JP2009221535A - Fine-structure element manufacturing apparatus and fine-structure element production method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fine-structure element manufacturing apparatus and a fine-structure element production method capable of producing a uniform fine-structure by applying the area selection growth technology. <P>SOLUTION: The fine-structure element manufacturing apparatus comprises a sample holder 40 with a substrate mounted thereon, a heater 50 for heating the substrate at the temperature in a predetermined range in order to selectively growing crystals on the substrate 30, at least one first aperture for selectively growing the crystal on the substrate 30, a mask 10 having a plurality of second apertures on the outer side of at least one aperture, and a mask holder 20 with the mask 10 being mounted thereon. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a fine structure element manufacturing apparatus and a fine structure element production method, and more particularly to a fine structure element production apparatus and a fine structure element production method to which a fine structure region selective growth technique is applied.

  Today, optical information communication networks are indispensable for society. Furthermore, the demand for communication is expanding rapidly, and the electrical elements that are used for digital signal processing that has been used in the past have a limit in the processing speed of the optical signal. There's a problem. That is, the method of controlling the optical signal with electricity has a problem with respect to power consumption and processing speed.

  Therefore, an all-optical switching element that controls an optical signal with light is highly expected. As examples of these all-optical switching elements, symmetric Mach-Zehnder all-optical switches as described below have been proposed at present (see Non-Patent Document 1, Non-Patent Document 2, etc.).

(Symmetric Mach-Zehnder all-optical switch)
As shown in FIG. 11, a symmetric Mach-Zehnder type all-optical switch (Photonic Crystal Mach-Zehnder: PC-SMZ) includes a photonic crystal optical waveguide 510 (PC-WG) and an optical waveguide. Quantum dots 520 (Quant Dot: QD) embedded in the basic component. A photonic crystal optical waveguide is arranged in a symmetric Mach-Zehnder type, and has a structure in which quantum dots are embedded in two optical nonlinear arms (shaded portions). Each nonlinear arm portion is provided with an optical waveguide for introducing control light (Control Pulse) for exciting quantum dots. In this element, the quantum dot is used as an optical nonlinear medium, and plays a role of modulating the phase of signal light (Signal Pulse).

  A specific switch operation is schematically shown in FIG. The signal light is incident from the second port from the upper left side in FIG. 12, and is divided into two by the first directional coupler (DC1). The divided signal light meets again at DC2, and in the state where the control light is not introduced, the phase difference between the two is 0, so that it is emitted from the lower port on the right side of the figure. Next, when the control light for turning on the switch is incident from the uppermost port on the left side of the figure, the quantum dots in the nonlinear arm (1) are excited and the carriers satisfy the conduction band levels in the quantum dots. Absorption saturation (third-order optical nonlinear phenomenon).

  As a result, the effective refractive index of the arm (1) changes, so that the phase of the signal light propagating through the arm (1) is shifted. When the phase shift amount is 180 degrees, when the phase-shifted arm (1) propagation light and the non-phase-shift arm (2) propagation light interfere again at DC2, the output port is switched to the upper side and switching occurs. Next, when the control light for turning off the switch is incident from the bottom port on the left side of the figure, the quantum dots in the nonlinear arm (2) are excited, and similarly, the phase of the arm (2) propagating light is also shifted. The phase difference of the propagation light of the arm disappears, and the signal light is emitted again from the lower port.

  An all-optical switch operation is realized in this way, but the most important for the fabrication of this element is to form uniform quantum dots in a position-selective manner only in the nonlinear arm region. In addition, when this element is integrated in a large amount on a single substrate, it is necessary to ensure the positional accuracy of the selected region.

[Optical flip-flop]
An optical flip-flop (PC-FF) is an optical digital signal processing element and has a structure in which two PC-SMZs are integrated as shown in FIG. Although a detailed description of the principle of operation is omitted, this element operates using light of two different wavelengths (λ ₁ and λ ₂ : solid line and dotted line in the figure). That is, PC-SMZ1 and PC-SMZ2 have a structure in which QDs having different absorption wavelengths are embedded in the nonlinear arm portion. Therefore, in order to realize the PC-FF, it is necessary to form QDs having two different absorption wavelengths monolithically on a single substrate. The details are described in the specification filed by the inventors (see Patent Document 1, etc.).

  In addition to the usual vapor deposition type crystal growth technique, a mask made of metal or the like is arranged on the sample as a technique for producing a fine structure such as a semiconductor thin film only in a specific selection region necessary for these all-optical switching elements. There are many reports on the method. In particular, inventing a method of manufacturing quantum dots only in selected regions using a mask that is devised so that a metal mask holder is mounted on a sample holder and the distance between the substrate and the mask is kept constant during crystal growth by the MBE method. Proposed by Okouchi et al. (See Patent Document 2, etc.).

JP 2008-46543 A JP 2008-34445 A Kiyoshi Asakawa, “Photonic crystal and quantum dot technologies for all-optical switch and logic devices” New Journal of Physics. 8 (2006) 208p Kiyoshi Asakawa et al. “Research on ultra-high-speed signal processing nano-optical control devices and optical integration technology” TARA NEWS No. 33 September 2006 10p Published by University of Tsukuba Advanced Interdisciplinary Research Center Kiyoshi Asakawa et al. “Structural control of photonic crystals for practical use” Japan Society of Applied Physics 74th volume (2005) 186p

  Quantum dots can be grown in a selected region by the method in Okochi, but when making PC-SMZ and PC-FF described in the background art, thermal radiation is generated from the growing metal mask. When the opening area of the mask pattern as shown in FIG. 14 is large, the relative coverage of the mask area in the central part and the peripheral part is different, so that the temperature distribution of the substrate during growth tends to be non-uniform. In addition, although the MBE molecular beam is sufficiently irradiated at the central portion of the metal mask opening region, it becomes deficient when going to the peripheral portion, resulting in variations between the formed selective growth regions. FIG. 15 shows an example of the photoluminescence emission intensity distribution mapping of the selective growth region of the QD produced by the conventional example. As can be seen from this result, the emission intensity is relatively strong at the center of the sample, but tends to become weaker toward the periphery, resulting in an uneven emission intensity distribution as a whole.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a fine structure element manufacturing apparatus and a fine structure element production method that solve the above problems and apply a fine structure region selective growth technique.

  The present inventors have found the utility of homogenizing the substrate temperature distribution during crystal growth and promoting the homogenization of the feedstock on the substrate surface, and have completed the following invention.

  (1) A sample holder on which a substrate is mounted, a heater for heating the temperature of the substrate to a predetermined range in order to selectively grow crystals on the substrate, and at least for selectively growing crystals on the substrate A microstructure comprising one or more first openings, a mask having a plurality of second openings outside the one or more first openings, and a mask holder on which the mask is mounted Element manufacturing equipment.

  According to the microstructure device manufacturing apparatus described in (1), a sample holder on which a substrate is mounted, a heater that heats the temperature of the substrate to a predetermined range in order to selectively grow crystals on the substrate, a mask, And a mask holder on which the mask is mounted. The mask has at least one or more first openings for selectively growing crystals on the substrate and a plurality of second openings on the outside of the one or more first openings. The growth conditions such as the temperature gradient and the feedstock partial pressure during quantum dot growth can be made uniform, and as a result, the structure and optical characteristics of the selected region grown quantum dots can be made uniform.

  The substrate is a substrate for producing a microstructure element. The material may be a semiconductor, a metal, a magnetic material, or a ferroelectric material.

  The first opening serves as a guide for irradiating a raw material to a required position when a crystal is selectively grown on the substrate, and a plurality of first openings for producing a larger number of elements than one substrate. Parts are provided. On the other hand, the second opening is provided in order to achieve uniform growth conditions such as temperature gradient and supply material partial pressure during quantum dot growth. The second opening is desirably provided at the center of the mask and the outer periphery of the first opening.

  (2) The mask holder is provided with a plurality of diffusion holes through which a material irradiated for crystal growth can be diffused between the space between the substrate and the mask and the outside of the mask holder. (1) The fine structure element manufacturing apparatus according to (1).

  According to the microstructure device manufacturing apparatus described in (2), the raw material irradiated for growing crystals can be diffused in the mask holder between the space between the substrate and the mask and the outside of the mask holder. A plurality of diffusion holes are provided. The group V raw material of the periodic table irradiated during growth has a greater tendency to diffuse on the substrate surface than the group III raw material of the periodic table, and after irradiating the opening, the surface diffuses around the opening. The element manufacturing region has a large number of openings, so that there are sufficient Group V materials. However, since the peripheral part has relatively few openings, the Group V materials are scarce. Therefore, by providing a plurality of diffusion holes in the mask holder, it is possible to diffuse the raw material irradiated for crystal growth inside and outside the mask holder, so that it is possible to make up for this shortage of group V materials.

  (3) The fine structure element manufacturing apparatus according to (1) or (2), wherein the heated portion of the substrate moves with time by the heater.

  According to the microstructure element manufacturing apparatus described in (3), the heated portion of the substrate is moved with time by the heater, so that the temperature of the substrate becomes uniform. In addition, since the heated portion of the substrate moves with time, the group V raw material can be more diffused in the microstructure device.

  (4) In the heater, the heating element is electrically composed of two or more phases, and a heated portion of the substrate moves with time by applying a voltage having a different phase to each phase. The microstructure device manufacturing apparatus according to (3).

  According to the microstructure device manufacturing apparatus described in (4), the heating element is electrically composed of two or more phases, and the heated portion of the substrate moves with time by applying voltages of different phases to each phase. To do. It is desirable that the heating element is composed of three phases, and the heated portion of the substrate rotates like a three-phase motor by applying a three-phase alternating current. Note that a heated portion of the substrate can be rotated by applying a voltage having a different phase by a capacitor and a reactor with a single-phase power source. Even when it is difficult to rotate the substrate for some reason, this mechanism can provide the same effect as that of forming a uniform layer by rotating the substrate.

  (5) The substrate has a step of mounting on the sample holder, at least one or more openings for selectively growing crystals on the substrate, and a plurality of openings outside the one or more openings. A step of mounting a mask on the mask holder, a positioning step of positioning the sample holder and the mask holder in an axial direction using an elastic body, and a substrate temperature for selectively growing crystals on the substrate. A method for producing a fine structure element, comprising: a heating step of heating and holding the substrate within a range; and a crystal growth step of evaporating a material on the substrate to grow a crystal on the substrate.

  The invention described in (5) relates to a method for producing a fine structure element. Using the microstructure device manufacturing apparatus described in (1), a method for producing a microstructure device with uniform elements can be realized.

  (6) The mask holder is provided with a plurality of diffusion holes through which a material irradiated for crystal growth can be diffused between the space between the substrate and the mask and the outside of the mask holder. In the heating step, the part to be heated of the substrate moves with time, and the method for producing a fine structure element according to (5).

  The invention described in (6) relates to a method for producing a fine structure element, and realizes a fine structure element production method for a uniform element by using the fine structure element manufacturing apparatus described in (3) or (4). can do.

  According to the present invention, when PC-SMZ or PC-FF is manufactured, thermal radiation is generated from the growing metal mask, and particularly in the case where the opening area of the mask pattern is large, in the central portion and the peripheral portion. Resolving the problem of non-uniform temperature distribution of the substrate during growth because the relative coverage of the mask area is different, the fine structure element manufacturing apparatus and the fine structure element production suitable for the production of uniform elements A method can be provided.

  Hereinafter, embodiments of the present invention will be described. This is merely an example, and the technical scope of the present invention is not limited to this.

<Example 1>
FIG. 1 is a diagram for explaining a crystal growth apparatus using the microstructure device manufacturing apparatus of the present invention, and FIG. 2 is a diagram showing an example of a mask pattern of the microstructure element manufacturing apparatus of the present invention. FIG. 3 is a block diagram showing the steps of the fine structure element production method of the present invention. FIG. 4 is a diagram showing a PL emission intensity distribution of the quantum dot selective growth produced by the mask pattern of the present invention. Hereinafter, description will be given with reference to these drawings.

  As shown in FIG. 1A, the microstructure device manufacturing apparatus 1 of the present invention includes a sample holder 40 having a substrate 30 mounted thereon and having a rotation restricting means 44 capable of defining an angle in the rotation direction, and the substrate 30. The position fixing means 29 which is bonded to the rotation restricting means 44 and the relative position between the sample holder 40 in the rotation direction and the radial direction is determined by joining the mask 10 having at least one opening for selectively growing crystals on the surface. And an elastic body provided so that the sample holder 40 and the mask holder 20 are separated from each other in the axial direction in order to position the substrate 30 and the mask 10 close to a predetermined distance. There is a certain spring 28 and a heater 50 that heats and maintains the temperature of the substrate 30 within a predetermined range when the crystal is stably grown. FIG. 1B is an enlarged view showing the substrate 30, the mask 10, and the selective crystal growth layer 32.

  When performing crystal growth, the microstructure device manufacturing apparatus 1 is placed in a growth chamber isolated from the atmosphere of the crystal growth apparatus. The crystal growth apparatus is provided with a plurality of evaporation sources 60 (60A, 60B, 60C) for irradiating the substrate 30 with the raw material. Further, the evaporation source 60 does not have to be provided in the growth chamber as a whole, and the raw material irradiation port may be provided in the growth chamber. Further, the number of evaporation sources 60 is not limited to three. Note that the crystal growth apparatus includes an exhaust pump for decompressing the growth chamber and piping for connecting the exhaust pump and the growth chamber, and the configuration thereof is the same as the conventional one, and the description thereof is omitted. For details, see Kazuo Nakajima's “Epitaxial Growth Mechanism” published by Kyoritsu Shuppan Co., Ltd., May 20, 2005, p. See 78-79.

  In the case of a symmetric Mach-Zehnder all-optical switch, a thin film or a QD is grown on a GaAs substrate by molecular beam epitaxy (MBE). In the vacuum container, each element constituting the semiconductor is supplied from a supply source (source) and grown as a crystal on a substrate heated to an appropriate temperature. Each constituent element is Ga, In, Al, As, or the like, and a simple substance or a compound source is used as a supply source of these constituent elements.

  A specific mask pattern is shown in FIG. The mask 10 is a disk made of tantalum (Ta) and having a diameter of 35 mm, and has a thickness of 0.1 mm. The second opening 12 provided in the center is provided for monitoring the substrate temperature during crystal growth. In order to measure the substrate surface temperature during crystal growth, in the case of the molecular beam epitaxy method, a method using an infrared radiation thermometer or a method using a reflection high energy electron diffraction (RHEED) method is generally used. Is. The infrared radiation thermometer measures infrared rays radiated from the substrate surface and determines the substrate temperature. RHEED irradiates the substrate with an electron beam at a very low angle, forms an image of the reflected diffracted electron beam on the opposing fluorescent plate, analyzes the surface structure, measures the transition point of the surface structure, Is determined.

  As shown in FIG. 2, first opening block blocks 13 and 14 are provided. The first opening blocks 13 and 14 are provided with a large number of 0.5 mm square first openings. As shown in FIG. 2, second openings 13 </ b> A, 13 </ b> B, 13 </ b> C, and 13 </ b> D are provided outside the first opening block 13. Similarly, second openings 14A, 14B, 14C, and 14D are provided outside the first opening block 14 as shown in FIG.

  FIG. 3 is a diagram showing the steps of the fine structure element production method of the present invention. The substrate 30 is mounted on the sample holder 40 having the rotation restricting means 44 that can regulate the angle in the rotation direction (S110). Then, the mask 10 having at least one or more first openings is mounted on the mask holder 20 (S120). Further, the sample holder 40 and the mask holder 20 are positioned in the axial direction using the spring 28 which is an elastic body (S130). After positioning, the temperature of the substrate 30 is heated to a predetermined range by the heater 50 and held. Then, the material is evaporated on the substrate 30 by the evaporation source 60, and the selective crystal growth layer 32 (see FIG. 1) is selectively grown on the substrate 30 (S150).

  A plurality of new second openings 13A, 13B, 13C, 13D, 14A, 14B, 14C, and 14D are provided to influence the influence of thermal radiation on the selective growth region generated from the mask 10 in the shielding region around the mask 10. And promotes uniform substrate temperature distribution during growth. Further, by forming openings of a plurality of second openings 13A, 13B, 13C, 13D, 14A, 14B, 14C, and 14D in the peripheral part outside the selective growth region, the substrate of the supply material at the time of molecular beam irradiation The supply to the surface is also performed by wrapping around from the peripheral part, and the uniformization of the feedstock on the surface of the substrate 30 is promoted.

  In the case of the present invention, as shown in FIG. 2, the peripheral region has a plurality of second openings 13A, 13B, 13C, 13D, 14A, 14B, 14C, and 14D. Since these added second openings are formed outside the device manufacturing region, they are not used for actual device manufacturing. However, it has a great effect on improving the uniformity of the QD formed in the selective growth region.

  As an evaluation method of the manufactured sample, measurement of photoluminescence (PL) by excitation with a He—Ne laser (λ = 633 nm) was performed at room temperature. The sample stage was a high-resolution drive stage using a stepping motor so that the PL spectrum could be measured at an arbitrary position on the substrate. Further, by mapping the PL intensity at each coordinate position in the substrate plane, the light emission position, that is, the QD growth region was determined.

  FIG. 4 shows a photoluminescence emission intensity distribution diagram of a QD selective growth sample produced using the mask pattern shown in FIG. Compared with FIG. 15, it can be seen that the PL light emission intensity distribution in each selective growth region has been dramatically improved.

  This is largely due to the fact that the temperature distribution on the surface of the substrate 30 is improved by providing the second opening at the periphery. The mask 10 serves to block the irradiation of the raw material from the evaporation source, and the mask 10 radiates heat from above the substrate during growth. This is because the mask 10 itself is integrally heated with the substrate holder. When a semi-insulating GaAs substrate is used as the substrate 30, far infrared rays generated from the heater are transmitted through the substrate 30, and the far infrared rays are absorbed by the mask 10 made of tantalum. Heated. Since the mask 10 is close to the substrate 30 and there are few openings in the peripheral region, more heat is applied to the substrate than in the element manufacturing region having many opening regions. Accordingly, the surface temperature of the substrate 30 in the peripheral portion increases, and a distribution in which the temperature on the substrate 30 is different occurs.

  Further, the Group V source material (for example, arsenic) of the periodic table irradiated at the time of growth has a larger tendency to diffuse on the surface of the substrate 30 than the Group III source material of the periodic table. The surface diffuses around the first opening. In the device manufacturing region, there are a large number of first openings, so that there are sufficient Group V materials. However, since there are few openings in the periphery, the Group V materials are scarce. Therefore, by providing the second opening outside the element manufacturing region, it becomes possible to compensate for the lack of the V group material. The synergistic action of these effects greatly improves the uniformity of the QD formed in the selective growth region.

<Example 2>
Example 2 is a fine structure element manufacturing apparatus and fine structure in which the substrate temperature is made more uniform by diffusing the irradiated raw material for growing the crystal and moving the heated portion of the substrate with time. An object is to provide an element production method. FIG. 5 is a perspective view of an example of a mask holder and a mask according to the present invention, and FIG. 6 is a diagram showing another example of a mask pattern of the microstructure device manufacturing apparatus of the present invention. FIG. 7 is an example of a connection diagram of heaters of the heater of the present invention. FIG. 8 is a specific example of a heater connection diagram of the heater of the present invention. FIG. 9 is a block diagram showing a process of another example of the microstructure manufacturing method of the present invention. Hereinafter, description will be given with reference to these drawings.

  As shown in FIG. 5, the mask holder 200 includes a plurality of diffusions in which a material irradiated to grow crystals can be diffused between the space between the substrate 30 and the mask 100 and the outside of the mask holder 200. Holes 210A, 210B, 210C,... 210H are provided.

  As shown in FIG. 6, the mask 100 is provided with a second opening 120 having a diameter of 6 mm or more at the center, and first opening blocks 130 and 140 around the second opening 120. The first opening blocks 130 and 140 are composed of a large number of openings for selectively growing crystals on the substrate 30. Outside the first opening blocks 130 and 140, second openings 130A, 130B, 130C, 130D, 140A, 140B, 140C, and 140D are provided.

  The diffusion holes 210A,... 210H and the second openings 130A,... 140D are desirably attached at relative positions as shown in FIG.

  As for the heater of the heater 50, it is desirable that the heated portion of the substrate 30 moves with time. As shown in FIG. 7, the heater U, the heater V, and the heater W are connected in a star shape, and a three-phase AC voltage is applied to each terminal to provide a rotating heat source like a rotating magnetic field of an AC motor. be able to.

  More specifically, as shown in FIG. 8, the substrate 30 is arranged by connecting the heaters 15 degrees apart from each other on a circular plate as shown in FIG. The temperature of the substrate 30 is made uniform by rotating the portion to be heated with time. Further, since the heated portion of the substrate 30 rotates with time, the irradiated raw material can be more diffused.

  In order to move the heated portion of the substrate 30 with time, the heater may be rotated, or a single-phase alternating current may be used instead of a three-phase alternating current.

  On the other hand, in Example 2, in order to measure the substrate surface temperature during the crystal growth described above by making the second opening at the center 6 mm or more in diameter and using a large number of diffusion holes 210A. In addition, when using a reflection high energy electron diffraction (RHEED) method, there is an advantage that the temperature of the substrate 30 can be measured in different directions of the crystal.

  In such a fine structure element production method, as shown in FIG. 9, the substrate 30 is mounted on the sample holder 40 (S210). Next, a mask 100 having at least one or more openings for selectively growing crystals on the substrate 30 and a plurality of openings outside the one or more openings is mounted on the mask holder 200 (S220). . Then, the sample holder 40 and the mask holder 200 are positioned in the axial direction using the elastic body 28 (S230). Thereafter, in order to selectively grow crystals on the substrate 30, the temperature of the substrate 30 is moved within a predetermined range with time to be heated and held (S240). The material is evaporated on the substrate 30 to grow crystals on the substrate (S250). In this way, it is possible to produce a microstructural element with better uniformity.

<Example 3>
Example 3 is another example of the mask of the microstructure device manufacturing apparatus of the present invention. As shown in FIG. 10, the mask 300 of Example 3 is provided with a cross-shaped opening 320 at the center.

  As shown in FIG. 10, first opening blocks 330, 340, 350, 360 for selectively growing crystals on the substrate 30 are provided. The first opening block 330, 340, 350, 360 is provided with a number of 0.5 mm square first openings. As shown in FIG. 10, second openings 330A, 340A, 350A, and 360A are provided outside the first opening blocks 330, 340, 350, and 360.

  Even in the mask 300 as shown in FIG. 10, the same effect as that of the first or second embodiment can be expected by combining with the elements of the first or second embodiment.

  As mentioned above, although demonstrated using embodiment of this invention, the technical scope of this invention is not limited to the range as described in the said embodiment. Various modifications or improvements can be added to the above embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention. For example, a self-organized InAs light control element that irradiates a selected region with In and As on a GaAs substrate that transmits near-infrared light has been mainly described. However, not only a GaAs substrate but also other substrates such as gallium nitride ( It is also possible to cope with a blue wavelength light control element using GaN), zinc oxide (ZnO), or the like.

It is a figure explaining the crystal growth apparatus using the microstructure device manufacturing apparatus of this invention. It is a figure which shows an example of the mask pattern of the fine structure element manufacturing apparatus of this invention. It is a block diagram showing the process of the fine structure element manufacturing method of this invention. It is a figure which shows PL light emission intensity distribution of the quantum dot selective growth produced with the mask pattern of this invention. It is a perspective view of an example of a mask holder and a mask by the present invention. It is a figure which shows the other example of the mask pattern of the fine structure element manufacturing apparatus of this invention. It is an example of the connection diagram of the heater of the heater of this invention. It is a specific example of the connection diagram of the heater of the heater of this invention. It is a block diagram showing the process of another example of the fine structure element production method of this invention. It is another Example of the mask of the fine structure element manufacturing apparatus of this invention. It is a figure explaining a symmetrical Mach-Zehnder type all-optical switch. It is a figure explaining operation | movement of a symmetrical Mach-Zehnder type all-optical switch. It is a figure explaining the optical flip-flop element which has the light control element of this invention. It is a pattern figure of the conventional mask. An example of the photoluminescence emission intensity distribution mapping of the selective growth area | region of QD produced by the prior art example is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Fine structure element manufacturing apparatus 10 Mask 12 2nd opening part 13 1st opening part block 13A, 13B, 13C, 13D 2nd opening part 14 1st opening part block 14A, 14B, 14C, 14D 2nd Opening 20 Mask holder 28 Spring 30 Substrate 32 Selective crystal growth layer 40 Sample holder 44 Rotation restricting means 50 Heater 60 Evaporation source 100 Mask 120 Second opening 130 First opening block 130A, 130B, 130C, 130D First Two openings 140 First opening block 140A, 140B, 140C, 140D Second opening 200 Mask holder 210A, 210B, 210C,... 210H Diffusion hole 510 Photonic crystal optical waveguide 520 Quantum dot

Claims (6)

A sample holder on which a substrate is mounted;
A heater for heating the temperature of the substrate to a predetermined range in order to selectively grow crystals on the substrate;
At least one or more first openings for selectively growing crystals on the substrate; and a mask having a plurality of second openings outside the one or more first openings;
A mask holder on which the mask is mounted;
A fine structure element manufacturing apparatus comprising:   The mask holder is provided with a plurality of diffusion holes through which a material irradiated for crystal growth can be diffused between the space between the substrate and the mask and the outside of the mask holder. The microstructure device manufacturing apparatus according to claim 1.   3. The microstructure device manufacturing apparatus according to claim 1, wherein the heated portion of the substrate moves with time by the heater.   4. The heating device according to claim 3, wherein a heating element is electrically composed of two or more phases, and a heated portion of the substrate moves with time by applying a voltage having a different phase to each phase. The fine structure element manufacturing apparatus according to 1. A step of mounting the substrate on the sample holder;
Mounting at least one or more openings for selectively growing a crystal on the substrate and a mask having a plurality of openings outside the one or more openings on a mask holder;
A positioning step of positioning the sample holder and the mask holder in an axial direction using an elastic body;
A heating step of heating and holding the temperature of the substrate within a predetermined range in order to selectively grow crystals on the substrate;
A crystal growth step of evaporating a material on the substrate to grow a crystal on the substrate;
A method for producing a fine structure element. The mask holder is provided with a plurality of diffusion holes in which a material irradiated to grow crystals can be diffused between the space between the substrate and the mask and the outside of the mask holder,
6. The method for producing a microstructure element according to claim 5, wherein the heated portion of the substrate moves with time in the heating step.