CN115662955A - Packaging device and packaging method based on thermoelectric coupling - Google Patents
Packaging device and packaging method based on thermoelectric coupling Download PDFInfo
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- CN115662955A CN115662955A CN202211216140.3A CN202211216140A CN115662955A CN 115662955 A CN115662955 A CN 115662955A CN 202211216140 A CN202211216140 A CN 202211216140A CN 115662955 A CN115662955 A CN 115662955A
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Abstract
The invention provides a packaging device and a packaging method based on thermoelectric coupling, wherein the packaging device comprises: a packaging assembly and a refrigeration assembly; the packaging assembly comprises a packaging tube shell and a cover plate, the packaging tube shell is provided with an accommodating cavity, the accommodating cavity is used for placing an electronic component, one end of the packaging tube shell is arranged in an opening, and the cover plate covers the opening; a metal sealing layer is clamped between the opposite surfaces of the packaging tube shell and the cover plate, and part of the metal sealing layer is exposed out of the cover plate; the refrigeration subassembly is located the one end that the encapsulation tube deviates from the apron, and the refrigeration subassembly can absorb the heat of encapsulation tube for encapsulation tube department forms temperature gradient, so that encapsulation tube and apron pass through the bonding of metal seal layer under temperature gradient. According to the packaging device, the metal sealing layer is subjected to thermal bonding under the temperature gradient, so that the influence of high temperature in the bonding process on the performance of an electronic component can be avoided, a bonding joint with compact structure and excellent performance can be obtained, and the firm connection of the packaging tube shell and the cover plate is facilitated.
Description
Technical Field
The invention relates to the technical field of electronic component packaging, in particular to a packaging device and a packaging method based on thermoelectric coupling.
Background
With the development of the field of integrated circuits, electronic components are miniaturized and highly integrated, and in order to ensure the stability and reliability of the operation of the electronic components, the electronic components need to be well packaged, so that the good vacuum property and the good air tightness of the electronic components are ensured.
Because electronic components do not resist high temperature, a low-temperature bonding process becomes a preferred scheme for packaging the electronic components, a transient liquid phase bonding technology is a widely used low-temperature bonding technology, in the process of packaging the electronic components by adopting the transient liquid phase bonding process in the prior art, the whole device needs to be heated to ensure that welding points are welded firmly, even if low-melting-point metal is selected as a bonding material, the welding temperature of the low-melting-point metal needs to reach over 180 ℃, the low-melting-point metal far exceeds the working temperature of the electronic components such as chips and the like, and the performance of the electronic components is easily influenced in the packaging process.
Disclosure of Invention
The invention provides a packaging device and a packaging method based on thermoelectric coupling, which are used for solving the problem that the performance of an electronic component is influenced by high temperature in the packaging process of the conventional packaging device.
In a first aspect, the present invention provides a package device based on thermoelectric coupling, comprising: a packaging assembly and a refrigeration assembly;
the packaging assembly comprises a packaging tube shell and a cover plate, the packaging tube shell is provided with an accommodating cavity, the accommodating cavity is used for placing electronic components, one end of the packaging tube shell is arranged in an open manner, and the cover plate covers the open manner; a metal sealing layer is clamped between the opposite surfaces of the packaging tube shell and the cover plate, and partial area of the metal sealing layer is exposed out of the cover plate;
the refrigeration component is arranged at one end, deviating from the cover plate, of the packaging tube shell, and the refrigeration component can absorb heat of the packaging tube shell, so that a temperature gradient is formed at the packaging tube shell, and the packaging tube shell and the cover plate are bonded through the metal sealing layer under the temperature gradient.
According to the packaging device based on thermoelectric coupling, the packaging tube shell comprises a substrate and a frame body, the frame body is arranged in the circumferential direction of the substrate in a surrounding mode, and the inner wall surface of the substrate and the inner wall surface of the frame body form the accommodating cavity in a surrounding mode;
a first bonding layer is arranged on the inner wall surface of the substrate, and a bonding part is arranged in the circumferential direction of the first bonding layer; the inner wall surface of the frame body is provided with a conduction groove, and the end surface of the frame body, which is far away from the cover plate, is provided with a pad part;
one end of the bonding part is bonded with the first bonding layer, and the other end of the bonding part penetrates through the conduction groove and is bonded with the bonding pad part.
According to the packaging device based on thermoelectric coupling, the bonding part comprises a plurality of bonding units, and the bonding units are arranged at intervals in the circumferential direction of the first bonding layer; the conduction groove comprises a plurality of conduction grooves, the conduction grooves are arranged on the inner wall surface of the frame body at intervals, and the bonding units correspond to the conduction grooves one to one.
According to the packaging device based on thermoelectric coupling, the outer wall surface of the substrate is provided with a second adhesive layer, and the second adhesive layer is used for being adhered to the refrigerating assembly.
According to the packaging device based on thermoelectric coupling, the metal sealing layer comprises a base layer, a first bonding layer, a second bonding layer and a third bonding layer which are sequentially arranged;
the first bonding layer and the third bonding layer are made of the same material, and the melting point of the first bonding layer is higher than that of the second bonding layer.
According to the packaging device based on thermoelectric coupling, the first bonding layer is made of gold, silver or copper, and the second bonding layer is made of tin, indium, gallium or bismuth.
According to the packaging device based on thermoelectric coupling, the packaging tube shell is made of aluminum oxide ceramic or aluminum nitride ceramic.
According to the packaging device based on thermoelectric coupling, the refrigeration assembly comprises a plurality of P-type semiconductors, a plurality of N-type semiconductors, a metal conducting layer and two heat dissipation layers;
the P-type semiconductors and the N-type semiconductors are alternately arranged at intervals and are connected through the metal conducting layer, and the heat dissipation layer is arranged on one side, away from the semiconductors, of the metal conducting layer.
According to the packaging device based on thermoelectric coupling, the heat dissipation layer is made of aluminum oxide ceramic, aluminum nitride ceramic, silicon carbide ceramic or silicon nitride ceramic.
In a second aspect, the present invention provides a method for packaging a package device based on thermoelectric coupling, comprising:
attaching the metal sealing layer to the end face of the opening of the packaging tube shell, placing an electronic component into the packaging tube shell, and covering the cover plate at the opening so that the metal sealing layer is clamped between the cover plate and the metal sealing layer; bonding the refrigerating assembly to one end, away from the cover plate, of the packaging tube shell;
and determining a laser bonding path in a region between the end face of the cover plate and the end face of the metal sealing layer on the metal sealing layer, and controlling the laser to move on the metal sealing layer along the laser bonding path.
According to the packaging device and the packaging method based on thermoelectric coupling, the metal sealing layer is clamped between one end face of the packaging tube shell and the covering face of the cover plate, the refrigerating assembly is attached to the other end face of the packaging tube shell, the electronic component is placed in the packaging tube shell, the local area of the metal sealing layer is heated in the packaging process, the refrigerating assembly can absorb heat to enable the packaging tube shell area to form a temperature gradient along the vertical direction, the metal sealing layer is thermally bonded under the temperature gradient, the influence of high temperature in the bonding process on the performance of the electronic component can be avoided, a bonding joint with compact structure and excellent performance can be obtained, and firm connection of the packaging tube shell and the cover plate is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a cross-sectional view of a packaged device provided by the present invention;
FIG. 2 is a partial schematic view of a packaging device provided by the present invention (the cover plate and the metal seal layer are not shown);
FIG. 3 is a schematic view of the microstructure of a bonded joint formed by a conventional transient liquid phase bonding process;
FIG. 4 is a schematic view of the microstructure of a bonded joint formed by a transient liquid phase bonding process under a temperature gradient provided by the present invention;
FIG. 5 is a temperature-time plot of a finite element simulated package under localized heat source conditions;
FIG. 6 is a temperature-current graph of a finite element simulated package without heat source;
FIG. 7 is a schematic illustration of a laser bonding path of a packaging apparatus provided by the present invention;
reference numerals: 100: a package assembly; 11: a cover plate; 12: a metal sealing layer; 13: packaging the tube shell; 131: a substrate; 132: a frame body; 1321: a conduction groove; 14: a first adhesive layer; 15: a bonding portion; 151: a bonding unit; 16: a land part; 17: a second adhesive layer; 18: a chip placement area; 200: a refrigeration assembly; 21: a first heat dissipation layer; 22: a metal flow deflector; 23: a P-type semiconductor; 24: an N-type semiconductor; 25: and a second heat dissipation layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
The package device and the package method based on thermoelectric coupling according to the embodiments of the present invention are described below with reference to fig. 1 to 7.
As shown in fig. 1, a package device based on thermoelectric coupling according to an embodiment of the present invention includes: the packaging assembly 100 and the refrigeration assembly 200, the packaging assembly 100 comprises a packaging tube shell 13 and a cover plate 11, the packaging tube shell 13 is provided with an accommodating cavity, the accommodating cavity is used for placing electronic components, one end of the packaging tube shell 13 is arranged in an open manner, and the cover plate 11 covers the open; a metal sealing layer 12 is sandwiched between the opposing surfaces of the package case 13 and the cover plate 11, and a partial region of the metal sealing layer 12 is exposed to the cover plate 11; refrigeration subassembly 200 is located the one end that encapsulation tube shell 13 deviates from apron 11, and refrigeration subassembly 200 can absorb the heat of encapsulation tube shell 13 for encapsulation tube shell 13 department forms temperature gradient, so that encapsulation tube shell 13 and apron 11 pass through metal seal 12 bonding under temperature gradient.
Specifically, the packaging assembly 100 and the refrigeration assembly 200 are attached to each other, the packaging assembly 100 includes a packaging tube shell 13 and a cover plate 11, the packaging tube shell 13 is a hollow body with an open end, the packaging tube shell 13 has a containing cavity, and the size of the containing cavity is matched with the size of an electronic component. The central region of the receiving cavity is configured with a chip placement area 18, where chips can be placed.
For example, the package case 13 is a hollow square body, the size of the package case 13 is set according to actual requirements, for example, the length, width and height of the package case 13 are respectively 7mm, 7mm and 0.8mm, and the length, width and height of the accommodating cavity are respectively 6mm, 6mm and 0.5mm. A metal sealing layer 12 with a certain thickness is deposited on the end surface of the open end of the package tube 13, and the end surface of the open end of the package tube 13 is defined as a first end surface, and the end surface opposite to the open end of the package tube 13 is defined as a second end surface. The size of the metal sealing layer 12 is matched with the first end face, the metal sealing layer 12 is also in a hollow square shape, and the thickness of the metal sealing layer 12 is set according to actual requirements, for example, the thickness of the metal sealing layer 12 is 0.05mm. The cover plate 11 has a length smaller than that of the metal sealing layer 12, the cover plate 11 has a width smaller than that of the metal sealing layer 12, that is, a distance is provided between an end surface of the cover plate 11 and an end surface of the metal sealing layer 12 in a circumferential direction of the package assembly 100, and a partial region of the metal sealing layer 12 is exposed to an outer side of the cover plate 11. A thermal bonding path is defined in a region between an end face of the cover plate 11 on the metal seal layer 12 and an end face of the metal seal layer 12, and the thermal bonding path surrounds the metal seal layer 12 by one turn.
Refrigeration subassembly 200 sets up with the laminating of the second terminal surface of encapsulation tube shell 13, and refrigeration subassembly 200 has cold junction and hot junction, and the laminating of the second terminal surface of cold junction and encapsulation tube shell 13 sets up, and the cold junction can absorb the heat of encapsulation tube shell 13, and the heat transfer that the cold junction absorbed is to the hot junction, further loses to the external environment through the hot junction in. The refrigeration assembly 200 is not particularly limited, and the refrigeration assembly 200 may be a refrigeration sheet, a heat conductive gel, a heat conductive pad, or the like.
The following describes a packaging process of the packaging device, a metal sealing layer 12 with a certain thickness is attached to a first end surface of a packaging tube shell 13, the metal sealing layer 12 may be deposited at the first end surface of the packaging tube shell 13 through an electroplating process, a chip is placed in a chip placing area 18 in the packaging tube shell 13, a cover plate 11 covers an opening of the packaging tube shell 13, and a covering surface of the cover plate 11 abuts against a partial area of the metal sealing layer 12. The refrigeration assembly 200 may be adhered to the second end of the package housing 13 by an adhesive. Heating metal seal 12 along the thermal bonding route on metal seal 12, heat can be along the transmission of encapsulation tube shell 13 among the heating process, and refrigeration subassembly 200 can absorb the heat of encapsulation tube shell 13, from this at the regional certain temperature gradient that forms of vertical direction of edge of encapsulation tube shell 13, and metal seal 12 takes place the thermal bonding effect with encapsulation tube shell 13 and apron 11 under certain temperature gradient.
The metal sealing layer 12 is bonded at low temperature by a transient liquid phase bonding process to form a high temperature resistant intermetallic compound joint, the metal sealing layer 12 is composed of high melting point metals and low melting point metals, the high melting point metals comprise Ir, mo, nb, os, re, ta, au, ag, W and the like, and the low melting point metals comprise Al, ga, in, mg, pb, sb, sn, zn and the like. The metal sealing layer 12 is located between the end face of the package tube shell 13 and the covering face of the cover plate 11, the melting temperature of the metal sealing layer 12 is low, small pressure or no pressure is applied, heating is carried out under the vacuum condition, a liquid phase alloy with low melting point is formed due to the fact that the melting point of the middle layer is reached or the middle layer and a base metal are mutually diffused to form an eutectic reaction product, and a thin liquid middle layer is formed. The liquid intermediate layer wets the parent metal to form a uniform liquid film, diffusion can occur between the intermediate layer alloy and the parent metal after a certain heat preservation time, and the low-melting-point element continuously diffuses to the parent metal, so that the melting point of the residual liquid phase is increased, and the compact and stable bonding joint is obtained.
The refrigeration component 200 absorbs heat of the packaging tube shell 13, a certain temperature gradient is formed in the area of the packaging tube shell 13, the metal sealing layer 12 is thermally bonded under the certain temperature gradient, crystals are preferentially arranged in an orientation mode in the grain growth process, and directional solidification of the alloy can be achieved. The molten alloy is directionally solidified along the direction opposite to the heat flow, the grain orientation of a solidified structure can be well controlled by the directional solidification, a continuous single crystal or columnar crystal structure is formed, the longitudinal mechanical property of the bonding joint is improved by eliminating a transverse grain boundary, and the firm connection of the bonding joint is facilitated.
The mode of adopting local heating replaces whole heating, and in the thermal bonding process, the heat transfer of encapsulation tube shell 13 is to refrigeration subassembly 200 department, further scatters and disappears to the external environment in, effectively avoids the influence that high temperature caused electronic components in the thermal bonding process.
In the embodiment of the invention, a metal sealing layer 12 is clamped between one end face of the packaging tube shell 13 and the covering face of the cover plate 11, the refrigeration assembly 200 is attached to the other end face of the packaging tube shell 13, the electronic component is placed in the packaging tube shell 13, a local area of the metal sealing layer 12 is heated in the packaging process, the refrigeration assembly 200 can absorb heat to enable the area of the packaging tube shell 13 to form a temperature gradient, and the metal sealing layer 12 is thermally bonded under the temperature gradient, so that the influence of high temperature in the bonding process on the performance of the electronic component can be avoided, a bonding joint with compact structure and excellent performance can be obtained, and the firm connection of the packaging tube shell 13 and the cover plate 11 is facilitated.
As shown in fig. 1, in an alternative embodiment, the package housing 13 includes a substrate 131 and a frame 132, the frame 132 is disposed around the substrate 131, and an inner wall surface of the substrate 131 and an inner wall surface of the frame 132 form an accommodating cavity; a first adhesive layer 14 is provided on the inner wall surface of the substrate 131, and a bonding portion 15 is provided in the circumferential direction of the first adhesive layer 14; the inner wall surface of the frame 132 is provided with a conduction groove 1321, and the end surface of the frame 132 departing from the cover plate 11 is provided with a pad part 16; one end of the bonding portion 15 is bonded to the first adhesive layer 14, and the other end of the bonding portion 15 is inserted into the conductive groove 1321 and bonded to the pad portion 16.
Specifically, the package housing 13 includes a substrate 131 and a frame 132, the frame 132 surrounds the substrate 131, the frame 132 is adapted to the substrate 131, for example, the substrate 131 is a square, the frame 132 is a hollow square, the substrate 131 has an inner wall surface, an outer wall surface and a circumferential surface, the inner wall surface is opposite to the accommodating cavity. The frame 132 has a first end face and a second end face opposed to the cover plate 11, and an inner wall face and an outer wall face flush with the outer wall face of the base plate 131, the inner wall face being opposed to the accommodation chamber. The substrate 131 and the frame 132 may be integrally formed, or may be separately manufactured and then connected by adhesion, so that the inner wall surface of the substrate 131 and the inner wall surface of the frame 132 enclose a containing cavity.
The inner wall face of base plate 131 is equipped with first adhesive linkage 14, and first adhesive linkage 14 is located the centre position of holding the chamber, and first adhesive linkage 14 can choose the copper sheet preparation for use, and the size of first adhesive linkage 14 sets up according to actual need, and for example length, width and the thickness of first adhesive linkage 14 are 5mm, 5mm and 0.05mm respectively, and first adhesive linkage 14 is used for fixed chip.
As shown in fig. 1 and 2, a bonding portion 15 is arranged in the circumferential direction of the first adhesive layer 14, the bonding portion 15 includes a plurality of bonding units 151, the plurality of bonding units 151 are arranged at intervals in the circumferential direction of the substrate 131, and the bonding units 151 are made of copper sheets. A conduction groove 1321 is provided in a position corresponding to the circumferential surface of the substrate 131 on the inner wall surface of the frame 132, the conduction groove 1321 includes a plurality of conduction grooves that are provided at intervals in the circumferential direction of the inner wall surface of the frame 132, and the plurality of conduction grooves correspond one-to-one to the plurality of bonding units 151. The frame 132 is provided with a pad portion 16 on a second end surface facing away from the cover plate 11, the pad portion 16 includes a plurality of pads, the plurality of pads are arranged at intervals along a circumferential direction of the second end surface, and the plurality of pads are in one-to-one correspondence with the plurality of conduction grooves. The size of the conduction groove is set according to actual requirements, for example, the thickness of the substrate 131 is 0.3mm, the length, width and depth of the conduction groove are 0.3mm, 0.35mm and 0.05mm, respectively, and the size of the conduction groove matches with the size of the bonding unit 151. The size of the bonding pad is set according to actual requirements, for example, the length, the width and the thickness of the bonding pad are respectively 0.3mm, 0.3mm and 0.05mm.
The bonding unit 151, the conduction groove and the bonding pad are in one-to-one correspondence, one end of the bonding unit 151 is connected with the chip through a bonding wire, the bonding unit 151 penetrates through the conduction groove and then is connected with the bonding pad, and the bonding pad is connected with an external element, so that the chip can be electrically connected with the external element. The bonding unit 151 may be made of copper, silver or gold, and the bonding pad may be made of copper, silver or gold.
In the embodiment of the present invention, the inner wall surface of the substrate 131 is provided with the first adhesive layer 14, the first adhesive layer 14 is used for fixing an electronic component, the circumferential direction of the first adhesive layer 14 is provided with a plurality of bonding units 151 at intervals, the inner wall surface of the frame 132 is provided with a plurality of conduction grooves at intervals, the end surface of the frame 132 away from the cover plate 11 is provided with a plurality of pads at intervals, the bonding units 151, the conduction grooves and the pads are in one-to-one correspondence, one end of the bonding unit 151 is connected with the electronic component through a bonding wire, and after the bonding unit 151 is inserted into the conduction grooves, the other end of the bonding unit 151 is connected with the pads, so that the electronic component inside the package case 13 can be electrically connected with an external component, and the working stability of the electronic component is ensured.
In an alternative embodiment, as shown in fig. 1, the outer wall surface of the substrate 131 is provided with a second adhesive layer 17, and the second adhesive layer 17 is used for bonding with the refrigeration assembly 200.
Specifically, the outer wall surface of the substrate 131 is provided with the second adhesive layer 17, the size of the second adhesive layer 17 is set according to actual requirements, for example, the length, the width and the thickness of the second adhesive layer 17 are 5.5mm, 5.5mm and 0.05mm, respectively, and the second adhesive layer 17 is used for fixing the refrigeration assembly 200. The second adhesive layer 17 is adhered to the outer wall surface of the substrate 131 by an adhesive, and the refrigeration unit 200 is adhered to the second adhesive layer 17 by an adhesive.
The second adhesive layer 17 is made of a copper material, copper has excellent heat conductivity, and in the thermal bonding process, the second adhesive layer 17 is beneficial to transferring heat of the packaging tube shell 13 towards the refrigeration assembly 200, so that the formation of a temperature gradient is facilitated, the mechanical property of a bonding joint is ensured, and meanwhile, electronic components are effectively prevented from being damaged by heat in the thermal bonding process.
In an alternative embodiment, the metal sealing layer 12 includes a base layer, a first bonding layer, a second bonding layer, and a third bonding layer, which are sequentially disposed; the first bonding layer and the third bonding layer are made of the same material, and the melting point of the first bonding layer is higher than that of the second bonding layer.
Specifically, the metal sealing layer 12 may be a plurality of transient liquid phase bonding systems, which may be a silver and indium bonding system, a copper and tin bonding system, or a gold and tin bonding system, the metal sealing layer 12 is composed of a high melting point metal layer and a low melting point metal layer, the high melting point metal may be gold, silver, or copper, etc., and the low melting point metal may be a combination of components of tin, indium, gallium, bismuth, and binary or ternary alloys thereof. The material of the first bonding layer can be gold, silver or copper, etc., and the material of the second bonding layer can be tin, indium, gallium or bismuth, etc.
Taking a silver and indium bonding system as an example for explanation, the base layer is made of copper, the first bonding layer is made of silver, the second bonding layer is made of indium, and the third bonding layer is made of silver. A copper layer with a certain thickness is deposited on the first end surface of the frame 132 through an electron beam evaporation process, so that the first bonding layer, the second bonding layer and the third bonding layer are sequentially deposited on the copper layer in an electroplating manner. The width of the copper layer matches the thickness of the frame 132, and the widths of the first bonding layer, the second bonding layer and the third bonding layer all match the distance from the end face of the cover plate 11 to the inner wall face of the frame 132.
At the typical silver-indium bonding interface, indium is completely consumed and the bonding joint is made of Ag and Ag 2 The In intermetallic compound is formed by adopting a traditional transient liquid phase bonding process, the whole packaging assembly 100 needs to be heated, the bonding temperature is often higher than 500 ℃, and the high temperature In the bonding process seriously influences the performance of the electronic component, so that the reliability of the electronic component In the service process is influenced.
In the invention, the first bonding layer, the second bonding layer and the third bonding layer are positioned in the area between the inner wall surface of the frame 132 and the end surface of the cover plate 11, the heating is carried out in the local area of the base layer, the center of the heat source is positioned at the outer side of the cover plate 11, and the heat generated in the local area is transferred to the bonding layer between the cover plate 11 and the packaging tube shell 13, so that the bonding between the cover plate 11 and the packaging tube shell 13 is realized. Local heating is adopted, so that thermal shock to the bonding material is integrally relieved, the level of thermal stress is reduced, and the influence of high temperature in the bonding process on electronic components is avoided. The metal sealing layer 12 adopts a transient liquid phase bonding system, and a bonding joint with excellent performance is formed after thermal bonding, so that the firmness and the tightness of the connection between the packaging tube shell 13 and the cover plate 11 are guaranteed.
In an alternative embodiment, the material of the encapsulation shell 13 is alumina ceramic or aluminum nitride ceramic.
Specifically, the package case 13 includes a substrate 131 and a frame 132, wherein the substrate 131 and the frame 132 are made of alumina ceramic or aluminum nitride ceramic, and the alumina ceramic or aluminum nitride ceramic has excellent thermal conductivity, mechanical properties, high temperature resistance, chemical corrosion resistance, and reliable insulating properties.
The cover plate 11 is made of silicon dioxide ceramics, the metal sealing layer 12 is clamped between the packaging tube shell 13 and the cover plate 11, and the metal sealing layer 12 is thermally bonded under the temperature gradient, so that the packaging tube shell 13 is stably connected with the cover plate 11, and the sealing performance of packaging and the working reliability of electronic components are guaranteed.
As shown in fig. 1, in an alternative embodiment, the refrigeration assembly 200 includes a plurality of P-type semiconductors 23, a plurality of N-type semiconductors 24, a metallic conductive layer, and two heat dissipation layers; the P-type semiconductors 23 and the N-type semiconductors 24 are alternately arranged at intervals and are connected through a metal conductive layer, and the heat dissipation layer is arranged on one side, away from the semiconductors, of the metal conductive layer.
Specifically, the refrigeration assembly 200 includes a plurality of P-type semiconductors 23 and a plurality of N-type semiconductors 24, the plurality of P-type semiconductors 23 and the plurality of N-type semiconductors 24 being alternately disposed, and hereinafter, for convenience of description, both the P-type semiconductors 23 and the N-type semiconductors 24 are referred to as semiconductors. The semiconductor can be made of BiTe, pbTe, pbS, pbSe or skutterudite, and the size of the semiconductor is set according to actual requirements, such as the length, width and height of the semiconductor are 0.5mm, 0.5mm and 0.73mm respectively. The distance between two semiconductors is set according to actual requirements, for example, two adjacent semiconductors are spaced by 0.1mm.
The metal conducting layer covers two opposite end faces of the semiconductors, the metal conducting layer comprises a plurality of metal flow deflectors 22, the metal flow deflectors 22 are connected with two adjacent semiconductors, the metal flow deflectors 22 can completely cover the end faces of the two adjacent semiconductors, and the plurality of P-type semiconductors 23 and the plurality of N-type semiconductors 24 form a series circuit through the plurality of metal flow deflectors 22.
The quantity on heat dissipation layer is two, and the size on heat dissipation layer sets up according to the actual demand, defines two heat dissipation layers and is first heat dissipation layer 21 and second heat dissipation layer 25 respectively, and first heat dissipation layer 21 is relative with base plate 131, and the outer wall of base plate 131 is equipped with second adhesive linkage 17, and the material of second adhesive linkage 17 is copper, and first heat dissipation layer 21 bonds through adhesive and second adhesive linkage 17, realizes being connected of refrigeration subassembly 200 and encapsulation subassembly 100 from this, and it is convenient to assemble.
The dimensions of the first heat dissipation layer 21 and the second heat dissipation layer 25 are set according to actual requirements, for example, the length, the width and the thickness of the first heat dissipation layer 21 are respectively 6mm, 6mm and 0.25mm, and the dimensions of the second heat dissipation layer 25 and the first heat dissipation layer 21 are the same.
Traditional transient liquid phase bonding processes involve diffusion of solid species, the process time is long, usually several hours, and non-uniform diffusion of the two metallization layers can result in the formation of kirkendall cavities. Research shows that bonding can be accelerated under the temperature gradient, and the temperature gradient is formed by utilizing local area heating and heat dissipation of the refrigerating assembly 200.
The local area of the metal sealing layer 12 is heated, in the thermal bonding process, the cold end of the refrigeration assembly 200 absorbs the heat of the packaging tube shell 13, the heat is transferred to the hot end of the refrigeration assembly 200, the temperature of the packaging tube shell 13 is reduced, and meanwhile, the packaging tube shell 13 forms a large temperature gradient along the vertical direction, so that the thermal bonding speed is accelerated. By controlling the current and other factors, a stable and large temperature gradient can be formed, the bonding process is accelerated, the bonding time is shortened, and the protection of electronic components in the packaging tube shell 13 is facilitated.
Taking the example of using the Ag-In-Ag metallization layer as the metal sealing layer 12, the heat source is locally heated by laser. As shown In fig. 5, according to the finite element simulation result, the lowest temperature of the package case 13 is above 183 ℃ In the whole bonding process, which satisfies the bonding temperature requirement of the Ag-In bonding system under the transient liquid phase bonding process. The highest temperature of the chip area is 42 ℃, the temperature in the bonding process is basically lower than 40 ℃, and the temperature requirement of a thermosensitive chip or a low-temperature working chip is met.
As shown in fig. 3, in the conventional transient liquid phase bonding process, in the case where no refrigeration component is provided, ag is present on the side close to the cover plate 11 2 In growth rate and Ag near the side of the package envelope 13 2 The In growth speed is similar, and the bonding speed is slow. As shown in fig. 4, in the present invention, the current is applied to the cooling module 200 to form a stable and large temperature gradient at the package casing 13, and the Ag on the side close to the package casing 13 2 The growth rate of In is far greater than that of Ag at one side close to the cover plate 11 2 And (3) In growth speed. Bonding is carried out under a larger temperature gradient, crystals are preferentially arranged along a preferred orientation in the process of grain growth, the directional solidification of the alloy is realized, and the larger temperature gradient can promote the directional solidification. The directional solidification can well control the grain orientation of a solidification structure to form a continuous single crystal or columnar crystal structure, and the longitudinal mechanical property of the bonding joint is improved by eliminating a transverse grain boundary. The directional solidification is carried out under a larger temperature gradient, a fine and uniform dendritic crystal structure with greatly reduced element segregation can be obtained, the content of solid-solution pores and the residual segregation of elements after the solid-solution heat treatment are obviously reduced, and then the bonded joint with compact structure and excellent performance is favorably obtained, and the firm connection of the packaging tube shell 13 and the cover plate 11 is realized.
Further, during the service life of the chip, the refrigeration assembly 200 may continue to be used as a refrigeration unit. When the chip works at a low temperature and the requirement on the temperature is higher, the current is introduced into the refrigeration assembly 200 at the moment, and the refrigeration assembly 200 can play a role in dissipating heat and reducing the temperature of the chip. As shown in fig. 6, through finite element simulation analysis, in the service process of the chip, two amperes of current is supplied to the refrigeration component 200, the highest temperature of the package case 13 is minus 9.5 ℃, and meanwhile, the highest temperature of the chip region is minus 27.2 ℃, so that the temperature of the chip region is effectively reduced, and the reliability of the chip in working at a low temperature is effectively guaranteed.
In the embodiment of the present invention, the refrigeration assembly 200 includes a plurality of P-type semiconductors 23 and a plurality of N-type semiconductors 24 alternately arranged at intervals, the plurality of P-type semiconductors 23 and the plurality of N-type semiconductors 24 form a series circuit through a metal conductive layer, and a current is applied to the refrigeration assembly 200, so that heat absorption and heat dissipation can be achieved, and in the thermal bonding process, the encapsulation tube shell 13 can form a stable temperature gradient, so as to improve the bonding speed of thermal bonding, obtain a bonding joint with excellent performance, and ensure the stability of connection between the encapsulation tube shell 13 and the cover plate 11; meanwhile, in the service process of the electronic components, the refrigeration assembly 200 can be used as a refrigeration unit, so that the effective heat dissipation effect on the electronic components is achieved, and the working reliability of the electronic components is guaranteed.
In an alternative embodiment, the material of the heat dissipation layer is alumina ceramic, aluminum nitride ceramic, silicon carbide ceramic or silicon nitride ceramic. The heat dissipation layer is made of aluminum oxide ceramic, aluminum nitride ceramic, silicon carbide ceramic or silicon nitride ceramic, has excellent heat conductivity and insulativity, and guarantees safety when heat conduction requirements are met.
The invention also provides a packaging method of the packaging device based on thermoelectric coupling, which comprises the following steps: attaching a metal sealing layer 12 on the end surface of the opening of the packaging tube shell 13, placing the electronic component into the packaging tube shell 13, and covering the cover plate 11 at the opening so that the metal sealing layer 12 is clamped between the cover plate 11 and the metal sealing layer 12; bonding the refrigeration assembly 200 to one end of the packaging tube shell 13, which is far away from the cover plate 11;
a laser bonding path is determined in a region between the end face of the cover plate 11 on the metal sealing layer 12 and the end face of the metal sealing layer 12, and the laser is controlled to move on the metal sealing layer 12 along the laser bonding path.
Specifically, the metal sealing layer 12 is electroplated and deposited on the end face where the opening of the package tube shell 13 is located, the metal sealing layer 12 includes a copper layer, a first bonding layer, a second bonding layer and a third bonding layer which are sequentially electroplated and deposited, the first bonding layer and the third bonding layer are made of the same material, the melting point of the first bonding layer is greater than that of the second bonding layer, the first bonding layer can be made of silver, and the second bonding layer can be made of indium.
The electronic component is placed in the packaging tube shell 13, the cover plate 11 is covered and arranged at the opening, and the metal sealing layer 12 is clamped between the end face of the packaging tube shell 13 and the covering face of the cover plate 11. The refrigeration assembly 200 is glued to the end face of the package housing 13 facing away from the cover plate 11. A laser bonding path is marked between the end face of the cover plate 11 and the end face of the metal seal layer 12.
As shown in fig. 7, the arrows point to the course of the laser bonding path, and heat is applied along the laser bonding path on the metal sealing layer 12, so that the heat of the local area on the metal sealing layer 12 can be transferred to the first bonding layer, the second bonding layer and the third bonding layer. The refrigeration assembly 200 absorbs the heat of the packaging tube shell 13, avoids high temperature from influencing the performance of electronic components, simultaneously enables the packaging tube shell 13 to form a temperature gradient in an area, and the first bonding layer, the second bonding layer and the third bonding layer are subjected to transient liquid phase bonding under the temperature gradient, so that the bonding speed of thermal bonding is accelerated, the mechanical property of a bonding joint is optimized, and the firmness of connection of the bonding joint is guaranteed.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A thermoelectric coupling based packaging device, comprising: a packaging assembly and a refrigeration assembly;
the packaging assembly comprises a packaging tube shell and a cover plate, the packaging tube shell is provided with an accommodating cavity, the accommodating cavity is used for placing an electronic component, one end of the packaging tube shell is arranged in an open manner, and the cover plate covers the open; a metal sealing layer is clamped between the opposite surfaces of the packaging tube shell and the cover plate, and partial area of the metal sealing layer is exposed out of the cover plate;
the refrigeration component is arranged at one end, deviating from the cover plate, of the packaging tube shell, and the refrigeration component can absorb heat of the packaging tube shell, so that a temperature gradient is formed at the packaging tube shell, and the packaging tube shell and the cover plate are bonded through the metal sealing layer under the temperature gradient.
2. The package based on thermoelectric coupling as claimed in claim 1, wherein the package casing comprises a substrate and a frame, the frame is disposed around the substrate, and an inner wall surface of the substrate and an inner wall surface of the frame form the accommodating cavity;
a first bonding layer is arranged on the inner wall surface of the substrate, and a bonding part is arranged in the circumferential direction of the first bonding layer; the inner wall surface of the frame body is provided with a conduction groove, and the end surface of the frame body, which is far away from the cover plate, is provided with a pad part;
one end of the bonding part is bonded with the first bonding layer, and the other end of the bonding part penetrates through the conduction groove and is bonded with the welding disc part.
3. The thermoelectric coupling based packaging device of claim 2, wherein the bonding portion comprises a plurality of bonding units, and the bonding units are arranged at intervals in the circumferential direction of the first adhesive layer; the conduction groove comprises a plurality of conduction grooves, the conduction grooves are arranged on the inner wall surface of the frame body at intervals, and the bonding units correspond to the conduction grooves one to one.
4. The thermoelectric coupling based packaging device of claim 2, wherein the outer wall surface of the substrate is provided with a second adhesive layer, and the second adhesive layer is used for bonding with the refrigeration component.
5. The thermoelectric coupling based packaging device of claim 1, wherein the metal sealing layer comprises a base layer, a first bonding layer, a second bonding layer and a third bonding layer arranged in sequence;
the first bonding layer and the third bonding layer are made of the same material, and the melting point of the first bonding layer is higher than that of the second bonding layer.
6. The device of claim 5, wherein the first bonding layer is made of Au, ag, or Cu, and the second bonding layer is made of Sn, in, ga, or Bi.
7. The thermoelectric coupling based package of claim 1, wherein the material of the package casing is alumina ceramic or aluminum nitride ceramic.
8. The thermoelectric coupling based packaging device of claim 1, wherein the cooling component comprises a plurality of P-type semiconductors, a plurality of N-type semiconductors, a metallic conductive layer, and two heat dissipation layers;
the P-type semiconductors and the N-type semiconductors are alternately arranged at intervals and are connected through the metal conducting layer, and the heat dissipation layer is arranged on one side, away from the semiconductors, of the metal conducting layer.
9. The device of claim 8, wherein the material of the heat dissipation layer is alumina ceramic, aluminum nitride ceramic, silicon carbide ceramic, or silicon nitride ceramic.
10. A method for packaging a thermoelectric coupling based packaged device according to any of claims 1 to 9, comprising:
attaching the metal sealing layer to the end face of the opening of the packaging tube shell, placing an electronic component into the packaging tube shell, and covering the cover plate at the opening so that the metal sealing layer is clamped between the cover plate and the metal sealing layer; adhering the refrigerating assembly to one end of the packaging tube shell, which is far away from the cover plate;
and determining a laser bonding path in a region between the end face of the cover plate and the end face of the metal sealing layer on the metal sealing layer, and controlling the laser to move on the metal sealing layer along the laser bonding path.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211216140.3A CN115662955A (en) | 2022-09-30 | 2022-09-30 | Packaging device and packaging method based on thermoelectric coupling |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211216140.3A CN115662955A (en) | 2022-09-30 | 2022-09-30 | Packaging device and packaging method based on thermoelectric coupling |
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| CN115662955A true CN115662955A (en) | 2023-01-31 |
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| CN202211216140.3A Pending CN115662955A (en) | 2022-09-30 | 2022-09-30 | Packaging device and packaging method based on thermoelectric coupling |
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| CN (1) | CN115662955A (en) |
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- 2022-09-30 CN CN202211216140.3A patent/CN115662955A/en active Pending
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