected to a thermal process accompanying QFN assembly before a peeling process, can be sufficiently and stably adhered, the sealing resin does not leak, and the adhesive sheet can be easily peeled in the peeling process without adhesive residue or breakage of an adhesive. The adhesive sheet for manufacturing a semiconductor device of the present invention comprises a base material; and a thermosetting adhesive layer provided on one surface of the base material, and detachably attached to a lead frame or a wiring board of a semiconductor device. The adhesive layer in the adhesive sheet of the present invention comprises: a carboxyl group-containing acrylonitrile-butadiene copolymer (a); an epoxy resin (b) having the following structural formula (1); a compound (c) containing two or more maleimide groups; and a latent curing agent (d).
Description
Technical Field
The present invention relates to an adhesive sheet suitable for use as a mask tape when a semiconductor device is assembled by a QFN (Quad Flat Non-lead) method, and a method for manufacturing a semiconductor device using the adhesive sheet.
Background
In recent years, IT equipment, such as a mobile phone, has been increasingly downsized, thinned, and made multifunctional, and in order to meet this demand, a need for a further high-density mounting technique in a semiconductor device (semiconductor package) has been increasing.
As a CSP (Chip Size Package) technique that meets this demand, the QFN method has attracted attention (see patent documents 1 and 2), and is widely used in the manufacture of low-pin semiconductor devices having, in particular, 100 pins or less.
Here, as a method of assembling a general QFN package by the QFN system, the following method is roughly known. First, in the bonding step, an adhesive sheet is bonded to one surface of the lead frame, and then, in the die bonding step, semiconductor elements such as IC chips are mounted on each of a plurality of semiconductor element mounting portions (die pad portions) formed in the lead frame. Next, in the wire bonding step, a plurality of leads provided along the outer periphery of each semiconductor element mounting portion of the lead frame and the semiconductor element are electrically connected by bonding wires. Next, in the sealing step, the semiconductor element mounted on the lead frame is sealed with a sealing resin.
Thereafter, in the peeling step, the adhesive sheet is peeled from the lead frame, whereby a QFN unit in which a plurality of QFN packages are arranged can be formed. Finally, in the dicing process, a plurality of QFN packages can be manufactured by dicing the QFN units along the outer periphery of each QFN package.
In the adhesive sheet used for such applications, it is required that the adhesive sheet is sufficiently and stably attached to the back surface of the lead frame and the back surface of the sealing resin without being peeled off from each other before the peeling step, and that the adhesive sheet can be easily peeled off in the peeling step, and that there are no problems such as adhesive residue on the back surface of the lead frame, adhesive residue on the back surface of the sealing resin, and breakage of the adhesive sheet.
In particular, in recent years, lead frames made of copper alloys have been used to reduce the cost of semiconductor devices. When an adhesive sheet is used for such a lead frame made of a copper alloy, there is a problem that copper, which is a transition metal constituting the lead frame, acts as a catalyst for oxidative degradation of a polymer material, as follows: due to the thermal process accompanying the assembly of QFN packages after the taping process, the adhesive, which is a polymer material, is susceptible to oxidative degradation, and when the adhesive sheet is peeled from the lead frame, re-peeling and adhesive residue are likely to occur.
Therefore, the adhesive sheet used in the past cannot sufficiently satisfy the level of practical use that can be applied to a lead frame made of a copper alloy.
For example, a conventional adhesive sheet has a form in which an adhesive layer containing an acrylonitrile-butadiene copolymer and a bismaleimide resin is laminated on a base material made of a heat-resistant film (see patent document 3). When such an adhesive sheet is used, the acrylonitrile-butadiene copolymer in the adhesive layer is easily deteriorated by heat applied in a die bonding curing process, a wire bonding process, and a resin sealing process after the taping process, and there are problems that peeling is difficult in the peeling process, or the adhesive sheet is broken and adhesive remains are generated.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2003-165961
Patent document 2: japanese patent laid-open publication No. 2005-142401
Patent document 3: japanese patent laid-open No. 2008-095014
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an adhesive sheet that can be sufficiently and stably attached without being peeled from the back surface of a lead frame and the back surface of a sealing resin even when subjected to a thermal process accompanying QFN assembly, and that does not leak the sealing resin, and that can be easily peeled off in a peeling process, and that does not cause adhesive residue or breakage in an adhesive agent, prior to the peeling process in an assembly method of a QFN package. Another object of the present invention is to provide a method for manufacturing a semiconductor device using the adhesive sheet.
The adhesive sheet for manufacturing a semiconductor device according to the present invention is an adhesive sheet for manufacturing a semiconductor device, which is detachably attached to a lead frame or a wiring board of a semiconductor device, the adhesive sheet comprising: a substrate; and a thermosetting adhesive layer provided on one surface of the base material, the thermosetting adhesive layer containing: a carboxyl group-containing acrylonitrile-butadiene copolymer (a), an epoxy resin (b) having the following structural formula (1), a compound (c) containing two or more maleimide groups, and a latent curing agent (d).
[ chemical formula 1]
The carboxyl group-containing acrylonitrile-butadiene copolymer (a) is preferably a carboxyl group-containing acrylonitrile-butadiene copolymer having an acrylonitrile content of 5 to 50 mass% and a carboxyl group equivalent weight calculated from a number average molecular weight of 100 to 20000.
The total of the epoxy resin (b), the compound (c) containing two or more maleimide groups, and the latent curing agent (d) is preferably 30 to 300 parts by mass per 100 parts by mass of the carboxyl group-containing acrylonitrile-butadiene copolymer (a).
The latent curing agent (d) is preferably a curing agent having a reaction initiation temperature with the epoxy resin of 100 ℃ or higher.
Further, a method for manufacturing a semiconductor device according to the present invention includes:
a bonding step of bonding the adhesive sheet for manufacturing a semiconductor device of the present invention to a lead frame or a wiring board;
a die mounting step of mounting a semiconductor element on the lead frame or the wiring substrate;
a wire bonding step of connecting the semiconductor element and an external connection terminal;
a sealing step of sealing the semiconductor element with a sealing resin; and
and a peeling step of peeling the adhesive sheet for manufacturing a semiconductor device from the lead frame or the wiring board after the sealing step.
According to the present invention, it is possible to provide an adhesive sheet that can be sufficiently and stably attached without peeling from the back surface of a lead frame and the back surface of a sealing resin even when subjected to a thermal process involving QFN assembly before a peeling step, does not leak the sealing resin, can be easily peeled in the peeling step, and does not cause adhesive residue or breakage. According to the present invention, a method for manufacturing a semiconductor device using the adhesive sheet of the present invention can be also provided.
Drawings
Fig. 1 is a plan view showing an example of a lead frame used in the method for manufacturing a semiconductor device of the present invention.
Fig. 2A is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Fig. 2B is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Fig. 2C is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Fig. 2D is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Fig. 2E is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Fig. 2F is a process diagram illustrating a method for manufacturing a semiconductor device according to the present invention.
Detailed Description
The present invention will be described in detail below.
[ adhesive sheet for semiconductor device production ]
An adhesive sheet for manufacturing a semiconductor device (hereinafter referred to as an adhesive sheet) of the present invention includes a base material and a thermosetting adhesive layer provided on one surface of the base material. The adhesive sheet of the present invention is an adhesive sheet that is detachably adhered to a lead frame or a wiring board of a semiconductor device, the adhesive sheet comprising: a carboxyl group-containing acrylonitrile-butadiene copolymer (a), an epoxy resin (b) having the following structural formula (1), a compound (c) containing two or more maleimide groups, and a latent curing agent (d). The adhesive sheet of the present invention is used as a mask tape when a semiconductor device is assembled by the QFN method.
[ chemical formula 2]
The carboxyl group-containing acrylonitrile-butadiene copolymer (a) (hereinafter, also referred to as component (a)) constituting the adhesive sheet of the present invention functions to appropriately maintain the melt viscosity of the adhesive layer at the initial stage of heating, and imparts excellent flexibility and adhesiveness to the cured adhesive layer. The adhesive sheet of the present invention contains the copolymer, and thus can form an adhesive layer having good adhesion to a base material such as a heat-resistant film and having no cracks. As the carboxyl group-containing acrylonitrile-butadiene copolymer (a), known ones can be used without limitation, but the acrylonitrile content is preferably 5 to 50% by mass, more preferably 10 to 40% by mass. If the acrylonitrile content is less than the above range, the solubility in a solvent and the compatibility with other components are lowered, and therefore the uniformity of the obtained adhesive layer tends to be lowered. On the other hand, if the acrylonitrile content exceeds the above range, the adhesiveness of the obtained adhesive layer to a lead frame or a sealing resin becomes excessive, and when the adhesive layer is used for an adhesive sheet, the adhesive sheet may be difficult to peel off or the adhesive sheet may break in a peeling step.
The carboxyl equivalent weight calculated from the number average molecular weight in the carboxyl group-containing acrylonitrile-butadiene copolymer is preferably in the range of 100 to 20000, more preferably 200 to 10000. If the carboxyl group equivalent is less than the above range, the reactivity with other components becomes too high, and the storage stability of the resulting adhesive layer tends to be lowered. On the other hand, if the carboxyl group equivalent exceeds the above range, the reactivity with other components is insufficient, and therefore the adhesive layer obtained tends to have a low B-stage. As a result, when the adhesive sheet is used as an adhesive sheet, the adhesive layer tends to have a low viscosity at the initial stage of heating, that is, in the step of adhering the adhesive sheet, the die bonding curing treatment, or the like, and the adhesive sheet is heated, so that the adhesive layer is likely to foam or flow out, thereby lowering the thermal stability.
The carboxyl equivalent weight calculated from the number average molecular weight is a value obtained by dividing the number average molecular weight (Mn) by the number of carboxyl groups per molecule (number of functional groups), and is represented by the following formula.
Carboxyl equivalent = Mn/number of functional groups
The epoxy resin (b) (hereinafter, also referred to as component (b)) and the compound (c) containing two or more maleimide groups are responsible for thermosetting of the adhesive layer, and when they are used together, an adhesive layer having excellent thermal stability, being easily peelable in a peeling step, and not causing adhesive residue or breakage can be formed. In particular, since the epoxy resin (b) imparts toughness to the adhesive layer, the adhesive layer containing the epoxy resin (b) can suppress adhesive residue caused by cracking of the adhesive layer in the peeling step.
The compound (c) containing two or more maleimide groups (hereinafter, also referred to as component (c)) imparts thermal stability to the adhesive layer and also functions to adjust the adhesiveness of the adhesive layer, and the compound (c) containing maleimide groups enables the adhesive sheet to have appropriately controlled adhesiveness and enables the adhesive layer, which can be easily peeled off, to be formed on the surface of the base material in the peeling step.
Specific examples of the compound (c) containing two or more maleimide groups include compounds constituting bismaleimide resins, and examples thereof include the following formulas (2-1) to (2-3), among which compounds represented by the following formula (2-1) or (2-3) are particularly useful in terms of solubility in a solvent.
[ chemical formula 3]
By containing the latent curing agent (d) (hereinafter, also referred to as component (d)) in the adhesive layer, the adhesive layer can be adjusted to a lower B-stage state, and hence taping can be performed at a low temperature. In addition, in the step of die-attach curing or the like, the adhesive is heated at a temperature equal to or higher than the reaction initiation temperature of the latent curing agent (d) contained therein, whereby the curing reaction can be rapidly progressed, and a state of high elastic modulus can be obtained.
The latent curing agent (d) is a curing agent having a reaction initiation temperature with the epoxy resin of 100 ℃ or higher. Examples of such latent curing agents include: 2-phenyl-4, 5-dimethyloimidazole (product name: CURZOL 2PHZ-PW, manufactured by Sichuan chemical industries, reaction initiation temperature: 150 ℃ C.), 2-phenyl-4-methyl-5-hydroxymethylimidazole (product name: CURZOL 2P4MHZ-PW, manufactured by Sichuan chemical industries, reaction initiation temperature: 130 ℃ C.), and the like. The reaction initiation temperature here means a temperature at which curing heat generation is observed when the epoxy resin is mixed and the temperature is raised. The determination was carried out using DSC (differential scanning calorimetry).
The content of the latent curing agent (d) is preferably 0.05 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, per 100 parts by mass of the carboxyl group-containing acrylonitrile-butadiene copolymer (a). If the content of the latent curing agent (d) is within the above range, the adhesive layer can be adjusted to a lower B-stage state, so that taping can be performed at a low temperature and the adhesive layer can be rapidly cured in a step such as die attach curing.
In addition, as each of the components (a) to (d), a compound composed of one kind of compound may be used, or a mixture of two or more kinds of compounds may be used.
The ratio of each component is preferably 30 to 300 parts by mass, and more preferably 30 to 200 parts by mass, based on100 parts by mass of the component (a), the total of the component (b), the component (c), and the component (d). If the total of the component (b), the component (c) and the component (d) is less than the above range, the reactivity of the adhesive layer is lowered, and the adhesive layer is difficult to be insolubilized and not melted even by heating, and the thermal stability is lowered, so that the adhesive strength tends to be strong. On the other hand, if it exceeds the above range, the melt viscosity of the adhesive layer at the initial stage of heating is insufficient, and in the adhesive sheet using the adhesive layer, the adhesive layer may flow out or foam during die attach curing or the like after the taping step.
The mass ratio ((c)/(b)) of the component (c) to the component (b) is preferably in the range of 0.1 to 10. If the content is less than the above range, the resulting adhesive layer tends to undergo a curing reaction at room temperature, and therefore, storage stability is poor, and the adhesive strength is too strong, and there is a possibility that an adhesive sheet using the adhesive layer cannot be peeled or broken in a peeling step. On the other hand, if it exceeds the above range, the adhesiveness between the adhesive layer and the base material comprising the heat-resistant film may be reduced in the production of the adhesive sheet, and the adhesive layer tends to foam or the adhesive sheet obtained tends to be easily left with a tacky adhesive.
The adhesive layer in the adhesive sheet for manufacturing a semiconductor device of the present invention may further contain a reactive siloxane compound. The reactive siloxane compound is used to improve the compatibility of the components constituting the adhesive layer and to improve the peelability of the adhesive layer from the sealing resin. By containing the compound in the adhesive layer, a uniform adhesive layer can be formed in which the components in the adhesive layer are well compatible with each other and in which there are no problems such as separation and precipitation of the components. As a result, the adhesive strength of the adhesive layer becomes uniform, and defects such as a decrease in peelability and adhesive residue due to local increase in adhesive strength can be suppressed.
The reactive silicone compound may be one having reactivity imparted thereto through a reactive group such as amino group modification, epoxy modification, carboxyl group modification, or mercapto group modification, without limitation. Among them, 1, 3-bis (3-aminopropyl) tetramethyldisiloxane, aminopropyl-terminated dimethylsiloxane tetramer or octamer, and bis (3-aminophenoxymethyl) tetramethyldisiloxane are preferable in that the reaction with the component (b) and the component (c) proceeds rapidly. The reactive siloxane compound is preferably a compound having reactive groups bonded to both ends of the siloxane structure from the viewpoint of reactivity, but a single-end compound or a silane coupling agent in which one end is reactive and the other end is non-reactive may be used.
In the adhesive layer in the adhesive sheet for manufacturing a semiconductor device of the present invention, the ratio of the number of reactive siloxane compounds to the total of the number of epoxy groups of the component (b) and the number of maleimide groups of the component (c) is preferably 0.05 to 1.2, more preferably 0.1 to 0.8. If the amount is less than the above range, the reactivity of the entire adhesive layer is lowered, and the curing reaction is difficult to proceed in die attach curing treatment or the like, and as a result, the adhesive strength may become excessively strong. On the other hand, if the amount exceeds the above range, the reaction proceeds more, which is likely to cause problems such as gelation during the preparation of the adhesive layer, and the adhesive strength is likely to be weakened.
In addition to the essential components of the components (a) to (d), a reaction accelerator such as an organic peroxide or triphenylphosphine may be added to the adhesive layer within a range that does not affect the adhesiveness of the adhesive layer. By adding these components, the state of the adhesive layer at room temperature can be controlled to a good B-stage.
In addition, a filler having an average particle diameter of 1 μm or less may be added to the adhesive layer for the purpose of controlling melt viscosity, improving thermal conductivity, imparting flame retardancy, and the like. Examples of fillers include: inorganic fillers such as silica, alumina, magnesia, aluminum nitride, boron nitride, titanium oxide, calcium carbonate, and aluminum hydroxide, and organic fillers such as silicone resins and fluororesins. When the filler is used, the content thereof in the adhesive layer is preferably 1 to 40% by mass.
The adhesive sheet of the present invention is an adhesive sheet having the adhesive layer formed on one surface of a heat-resistant film as a base material.
In order to produce such an adhesive sheet, first, an adhesive coating material is prepared which comprises at least the above carboxyl group-containing acrylonitrile-butadiene copolymer (a), the epoxy resin (b) having the structural formula (1), the compound (c) containing two or more maleimide groups, the latent curing agent (d), and a solvent. Next, the coating material may be applied to one surface of the heat-resistant film and dried, and the thickness of the adhesive layer after drying is preferably 1 to 50 μm, more preferably 3 to 20 μm. In addition, in order to protect the adhesive layer, it is preferable to further provide a peelable protective film on the formed adhesive layer, and in this case, the adhesive sheet may be produced by a method in which a coating material is applied on the protective film and dried to form the adhesive layer, and a heat-resistant film is provided thereon. In addition, the protective film is peeled off when the adhesive sheet is used.
Examples of the heat-resistant film include heat-resistant plastic films made of polyimide, polyphenylene sulfide, polyether sulfone, polyether ether ketone, liquid crystal polymer, polyethylene terephthalate, polyethylene naphthalate, and the like, and composite heat-resistant films made of epoxy resin-glass cloth and the like, and particularly a polyimide film is preferable.
The thickness of the polyimide film is preferably 12.5 to 125. Mu.m, more preferably 25 to 50 μm. If the amount is less than the above range, the adhesive sheet tends to have insufficient rigidity and to be difficult to handle, and if the amount exceeds the above range, the operation tends to be difficult in the taping step and the peeling step in the QFN assembly.
As the solvent used in the adhesive coating material, one or more of organic solvents such as hydrocarbons, alcohols, ketones, ethers (tetrahydrofuran, etc.), water, and the like can be preferably used, and the amount used thereof may be appropriately adjusted to an appropriate viscosity as a coating material. The properties of the coating material may be any of a solution, an emulsion, and a suspension, and may be selected appropriately according to the application apparatus used, environmental conditions, and the like.
Examples of the protective film having releasability include plastic films such as polyethylene, polypropylene, vinyl chloride, fluorine-based resins, and silicone, and films having releasability provided by coating polyethylene terephthalate, polyethylene naphthalate, and paper with silicone.
[ method for manufacturing semiconductor device ]
The method for manufacturing a semiconductor device using the adhesive sheet of the present invention includes: a bonding step of bonding an adhesive sheet to the lead frame or the wiring substrate; a chip mounting step of mounting a semiconductor element on a lead frame or a wiring substrate; a wire bonding step of connecting the semiconductor element and the external connection terminal; a sealing step of sealing the semiconductor element with a sealing resin; and a peeling step of peeling the adhesive sheet from the lead frame or the wiring substrate after the sealing step.
An example of a method for manufacturing a semiconductor device using the adhesive sheet of the present invention will be described below with reference to fig. 1 to 2. Fig. 1 isbase:Sub>A plan view ofbase:Sub>A lead frame viewed frombase:Sub>A side on whichbase:Sub>A semiconductor element is mounted, and fig. 2A to 2F are process drawings showingbase:Sub>A method of manufacturingbase:Sub>A QFN package using the lead frame shown in fig. 1, and arebase:Sub>A cross-sectional viewbase:Sub>A-base:Sub>A' of the lead frame of fig. 1.
First, a lead frame 20 having a schematic configuration shown in fig. 1 is prepared. The lead frame 20 is the following: a plurality of semiconductor element mounting portions (die pad portions) 21 on which semiconductor elements such as IC chips are mounted are formed in a matrix shape, and a plurality of leads 22 (external connection terminals) are formed along the outer periphery of each semiconductor element mounting portion 21.
The material of the lead frame 20 may be a conventionally known material, for example, a copper plate, a copper alloy plate, a material having a strike plating layer formed thereon, or a material having a nickel plating layer, a palladium plating layer, and a gold plating layer sequentially formed on the surface of a copper alloy plate.
As shown in fig. 2A, the adhesive sheet 10 is attached to one surface (lower surface) of the lead frame 20 so that an adhesive layer (not shown) is in contact with the lead frame 20 (attaching step). As a method of attaching the adhesive sheet 10 to the lead frame 20, a lamination method, a pressing method, or the like is available, but from the viewpoint of productivity, a lamination method capable of continuously performing a taping process is preferable. The temperature of the adhesive sheet 10 in this step is, for example, normal temperature (5 to 35 ℃) to 150 ℃, and more preferably 60 to 120 ℃. When the lead frame is attached at a temperature higher than 150 ℃, the lead frame is likely to be warped.
If the lead frame 20 is warped in this step, positioning in the die-attach step or wire-bonding step becomes difficult, or transportation to a heating furnace becomes difficult, and there is a possibility that the productivity of the QFN package is lowered.
As shown in fig. 2B, a semiconductor element 30 such as an IC chip is mounted on the semiconductor element mounting portion 21 of the lead frame 20 through a die attach agent (not shown) on the side where the adhesive sheet 10 is not bonded. At this time, since the warpage is suppressed, the lead frame 20 is easily positioned. Then, the semiconductor element 30 is accurately placed at a predetermined position. Thereafter, the semiconductor element 30 is fixed and mounted on the semiconductor element mounting portion 21 by heating to about 100 to 200 ℃ to cure the die bonding agent (die bonding agent curing process). At this time, the adhesive layer is cured, and the adhesive sheet 10 is bonded to the lead frame.
If a outgassing component generated from the adhesive sheet 10, the die attach agent, or the like adheres to the lead frame 20 or the semiconductor element 30, a yield reduction due to a bonding failure of the wire is likely to occur in the wire bonding step. Therefore, after the die bonding step and before the wire bonding step, the lead frame 20 and the semiconductor element 30 are subjected to plasma treatment (plasma cleaning step). As the plasma treatment, for example, a method of irradiating a lead frame 20 (hereinafter, sometimes referred to as a semi-finished product) having the adhesive sheet 10 adhered thereto and the semiconductor element 30 mounted thereon with plasma in an atmosphere of argon gas or a mixed gas of argon gas and hydrogen gas may be mentioned. The plasma irradiation output power in the plasma treatment is, for example, 150 to 600W. The plasma treatment time is, for example, 0.1 to 15 minutes.
As shown in fig. 2C, the semiconductor element 30 and the lead 22 (external connection terminal) of the lead frame 20 are electrically connected by a bonding wire 31 such as a gold wire, a copper wire, or a copper wire coated with palladium (wire bonding step). The working procedure is carried out while heating the semi-finished product to about 150-250 ℃ on a heating block. The heating time in this step is, for example, 5 to 60 minutes.
If the semi-finished product is heated in the wire bonding step, if the fluorine additive is contained in the adhesive layer, the fluorine additive migrates to the surface of the adhesive layer, and the adhesive sheet 10 is easily peeled from the lead frame 20 and the sealing resin 40 in a peeling step described later.
As shown in fig. 2D, the semi-finished product shown in fig. 2C is placed in a mold, and a sealing resin (molding material) is injected into the mold to be filled. After filling the mold with an arbitrary amount, the interior of the mold is maintained at an arbitrary pressure, whereby the semiconductor element 30 is sealed with the sealing resin 40 (sealing step). As the sealing resin, conventionally known resins are used, and examples thereof include a mixture of an epoxy resin and an inorganic filler.
As shown in fig. 2E, the adhesive sheet 10 is peeled off from the sealing resin 40 and the lead frame 20, thereby obtaining a QFN unit 60 in which a plurality of QFN packages 50 are arranged (peeling step).
As shown in fig. 2F, a plurality of QFN packages 50 are obtained by cutting the QFN units 60 along the outer periphery of each QFN package 50 (cutting process).
In the above-described embodiments, the method of manufacturing a QFN package using a lead frame was described as an example, but the present invention is not limited to this, and can be applied to a method of manufacturing a semiconductor device other than a QFN package using a lead frame, and a method of manufacturing a semiconductor device using a wiring substrate.
The adhesive layer in the adhesive sheet of the present invention can obtain a B-stage state (semi-cured state) by crosslinking the carboxyl group of the carboxyl group-containing acrylonitrile-butadiene copolymer (a) and the glycidyl group of the epoxy resin (B), and can obtain a low glass transition temperature (10 ℃ to 50 ℃). The adhesive sheet having an adhesive layer with a low glass transition temperature can be continuously subjected to a taping step by a roll laminator or the like under a heating condition at a relatively low temperature, specifically, at 60 to 150 ℃.
In addition, the adhesive layer having a low glass transition temperature (-30 ℃ C. To 50 ℃ C.) in the adhesive sheet of the present invention has a characteristic of high elastic modulus when heated. In recent years, for the purpose of reducing the cost in the wire bonding step, low-cost copper wires or palladium-coated copper wires have begun to be widely used instead of conventional gold wires for bonding. Since copper wire or palladium-coated copper wire is a metal having higher elasticity than gold, it is necessary to process the copper wire or palladium-coated copper wire under a higher load than a conventional gold wire in order to form a stable shape.
When such a large load is applied to the lead frame, if the adhesive layer in the adhesive sheet adhered to the lower portion of the lead frame has a low elastic modulus, the adhesive layer is deformed and resin sealing is performed in a state of the deformed adhesive layer. This causes leakage of the sealing resin from the deformed adhesive layer portion. Further, when the adhesive sheet is peeled from the lead frame, the following problems occur: the adhesive layer is partially broken from the deformed adhesive layer, and the adhesive remains on the surface of the lead frame. Further, in wire bonding, if the adhesive has a low elastic modulus, the adhesive deforms, so that it is difficult to transmit a lead load, and wire bonding failure is likely to occur. Since the adhesive layer in the adhesive sheet of the present invention has a characteristic of high elastic modulus as described above, even when wire bonding is performed using a copper wire or a palladium-coated copper wire, problems such as wire bonding failure, leakage of sealing resin, and residue of the adhesive layer are less likely to occur.
Further, since the adhesive layer in the adhesive sheet of the present invention contains the compound (c) containing two or more maleimide groups, curing of the adhesive layer can be appropriately controlled in the drying process in the production of the adhesive sheet, and the adhesive layer can be prevented from being brought into a high B-stage state, and therefore, the adhesive strength to the lead frame can be prevented from increasing, and as a result, leakage of the sealing resin, residue of the adhesive to the lead frame, and breakage of the adhesive layer upon peeling can be prevented.
Examples
The present invention will be specifically described below with reference to examples.
Examples 1 to 4 and comparative examples 1 to 3
(composition of adhesive coating)
Adhesive coatings were prepared by mixing components (a) to (d) and other components with Tetrahydrofuran (THF) as a solvent at the mass ratios shown in table 1.
Then, the adhesive coating was applied to one surface of a polyimide film (product name Kapton100EN, manufactured by tokyo corporation) having a thickness of 25 μm to give an adhesive layer having a thickness of 5 μm after drying, and then dried in a hot air circulation type oven set at 80 ℃ to obtain an adhesive sheet.
The details of each component used are as follows.
Carboxyl group-containing acrylonitrile-butadiene copolymer: carboxyl equivalent 1500 calculated from the number average molecular weight, acrylonitrile content 27% by mass
An epoxy resin having the structural formula (1): molecular weight 630, functional group equivalent 210g/eq
Bisphenol a diphenyl ether bismaleimide: molecular weight 570, functional group equivalent 285g/eq
2-phenyl-4, 5-dimethylol imidazole (product name: CUREZOL2PHZ-PW, manufactured by Sichuan chemical industries, ltd., reaction initiation temperature: 150 ℃ C.)
2-phenyl-4-methyl-5-hydroxymethylimidazole (product name: CUREZOL2P4MHZ-PW, manufactured by Siguo chemical industries, ltd., reaction initiation temperature: 130 ℃ C.)
2-Ethyl-4-methyl-5-hydroxymethylimidazole (product name: CUREZOL 2E4MZ, manufactured by Sicountry chemical industries, ltd., reaction initiation temperature: 90 ℃ C.)
2-undecylimidazole (product name: CUREZOL C11Z, manufactured by Siamese chemical industry Co., ltd., reaction initiation temperature: 90 ℃ C.)
[ Table 1]
The following measurement and evaluation were performed on the adhesive sheets of the examples and comparative examples obtained in the above manner, and the results are shown in table 2.
(1) Peel strength to Cu plate
An adherend: copper plate (Guhe made 125 μm64 type)
Size of adhesive sheet: width 10mm x length 50mm
Processing: the member obtained in each example in which the adhesive sheet was attached to an adherend was used as a test piece using a roll laminator. The lamination conditions at this time were a temperature of 80 ℃, a pressure of 4N/cm, and a pressure bonding speed of 0.5 m/min.
And (3) storage: the adhesive sheets processed as described above were stored under the following two conditions, and the peel strength of each of the adhesive sheets after storage was measured and evaluated.
< Condition 1>
The adhesive sheet thus processed was stored in a thermostatic bath set at 60 ℃ for 120 hours.
< Condition 2>
The adhesive sheet thus processed was stored in a thermostatic bath set at 60 ℃ for 120 hours, and then stored in a thermostatic bath set at 40 ℃ for one week.
And (3) determination: the 90 ° peel strength of the test piece was measured at room temperature using a universal tensile testing machine. The copper plate was fixed, and the adhesive sheet was stretched in the vertical direction for measurement. The drawing speed was 50 mm/min.
Evaluation: considering mass productivity in braiding by lamination, an adhesive strength having a peel strength of 15gf/cm or more is practically unproblematic. A is at least 15gf/cm, and X is less than 15 gf/cm.
(2) Modulus of elasticity after heating
Processing: the adhesive coating of each example obtained above was applied to one surface of a polyethylene terephthalate film (PET film) having a thickness of 38 μm and subjected to a release treatment to give an adhesive layer having a thickness of 5 μm after drying, and then dried to obtain an adhesive sheet. Next, assuming a die attach curing process, the adhesive sheet was heated at 175 ℃ for 60 minutes using a vented oven.
And (3) determination: the adhesive layer in the heated adhesive sheet was peeled off from the PET film, and the tensile storage elastic modulus was measured using DMA (dynamic mechanical analyzer). The DMA was measured at a frequency of 11Hz, a temperature rise rate of 10 ℃/min and a load of 1.0gf using a Baiburon measuring instrument (RHEOVIBRONDDV-II-EP, manufactured by Orientec).
Evaluation: a is a tensile storage elastic modulus at 200 ℃ which is the temperature described above in the wire bonding step, and X is a tensile storage elastic modulus at 200 ℃ of less than 6 MPa.
(4) Peel strength to test body after resin sealing process, and adhesive-free residue after tape peeling
Processing/measuring method:
(i) Production and Heat treatment of test bodies
After the adhesive sheet having the adhesive layer on the polyimide film obtained in each example was cut into a width of 50mm × a length of 60mm, the following (a) to (d) were first performed in order, assuming a thermal process or the like involved in the actual assembly of QFN.
(a) The adhesive sheet obtained in each example was cut into a width of 50mm × a length of 60mm, and attached to a lead frame for test (surface-strike plated layer, 8 × 8 matrix arrangement, package size of 5mm × 5mm, 32 pins) made of a copper alloy having an external dimension of 57.5mm × 53.5mm and an external dimension of 50mm × 100mm using a roll laminator. The lamination conditions at this time were a temperature of 80 ℃, a pressure of 4N/cm, and a pressure bonding speed of 0.5 m/min.
(b) The test lead frame made of copper alloy to which the adhesive sheet was attached was heated at 175 ℃ for 60 minutes in a vented oven. This is a process in which a die attach curing process is conceived.
(c) Plasma irradiation treatment: ar gas was used for each gas type, and the treatment was carried out at 450W/60 sec, manufactured by Yield Engineering, 1000P.
(d) Heating at 200 ℃/30 minutes: the wire bonding process was conceived, and heating was performed using a hot plate.
Next, a sealing resin was laminated on the surface of the adherend subjected to the heat treatment of (a) to (d), opposite to the surface to which the adhesive sheet was bonded, using a molding press at 175 ℃/3 minutes (resin sealing step). An epoxy molding resin (EME-G631 BQ) manufactured by Sumitomo electric Wood was used as the sealing resin.
(ii) Measurement of peel Strength and adhesive-free residue after tape peeling
The test piece after the resin sealing step was measured for 90 ° peel strength at room temperature using a universal tensile tester. The test piece was fixed, and the corner portion of the adhesive sheet was stretched in the vertical direction and measured. The drawing speed was 300 mm/min. Further, the presence of adhesive residue after tape peeling was confirmed at a magnification of 100 times using an optical microscope (digital microscope VHX-500, manufactured by keyence corporation).
Evaluation:
a: the peel strength is less than 1000gf/50mm, the peeled adhesive sheet is not broken, and no adhesive remains on the surface of the lead frame material and the surface of the sealing resin.
B: the peel strength is 1000gf/50mm or more, the peeled adhesive sheet is not broken, and no adhesive remains on the surface of the lead frame material and the surface of the sealing resin.
X: the result corresponds to at least one of the confirmation of the breakage of the adhesive sheet and the confirmation of the adhesive residue on the surface of the lead frame material and the surface of the sealing resin.
[ Table 2]
As is clear from table 2 above, the adhesive sheets of examples 1 to 4 had no practical problems in all evaluations of peel strength to a Cu plate, elastic modulus after heating, peel strength to a test body after a resin sealing step, and the presence of adhesive residue after tape peeling.
In contrast, the adhesive sheets of comparative examples 1 and 2 are adhesive tapes having low adhesive strength to Cu plates and easily causing leakage of the sealing resin. The adhesive sheet of comparative example 3 had a problem that the elastic modulus after heating was low, a wire connection failure was likely to occur in wire bonding of a copper wire, and the adhesive sheet was strongly adhered to a lead frame for test made of a copper alloy in the evaluation of peel strength with respect to a test body after a resin sealing step, and the adhesive sheet was cracked.
Industrial applicability
The adhesive sheet for manufacturing a semiconductor device of the present invention can be suitably used in a method of assembling a QFN package by the QFN system. By using this method in the semiconductor device manufacturing method, the adhesive sheet can be easily peeled off in the peeling step in QFN assembly, and adhesive residue of the adhesive on the adhesive sheet and breakage of the adhesive sheet do not occur.
Description of the symbols
10. Adhesive sheet for manufacturing semiconductor device
20. Lead frame
30. Semiconductor device with a plurality of transistors
31. Bonding wire
40. Sealing resin
50 QFN package
Claims (5)
1. An adhesive sheet for manufacturing a semiconductor device, which is detachably attached to a lead frame or a wiring board of a semiconductor device, the adhesive sheet for manufacturing a semiconductor device comprising:
a substrate; and
a thermosetting adhesive layer provided on one surface of the base material, the thermosetting adhesive layer containing: a carboxyl group-containing acrylonitrile-butadiene copolymer (a), an epoxy resin (b) having the following structural formula (1), a compound (c) containing two or more maleimide groups, and a latent curing agent (d),
2. the adhesive sheet for manufacturing a semiconductor device according to claim 1,
the carboxyl group-containing acrylonitrile-butadiene copolymer (a) is a carboxyl group-containing acrylonitrile-butadiene copolymer having an acrylonitrile content of 5 to 50 mass% and a carboxyl group equivalent of 100 to 20000 as calculated from the number average molecular weight.
3. The adhesive sheet for manufacturing a semiconductor device according to claim 1,
the total of the epoxy resin (b), the compound (c) containing two or more maleimide groups, and the latent curing agent (d) is 30 to 300 parts by mass per 100 parts by mass of the carboxyl group-containing acrylonitrile-butadiene copolymer (a).
4. The adhesive sheet for manufacturing a semiconductor device according to claim 1,
the latent curing agent (d) is a curing agent having a reaction initiation temperature with the epoxy resin of 100 ℃ or higher.
5. A method for manufacturing a semiconductor device, comprising:
a bonding step of bonding the adhesive sheet for manufacturing a semiconductor device according to claim 1 to a lead frame or a wiring board;
a die mounting step of mounting a semiconductor element on the lead frame or the wiring substrate;
a wire bonding step of connecting the semiconductor element and an external connection terminal;
a sealing step of sealing the semiconductor element with a sealing resin; and
and a peeling step of peeling the adhesive sheet for manufacturing a semiconductor device from the lead frame or the wiring substrate after the sealing step.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-091221 | 2020-05-26 | ||
| JP2020091221 | 2020-05-26 | ||
| PCT/JP2021/018981 WO2021241359A1 (en) | 2020-05-26 | 2021-05-19 | Adhesive sheet for semiconductor device production and method for producing semiconductor device using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115699273A true CN115699273A (en) | 2023-02-03 |
Family
ID=78744639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180037528.4A Pending CN115699273A (en) | 2020-05-26 | 2021-05-19 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7412555B2 (en) |
| KR (1) | KR20220160680A (en) |
| CN (1) | CN115699273A (en) |
| TW (1) | TW202202587A (en) |
| WO (1) | WO2021241359A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3779601B2 (en) | 2001-11-28 | 2006-05-31 | 株式会社巴川製紙所 | Mask sheet for semiconductor device assembly |
| JP4319892B2 (en) | 2003-11-07 | 2009-08-26 | 株式会社巴川製紙所 | Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device |
| JP2008095014A (en) | 2006-10-13 | 2008-04-24 | Tomoegawa Paper Co Ltd | Thermosetting resin composition for qfn(quad flat non-lead) and adhesive sheet |
| JP2017171814A (en) * | 2016-03-25 | 2017-09-28 | 株式会社巴川製紙所 | Adhesive sheet for printed wiring board |
| JP6909171B2 (en) * | 2018-02-12 | 2021-07-28 | 株式会社巴川製紙所 | Adhesive sheet for manufacturing semiconductor devices and manufacturing method of semiconductor devices using it |
-
2021
- 2021-05-19 WO PCT/JP2021/018981 patent/WO2021241359A1/en active Application Filing
- 2021-05-19 KR KR1020227038095A patent/KR20220160680A/en not_active Application Discontinuation
- 2021-05-19 JP JP2022526934A patent/JP7412555B2/en active Active
- 2021-05-19 CN CN202180037528.4A patent/CN115699273A/en active Pending
- 2021-05-21 TW TW110118522A patent/TW202202587A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202202587A (en) | 2022-01-16 |
| JP7412555B2 (en) | 2024-01-12 |
| KR20220160680A (en) | 2022-12-06 |
| JPWO2021241359A1 (en) | 2021-12-02 |
| WO2021241359A1 (en) | 2021-12-02 |
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