CN115677386A - 一种用于制备半导体材料的石墨部件及其复合涂层和制备方法 - Google Patents
一种用于制备半导体材料的石墨部件及其复合涂层和制备方法 Download PDFInfo
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- CN115677386A CN115677386A CN202211568619.3A CN202211568619A CN115677386A CN 115677386 A CN115677386 A CN 115677386A CN 202211568619 A CN202211568619 A CN 202211568619A CN 115677386 A CN115677386 A CN 115677386A
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- graphite
- composite coating
- coating
- reaction chamber
- transition layer
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 92
- 239000010439 graphite Substances 0.000 title claims abstract description 92
- 238000000576 coating method Methods 0.000 title claims abstract description 79
- 239000011248 coating agent Substances 0.000 title claims abstract description 78
- 239000002131 composite material Substances 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000007704 transition Effects 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 31
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910003468 tantalcarbide Inorganic materials 0.000 claims abstract description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 29
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 6
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical group Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 4
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 4
- 238000002309 gasification Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000003575 carbonaceous material Substances 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000010790 dilution Methods 0.000 abstract description 4
- 239000012895 dilution Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
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CN202211568619.3A CN115677386B (zh) | 2022-12-08 | 2022-12-08 | 一种用于制备半导体材料的石墨部件及其复合涂层和制备方法 |
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CN202211568619.3A CN115677386B (zh) | 2022-12-08 | 2022-12-08 | 一种用于制备半导体材料的石墨部件及其复合涂层和制备方法 |
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CN115677386A true CN115677386A (zh) | 2023-02-03 |
CN115677386B CN115677386B (zh) | 2023-05-12 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5498442A (en) * | 1993-06-01 | 1996-03-12 | Advanced Ceramics Corporation | Fluidized bed reactor and method for forming a metal carbide coating on a substrate containing graphite or carbon |
WO2006085635A1 (ja) * | 2005-02-14 | 2006-08-17 | Toyo Tanso Co., Ltd. | 炭化タンタル被覆炭素材料およびその製造方法 |
CN105439645A (zh) * | 2015-12-25 | 2016-03-30 | 苏州宏久航空防热材料科技有限公司 | 一种用于石墨热场表面的复合涂层及其制备方法 |
CN107742603A (zh) * | 2017-10-19 | 2018-02-27 | 西安黄河光伏科技股份有限公司 | 一种晶硅太阳电池石墨舟及其饱和处理方法 |
CN113549895A (zh) * | 2021-07-12 | 2021-10-26 | 北京钽途新材料科技有限公司 | 在石墨基材表面制备碳化钽涂层的方法及石墨器件 |
CN115108852A (zh) * | 2022-07-26 | 2022-09-27 | 湖南泰坦未来科技有限公司 | 一种石墨复合材料及其制备方法和应用 |
-
2022
- 2022-12-08 CN CN202211568619.3A patent/CN115677386B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5498442A (en) * | 1993-06-01 | 1996-03-12 | Advanced Ceramics Corporation | Fluidized bed reactor and method for forming a metal carbide coating on a substrate containing graphite or carbon |
WO2006085635A1 (ja) * | 2005-02-14 | 2006-08-17 | Toyo Tanso Co., Ltd. | 炭化タンタル被覆炭素材料およびその製造方法 |
CN105439645A (zh) * | 2015-12-25 | 2016-03-30 | 苏州宏久航空防热材料科技有限公司 | 一种用于石墨热场表面的复合涂层及其制备方法 |
CN107742603A (zh) * | 2017-10-19 | 2018-02-27 | 西安黄河光伏科技股份有限公司 | 一种晶硅太阳电池石墨舟及其饱和处理方法 |
CN113549895A (zh) * | 2021-07-12 | 2021-10-26 | 北京钽途新材料科技有限公司 | 在石墨基材表面制备碳化钽涂层的方法及石墨器件 |
CN115108852A (zh) * | 2022-07-26 | 2022-09-27 | 湖南泰坦未来科技有限公司 | 一种石墨复合材料及其制备方法和应用 |
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Address after: 518000 office building 307, Jiancang technology R & D plant, Tantou community, Songgang street, Bao'an District, Shenzhen, Guangdong Province Applicant after: Shenzhen Zhicheng Semiconductor Materials Co.,Ltd. Address before: 518000 office building 307, Jiancang technology R & D plant, Tantou community, Songgang street, Bao'an District, Shenzhen, Guangdong Province Applicant before: SHENZHEN ZHICHENG SEMICONDUCTOR MAT Co.,Ltd. |
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Inventor after: Yang Weifeng Inventor after: Huang Yupeng Inventor after: Jin Caixia Inventor after: Zhu Baixi Inventor before: Yang Weifeng Inventor before: Huang Yupeng |