CN214541402U - High-density pixel display module - Google Patents

Abstract

The utility model discloses a high-density pixel display module, which comprises three substrate modules which are sequentially stacked, wherein any one of the three substrate modules comprises a substrate; the high-density pixel display module is divided into a plurality of pixel units, and any one of the pixel units comprises three light-emitting sub-pixels; any one of the three light-emitting sub-pixels comprises a light-emitting chip and at most one wavelength conversion layer arranged above the light-emitting chip; the light emitting chips and the wavelength conversion layer are respectively arranged on the corresponding substrate base plates, and only one light emitting chip is arranged on any one substrate base plate in one pixel unit. The high-density pixel display module reduces the processing difficulty of a single substrate module by arranging the light-emitting chips in the three substrate modules and correspondingly arranging the wavelength conversion layer, improves the yield of the high-density pixel display module, and has good practicability.

Description

High-density pixel display module

Technical Field

The utility model relates to the demonstration field, concretely relates to high density pixel display module.

Background

With the progress of manufacturing technology, high-density display modules gradually become the main development direction of current LED display, but the existing high-density display modules still face the problem of high difficulty in chip transfer, and even if the chip transfer yield reaches 99.9999% in specific processing, the number of bad points in an 8K resolution display screen composed of the high-density display modules is still over 100pcs, which is also the main reason for limiting the processing throughput of the current high-density display modules.

In addition, the temperature generated when the poor points in the high-density display module are re-melted and welded in the repair process can be transmitted to the vicinity of the chip and affect the welding of the chip, so that the repair difficulty of the high-density display module is increased, and the repair difficulty of the high-density display module is increased along with the higher chip density of the high-density display module; and the color purity of the conventional LED chip is difficult to meet the high color gamut requirement of the high-density display module, so that the color purity is often improved by means of wavelength conversion materials such as fluorescent powder and quantum dots, and the high-color gamut display effect is realized.

SUMMERY OF THE UTILITY MODEL

In order to reduce the processing degree of difficulty of high density display module, the utility model provides a high density pixel display module reduces the high density display module processing degree of difficulty through establishing the mode that emitting chip and corresponding wavelength conversion layer set up in three base plate module.

Correspondingly, the utility model provides a high-density pixel display module, which comprises three substrate modules which are stacked in sequence, wherein any one of the three substrate modules comprises a substrate;

the high-density pixel display module is divided into a plurality of pixel units, and any one of the pixel units comprises three light-emitting sub-pixels;

any one of the three light-emitting sub-pixels comprises a light-emitting chip and at most one wavelength conversion layer arranged above the light-emitting chip;

the light emitting chips and the wavelength conversion layer are respectively arranged on the corresponding substrate base plates, and only one light emitting chip is arranged on any one substrate base plate in one pixel unit.

In an optional implementation manner, any one of the pixel units further includes a switch TFT corresponding to the light emitting chip one to one;

the switch TFT and the corresponding light-emitting chip are arranged on the same substrate;

the light emitting chips are controlled based on the corresponding switching TFTs.

In an optional embodiment, among the three base board modules, the substrate board of the base board module disposed at the top layer and the substrate board of the base board module disposed at the middle layer are transparent boards, respectively.

In an optional embodiment, any of the substrate modules further comprises a circuit layer;

the light-emitting chip is a flip chip, the circuit layer is covered on the corresponding substrate base plate, and the light-emitting chip is bonded on the corresponding circuit layer;

or the light-emitting chips are normally mounted chips, the light-emitting chips are fixed on the corresponding substrate base plates, the circuit layers cover the corresponding substrate base plates and the surfaces of the light-emitting chips, and the light-emitting chips are bonded on the corresponding circuit layers.

In an optional embodiment, any one of the substrate module located at the top layer and the substrate module located at the middle layer further includes a light shielding layer, the light shielding layer is hollowed at positions corresponding to the light emitting chips and the wavelength conversion layer at the same layer, and the light shielding layer is hollowed at positions corresponding to the light emitting chips and the wavelength conversion layer at the lower layer.

In an alternative embodiment, any one of the three substrate modules comprises a transparent encapsulation layer arranged on top.

In an optional embodiment, the transparent encapsulation layer of the substrate module on the top layer is a frosted structure.

In an alternative embodiment, all the pixel units are arranged in an array along a first direction and a second direction, and the first direction and the second direction are perpendicular to each other.

In an optional embodiment, three light-emitting sub-pixels in any one of the pixel units are arranged along a first direction;

or three light-emitting sub-pixels in any one of the pixel units are arranged along the second direction.

In an optional embodiment, in the first direction or the second direction, a distance between two points at the same position in two adjacent pixel units is a pixel pitch L, and a light-emitting angle of the light-emitting chip is a;

the thickness of the transparent packaging layer of the substrate module positioned at the bottom layer is h 1;

the substrate base plate of the substrate module positioned in the middle layer has a thickness h 2;

wherein L/(h1+ h2) > tan (A/2).

In an optional embodiment, in the first direction or the second direction, a distance between a midpoint of any one of the light emitting chips on the substrate module located in the middle layer and a midpoint of the wavelength conversion layer closest to the light emitting chip is D;

the thickness of the transparent packaging layer of the substrate module positioned in the middle layer is h 3;

the substrate base plate of the substrate module positioned at the top layer has a thickness h 4;

wherein D/(h3+ h4) > tan (A/2).

In an optional embodiment, the device further comprises an outer frame;

the three substrate modules which are sequentially stacked surround the inner wall of the outer frame, and the inner wall of the outer frame is in contact with the peripheries of the three substrate modules which are sequentially stacked.

The utility model provides a high density pixel display module, through setting up three luminescence chip in the same pixel unit in a plurality of base plate modules respectively, reduced the density of setting up and the transfer degree of difficulty of luminescence chip on single base plate module, improved the product yield and reduced the rate of reprocessing; the color of the emergent light of the luminous sub-pixel can be obtained by exciting the corresponding wavelength conversion layer through the luminous chip so as to improve the color purity of the emergent light of the luminous sub-pixel; due to the arrangement of the shading layer, the phenomenon that the non-corresponding wavelength conversion layer is mistakenly excited by large-angle light of the light-emitting chip can be avoided, and the accuracy of the final color display of the pixel unit is guaranteed; the transparent packaging layer of the topmost substrate module adopts a frosted structure, so that the light mixing effect of emergent rays of each light-emitting sub-pixel can be increased, and the color display effect of the pixel unit is improved; the thickness of different parts is limited, so that the possibility of crosstalk between pixel units and inside the pixel units can be reduced, and the color development accuracy and the resolution of the high-density pixel display module are further improved.

Drawings

Fig. 1 is a schematic top view of a high-density pixel display module according to a first embodiment of the present invention;

fig. 2 is a schematic cross-sectional structure diagram of a high-density pixel display module according to a first embodiment of the present invention;

fig. 3 is a schematic cross-sectional structure diagram of a high-density pixel display module according to a second embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.

The first embodiment is as follows:

fig. 1 shows a schematic top view structure diagram of a high-density pixel display module according to an embodiment of the present invention, and fig. 2 shows a schematic cross-sectional structure diagram of a high-density pixel display module according to an embodiment of the present invention.

Specifically, the embodiment of the utility model provides a high density pixel display module, high density pixel display module is including the three base plate module that stacks gradually the setting in the embodiment of the utility model provides an in, for the convenience of explanation, three base plate module is first base plate module 201, second base plate module 202 and third base plate module 203 respectively, and wherein, first base plate module 201 sets up in the bottom, and second base plate module 202 sets up in the middle level, and third base plate module 203 sets up in the top layer.

Specifically, any one of the three base modules includes the substrate base 301 disposed at the bottom, and since the three base modules have similar or identical common structures, the same structures are indicated by only one number in the drawings for clarity of illustration.

Specifically, the high-density pixel display module is divided into a plurality of pixel units 1, any one pixel unit 1 in the plurality of pixel units 1 includes three light-emitting sub-pixels, and specifically, the pixel units and the light-emitting sub-pixels are divided into a space region.

In the embodiment of the present invention, for convenience of illustration, the three light emitting sub-pixels are named as a first light emitting sub-pixel 101, a second light emitting sub-pixel 102, and a third light emitting sub-pixel 103, respectively.

Specifically, any one of the three light-emitting sub-pixels comprises a light-emitting chip 401 and at most one wavelength conversion layer 402 arranged above the light-emitting chip 401; specifically, the specific meaning of at most one wavelength conversion layer 402 disposed over the light emitting chip 401 is that one wavelength conversion layer 402 may be disposed over the light emitting chip 401 or no wavelength conversion layer 402 may be disposed.

Specifically, the light emitting chips 401 and the wavelength conversion layer 402 are respectively disposed on the corresponding substrate boards 301, and only one light emitting chip 401 is disposed on any one of the substrate boards 301 in one pixel unit 1. Specifically, since only one light emitting chip 401 is disposed on each substrate 301, the arrangement of the wavelength conversion layer 402 is relatively confirmed; specifically, if the light emitting chip 401 is disposed on the substrate board 301 of the first baseboard module 201, the wavelength conversion layer 402 may be disposed on the substrate board 301 of the second baseboard module 202 or the substrate board 301 of the third baseboard module 203 corresponding to the position of the light emitting chip 401; if the light emitting chips 401 are disposed on the substrate 301 of the second submount module 202, the wavelength conversion layer 402 may be disposed on the substrate 301 of the third submount module 203 corresponding to the positions of the light emitting chips 401; if the light emitting chip 401 is disposed on the substrate 301 of the third substrate module 203, the wavelength conversion layer 402 is not disposed above the light emitting chip 401; specifically, the positions of the vertical projections of the light emitting chips 401 provided on each of the base substrates 301 in the light outgoing direction are shifted from each other, and the positions of the vertical projections of the wavelength conversion layers 402 above the light emitting chips 401 in the light outgoing direction are also shifted from each other.

Specifically, referring to the view direction of fig. 1, the embodiment of the present invention divides a pixel unit into three light emitting sub-pixels, each of which is used for displaying a specific color, so that the colors of the three light emitting sub-pixels of the pixel unit can be mixed to display a plurality of colors; specifically, in the embodiment of the present invention, the first light-emitting sub-pixel 101 is used for emitting red light, the second light-emitting sub-pixel 102 is used for emitting blue light, and the third light-emitting sub-pixel 103 is used for emitting green light. Specifically, the emitting manner of each light emitting sub-pixel for realizing the light of the specific color may be: the light emitted by the light emitting chip is consistent with the color of the emergent light required by the corresponding light emitting sub-pixel, or the light emitting chip obtains the emergent light of the color required by the corresponding light emitting sub-pixel by exciting the wavelength conversion layer positioned above the light emitting chip.

Optionally, the wavelength conversion layer 402 is made of a quantum dot material or a phosphor material.

To sum up, the embodiment of the present invention provides a high-density pixel display module, which separately sets the light emitting chips on three overlapped substrate modules, and can greatly reduce the setting density of the light emitting chips on a single substrate module, and while ensuring that the light emitting effect similar to that of the light emitting chips on the same substrate module can be realized, the requirement of the processing technology can be reduced, the product yield can be improved, and the product repair rate can be reduced; in the display module, for the light-emitting sub-pixels with impure part of the emitted light, the emitted light with the required color is obtained by using the light-emitting chip to excite the wavelength conversion layer to emit light, so that the color purity finally presented by the pixel unit is ensured, the color gamut range of the pixel unit is expanded, and the display effect of the high-density pixel display module is improved.

To the full-color display in pixel unit, in order to facilitate the adjustment, the required color of the three light emitting sub-pixels in a current pixel unit is generally red, green and blue, correspondingly, the embodiment of the present invention provides an example that the color of the emergent light of the first light emitting sub-pixel 101 is red, the color of the emergent light of the second light emitting sub-pixel 102 is blue, and the color of the emergent light of the third light emitting sub-pixel 103 is green.

Due to the manufacturing process of the conventional light emitting chip, the color purity of the conventional light emitting chip is difficult to meet the high color gamut requirement of the DCI-P3 at present, and particularly the color purity of the green light emitting chip, so that the color purity of the conventional light emitting chip needs to be improved by using conversion materials such as fluorescent powder and quantum dots, and the effect of high color gamut display is achieved. Accordingly, in the embodiment of the present invention, the wavelength conversion layer 402 in the third substrate module 203 is a green wavelength conversion layer, and the wavelength conversion layer 402 in the second substrate module 202 is a red wavelength conversion layer.

Optionally, in order to realize independent control over each light emitting chip 401, any one of the pixel units 1 further includes a switch TFT403 corresponding to the light emitting chips 401 one to one; the switch TFT403 and the corresponding light emitting chip 401 are disposed on the same substrate 301; the light emitting chip 401 is controlled based on the corresponding switching TFT 403.

Specifically, to the position that sets up for switch TFT403, because switch TFT403 does not have light-emitting characteristic, in order to avoid influencing the display area of display module, in the embodiment of the utility model provides an, it is concrete, regional for the setting of luminous subpixel, still have the switch region 104 that supplies switch TFT403 to set up in pixel unit 1, the position that sets up of switch TFT403 on the different base plate modules is the same, when a plurality of base plate modules carried out the coincide and set up, switch region 104 overlaps each other to avoid influencing display module's display performance.

Specifically, in order to ensure that the light emitted from the light emitting chip 401 can be emitted from the top substrate module (third substrate module 203), among the three substrate modules, the substrate 301 of the top substrate module (third substrate module 203) and the substrate 301 of the middle substrate module (second substrate module 202) are transparent substrates, respectively.

Specifically, any one of the three substrate modules further includes a circuit layer 302.

Specifically, the circuit layer 302 has different structures according to different types of the light emitting chips 401, in an embodiment of the present invention, as shown in fig. 2 of the drawings, the light emitting chips 401 are flip chips, the circuit layer 302 is covered and disposed on the corresponding substrate 301, and the light emitting chips 401 are bonded on the corresponding circuit layer 302; in the specific processing, the corresponding circuit layer 302 is processed on the substrate 301, and then the light emitting chip 401 and the switching TFT403 are bonded to the corresponding circuit layer 302.

Specifically, in the embodiment of the present invention, the substrate module corresponding to the light emitting chip 401 and the substrate module corresponding to the wavelength conversion layer 402 are disposed in the same light emitting sub-pixel, and the substrate module corresponding to the light emitting chip 401 is disposed above the light emitting chip 401. The reason for adopting this arrangement is that, because the light emitting chips 401 have a certain exit angle, as the distance between the light emitting chip 401 and the corresponding wavelength conversion layer 402 increases, the amount of light entering the corresponding wavelength conversion layer 402 from the exit light of the light emitting chip 401 decreases, and in order to ensure the total amount of light of the light emitting sub-pixels in the specific implementation, the smaller the distance between the wavelength conversion layer 402 and the corresponding light emitting chip 401 is, the better the distance is.

Further, since the large-angle emergent light of the light emitting chips 401 is prone to excite the non-corresponding wavelength conversion layer 402 by mistake, in order to prevent the wavelength conversion layer 402 from being excited by mistake, any one of the substrate module (the third substrate module 203) located at the top layer and the substrate module (the second substrate module 202) located at the middle layer further includes a light shielding layer 404, the light shielding layer 404 is made of a light absorbing material, and the light shielding layer 404 is hollowed out at the positions corresponding to the light emitting chips 401 and the wavelength conversion layer 402 on the same layer so as to accommodate the light emitting chips 401 and the wavelength conversion layer 402 on the same layer; the light shielding layer 404 is hollowed out at positions corresponding to the lower light emitting chips 401 and the lower wavelength conversion layer 402, so that light rays below the light shielding layer 404 can pass through a specific area.

Specifically, in order to ensure the flatness of the top surface of the substrate module on the one hand and ensure better light emission on the other hand, any one of the three substrate modules includes a transparent encapsulation layer 303 disposed on the top. In a specific implementation, the top surface of the transparent encapsulation layer 303 is flat, and the lower portion of the transparent encapsulation layer 303 covers different components according to different structures of the substrate module.

Further, in order to improve the light mixing effect of the emergent light of multiple colors in the pixel unit, it is optional, in an embodiment of the present invention, the transparent encapsulation layer 303 of the substrate module (the third substrate module 203) located at the top layer is a frosted structure. In the specific processing, the top surface of the transparent encapsulating layer 303 of the third substrate module 203 can be roughened and frosted, so that the diffuse reflection capability of the transparent encapsulating layer 303 of the third substrate module 203 is increased, the emergent rays of the light-emitting sub-pixels can be fully mixed, and the light mixing effect is improved. It should be noted that, in the drawings, the transparent encapsulation layer 303 in each substrate module is illustrated by using the same filling pattern.

Specifically, the high-density pixel display module further includes an outer frame 400, the inside of the outer frame 400 is a display area, and in the specific implementation, the display area, that is, the edges of the three substrate modules are welded or bonded to the inner wall of the outer frame 400, so that the three substrate modules form a whole.

In a specific implementation, in the high-density pixel display module according to the embodiment of the present invention, three substrate modules are respectively processed and then stacked to form a desired high-density pixel display module; specifically, the specific processing method of each substrate module is as follows: firstly, manufacturing a circuit layer on a substrate through processes of exposure etching or evaporation growth and the like, and processing the circuit layer to obtain a switch TFT; transferring the light-emitting chip to a corresponding position of the circuit layer and completing bonding; finally, packaging a transparent packaging layer with a flat top surface on the surface of the substrate to complete the manufacture of the substrate module, wherein the transparent packaging layer can be processed by the processes of coating, photoetching, spin coating, mould pressing, injection molding and the like; the method includes the steps that before a transparent packaging layer is processed, a light shielding layer is manufactured on a position where the light shielding layer needs to be arranged through processes of coating, photoetching, spraying or silk-screen printing and the like aiming at a substrate module where the light shielding layer needs to be arranged; and finally, directly laminating the three substrate modules, and bonding the three substrate modules on the outer frame through processes such as edge welding, whole-surface bonding and the like to manufacture the required high-density pixel display module.

Specifically, all the pixel units 1 are arranged in an array along a first direction and a second direction, and the first direction and the second direction are perpendicular to each other. Specifically, as shown in fig. 1, the first direction may be a vertical direction, and the second direction may be a horizontal direction. In the embodiment of the present invention, three light emitting sub-pixels in any one of the pixel units 1 are arranged along a first direction; in a specific implementation, the three light-emitting sub-pixels in any one of the pixel units 1 may also be arranged along the second direction.

Specifically, in first direction or second direction, two adjacent be in pixel unit 1 between two points of same position apart from for pixel interval L, and is concrete, 1 luminescence chip 401 sets up the position in each pixel unit and is fixed, therefore, the utility model discloses a mutual position between luminescence chip 401 limits pixel interval L, and in fact, 1 in two pixel units between arbitrary two points of same position apart from can all regard as pixel interval L, the embodiment of the utility model provides a two in two adjacent pixel units 1 in first direction be in same position apart from between luminescence chip 401 explaining as pixel interval L.

Specifically, assume that the light-emitting angle of the light-emitting chip 401 is a; the thickness of the transparent encapsulating layer 303 of the substrate module (first substrate module 201) positioned at the bottom layer is h1, the thickness of the substrate 301 of the substrate module (second substrate module 202) positioned at the middle layer is h2, the emission base point of the light-emitting angle of the light-emitting chip 401 is the middle point of the bottom surface of the light-emitting chip 401, and the thickness h1 of the transparent encapsulating layer 303 is the distance from the bottom surface of the light-emitting chip 401 to the top surface of the transparent encapsulating layer 303.

Specifically, in order to prevent crosstalk between two adjacent pixel units, it is necessary to avoid that the light emitted from one light emitting chip in one pixel unit is irradiated above the position of the light emitting chip located at the same position on the adjacent pixel unit, where L/(h1+ h2) > tan (a/2). Through the arrangement mode, the light emitted by the light emitting chip can not be interfered to the adjacent pixel units.

Further, in the first direction or the second direction, a distance between a midpoint of any one of the light emitting chips 401 on the substrate module (second substrate module 202) located in the middle layer and a midpoint of the wavelength conversion layer 402 closest to the light emitting chip 401 is D; the thickness of the transparent encapsulating layer 303 of the middle substrate module (the second substrate module 202) is h3, it should be noted that the light emitted from the side surface of the light emitting chip 401 on the middle substrate module (the second substrate module 202) is partially blocked by the light blocking layer 404, and correspondingly, the thickness h3 of the transparent encapsulating layer 303 on the middle substrate module (the second substrate module 202) is the distance from the top surface of the light blocking layer 404 to the top surface of the transparent encapsulating layer 303; the thickness of the substrate board 301 of the board module (third board module 203) on the top layer is h 4; wherein D/(h3+ h4) > tan (A/2). Through the limiting mode, the light emitted by the light emitting chip can be prevented from being interfered to the upper side of the adjacent wavelength conversion layer, and the crosstalk between the two adjacent pixel units and inside the pixel units is prevented.

Example two:

fig. 3 is a schematic cross-sectional view of a high-density pixel display module according to an embodiment of the present invention.

Compared with the first embodiment, the embodiment of the present invention adaptively adjusts the structure of the circuit layer 302 according to the different structure adopted by the light emitting chip 401. Specifically, in the embodiment of the present invention, the light emitting chip 401 is a front-mounted chip, the light emitting chip 401 is fixed on the corresponding substrate base plate 301, the circuit layer 302 covers the corresponding substrate base plate 301 and covers the surface of the light emitting chip 401, and the light emitting chip 401 is bonded on the corresponding circuit layer 302. In actual processing, the light emitting chips 401 are fixed on the corresponding substrate boards 301, then the circuit layers 302 are processed, and then the switching TFTs 403 are bonded on the corresponding circuit layers 302.

To sum up, the high-density pixel display module provided by the utility model reduces the setting density and the transfer difficulty of the light-emitting chips on a single substrate module by arranging the three light-emitting chips in the same pixel unit in a plurality of substrate modules, improves the product yield and reduces the repair rate; the color of the emergent light of the luminous sub-pixel can be obtained by exciting the corresponding wavelength conversion layer through the luminous chip so as to improve the color purity of the emergent light of the luminous sub-pixel; due to the arrangement of the shading layer, the phenomenon that the non-corresponding wavelength conversion layer is mistakenly excited by large-angle light of the light-emitting chip can be avoided, and the accuracy of the final color display of the pixel unit is guaranteed; the transparent packaging layer of the topmost substrate module adopts a frosted structure, so that the light mixing effect of emergent rays of each light-emitting sub-pixel can be increased, and the color display effect of the pixel unit is improved; the thickness of different parts is limited, so that the possibility of crosstalk between pixel units and inside the pixel units can be reduced, and the color development accuracy and the resolution of the high-density pixel display module are further improved.

The above detailed description is made on a high-density pixel display module provided by the embodiments of the present invention, and the specific examples are applied herein to explain the principles and embodiments of the present invention, and the description of the above embodiments is only used to help understand the method and core ideas of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.

Claims (12)

1. A high-density pixel display module is characterized by comprising three substrate modules which are sequentially stacked, wherein any one of the three substrate modules comprises a substrate;

the high-density pixel display module is divided into a plurality of pixel units, and any one of the pixel units comprises three light-emitting sub-pixels;

any one of the three light-emitting sub-pixels comprises a light-emitting chip and at most one wavelength conversion layer arranged above the light-emitting chip;

the light emitting chips and the wavelength conversion layer are respectively arranged on the corresponding substrate base plates, and only one light emitting chip is arranged on any one substrate base plate in one pixel unit.

2. The high-density pixel display module of claim 1, wherein any one of the pixel units further comprises a switching TFT in one-to-one correspondence with the light emitting chip;

the switch TFT and the corresponding light-emitting chip are arranged on the same substrate;

the light emitting chips are controlled based on the corresponding switching TFTs.

3. The high-density pixel display module as claimed in claim 1, wherein among the three base plate modules, the base plate of the base plate module disposed at the top layer and the base plate of the base plate module disposed at the middle layer are transparent base plates, respectively.

4. The high-density pixel display module of claim 1, wherein any one of said substrate modules further comprises a circuit layer;

the light-emitting chip is a flip chip, the circuit layer is covered on the corresponding substrate base plate, and the light-emitting chip is bonded on the corresponding circuit layer;

or the light-emitting chips are normally mounted chips, the light-emitting chips are fixed on the corresponding substrate base plates, the circuit layers cover the corresponding substrate base plates and the surfaces of the light-emitting chips, and the light-emitting chips are bonded on the corresponding circuit layers.

5. The high-density pixel display module as claimed in claim 1, wherein any one of the substrate module at the top layer and the substrate module at the middle layer further comprises a light shielding layer, the light shielding layer is hollowed out at a position corresponding to the light emitting chip and the wavelength conversion layer at the same layer, and the light shielding layer is hollowed out at a position corresponding to the light emitting chip and the wavelength conversion layer at the lower layer.

6. The high-density pixel display module of claim 1, wherein any one of the three substrate modules includes a transparent encapsulation layer disposed on top.

7. The high-density pixel display module as claimed in claim 6, wherein the transparent encapsulation layer of the substrate module at the top layer is a frosted structure.

8. The high-density pixel display module of claim 1, wherein all of the pixel cells are arranged in an array along a first direction and a second direction, the first direction and the second direction being perpendicular to each other.

9. The high-density pixel display module of claim 8, wherein the three light-emitting sub-pixels in any one of the pixel units are arranged along a first direction;

or three light-emitting sub-pixels in any one of the pixel units are arranged along the second direction.

10. The high-density pixel display module of claim 9, wherein in the first direction or the second direction, a distance between two points at the same position in two adjacent pixel units is a pixel pitch L, and a light-emitting angle of the light-emitting chip is a;

the thickness of the transparent packaging layer of the substrate module positioned at the bottom layer is h 1;

the substrate base plate of the substrate module positioned in the middle layer has a thickness h 2;

wherein L/(h1+ h2) > tan (A/2).

11. The high-density pixel display module of claim 10, wherein in the first direction or the second direction, a distance between a midpoint of any one of the light emitting chips on the substrate module at the middle layer and a midpoint of the wavelength conversion layer closest to the light emitting chip is D;

the thickness of the transparent packaging layer of the substrate module positioned in the middle layer is h 3;

the substrate base plate of the substrate module positioned at the top layer has a thickness h 4;

wherein D/(h3+ h4) > tan (A/2).

12. The high-density pixel display module of any one of claims 1-11, further comprising a frame;

the three substrate modules which are sequentially stacked surround the inner wall of the outer frame, and the inner wall of the outer frame is in contact with the peripheries of the three substrate modules which are sequentially stacked.

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