CN115679288A - Coating apparatus and control method thereof - Google Patents

Abstract

The application relates to coating equipment and a control method thereof, wherein the coating equipment comprises a reaction chamber and an air pumping system, the reaction chamber is provided with an exhaust part, the air pumping system comprises an exhaust pipe valve component, a first pump body and a second pump body, the inlet side of the first pump body and the inlet of the second pump body are connected to the exhaust part through the exhaust pipe valve component, the outlet side of the first pump body is communicated with the atmosphere, the vacuum degree of the second pump body is greater than that of the first pump body, and the outlet side of the second pump body is connected to the inlet side of the first pump body through the exhaust pipe valve component. This application can realize the requirement of higher vacuum through the second pump body, strengthens taking out of impurity such as volatile organic substance, moisture in the reaction chamber, improves the cleanliness factor in reaction chamber, reduces the impurity content in the film, improves the film quality of preparing. Simultaneously, the setting of the first pump body not only can reduce the load of the second pump body, and pre-pump, improve the life of the second pump body, avoid the second pump body to transship and influence the evacuation.

Description

Coating apparatus and control method thereof

Technical Field

The application relates to the technical field of coating equipment, in particular to coating equipment and a control method thereof.

Background

Coating technologies such as Atomic Layer Deposition (ALD), plasma Enhanced Atomic Layer Deposition (PEALD), chemical Vapor Deposition (CVD), plasma Enhanced Chemical Vapor Deposition (PECVD) and the like are widely applied to micro-nano processing processes of integrated circuits, photovoltaics, new energy and the like, and along with the continuous development of advanced manufacturing technologies, the quality requirement of a film obtained by coating is higher and higher.

When traditional coating equipment is used for vacuumizing the reaction cavity, the effect of removing impurities such as moisture and volatile organic substances in the reaction cavity is not ideal, and the improvement of the quality of the film is not facilitated.

Disclosure of Invention

Therefore, it is necessary to provide a coating apparatus for improving the above defects and a control method thereof, aiming at the problem that the quality of a thin film is not high due to the non-ideal removal of impurities in a reaction chamber of the coating apparatus.

A plating apparatus comprising:

a reaction chamber having an exhaust portion;

the exhaust system comprises an exhaust pipe valve assembly, a first pump body and a second pump body, wherein the inlet side of the first pump body and the inlet side of the second pump body are both connected to the exhaust part through the exhaust pipe valve assembly, and the outlet side of the first pump body is communicated with the atmosphere;

wherein a vacuum degree of the second pump is greater than a vacuum degree of the first pump, and an outlet side of the second pump is connected to an inlet side of the first pump via the exhaust pipe valve assembly.

In one embodiment, the exhaust pipe valve assembly comprises:

a first air extraction pipeline for communicating the first pump body with the exhaust part,

A second air extraction pipeline for communicating the second pump body with the exhaust part,

A third air pumping pipeline for communicating the second pump body and the first pump body,

the first air extraction valve is arranged on the first air extraction pipeline, the second air extraction valve is arranged on the second air extraction pipeline, and the third air extraction valve is arranged on the third air extraction pipeline;

the first air exhaust valve part, the second air exhaust valve part and the third air exhaust valve part are all configured to be capable of respectively conducting or stopping a pipeline in which the first air exhaust valve part, the second air exhaust valve part and the third air exhaust valve part are located when the first air exhaust valve part, the second air exhaust valve part and the third air exhaust valve part are opened or closed.

In one embodiment, the exhaust pipe valve assembly comprises an exhaust main pipeline and a fourth air exhaust valve, the first air exhaust pipeline and the second air exhaust pipeline are communicated with the exhaust part through the exhaust main pipeline,

the fourth air exhaust valve is arranged on the exhaust main pipeline and is configured to be capable of conducting or stopping the exhaust main pipeline when being opened and closed.

In one embodiment, the first pump body is a dry pump, and the second pump body is a molecular pump or a condensate pump.

In one embodiment, the reaction chamber further has a gas inlet portion; the coating equipment also comprises an air inlet pipe valve component;

the gas inlet portion is configured to independently communicate with a precursor supply source, a first reaction gas supply source and a plasma generation device for providing a second reaction gas in a plasma state, respectively, via the gas inlet pipe valve assembly.

In one embodiment, the exhaust pipe valve assembly comprises a first bypass, one end of the first bypass is connected to the exhaust part, and the other end of the first bypass is connected between the inlet sides of the first pump body;

the coating equipment further comprises a first monitoring device arranged on the first bypass, and the first monitoring device is configured to be capable of acquiring a first gas flow characteristic of gas flowing through the first monitoring device so as to be used for monitoring the coating state in the reaction chamber.

In one embodiment, the exhaust pipe valve assembly includes a second bypass, one end of which is connected to the exhaust portion and the other end of which is connected between the inlet sides of the first pump bodies;

the coating equipment further comprises a second monitoring device arranged on the second bypass, and the second monitoring device is configured to be capable of acquiring a second gas flow characteristic of gas flowing through the second monitoring device so as to be used for monitoring the cleaning state in the reaction cavity.

In one embodiment, the coating apparatus further includes a particle trap disposed on an inlet side of the first pump and disposed on a flow path of all fluid entering the first pump.

A method of controlling a coating apparatus, comprising:

when entering the vacuum-pumping stage, executing the step 10: successively executing a first air extraction operation and a second air extraction operation;

the first pumping operation comprises: the method comprises the following steps of conducting a first pump body and an exhaust part of a reaction cavity, stopping a second pump body and the exhaust part, and starting the first pump body;

the second pumping operation comprises: and switching on the second pump body and the exhaust part and the second pump body and the first pump body, and starting the first pump body and the second pump body.

In one embodiment, the step 10 further includes: after the second pumping operation, executing a third pumping operation;

the third pumping operation comprises: and switching on the first pump body and the exhaust part, switching off the second pump body and the exhaust part, starting the first pump body and closing the second pump body.

In one embodiment, the control method further includes:

when entering the coating stage, executing the step 20: synchronously executing the third air pumping operation and the air supply operation;

the gas supply operation comprises a coating gas supply operation, a pretreatment gas supply operation and/or a post-treatment gas supply operation, wherein the pretreatment gas supply operation is executed before the coating gas supply operation, and the post-treatment gas supply operation is executed after the coating gas supply operation;

the coating air supply operation comprises: sequentially conducting a gas inlet part and a precursor supply source of the reaction chamber, and the gas inlet part and a first reaction gas supply source;

the pre-treatment air supply operation and the post-treatment air supply operation both comprise: and conducting the gas inlet part and the plasma generating device.

In one embodiment, the control method further comprises:

when entering the coating stage, the step S30 is also executed: performing coating monitoring operation;

the coating monitoring operation comprises:

the exhaust part and the first monitoring device are conducted, and first airflow characteristics obtained by the first monitoring device are obtained;

and judging the film coating state in the reaction cavity according to the first air flow characteristic.

In one embodiment, the control method further includes:

when entering the cleaning phase, step S40 is executed: performing the third pumping operation and the cleaning operation;

the cleaning operation comprises: and the gas inlet part of the reaction cavity and the plasma generating device are communicated.

In one embodiment, the step S40 further includes: executing a cleaning monitoring operation:

the cleaning monitoring operation includes:

conducting the exhaust part and a second monitoring device, and acquiring a second air flow characteristic acquired by the second monitoring device;

and stopping the cleaning operation when the second gas flow characteristic indicates that the cleaning of the reaction cavity is finished.

According to the film coating equipment and the control method thereof, the first pump body with low vacuum degree and the second pump body with high vacuum degree are arranged, and the requirement of higher vacuum degree can be met through the second pump body, so that the extraction of impurities such as volatile organic substances, moisture and the like in the reaction cavity is enhanced, the cleanliness of the reaction cavity is improved, the impurity content in the film is reduced, and the quality of the prepared film is improved. Simultaneously, the setting of the first pump body not only can reduce the load of the second pump body, and pre-pump, improve the life of the second pump body, avoid the second pump body to transship and influence the evacuation.

Drawings

FIG. 1 is a schematic structural diagram of a coating apparatus according to an embodiment of the present disclosure;

FIG. 2 is a schematic flow chart illustrating a control method of a coating apparatus according to an embodiment of the present disclosure;

FIG. 3 is a schematic flow chart of a control method of a coating apparatus according to another embodiment of the present disclosure;

FIG. 4 is a schematic flow chart of a control method of a coating apparatus according to another embodiment of the present application;

FIG. 5 is a schematic flow chart of a control method of a coating apparatus according to another embodiment of the present application;

fig. 6 is a schematic flow chart of a control method of a coating apparatus according to another embodiment of the present application.

Description of reference numerals:

100. coating equipment; 10. a reaction chamber; 11. an exhaust section; 12. an air intake portion; 20. an air extraction system; 21. an exhaust pipe valve assembly; 21a, a first air extraction pipeline; a1, a first section of pipeline; a2, a second section of pipeline; 21b, a second air extraction pipeline; 21c, a third air extraction pipeline; 21d, an exhaust main pipeline; 21e, a first bypass; 21f, a second bypass; 21g, a first air extraction valve; 21h, a second air extraction valve; 21i, a third air extraction valve; 21j, a fourth bleed valve; 21k, a first bypass valve element; 21m, a second bypass valve element; 22. a first pump body; 23. a second pump body; 30. an intake pipe valve assembly; 31. a first intake line; 32. a second air intake line; 33. a third gas inlet line; 34. a first air intake valve; 35. a second air intake valve; 36. a third intake valve; 40. a first monitoring device; 50. a second monitoring device; 60. a particle trap; 70. a plasma generating device; 200. a precursor supply; 300. a first reactive gas supply source; 400. a second reactant gas supply.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and that modifications may be made by one skilled in the art without departing from the spirit and scope of the application and it is therefore not intended to be limited to the specific embodiments disclosed below.

In the description of the present application, it is to be understood that the terms "central," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the present application.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are for purposes of illustration only and do not denote a single embodiment.

The inventor of the application notices that in the correlation technique, when filming equipment vacuumed the reaction chamber, mostly used a dry pump to bleed, and the vacuum of dry pump is lower, and it is unsatisfactory to get rid of the effect to impurity such as moisture, volatile organic substance that exist in the reaction chamber, is unfavorable for the improvement of film quality. Based on the above, a film coating device capable of improving the quality of a film and a control method thereof are provided.

Referring to fig. 1, a coating apparatus 100 provided in some embodiments of the present disclosure includes a reaction chamber 10 and an air pumping system 20, the reaction chamber 10 has an exhaust portion 11, the air pumping system 20 includes an exhaust pipe valve assembly 21, a first pump 22 and a second pump 23, an inlet side of the first pump 22 and an inlet side of the second pump 23 are both connected to the exhaust portion 11 through the exhaust pipe valve assembly 21, an outlet side of the first pump 22 is connected to the atmosphere, wherein a vacuum degree of the second pump 23 is greater than a vacuum degree of the first pump 22, and the outlet side of the second pump 23 is connected to the inlet side of the first pump 22 through the exhaust pipe valve assembly 21.

The reaction chamber 10 is a main place for performing coating by the coating apparatus 100, and the specific structure of the reaction chamber 10 depends on different coating technologies, and may be set by referring to the structure of the reaction chamber 10 in the prior art, which is not limited in this embodiment. The exhaust portion 11 of the reaction chamber 10 may be configured as an exhaust port, an exhaust valve, or the like, and is not particularly limited.

The exhaust pipe valve assembly 21 includes an exhaust pipe and an exhaust valve disposed on the exhaust pipe, the exhaust pipe is used as an intermediary for connecting the exhaust portion 11 with the first pump 22 and the second pump 23, and is used for allowing the fluid in the reaction chamber 10 to flow to the first pump 22 and the second pump 23, and the exhaust valve on the exhaust pipe is used for cutting off or conducting the fluid flowing through the pipe. Understandably, the configuration of the exhaust pipe valve assembly 21 is various, and is a conventional arrangement in the art, and is not limited herein.

The vacuum degree of the first pump body 22 is smaller than that of the second pump body 23, and the greater the vacuum degree is, the greater the pumping intensity is, the better the removal effect of impurities such as moisture and volatile organic substances existing in the reaction chamber 10 is, and the higher the cleanliness in the reaction chamber 10 is.

In practical application, the coating device 100 can open the first pump body 22 to pre-pump when vacuumizing, the fluid directly flows to the first pump body 22 from the reaction chamber 10, and the vacuum degree of the first pump body 22 is low, so that the reaction chamber 10 has a low vacuum degree, and the pumping-out effect on volatile organic substances and moisture is weak.

Then, the second pump 23 is opened to perform strong pumping, the fluid flows through the second pump 23 and the first pump 22 after flowing out from the reaction chamber 10, the volatile organic substances and the moisture in the reaction chamber 10 are pumped out strongly under the strong pumping action of the second pump 23, and the interior of the reaction chamber 10 reaches a high vacuum degree. In the process of starting the second pump body 23, because the outlet side of the second pump body 23 is communicated with the inlet side of the first pump body 22, the opening of the first pump body 22 can reduce the load of the second pump body 23, and the second pump body 23 is prevented from being overloaded and being failed or stopped, so that the required vacuum degree cannot be reached.

The higher the vacuum degree is, the higher the power consumption of the pump body is, and the higher the power consumption is. In practical application, when the coating apparatus 100 is used for coating, the reaction substance in the reaction chamber 10 needs to be injected under the action of the air pumping system 20, and at this time, the first pump body 22 with low vacuum degree can be started to close the second pump body 23, so that the power consumption can be reduced while normal coating is ensured.

Above-mentioned coating equipment 100, through setting up the first pump body 22 that the vacuum is low and the second pump body 23 that the vacuum is high, can realize the requirement of higher vacuum through the second pump body 23, strengthen taking out of impurity such as volatile organic substance, moisture in the reaction chamber 10, improve the cleanliness factor of reaction chamber 10, reduce the impurity content in the film, improve the film quality of preparing. Meanwhile, the arrangement of the first pump body 22 can not only reduce the load of the second pump body 23, but also pre-pump air, so that the service life of the second pump body 23 is prolonged, and the second pump body 23 is prevented from being overloaded to influence vacuum pumping.

Moreover, when the coating device 100 is used for coating, the first pump body 22 with lower power consumption can be started to inject the reaction substance into the reaction chamber 10, so that the power consumption can be reduced while the normal coating is ensured.

In some embodiments, referring to fig. 1, the exhaust pipe valve assembly 21 includes a first pumping line 21a communicating the first pump body 22 with the exhaust portion 11, a second pumping line 21b communicating the second pump body 23 with the exhaust portion 11, a third pumping line 21c communicating the second pump body 23 with the first pump body 22, and a first pumping valve 21g disposed on the first pumping line 21a, a second pumping valve 21h disposed on the second pumping line 21b, and a third pumping valve 21i disposed on the third pumping line 21 c; the first bleed valve 21g, the second bleed valve 21h, and the third bleed valve 21i are configured to be able to respectively open or close a pipeline in which they are located when opened or closed.

The first, second and third bleed valves 21g, 21h, 21i can be solenoid valves, electrically operated valves, respectively, and can be of the type including, but not limited to, ball valves, butterfly valves, stop valves, diaphragm valves, gate valves, etc. When the first, second, and third bleed valves 21g, 21h, and 21i are opened, the pipelines in which they are located are turned on, and when the first, second, and third bleed valves 21g, 21h, and 21i are closed, the pipelines in which they are located are turned off.

Understandably, the first air extraction pipeline 21a and the second air extraction pipeline 21b are connected in parallel to one end of the exhaust portion 11, and both of them may be connected to the exhaust portion 11 independently or may be connected to the exhaust portion 11 through other pipelines. Likewise, the third suction line 21c may be connected directly/indirectly to the inlet side of the first pump body 22. The specific arrangement of the first suction line 21a, the second suction line 21b, and the third suction line 21c is not limited herein.

In practical application, when the coating apparatus 100 enters a vacuum-pumping stage, the first air-extracting valve 21g is first opened, the second air-extracting valve 21h and the third air-extracting valve 21i are closed, the exhaust portion 11 is only communicated with the first pump body 22, and the first pump body 22 is opened for pre-extraction, so that the fluid in the reaction chamber 10 can flow through the first air-extracting pipeline 21a and the first pump body 22 under the action of the first pump body 22 and is finally exhausted to the atmosphere. After the first pump 22 is started for a certain period of time, the interior of the reaction chamber 10 reaches a lower vacuum degree, at this time, the second pump 23, the second air extraction valve 21h and the third air extraction valve 21i are opened, the first air extraction valve 21g is closed, the second pump 23 is conducted with the exhaust portion 11, and the fluid in the reaction chamber 10 reaches the first pump 22 through the second air extraction pipeline 21b, the second pump 23 and the third air extraction pipeline 21c, and is finally exhausted to the atmosphere.

At this time, the first pump body 22 and the second pump body 23 can be used by controlling the opening and closing of the first air exhaust valve 21g, the second air exhaust valve 21h and the third air exhaust valve 21i, and the method is simple, convenient and easy to implement.

In some embodiments, referring to fig. 1, the exhaust pipe valve assembly 21 includes an exhaust main pipe 21d and a fourth air exhaust valve 21j, the first air exhaust pipe 21a and the second air exhaust pipe 21b are both connected to the exhaust portion 11 through the exhaust main pipe 21d, and the fourth air exhaust valve 21j is disposed on the exhaust main pipe 21d and configured to be capable of turning on or off the exhaust main pipe 21d when opened or closed.

Specifically, one end of each of the first suction line 21a and the second suction line 21b is connected to the exhaust main line 21d, the other end is connected to the inlet side of the first pump 22 and the inlet side of the second pump 23, and the third suction line 21c is connected to the outlet side of the second pump 23 and the inlet side of the first pump 22.

The fourth air bleed valve 21j is disposed on the exhaust main pipeline 21d, when the fourth air bleed valve 21j is opened, the exhaust main pipeline 21d is conducted, the fluid in the reaction chamber 10 can be discharged from the exhaust portion 11 to the first pump 22 or the second pump 23, when the fourth air bleed valve 21j is closed, the exhaust main pipeline 21d is cut off, and the fluid in the reaction chamber 10 cannot be discharged from the exhaust portion 11 to the first pump 22 or the second pump 23. In this way, when the first and second bleed valve members 21g and 21h, or the first and second pumps 22 and 23 fail or cannot be effectively controlled, the shutdown of the bleed system 20 can be controlled by the fourth bleed valve member 21j.

In some embodiments, the first pump body 22 is a dry pump and the second pump body 23 is a molecular pump or a condensate pump.

The dry pump is a pump which can start to extract air from atmospheric pressure and can directly discharge the extracted air to the atmosphere, the dry pump cavity does not contain oil or other working media, and the limit pressure of the dry pump is the same magnitude as or close to that of an oil-sealed vacuum pump. The dry pump may be in the form of a roots pump, a screw pump, a claw vacuum pump, or the like, and is not particularly limited.

The molecular pump is a vacuum pump which utilizes a rotor rotating at a high speed to transmit momentum to gas molecules so as to obtain a directional speed, and then the gas molecules are compressed and driven to an exhaust port and then are pumped away by a front stage, and can achieve a high vacuum degree under the cooperation of a dry pump, so that volatile substances, moisture and the like in the reaction cavity 10 are strongly pumped away, and the impurity removal effect in the reaction cavity 10 is good. The molecular pump can be a traction molecular pump, a turbo molecular pump and a composite molecular pump, and the specific type is not limited. A condensate pump (also called a cryopump) is a vacuum pump which condenses and adsorbs volatile substances and water vapor by using a low-temperature surface, and can obtain clean vacuum with high pumping efficiency and low limit pressure. The condensing pump can be an injection type liquid helium condensing pump, a closed-loop circulating gas helium refrigerator condensing pump and the like, and the specific selection type is not limited.

The dry pump has low operation cost, the molecular pump and the condenser pump have obvious vacuum effect, and the cooperation of the dry pump and the condenser pump not only enables the reaction chamber 10 to have high vacuum degree, but also enables the operation cost of the air pumping system 20 to be low when the coating equipment 100 is used for coating.

In some embodiments, referring to fig. 1, the reaction chamber 10 further has a gas inlet portion 12, and the coating apparatus 100 further includes a gas inlet valve assembly 30, wherein the gas inlet portion 12 is configured to independently communicate with the precursor supply source 200, the first reaction gas supply source 300 and the plasma generating device 70 respectively through the gas inlet valve assembly 30, and the plasma generating device 70 is configured to provide the second reaction gas in a plasma state.

The precursor supply source 200, the first reaction gas supply source 300 and the plasma generating device 70 are respectively used for providing a precursor, a first reaction gas and a second reaction gas in a plasma state. Wherein, the second reactive gas forms a plasma state under the excitation of the plasma generating device 70, enters the reaction chamber 10, and reacts with the substance in the reaction chamber 10. The specific types of the precursor, the first reactive gas and the second reactive gas are conventional in the art, and are different according to the type of the thin film to be produced, and the specific types of the precursor, the first reactive gas and the second reactive gas are not limited and described herein.

The intake portion 12 may be an intake port, an intake valve, an intake pipe, or the like. The precursor supply source 200, the first reactive gas supply source 300, and the plasma generator 70 are independently communicated with the gas inlet 12 to independently supply the reactive materials (including the precursor, the first reactive gas, and the second reactive gas).

The gas inlet valve assembly 30 includes a gas inlet pipeline and a gas inlet valve disposed on the gas inlet pipeline, the gas inlet pipeline is used as an intermediary for connecting the gas inlet portion 12 with the precursor supply source 200, the first reaction gas supply source 300 and the plasma generation device 70, and is used for allowing each reaction substance to enter the reaction chamber 10, and the gas inlet valve disposed on the gas inlet pipeline is used for cutting off or conducting the flow of the fluid in the pipeline. Understandably, the intake pipe valve assembly 30 has various configurations, and is a conventional arrangement in the art, and is not limited thereto.

In practice, a precursor (e.g., vaporized aluminum) and a first reactive gas are deposited on a substrate in the reaction chamber 10 to form a thin film article. When the precursor and the first reaction gas are introduced (i.e., before the coating process), the second reaction gas in the plasma state can be conveyed into the reaction chamber 10, and the substrate can be pretreated by using the second reaction gas in the plasma state, so that the adhesion and the blocking effect of the precursor in the chamber on the substrate are improved, and the uniformity of the precursor is improved. During the plasma pretreatment process, the substrate surface is cleaned and activated, i.e., the substrate surface is chemically modified, resulting in a more robust attachment of atoms of the precursor (e.g., aluminum metal).

After the coating process is completed, the second reaction gas in the plasma state can also be fed into the reaction chamber 10, and the second reaction gas in the plasma state reacts with the surface of the film, so that the surface of the film is more homogenized and leveled, and the surface quality of the film can be improved. Meanwhile, the second reaction gas in a plasma state can dope the film, change the element composition of the film and regulate and control the property of the film.

In the embodiment of fig. 1, the intake valve assembly 30 includes a first intake line 31, a second intake line 32, a third intake line 33, a first intake valve 34, a second intake valve 35, and a third intake valve 36. The first gas inlet line 31 is used for connecting the gas inlet 12 and the precursor supply 200, and the first gas inlet valve 34 is disposed on the first gas inlet line 31. The second intake pipe 32 is used to connect the intake portion 12 and the first reactant gas supply source 300, and the second intake valve 35 is provided on the second intake pipe 32. The third air inlet pipe 33 is used for connecting the air inlet portion 12 and the plasma generating device 70, and the third air inlet valve member 36 is disposed on the third air inlet pipe 33. The introduction of the precursor, the first reactive gas and the second reactive gas into the gas inlet portion 12 can be controlled by controlling the opening and closing of the first gas inlet valve element 34, the second gas inlet valve element 35 and the third gas inlet valve element 36.

The plasma generation device 70 is connected to a second reactive gas supply source, the second reactive gas supply source supplies non-ionized second reactive gas to the plasma generation device 70, and the non-ionized second reactive gas is ionized into second reactive gas in a plasma state by excitation of the plasma generation device 70. As for the plasma generating device 70, it is conventional in the art, and the detailed structure thereof will not be described herein.

In some embodiments, referring to fig. 1, the exhaust pipe valve assembly 21 includes a first bypass 21e, one end of the first bypass 21e is connected to the exhaust portion 11, and the other end is connected between the inlet sides of the first pump body 22. The coating apparatus 100 further includes a first monitoring device 40 disposed on the first bypass 21e, wherein the first monitoring device 40 is configured to obtain a first gas flow characteristic of the gas flowing through the first monitoring device for monitoring the coating status in the reaction chamber 10.

The first bypass 21e connects the exhaust unit 11 and the inlet side of the first pump 22, and when the first pump 22 is opened, the fluid in the reaction chamber 10 can flow to the inlet side of the first pump 22 through the first bypass 21 e. When the fluid in the reaction chamber 10 flows through the first bypass 21e, it will pass through the first monitoring device 40 and be captured by the first monitoring device 40 for the first gas flow characteristic. Specifically, the first bypass 21e may be provided with a first bypass valve 21k, and the first bypass valve 21k may open and close the first bypass 21e when opened and closed, and the first bypass valve 21k may be provided between the exhaust portion 11 and the first monitoring device 40.

The first monitoring device 40 can obtain the content of the first reaction gas, the content of the second reaction gas, the content of the precursor, the content of other reaction products, and the like in the fluid discharged from the reaction chamber 10, and accordingly can be used to determine the progress of the plating reaction, the progress of the pre-treatment/post-treatment, and the progress of the plating reaction.

The type of the first monitoring device 40 is not limited, and can be flexibly set according to actual requirements. The first airflow characteristic differs depending on the type of the first monitoring device 40.

For example, the first monitoring device 40 may include a QCM (Quartz Crystal Microbalance) device (i.e., a Quartz Crystal Microbalance sensor) which detects the variation of the output frequency by using the piezoelectric effect of the Quartz Crystal and calculates the mass of the fine substance attached to the surface of the QCM Crystal, thereby determining the solid substance content of the fluid, in which the solid substance is each reactant (reaction product generated by the reaction of the precursor and the first reaction gas) flowing out of the reaction chamber. At this time, the first gas flow characteristic is a mass characteristic of a reaction product in the fluid flowing through the QCM device, which is obtained by the QCM device, and the mass of the reaction product is in positive correlation with the mass of the reaction product (e.g., alumina deposited on the substrate) in the reaction chamber 10. The reaction product content in the reaction chamber 10 is higher as the mass of the adhering substance represented by the mass characteristic is larger. Therefore, the content change of the solid substance attached to the substrate during coating can be monitored, and the coating state in the reaction chamber 10 can be further monitored.

Further, for example, the first monitoring device 40 may further include an RGA (Residual Gas Analysis) Residual Gas analyzing device, which ionizes Gas molecules in the vacuum chamber by using an RGA ion differentiator, and the ionized charged ions enter into a deflection electric field generated inside, wherein different ion mass numbers are different, and deflection radiuses formed under the action of the electric field are different, so that the concentrations of the ions with different mass numbers can be detected. At this time, the first gas flow characteristic obtained by the RGA residual gas analyzer may be a characteristic representing ion concentrations of the first reaction gas, the second reaction gas, and the precursor that do not participate in the reaction, and further obtain the content of the first reaction gas, the second reaction gas, and the precursor that do not participate in the reaction. Thus, the state of the coating film can be detected by detecting the concentration of each reactive ion.

The arrangement of the first monitoring device 40 is convenient for relevant personnel to monitor the coating process, and the abnormality of the coating process in the reaction chamber 10 can be found in time.

In some embodiments, referring to fig. 1, the exhaust pipe valve assembly 21 includes a second bypass 21f, one end of the second bypass 21f is connected to the exhaust portion 11, and the other end is connected between the inlet sides of the first pump body 22. The plating apparatus 100 further includes a second monitoring device 50 disposed in the second bypass 21f, and the second monitoring device 50 is configured to acquire a second gas flow characteristic of the gas flowing through itself for monitoring the cleaning state in the reaction chamber 10.

The second bypass 21f connects the exhaust unit 11 and the inlet side of the first pump 22, and when the first pump 22 is opened, the fluid in the reaction chamber 10 can flow to the inlet side of the first pump 22 through the second bypass 21f. When the fluid in the reaction chamber 10 flows through the second bypass 21f, it will pass through the second monitoring device 50 and be captured by the second monitoring device 50 for the second gas flow characteristic. Specifically, the second bypass valve 21m is disposed on the second bypass 21f, the second bypass valve 21m is disposed between the exhaust portion 11 and the second monitoring device 50, and the second bypass valve 21f can be opened or closed when the second bypass valve 21m is opened or closed.

The cleaning of the reaction chamber 10 may be performed by, but not limited to, introducing the second reaction gas in a plasma state into the reaction chamber 10, or introducing other cleaning means, and is not particularly limited. When the second reaction gas in the plasma state is used for cleaning, the second reaction gas reacts with the attachment film on the inner wall of the reaction chamber 10 to be gasified, so that the gasified attachment and the insufficiently reacted second reaction gas can pass through the second monitoring device 50 and the second monitoring device 50 obtains the second gas characteristics thereof.

The second gas characteristic may be a content characteristic of the deposit or a content characteristic of the second reactive gas. When the second gas characteristic is the content characteristic of the attachments and the second gas characteristic indicates that the content characteristic is lower than the set threshold, it indicates that the cleaning tail is close and the reaction chamber 10 is cleaned, and then the corresponding operation can be stopped to finish the cleaning of the reaction chamber 10, so that the transitional etching is reduced and the damage to the surface of the chamber body is avoided.

When the second gas characteristic value is the content characteristic of the second reaction gas and the corresponding content of the second gas characteristic is higher than the set threshold, it indicates that the cleaning tail is close and the reaction chamber 10 is cleaned, the corresponding operation can be stopped to finish the cleaning of the reaction chamber 10, so that the transitional etching is reduced and the damage to the surface of the chamber body is avoided.

The second monitoring device 50 may be a gas composition monitor or an EPD (Endpoint Detector) device (i.e., end point etching device), and the specific principle and structure of the EPD device are not described herein.

At this time, the second monitoring device 50 can monitor the cleaning state of the reaction chamber 10, determine the cleaning end point, reduce the transitional etching, and avoid damaging the surface of the reaction chamber 10.

In some embodiments, referring to fig. 1, the coating apparatus 100 further includes a particle trap 60, wherein the particle trap 60 is disposed on the inlet side of the first pump 22 and disposed on the flow path of all the fluid entering the first pump 22.

The particle trap 60 is a filter capable of filtering out tiny particles (even liquid substances) in the air flow, and preventing the tiny particles (even liquid substances) from entering the first pump body 22 and damaging the first pump body 22.

The particle trap 60 may be a ceramic filter, a screen filter, an electrostatic filter, a gas permeable membrane device, or the like, and the specific form is not limited as long as it can adsorb fine particles (even liquid substances).

In this case, the particle trap 60 may be configured to filter the fluid before the fluid enters the first pump body 22, which may increase the useful life of the first pump body 22.

Specifically, the first suction line 21a may include a first-stage line a1 and a second-stage line a2, the first-stage line a1 and the second-stage line a2 are communicated with each other via the particle trap 60, the first-stage line a1 is communicated with the exhaust portion 11, and the second-stage line a2 is communicated with the inlet side of the first pump body 22. Further, the third suction line 21c, the first bypass 21e, and the second bypass 21f are all in communication with the first pump body 22 via the particle trap 60.

Based on the same invention, the embodiment of the application also provides a control method of the coating device 100. Referring to fig. 2, the control method of the coating apparatus 100 includes:

when entering the vacuum-pumping stage, executing step 10: successively executing a first air extraction operation and a second air extraction operation;

the first pumping operation comprises: the first pump body 22 is communicated with the exhaust part 11 of the reaction cavity 10, the second pump body 23 and the exhaust part 11 are cut off, and the first pump body 22 is started;

the second pumping operation includes: the second pump body 23 and the exhaust portion 11, and the second pump body 23 and the first pump body 22 are conducted, and the first pump body 22 and the second pump body 23 are started.

The adaptive object of the control method may be the coating apparatus 100 described in the above embodiment, and for the structure of the coating apparatus 100, please refer to the description of the above embodiment, which is not repeated herein. The main body for executing the control method can be control equipment (such as a microprocessor, a computer, an industrial personal computer, a single chip microcomputer and the like) on the coating equipment 100.

Wherein, the first pumping operation may specifically be: the first bleed valve member 21g is opened and the second and third bleed valve members 21h, 21i are closed, while the first pump body 22 is actuated. Of course, when the exhaust pipe valve assembly 21 of the film coating apparatus 100 includes the exhaust main pipe 21d and the fourth air exhaust valve 21j, the fourth air exhaust valve 21j is opened synchronously. In the first suction operation, whether the second pump body 23 is activated or not is not limited.

When the first pumping operation is performed, the exhaust portion 11 is conducted to the first cylinder 22 and is blocked from the second cylinder 23, and the flow path of the fluid in the reaction chamber 10 is: the exhaust portion 11 to the first pump body 22. At this time, the first pump body 22 can pre-pump the reaction chamber 10. Since the vacuum degree of the first pump body 22 is low, the reaction chamber 10 is made to reach a low vacuum degree, and the pumping effect on the volatile organic substances and the moisture is weak.

Wherein, the second pumping operation may specifically be: the second and third bleed valves 21h, 21i are opened and the first bleed valve 21g is closed, while the first and second pumps 22, 23 are actuated. Of course, when the exhaust pipe valve assembly 21 of the coating apparatus 100 includes the exhaust main pipe 21d and the fourth air exhaust valve 21j, the fourth air exhaust valve 21j is opened synchronously.

When the second pumping operation is performed, the exhaust portion 11 is conducted to the second pump 23, the second pump 23 is conducted to the first pump 22, and the flow path of the fluid in the reaction chamber 10 is: from the exhaust 11 to the second pump body 23 and then to the first pump body 22. At this time, the second pump 23 can forcibly evacuate the reaction chamber 10. In the process of starting the second pump body 23, because the outlet side of the second pump body 23 is communicated with the inlet side of the first pump body 22, the opening of the first pump body 22 can reduce the load of the second pump body 23, and avoid the second pump body 23 from being overloaded to break down or stop, and further cannot reach the required vacuum degree.

In the control method of the coating device 100, the first pump 22 with a low vacuum degree is started to pre-pump the reaction chamber 10, so that the reaction chamber 10 reaches a low vacuum degree. Then, the second pump body 23 with high vacuum degree is started to perform strong air extraction on the reaction chamber 10, so that the extraction of impurities such as volatile organic substances, moisture and the like in the reaction chamber 10 is enhanced, the requirement of high vacuum degree can be realized, the cleanliness of the reaction chamber 10 is improved, the impurity content in the film is reduced, and the quality of the prepared film is improved. Meanwhile, the arrangement of the first pump body 22 can not only reduce the load of the second pump body 23, but also pre-pump air, so that the service life of the second pump body 23 is prolonged, and the second pump body 23 is prevented from being overloaded to influence vacuum pumping.

It is understood that the degree of vacuum in the reaction chamber 10 after the first pumping operation is lower than the degree of vacuum in the reaction chamber 10 after the second pumping operation.

It should be noted that the condition for switching the control device from the first pumping operation to the second pumping operation may be that the first pumping operation reaches a set execution time, or that the vacuum degree in the reaction chamber 10 reaches a preset low vacuum degree. The condition for switching the control device from the second pumping operation to the third pumping operation may be that the second pumping operation reaches a set execution time, or that the vacuum degree in the reaction chamber 10 reaches a preset higher vacuum degree.

In some embodiments, referring to fig. 3, step 10 further includes: after the second air pumping operation, executing a third air pumping operation;

the third pumping operation comprises: the first pump 22 and the exhaust portion 11 are turned on, the second pump 23 and the exhaust portion 11 are turned off, the first pump 22 is started, and the second pump 23 is closed.

Wherein, the third pumping operation may specifically be: the first bleed valve 21g is opened and the second 21h and third 21i bleed valves are closed, while the first pump 22 is actuated and the second pump 23 is closed. Of course, when the exhaust pipe valve assembly 21 of the coating apparatus 100 includes the exhaust main pipe 21d and the fourth air exhaust valve 21j, the fourth air exhaust valve 21j is opened synchronously.

When the third pumping operation is performed, the first pump 22 is opened, the second pump 23 is closed, the exhaust portion 11 is connected to the first pump 22 and is disconnected from the second pump 23, and the flow path of the fluid in the reaction chamber 10 is: the exhaust portion 11 to the first pump body 22. At this time, the first pump 22 can continuously pump the reaction chamber 10, which helps to maintain the vacuum degree in the sensing chamber. Since the first pump body 22 has a low degree of vacuum, its power consumption is low, and the operation cost of the plating device 100 is low.

When the control device is in the third pumping operation, it usually indicates that the coating device is about to enter the coating stage or is in the coating stage, or is about to enter the cleaning stage, or is in the cleaning stage.

During the third pumping operation, the first pump body 22 is continuously started to maintain the pumping at a lower intensity in the corresponding reaction chamber 10, so that the reaction time of the reaction substance in the chamber can be prolonged in the coating stage and the cleaning stage to ensure the coating effect/cleaning effect and the fluidity of the reaction substance.

In some embodiments, referring to fig. 4, the method for controlling the coating apparatus 100 further includes:

when entering the film coating stage, the step 20 is executed: synchronously executing a third air pumping operation and an air supplying operation;

the air supply operation comprises a coating air supply operation, a pretreatment air supply operation and/or a post-treatment air supply operation, wherein the pretreatment air supply operation is executed before the coating air supply operation, and the post-treatment air supply operation is executed after the coating air supply operation;

the coating air supply operation comprises: the gas inlet part 12 and the precursor supply source 200 of the reaction chamber 10, and the gas inlet part 12 and the first reaction gas supply source 300 are conducted in sequence;

the pre-treatment gas supply operation and the post-treatment gas supply operation both comprise: the gas inlet portion 12 and the plasma generator 70 are conducted.

It is understood that the coating apparatus 100 enters the coating stage after entering the vacuum-pumping stage.

For the third pumping operation, the above description is referred to, and is not repeated herein.

Wherein, the operation of filming air supply can be specifically as follows: the first intake valve member 34 is opened for a certain time and then the second intake valve member 35 is opened for a certain time. When the first air inlet valve 34 is opened, the precursor enters the air inlet portion 12 from the first air inlet pipeline 31, and then enters the reaction chamber 10, the first air inlet valve 34 is kept opened for a certain time, and the precursor is fully plated on the substrate. When the second gas inlet valve 35 is opened, the first reaction gas enters the gas inlet portion 12 from the second gas inlet pipe 32, and then enters the reaction chamber 10, the second gas inlet valve 35 is kept opened for a certain time, and the first reaction gas reacts with the precursor plating layer of the substrate. Thus, the production of the film was completed.

Wherein, the pretreatment air supply operation may specifically be: the third air inlet valve member 36 is opened. When the third air inlet valve 36 is opened before the operation of supplying air for coating, the second reaction gas in a plasma state enters the reaction chamber 10 through the air inlet part 12 to modify the surface of the substrate, activate the surface of the substrate, enhance the adhesion and blocking effect of the precursor on the substrate, improve the uniformity of the precursor, and make the atoms of the precursor (such as aluminum metal) adhere more firmly.

Wherein, the post-treatment air supply operation can be specifically as follows: the third air intake valve element 36 is opened. When the third gas inlet valve 36 is opened after the film coating gas supplying operation, the second reaction gas in the plasma state entering the reaction chamber 10 reacts with the surface of the film, so that the surface of the film is more uniform and flat, and the surface quality of the film can be improved. Meanwhile, the second reaction gas in a plasma state can dope the film, change the element composition of the film and regulate the property of the film.

It is understood that the first, second and third intake valve members 34, 35, 36 open asynchronously.

In some embodiments, referring to fig. 4, the method for controlling the coating apparatus 100 further includes:

when entering the coating stage, the step S30 is also executed: performing coating monitoring operation;

the coating monitoring operation comprises:

conducting the exhaust part 11 and the first monitoring device 40, and acquiring a first airflow characteristic acquired by the first monitoring device 40;

and judging the film coating state in the reaction chamber 10 according to the first air flow characteristic.

For the description of the first monitoring device 40, please refer to the above description, and will not be repeated herein.

The steps of conducting the exhaust unit 11 and the first monitoring device 40 may be specifically: the first bypass valve 21k is opened. The first bypass valve 21k is provided on the first bypass 21e, and is provided between the exhaust portion 11 and the first monitoring device 40. When the first bypass valve 21k is opened, the exhaust portion 11 and the first monitoring device 40 are communicated through the first bypass 21e, and the fluid in the exhaust portion 11 enters the first monitoring device 40, so that the first monitoring device 40 obtains the first airflow characteristic.

The control device is communicatively coupled to the first monitoring device 40 and is capable of obtaining the first airflow characteristic from the first monitoring device 40. The control device judges the film coating state in the reaction chamber 10 according to the first air flow characteristic.

When the first monitoring device 40 includes the RGA residual gas analyzing device, the control apparatus may obtain the content characteristic of the second reactive gas in the first gas flow characteristic detected by the RGA residual gas analyzing device to determine the coating state in the reaction chamber 10. For example, when the content characteristic of the second reactive gas in the first gas flow characteristic is higher than a set threshold value, it is determined that the pre-treatment gas supply operation/post-treatment gas supply operation reaches an end point, and the operation is switched from the pre-treatment gas supply operation to the plating gas supply operation, or the operation of the plating apparatus 100 is stopped from being switched from the post-treatment gas supply operation.

When the first monitoring device 40 includes a QCM device, the control device may further obtain the mass characteristics of the reaction product in the first gas flow characteristics detected by the QCM device to determine the coating state in the reaction chamber 10. For example, when the mass characteristic of the reaction product detected by the QCM device is higher than the corresponding set threshold, it is determined that the coating gas supply operation has reached the end point, i.e., that the post-treatment gas supply operation can be switched from the coating gas supply operation.

At this moment, the coating stage is monitored by the first monitoring device 40 in the coating stage, so that the monitoring of the coating process by related personnel is facilitated, and the coating process in the reaction chamber 10 can be found in time when being abnormal. And the automatic switching of the control equipment between the operations can be facilitated.

In some embodiments, referring to fig. 5, the method for controlling the coating apparatus 100 further includes:

when entering the cleaning phase, step S40 is executed: performing a third pumping operation and a cleaning operation;

the cleaning operation comprises: the gas inlet 12 of the reaction chamber 10 and the plasma generator 70 are conducted.

The coating apparatus 100 may enter the cleaning stage after entering the vacuum-pumping stage, and may directly enter the cleaning stage when starting up. Specifically, the coating apparatus 100 may directly enter the cleaning stage after entering the primary coating stage, or may enter the cleaning stage after entering the multiple coating stages.

And performing third air extraction operation in the cleaning stage, and continuously filling the second reaction gas in a plasma state in the cleaning process.

Wherein, the cleaning operation may specifically be: the third air inlet valve member 36 is opened. When the third gas inlet valve 36 is opened in the cleaning stage, the second reaction gas in the plasma state entering the reaction chamber 10 reacts with the attachments on the inner wall of the reaction chamber 10, so that the attachments are decomposed and gasified, and flow out of the reaction chamber 10 along with the gas flow.

At this time, the active plasma is introduced to clean the attachments accumulated in the reaction chamber 10 in the cleaning stage, so that the accumulated thickness of the attachments can be effectively reduced, the generation of particles in the reaction chamber 10 can be reduced, and the service life of the reaction chamber 10 can be prolonged.

In some embodiments, referring to fig. 6, step S40 further includes: executing a cleaning monitoring operation:

the cleaning monitoring operation includes:

conducting the exhaust part 11 and the second monitoring device 50, and acquiring a second air flow characteristic acquired by the second monitoring device 50;

when the second gas flow characteristic indicates that the reaction chamber 10 is completely cleaned, the cleaning operation is stopped.

For the description of the second monitoring device 50, please refer to the above description, which is not repeated herein.

The steps of conducting the exhaust unit 11 and the second monitoring device 50 may be specifically: the second bypass valve element 21m is opened. A second bypass valve element 21m is provided in the second bypass 21f, and the second bypass valve element 21m is provided between the exhaust portion 11 and the second monitoring device 50. When the second bypass valve 21m is opened, the exhaust portion 11 and the second monitoring device 50 are communicated through the second bypass 21f, and the fluid in the exhaust portion 11 enters the second monitoring device 50, so that the second monitoring device 50 obtains a second airflow characteristic.

The control device is communicatively coupled to the second monitoring device 50 and is capable of obtaining a second airflow characteristic from the second monitoring device 50. The control device judges the cleaning state in the reaction chamber 10 according to the second gas flow characteristic.

Specifically, the control device may determine that the cleaning operation reaches the cleaning end point when the content of the second reactive gas reflected in the second gas flow characteristic is higher than the set threshold, and may stop the cleaning operation.

Specifically, the control device may further determine that the cleaning operation reaches the cleaning end point when the content of the deposits reflected in the second airflow characteristic is lower than the corresponding set threshold, and may stop the cleaning operation.

At this moment, the cleaning stage is monitored by the second monitoring device 50, so that the cleaning progress can be conveniently monitored by related personnel, the cleaning end point can be judged, transitional etching is reduced, and the surface of the reaction chamber 10 is prevented from being damaged.

It will be understood that the actuation of the second pump 23 occurs only during the evacuation phase, and that the flow of the gas flow inside the reaction chamber 10 is achieved by the first pump 22 during the coating phase and during the cleaning phase.

According to the coating equipment 100 and the control method thereof, the first pump body 22 with low vacuum degree and the second pump body 23 with high vacuum degree are arranged, and the requirement of higher vacuum degree can be met through the second pump body 23, so that the extraction of impurities such as volatile organic substances, moisture and the like in the reaction chamber 10 is enhanced, the cleanliness of the reaction chamber 10 is improved, the content of impurities in a film is reduced, and the quality of the prepared film is improved. Meanwhile, the arrangement of the first pump body 22 can not only reduce the load of the second pump body 23, but also pre-pump air, so that the service life of the second pump body 23 is prolonged, and the second pump body 23 is prevented from being overloaded to influence vacuum pumping.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (14)

1. A plating apparatus, characterized by comprising:

a reaction chamber having an exhaust portion;

the exhaust system comprises an exhaust pipe valve assembly, a first pump body and a second pump body, wherein the inlet side of the first pump body and the inlet side of the second pump body are both connected to the exhaust part through the exhaust pipe valve assembly, and the outlet side of the first pump body is communicated with the atmosphere;

wherein a vacuum degree of the second pump is greater than a vacuum degree of the first pump, and an outlet side of the second pump is connected to an inlet side of the first pump via the exhaust pipe valve assembly.

2. The plating apparatus according to claim 1,

the exhaust pipe valve assembly includes:

a first air extraction pipeline for communicating the first pump body and the exhaust part,

A second air extraction pipeline for communicating the second pump body with the exhaust part,

A third air pumping pipeline for communicating the second pump body and the first pump body,

the first air extraction valve is arranged on the first air extraction pipeline, the second air extraction valve is arranged on the second air extraction pipeline, and the third air extraction valve is arranged on the third air extraction pipeline;

the first air extraction valve, the second air extraction valve and the third air extraction valve are all configured to be capable of respectively conducting or stopping a pipeline in which the first air extraction valve, the second air extraction valve and the third air extraction valve are arranged when being opened and closed.

3. The plating device according to claim 2,

the exhaust pipe valve assembly comprises an exhaust main pipeline and a fourth air pumping valve member, the first air pumping pipeline and the second air pumping pipeline are communicated with the exhaust part through the exhaust main pipeline,

the fourth bleed valve is disposed in the exhaust main pipe and configured to be capable of respectively turning on or off the exhaust main pipe when opened or closed.

4. The plating device according to claim 1,

the first pump body is a dry pump, and the second pump body is a molecular pump or a condensate pump.

5. The plating apparatus according to claim 1, wherein the reaction chamber further has a gas inlet portion; the coating equipment also comprises an air inlet pipe valve component;

the gas inlet portion is configured to independently communicate with a precursor supply source, a first reaction gas supply source and a plasma generation device for providing a second reaction gas in a plasma state, respectively, via the gas inlet pipe valve assembly.

6. The plating device according to claim 1,

the exhaust pipe valve assembly includes a first bypass having one end connected to the exhaust portion and the other end connected between the inlet sides of the first pump bodies;

the coating equipment further comprises a first monitoring device arranged on the first bypass, and the first monitoring device is configured to be capable of acquiring first airflow characteristics of gas flowing through the first monitoring device so as to be used for monitoring the coating state in the reaction cavity.

7. The plating device according to claim 1,

the exhaust pipe valve assembly includes a second bypass having one end connected to the exhaust portion and the other end connected between the inlet sides of the first pump bodies;

the coating equipment further comprises a second monitoring device arranged on the second bypass, and the second monitoring device is configured to be capable of acquiring a second gas flow characteristic of gas flowing through the second monitoring device so as to be used for monitoring the cleaning state in the reaction cavity.

8. The plating device according to claim 1,

the coating device further comprises a particle catcher, which is arranged on the inlet side of the first pump body and is arranged on the flow path of all the fluid entering the first pump body.

9. A control method of a coating apparatus, characterized by comprising:

when entering the vacuum-pumping stage, executing the step 10: the first air extraction operation and the second air extraction operation are executed successively;

the first pumping operation comprises: the first pump body and the exhaust part of the reaction cavity are conducted, the second pump body and the exhaust part are cut off, and the first pump body is started;

the second pumping operation comprises: and switching on the second pump body and the exhaust part and the second pump body and the first pump body, and starting the first pump body and the second pump body.

10. The plating device controlling method according to claim 9,

the step 10 further comprises: after the second air pumping operation, executing a third air pumping operation;

the third pumping operation comprises: and switching on the first pump body and the exhaust part, switching off the second pump body and the exhaust part, starting the first pump body and closing the second pump body.

11. The method for controlling a plating apparatus according to claim 10, further comprising:

when entering the film coating stage, the step 20 is executed: synchronously executing the third air pumping operation and the air supply operation;

the gas supply operation comprises a coating gas supply operation, a pretreatment gas supply operation and/or a post-treatment gas supply operation, wherein the pretreatment gas supply operation is executed before the coating gas supply operation, and the post-treatment gas supply operation is executed after the coating gas supply operation;

the coating air supply operation comprises: sequentially conducting a gas inlet part and a precursor supply source of the reaction chamber, and the gas inlet part and a first reaction gas supply source;

the pre-treatment air supply operation and the post-treatment air supply operation both comprise: and conducting the gas inlet part and the plasma generating device.

12. The method for controlling a plating apparatus according to claim 11, further comprising:

when entering the film coating stage, the step S30 is also executed: performing a coating monitoring operation;

the coating monitoring operation comprises:

conducting the exhaust part and the first monitoring device, and acquiring first airflow characteristics acquired by the first monitoring device;

and judging the film coating state in the reaction cavity according to the first air flow characteristic.

13. The method for controlling a plating apparatus according to claim 10, further comprising:

when the cleaning phase is entered, step S40 is executed: performing the third pumping operation and the cleaning operation;

the cleaning operation comprises: and the gas inlet part of the reaction cavity and the plasma generating device are communicated.

14. The plating device controlling method according to claim 13,

the step S40 further includes: executing a cleaning monitoring operation:

the cleaning monitoring operation includes:

conducting the exhaust part and a second monitoring device, and acquiring a second air flow characteristic acquired by the second monitoring device;

and stopping the cleaning operation when the second gas flow characteristic indicates that the cleaning of the reaction cavity is finished.

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