CN115652281A - Air extractor for stabilizing airflow field and LPCVD tubular reactor - Google Patents

Abstract

The invention relates to the technical field of coating, in particular to an air extractor LPCVD (low pressure chemical vapor deposition) tubular reactor of a stable airflow field, wherein the air extractor is applied to the LPCVD tubular reactor, a process area is arranged in the LPCVD tubular reactor, and the air extractor comprises a main air extracting part and at least one secondary air extracting part; the main air exhaust part is positioned at one end of the process area, and the at least one secondary air exhaust part is positioned at the other end of the process area. The main air exhaust part and the secondary air exhaust part are respectively arranged at the two ends of the process area, and both have air exhaust capacity, so that gas at one end far away from the main air exhaust part in the LPCVD tubular reactor can be exhausted in time, turbulent flow is not generated, gas accumulation is avoided, the phenomenon that dust particles generated by polymerization fall onto a silicon wafer to form a film due to advanced reaction of process special gas is avoided, the surface roughness of the film is ensured, the compactness of the film is good, and the quality of the film on the silicon wafer is ensured.

Description

Air extractor for stabilizing airflow field and LPCVD tubular reactor

Technical Field

The invention belongs to the technical field of coating, and particularly relates to an air extractor for stabilizing an airflow field and an LPCVD tubular reactor.

Background

In the production process of passivation contact solar cell pieces such as TOPCon, a polysilicon film needs to be deposited on the surface of a silicon wafer, and in the prior art, a Low Pressure Chemical Vapor Deposition (LPCVD) device is generally used for film Deposition.

The mass production equipment (LPCVD furnace) for solar cell mainly uses the structure that the boat inlet end is the furnace mouth, and the other side is the furnace tail. In the existing furnace body, process special gas (such as silane) required for coating is sprayed into a furnace tube through an air inlet pipe arranged at a furnace opening or a group of air supplement pipes inserted at a furnace tail, and one end of the furnace tube is evacuated. When the device is used, the silicon wafers are arranged on the boat and are placed in a constant-temperature process area in the furnace, process special gas is input and vacuumized, and low-pressure deposition coating is carried out on the silicon wafers at a specific temperature.

In order to improve the yield and efficiency, the loading capacity of the silicon wafers of the single-tube LPCVD furnace tube is improved from hundreds of wafers to one or two thousand wafers, the length of the furnace tube and the length of the constant temperature process zone need to be lengthened. However, when the lengthened LPCVD furnace tube is used for coating production, the produced silicon wafer has poor film compactness of part of the silicon wafer and large surface roughness of the film, and cannot meet the quality requirement.

Therefore, a new technology is needed to solve the problems in the prior art that the compactness of the film on the silicon wafer is poor, the surface roughness of the film is large and the quality requirement cannot be met after the length of the furnace tube and the length of the constant temperature process area are increased.

Disclosure of Invention

The embodiment of the invention provides an air extractor for stabilizing an airflow field and an LPCVD tubular reactor, and aims to solve the problems that the compactness of a film on a silicon wafer is poor, the surface roughness of the film is large and the quality requirement cannot be met after the length of a furnace tube and the length of a constant-temperature process area are increased.

The embodiment of the invention is realized as follows:

an air extractor for stabilizing an airflow field is applied to an LPCVD tubular reactor, a process area is arranged in the LPCVD tubular reactor, and the air extractor comprises a main air extracting part and at least one secondary air extracting part;

the main pumping part is positioned at one end of the process area, and the at least one secondary pumping part is positioned at the other end of the process area.

Still further, the secondary pumping section comprises a secondary pumping tube inserted into the LPCVD tube reactor; the exhaust tube is connected with a negative pressure source.

Furthermore, the negative pressure source is a pump body or a negative pressure pipeline of the main air exhaust part.

Furthermore, a control valve with adjustable opening degree is arranged between the secondary exhaust pipe and the pump body or the negative pressure pipeline.

Furthermore, the pumping speed of the pump body is adjustable.

Furthermore, the secondary exhaust tube is inserted into the LPCVD tube reactor from the tail part of the LPCVD tube reactor.

Furthermore, the LPCVD tubular reactor is provided with a connecting structure for connecting and sealing the furnace cover and the furnace body;

the connecting structure is provided with an internal pore passage, and the internal pore passage is provided with an air port communicated with the interior of the LPCVD tubular reactor;

the secondary air exhaust part comprises a secondary air exhaust pipe positioned outside the LPCVD tubular reactor, one end of the secondary air exhaust pipe is communicated with the inner pore canal, and the other end of the secondary air exhaust pipe is connected with a negative pressure source.

Still further, the main exhaust portion comprises a main exhaust pipe extending through a rear portion of the LPCVD tubular reactor to a head end.

Further, the secondary air extraction portion is at least one hole disposed on the main air extraction pipe.

Furthermore, the distance between the main exhaust tube and the end cover of the head end of the LPCVD tubular reactor is 5cm-60cm.

Furthermore, the air exhaust amount of the secondary air exhaust part is 5% -40% of the total air exhaust amount of the LPCVD tubular reactor.

An LPCVD tubular reactor, comprising the air extractor for stabilizing the gas flow field.

The invention has the following beneficial effects:

in the air extractor for stabilizing the airflow field, the main air extracting part and the secondary air extracting part are respectively arranged at two ends of the process area, and the secondary air extracting part and the main air extracting part can extract air at two ends of the process area, so that the air at two ends of the process area can be extracted, the air accumulation caused by turbulent flow can be avoided, the internal air can be stably extracted, the rough surface of a film formed by falling dust particles on the silicon wafer due to advanced reaction of special process air can be avoided, the compactness of the film is ensured, and the quality of the film on the silicon wafer is ensured.

Drawings

FIG. 1 is a schematic structural diagram provided in the second and third embodiments of the present invention;

FIG. 2 is a schematic structural diagram provided in a fourth embodiment of the present invention;

FIG. 3 is a schematic structural diagram according to the fifth embodiment of the present invention

Reference numerals:

1. a furnace head; 2. a furnace body; 21. a process zone; 22. an air inlet pipe; 3. a furnace tail; 4. an air extraction device; 41. a main air exhaust part; 411. a main exhaust pipe; 412. a negative pressure pipeline; 42. a secondary air exhaust part; 421. a secondary exhaust pipe; 43. a control valve; 5. a connecting structure; 51. an interior bore; 511. a gas port; 512. a communicating pore channel; 100. LPCVD tubular reactor.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. Examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. Furthermore, it should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.

In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; may be mechanically, electrically or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.

In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.

In the air extractor 4 for stabilizing the airflow field, the air extracting parts are arranged at the two ends of the process area 21, and the two ends can extract air, so that the condition that the process special gas is remained and cannot be extracted is avoided, dust particles generated by the advanced reaction of the process special gas are prevented from falling on a silicon wafer, the surface roughness of a film on the silicon wafer is avoided, and the compactness of the film and the quality of the film are ensured to meet the requirements.

Example one

Referring to fig. 1 to 3, the present embodiment is an air extractor 4 for stabilizing a gas flow field, which is applied to an LPCVD tubular reactor 100.

Referring to fig. 1, a process zone 21 is provided in the lpcvd tubular reactor 100, and the process zone 21 is an area where deposition occurs during use. The LPCVD tubular reactor 100 may be an LPCVD furnace having a furnace shaft 2, a furnace head 1 and a furnace end 3, the furnace head 1 having a furnace opening, and the furnace head 1 having a furnace cover for opening or closing the furnace opening to allow a silicon wafer to be put in or taken out. In LPCVD furnaces, gas inlets 22 are usually inserted from the furnace end 3, which gas inlets 22 extend into the process zone 21. The two ends of the process zone 21 are at a small distance from the furnace mouth and the furnace tail 3, and the outside of the process zone 21 is a non-process zone.

The silicon wafer to be deposited with the film is loaded in the slide boat, put into the furnace from the furnace opening and placed in the process zone 21, and the furnace lid is closed. The gas inlet pipe 22 is inserted into the process zone 21, and a plurality of gas inlet holes are uniformly formed on the pipe body, and process special gas (such as silane) is input into one end of the gas inlet pipe 22 outside the furnace, and the gas is input into the furnace from the gas inlet holes. The process gases react at the set temperature and deposit on the silicon wafer in the process zone 21 to form a film.

With reference to fig. 1 to 3, the air extractor 4 comprises a main air extraction portion 41 and at least one secondary air extraction portion 42. The main pumping part 41 is located at one end of the process zone 21, and the at least one sub-pumping part 42 is located at the other end of the process zone 21. That is, the main pumping part 41 and the sub-pumping part 42 are respectively located at both ends of the process field 21 and perform pumping together. It should be understood that the gas in the furnace can be sucked from one end of the process zone 21, either in the process zone 21 or outside the process zone 21, as long as the gas is close to the end of the process zone 21, so as to avoid dust particles caused by gas accumulation. Of course, it is preferable to dispose the main pumping part 41 and the sub-pumping part 42 outside the end of the process zone 21 to avoid affecting the air flow in the process zone 21 during pumping, which results in turbulence and breaks the uniformity of the process gas (e.g. silane) in the process zone 21, and affects the quality of the formed film.

In this embodiment, referring to FIG. 1, both the main pumping section 41 and the sub pumping section 42 are located outside the end of the process zone 21. In other embodiments, both the main pumping section 41 and the sub pumping section 42 are in the process zone 21. In other embodiments, one of the primary pumping section 41 and the secondary pumping section 42 is in the process zone 21 and the other is outside the process zone 21.

Preferably, the pumping capacity of the secondary pumping part 42 is 5% to 40%, for example, 10%, 15%, 20%, 30% or 35% of the total pumping capacity of the LPCVD tubular reactor 100. The total air extraction amount is the sum of the air extraction amounts of the secondary air extraction portion 42 and the main air extraction portion 41, and correspondingly, the air extraction amount of the main air extraction portion 41 is 60% -95% of the total air extraction amount. It can be understood that the air extraction amount of the sub air extraction portion 42 is smaller than that of the main air extraction portion 41, and the main air extraction portion 41 is the one with a large air extraction amount. In such a ratio of the extraction amount, the sub-extraction portion 42 and the main extraction portion 41 can extract the gas in the furnace, and local gas accumulation is avoided.

The length of the conventional LPCVD tubular reaction furnace is 1m, and after the length of the LPCVD tubular reaction furnace is increased, the length of the LPCVD tubular reaction furnace reaches 3m or more than 3m, for example, 4m, 5m, or 6m, and the like, and in the embodiment, the length of the LPCVD tubular reaction furnace is 3.4m.

Based on the above structure, the two ends of the process area 21 are respectively provided with the main pumping part 41 and the secondary pumping part 42, which have sufficient pumping capacity, so that the gas at the end far away from the main pumping part 41 in the LPCVD tubular reactor 100 can be pumped away, and no turbulence is generated to accumulate the gas, thereby preventing the gas from generating dust particles in advance reaction and falling to the ground to form a rough surface of a film on a silicon wafer, ensuring good compactness of the film, and ensuring the quality of the film on the silicon wafer.

Example two

Referring to fig. 1, the present embodiment provides an air extracting device 4 for stabilizing an airflow field, and on the basis of the first embodiment, the present embodiment further has the following design:

the secondary pumping part 42 comprises a secondary pumping pipe 421 inserted into the LPCVD tubular reactor 100; the exhaust tube is connected with a negative pressure source.

As shown in fig. 1, that is, a negative pressure source is connected to the secondary exhaust tube 421, the secondary exhaust tube 421 is inserted into the LPCVD tubular reactor 100, and the exhaust opening thereof is located at one end of the process area 21, and after the negative pressure source is started, gas at one end of the process area 21 can be exhausted, so as to avoid the problem that gas in the area far from the main exhaust part 41 in the LPCVD tubular reactor 100 accumulates to generate dust particles, which results in coarse deposited film and poor compactness.

In this embodiment, the negative pressure source is a pump body, such as a suction pump, and the suction pump is used to pump air, so that the air pressure at the inner end of the secondary suction pipe 421 is greater than the air pressure at the outer end, thereby generating a negative pressure to pump the gas in the LPCVD tubular reactor 100. The pumping speed of the pump body is adjustable, and the pumping speed of the pump body can be adjusted to control the pumping speed so as to adapt to different production situations.

In another embodiment, the negative pressure source is the negative pressure line 412 of the main pumping section 41. The main air exhaust part 41 is also used for air exhaust, the main air exhaust part 41 is connected with the negative pressure pipeline 412, the negative pressure pipeline 412 exhausts air outwards, and in order to save equipment cost, an air pump is not added, and the outer end of the secondary air exhaust pipe is connected to the negative pressure pipeline 412 for air exhaust.

It is understood that a valve can be disposed at the connection between the secondary suction pipe 421 and the pump body or the negative pressure pipeline 412 to control the connection and disconnection of the secondary suction pipe 421 so as to control the proceeding and interruption of suction to meet the production requirements. Preferably, the valve is a control valve 43 with adjustable opening, and the rate of air suction can be controlled by adjusting the opening of the control valve 43 to adapt to different production situations.

EXAMPLE III

Referring to fig. 1, the present embodiment provides an air extracting device 4 for stabilizing an airflow field, and on the basis of the first or second embodiment, the present embodiment further has the following design:

the secondary exhaust tube 421 is inserted into the LPCVD tubular reactor 100 from the end of the LPCVD tubular reactor 100.

The LPCVD tubular reactor 100 is substantially in the form of a horizontal cylinder with a furnace shaft 2 in the middle and a furnace head 1 and a furnace tail 3 at the two ends. Wherein, the furnace shaft 2 is usually made of an integral tubular structure in order to ensure that the strength can meet the requirement of the pressure difference between the inside and the outside of the furnace, and in order to ensure the strength, the furnace shaft 2 is not provided with a pipeline which passes through the furnace wall, thereby avoiding causing local weak points.

The furnace cover is arranged at the furnace head 1, the furnace cover needs to be opened, the activity is needed, and if the secondary exhaust tube 421 is arranged on the furnace cover, the normal opening and closing of the furnace cover can be influenced.

The furnace tail 3 is sealed by an end cover and is firmly welded in a sealing way. The furnace tail 3 does not need to be opened or closed, and a through pipe can be arranged on the furnace tail.

As shown in fig. 1, in this embodiment, the inlet pipe 22 for inputting the process specific gas is inserted into the process zone 21 from the end cover of the end of the LPCVD tubular reactor 100. The main pumping part 41 is a main pumping pipe 411, an opening is arranged in the middle of an end cover at the tail part of the LPCVD tubular reactor 100, one end of the main pumping pipe 411 is connected with the opening, and the other end is connected with a negative pressure pipeline 412.

Therefore, as shown in fig. 1, in the present embodiment, a secondary exhaust tube 421 may be inserted into the LPCVD tubular reactor 100 through the rear portion of the LPCVD tubular reactor 100. It can be understood that since the main pumping part 41 is disposed on the end cap of the end of the LPCVD tubular reactor 100 at the right end of the process area 21, the pumping port of the secondary pumping pipe 421 needs to be disposed at the left end of the process area 21, so that the secondary pumping pipe 421 is inserted into the LPCVD tubular reactor 100 through the end of the LPCVD tubular reactor 100 and extends to the end, i.e. the left end, of the process area 21 far away from the main pumping part 41.

The main exhaust tube 411 is located at the center of the furnace tail 3, and the sub-exhaust tube 421 needs to be inserted into the furnace, so as to avoid the influence of the sub-exhaust tube 21 on the slide boat in the process area, it needs to be inserted around the main exhaust tube 411, but not inserted at the center, and is staggered with the main exhaust tube 411, for example, the sub-exhaust tube 421 is below, above, on the front side or on the back side of the main exhaust tube 411.

Example four

Referring to fig. 2, the present embodiment provides an air extracting device 4 for stabilizing an airflow field, and on the basis of the first embodiment and the second embodiment, the present embodiment further has the following design:

the LPCVD tubular reactor 100 is provided with a connecting structure 5 for connecting and sealing a furnace cover and a furnace body 2; the connecting structure 5 is provided with an inner pore passage 51, the inner pore passage 51 is provided with an air port 511 communicated with the interior of the LPCVD tubular reactor 100, the secondary air extraction part 42 comprises a secondary air extraction pipe 421 located outside the LPCVD tubular reactor 100, one end of the secondary air extraction pipe 421 is communicated with the inner pore passage 51, and the other end is connected with a negative pressure source.

Since the furnace lid of LPCVD tubular reactor 100 is located at the head end of shaft 2, it is necessary to open or close the furnace mouth. The furnace cover is to be sealed during production, i.e. it is to be ensured that the furnace cover is sealed to the furnace shaft 2, and therefore a connection 5 is provided. In particular, as shown in fig. 2, the connection structure 5 is a connection flange.

And because the furnace cover needs to be opened or closed movably, a pipeline cannot be arranged, otherwise, the movement of the furnace cover is limited. Therefore, in the present embodiment, the sub draft tube 421 is provided on the connection structure 5. That is, the position of the sub draft tube 421 of the present embodiment is different from the position of the sub draft tube 421 of the third embodiment.

As shown in fig. 2, an inner duct 51 is provided inside the connecting structure 5, and one end of the inner duct 51 forms a port on the outer side of the connecting structure 5, and is specifically located on the circumferential surface of the connecting structure 5 and is communicated with the secondary suction pipe 421 through the port. The other end of the interior port 51 opens at an end face within the furnace, just at one end of the process zone 21, opposite the end cap at the end of the furnace tail 3. Thereby avoiding the secondary exhaust tube 421 from being arranged on the furnace cover or the furnace body 2 in a penetrating way, and not reducing the strength of the furnace body 2 and influencing the movement of the furnace cover.

In the present embodiment, as shown in fig. 2, the inner duct 51 forms an annular duct in the connection structure 5, and is provided with a plurality of air ports 511, the air ports 511 communicate the annular duct with the furnace, and the inner duct 51 further has a communication duct 512, and the communication duct 512 communicates the annular duct with the sub-extraction pipe 421. The plurality of air ports 511 are arranged in a circular shape at equal intervals, so that air flow is more uniform during air extraction, the influence on the air flow in the furnace is smaller, and the distribution of process special gas in the process area 21 cannot be influenced by turbulence.

EXAMPLE five

Referring to fig. 3, the present embodiment provides an air extracting device 4 for stabilizing an airflow field, and on the basis of the first embodiment, the present embodiment further has the following design:

the main pumping section 41 comprises a main pumping pipe 411, and the main pumping pipe 411 extends through the tail of the LPCVD tubular reactor 100 to the head.

The position of the main extraction pipe 411 of this embodiment is different from the position of the main extraction pipe 411 of the third and fourth embodiments. As shown in fig. 1 and fig. 2, the main exhaust tube 411 of the third embodiment and the fourth embodiment is disposed on the end cap of the end of the LPCVD tubular reactor 100, and the exhaust port of the main exhaust tube 411 is located at the right end of the process area 21.

In the embodiment, as shown in fig. 3, the main exhaust tube 411 passes through the end cover of the tail portion and extends to the left end of the process area 21, which is close to the furnace head 1, and the main exhaust tube 411 is located at the lower position. The nozzle of the main suction pipe 411 is a suction opening.

In this embodiment, as shown in FIG. 3, the sub-pumping section 42 is at least one opening disposed on the main pumping tube 411, and the opening and the nozzle of the main pumping tube 411 are respectively located at two ends of the process zone 21. I.e. the nozzle is located at the left end of the process zone 21 and the at least one opening is located at the right end of the process zone 21. Under this structure, only one exhaust tube is arranged, both ends of the process area 21 can be exhausted, and accumulation of local gas is avoided. Wherein, the distance between the main exhaust tube 411 and the end cover (i.e. the furnace cover) at the head end of the LPCVD tubular reactor 100 is 5cm-60cm, for example 10cm, 20cm, 30cm, 40cm or 50cm.

In another embodiment, the secondary pumping duct 421 is disposed on the end cap of the tail portion, the secondary pumping duct 421 no longer extends into the furnace, and the pumping port of the secondary pumping duct 421 is at the right end of the process zone 21. That is, in this embodiment, the positions of the main suction pipe 411 and the sub suction pipe 421 are changed in addition to the third embodiment.

EXAMPLE six

Referring to fig. 1 to 3, the present embodiment provides an LPCVD tubular reactor 100 including the gas exhaust device 4 for stabilizing a gas flow field as described in any one of the first to fifth embodiments.

The LPCVD tubular reactor 100 of the embodiment adopts the air extractor 4 for stabilizing the airflow field, and can solve the problems that the compactness of the film on the silicon wafer is poor, the surface roughness of the film is large and the quality requirement cannot be met after the length of the LPCVD tubular reactor 100 is increased.

The secondary air exhaust part 42 is added, air exhaust is carried out at two ends of the process area 21, and accumulation of gas in the LPCVD tubular reactor 100 is avoided, so that rough surface of a film caused by dust particles falling to the ground due to advanced reaction of the gas is avoided, good compactness of the film is ensured, and the quality of the film on the silicon wafer is ensured.

In the description herein, references to the description of the terms "some embodiments," "exemplary embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Furthermore, the above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, and any modifications, equivalents and improvements made within the spirit and scope of the present invention should be included.

Claims (12)

1. An air extractor for stabilizing an airflow field is applied to an LPCVD tubular reactor, and a process area is arranged in the LPCVD tubular reactor;

the main pumping part is positioned at one end of the process area, and the at least one secondary pumping part is positioned at the other end of the process area.

2. The gas flow field stabilizing gas exhaust apparatus according to claim 1, wherein the secondary exhaust portion comprises a secondary exhaust tube inserted into the LPCVD tubular reactor; the exhaust tube is connected with a negative pressure source.

3. The extraction device for stabilizing an airflow field according to claim 2, wherein the negative pressure source is a pump body or a negative pressure pipeline of the main extraction portion.

4. The air extracting apparatus for stabilizing an airflow field according to claim 3, wherein an opening-adjustable control valve is provided between the secondary air extracting pipe and the pump body or the negative pressure pipeline.

5. The extraction device for stabilizing an airflow field according to claim 3, wherein the pump body has an adjustable pumping speed.

6. The air extractor of the stabilized airflow field according to claim 2, wherein the secondary air extraction pipe is inserted into the LPCVD tubular reactor from the tail portion of the LPCVD tubular reactor.

7. The extraction device for stabilizing an airflow field according to claim 1, wherein the LPCVD tubular reactor is provided with a connecting structure for connecting and sealing a furnace cover and a furnace body;

the connecting structure is provided with an internal pore passage, and the internal pore passage is provided with an air port communicated with the interior of the LPCVD tubular reactor;

the secondary air exhaust part comprises a secondary air exhaust pipe positioned outside the LPCVD tubular reactor, one end of the secondary air exhaust pipe is communicated with the inner pore canal, and the other end of the secondary air exhaust pipe is connected with a negative pressure source.

8. The extraction device for stabilizing a gas flow field according to claim 1, wherein the main extraction portion comprises a main extraction pipe extending through a tail portion to a head end of the LPCVD tubular reactor.

9. The extraction device for stabilizing an airflow field according to claim 8, wherein the secondary extraction portion is at least one hole provided on the main extraction duct.

10. The extraction device for stabilizing an airflow field according to claim 9, wherein the distance between the main extraction pipe and the head end cover of the LPCVD tubular reactor is 5cm-60cm.

11. The extraction apparatus for stabilizing an airflow field according to any one of claims 1 to 10, wherein the extraction amount of the secondary extraction portion is 5% to 40% of the total extraction amount of the LPCVD tubular reactor.

12. An LPCVD tubular reactor, characterized by comprising a gas extraction device for stabilizing the gas flow field according to any of claims 1 to 11.

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