CN115621117A - 一种腐蚀污迹片的挽救方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 52
- 239000003814 drug Substances 0.000 claims abstract description 50
- 230000007797 corrosion Effects 0.000 claims abstract description 49
- 238000005260 corrosion Methods 0.000 claims abstract description 49
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 239000003513 alkali Substances 0.000 claims abstract description 29
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000004809 Teflon Substances 0.000 claims abstract description 4
- 229920006362 Teflon® Polymers 0.000 claims abstract description 4
- 238000007689 inspection Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims abstract description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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Abstract
本发明涉及一种腐蚀污迹片的挽救方法,包括如下步骤:步骤一,酸腐蚀后检查出来的污迹不良片,按照类型装入特氟龙制成的片盒内,然后进行预清洗,预清洗药液槽采用SC‑1药液;步骤二,预清洗药液槽处理后,纯水槽处理时间10分钟;步骤三,进行碱腐蚀药液槽处理,碱腐蚀药液槽采用氢氧化钾溶液进行配置;步骤四,对碱腐蚀药液槽处理后的污迹不良片进行洗净,洗净采用稀释的HF药液进行金属的去除,经过清水洗净;步骤五,经过TMAH有机碱去除硅片表面的酸液残留,后续经过纯水洗净甩干后,进入检查工程。
Description
技术领域
本发明涉及腐蚀片加工技术领域,具体涉及一种腐蚀污迹片的挽救方法。
背景技术
当前8英寸硅片进行腐蚀去除机械损伤层的方法主要是采用酸腐蚀的工艺,体系为硝酸+氢氟酸,硝酸把硅氧化成二氧化硅、然后二氧化硅与氢氟酸进行反应,从而达到去除损伤层的目的;轻掺品酸腐蚀后的硅片后面抛光采用单面抛光的方法,所以有一面为腐蚀面,腐蚀面上面的污迹会影响产品的质量。
发明内容
针对现有技术存在的问题,本发明提供一种腐蚀污迹片的挽救方法,已解决上述至少一个技术问题。
本发明的技术方案是:一种腐蚀污迹片的挽救方法,其特征在于,包括如下步骤:
步骤一,酸腐蚀后检查出来的污迹不良片,按照类型装入特氟龙制成的片盒内,然后进行预清洗,预清洗药液槽采用SC-1药液;
步骤二,预清洗药液槽处理后,纯水槽处理时间10分钟;
步骤三,进行碱腐蚀药液槽处理,碱腐蚀药液槽采用氢氧化钾溶液进行配置;
步骤四,对碱腐蚀药液槽处理后的污迹不良片进行洗净,洗净采用稀释的HF药液进行金属的去除,经过清水洗净;
步骤五,经过TMAH有机碱去除硅片表面的酸液残留,后续经过纯水洗净甩干后,进入检查工程。
使用以上所述方法对酸腐蚀后的污迹不良片进行碱腐蚀返工,返工后硅片表面洁净,且光泽度稍微上升,TTV参数无影响,可以满足产品良品需求。本专利采用新的腐蚀方法,来改善酸腐蚀后硅片表面污迹的情况,利用碱腐蚀的方法,对表面有污迹的硅片,进行表面微量去除,单面去除量在1~1.5微米,可以有效的剥离掉酸腐蚀后硅片表面的污迹。
进一步优选,步骤一中,预清洗药液槽的温度在60~70℃,处理时间10分钟,所述SC-1药液的浓度在1%~5%之间。优选为1.5%浓度的SC-1药液。
进一步优选,所述预清洗药液槽的内壁增加有超声波清洗装置,所述超声波清洗装置的工作方向朝向所述预清洗药液槽的中央。预清洗采用SC-1药液加超声波的清洗方式进行,可以提高预清洗的效果。
进一步优选,所述碱腐蚀药液槽的底部增加有一震动台。从而可以在腐蚀过程中增加硅片上下摇动及转动,来保证腐蚀的均匀性。
进一步优选,所述氢氧化钾溶液的浓度在40%~60%之间。优选为48%的氢氧化钾溶液。
进一步优选,所述碱腐蚀药液槽的处理温度90~100℃,所述碱腐蚀药液槽的循环流量12L~18L/min,根据去除速率进行时间设定。
进一步优选,所述HF药液的浓度范围在1%~5%之间。优选为1%的HF药液。
进一步优选,所述TMAH的浓度范围在1%~5%之间。优选为2.5%的TMAH。腐蚀结束后采用HF+TMAH药液进行洗净甩干。
具体实施方式
具体实施例
一种腐蚀污迹片的挽救方法,包括如下步骤:
步骤一,酸腐蚀后检查出来的污迹不良片,按照类型装入特氟龙制成的片盒内,然后进行预清洗,预清洗药液槽采用SC-1药液;
步骤二,预清洗药液槽处理后,纯水槽处理时间10分钟;
步骤三,进行碱腐蚀药液槽处理,碱腐蚀药液槽采用氢氧化钾溶液进行配置;
步骤四,对碱腐蚀药液槽处理后的污迹不良片进行洗净,洗净采用稀释的HF药液进行金属的去除,经过清水洗净;
步骤五,经过TMAH有机碱去除硅片表面的酸液残留,后续经过纯水洗净甩干后,进入检查工程。
使用以上方法对酸腐蚀后的污迹不良片进行碱腐蚀返工,返工后硅片表面洁净,且光泽度稍微上升,TTV参数无影响,可以满足产品良品需求。本专利采用新的腐蚀方法,来改善酸腐蚀后硅片表面污迹的情况,利用碱腐蚀的方法,对表面有污迹的硅片,进行表面微量去除,单面去除量在1~1.5微米,可以有效的剥离掉酸腐蚀后硅片表面的污迹。
进一步优选,步骤一中,预清洗药液槽的温度在60~70℃,处理时间10分钟,SC-1药液的浓度在1%~5%之间。优选为1.5%浓度的SC-1药液。
进一步优选,预清洗药液槽的内壁增加有超声波清洗装置,超声波清洗装置的工作方向朝向预清洗药液槽的中央。预清洗采用SC-1药液加超声波的清洗方式进行,可以提高预清洗的效果。
进一步优选,碱腐蚀药液槽的底部增加有一震动台。从而可以在腐蚀过程中增加硅片上下摇动及转动,来保证腐蚀的均匀性。
进一步优选,氢氧化钾溶液的浓度在40%~60%之间。优选为48%的氢氧化钾溶液。
进一步优选,碱腐蚀药液槽的处理温度90~100℃,碱腐蚀药液槽的循环流量12L~18L/min,根据去除速率进行时间设定。
进一步优选,HF药液的浓度范围在1%~5%之间。优选为1%的HF药液。
进一步优选,TMAH的浓度范围在1%~5%之间。优选为2.5%的TMAH。腐蚀结束后采用HF+TMAH药液进行洗净甩干。
以上仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (8)
1.一种腐蚀污迹片的挽救方法,其特征在于,包括如下步骤:
步骤一,酸腐蚀后检查出来的污迹不良片,按照类型装入特氟龙制成的片盒内,然后进行预清洗,预清洗药液槽采用SC-1药液;
步骤二,预清洗药液槽处理后,纯水槽处理时间10分钟;
步骤三,进行碱腐蚀药液槽处理,碱腐蚀药液槽采用氢氧化钾溶液进行配置;
步骤四,对碱腐蚀药液槽处理后的污迹不良片进行洗净,洗净采用稀释的HF药液进行金属的去除,经过清水洗净;
步骤五,经过TMAH有机碱去除硅片表面的酸液残留,后续经过纯水洗净甩干后,进入检查工程。
2.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:步骤一中,预清洗药液槽的温度在60~70℃,处理时间10分钟,所述SC-1药液的浓度在1%~5%之间。优选为1.5%浓度的SC-1药液。
3.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述预清洗药液槽的内壁增加有超声波清洗装置,所述超声波清洗装置的工作方向朝向所述预清洗药液槽的中央。
4.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述碱腐蚀药液槽的底部增加有一震动台。
5.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述氢氧化钾溶液的浓度在40%~60%之间。
6.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述碱腐蚀药液槽的处理温度90~100℃,所述碱腐蚀药液槽的循环流量12L~18L/min,根据去除速率进行时间设定。
7.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述HF药液的浓度范围在1%~5%之间。
8.根据权利要求1所述的一种腐蚀污迹片的挽救方法,其特征在于:所述TMAH的浓度范围在1%~5%之间。
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