CN109166788A - A method of direct epitaxial growth Ge virtual substrate on a silicon substrate - Google Patents
A method of direct epitaxial growth Ge virtual substrate on a silicon substrate Download PDFInfo
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- CN109166788A CN109166788A CN201810992194.6A CN201810992194A CN109166788A CN 109166788 A CN109166788 A CN 109166788A CN 201810992194 A CN201810992194 A CN 201810992194A CN 109166788 A CN109166788 A CN 109166788A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 92
- 239000010703 silicon Substances 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 230000012010 growth Effects 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 42
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000010306 acid treatment Methods 0.000 claims abstract description 3
- 238000004381 surface treatment Methods 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000007773 growth pattern Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of methods of epitaxial growth Ge virtual substrate direct on a silicon substrate.This method specific steps include: step 1, obtain the silicon substrate of (100) crystal face or the silicon substrate of (111) crystal face；Step 2, it by after silicon substrate hydrofluoric acid treatment, is surface-treated in vacuum environment；Step 3, by the method for molecular beam epitaxy, silicon growth layer buffer layer on silicon substrate after treatment；Step 4, be adjusted to suitable growth temperature, then on silicon buffer layer direct epitaxial growth micron level thickness germanium virtual substrate.Method of the invention can on silicon wafer direct epitaxial Germanium virtual substrate, the germanium virtual substrate surface of growth is smooth, and monocrystalline quality is high, lattice can complete relaxation, can replace growth of the germanium substrate for subsequent material.For this method without the layer-by-layer growth pattern for stepping up Ge content, preparation process is simpler, can reduce cost.
Description
Technical field
The present invention relates to a kind of methods of epitaxial growth Ge virtual substrate direct on a silicon substrate, more specifically, it is related to
And the optimization to extension high quality germanium virtual substrate growth conditions direct on silicon substrate, the life of processing, buffer layer including substrate
Long and germanium virtual substrate growth temperature optimization process.
Background technique
Silicon (Si) and germanium (Ge) are most commonly seen semiconductor materials, are also important electronic element device materials.Silicon germanium
Epitaxial material can be used as the new material of silica-based high speed circuit studies, it is the preferred material of silicon substrate long wavelength light electric explorer.
In addition, germanium is matched with GaAs material lattice, silicon germanium epitaxial material can be used as the virtual of the materials such as silicon substrate GaAs
Substrate, silicon based opto-electronics are integrated, silica-based high-efficiency solar battery in terms of have important application prospect.
But since the lattice mismatch of germanium and silicon is 4% or more, silicon substrate Ge virtual substrate technology realizes that difficulty is big.From silicon
On substrate from the point of view of the key technical indexes of direct the obtained Ge epitaxial layer of extension, have the following problems:
1) Ge epi-layer surface roughness is big, the iii-v heterostructure growth being unfavorable on subsequent Ge buffer layer；
2) Ge epitaxial layer dislocation density is high, in the opto-electronic device in application, device performance is made to degenerate.
Germanium substrate price is more expensive simultaneously.Therefore, it develops and optimizes preparation high quality Ge extension layer process on silicon substrate
With important application value.
The epitaxial Germanium virtual substrate on current silicon substrate, existing method is: first in the germanium of the low Ge content of grown above silicon
Silicon alloy, then the layer-by-layer growth pattern of Ge content is continuously improved.This method is complicated for operation, needs to be constantly changing germanium silicon ratio
Example, not only wastes time and at high cost.
Summary of the invention
The object of the present invention is to provide a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate, this growths
Method preparation process is simpler, and cost is lower.
In order to achieve the above-mentioned object of the invention, The technical solution adopted by the invention is as follows:
A method of direct epitaxial growth Ge virtual substrate, specific steps include: on a silicon substrate
Step 1, the silicon substrate of (100) crystal face, or the silicon substrate of (111) crystal face are obtained；
Step 2, it by after silicon substrate hydrofluoric acid treatment, is surface-treated in vacuum environment；
Step 3, by the method for molecular beam epitaxy, silicon growth layer is buffered on the silicon substrate after surface treated
Layer；
Step 4, be adjusted to suitable growth temperature, then on silicon buffer layer direct epitaxial growth micron level thickness germanium
Virtual substrate.
Preferably, it in the step 2, for the silicon substrate of (100) crystal face, is carried out at surface at 500-600 DEG C of temperature
Reason.The time of processing is 5-10 minutes.
Preferably, it in the step 2, for the silicon substrate of (111) crystal face, is carried out at surface at 800-1000 DEG C of temperature
Reason.The time of processing is 5-10 minutes.
Further, in the step 3, the growth thickness of silicon buffer layer is 20-50nm.The growth temperature of silicon buffer layer is
400-600℃。
Further, in the step 4, suitable growth temperature is 200 DEG C.
The present invention direct epitaxial growth Ge virtual substrate on a silicon substrate provides a kind of system of novel germanium virtual substrate
Standby means, have the advantage that
(1) the germanium virtual substrate surface being prepared by the method for the invention is smooth, and monocrystalline quality is high, and lattice can be complete
Relaxation can replace germanium substrate, the growth for subsequent material.
(2) silicon (100) substrate and silicon (111) substrate of the method for the present invention processing can reach atomic level flatness.
(3) it using the mode of (200 DEG C) of low temperature growths, advantageously reduces and is answered caused by the thermal mismatching degree between different films
Power, to reduce defect generation.
(4) the germanium virtual substrate prepared using the method for the present invention, surfacing, silicon (100) epitaxial Germanium virtual substrate are thick
Rugosity is 988pm, and silicon (111) epitaxial Germanium virtual substrate roughness is 880pm；And interface between silicon substrate and germanium virtual substrate
Clearly.
(5) this method can directly epitaxial growth goes out germanium virtual substrate on a silicon substrate, does not need to contain by stepping up germanium
The layer-by-layer growth pattern growth of amount, so preparation process is simpler, cost is lower.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of direct epitaxial growth Ge virtual substrate on a silicon substrate of the invention.
Fig. 2 is the X-ray diffraction of direct epitaxial growth Ge virtual substrate on (a) silicon (100) substrate in the embodiment of the present invention
Figure；(b) on silicon (111) substrate direct epitaxial growth Ge virtual substrate X-ray diffractogram.
Fig. 3 is direct epitaxial growth Ge virtual substrate atomic force microscope on (a) silicon (100) substrate in the embodiment of the present invention
Figure；(b) direct epitaxial growth Ge virtual substrate atomic force microscopy diagram on silicon (111) substrate.
Fig. 4 is spread out between the X-ray of direct epitaxial growth Ge virtual substrate on silicon in the embodiment of the present invention (100) substrate is emptied
Penetrate figure.
Fig. 5 is the cross-sectional scans electricity of direct epitaxial growth Ge virtual substrate on (a) silicon (100) substrate in the embodiment of the present invention
Sub- microscope figure；(b) on silicon (111) substrate direct epitaxial growth Ge virtual substrate cross sectional scanning electron microscope figure.
Specific embodiment
The present invention will be further described in detail in the following with reference to the drawings and specific embodiments.
The present invention provides a kind of methods by molecular beam epitaxy direct epitaxial growth Ge virtual substrate on a silicon substrate.
Fig. 1 is the structural schematic diagram of the present embodiment germanium virtual substrate, it is specific the preparation method is as follows:
By solid-state source molecular beam epitaxy, (100) and (111) crystal face silicon substrate is surface-treated first.By hydrogen fluorine
Acid treated silicon substrate is passed to vacuum chamber, keeps substrate rotation, for silicon (100) substrate, substrate heater is increased to
It 500-600 DEG C, is kept for 5-10 minutes；For silicon (111) substrate, substrate heater is increased to 800-1000 DEG C, keeps 5-10
Minute.
Then the silicon buffer layer of one layer of 30nm thickness is grown on processed silicon substrate by the method for molecular beam epitaxy.Silicon
(100) growth temperature of silicon buffer layer is 400 DEG C on substrate；The growth temperature of silicon buffer layer is 550 DEG C on silicon (111) substrate.
Silicon source furnace used in the present embodiment is electron beam evaporation source, changes the growth rate of silicon by changing excitation current.
Germanium virtual substrate is grown on silicon buffer layer finally by the method for molecular beam epitaxy.Here the growth temperature chosen
It is 200 DEG C, growth rate isThe source Ge furnace is thermal evaporation sources furnace, changes the growth speed of Ge by changing source oven temperature degree
Rate.
The present embodiment direct extension on silicon (100) substrate and on silicon (111) substrate is respectively illustrated in Fig. 2 (a) and (b)
Grow the X-ray diffractogram of germanium virtual substrate.The peak of germanium virtual substrate in X-ray diffractogram is symmetrical, and intensity is high.In Fig. 2 (a)
Germanium peak width is 0.1412 °, and germanium peak width is 0.0556 ° in Fig. 2 (b), this illustrates that the germanium grown in the present embodiment is virtual
Substrate monocrystal is of high quality.Fig. 3 (a) and (b) are direct epitaxial growth on the present embodiment silicon (100) and silicon (111) substrate respectively
The atomic force microscopy diagram of germanium virtual substrate, it can be seen that the surface undulation degree of two samples is all pm magnitude, wherein silicon
(100) epitaxial Germanium virtual substrate roughness is 988pm, and silicon (111) epitaxial Germanium virtual substrate roughness is 880pm；This illustrates germanium
Virtual substrate surface is very smooth.
Fig. 4 is diffraction pattern between the X-ray of direct epitaxial Germanium growth virtual substrate on silicon (100) substrate is emptied, as shown in the figure
Germanium virtual substrate is complete relaxed state.
The present embodiment direct extension on silicon (100) substrate and on silicon (111) substrate is respectively illustrated in Fig. 5 (a) and (b)
The cross sectional scanning electron microscope figure for growing germanium virtual substrate, in figure it can be seen that silicon (100) epitaxial Germanium virtual substrate with a thickness of
1.21μm；Silicon (111) epitaxial Germanium virtual substrate with a thickness of 1.11 μm, reach micron dimension.
It can be seen that the germanium virtual substrate quality of present invention epitaxial growth direct on silicon wafer very according to the above characterization
Good, surfacing, the complete relaxation of germanium virtual substrate can replace growth of the germanium substrate for subsequent material.
Claims (8)
1. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate, which is characterized in that specific steps include:
Step 1, the silicon substrate of (100) crystal face, or the silicon substrate of (111) crystal face are obtained；
Step 2, it by after silicon substrate hydrofluoric acid treatment, is surface-treated in vacuum environment；
Step 3, by the method for molecular beam epitaxy, silicon growth layer buffer layer on the silicon substrate after surface treated；
Step 4, it is adjusted to suitable growth temperature, then the germanium of direct epitaxial growth micron level thickness is virtual on silicon buffer layer
Substrate.
2. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 1, feature exist
In for the silicon substrate of (100) crystal face, being surface-treated at 500-600 DEG C of temperature in the step 2.
3. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 2, feature exist
In the time of surface treatment is 5-10 minutes.
4. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 1, feature exist
In for the silicon substrate of (111) crystal face, being surface-treated at 800-1000 DEG C of temperature in the step 2.
5. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 4, feature exist
In the time of surface treatment is 5-10 minutes.
6. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 1, feature exist
In in the step 3, the growth thickness of silicon buffer layer is 20-50nm.
7. a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate according to claim 6, feature exist
In the growth temperature of the silicon buffer layer is 400-600 DEG C.
8. according to claim 1 to a kind of method of epitaxial growth Ge virtual substrate direct on a silicon substrate described in one of 7,
It is characterized in that, in the step 4, suitable growth temperature is 200 DEG C.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810992194.6A CN109166788B (en) | 2018-08-29 | 2018-08-29 | Method for directly epitaxially growing germanium virtual substrate on silicon substrate |
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| CN201810992194.6A CN109166788B (en) | 2018-08-29 | 2018-08-29 | Method for directly epitaxially growing germanium virtual substrate on silicon substrate |
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| CN109166788A true CN109166788A (en) | 2019-01-08 |
| CN109166788B CN109166788B (en) | 2021-03-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555457A (en) * | 2020-04-26 | 2021-10-26 | 南京大学 | Ge/Si substrate and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185686A1 (en) * | 2001-06-12 | 2002-12-12 | International Business Machines Corporation | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
| CN101459061A (en) * | 2009-01-07 | 2009-06-17 | 清华大学 | Preparation for relaxation thin SiGe virtual substrate |
-
2018
- 2018-08-29 CN CN201810992194.6A patent/CN109166788B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185686A1 (en) * | 2001-06-12 | 2002-12-12 | International Business Machines Corporation | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
| CN101459061A (en) * | 2009-01-07 | 2009-06-17 | 清华大学 | Preparation for relaxation thin SiGe virtual substrate |
Non-Patent Citations (2)
| Title |
|---|
| H. J. OSTEN ET.AL: "Surfactant-Controlled Solid Phase Epitaxy of Germanium on Silicon", 《PHYSICAL REVIEW LETTERS》 * |
| 周志文等: "硅衬底上锗外延层的生长", 《半导体材料》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555457A (en) * | 2020-04-26 | 2021-10-26 | 南京大学 | Ge/Si substrate and preparation method thereof |
| CN113555457B (en) * | 2020-04-26 | 2023-06-06 | 南京大学 | Ge/Si substrate and preparation method thereof |
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