CN115692194A - Method for manufacturing semiconductor structure - Google Patents
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- CN115692194A CN115692194A CN202211621183.XA CN202211621183A CN115692194A CN 115692194 A CN115692194 A CN 115692194A CN 202211621183 A CN202211621183 A CN 202211621183A CN 115692194 A CN115692194 A CN 115692194A
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Abstract
The application relates to a preparation method of a semiconductor structure, which comprises the following steps: providing a substrate, and forming a metal layer on the substrate; forming a photoresist layer on the metal layer; exposing and developing the photoresist layer to form a groove in the photoresist layer; etching the photoresist layer with the groove, removing the photoresist at the bottom of the groove, and forming a patterned photoresist, wherein the patterned photoresist is provided with an opening, and the opening exposes the metal layer; and etching the metal layer based on the patterned photoresist to form a metal pad. A groove is formed in the photoresist layer, so that photoresist at the bottom of the groove is reserved, and at the moment, the reserved photoresist can effectively protect the metal layer from reacting with a developing solution, and further protect the metal pad from generating impurity residues. Therefore, the semiconductor structure in the embodiment can improve the response time of the photodiode, thereby improving the yield of the image sensor process and improving the performance of the device.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to a method for manufacturing a semiconductor structure.
Background
In semiconductor structures, such as image sensors, connections to external circuitry are typically made through metal pads, such as aluminum pads. The metal pad is generally manufactured by the following process: firstly, forming a metal layer and forming a photoresist layer on the metal layer; then, exposing and developing the photoresist layer to form a patterned photoresist layer; and finally, etching the metal layer to form a metal pad based on the patterned photoresist layer.
However, during the developing process, the metal layer reacts with the developing solution to generate impurity residues, and the impurity residues affect the performance of the device.
Disclosure of Invention
In view of the above, it is necessary to provide a method for fabricating a semiconductor structure, which can solve the problem of impurity residue generated by the reaction between the metal layer and the developing solution in the conventional technology.
In order to achieve the above object, the present application provides a method for manufacturing a semiconductor structure, comprising the steps of:
providing a substrate, and forming a metal layer on the substrate;
forming a photoresist layer on the metal layer;
exposing and developing the photoresist layer to form a groove in the photoresist layer;
etching the photoresist layer with the groove, removing the photoresist at the bottom of the groove, and forming a patterned photoresist, wherein the patterned photoresist is provided with an opening, and the opening exposes the metal layer;
and etching the metal layer based on the patterned photoresist to form a metal pad.
According to the preparation method of the semiconductor structure, the groove is formed in the photoresist layer, so that the photoresist at the bottom of the groove is reserved, and at the moment, the reserved photoresist can effectively protect the metal layer from reacting with the developing solution, and further protect the metal pad from generating impurity residues. Therefore, the semiconductor structure in the embodiment can improve the response time of the photodiode, thereby improving the yield of the image sensor process and improving the performance of the device.
In one embodiment, exposing and developing the photoresist layer to form a groove in the photoresist layer includes:
determining the position of an exposure focus in the photoresist layer;
and exposing and developing the photoresist layer based on the exposure focus to form a groove in the photoresist layer.
In one embodiment, the photoresist layer has a thickness of a μm, and the exposure focus is located at a distance of a/3 ± 0.5 μm from the upper surface of the photoresist layer.
In one embodiment, the photoresist layer includes a first photoresist layer and a second photoresist layer, and the step of forming the photoresist layer on the metal layer includes the steps of:
forming a second photoresist layer on the metal layer;
and forming a first photoresist layer on the second photoresist layer.
In one embodiment, exposing and developing the photoresist layer to form a groove in the photoresist layer further includes:
and exposing and developing the first photoresist layer to form a first patterned photoresist layer, wherein the first patterned photoresist layer is provided with an opening, and the second photoresist layer is exposed through the opening.
In one embodiment, the first photoresist layer and the second photoresist layer both use positive photoresist, and the exposure energy threshold of the first photoresist layer is smaller than that of the second photoresist layer.
In one embodiment, the first photoresist layer is a positive photoresist and the second photoresist layer is a negative photoresist.
In one embodiment, the depth of the groove is greater than a threshold thickness, and the threshold thickness is the minimum thickness of the patterned photoresist as the etching barrier layer.
In one embodiment, the bottom angle of the groove is 90 ° -95 °.
In one embodiment, the metal pad comprises an aluminum pad.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method of fabricating a semiconductor structure provided in one embodiment;
fig. 2 is a schematic cross-sectional structure view of a structure obtained in step S10 of the method for manufacturing a semiconductor structure provided in one embodiment;
fig. 3 is a schematic cross-sectional structure diagram of a structure obtained in step S30 of the method for manufacturing a semiconductor structure provided in one embodiment;
fig. 4 is a schematic cross-sectional structure view of a structure obtained in step S40 of the method for manufacturing a semiconductor structure provided in one embodiment;
fig. 5 is a schematic cross-sectional structure view of a structure obtained in step S50 of the method for manufacturing a semiconductor structure provided in one embodiment;
fig. 6 is a schematic cross-sectional structure diagram of a structure obtained in step S21 of the method for manufacturing a semiconductor structure provided in another embodiment;
fig. 7 is a schematic cross-sectional structure diagram of a structure obtained in step S30 of the method for manufacturing a semiconductor structure provided in another embodiment;
fig. 8 is a schematic cross-sectional structure view of a structure obtained in step S40 of the method for manufacturing a semiconductor structure provided in another embodiment;
fig. 9 is a schematic cross-sectional structure diagram of a structure obtained in step S50 of the method for manufacturing a semiconductor structure provided in another embodiment.
Description of reference numerals: 10-substrate, 21-metal layer, 22-metal pad, 31-photoresist layer, 311-first photoresist layer, 312-second photoresist layer, 32-patterned photoresist layer, 321-first patterned photoresist layer, 322-second patterned photoresist layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention, such that variations from the shapes shown are to be expected, for example, due to manufacturing techniques and/or tolerances. Thus, embodiments of the present invention should not be limited to the particular shapes of regions illustrated herein, but are to include deviations in shapes that result, for example, from manufacturing techniques.
In one embodiment, referring to fig. 1, a method for fabricating a semiconductor structure is provided. The semiconductor structure may include, but is not limited to, an image sensor structure.
The method comprises the following steps:
step S10, providing a substrate 10, and forming a metal layer 21 on the substrate 10;
step S20, forming a photoresist layer 31 on the metal layer 21;
step S30, exposing and developing the photoresist layer 31 to form a groove in the photoresist layer 31;
step S40, etching the photoresist layer 31 with the groove, removing the photoresist at the bottom of the groove, and forming a patterned photoresist, wherein the patterned photoresist is provided with an opening, and the opening exposes the metal layer 21;
in step S50, the metal layer 21 is etched based on the patterned photoresist to form the metal pad 22.
In step S10, referring to fig. 2, the base 10 may include a substrate or a substrate and a plurality of functional layers formed on the substrate, and the substrate may be made of a semiconductor material. For example, the substrate may be a silicon substrate, a sapphire substrate, a gallium arsenide substrate, a gallium nitride substrate, or the like. The metal layer 21 is formed on the substrate 10 and covers the surface of the substrate 10, and the material of the metal layer 21 may include, but is not limited to, aluminum.
In step S20, a photoresist is coated on the metal layer 21 to form a photoresist layer 31. The photoresist may include a positive photoresist, and may also include both a positive photoresist and a negative photoresist. During exposure, the molecular chain of the exposed area of the positive photoresist is changed from long chain to short chain, and the molecular chain of the exposed area of the negative photoresist is changed from short chain to long chain. During development, the exposed regions of a positive photoresist react with the developer and are removed, while the exposed regions of a negative photoresist do not react with the developer and are retained, since the short chain molecules are soluble in the developer and the long chain molecules are insoluble in the developer.
In step S30, referring to fig. 3, the photoresist layer 31 is exposed and developed, and a groove is formed in the photoresist layer 31.
As an example, referring to fig. 3 or 7, the bottom angle α of the groove may be 90 ° -95 °. Of course, the bottom angle of the groove may be other degrees, and is not limited herein.
In step S40, referring to fig. 4, as an example, the photoresist layer 31 with the groove may be dry etched, so that controllability of the dry etching is better, and the photoresist at the bottom of the groove may be removed more accurately.
And etching the photoresist at the bottom of the groove based on the groove and forming the patterned photoresist, wherein the shape of the groove can influence the shape of the opening of the patterned photoresist. The bottom angle β of the opening is close to the bottom angle of the groove, and may be, for example, 90 ° to 95 °.
In step S50, referring to fig. 5, the metal pad 22 is obtained by etching the metal layer 21.
When the metal layer 21 includes an aluminum layer, the metal pad 22 includes an aluminum pad.
The shape of the metal pad 22 is affected by the shape of the patterned photoresist.
When the bottom angle beta degree of the patterned photoresist opening is 90-95 degrees, the bottom angle gamma degree of the metal pad 22 can be 85-90 degrees, and the shape of the metal pad 22 is closer to a rectangle, so that better metal pad 22 appearance can be provided for subsequent steps.
In the embodiment, the formation of the groove in the photoresist layer 31 enables the photoresist at the bottom of the groove to be retained, and at this time, the retained photoresist can effectively protect the metal layer 21 from reacting with the developing solution, thereby protecting the metal pad 22 from generating impurity residues. Therefore, the semiconductor structure in the embodiment can improve the response time of the photodiode, thereby improving the yield of the image sensor process and improving the performance of the device.
In one embodiment, step S30 includes the steps of:
step S31, determining the position of the exposure focus within the photoresist layer 31;
step S32, based on the exposure focus, exposing and developing the photoresist layer 31 to form a groove in the photoresist layer 31.
In step S31, the exposure focus is the maximum point of the exposure light intensity in the photoresist layer 31, and the light intensity at both sides of the focus decreases sequentially.
As an example, let the thickness of the photoresist be a μm, and the position of the exposure focus be selected within the photoresist at a/3 + -0.5 μm from the upper surface of the photoresist. The distance between the exposure focus and the upper surface of the photoresist layer 31 is smaller than the distance between the exposure focus and the lower surface of the photoresist layer 31.
Specifically, for example, when a is 6, the photoresist is 6 μm thick, and the exposure focus may be selected to be between 1.5 μm and 2.5 μm from the upper surface of the photoresist.
In step S32, the photoresist layer 31 is exposed based on the exposure focus, where the light intensity is strongest and the light intensities at two sides of the exposure focus are sequentially decreased. The distance between the exposure focus and the upper surface of the photoresist layer 31 is small, the photoresist above the exposure focus can be completely dissolved in the developing solution during the developing process, while only the portion of the photoresist below the exposure focus close to the focus is dissolved in the developing solution, and the portion far from the focus and in contact with the metal layer 21 is not dissolved in the developing solution, thereby forming the groove.
Specifically, after the development, a baking step may be performed, and after the baking step, the metal layer 21 is not exposed at the bottom of the groove.
In the embodiment, the selection of the exposure focus can accurately form a groove structure in the photoresist layer, the metal layer 21 is not exposed by the groove structure, and the metal layer 21 is not in contact with the developing solution, so that no impurity residue is generated.
In one embodiment, referring to fig. 6, the photoresist layer 31 includes a first photoresist layer 311 and a second photoresist layer 312, and the step S20 includes the following steps:
step S21, forming a second photoresist layer 312 on the metal layer 21;
in step S22, a first photoresist layer 311 is formed on the second photoresist layer 312.
In step S21, referring to fig. 6, a layer of photoresist is coated on the metal layer 21 as a second photoresist layer 312.
In step S22, another layer of photoresist is coated on the second photoresist layer 312 as a first photoresist layer 311.
As an example, both the first photoresist layer 311 and the second photoresist layer 312 may employ a positive photoresist. The exposed portion of the positive photoresist reacts with the developer and is removed after the development is completed.
The exposure energy threshold of the first photoresist layer 311 is smaller than that of the second photoresist layer 312.
The exposure energy threshold is the minimum energy at which the photoresist reacts to form a species that is soluble in the developer solution. For example, the exposure energy threshold may be the minimum energy for the photoresist to be exposed, wherein molecular chains between the phenolic resin and the photo acid inhibitor (PAC) are broken to form the phenolic resin dissolved in the alkaline developer.
In this example, by setting the appropriate exposure energy, the first photoresist layer 311 can react with the developing solution more easily during the developing process and the second photoresist layer 312 can not react with the developing solution easily after exposure, which can provide a basis for the formation of the subsequent groove.
As yet another example, the first photoresist layer 311 may be provided using a positive photoresist and the second photoresist layer 312 using a negative photoresist.
At this time, during the exposure and development of the photoresist layer 31, in the exposed region, the molecular chain of the positive photoresist becomes short and reacts with the developing solution and can be removed, however, the molecular chain of the negative photoresist becomes long and cannot be dissolved in the developing solution and can be retained. In the unexposed region, the positive photoresist is not reacted with the developing solution and is retained, and the negative photoresist is not reacted with the developing solution under the positive photoresist and is also retained in the developing process.
In this example, the first photoresist layer 311 and the second photoresist layer 312 are made of photoresist with different exposure properties, and the photoresist is not completely removed, so that the metal layer 21 is prevented from contacting and reacting with a developing solution, and a basis is provided for forming a subsequent groove.
In one embodiment, referring to fig. 7, step S30 further includes the following steps:
the first photoresist layer 311 is exposed and developed to form a first patterned photoresist having an opening exposing the second photoresist layer 312.
Specifically, for example, when the first photoresist layer 311 and the second photoresist layer 312 both adopt positive photoresists, since the exposure energy threshold of the first photoresist layer 311 is smaller than the exposure energy threshold of the second photoresist layer 312, the exposure energy may be selected to be larger than the exposure energy threshold of the first photoresist layer 311 and smaller than the exposure energy threshold of the second photoresist layer 312, so that the first photoresist layer 311 reacts with the developing solution to form an opening, and the opening exposes the second photoresist layer 312, thereby forming the groove structure.
For another example, when the first photoresist layer 311 is a positive photoresist and the second photoresist layer 312 is a negative photoresist, a certain exposure intensity is selected to expose both the positive photoresist and the negative photoresist, so that the positive photoresist of the first photoresist layer 311 forms an opening, and meanwhile, the molecular chain of the negative photoresist of the second photoresist layer 312 changes from a short chain to a long chain, does not react with the developing solution, and is retained, thereby forming a groove structure.
The first photoresist layer 311 is completely removed by exposure and development without damaging the second photoresist layer 312, and at this time, the depth of the groove in the photoresist layer 31 is the same as the thickness of the first photoresist layer 311. In other embodiments, the depth of the groove may not be the same as the thickness of the first photoresist layer 311, which is not limited. Specifically, the depth of the groove may be greater than the thickness of the first photoresist layer 311, that is, the second photoresist layer 312 is also partially exposed and developed. Alternatively, the depth of the groove may also be less than the thickness of the first photoresist layer 311, i.e., the groove is formed in the first photoresist layer 311.
Referring to fig. 8 and 9, after the first photoresist layer 311 is exposed and developed to form the first patterned photoresist, the second photoresist layer 312 is further etched based on the first patterned photoresist layer 321 to form a second patterned photoresist layer 322, and then the metal layer 21 is continuously etched to form the metal pad 22.
In the present embodiment, the first photoresist layer 311 is exposed and developed to form an opening, the opening exposes the second photoresist layer 312, and the two photoresist layers 31 are provided to facilitate the control of the depth of the groove.
In one embodiment, the depth of the recess is greater than a threshold thickness, which is the minimum thickness of the patterned photoresist as an etch stop layer. Referring to fig. 3 and 7, if the depth of the groove is set as d, d is greater than the threshold thickness.
When the photoresist layer 31 with the groove is etched, the photoresist at the bottom of the groove in the photoresist layer 31 is etched, and meanwhile, the photoresist at two sides of the opening of the groove in the photoresist layer 31 is also etched to a certain thickness, which is approximately equal to the thickness of the photoresist at the bottom of the groove. After the patterned photoresist is obtained, the thickness of the patterned photoresist is consistent with the depth of the groove formed in the photoresist layer 31. Thereafter, when the metal layer 21 is etched, the patterned photoresist layer metal layer 21 may function as an etch stop to prevent the metal layer 21 from being etched away.
Specifically, referring to fig. 7, the photoresist layer 31 includes a first photoresist layer 311 and a second photoresist layer 312. When the depth of the groove is equal to the thickness of the first photoresist layer 311, the thickness of the photoresist at the bottom of the groove is equal to the thickness of the second layer of photoresist. At this time, the thickness of the patterned photoresist is the same as that of the first photoresist layer, and in order to ensure that the patterned photoresist plays a role of etching stop, the thickness of the first photoresist layer 311 may be set to be larger, and the thickness of the second photoresist layer 312 may not be too large compared to that of the first photoresist layer 311.
In this embodiment, the depth of the groove is greater than the threshold thickness, so that the thickness of the patterned photoresist is greater than the threshold thickness, thereby protecting the metal layer during the etching process.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a part of the steps in fig. 1 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or stages is not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a part of the steps or stages in other steps.
In the description herein, references to "some embodiments," "other embodiments," "desired embodiments," or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic depictions of the above terms do not necessarily refer to the same embodiment or example.
All the possible combinations of the technical features of the embodiments described above may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for manufacturing a semiconductor structure, comprising the steps of:
providing a substrate, and forming a metal layer on the substrate;
forming a photoresist layer on the metal layer;
exposing and developing the photoresist layer to form a groove in the photoresist layer;
etching the photoresist layer with the groove, removing the photoresist at the bottom of the groove, and forming a patterned photoresist, wherein the patterned photoresist is provided with an opening, and the opening exposes the metal layer;
and etching the metal layer based on the patterned photoresist to form a metal pad.
2. The method of claim 1, wherein the exposing and developing the photoresist layer to form a recess in the photoresist layer comprises:
determining the position of an exposure focus in the photoresist layer;
and exposing and developing the photoresist layer based on the exposure focus to form a groove in the photoresist layer.
3. The method as claimed in claim 2, wherein the photoresist layer has a thickness of a μm, and the exposure focus is located at a distance of a/3 ± 0.5 μm from the upper surface of the photoresist layer.
4. The method of claim 1, wherein the photoresist layer comprises a first photoresist layer and a second photoresist layer, and forming the photoresist layer on the metal layer comprises:
forming a second photoresist layer on the metal layer;
and forming a first photoresist layer on the second photoresist layer.
5. The method as claimed in claim 4, wherein the photoresist layer is exposed and developed to form a recess in the photoresist layer, further comprising the steps of:
and exposing and developing the first photoresist layer to form a first patterned photoresist layer, wherein the first patterned photoresist layer is provided with an opening, and the second photoresist layer is exposed through the opening.
6. The method as claimed in claim 4, wherein the first and second photoresist layers are both made of positive photoresist, and the exposure energy threshold of the first photoresist layer is smaller than that of the second photoresist layer.
7. The method as claimed in claim 4, wherein the first photoresist layer is a positive photoresist and the second photoresist layer is a negative photoresist.
8. The method of claim 1, wherein the depth of the recess is greater than a threshold thickness, the threshold thickness being a minimum thickness of the patterned photoresist as an etch stop layer.
9. The method of claim 1, wherein the bottom angle of the recess is 90 ° -95 °.
10. The method of claim 1, wherein the metal pad comprises an aluminum pad.
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