CN115692336A - 隔离式温度传感器装置 - Google Patents

隔离式温度传感器装置 Download PDF

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Publication number
CN115692336A
CN115692336A CN202210867183.1A CN202210867183A CN115692336A CN 115692336 A CN115692336 A CN 115692336A CN 202210867183 A CN202210867183 A CN 202210867183A CN 115692336 A CN115692336 A CN 115692336A
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metallization layer
temperature sensor
layer
uppermost
metallization
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CN202210867183.1A
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English (en)
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埃尼斯·通杰尔
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN115692336A publication Critical patent/CN115692336A/zh
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Abstract

本申请案的实施例涉及隔离式温度传感器装置。在所描述实例中，一种设备包含：封装衬底(图6D，603)，其包含经配置用于安装半导体裸片的裸片垫(609)、连接到所述裸片垫(609)的第一引线(611)以及第二引线及第三引线(605)；及半导体裸片(310)，其包含安装在所述裸片垫上的温度传感器(401)。所述半导体裸片(310)包含：第一金属化层，其是最接近所述半导体裸片的有源表面的金属化层，且连续金属化层(411)上覆于前一金属化层，所述金属化层包含用于特定金属化层的电介质材料中的相应导体层及导电通路；及所述温度传感器(401)，其由最上金属化层中的导体层形成且耦合到所述第二引线及所述第三引线。

Description

隔离式温度传感器装置
技术领域
本技术领域大体上涉及封装半导体温度传感器装置，且更特定来说涉及对包含电隔离的半导体温度传感器的封装。
背景技术
对于半导体温度传感器，半导体装置包含具有随温度变动的参数的组件。所述参数应以一种方式变动使得所述参数可用以产生随温度可预测地变动的信号。所述装置是温度传感器。半导体温度传感器可使用阻抗、电容、电感或晶体管电压阈值作为温度传感器装置，且可实施与所述装置组合的电路系统以输出取决于温度传感器装置且随温度变动的信号、电流或电压。在实例中，使用具有随温度变动的介电常数的电容。在另一实例中，可使用阻抗或阻抗对。在实例中，一对阻抗结合与绝对温度成正比(“PTAT”)电路中的电流源使用。可使用增量VBE(基极-发射极电压)温度感测，从而使用具有随温度变化的基极到发射极电压特性的双极晶体管以感测温度。
当感测高压应用的温度时，半导体温度传感器必定暴露于高压。集成电路装置用于将越来越高的电压，例如数百或数千伏递送到负载。峰值或浪涌电压可为几千伏。其中需要温度传感器的系统区域，例如总线或大导体，也可在其上具有非常高的电压。半导体温度传感器可能无法承受与高压相关联的电场。当电压超过半导体装置的电介质击穿电压时，半导体温度传感器的故障可能因电介质击穿而发生。即使当所述温度传感器热耦合到导体、总线或其它所关注表面时，温度传感器装置也需要电隔离。光学传感器有时用以感测温度且实现所需电隔离，然而并非所有应用均提供适合光学感测的信号。需要半导体温度传感器的改进。
发明内容
在所描述实例中，一种设备包含：封装衬底，其包含经配置用于安装半导体裸片的裸片垫、连接到所述裸片垫的第一引线以及与所述第一引线及所述裸片垫隔开并隔离的第二引线及第三引线；及半导体裸片，其包含安装在所述裸片垫上的温度传感器。所述半导体裸片包含：半导体衬底，其具有导电地安装到所述裸片垫的背侧表面且具有与所述背侧表面相对的有源表面；连续金属化层，其堆叠在所述半导体裸片的所述有源表面上方，第一金属化层是最接近所述有源表面的金属化层，且所述连续金属化层上覆于前一金属化层，最上金属化层距所述有源表面最远，所述连续金属化层包括用于特定金属化层的电介质材料中的相应导体层，且包含从所述相应导体层延伸穿过所述电介质材料到邻近金属化层的导电通路。所述温度传感器由所述最上金属化层中的所述相应导体层形成；且由所述最上金属化层中的所述相应导体层形成的高压环与所述温度传感器隔开且环绕所述温度传感器。接合垫由所述最上金属化层中的所述导体层形成，经配置用于进行电连接；且电连接将所述接合垫耦合到所述第二引线及所述第三引线。
附图说明
图1是小外形集成电路(SOIC)半导体装置封装的投影视图。
图2是四方扁平无引线(QFN)半导体装置封装的投影视图。
图3A是包含半导体裸片的半导体晶片的投影视图，图3B是半导体裸片的投影视图。
图4A以平面视图说明包含温度传感器的布置的半导体裸片；图4B以横截面视图说明图4A的温度传感器的一些特征；图4C以横截面视图说明图4A到4B的半导体裸片的一部分，展示所述布置的温度传感器的额外细节。
图5以平面视图说明图4A到4C的温度传感器的电场模拟结果。
图6A到6D以横截面视图说明形成在布置中具有温度传感器的封装式半导体裸片时的选定步骤。
图7以投影视图说明在含带引线封装的布置中具有温度传感器的封装式半导体裸片，所述温度传感器耦合到总线。
图8以替代布置说明在无引线封装中具有温度传感器的半导体裸片。
图9以流程图说明用于形成所述布置的封装式温度传感器装置的方法。
具体实施方式
除非另有指示，否则不同图中的对应数字及符号通常是指对应部分。所述图不一定按比例绘制。
元件在本文中被描述为“经耦合”。如本文中所使用，术语“经耦合”包含直接连接的元件，及甚至在耦合中介元件或导线的情况下电连接的元件。
本文中使用术语“半导体裸片”。如本文中所使用，半导体裸片可为例如双极晶体管的离散半导体装置、一起制造在单一半导体裸片上的几个离散装置(例如一对功率FET开关)，或半导体裸片可为具有多个半导体装置，例如A/D转换器中的多个电容器的集成电路。半导体裸片可包含例如电阻器、电感器、滤波器的无源装置，或可包含例如晶体管的有源装置。半导体裸片可为具有经耦合以形成功能电路，例如微处理器或存储器装置的数百或数千个晶体管的集成电路。半导体裸片可为例如传感器的无源装置，实例传感器包含光电池、换能器及电荷耦合装置(CCD)。半导体裸片可为微机电系统(MEMS)装置，例如数字微镜装置(DMD)。用于功率应用的半导体裸片包含离散功率晶体管、用以操作功率晶体管的栅极驱动器、实施功率电路系统所需的无源装置(例如电容器、电感器及电阻器)及包含增加对系统的可靠性及控制的保护性传感器(例如浪涌电流传感器)的智能功率装置。在一些应用中，这些装置可由不同半导体材料制造，且可为安装在单一装置封装中的单独半导体裸片。在所述布置中，半导体裸片包含温度传感器。
本文中使用术语“封装式电子装置”。封装式电子装置具有电子耦合到端子的至少一个半导体裸片且具有保护及覆盖所述半导体裸片的封装本体。在一些布置中，多个半导体裸片可封装在一起。例如，可将功率金属氧化物半导体(MOS)场效应晶体管(FET)半导体裸片及第二半导体裸片(例如栅极驱动器裸片或控制器装置裸片)封装在一起以形成单一封装式电子装置。例如无源件的额外组件可被包含在封装式电子装置中。半导体裸片安装到提供导电引线的封装衬底，所述导电引线的一部分形成封装式电子装置的端子。半导体裸片可安装到封装衬底，其中有源装置表面背对封装衬底且背侧表面面向并安装到所述衬底。替代地，半导体裸片可倒装芯片安装为有源表面面向衬底表面，且半导体裸片通过导电柱或焊球安装到所述衬底的引线。封装式电子装置可具有在模制工艺中由热固性环氧树脂形成，或通过使用在室温下为液体且随后固化的环氧树脂、塑料或树脂形成的封装本体。封装本体可为封装式电子装置提供气密封装。封装本体可使用囊封工艺形成在模具中，然而，在囊封期间未覆盖所述衬底的引线的一部分，这些所暴露引线部分为封装式电子装置提供暴露端子。
本文中使用术语“封装衬底”。封装衬底是经布置以接纳半导体裸片且在成品半导体封装中支撑半导体裸片的衬底。封装衬底包含导电引线框架，所述导电引线框架可由铜、铝、不锈钢及合金(例如合金42及铜合金)形成。所述引线框架可包含用于安装半导体裸片的裸片垫，及布置在裸片垫附近用于使用导线接合、带状接合(ribbon bond)或其它导体来耦合到半导体裸片上的接合垫的导电引线。所述引线框架可以条带或阵列提供。裸片可放置在条带或阵列上，所述裸片放置在每一封装式装置的裸片垫上，且裸片附接或裸片粘合剂可用以将所述裸片安装到引线框架裸片垫。导线接合可将半导体裸片上的接合垫耦合到所述引线框架的引线。在导线接合处于适当位置之后，可用例如模制化合物的保护性材料覆盖所述衬底的一部分、所述裸片及所述裸片垫的至少一部分。
替代封装衬底包含用于接纳半导体裸片的预模制引线框架(PMLF)及模制互连件衬底(MIS)。这些衬底可包含例如液晶聚合物(LCP)或模制化合物的电介质且可在所述电介质中包含一或多个导电部分层。引线框架可包含镀覆、冲压及部分蚀刻的引线框架，在部分蚀刻的引线框架中，可通过从金属引线框架的一侧且接着从另一侧蚀刻图案以形成全厚度及部分厚度部分来形成两个金属层级，且在一些区域中，可蚀刻所有金属以形成穿过部分蚀刻引线框架的开口。重复镀覆及图案化可形成通过电介质隔开的多个导体层及通过所述电介质连接所述导体层的导电通路，所述电介质可为模制化合物。封装衬底也可为承载导体的带基及膜基衬底；陶瓷衬底、具有多个导体层及绝缘体层的层压衬底；及陶瓷、玻璃纤维或树脂的印刷电路板衬底，或例如阻燃4(FR4)材料的玻璃强化环氧树脂衬底。
术语“四方扁平无引线”或“QFN”在本文中用于装置封装。QFN封装具有与模制封装本体的侧共同延伸的引线且所述引线位于四侧上。替代扁平无引线封装可在两侧或一侧上具有引线。这些可被称为“小外形无引线”或“SON”封装。无引线封装式电子装置可表面安装到板。带引线封装可与其中引线远离封装本体延伸且经塑形以形成用于焊接到板的一部分的布置一起使用。双列直插式封装或“DIP”可与所述布置一起使用。布置有引线(其从所述封装延伸用于表面安装)的薄DIP封装可被称为小外形集成电路或“SOIC”封装。
本文中使用术语“高压”。如本文中所使用，高压是大于100伏的电压。所述布置可用于其中将数百或数千伏递送到负载的系统中。在一实例中，使用1kVrms信号。此外，即使在其中平均电压小于这些电平的实例中，电压瞬变也必须被认为要大得多。在其中信号或总线上预期有300Vrms电平的实例中，必须处置2500Vrms的瞬变电压，因为当信号从关切换到开时或反之亦然，可能发生那个电压电平的瞬变。被隔离元件之间的电压隔离必须能够处置预期的负载电压及可能发生的瞬变两者。
在所述布置中，包含经配置以热耦合到输入的温度传感器的半导体裸片设置在半导体装置封装中，其中半导体裸片上的温度传感器与输入电隔离，所述输入可处于高压。温度传感器通过使用形成在半导体裸片的半导体衬底的有源表面上方的金属化层中的电隔离低压区来电隔离。封装衬底的裸片垫耦合到可用以感测信号或表面处的温度的第一输入或输入群组。半导体裸片安装到并电耦合到所述裸片垫且热耦合到封装衬底的裸片垫。低压区使用半导体衬底的有源表面上方的金属化系统的电介质层来形成。低压区通过环绕低压区的额外隔离结构与可能处于高压的半导体衬底电隔离。
使用上金属层处的金属化系统的导电材料，在低压区中形成温度传感器。在上金属层中形成耦合到温度传感器的接合垫。对封装衬底的被隔离部分进行与接合垫的电连接，以将输入及输出信号提供给温度传感器。隔离结构包含与温度传感器隔开且环绕温度传感器的导电材料的高压环，高压环通过金属化系统电耦合到半导体衬底。隔离结构使用金属化系统中的金属层处的导电材料且使用金属层之间的经填充导电通路以与最低金属化层与半导体衬底之间的半导体衬底的接触件形成隔离结构而形成。温度传感器可为由上金属化层中的导电材料形成的组件。温度传感器形成在金属化系统的电介质材料内，或在线电介质材料的后端中，例如沉积在半导体裸片上方的钝化层或保护性氧化物层。温度传感器具有随半导体裸片的温度变动的可观察特性。在应用中，温度传感器提供随温度变动且响应于温度变化而变动的信号。在使用中，所述布置的温度传感器与被测量表面上的高压电隔离，同时其也与表面，例如系统板上的总线或信号路径热接触。
图1以投影视图说明可与某些布置一起使用的双列直插式封装(DIP)101。DIP封装101可为比其它DIP封装更薄且在系统板上占用更少空间的小外形集成电路(SOIC)封装，然而其它DIP封装也可与所述布置一起使用。在图1中，DIP封装101具有从通过使用模制化合物形成的本体延伸的八个引线(四个在投影中可见)。用于半导体封装中的模制化合物可与所述布置一起使用，例如热固性环氧树脂模制化合物可用以覆盖半导体裸片、封装衬底的部分(例如引线框架)及引线的部分。用于形成所述封装的模制化合物的工艺被称为“囊封”，尽管使引线的部分及有时裸片垫的部分从模制化合物暴露以形成封装端子或可表面安装表面。
图2以另一投影视图说明可与所述布置一起使用的QFN封装的板侧表面。在图2中，QFN封装201具有由模制化合物形成的本体，及带有暴露表面的裸片垫，以及用于耦合到信号总线、导体、迹线或待感测表面的端子，及与裸片垫隔开、与裸片垫电隔离的端子。QFN封装201可使用焊料及表面安装技术(SMT)来表面安装到系统板。越来越多地使用QFN封装，因为无引线封装需要比带引线封装，例如图1中的DIP 101更小的板面积。所述布置的半导体裸片可封装在DIP装置封装、SOIC装置封装、QFN封装或另一半导体封装类型中。有引线封装或无引线封装可与所述布置一起使用。小外形晶体管(SOT)、DIP、SOIC、QFN封装、小外形封装(SOP)、小外形无引线(SON)封装及四方扁平封装(QFP)封装以及用于半导体装置的其它封装可与所述布置一起使用。
图3A及3B分别说明包含多个半导体裸片的半导体晶片，及在其已在单切工艺中从半导体晶片移除之后的单一半导体裸片。在图3A中，半导体晶片338被展示为具有布置成行及列且通过切割道342(在半导体晶片338定向在图3A中时展示在第一方向上)及340(展示在图3A中的法向于第一方向的第二方向上)彼此隔开的多个半导体裸片310。在使用半导体制造工艺来制造包含温度传感器的半导体裸片310之后，通过使用锯或激光切割工具以沿着切割道340及342将裸片310从晶片338切割开来将晶片338单切成单位裸片。图3B说明例如可用于在所述布置中的单一矩形半导体裸片。可在半导体裸片310上形成温度传感器电路，所述温度传感器电路包含具有随装置温度可预测地变动的特性的至少一个组件，如下文进一步描述。
图4A以平面视图说明具有温度传感器401的半导体裸片310的有源表面。温度传感器401具有温度相依特性且使用用于半导体裸片310的金属化系统的电介质及导体材料来形成。在实例中，金属化系统是铝金属化系统，其中若干铝导体层通过对应电介质材料层，例如二氧化硅或氮氧化硅电介质层彼此隔开。可使用其它电介质材料，例如碳化硅层。在所说明实例中，温度传感器401形成在金属化系统的上层中，且在所说明实例中，传感器401形成在金属化系统的最上层处。在实例中，温度传感器401可为双端子组件。接合垫417、421形成在半导体裸片310的金属化系统中且耦合到双端子温度传感器401的每一端。接合垫417、421提供到温度传感器401的电接口，从而允许连接到温度传感器及从外部装置连接到温度传感器。
实例温度传感器401包含低压环403，所述低压环403是也由金属化系统的上层级中的导体形成的隔离结构。例如，低压环403是环绕双端子装置且可电耦合到低压接地的导体。在替代布置中，可省略低压环403。电隔离结构形成为环绕温度传感器401。电隔离结构通过电介质411与温度传感器401隔开。如下文进一步描述，电隔离结构包含高压环410。在电隔离结构中，高压环410通过形成在半导体裸片的金属化系统中的导电路径耦合到半导体衬底(在图4A的平面视图中不可见，参见图4B)，包含金属化系统的每一层级处的导体材料，且包含延伸穿过电介质层并在导体材料之间进行垂直连接的经填充导电通路。所述经填充通路将形成在金属化系统的各个层级处的导体彼此耦合，且隔离结构进一步包括制成到半导体衬底的接触结构。高压环410环绕温度传感器401。高压环410及电介质材料的布置形成包含与半导体衬底电隔离的温度传感器的低压区，所述半导体衬底在使用时可处于高压。
温度传感器401的导体材料413可形成具有温度相依阻抗的电阻器。替代地，导体材料413可形成具有温度相依介电常数的电容器。温度传感器的替代结构包含电感器或线圈。可使用呈条带、螺旋、圆形、方形或其它二维图案的导体材料413形成电阻器以将接合垫417、421彼此耦合。使用密集图案可增加半导体装置每单位面积的电阻器大小。可使用导体材料413中的两个螺旋或两个其它交错图案来形成电容器，其中所述两个部分平行且通过电介质材料411彼此水平隔开。可使用导体材料413的交错指部或条带。电容器接着具有耦合到接合垫417的第一板及耦合到接合垫421的第二板，以形成双端子电容器装置。RC电路可形成在导体层中，且RC时间常数可用作温度传感器。由于RC组件的阻抗及介电常数随温度变动，因此RC时间常数也将随温度变动。
图4B以横截面视图说明半导体裸片310，其中进一步说明温度传感器401的一些特征。在横截面中，金属化系统425被展示为在标记为4257的上层处具有电介质层411。在实例中，金属化系统425具有通过对应电介质材料层彼此隔开的多个导体层。温度传感器401的导体413位于最上层的导体材料中。低压环403也可由相同的最上层导体材料形成，所述导体材料例如可为铝或铜或其合金。接合垫417、421也由金属化系统的上层4257中的相同材料形成且具有从电介质材料暴露以使能够连接到封装引线的上表面。高压环410被展示为由金属化系统425的上层中的相同导体材料形成。所述高压环可替代地由金属化系统425的另一层形成。
图4C以部分截面图说明半导体裸片310的额外细节。在图4C中，所述横截面包含接合垫421中的一者的一部分，及导体材料413的温度传感器的一部分及低压环403，以及隔离结构409。在图4C中，接合垫421被展示为与导体413隔开，且低压隔离环403也与温度传感器导体413隔开。隔离结构409包含也被展示的高压环410。包含接合垫421、温度传感器导体413、低压环403及高压环410的导电元件被展示为形成在上覆于半导体衬底407的有源表面的金属化系统425的最上金属化层4277中。连续金属化层形成在半导体衬底407的有源表面上方。第一导体层4271形成在第一电介质层4251中且通过延伸穿过电介质层4251的第一通路层4281耦合到下一导体层4272。隔离结构409包含电介质层4251、4252、4253、4254、4255、4256中的每一者的导体及通路的串联堆叠，其中导体层4271、4272、4273、4274、4275、4276通过对应通路层4281、4282、4283、4284、4285及4286垂直耦合。所述通路层延伸穿过并耦合穿过电介质层4251、4252、4253、4254、4255、4256的导体。另外，接触电介质层4250包含通过使用衬底接触件、掺杂区408来与半导体衬底407欧姆接触的接触通路4280。在操作中，半导体衬底407将被放置成与其中待测量温度的区域热接触及电接触，所述区域可处于高压。
在操作中，半导体衬底407将耦合到高压。温度传感器401，包含导体材料413及接合垫421将热耦合到半导体衬底407，同时保持与来自存在于所述半导体衬底上的高压的电场电隔离。电隔离是凭借电介质层及隔离结构409，其将高压耦合到最上金属化层处的高压环410。在这个实例中，铝或铝合金导体(4271、4272…4277)的七层金属化系统用于半导体衬底上方，且连同七个电介质层(4251、4252…4257)一起形成七个金属化层。可使用更多或更少的金属化层。正整数N可用以描述层数，且N是最上层，所述衬底上方的第一金属化层是金属化层1号。在实例布置中，层数的范围是从N＝4到12。可使用除铝以外的导体，例如铜及铜合金。使用经填充通路，例如钨通路或用以在半导体工艺中填充导电通路的其它导体材料，在隔离结构409中垂直耦合铝导体。在双镶嵌铜工艺中，可使用铜或铜合金来形成导体且形成并填充所述通路。
图4C还展示电介质层431中的额外隔离特征，所述电介质层431是最上金属化层下方的氮氧化硅(SON)层，这个层431在高压环410与温度传感器401之间具有开口432。这个开口432通过减少或阻挡裸片表面处的电荷输送来改进性能。
虽然在图中以横截面进行展示，但隔离结构409可在温度传感器401周围是连续的且可形成定位在各种金属化层，例如导体4276(在七个层的实例中是第六层)、4275、4274、4273处的额外环，这些环形成包含温度传感器401的低压区。
图5以俯视图说明展示使用所述布置的电场分布的电场模拟结果。在图5中，温度传感器401被展示在半导体裸片310的中心。高压被施加到半导体衬底(不可见)且耦合到隔离结构409，其中高压环410处于高压。等电场线指示场强。如图5中所展示，所得电场受到约束且形成包含温度传感器401的低压区，温度传感器401由于高压而与电场隔离。因此，温度传感器401不受当电介质暴露于高压时可能发生的电介质击穿效应的影响。虽然温度传感器401热耦合到半导体衬底，但其与半导体衬底电隔离。
图6A到6D以一系列横截面说明用于形成包含所述布置的热传感器的封装式电子装置的选定步骤。在图6A中，横截面视图说明封装衬底603，在这个实例中是引线框架。引线框架可为铜、镀铜、合金42、钢、不锈钢或用于半导体封装中的引线框架的另一材料。第一引线611耦合到经配置以接纳半导体裸片的裸片垫609。第二引线605被展示为与裸片垫609隔开并与裸片垫609或引线611隔离且不接触。
在图6B中，在进一步处理之后以另一横截面展示图6A的封装衬底。半导体裸片310安装在裸片垫609上。导电裸片附接材料601用以将半导体裸片310的背侧表面接合到裸片垫609。有用的裸片附接材料包含裸片附接膜、糊剂及凝胶。在所述实例中展示导电裸片附接膜。半导体裸片310经安装为有源表面背对封装衬底603，在这个实例中是引线框架。温度传感器401被展示为具有从电介质411暴露的接合垫417、421。引线611通过如本文所展示的引线框架材料或通过接合导线或带状接合耦合到裸片垫609。
在图6C中，在进一步处理之后展示图6B的封装衬底。半导体裸片310通过接合导线641、643电耦合到引线(在这个横截面中单一引线605可见)。在处理中，导线接合器工具在延伸穿过毛细管的接合导线的端处形成自由空气球。所述球使用热能、机械能及/或声能来接合到半导体裸片上的接合垫以与接合垫进行球接合，在图6C中球接合例如被展示在接合垫417、421上。随着毛细管工具移动远离球接合，允许接合导线延伸穿过毛细管且形成弧形或弯曲导线形状，毛细管移动到封装衬底上的引线表面或导电地上方的位置，且与所述引线进行针脚接合，这个工艺被称为“球及针脚”接合。在图6C中，两个接合导线641、643被展示为用针脚接合将接合垫417、421耦合到引线。接合导线可为用于半导体封装中的任何接合导线，例如金、铜、镀钯铜、银及铝。通常使用金及镀钯铜(PCC)接合导线，但是在所述布置中可使用其它接合导线类型。替代布置可使用带状接合而不是接合导线以将接合垫417、421耦合到例如封装衬底603的引线605的引线。
图6D以另一横截面视图说明在额外处理之后的图6C的布置。在图6D中，半导体裸片310(包含热传感器401、接合导线641、643及封装衬底603的部分)被覆盖在模制化合物650中。这个囊封步骤可作为块模制操作或单元模制操作来执行，且可使用转移模具。固体模制化合物可被加热为液态且接着在压力下转移到模具中并允许其固化。模制化合物可为用于半导体封装中的任何模制化合物材料，在实例中使用热固性环氧树脂模制化合物。液态树脂或其它环氧树脂材料可用以封装所述装置且形成模制化合物650。
在图6A到6D中所展示的步骤中，展示处理单一裸片310。然而，在生产运行中，可将例如引线框架的封装衬底以具有成行及列的引线框架的条带或阵列的封装衬底提供。可将许多半导体裸片同时安装、导线接合及模制在所述阵列或条带中，以提供生产量及降低产出时间，从而降低成本。在模制之后使用锯来分离模制装置以在单元装置之间的锯道中切穿模制化合物及封装衬底。接着使成品装置经历针对引线的额外测试以及修整及成形操作以完成封装式电子装置。
此外，在实例布置中，展示具有安装在裸片垫上的温度传感器的单一半导体裸片。在额外布置中，裸片垫是第一裸片垫，且额外裸片可设置在第二裸片垫上的同一封装中，与第一裸片垫上的高压隔离。这个额外半导体裸片可为数据分析电路，且可包含模/数转换器(ADC)及经配置以从经过温度传感器的模拟信号计算或导出温度的数字处理电路。以这种方式，可在单一封装式半导体装置中提供完整的温度传感器解决方案。
图7以投影视图说明被展示为在具有热传感器401及半导体裸片310的应用中的封装式装置。引线611耦合到裸片垫609且放置在其中将要测量温度的总线710上。总线710可为系统板上的导电迹线，其承载高压，例如大于100伏、大于约1千伏及高达几千伏的电压。半导体裸片310上的温度传感器401通过接合导线641、643耦合到引线605。温度传感器401可耦合到用于测量电流、电压或电流或电压变化的外部电路，且可使用存储在外部装置中，例如在非易失性查找表中的校准测量来确定温度传感器401的温度。总线710的温度也可通过校准来确定或可被估计为等于与总线710热接触的温度传感器401的温度。使用实验，可确定偏移量以使所测量温度更准确，所述偏移量可存储在外部装置中。
图8以横截面视图说明四方扁平无引线封装中的替代封装式装置801。封装衬底803用以将半导体裸片310安装在裸片垫上。封装衬底803具有形成引线811及引线805的被暴露部分。接合导线641、643将温度传感器401的接合垫417、421耦合到引线805。模制化合物650覆盖半导体裸片310、接合导线、温度传感器401及封装衬底803的部分，而所述引线具有从模制化合物650暴露的部分。例如，因为在与图7的带引线封装相比时，安装这些封装所需的板面积减小，所以越来越多地使用无引线封装。
图9以流程图说明用于形成温度传感器的方法。在步骤901处，将包含形成在上金属化层中的温度传感器的半导体裸片安装到封装衬底的裸片垫。温度传感器与封装衬底电隔离，但热耦合到封装衬底(参见图6A到6B)。在步骤903处，将温度传感器电连接到封装衬底的与裸片垫隔离的引线(参见图6C)。在步骤905处，用模制化合物覆盖半导体裸片、电连接、裸片垫及引线的一部分以及封装衬底的一部分以形成封装式温度传感器装置(参见图6D)。在操作中，可在高压下将温度传感器装置耦合到导体或表面，而不会将半导体裸片上的温度传感器暴露于高压(参见图7)。所述布置的使用提供高压兼容温度传感器，而没有因与高压相关联的电场而致电介质击穿的风险。
在所描述布置中修改是可能的，且在权利要求书的范围内其它替代布置是可能的。

Claims (21)

1.一种设备，其包括：
封装衬底，其包括经配置用于安装半导体裸片的裸片垫、连接到所述裸片垫的第一引线以及与所述第一引线及所述裸片垫隔开并隔离的第二引线及第三引线；
半导体裸片，其包含安装在所述裸片垫上的温度传感器，其包括：
半导体衬底，其具有导电地安装到所述裸片垫的背侧表面且具有与所述背侧表面相对的有源表面；
连续金属化层，其堆叠在所述半导体裸片的所述有源表面上方，第一金属化层是最接近所述有源表面的金属化层，且所述连续金属化层上覆于前一金属化层，最上金属化层距所述有源表面最远，所述连续金属化层包括用于特定金属化层的电介质材料中的相应导体层，且包含从所述相应导体层延伸穿过所述电介质材料到邻近金属化层的导电通路；
所述温度传感器，其由所述最上金属化层中的所述相应导体层形成；及
高压环，其由所述最上金属化层中的所述相应导体层形成，所述高压环与所述温度传感器隔开且环绕所述温度传感器；
接合垫，其由所述最上金属化层中的所述导体层形成，经配置用于进行电连接；及
电连接，其将所述接合垫耦合到所述第二引线及所述第三引线。
2.根据权利要求1所述的设备，且进一步包括：
隔离结构，其包含所述高压环，所述高压环包括所述最上金属化层与所述第一金属化层之间的所述连续金属化层中的每一者的所述相应导体层的一部分，所述隔离结构的所述导体层通过导电通路耦合到所述导体层中的邻近者，且所述第一金属化层的导体层通过接触通路及接触件进一步耦合到所述半导体衬底的所述有源表面。
3.根据权利要求1所述的设备，且进一步包括：
低压环，其由所述最上金属化层中的所述相应导体层形成且环绕所述温度传感器，所述低压环放置在所述温度传感器与所述高压环之间。
4.根据权利要求1所述的设备，其中所述金属化层是在N个连续金属化层中，其中第N层是最上层，其中N是在从4到12范围内的正整数。
5.根据权利要求1所述的设备，其中所述温度传感器进一步包括阻抗。
6.根据权利要求5所述的设备，其中所述阻抗进一步包括所述最上金属化层中的所述相应导体层的布置成螺旋形状且具有两端的连续部分。
7.根据权利要求5所述的设备，其中所述阻抗进一步包括所述最上金属化层中的所述导体层的具有两端的连续部分。
8.根据权利要求5所述的设备，其中所述温度传感器进一步包括电容。
9.根据权利要求8所述的设备，其中所述电容由所述最上金属化层中的相应导体的两个部分形成，所述两个部分通过所述最上金属化层的电介质隔开布置为在其之间具有均匀间隔距离。
10.根据权利要求9所述的设备，其中所述电容由所述最上金属化层中的所述导体的两个螺旋部分形成。
11.根据权利要求9所述的设备，且进一步包括由所述金属化层的最上层级中的导体形成且耦合到所述电容的所述两个部分中的第一者的第一接合垫，及由所述金属化层的所述最上层级中的所述导体形成且耦合到所述电容的所述两个部分中的第二者的第二接合垫。
12.根据权利要求1所述的设备，且进一步包括形成在所述金属化层的最上层与所述金属化层的下伏层之间的氮氧化硅层，且在所述温度传感器与所述高压环之间的所述氮氧化硅层中具有横向开口。
13.根据权利要求1所述的设备，其中所述封装衬底包含耦合到所述裸片垫的引线，且耦合到所述裸片垫的所述引线经配置以放置成与系统板上的高压信号接触。
14.根据权利要求1所述的设备，其中所述温度传感器经配置以感测所述半导体衬底的温度，同时通过所述连续金属化层中的所述电介质材料与所述半导体衬底电隔离。
15.根据权利要求1所述的设备，其中所述接合垫进一步包括由所述最上金属化层中的所述相应导体形成的第一接合垫及第二接合垫，所述第一及第二接合垫电连接到所述封装衬底上的所述第二及第三引线，所述第二及第三引线提供经配置用于将所述温度传感器耦合到外部装置的端子。
16.一种方法，其包括：
将包含温度传感器的半导体裸片安装到封装衬底的裸片垫，所述温度传感器形成在所述半导体裸片的有源表面上方形成的连续金属化层中的最上者的导体层中，所述连续金属化层包含电介质材料中的相应导体层且包含耦合到所述相应导体层并延伸穿过所述电介质材料到邻近金属化层中的相应导体层的导电通路，所述裸片垫电连接到所述封装衬底的第一引线；
将所述温度传感器耦合到接合垫，所述接合垫分别电连接到所述封装衬底的第二引线及第三引线，所述第二引线及第三引线彼此隔开并隔离且与所述裸片垫及所述第一引线隔开并隔离；
将所述第一引线放置成与高压迹线电及热接触；及
使用所述第二引线及所述第三引线，监测所述温度传感器的物理特性以确定温度。
17.根据权利要求16所述的方法，且进一步包括监测通过所述温度传感器的电流。
18.根据权利要求16所述的方法，且进一步包括监测通过所述温度传感器的电压。
19.根据权利要求16所述的方法，其中所述温度传感器包括由所述最上金属化层的所述相应导体层形成的阻抗。
20.根据权利要求16所述的方法，其中所述温度传感器包括由所述最上金属化层的所述相应导体层形成的电容。
21.一种封装式温度传感器装置，其包括：
金属引线框架，其具有连接到第一引线的裸片垫；
所述金属引线框架的第二引线及第三引线，其与所述裸片垫及所述第一引线隔开且与所述裸片垫隔离；
半导体裸片，其安装到所述裸片垫，包含温度传感器，所述半导体裸片包括：
半导体衬底，其具有导电地安装到所述裸片垫的背侧表面且具有与所述背侧表面相对的有源表面；
连续金属化层，其堆叠在所述半导体裸片的所述有源表面上方，第一金属化层最接近所述有源表面，且每一连续金属化层上覆于前一金属化层，最上金属化层是距所述有源表面最远的金属化层，所述金属化层包括电介质材料中的相应导体层，且包含从所述相应导体层延伸到邻近金属化层中的相应导体层的导电通路；所述温度传感器，其由所述最上金属化层中的所述相应导体层形成，且高压环由所述最上金属化层中的所述相应导体层形成，所述高压环与所述温度传感器隔开且环绕所述温度传感器；及
接合垫，其形成在所述最上金属化层中，所述接合垫经配置用于进行电连接；
电连接，其包括将所述第二引线及第三引线连接到所述半导体裸片上的所述接合垫的接合导线；及
模制化合物，其覆盖所述半导体裸片、所述接合导线以及所述第二引线及所述第三引线的部分，而所述第二引线及所述第三引线的额外部分从所述模制化合物暴露，从而形成所述封装式温度传感器装置的端子。
CN202210867183.1A 2021-07-31 2022-07-22 隔离式温度传感器装置 Pending CN115692336A (zh)

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