CN115692457A - Display screen, preparation method thereof and display device - Google Patents
Display screen, preparation method thereof and display device Download PDFInfo
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- CN115692457A CN115692457A CN202210785135.8A CN202210785135A CN115692457A CN 115692457 A CN115692457 A CN 115692457A CN 202210785135 A CN202210785135 A CN 202210785135A CN 115692457 A CN115692457 A CN 115692457A
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- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 239000012945 sealing adhesive Substances 0.000 claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 239000002096 quantum dot Substances 0.000 claims description 32
- 239000003292 glue Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000011159 matrix material Substances 0.000 claims description 16
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- 230000003287 optical effect Effects 0.000 claims description 12
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- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 239000000565 sealant Substances 0.000 abstract description 14
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
The invention discloses a display screen, a preparation method thereof and a display device.A plurality of light emitting diode chips are formed on one side of a substrate; forming a sealing adhesive layer on one side of the substrate, which is provided with the light-emitting diode chips, wherein the light-emitting diode chips are embedded in the sealing adhesive layer, and the sealing adhesive layer is provided with a first surface deviating from the substrate; forming at least one pixel driving circuit on the first surface, wherein the pixel driving circuit is electrically connected with at least one light emitting diode chip; arranging a first packaging plate on one side of the pixel driving circuit, which is far away from the sealant layer; removing the substrate; the color conversion structure is arranged on one side of the sealing adhesive layer, which is far away from the pixel driving circuit, and is used for converting the color of light emitted by the light emitting diode chip; and arranging a second packaging plate on one side of the color conversion structure, which is far away from the light-emitting diode chip, and preparing to obtain the display screen. The preparation method of the display screen can reduce the transfer times of the light-emitting diode chip in the preparation process of the display screen and improve the pixel density of the display screen.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display screen, a preparation method of the display screen and a display device.
Background
With the development of technology, people have higher and higher requirements on pixels of display devices. At present, in the process of preparing a micro LED display screen, the micro LEDs are generally required to be transferred for multiple times, the more the transfer times are, the more the yield of the micro LEDs is easily reduced, and when a large amount of micro LEDs with different colors are transferred to a receiving substrate after being arrayed, certain gaps need to be reserved among the micro LEDs, so that the characteristic that the display screen has high pixel density is difficult to realize.
Disclosure of Invention
The embodiment of the invention discloses a display screen, a preparation method thereof and a display device, which can reduce the transfer times of a light-emitting diode chip and improve the pixel density of the display screen.
In order to achieve the above object, in a first aspect, the present invention discloses a method for manufacturing a display screen, including:
forming a plurality of light emitting diode chips arranged at intervals on one side of a substrate;
forming a sealing adhesive layer on one side of the substrate, which is provided with the light-emitting diode chips, wherein the light-emitting diode chips are embedded in the sealing adhesive layer, and the sealing adhesive layer is provided with a first surface deviating from the substrate;
forming at least one pixel driving circuit on the first surface, wherein the pixel driving circuit is electrically connected with at least one light-emitting diode chip and is used for controlling the light-emitting diode chip to emit light;
arranging a first packaging plate on one side of the pixel driving circuit, which is far away from the sealing adhesive layer;
removing the substrate;
arranging a color conversion structure on one side of the sealing adhesive layer, which is far away from the pixel driving circuit, for converting the color of light emitted by the light-emitting diode chip;
and arranging a second packaging plate at one side of the color conversion structure, which is far away from the light-emitting diode chip.
As an alternative implementation manner, in an embodiment of the first aspect of the present application, the forming a sealant layer on the side of the substrate where the light emitting diode chip is disposed includes:
arranging a first laser glue on one side of the first transfer board;
and arranging the first laser glue on one side of the substrate with the light-emitting diode chip in a hot-pressing mode to form the sealing glue layer.
As an optional implementation manner, in an embodiment of the first aspect of the present application, the forming at least one pixel driving circuit on the first surface, the pixel driving circuit being electrically connected to at least one of the light emitting diode chips for controlling the light emitting diode chip to emit light includes:
a plurality of through holes are formed in the first surface and correspond to the electrodes of the light-emitting diode chips;
forming a connecting circuit used for being electrically connected with the electrode of the light-emitting diode chip in the through hole;
and at least one pixel driving circuit is formed on the first surface, and the pixel driving circuit is electrically connected with the corresponding light-emitting diode chip through the circuit.
As an alternative implementation manner, in an embodiment of the first aspect of the present application, the forming of the electrical circuit in the through hole for electrically connecting to the electrode of the light emitting diode chip includes:
and enabling metal plating to be attached in the through hole in an evaporation or sputtering mode to form a wiring circuit electrically connected with the electrode of the light emitting diode chip.
As an optional implementation manner, in an embodiment of the first aspect of the present application, the opening a plurality of through holes on the first surface includes:
and forming a plurality of through holes on one side of the sealing adhesive layer, which is far away from the substrate, by using a plasma etching process.
As an optional implementation manner, in an embodiment of the first aspect of the present application, the color conversion structure includes a black matrix, a plurality of quantum dots, and a plurality of optical filters, where the black matrix is provided with a plurality of openings spaced apart from each other, at least a portion of the openings are provided with the quantum dots, the plurality of optical filters are correspondingly disposed in the plurality of openings, and the quantum dots are located between the optical filters and the light emitting diode chip.
In a second aspect, the present invention discloses a display screen, comprising:
a glue sealing layer;
the plurality of light emitting diode chips are embedded in the adhesive layer;
the pixel driving circuit is formed on one side of the adhesive layer and electrically connected with the at least one light-emitting diode chip, and the pixel driving circuit is used for driving the corresponding light-emitting diode chip to emit light;
the first packaging plate is arranged on one side, away from the sealant layer, of the pixel driving circuit;
the color conversion structure is arranged on one side, away from the pixel driving circuit, of the sealing adhesive layer and is used for converting the color of light rays of the light-emitting diode chip; and
and the second packaging plate is arranged on one side of the color conversion structure, which is deviated from the light-emitting diode chip.
As an optional implementation manner, in an embodiment of the second aspect of the present application, the display screen further includes a plurality of electrical connection lines, a side of the sealing adhesive layer facing the pixel driving circuit is provided with a plurality of through holes, the plurality of through holes correspond to the electrodes of the plurality of light emitting diode chips in a one-to-one manner, the plurality of through holes communicate the electrodes of the plurality of light emitting diode chips and the pixel driving circuit, and the electrical connection lines penetrate through the through holes and are electrically connected to the corresponding electrodes of the light emitting diode chips and the pixel driving circuit.
As an optional implementation manner, in an embodiment of the second aspect of the present application, the color conversion structure includes a black matrix, a plurality of quantum dots, and a plurality of optical filters, where the black matrix is provided with a plurality of openings spaced apart from each other, at least a portion of the openings are provided with the quantum dots, the plurality of optical filters are correspondingly disposed in the plurality of openings, and the quantum dots are located between the optical filters and the light emitting diode chip.
In a third aspect, the invention discloses a display device, which comprises a display screen prepared by the preparation method of the first aspect; alternatively, the first and second electrodes may be,
the display device comprises a display screen as described in the second aspect above.
Compared with the prior art, the invention has the beneficial effects that:
according to the display screen, the preparation method thereof and the display device provided by the embodiment of the invention, the pixel driving circuit is directly formed on the first surface of the adhesive layer after the plurality of light emitting diode chips and the adhesive layer are formed on the substrate, and the light emitting diode chips do not need to be transferred to the driving back plate and then bonded, so that the transfer frequency of the light emitting diode chips in the preparation process can be reduced, and the yield of the display screen is improved. And after the substrate is removed, the colorization of the display screen is realized by arranging the color conversion structure on the side of the light-emitting diode chip, which is far away from the pixel driving circuit, so that the light-emitting diode chips do not need to be transferred after being arrayed. Because the density of the plurality of light emitting diode chips is higher when the plurality of light emitting diode chips are formed on the substrate, the plurality of light emitting diode chips do not need to be arranged and then transferred, and the relative positions of the plurality of light emitting diode chips are not changed, the pixel density of the display screen is favorably ensured, and the display screen has the characteristic of high pixel density.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure;
FIG. 2 is a flowchart of step S13 in the first embodiment of the present application;
FIG. 3 is a schematic structural diagram illustrating steps of a method for manufacturing a display panel according to an embodiment of the present disclosure;
FIG. 4 is a flow chart of another method for manufacturing a display panel disclosed in the second embodiment of the present application;
FIG. 5 is a flowchart of step S24 in the second embodiment of the present application;
FIG. 6 is a schematic structural diagram of steps of another display panel manufacturing method disclosed in the second embodiment of the present application;
fig. 7 is a schematic structural diagram of a display screen disclosed in the third embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of the display screen of FIG. 8 taken along the direction I-I;
fig. 9 is a schematic structural diagram of a display screen disclosed in the fourth embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the present invention, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "center", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the invention and its embodiments and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used in other meanings besides orientation or positional relationship, for example, the term "upper" may also be used in some cases to indicate a certain attaching or connecting relationship. The specific meanings of these terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meanings of the above terms in the present invention can be understood by those of ordinary skill in the art according to specific situations.
Moreover, the terms "first," "second," and the like, are used primarily to distinguish one device, element, or component from another (the specific type and configuration may or may not be the same), and are not used to indicate or imply the relative importance or number of the indicated devices, elements, or components. "plurality" means two or more unless otherwise specified.
The technical solution of the present invention will be further described with reference to the following examples and drawings.
Example one
Referring to fig. 1 to 3, an embodiment of the present application discloses a method for manufacturing a display screen, where the method for manufacturing the display screen includes the following steps:
s11: a plurality of light emitting diode chips are formed on one side of the substrate at intervals.
As shown in fig. 3 (a), a plurality of light emitting diode chips 101 are formed on one side of a substrate 110, and the substrate 110 is located on the light emitting side of the light emitting diode chips 101. The light emitting diode chip 101 may be a micro led light emitting chip with a size smaller than 100 μm or a MiniLED light emitting chip with a size greater than or equal to 100 μm. Illustratively, the plurality of light emitting diode chips 101 may be disposed in an array on one side of the substrate 110.
S12: and a sealing adhesive layer is formed on one side of the substrate, which is provided with the light-emitting diode chips, the light-emitting diode chips are embedded in the sealing adhesive layer, and the sealing adhesive layer is provided with a first surface deviating from the substrate.
As shown in fig. 3 (b), for an exemplary case, step S12 may specifically include: a first laser glue, such as a Polyimide (PI) material, is disposed on one side of the first interposer, and then the first laser glue is disposed on one side of the substrate 110 having the led chip 101 by thermal compression to form a glue sealing layer 102, and finally the first interposer is removed by laser. It is understood that the distance from the side of the encapsulation layer 102 facing away from the substrate 110 to the substrate 110 is equal to or greater than the distance from the side of the light emitting diode chip 101 facing away from the substrate 110 to the substrate 110. Through the hot-pressing process, the first laser glue can be arranged on one side of the substrate 110 to form the glue sealing layer 102, the surface of the glue sealing layer 102, which is attached to the first transfer plate, can be relatively flat, the first transfer plate can be removed, the pixel driving circuit 104 is formed on the surface, and the phenomenon that the pixel driving circuit 104 is broken due to the uneven surface is avoided.
Alternatively, the sealant layer 102 may be formed by coating an insulating material on one side of the substrate 110.
S13: and at least one pixel driving circuit is formed on the first surface, and is electrically connected with at least one light-emitting diode chip and used for controlling the light emission of the corresponding light-emitting diode chip.
As shown in fig. 3 (c), the pixel driving circuit 104 is formed on the first surface 1021 of the encapsulant layer 102, and the pixel driving circuit 104 is connected to the electrode of the led chip 101, so as to electrically connect the pixel driving circuit 104 and the led chip 101.
As shown in fig. 2, forming at least one pixel driving circuit 104 on the first surface 1021 may specifically include the following steps:
s131: a plurality of through holes are formed in the first surface 1021, and the plurality of through holes correspond to the electrodes of the plurality of light emitting diode chips 101. Illustratively, a through hole may be formed on a side of the encapsulation layer 102 away from the substrate 110 by plasma etching.
S132: electrical wiring 103 for electrical connection with the electrodes of the light emitting diode chip 101 is formed in the through-holes. The material of the electrical circuit 103 may be metal, such as silver and copper.
For example, a metal mask plate may be disposed on the surface of the sealing adhesive layer 102, the metal mask plate has a plurality of openings, each opening corresponds to a different through hole, and then the power connection line 103 is formed in the through hole in a sputtering manner, that is, the inert gas impacts the target, so that after atoms on the surface of the target are impacted out, a portion of the atoms are deposited in the through hole to form the power connection line 103, and the other portion of the atoms are shielded by the metal mask plate, thereby preventing the atoms from being deposited on the sealing adhesive layer 102. Alternatively, after the metal mask is disposed on the surface of the sealant layer 102, the electrical connection line 103 may be formed in the through hole by evaporation, that is, the material of the electrical connection line 103 is heated and evaporated, and then deposited in the through hole to form the electrical connection line 103.
Alternatively, a layer of photosensitive material may be formed on the surface of the sealant layer 102, and then the photosensitive material is removed by exposure etching at a position corresponding to the through hole of the sealant layer 102, and then the wiring line 103 is formed in the through hole by sputtering or evaporation, and then a part of atoms deposited on the photosensitive material is stripped off from the sealant layer 102 along with the photosensitive material.
S133: at least one pixel driving circuit 104 is formed on the first surface 1021, and the pixel driving circuit 104 is electrically connected to the corresponding light emitting diode chip 101 through a wiring 103. The pixel driving circuit 104 can be a 7T1C frame pixel driving circuit 104, that is, any one of the led chips 101 controls its light emission or light extinction through 7 tfts and a capacitor, or a 2T1C frame pixel driving circuit 104 can be used. It should be noted that the thin film transistor can be formed on the sealing layer 102 by using the sealing layer 102 as a substrate through an exposure etching process. The thin film transistors can avoid the position of the connecting circuit 103, and the drain of one thin film transistor can be electrically connected with the connecting circuit 103 through a switching circuit, so that the thin film transistor is electrically connected with the light emitting diode chip 101.
Therefore, through the steps S131 to S133, the pixel driving circuit 104 can be directly formed on the first surface 1021 of the encapsulation layer 102, and the pixel driving circuit 104 does not need to be bonded to the electrode of the light emitting diode chip 101, so that the light emitting diode chip 101 can be prevented from being damaged by pressure, and the yield of the display screen can be improved.
S14: and arranging the first packaging plate on one side of the pixel driving circuit, which is far away from the sealant layer.
As shown in fig. 3 (d), the first packaging plate 106 is disposed on a side of the pixel driving circuit 104 away from the sealant layer 102. Specifically, step S14 may include: the first package board 106 is attached to a side of the pixel driving circuit 104 facing away from the light emitting diode chip 101 by an insulating adhesive. One side of the insulating glue layer is adhered to the sealing glue layer 102 and the pixel driving circuit 104, and the other side is adhered to the first packaging plate 106.
S15: the substrate is removed. Illustratively, the substrate 110 can be peeled off from the led chip 101 and the encapsulant layer 102 by laser. As shown in fig. 3 (e), the substrate 110 on the light-emitting side of the light-emitting diode chip 101 is removed.
S16: and the color conversion structure is arranged on one side of the sealing adhesive layer, which is far away from the pixel driving circuit, and is used for converting the color of light emitted by the light-emitting diode chip. As shown in fig. 3 (f), the color conversion structure is provided at the original position of the substrate.
Further, the color conversion structure 107 may include a black matrix 1071, a plurality of quantum dots 1072, and a plurality of filters 1073, wherein the black matrix 1071 has a plurality of openings spaced from each other, at least a portion of the openings have the quantum dots 1072 therein, the plurality of filters 1073 are correspondingly disposed in the plurality of openings, and the quantum dots 1072 are disposed between the filters 1073 and the led chip 101.
For example, the led chip 101 may be a blue led chip 101, and the color conversion structure 107 may include a black matrix, a plurality of red quantum dots, a plurality of green quantum dots, a plurality of red filters, a plurality of green filters, and a plurality of blue filters, where a red quantum dot or a green quantum dot is disposed in a part of the openings, light emitted by the blue led chip 101 can be converted into red light after being irradiated to the red quantum dots, light emitted by the blue led chip 101 can be converted into green light after being irradiated to the green quantum dots, and the other part of the openings without any color quantum dots does not convert the color of the light and retains the blue light, thereby implementing color display of the display screen. The red quantum dots are located between the red filter and the blue led chip 101, and only allow the red light to penetrate into the external environment, and the green quantum dots are located between the green filter and the blue led chip 101, and only allow the green light to penetrate into the external environment. The blue filter is positioned in the other part of the opening without any color quantum dots, and only allows blue light to penetrate into the external environment. It can be understood that the black matrix is arranged between the quantum dots in an alternating mode, and the green light sheets are arranged between the green light sheets in an alternating mode, so that the mutual interference of light rays of adjacent openings is avoided, and the display effect is guaranteed.
Of course, in other embodiments, the color conversion structure 107 may also include only a plurality of quantum dots, and the quantum dots are disposed corresponding to the light emitting diode chip 101.
S17: the second package plate 108 is arranged at a side of the color conversion structure facing away from the led chip. As shown in fig. 3 (g), the second encapsulating sheet 108 is disposed in a stacked arrangement with the color conversion structure 107. Since the second package plate 108 is located on the light emitting side of the led chip 101, a transparent glass plate may be used as the second package plate 108.
In summary, in the embodiment, the pixel driving circuit 104 is directly formed on the first surface of the sealing layer, and the light emitting diode chip 101 does not need to be transferred to the driving backplane and then bonded, so that the number of times of transferring the light emitting diode chip 101 can be reduced, and the yield of the display screen can be improved. And after the substrate 110 is removed, the color conversion structure 107 is arranged on the side of the light emitting diode chip 101 away from the pixel driving circuit 104 to realize colorization of the display screen, so that the light emitting diode chips 101 do not need to be arranged in a sheet and then transferred. Because the density of the plurality of light emitting diode chips 101 formed on the substrate 110 is high, the plurality of light emitting diode chips 101 do not need to be arranged and then transferred, and the relative positions of the plurality of light emitting diode chips 101 are not changed, the transfer times of the light emitting diode chips 101 can be reduced, the yield of the display screen is improved, the pixel density of the display screen is ensured, and the display screen has the characteristic of high pixel density.
Example two
Referring to fig. 4 to 6, a second embodiment of the present application discloses another method for manufacturing a display screen, where the method for manufacturing the display screen includes the following steps:
s21: a plurality of light emitting diode chips 101 are formed at intervals on one side of the substrate 110. As shown in fig. 6 (a).
S22: and forming a sealing adhesive layer on one side of the substrate, which is provided with the light-emitting diode chips, wherein the light-emitting diode chips are embedded in the sealing adhesive layer, and the sealing adhesive layer is provided with a first surface deviating from the substrate.
Specifically, step S22 may be implemented by: a first laser adhesive is disposed on one side of the first interposer 120, and is disposed on one side of the substrate 110 having the led chips 101 by thermocompression bonding, so as to form an adhesive layer 102, wherein the adhesive layer 102 covers the led chips 101, as shown in fig. 6 (b).
S23: the substrate is removed. As shown in fig. 6 (c), the substrate 110 is peeled off from the sealant layer 102 and the light emitting diode chip 101.
S24: and at least one pixel driving circuit is formed on the first surface and electrically connected with at least one light-emitting diode chip for controlling the light emission of the corresponding light-emitting diode chip.
As shown in fig. 5 and fig. 6 (d), step S24 may specifically include:
s241: after removing the substrate 110, a second interposer 130 is disposed on a side of the led chip 101 facing away from the first interposer 120. That is, the substrate 110 is replaced with the second interposer 130. Specifically, the second interposer 130 may be bonded to the encapsulant layer 102 and the led chip 101 by a second laser adhesive.
S242: the first transfer plate 120 is removed. Illustratively, the first transfer plate 120 may be peeled off from the adhesive layer 102 by laser.
S243: a plurality of through holes are formed in the first surface 1021, and the through holes correspond to the electrodes of the plurality of light emitting diode chips 101.
S244: a connection circuit 103 for electrically connecting with the electrode of the light emitting diode chip 101 is formed in the through hole.
S245: at least one pixel driving circuit 104 is formed on the first surface 1021, and the pixel driving circuit 104 is electrically connected to the corresponding light emitting diode chip 101 through a wiring 103 to electrically connect a plurality of the light emitting diode chips 101.
Therefore, through steps S241 to S245, the pixel driving circuit 104 can be directly formed on the first surface 1021 of the encapsulant layer 102, and the pixel driving circuit 104 does not need to be bonded to the electrode of the led chip 101, so that the led chip 101 can be prevented from being damaged by pressure, and the yield of the display screen can be improved. Moreover, the sealant layer 102 can form a relatively flat surface, which is beneficial to forming the pixel driving circuit 104.
It should be noted that, in other embodiments, the thickness of the encapsulant layer 102 along the Z direction may be reduced to make the encapsulant layer 102 and the electrodes of the led chip 101 coplanar, and then the led chip 101 is formed on the encapsulant layer 102, and the pixel driving circuit 104 is directly connected to the led chip 101 without being connected through the electrical connection line 103. However, after the sealant layer 102 is thinned, the surface thereof is easily uneven, and therefore, it is preferable in this embodiment to form the wiring line 103 after punching to electrically connect the pixel driving circuit 104 and the light emitting diode chip 101.
S25: the first package plate 106 is disposed on a side of the pixel driving circuit away from the led chip. As shown in fig. 6 (e).
S26: the color conversion structure 107 is disposed on a side of the led chip 101 away from the pixel driving circuit 104, and is configured to convert a color of light emitted from the led chip 101. Specifically, as shown in fig. 6 (f), the color conversion structure is disposed on the side of the light emitting diode chip 101 facing away from the pixel driving circuit 104 after the second interposer 130 is removed. Specifically, the second interposer 130 may be removed by laser, then the second laser glue on the sealing glue layer 102 and the light emitting diode chip 101 is removed by plasma etching, and the color conversion structure 107 is disposed on a side of the light emitting diode chip 101 and the sealing glue layer 102 away from the pixel driving circuit 104.
S27: a second package plate 108 is arranged on a side of the color conversion structure 107 facing away from the led chip 101. As shown in fig. 6 (g).
In summary, in the embodiment, the pixel driving circuit 104 is directly formed on the side of the led chip 101 away from the substrate 110, and the led chip 101 does not need to be transferred to a driving backplane and then bonded, so that the number of times of transferring the led chip 101 can be reduced, which is beneficial to improving the yield of the display screen. And after the substrate 110 is removed, the color conversion structure 107 is arranged on the side of the light emitting diode chip 101 away from the pixel driving circuit 104 to realize colorization of the display screen, so that the light emitting diode chips 101 do not need to be arranged in a sheet and then transferred. Because the density of the plurality of light emitting diode chips 101 is higher when the plurality of light emitting diode chips 101 are formed on the substrate 110, the plurality of light emitting diode chips 101 do not need to be arranged and then transferred, and the relative positions of the plurality of light emitting diode chips 101 are not changed, the transfer times of the light emitting diode chips 101 can be reduced, the yield of the display screen is improved, the pixel density of the display screen is ensured, and the display screen has the characteristic of high pixel density.
EXAMPLE III
Referring to fig. 7 and fig. 8, a third embodiment of the present application discloses a display screen 100, where the display screen 100 can be applied to a display device. Specifically, the display screen 100 includes an encapsulant layer 102, a plurality of led chips 101, at least one pixel driving circuit 104, a first package plate 106, a color conversion structure 107, and a second package plate 108. The plurality of light emitting diode chips 101 are embedded in the adhesive layer 102, the pixel driving circuit 104 is formed on one side of the adhesive layer 102, the pixel driving circuit 104 is electrically connected to at least one light emitting diode chip 101, and the pixel driving circuit 104 is used for driving the corresponding light emitting diode chip 101 to emit light. The color conversion structure 107 is disposed on a side of the adhesive layer 102 away from the pixel driving circuit 104, and the color conversion structure 107 is used for converting a color of light of the led chip 101. The second package plate 108 is arranged at a side of the color conversion structure 107 facing away from the led chip 101.
In the display screen 100 in this embodiment, the monochromatic light emitting diode chips 101 are adopted, and then the color conversion structure 107 is disposed on a side of the light emitting diode chips 101 away from the pixel driving circuit 104 to realize colorization of the display screen 100, so that the light emitting diode chips 101 do not need to be arranged and then transferred. Because the density of the plurality of light emitting diode chips 101 is high when the plurality of light emitting diode chips 101 are formed on the substrate 110, the plurality of light emitting diode chips 101 do not need to be arranged and then transferred, and the relative positions of the plurality of light emitting diode chips 101 are not changed, the transfer times of the light emitting diode chips 101 can be reduced, the yield of the display screen 100 is improved, the pixel density of the display screen 100 is ensured, and the display screen 100 has the characteristic of high pixel density.
Further, the display screen 100 further includes a plurality of electrical connection lines 103, a plurality of through holes are disposed on one side of the sealant layer 102 facing the pixel driving circuit 104, the plurality of through holes correspond to the electrodes of the plurality of light emitting diode chips 101 one by one, the plurality of through holes communicate with the electrodes of the plurality of light emitting diode chips 101 and the pixel driving circuit 104, and the electrical connection lines 103 penetrate through the through holes and are electrically connected with the electrodes of the corresponding light emitting diode chips 101 and the pixel driving circuit 104.
The encapsulation layer 102 is used as a substrate, the pixel driving circuit 104 can be formed on a side of the encapsulation layer 102 away from the led chip 101 by exposure and etching, and the pixel driving circuit 104 is connected to the wiring line 103 to electrically connect the led chip 101, so as to control the led chip 101 to emit light or extinguish. Since the pixel driving circuit 104 is directly formed on the side of the led chip 101 away from the substrate 110, the led chip 101 does not need to be transferred to a driving backplane for bonding, which can reduce the number of times of transferring the led chip 101, and is beneficial to improving the yield of the display screen 100.
Specifically, the color conversion structure 107 includes a black matrix 1071, a plurality of quantum dots 1072, and a plurality of filters 1073, the black matrix 1071 is provided with a plurality of openings spaced from each other, at least a portion of the openings are provided with the quantum dots 1072, the plurality of filters 1073 are correspondingly provided with the plurality of openings, and the quantum dots 1072 are located between the filters 1073 and the light emitting diode chip 101. When carrying out the colour conversion of light through quantum dot 1072, light filter 1073 can restrict the colour of emergent light, avoids the light of different colours to jet out from black matrix 1071's same opening and influences the display effect, and black matrix 1071 can block adjacent open-ended light mutual interference, further guarantees the display effect.
Example four
Referring to fig. 9, a fourth embodiment of the invention discloses a display device 1, and fig. 9 is a schematic structural diagram of a notebook computer using the display device 1, specifically, the display device 1 includes the display panel. It is understood that the display device 1 includes, but is not limited to, a tablet computer, an electronic reader, a notebook computer, a network television, a wearable device, and other devices having a display function. Since the display device 1 has the display panel, the display device 1 also has all the technical effects of the display panel, that is, the number of times of transferring the led chips in the preparation of the display screen 100 can be reduced, the yield of the display screen 100 can be improved, and the improvement of the pixel density of the display screen 100 and the display effect of the display device 1 can be facilitated.
The display screen, the manufacturing method thereof, and the display device disclosed in the embodiments of the present invention are described in detail above, and the principle and the embodiment of the present invention are explained in this document by applying specific examples, and the description of the above embodiments is only used to help understanding the display screen, the manufacturing method thereof, the display device, and the core concept thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A preparation method of a display screen is characterized by comprising the following steps:
forming a plurality of light emitting diode chips arranged at intervals on one side of a substrate;
forming a sealing adhesive layer on one side of the substrate, where the light-emitting diode chips are arranged, wherein the light-emitting diode chips are embedded in the sealing adhesive layer, and the sealing adhesive layer is provided with a first surface deviating from the substrate;
forming at least one pixel driving circuit on the first surface, wherein the pixel driving circuit is electrically connected with at least one light emitting diode chip and is used for controlling the light emitting diode chip to emit light;
arranging a first packaging plate on one side of the pixel driving circuit, which is far away from the sealing adhesive layer;
removing the substrate;
arranging a color conversion structure on one side of the sealing adhesive layer, which is far away from the pixel driving circuit, and converting the color of light emitted by the light emitting diode chip;
and arranging a second packaging plate at one side of the color conversion structure, which is far away from the light-emitting diode chip.
2. The method for preparing the light-emitting diode chip, as claimed in claim 1, wherein the step of forming the adhesive layer on the side of the substrate where the light-emitting diode chip is disposed comprises:
arranging a first laser glue on one side of the first transfer board;
and arranging the first laser glue on one side of the substrate with the light-emitting diode chip in a hot-pressing mode to form the sealing glue layer.
3. The method as claimed in claim 1, wherein the forming at least one pixel driving circuit on the first surface, the pixel driving circuit being electrically connected to at least one of the led chips for controlling the corresponding led chip to emit light comprises:
a plurality of through holes are formed in the first surface and correspond to the electrodes of the plurality of light-emitting diode chips;
forming a connecting circuit used for being electrically connected with the electrode of the light-emitting diode chip in the through hole;
and at least one pixel driving circuit is formed on the first surface, and the pixel driving circuit is electrically connected with the corresponding light-emitting diode chip through the circuit.
4. The method for preparing a light emitting diode chip according to claim 3, wherein the forming of an electrical circuit in the through hole for electrical connection with an electrode of the light emitting diode chip comprises:
and enabling metal plating to be attached in the through hole in an evaporation or sputtering mode to form a wiring circuit electrically connected with the electrode of the light emitting diode chip.
5. The method of claim 3, wherein the opening a plurality of through holes in the first surface comprises:
and forming a plurality of through holes on one side of the sealing adhesive layer, which is far away from the substrate, by using a plasma etching process.
6. The method of any one of claims 1-5, wherein the color conversion structure comprises a black matrix, a plurality of quantum dots, and a plurality of optical filters, the black matrix has a plurality of spaced openings, at least some of the openings have the quantum dots disposed therein, the plurality of optical filters are correspondingly disposed in the plurality of openings, and the quantum dots are disposed between the optical filters and the LED chips.
7. A display screen, wherein the display screen comprises:
a glue sealing layer;
the plurality of light emitting diode chips are embedded in the adhesive sealing layer;
the pixel driving circuit is formed on one side of the adhesive layer, is electrically connected with the at least one light-emitting diode chip and is used for driving the corresponding light-emitting diode chip to emit light;
the first packaging plate is arranged on one side, away from the sealing adhesive layer, of the pixel driving circuit;
the color conversion structure is arranged on one side, away from the pixel driving circuit, of the sealing adhesive layer and is used for converting the color of light rays of the light-emitting diode chip; and
and the second packaging plate is arranged on one side of the color conversion structure, which is deviated from the light-emitting diode chip.
8. The display screen of claim 7, further comprising a plurality of electrical connections, wherein a side of the sealing adhesive layer facing the pixel driving circuit is provided with a plurality of through holes, the plurality of through holes correspond to the plurality of electrodes of the light emitting diode chips in a one-to-one manner, the plurality of through holes communicate the plurality of electrodes of the light emitting diode chips and the pixel driving circuit, and the electrical connections are disposed through the through holes and electrically connected to the corresponding electrodes of the light emitting diode chips and the pixel driving circuit.
9. The display screen of claim 7, wherein the color conversion structure comprises a black matrix, a plurality of quantum dots, and a plurality of optical filters, the black matrix has a plurality of spaced openings, at least some of the openings have the quantum dots, the plurality of optical filters are correspondingly disposed in the plurality of openings, and the quantum dots are located between the optical filters and the light emitting diode chip.
10. A display device, characterized in that the display device comprises a display screen prepared by the preparation method according to any one of claims 1 to 6; alternatively, the first and second electrodes may be,
the display device comprising a display screen according to any one of claims 7-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210785135.8A CN115692457A (en) | 2022-06-29 | 2022-06-29 | Display screen, preparation method thereof and display device |
| PCT/CN2022/140516 WO2024001085A1 (en) | 2022-06-29 | 2022-12-21 | Display screen, preparation method therefor, and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210785135.8A CN115692457A (en) | 2022-06-29 | 2022-06-29 | Display screen, preparation method thereof and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115692457A true CN115692457A (en) | 2023-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210785135.8A Pending CN115692457A (en) | 2022-06-29 | 2022-06-29 | Display screen, preparation method thereof and display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115692457A (en) |
| WO (1) | WO2024001085A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117393688A (en) * | 2023-12-11 | 2024-01-12 | 元旭半导体科技(无锡)有限公司 | Display module, preparation method and display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11756937B2 (en) * | 2017-02-13 | 2023-09-12 | Seoul Semiconductor Co., Ltd. | Display apparatus and method of manufacturing the same |
| KR102113200B1 (en) * | 2017-12-22 | 2020-06-03 | 엘씨스퀘어(주) | Transfer Method using Deformable Film |
| CN215933606U (en) * | 2021-08-19 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Display panel and display device |
| CN114050170A (en) * | 2021-08-19 | 2022-02-15 | 重庆康佳光电技术研究院有限公司 | Display panel and method for manufacturing the same |
| CN113644086B (en) * | 2021-10-14 | 2022-02-18 | 惠科股份有限公司 | Preparation method of display panel and display panel |
-
2022
- 2022-06-29 CN CN202210785135.8A patent/CN115692457A/en active Pending
- 2022-12-21 WO PCT/CN2022/140516 patent/WO2024001085A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117393688A (en) * | 2023-12-11 | 2024-01-12 | 元旭半导体科技(无锡)有限公司 | Display module, preparation method and display device |
| CN117393688B (en) * | 2023-12-11 | 2024-03-08 | 元旭半导体科技(无锡)有限公司 | Display module, preparation method and display device |
Also Published As
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|---|---|
| WO2024001085A1 (en) | 2024-01-04 |
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