CN115692469B - Audio transistor with high-reliability current sharing design - Google Patents
Audio transistor with high-reliability current sharing design Download PDFInfo
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- CN115692469B CN115692469B CN202211326975.4A CN202211326975A CN115692469B CN 115692469 B CN115692469 B CN 115692469B CN 202211326975 A CN202211326975 A CN 202211326975A CN 115692469 B CN115692469 B CN 115692469B
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Abstract
The invention discloses an audio transistor with high reliability and current sharing design, which belongs to the field of transistors, and comprises a circuit board and a transistor shell, wherein the circuit board is positioned in the transistor shell, the upper surface of the circuit board is provided with a collector region, the upper surface of the collector region is connected with a base region, the surface of the base region is embedded with an emitter region, the base region and the emitter region are positioned on the same horizontal plane, the upper surface of the base region is provided with a plurality of uniformly distributed lead holes, the surface of the base region is provided with a current sharing ring, the upper surface of the base region is provided with a temperature resistant layer, the bottom surface of the transistor shell is fixedly connected with three pins, and the pins are provided with reinforcing components.
Description
Technical Field
The invention relates to the field of transistors, in particular to an audio transistor with high reliability and current sharing design.
Background
The transistor is a solid semiconductor device and has multiple functions of detection, rectification, amplification, switching, voltage stabilization, signal modulation and the like. A transistor as a variable current switch capable of controlling an output current based on an input voltage;
the transistor is widely applied in the modern power electronic field, the transistor is installed in the main current electrical equipment in the market at present, the audio transistor is an indispensable main component in the application of the loudspeaker, the medium-voltage power transistor is a key component for processing audio alternating current signals by the audio power amplifier, the performance of the medium-voltage power transistor is not only required to be high in frequency, high in speed and small in saturation, but also has high requirements on the extreme current impact resistance of the product.
The transistors applied to the market at present can meet the requirements of different devices, but partial devices can be connected with a plurality of transistors in parallel due to factors such as unstable voltage and current or too high temperature generated during operation, when a single transistor is damaged due to factors such as high temperature, the normal use of the devices cannot be affected, the temperature resistance of the transistor is poor, the secondary breakdown tolerance is low, the traditional transistor adopts a mode of single base region layout, although the production cost can be reduced by adopting the layout mode, the transistor cannot be protected, and when the current is slightly larger than the current born by the transistor, the transistor can be directly damaged, and the normal operation of the devices is affected.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems existing in the prior art, the invention aims to provide the audio transistor with high reliability and current sharing design, which can realize the improvement of the burn resistance of the transistor and has higher secondary breakdown tolerance.
2. Technical proposal
In order to solve the problems, the invention adopts the following technical scheme.
The audio transistor comprises a circuit board and a transistor shell, wherein the circuit board is positioned in the transistor shell, a collector region is arranged on the upper surface of the circuit board, a base region is connected to the upper surface of the collector region, an emitter region is embedded on the surface of the base region, the base region and the emitter region are positioned on the same horizontal plane, a plurality of uniformly distributed lead holes are formed in the upper surface of the base region, a uniform flow ring is arranged on the surface of the base region, and a temperature resistant layer is arranged on the upper surface of the base region;
the bottom surface of the transistor shell is fixedly connected with three pins, and reinforcing components are arranged on the pins.
Further, the temperature-resistant layer comprises a passivation layer, the passivation layer is located on the upper surfaces of the base region and the emitter region, metal layers are arranged on the surfaces of the passivation layer, the lead holes penetrate through the passivation layer, and the middle of the metal layers penetrate through the lead holes on the passivation layer and then are in contact with the base region.
Furthermore, the upper surface of the collector region is provided with a light base region, the upper surface of the light base region is provided with a thick base region, and the light base region and the thick base region are mutually matched.
Further, the reinforcement assembly comprises a diamond ring, the diamond ring is fixedly connected to the bottom end of the pin, a positioning plate is arranged on the upper side of the diamond ring, and the positioning plate is fixedly connected with the pin.
Further, the side walls are fixedly connected with a plurality of ejector blocks respectively, and the ejector blocks are arranged in an upward inclined mode.
Further, the uniform flow ring is of a closed annular structure, and the edge of the uniform flow ring is close to the edge of the lead hole.
Furthermore, the inner wall of the transistor shell is smeared with a radiation protection layer which is distributed in a ring shape.
Further, the inner wall of the transistor shell is smeared with a heat insulation layer, and the heat insulation layer is positioned at the inner side of the radiation protection layer.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) According to the scheme, through mutual matching among the base region, the current equalizing ring, the passivation layer, the metal layer and the like, the burn resistance of the transistor can be enhanced by utilizing the metal layer, and even when the circuit board is in a high-temperature working state for a long time, the operation of the transistor is not affected, and meanwhile, the passivation treatment is carried out on the transistor, so that the strength of the transistor is improved, and the transistor has higher secondary breakdown tolerance;
(2) According to the scheme, inversion doping is carried out on a collector region through the design of dual base region layout, so that a light base region with light concentration and junction depth is formed, secondary homotype doping is carried out on the surface of the light base region, a thick base region is formed on the surface of the light base region, the characteristics of two layers of base regions are mutually matched, limit parameters are guaranteed through the light base region, and the current capacity of a product is improved through the thick base region and mutually complemented;
(3) According to the scheme, through mutual matching among the transistor shell, the pins, the reinforcing component and the like, when the transistor is assembled, the reinforcing component on the pins is utilized to be arranged, so that the transistor can be accurately and stably inserted into the appointed position of the circuit board and is in a vertical upward state, the problems that the transistor is inclined or the pins are poor in contact and the like during subsequent welding are avoided, and then the assembly stability of the transistor can be effectively improved.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a schematic side view of the flow homogenizing ring of the present invention;
FIG. 3 is a schematic cross-sectional view of the present invention;
FIG. 4 is a schematic structural diagram of a heat resistant layer according to the present invention;
FIG. 5 is a schematic diagram of a dual layer base layout in accordance with the present invention;
FIG. 6 is a schematic top view of the housing of the present invention;
fig. 7 is an enlarged view of the invention at a in fig. 1.
The reference numerals in the figures illustrate:
1. a circuit board; 2. a collector region; 3. a base region; 4. an emission region; 5. a metal layer; 6. a uniform flow ring; 7. a passivation layer; 8. a light base region; 9. a dense base region; 10. a lead hole; 11. a housing; 12. a radiation protection layer; 13. a thermal insulation layer; 14. pins; 15. a positioning plate; 16. a diamond ring; 17. and (5) a top block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments, and that all other embodiments obtained by persons of ordinary skill in the art without making creative efforts based on the embodiments in the present invention are within the protection scope of the present invention.
Example 1:
referring to fig. 1-7, an audio transistor with high reliability and current sharing design comprises a circuit board 1 and a transistor housing 11, wherein the circuit board 1 is positioned in the transistor housing 11, a collector region 2 is arranged on the upper surface of the circuit board 1, a base region 3 is connected to the upper surface of the collector region 2, an emitter region 4 is embedded on the surface of the base region 3, the base region 3 and the emitter region 4 are in the same horizontal plane, a plurality of uniformly distributed lead holes 10 are formed on the upper surface of the base region 3, a current sharing ring 6 is arranged on the surface of the base region 3, the current sharing ring 6 is of a closed annular structure, the edge of the current sharing ring 6 is close to the edge of the lead holes 10, the current sharing ring 6 adopts the emitter region 4 for homotype doping, and a temperature resistant layer is arranged on the upper surface of the base region 3;
the bottom surface of the transistor shell 11 is fixedly connected with three pins 14, and reinforcing components are arranged on the pins 14.
Referring to fig. 3 and 4, the temperature-resistant layer includes a passivation layer 7, the passivation layer 7 is located on the upper surfaces of the base region 3 and the emitter region 4, the metal layer 5 is disposed on the surface of the passivation layer 7, the lead hole 10 passes through the passivation layer 7, the middle part of the metal layer 5 passes through the lead hole 10 on the passivation layer 7 and contacts with the base region 3, by setting the mutual matching among the base region 3, the current sharing ring 6, the passivation layer 7, the metal layer 5 and the like, the burn-out resistance of the transistor can be enhanced by using the metal layer 5, even if the circuit board 1 is in a high-temperature working state for a long time, the operation of the transistor is not affected, and meanwhile, passivation treatment is performed on the transistor, so that the strength of the transistor is improved, and the transistor has higher secondary breakdown resistance.
Wherein for breakdown due to collector voltage exceeding V (BR) CEO, the transistor will not be damaged as long as the external circuit limits the current after breakdown, and will resume normal operation after collector voltage is reduced to less than V (BR) CEO, so that the breakdown is reversible and not destructive. If the current is not limited after the breakdown, a phenomenon occurs in which the collector voltage rapidly decreases and the collector current rapidly increases, which is generally called a second breakdown. The secondary breakdown is mainly caused by uneven junction surfaces in the tube, lattice defects and the like. The process of secondary breakdown is: the current density at certain weak points of the junction surface is increased, so that the temperature of the local points is increased, the current density at the local points is higher, the temperature is higher … …, the repeated actions are repeated, the crystals at the hot points are finally melted, a low-resistance channel is correspondingly formed between the emitter and the collector, VCE is reduced, the IC is increased rapidly, and the power tube is damaged as soon as the power tube is scalded.
Referring to fig. 3 and 5, a light base region 8 is arranged on the upper surface of a collector region 2, a thick base region 9 is arranged on the upper surface of the light base region 8, the light base region 8 and the thick base region 9 are mutually matched, inverse doping is performed on the collector region 2 through the layout design of a double base region 3 to form a light base region 8 with light concentration and junction depth, secondary homodoping is performed on the surface of the light base region 8, a thick base region 9 is formed on the surface of the light base region 8 and mutually matched, the design integrates the characteristics of two layers of base regions 3, limit parameters are ensured by the light base region 8, the current capacity of a product is improved by the thick base region 9, and the product is mutually complemented.
Referring to fig. 1 and 7, the reinforcement component comprises a diamond ring 16, the diamond ring 16 is fixedly connected to the bottom end of a pin 14, a positioning plate 15 is arranged on the upper side of the diamond ring 16, the positioning plate 15 is fixedly connected with the pin 14, a plurality of top blocks 17 are respectively fixedly connected to the front side wall and the rear side wall of the diamond ring 16, the top blocks 17 are all arranged in an upward inclined manner, when the transistor is assembled, the reinforcement component on the pin 14 is utilized to be arranged, the transistor can be accurately and stably inserted into a designated position of the circuit board 1 and is in a vertical upward state, the problems that the transistor is inclined or the pin 14 is in poor contact and the like during subsequent welding are avoided, and then the assembly stability of the transistor can be effectively improved.
Referring to fig. 6, the inner wall of the transistor housing 11 is coated with the radiation-proof layer 12, the radiation-proof layer 12 is distributed in a ring shape, and the radiation-proof coating is designed in a coating form, so that secondary electromagnetic pollution caused by electromagnetic wave reflection of the existing electromagnetic wave shielding material can be effectively overcome. The electromagnetic wave energy projected to the surface of the electromagnetic wave absorber can be greatly absorbed, the absorption rate of electromagnetic radiation is up to 99.87%, and the electromagnetic energy is converted into heat energy through the energy conversion principle, so that the secondary pollution of the electromagnetic wave is thoroughly eliminated, and the total amount of electromagnetic wave radiation in a space is effectively reduced;
the anti-radiation paint is a water-soluble environment-friendly paint, adopts special wave-absorbing materials and adopts particle physical technology, and has no toxic or side effect on human bodies and environment.
Referring to fig. 6, the inner wall of the transistor housing 11 is coated with a heat insulating layer 13, the heat insulating layer 13 is located at the inner side of the radiation-proof layer 12, the heat insulating layer 13 adopts a coating blocking type mode, the blocking type heat insulating coating is a coating for realizing heat insulation through high thermal resistance of the coating, after full drying and solidification, the heat conductivity is very small after the material is dried and formed into a film, and the most widely used coating is as follows: composite magnesium aluminum silicate heat insulation paint, rare earth heat insulation paint and the like.
When in use: when the transistor is required to be assembled, the diamond ring 16 on the pin 14 can be accurately and stably inserted into an external PCB, the pin 14 can be prevented from being excessively inserted through the positioning plate 15, and the tension of the top block 17 to two sides is utilized to enable the pin to be abutted against the hole wall of the external PCB, so that the effect of positioning and mounting can be achieved, and the transistor can be kept in a stable and upward state, and the subsequent welding treatment is facilitated;
the high temperature resistance of the transistor can be effectively enhanced by arranging the temperature resistant layer, the circuit board 1 can be ensured to run in a high temperature environment for a long time, the transistor can not be damaged, the secondary breakdown tolerance can be further improved by matching with the passivation layer 7, the inverted doping is carried out on the collector region 2 through the design of the layout of the dual base regions 3, a light base region 8 with light concentration and deep junction is formed, the secondary homotype doping is carried out on the surface of the light base region 8, a thick base region 9 is formed on the surface of the light base region 8, the characteristics of the two layers of base regions 3 are combined in the design, limit parameters are ensured by the light base region 8, the current capacity of a product is improved by the thick base region 9, and the product is mutually supplemented.
The above description is only of the preferred embodiments of the present invention; the scope of the invention is not limited in this respect. Any person skilled in the art, within the technical scope of the present disclosure, may apply to the present invention, and the technical solution and the improvement thereof are all covered by the protection scope of the present invention.
Claims (6)
1. The utility model provides an audio transistor of high reliability design that flow equalizes, includes circuit board (1) and transistor housing (11), its characterized in that: the circuit board (1) is positioned in the transistor shell (11), a collector region (2) is arranged on the upper surface of the circuit board (1), a base region (3) is connected to the upper surface of the collector region (2), an emitter region (4) is embedded on the surface of the base region (3), the base region (3) and the emitter region (4) are positioned on the same horizontal plane, a plurality of uniformly distributed lead holes (10) are formed in the upper surface of the base region (3), a uniform flow ring (6) is arranged on the surface of the base region (3), and a temperature resistant layer is arranged on the upper surface of the base region (3);
three pins (14) are fixedly connected to the bottom surface of the transistor shell (11), and reinforcing components are arranged on the pins (14);
the reinforcing component comprises a diamond ring (16), the diamond ring (16) is fixedly connected to the bottom end of the pin (14), a positioning plate (15) is arranged on the upper side of the diamond ring (16), and the positioning plate (15) is fixedly connected with the pin (14);
the front side wall and the rear side wall of the diamond ring (16) are respectively fixedly connected with a plurality of top blocks (17), and the top blocks (17) are all arranged in an upward inclined mode.
2. The high reliability current sharing design audio transistor of claim 1, wherein: the temperature-resistant layer comprises a passivation layer (7), the passivation layer (7) is located on the upper surfaces of the base region (3) and the emitter region (4), the metal layers (5) are arranged on the surfaces of the passivation layer (7), the lead holes (10) penetrate through the passivation layer (7), and the middle part of the metal layers (5) penetrates through the lead holes (10) on the passivation layer (7) and then is in contact with the base region (3).
3. The high reliability current sharing design audio transistor of claim 1, wherein: the upper surface of the collector region (2) is provided with a light base region (8), the upper surface of the light base region (8) is provided with a thick base region (9), and the light base region (8) and the thick base region (9) are mutually matched.
4. The high reliability current sharing design audio transistor of claim 1, wherein: the current homogenizing ring (6) is of a closed annular structure, and the edge of the current homogenizing ring (6) is close to the edge of the lead hole (10).
5. The high reliability current sharing design audio transistor of claim 1, wherein: the inner wall of the transistor shell (11) is coated with a radiation protection layer (12), and the radiation protection layer (12) is distributed in a ring shape.
6. The high reliability current sharing design audio transistor of claim 5, wherein: the inner wall of the transistor shell (11) is coated with a heat insulation layer (13), and the heat insulation layer (13) is positioned on the inner side of the radiation protection layer (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211326975.4A CN115692469B (en) | 2022-10-26 | 2022-10-26 | Audio transistor with high-reliability current sharing design |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211326975.4A CN115692469B (en) | 2022-10-26 | 2022-10-26 | Audio transistor with high-reliability current sharing design |
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| Publication Number | Publication Date |
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| CN115692469A CN115692469A (en) | 2023-02-03 |
| CN115692469B true CN115692469B (en) | 2024-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211326975.4A Active CN115692469B (en) | 2022-10-26 | 2022-10-26 | Audio transistor with high-reliability current sharing design |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2548262Y (en) * | 2002-05-31 | 2003-04-30 | 无锡华晶微电子股份有限公司 | Current-equalizing loop transistor |
| CN109411348A (en) * | 2018-11-21 | 2019-03-01 | 山东农业工程学院 | A kind of method and chip of high-power radiation-hard transistor chip design |
| CN113035807A (en) * | 2021-03-08 | 2021-06-25 | 广东神思半导体有限公司 | Triode with stable heat radiation structure |
| CN217306492U (en) * | 2022-04-15 | 2022-08-26 | 北京神万月科技有限公司 | Novel discrete semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2159837B1 (en) * | 2007-05-29 | 2018-01-17 | Kyocera Corporation | Electronic component storing package and electronic device |
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2022
- 2022-10-26 CN CN202211326975.4A patent/CN115692469B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2548262Y (en) * | 2002-05-31 | 2003-04-30 | 无锡华晶微电子股份有限公司 | Current-equalizing loop transistor |
| CN109411348A (en) * | 2018-11-21 | 2019-03-01 | 山东农业工程学院 | A kind of method and chip of high-power radiation-hard transistor chip design |
| CN113035807A (en) * | 2021-03-08 | 2021-06-25 | 广东神思半导体有限公司 | Triode with stable heat radiation structure |
| CN217306492U (en) * | 2022-04-15 | 2022-08-26 | 北京神万月科技有限公司 | Novel discrete semiconductor device |
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| CN115692469A (en) | 2023-02-03 |
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