CN115679442A - Ultrafast laser auxiliary system for molecular beam epitaxy and molecular beam epitaxy method - Google Patents
Ultrafast laser auxiliary system for molecular beam epitaxy and molecular beam epitaxy method Download PDFInfo
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- CN115679442A CN115679442A CN202211300817.1A CN202211300817A CN115679442A CN 115679442 A CN115679442 A CN 115679442A CN 202211300817 A CN202211300817 A CN 202211300817A CN 115679442 A CN115679442 A CN 115679442A
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Abstract
The invention provides an ultrafast laser auxiliary system for molecular beam epitaxy, which comprises: ultrafast laser to and optical path system, wherein, optical path system includes first speculum, femto second/picosecond speculum, second mirror, the light that ultrafast laser sent passes through in proper order first speculum femto second speculum with the reflection of second mirror forms ultrafast laser all the way and assembles to silicon-based substrate at least, heats regulation and control to silicon-based substrate. The invention combines a femtosecond/picosecond ultrafast laser system with a molecular beam epitaxy system, achieves the regulation and control of the generation, the movement and the annihilation of interface dislocation and a reverse domain in the epitaxy process through the integration of an ultrafast laser light path and the molecular beam epitaxy system, and provides a brand new technical means for realizing the integration of the high-performance silicon-based heterogeneous thirty-five semiconductor material and device.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to an ultrafast laser auxiliary system for molecular beam epitaxy and a molecular beam epitaxy method.
Background
The wide application prospect of the silicon-based photoelectron integration technology generates urgent demands on monolithic heterogeneous integration active semiconductor materials and devices, the silicon-based heteroepitaxy technology is subjected to bottleneck for a long time due to the difference of physical properties between III-V group semiconductors and IV group semiconductors, the development of silicon-based multifunctional photoelectron integration is limited, new ideas and methods are urgently needed to provide more adjustment freedom for the silicon-based heteroepitaxy technology, and the advantages of different types of semiconductor materials in realizing functional integration on a chip scale are fully exerted.
The silicon-on-hetero-epitaxial high-quality III-V semiconductor material and device are key technologies for determining whether the silicon-based photoelectron integration technology can be widely applied to the fields of on-chip optical communication, photon calculation, integrated optical sensing and the like, and have urgent requirements and important research significance. At present, some progress is made on the aspect of improving the quality of epitaxial materials through buffer layer design, selective epitaxy of a pattern substrate and the like, but the distance is still far from practical use, and the main reason is that effective regulation and control of a silicon/III-V group interface relaxation process and mismatch dislocation in an epitaxial process are lacked.
Although silicon-based heteroepitaxial III-V materials face severe technical challenges, and due to their great potential advantages, the field has been studied more deeply and made important progress in recent years, but it is increasingly difficult to design various epitaxial buffer layers and thermal annealing methods to suppress dislocations to improve the crystal quality of Si-based epitaxial III-V materials.
In recent years, international great progress is mainly made in the aspect of selective epitaxy of a patterned substrate, the core idea is to limit defects to a bottom layer and a device functional region to a defect-free region by limiting an epitaxial region, but the main difficult problems still faced by selective epitaxy of the patterned substrate are as follows:
(1) The patterned substrate is prepared by utilizing a micro-nano processing technology, so that the whole epitaxial process flow and epitaxial parameter control are more complicated, the material characterization difficulty is high, the consistency and the uniformity are reduced, the efficiency is low, and the cost is higher;
(2) The substrate is polluted and damaged in the graphical processing process, and the sample is transferred between the growth equipment and the micro-nano processing platform to further oxidize and pollute the material;
(3) The epitaxial material structure is difficult to match with the design requirements of microelectronic devices or optoelectronic devices, and the application range is limited.
Considering that the crystal quality of the silicon-based III-V material essentially depends on the control of the initial epitaxial defect of the Si/III-V interface, how to regulate the generation of the mismatch defect and the evolution process of the epitaxial growth in the epitaxial growth process of the material are the core and the key.
Disclosure of Invention
In order to solve the technical problems of the prior art that the generation of mismatch defects and the evolution process of epitaxial growth are regulated and controlled in the epitaxial growth process of a silicon-based substrate material, one object of the present invention is to provide an ultrafast laser assist system for molecular beam epitaxy, the system comprising:
an ultrafast laser, and an optical path system, wherein,
the optical path system comprises a first reflector, a femtosecond/picosecond reflector and a second reflector,
the light emitted by the ultrafast laser sequentially passes through the first reflector, the femtosecond/picosecond reflector and the second reflector for reflection, at least one path of ultrafast laser is formed and converged to the silicon-based substrate, and the silicon-based substrate is heated and regulated.
In a preferred embodiment, the light emitted by the ultrafast laser is reflected to the first beam splitter via the first mirror, the femtosecond/picosecond mirror and the second mirror in sequence;
the first spectroscope divides light into a first light path and a second light path, the first light path is reflected to a second spectroscope through a third reflector, and the second spectroscope divides the first light path into a third light path and a fourth light path;
and the third light path is reflected by a fourth reflector and then converged to the silicon-based substrate.
In a preferred embodiment, the fourth optical path is reflected by a fifth mirror and then converged to the silicon-based substrate.
In a preferred embodiment, the second optical path is reflected via a sixth mirror to a third beam splitter, which splits the second optical path into a fifth optical path and a sixth optical path;
and the fifth light path is reflected by a seventh reflector and then converged to the silicon-based substrate.
In a preferred embodiment, the sixth optical path is reflected by the eighth mirror and then converged to the silicon-based substrate.
Another object of the present invention is to provide a method of ultrafast laser assisted molecular beam epitaxy, said method comprising the method steps of:
epitaxially growing a layer of Si or Si/Ge buffer layer on the Si substrate to form a silicon-based substrate;
and heating and regulating the silicon-based substrate by an ultrafast laser-assisted molecular beam epitaxy system.
In a preferred embodiment, the heating regulation of the silicon-based substrate comprises: the substrate temperature, the beam flow ratio, the growth speed and the ultrafast laser turn-on time are adjusted by molecular beam epitaxy equipment.
In a preferred embodiment, the heating control of the silicon-based substrate further comprises: and (4) regulating and controlling parameters of power, wavelength, pulse width and pulse number of the ultrafast laser.
The invention provides an ultrafast laser auxiliary system for molecular beam epitaxy and a molecular beam epitaxy method, which realize the special field of semiconductor material growth and the controllable growth of low-dimensional structure materials or the heteroepitaxial growth of semiconductor thin film materials under the condition of large mismatch by modifying the conventional semiconductor molecular beam epitaxy system equipment.
The invention provides an ultrafast laser auxiliary system for molecular beam epitaxy and a molecular beam epitaxy method, wherein a femtosecond/picosecond ultrafast laser system is combined with a molecular beam epitaxy system, intervention and regulation of atomic adsorption, migration, diffusion and stress relaxation in heterogeneous epitaxy are carried out by ultrafast laser effect through regulation and control of interface performance of a silicon-based III-V group semiconductor heterogeneous epitaxy process assisted by ultrafast laser and integration of an ultrafast laser optical path and the molecular beam epitaxy system, and the regulated parameters comprise power, wavelength, pulse width, pulse number and the like of ultrafast laser, so that regulation and control of generation, movement and annihilation of interface dislocation and reverse domains in the epitaxy process are achieved, and a brand new technical means is provided for realizing high-performance silicon-based heterogeneous integration III-V semiconductor materials and devices.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 schematically shows a structural diagram of an ultrafast laser assisted system for molecular beam epitaxy in an embodiment of the present invention.
Fig. 2 shows a block flow diagram of a method for ultrafast laser assisted molecular beam epitaxy in an embodiment of the present invention.
Detailed Description
In order to make the above and other features and advantages of the present invention more apparent, the present invention is further described below with reference to the accompanying drawings. It is understood that the specific embodiments described herein are for purposes of illustration only and are not intended to be limiting, as those of ordinary skill in the art will recognize.
In order to solve the technical problem of regulating the generation of mismatch defects and the evolution process of epitaxial growth in the epitaxial growth process of a silicon-based substrate material in the prior art, a beam epitaxy ultrafast laser assist system is provided, as shown in fig. 1, a schematic structural diagram of a beam epitaxy ultrafast laser assist system in an embodiment of the present invention is shown, and according to an embodiment of the present invention, a beam epitaxy ultrafast laser assist system includes: an ultrafast laser 100 (a femtosecond laser or a picosecond laser), and an optical path system.
The optical path system comprises a first reflector 202, a femtosecond/picosecond reflector 203 and a second reflector 204, light emitted by the ultrafast laser 100 passes through a window 201 of the optical path system and is reflected by the first reflector 202, the femtosecond/picosecond reflector 203 and the second reflector 204 in sequence to form at least one path of ultrafast laser to be converged to the silicon-based substrate 200, and the silicon-based substrate 200 is heated and regulated.
According to the embodiment of the present invention, light emitted from the ultrafast laser 100 passes through the window 201 of the optical path system and then is reflected to the first beam splitter 205 by the first mirror 202, the femtosecond/picosecond mirror 203 and the second mirror 204 in sequence.
The first beam splitter 205 splits the light into a first optical path and a second optical path, the first optical path is reflected to the second beam splitter 207 by the third reflector 206, and the second beam splitter 207 splits the first optical path into a third optical path and a fourth optical path. The third light path is reflected by the fourth mirror 209 and then converged to the silicon substrate 200. The fourth light path is reflected by the fifth mirror 208 and then converged to the silicon substrate 200.
The second light path is reflected to the third beam splitter 211 by the sixth reflecting mirror 210, and the third beam splitter 211 divides the second light path into a fifth light path and a sixth light path. The fifth light path is reflected by the seventh mirror 212 and then converged to the silicon substrate 200. The sixth optical path is reflected by the eighth mirror 213 and then converges to the silicon-based substrate.
According to the embodiment of the present invention, four reserved windows are disposed at the bottom of the cavity of the molecular beam epitaxy apparatus, and are respectively used for light reflected by the fourth reflector 209 on the third light path, light reflected by the fifth reflector 208 on the fourth light path, light reflected by the seventh reflector 212 on the fifth light path, and light reflected by the eighth reflector 213 on the sixth light path, and enter the cavity of the molecular beam epitaxy apparatus through the four reserved windows of the molecular beam epitaxy apparatus, and are converged to the silicon substrate 200.
In some preferred embodiments, three reserved windows are arranged at the bottom of the chamber of the molecular beam epitaxy device. In other embodiments, the number of the reserved windows is not limited to three, and the number of the reserved windows is set according to the requirement of beam control.
In some preferred embodiments, the light emitted from the optical path system may be vertically incident on the silicon-based substrate 200 through a reserved window of the molecular beam epitaxy apparatus chamber, or may be incident on the silicon-based substrate 200 through two or more different angles.
In some preferred embodiments, the light emitted from the optical path system is incident on the silicon-based substrate 200 through two or more different angles, and the femtosecond/picosecond laser beam interference is realized on the substrate, so that the heteroepitaxy of the controllable in-situ periodic nanostructure with intensity modulation can be conveniently researched through the distribution of interference intensity.
In some preferred embodiments, a femtosecond special polarization controller and a tunable filter can be further added into the optical path system to realize polarization and wavelength tuning.
Referring to fig. 2, a flow chart of a method for ultrafast laser assisted molecular beam epitaxy according to an embodiment of the present invention is shown, and according to an embodiment of the present invention, a method for ultrafast laser assisted molecular beam epitaxy is provided, the method includes the following steps:
and S1, cleaning a Si conventional substrate or a pattern substrate, and processing and preparing.
And S2, carrying out Si surface deoxidation treatment in a pretreatment chamber of molecular beam epitaxy equipment (MBE).
And S3, epitaxially growing a layer of Si or Si/Ge buffer layer on the Si substrate to form a clean and flat silicon-based substrate surface.
And S4, carrying out epitaxial growth of the III-V semiconductor material buffer layer in molecular beam epitaxy equipment (MBE), wherein the silicon-based substrate is heated and regulated by the ultrafast laser-assisted molecular beam epitaxy system provided by the invention.
And S5, testing and characterizing the quality of the epitaxial material.
And the quality test characterization of the epitaxial material is carried out by crystal quality, defects, surface appearance test and fluorescence test.
The idea of the test representation is that the representation of the growth process is combined with the representation after the epitaxy is finished, and different types of test means are mutually verified. In the epitaxial process, an atomic reconstruction structure, an epitaxial speed and an epitaxial growth mode are tested through Reflection High-Energy Electron Diffraction (RHEED), and the surface morphology, the atomic valence state and the nucleation morphology are tested through an approximately in-situ Electron Scanning Tunneling Microscope (STM)/X-ray photoelectron spectroscopy (XPS).
For the material after the epitaxy is finished, the crystal quality, the thin film structure and the stress are tested through high-resolution X-ray diffraction (HRXRD), the surface roughness is tested through AFM atomic force microscopy, the crystal structure, the atomic arrangement, the dislocation morphology and the element distribution at the atomic level are tested through a high-resolution transmission electron microscope (HRTEM), and the characteristics of the material, such as the optical performance, the defect state and the like, are tested through a variable-temperature photoluminescence spectrum, a spatial resolution spectrum and a carrier recombination life.
And S6, ultra-fast laser assisted epitaxial surface analysis.
And performing test analysis and theoretical analysis according to the epitaxial material quality test characterization in the step S5, and adjusting MBE process parameters and ultrafast laser parameters.
And S7, technological parameter adjustment of MBE.
And S8, ultrafast laser parameter adjustment.
And feeding back the parameters regulated in the step S7 and the step S8 to the step S4 to carry out epitaxial growth of the III-V semiconductor material buffer layer. Wherein the substrate temperature, beam-to-stream ratio, growth rate, ultrafast laser turn-on time are adjusted for the molecular beam epitaxy equipment (MBE). And adjusting parameters of power, wavelength, pulse width and pulse number of the ultrafast laser.
The invention provides an ultrafast laser auxiliary system for molecular beam epitaxy and a molecular beam epitaxy method.
According to the ultrafast laser auxiliary system for molecular beam epitaxy and the molecular beam epitaxy method, provided by the invention, the time size of the epitaxial growth dynamic process of the ultrafast laser material is matched, so that the fine regulation and control of the epitaxial micro process are facilitated.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (8)
1. An ultrafast laser assist system for molecular beam epitaxy, the system comprising:
an ultrafast laser, and an optical path system, wherein,
the optical path system comprises a first reflector, a femtosecond/picosecond reflector and a second reflector,
the light emitted by the ultrafast laser sequentially passes through the first reflector, the femtosecond/picosecond reflector and the second reflector for reflection, at least one path of ultrafast laser is formed and converged to the silicon-based substrate, and the silicon-based substrate is heated and regulated.
2. The system of claim 1, wherein the ultrafast laser emits light that is reflected by the first mirror, the femtosecond/picosecond mirror, and the second mirror in sequence to a first beam splitter;
the first spectroscope divides light into a first light path and a second light path, the first light path is reflected to a second spectroscope through a third reflector, and the second spectroscope divides the first light path into a third light path and a fourth light path;
and the third light path is reflected by a fourth reflector and then converged to the silicon-based substrate.
3. The system of claim 2, wherein the fourth optical path is reflected by the fifth mirror and converged to the silicon-based substrate.
4. The system of claim 2, wherein the second optical path is reflected via a sixth mirror to a third beam splitter, the third beam splitter splitting the second optical path into a fifth optical path and a sixth optical path;
and the fifth light path is reflected by a seventh reflector and then converged to the silicon-based substrate.
5. The system of claim 4, wherein the sixth optical path is converged to the silicon-based substrate after being reflected by the eighth mirror.
6. An ultrafast laser assisted molecular beam epitaxy method, characterized in that the method comprises the following method steps:
epitaxially growing a Si or Si/Ge buffer layer on the Si substrate to form a silicon-based substrate;
heating of the silicon-based substrate is regulated by the system of any one of claims 1 to 5.
7. The method of claim 6, wherein the heating conditioning the silicon-based substrate comprises: the substrate temperature, the beam flow ratio, the growth speed and the ultrafast laser turn-on time are adjusted by molecular beam epitaxy equipment.
8. The method of claim 6, wherein regulating the heating of the silicon-based substrate further comprises: and regulating and controlling parameters of power, wavelength, pulse width and pulse number of the ultrafast laser.
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| CN116607209A (en) * | 2023-05-29 | 2023-08-18 | 武汉大学 | Laser processing system of integrated MBE device |
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| CN116607209A (en) * | 2023-05-29 | 2023-08-18 | 武汉大学 | Laser processing system of integrated MBE device |
| CN116607209B (en) * | 2023-05-29 | 2024-02-09 | 武汉大学 | Laser processing system of integrated MBE device |
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