CN115586594A - Design method of ultraviolet broadband high-reflection dispersion mirror - Google Patents
Design method of ultraviolet broadband high-reflection dispersion mirror Download PDFInfo
- Publication number
- CN115586594A CN115586594A CN202211310587.7A CN202211310587A CN115586594A CN 115586594 A CN115586594 A CN 115586594A CN 202211310587 A CN202211310587 A CN 202211310587A CN 115586594 A CN115586594 A CN 115586594A
- Authority
- CN
- China
- Prior art keywords
- layer
- dispersion
- reflection
- cavity
- ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The ultraviolet broadband high-reflection dispersion mirror structure sequentially comprises a substrate layer, an ultraviolet high-reflection metal layer, a Gires-Tournois-like cavity, a chirp dispersion layer and a surface anti-reflection layer from bottom to top; the basic expression of the dispersive mirror structure is:
s represents a substrate, C represents an ultraviolet high-reflection metal layer, G represents a Gires-Tournois-like cavity,
representing the chirped dispersion layer (a) j <a k )，
Represents a surface anti-reflection layer, A represents air, H and L respectively represent optical thicknesses of
The high refractive index material film layer and the low refractive index material film layer. The invention utilizes the ultraviolet high-reflection metal layer as the reflection layer, and simultaneously improves the reflectivity by constructing a Gires-Tournois-like cavity and a chirp dispersion layer on the metal film and carries out dispersion compensation. And the ratio of the thicknesses of the H layer and the L layer is reduced in the initial structure, so that the low refractive index layer is dominant in the film layer design, the absorption loss of laser in Gires-Tournois-like cavity oscillation is reduced through the macroscopic regulation and control of the distribution ratio of the film layer material, and finally, the ultraviolet broadband high-reflection dispersion mirror taking the low-absorption material as the main body is designed.
Description
Technical Field
The invention belongs to the field of ultrafast laser films, in particular relates to an ultraviolet broadband high-reflection dispersion mirror in an ultraviolet ultrafast laser, and discloses an optical element for regulating and controlling dispersion of an ultraviolet ultrafast laser system.
Background
In recent decades, femtosecond laser, as an important means for researching atomic and molecular scale microscopic phenomena, has shown great application potential in the aspects of time-resolved spectroscopy, ultra-wideband optical communication, micro-nano manufacturing and the like. One fundamental limitation of femtosecond ultrashort pulse generation is the pulse broadening phenomenon caused by material dispersion and other nonlinear effects in the system, which leads to the reduction of pulse peak energy and beam quality, and the requirement of passing laserThe external device can regulate and compensate the dispersion of the whole system, which is significant for stably outputting high-quality ultrafast pulse laser. Common dispersion compensating elements are prisms, gratings and dispersive mirrors. Wherein, the prism and the grating are easy to introduce high-order dispersion, and the requirement of the elements on the angle precision is higher when the dispersion is corrected, which is inconvenient for tuning. In contrast, a dispersive mirror can provide dispersion that can be tuned over a large range with very low loss over an ultra-wide or ultra-narrow bandwidth. The system with the dispersion mirror as the dispersion regulation and control element can be compressed more compactly, and is convenient to integrate. In recent years, the film system design software of the dispersive mirror is continuously optimized, and the preparation process is gradually developed. At present, the maximum available 15000fs of the dispersive mirror is 2 The dispersion of (2) can reach a frequency multiplication in bandwidth to carry out dispersion compensation on the system.
As the laser pulse width is further compressed, the laser center wavelength shifts toward the ultraviolet band. The types of the ultraviolet lasers reported at present mainly include solid-state ultraviolet lasers, gas ultraviolet lasers, and excimer lasers among the gas ultraviolet lasers. The ultraviolet laser has obvious advantages in laser processing, namely, the short wavelength can process parts with smaller size; the chemical bond of the material is directly destroyed during processing, and a small heat affected zone is provided for the cold treatment of the material; most of the materials can effectively absorb ultraviolet light, and can be used for processing materials which cannot be processed by infrared and visible light lasers. The ultraviolet laser also has the advantages of compact structure, high average power, easy maintenance, simple operation, low cost and high productivity, and is widely applied to the laser processing fields of bioengineering, material preparation, all-optical device manufacturing, integrated circuit boards, semiconductor industry and the like.
The stable operation of the ultraviolet laser also needs to be subjected to dispersion compensation. The invention aims to design a low-dispersion high-reflection broadband dispersion mirror matched with the current ultraviolet laser, which has important significance for improving the quality of light beams output by the ultraviolet laser.
Compared with the infrared broadband dispersion mirror which also uses metal and medium as film system materials, the invention is used in the initial design
(a p <1)(b q >1) Gires-Tournois-like lumen of the general formula
(a j <a k ) The chirp dispersion layer is a general formula, replaces the original conventional design that a common HL layer is used as a basic film system structure, artificially and greatly improves the proportion of the thickness of a low refractive index layer in the whole film system structure during initial design, and macroscopically reduces the absorption of the film layer. In the optimization process, a low-absorption film structure with a high LH (lutetium) layer thickness ratio is selected to replace a conventional random optimization design capable of providing the same dispersion compensation and the same reflectivity, so that an electric field peak value exists in the low-absorption film with a low refractive index, the film system absorption is further reduced, and the film threshold value is improved. The film layer of the low-absorption and low-refractive index material always plays a dominant role in the film thickness ratio in the initial design and the optimized design (a) p <1)(b q >1)(a j <a k ) Overall, the overall absorption coefficient of the membrane system structure is reduced. The design of the multilayer dielectric film layer mainly made of low-refractive-index and low-absorption materials can more obviously show the excellent reflection performance of the metal with the characteristic of high ultraviolet reflection when being combined with the metal film layer with the characteristic of high ultraviolet reflection, and overcomes the defects of serious ultraviolet absorption and low reflectivity of a common film system.
Disclosure of Invention
The invention reduces the thickness of the high-refractive-index high-absorption layer by increasing the thickness of the low-refractive-index low-absorption layer in the initial structure design, and is used for
Gires-Tournois-like lumen of the formula and
(a j <a k ) The chirp dispersion layer is a general chirp dispersion layer, and replaces the original conventional design using a common HL layer as a basic film system structure. And constructing a Gires-Tournois cavity structure and a chirp dispersion film layer. Always kept in the optimization processThe film layer of the low-absorption and low-refractive index material plays a dominant role in the film thickness ratio (a) j <a k ). The ratio of the thickness of the L layer to the thickness of the H layer is increased by adjusting the periodicity and the cavity thickness, and the electric field peak value is designed in the L layer and the low absorption material layer, so that the absorption of the film system structure to ultraviolet light is reduced. And reasonably adjusting parameters of the initial structure, and designing ultraviolet broadband high-reflection dispersion mirrors with different dispersion amounts, reflectivity and bandwidths. Compared with the traditional mode of dispersion compensation outside the cavity, the ultra-fast ultraviolet laser system has a more compact structure.
The technical scheme for solving the problem is as follows:
on one hand, the invention provides an ultraviolet broadband high-reflection dispersion mirror structure which is characterized by sequentially comprising a basal layer, an ultraviolet high-reflection metal layer, a Gires-Tournois-like cavity, a chirp dispersion layer and a surface anti-reflection layer from bottom to top; the basic expression of the dispersive mirror structure is as follows:
s represents a substrate, C represents an ultraviolet high-reflection metal material film layer, G represents a Gires-Tournois-like cavity, and the structural general formula of the Gires-Tournois-like cavity is as follows:
wherein
And
is a chamber wall, n x A value between 1 and 20, and n y A value between 1 and 10, a p And b q Is the cavity coefficient, a p Has a value in the range of 0 to 1, b q Has a value range of 1-3, m z The thickness coefficient of the cavity is 1-5;
is chirp dispersionGeneral structural formula of layer, in particular, emphasis is placed on the requirement a j <a k The value range of the two is a number between 0 and 3, m g The value range is between 1 and 8;
is a surface anti-reflection layer, n 4 Is in the range of 1-5.
Represents a surface anti-reflection layer, A represents air, H and L respectively represent optical thicknesses of
The high refractive index material film layer and the low refractive index material film layer.
By adjusting n x And n y Can adjust the thickness of the reflecting layer with the two ends of the cavity as the cavity wall, n x A value between 1 and 20, and n y The value is between 1 and 10. a is a p And b q Is the cavity coefficient, a p Has a value in the range of 0 to 1, b q The value range of (A) is between 1 and 3. m is z The value is between 1 and 5, and the length of the cavity is controlled; these parameters jointly determine the performance of the Gires-Tournois-like cavity structure, control the cavity structure reflection and the compensation capability for dispersion from multiple angles, and also make the Gires-Tournois-like cavity structure have better directivity and good plasticity when optimized and adjusted.
The material of the substrate layer is quartz glass, JGS1, BK7 and CaF 2 Any one of them.
The material of the ultraviolet high-reflectivity metal reflecting layer can be Al or Cu, and the appropriate thickness is selected according to the reflectivity requirement. The larger the value is within a certain range, the higher the reflectivity of the film layer is.
The general structural formula of the Gires-Tournois-like cavity is
By adjusting n x And n y Can adjust the thickness of the reflecting layer with the two ends of the cavity as the cavity wall, n x A value between 1 and 20, and n y The value is between 1 and 10. a is a p And b q Is the cavity coefficient, a p Has a value in the range of 0 to 1, b q The value range of (A) is between 1 and 3. m is z The value is between 1 and 5, and the length of the cavity is controlled. The thickness ratio of the H layer to the L layer is properly reduced in the cavity, the thickness ratio of the high-refractive-index high-absorption film layer in the cavity is reduced while the requirements for designed dispersion and reflectivity are met, the absorption and loss of laser in the cavity during oscillation are reduced, and the reflection performance of a Gires-Tournois cavity-like structure is further improved. These parameters jointly determine the performance of the Gires-Tournois-like cavity structure, control the cavity structure reflection from multiple angles and the compensation capability for dispersion, and also enable the Gires-Tournois-like cavity structure to have better directivity and good plasticity when being optimized and adjusted.
The structural general formula of the chromatic dispersion chirped layer is
Coefficient of chirp a j And a k Takes a value between 0 and 3, and (a) j <a k ) The coefficient of the L layer is larger than that of the H layer, and the thickness of the high absorption material is reduced by increasing the thickness of the low absorption material. Reasonable selection of H layer and LThe thickness ratio of the layers is designed to introduce the peak value of the electric field into the low-refractive-index layer, so that almost all electric field peak values exist in the low-absorption low-refractive-index material film layer, the total absorption of the film layer is greatly reduced, and the threshold value is improved. m is g The value ranges from 1 to 8 and is the number of cycles.
On the other hand, the invention also provides a design method of the ultraviolet broadband high-reflection dispersion mirror structure, which comprises the following steps:
1. selecting proper high-low refractive index material according to the requirements of the required design of a dispersion mirror, including dispersion amount, reflectivity, bandwidth of a laser working waveband and transmittance of a pumping waveband, wherein the high-low refractive index material comprises ZrO 2 、Al 2 O 3 、HfO 2 The material of the oxide is equal, and the material of the low refractive index is generally SiO 2 ,MgF 2 ,YF 3 ,AlF 3 ,LaF 3 Refractive index n of high and low refractive index material H 、n L Is obtained by inversion in an actual coating experiment.
2. The ultraviolet broadband high-reflection dispersion mirror structure is characterized by sequentially comprising a substrate layer, an ultraviolet high-reflection metal layer, a Gires-Tournois-like cavity, a chirp dispersion layer and a surface high anti-reflection layer from bottom to top; the basic expression of the dispersive mirror structure is as follows:
s represents a substrate, C represents an ultraviolet high-reflection metal material film layer, G represents a Gires-Tournois cavity-like structure, and the structural general formula of the Gires-Tournois cavity-like structure is
Representing a chirped dispersion layer (a) j <a k )，
Representing a surface anti-reflection layer, A representing air, H and L representing optical thicknesses, respectivelyDegree of
The high refractive index material film layer and the low refractive index material film layer.
3. After the initial structure parameters of the dispersive mirror are preliminarily selected, corresponding optimization targets are set according to the designed requirements of the dispersive mirror, wherein the optimization targets comprise group delay dispersion values, reflectivity, transmissivity and the wavelength range of a working area of the dispersive mirror, and the optimization targets are optimized for multiple times by using TFCalc and Essential MacLeod film system optimization software through simple parameters, optimal parameters and a pin algorithm to obtain the final optimization result based on the initial structure parameters.
4. And observing whether the final result meets the index requirement required by the ultraviolet broadband high-reflection dispersion mirror. If the group delay dispersion requirement of the required dispersion mirror is not met, the number m of the periods of the chirp layer is increased by increasing the thickness and the number of layers of the low-refractive-index layer g Simultaneously adjusting the Gires-Tournois cavity structure coefficient a p ，b q ，m z Adjusting the cavity type and the cavity thickness, and repeating the step 3 until the requirements of the dispersion mirror are finally met; if the reflectivity requirement of the required dispersion mirror working wave band can not be met, the thickness of the metal reflecting layer and the Gires-Tournois cavity wall thickness parameter n are changed x The reflectivity is improved, meanwhile, the ratio of the thickness of the L layer to the thickness of the H layer in the cavity structure in the chirped film system is properly reduced, the reflectivity of the chirped layer is improved, and the step 3 is repeated until the requirements of the dispersion mirror are finally met; if the threshold requirement of the dispersion mirror cannot be met, the thickness of the low-refractive-index layer and the position of the cavity structure are adjusted to enable the electric field peak value to exist in the low-refractive-index layer and the low-absorption layer as much as possible, and the step 3 is repeated until the maximum value is reachedFinally, the requirements of the dispersion mirror are met.
5. Finally, the ultraviolet broadband high-reflection dispersion mirror structure is obtained.
Compared with the prior art, the invention has the following beneficial effects:
1. use of
The structural design of the Gires-Tournois cavity structure increases the film thickness ratio of the low-refractive index low-absorption film layer, reduces the thickness ratio of the high-refractive index high-absorption layer, reduces the absorption of laser in the cavity during oscillation, reduces the loss of the laser, and uses a j Ha k L，(a j <a k ) The basic structure replaces a common quarter-wavelength HL layer to construct a chirp dispersion compensation structure, reduces the absorption of a film layer macroscopically, artificially increases the specific gravity of the thickness of the film layer of the low-refractive-index material, meets the requirements on dispersion and bandwidth, and introduces the peak value of an electric field into the film layer where the low-refractive-index low-absorption material is located.
2. The multi-layer medium structure mainly made of the low-absorption low-refractive-index film layer material is combined with the characteristic metal with strong reflectivity in an ultraviolet band, and the high reflection characteristic of the metal layer in the ultraviolet band can be more efficiently utilized because the outer-layer medium multi-layer structure mainly made of the low-absorption low-refractive-index material absorbs ultraviolet light low.
Drawings
Fig. 1 is a schematic diagram of the structure of the ultraviolet broadband high reflection dispersion mirror of the present invention.
In the figure: 1-basal layer, 2-ultraviolet high reflection metal layer, 3-periodic Gires-Tournois cavity structure, 4-chirp dispersion layer and 5-surface anti-reflection layer.
FIG. 2 is a film system structure diagram of an example 1 of the structure of the ultraviolet broadband high reflection dispersion mirror according to the present invention.
Fig. 3 is the final film structure of example 1.
FIG. 4 is a reflection spectrum graph of example 1.
Fig. 5 is a graph of group delay dispersion of example 1.
Detailed Description
The following detailed description of specific embodiments of the invention refers to the accompanying drawings.
Fig. 1 is a schematic structural diagram of the ultraviolet broadband high-reflection dispersion mirror of the present invention, which comprises, from bottom to top, a 1-substrate layer, a 2-ultraviolet high-reflection metal layer, a 3-periodic Gires-Tournois cavity structure, a 4-chirped dispersion layer, and a 5-surface anti-reflection layer.
The specification of the required dispersive mirror for example 1 is: group delay dispersion value-20 s 2 @290-360nm, reflectivity 80 +/-2%, and required reflectivity at central wavelength of 325nm>90％。
The design steps are as follows:
1. according to the group delay dispersion and bandwidth requirement, the dispersion amount is relatively large, the bandwidth is wide, so that the high-refractive-index material Al with high refractive index is selected 2 O 3 The low refractive index material is SiO 2 The refractive index parameter of the high and low refractive index materials is represented by the Cauchy formula
Determined as shown in table 1.
| A 0 | A 1 | A 2 | |
| SiO 2 | 1.45198 | 1.1899598e-2 | -3.628906e-4 |
| Al 2 O 3 | 1.62639 | 7.841e-3 | -1.50425e-5 |
TABLE 12 incorporation of initial structure according to dispersive mirror requirements
(G represents a Gires-Tournois-like cavity having a general structural formula
Selecting n 0 ＝6，a 0 ＝0.5,a 1 ＝0.6,a 2 ＝0.7,b 0 ＝2,b 1 ＝2.1,b 2 ＝2.2,n 1 ＝1,n 2 ＝2,n 3 ＝2,a 3 ＝0.7,a 4 ＝1,a 5 ＝0.8,a 6 ＝1.1,a 7 ＝0.9,a 8 ＝1.2,m 1 ＝1,m 2-3 ＝2,m 5 ＝1,n 4 ＝2,m 4-6 ＝3
S/C(HL) 6 (0.5HL)(H2L) 1 (HL) 1 (0.6HL)(H2.1L) 2 (HL) 2 (0.7HL)(H2.2L) 2 (HL) 2
(0.7HL) 3 (0.8H1.1L) 3 (0.9H1.2L) 3 (HL) 2 /A
Wherein S represents a base material and A represents an incident medium air. The structure of the film system is shown in FIG. 2.
3. Based on
S/C(HL) 6 (0.5HL)(H2L) 1 (HL) 1 (0.6HL)(H2.1L) 2 (HL) 2 (0.7HL)(H2.2L) 2 (HL) 2
(0.7HL) 3 (0.8H1.1L) 3 (0.9H1.2L) 3 (HL) 2 /A
The reference wavelength is 325nm, the incident angle is 10 degrees, the P polarization is selected, and the optimal target value of Group Delay Dispersion (GDD) is set to-20 fs 2 The reflectivity at 290-360nm is 100%, and the final film system structure is obtained by optimizing the film thickness through a variable scale algorithm (simplex parameters and optitacparameters), the reflectivity curve is shown in fig. 3, and the group delay dispersion curve is shown in fig. 5.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. The ultraviolet broadband high-reflection dispersion mirror structure is characterized by sequentially comprising a substrate, an ultraviolet high-reflection metal layer, a Gires-Tournois-like cavity, a chirp dispersion layer and a surface anti-reflection layer from bottom to top; the expression of the dispersive mirror structure is as follows:
wherein S represents a substrate, C represents an ultraviolet high-reflection metal layer, G represents a Gires-Toumois cavity-like structure,
represents a chirped dispersion layer wherein j ＜a k ，a j And a k M is a dispersion control coefficient g V is the number of periods of the chirp-dispersion layer controlled by the chirp coefficient,
representing a surface anti-reflection layer, n4 controlling the thickness of the anti-reflection layer, A representing air, H and L representing optical thicknesses of
Is highThe film comprises a refractive index material film layer and a low refractive index material film layer, wherein the thickness coefficient of the low refractive index material film layer L is larger than that of the high refractive index material film layer H.
2. The ultraviolet broadband high reflection dispersive mirror structure of claim 1, wherein the general structural formula of the Gires-Tournois-like cavity is:
wherein the content of the first and second substances,
and
is a chamber wall, n x The wall thickness coefficient is 1-20, n y The wall thickness coefficient is 1-10, and n is adjusted x And n y Thereby varying the thickness of the chamber wall; (a) p HL) and (Hb) q L) is a cavity, a p And b q Is the cavity coefficient, a p Has a value in the range of 0 to 1, b q The value range of (1) is 1-3, mz is the cavity thickness coefficient, and the value is 1-5.
3. The ultraviolet broadband highly reflective dispersive mirror structure according to claim 1, wherein said chirped dispersive layer has the general structural formula:
a j ＜a k and the value range is between 0 and 3, m g The value range is 1-8, the peak value of the electric field is introduced into the low-refractive-index layer by reducing the thickness ratio of the H layer to the L layer, so that almost all the electric field peak values exist in the low-absorption low-refractive-index material film layer, the total absorption of the film layer is reduced, and the threshold value is improved.
4. The ultraviolet broadband high reflection dispersive mirror structure according to claim 3, wherein said low refractive index material is SiO 2 ，MgF 2 ，YF 3 ，AlF 3 Or LaF 3 。
5. The ultraviolet broadband high reflection dispersing mirror structure of claim 3 wherein the high refractive index material is ZrO 2 、Al 2 O 3 Or HfO 2 。
6. The ultraviolet broadband high reflection dispersing mirror structure of claim 1 wherein n is 4 The value of (a) is in the range of 1 to 5.
7. The ultraviolet broadband high reflection dispersing mirror structure of claim 1 wherein the substrate is SiO 2 JGS1, BK7 or CaF 2 。
8. The uv broadband high reflection dispersing mirror structure of claim 1, wherein the uv high reflection metal layer is Al, cu or Rh, and the thickness is selected according to the reflectivity requirement.
9. A design method of an ultraviolet broadband high-reflection dispersion mirror structure is characterized by comprising the following steps:
1) Selecting a high-low refractive index material according to the requirements of a required design dispersion mirror, including the dispersion amount, the reflectivity and the bandwidth of a laser working waveband and the transmittance of a pumping waveband;
2) Designing an ultraviolet broadband high-reflection dispersion mirror structure, wherein the ultraviolet broadband high-reflection dispersion mirror structure sequentially comprises a substrate layer, an ultraviolet high-reflection metal layer, a Gires-like-Tournois cavity, a chirp dispersion layer and a surface high anti-reflection layer from bottom to top; the basic expression of the dispersive mirror structure is as follows:
s represents a substrate, C represents an ultraviolet high-reflection metal material film layer, G represents a Gires-Toumois cavity structure, and the general structural formula of the Gires-Toumois cavity structure is
Representing the chirped dispersion layer (a) j ＜a k )，
Represents a surface anti-reflection layer, A represents air, H and L respectively represent optical thicknesses of
The high refractive index material film layer and the low refractive index material film layer;
general formula of chirp dispersion layer, (a) j ＜a k ) The value ranges of the two are numbers between 1 and 3;
is a surface highly reflective layer, n 4 The value range of (A) is between 1 and 5;
3) Setting corresponding optimization targets including group delay dispersion value, reflectivity, transmittance and wavelength range of a working area of the dispersion mirror according to the designed requirements of the dispersion mirror, and performing multiple optimization by using TFCalc and essential MacLeod film system optimization software through simple parameters, opticoparameters and pin algorithm to obtain an optimization final result based on the initial structural parameters;
4) Observing whether the required index requirement of the ultraviolet broadband high reflection dispersion mirror is met, if the required group delay dispersion requirement of the dispersion mirror cannot be met, increasing the thickness and the number of layers of the low refractive index layer and the number m of periods of the chirp layer g Simultaneously adjusting the Gires-Tournois cavity structure coefficient a p ，b q ，m z Adjusting the cavity type and the cavity thickness, and repeating the step 3 until the requirements of the dispersion mirror are finally met; if the reflectivity requirement of the required dispersion mirror working wave band can not be met, the thickness of the metal reflecting layer and the Gires-Tournois cavity wall thickness parameter n are changed x The reflectivity is improved, meanwhile, the ratio of the thickness of the L layer to the thickness of the H layer in the cavity structure in the chirped film system is properly reduced, the reflectivity of the chirped layer is improved, and the step 3) is repeated until the requirements of the dispersion mirror are finally met; if the threshold requirement of the dispersion mirror cannot be met, the thickness of the low-refractive-index layer and the position of the cavity structure are adjusted to enable the electric field peak value to exist in the low-refractive-index layer and the low-absorption layer as much as possible, and the step 3 is repeated until the requirement of the dispersion mirror is finally met.
5) Finally, the ultraviolet broadband high-reflection dispersion mirror structure is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211310587.7A CN115586594A (en) | 2022-10-25 | 2022-10-25 | Design method of ultraviolet broadband high-reflection dispersion mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211310587.7A CN115586594A (en) | 2022-10-25 | 2022-10-25 | Design method of ultraviolet broadband high-reflection dispersion mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115586594A true CN115586594A (en) | 2023-01-10 |
Family
ID=84782321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211310587.7A Pending CN115586594A (en) | 2022-10-25 | 2022-10-25 | Design method of ultraviolet broadband high-reflection dispersion mirror |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115586594A (en) |
-
2022
- 2022-10-25 CN CN202211310587.7A patent/CN115586594A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112946796B (en) | Broadband high-reflection high-threshold low-dispersion mirror and design method thereof | |
| KR20070062589A (en) | Multiple-reflection delay line for a laser beam and resonator or short pulse laser device comprising a delay line of this type | |
| CN111221063B (en) | Intermediate infrared broadband high-reflection ultrafast laser film | |
| CN106680911B (en) | The low oscillation dispersion mirror structure of one kind and its design method | |
| JP2011154387A (en) | Multilayer mirror | |
| US6256434B1 (en) | Method and dielectric and/or semiconductor device for influencing the dispersion of electromagnetic radiation | |
| CN111916983B (en) | Infrared supercontinuum light source based on multimode chalcogenide glass optical fiber | |
| WO1999060675A1 (en) | Double chirped mirror | |
| CN111208591B (en) | Broadband high-threshold combined medium low-dispersion mirror structure and design method thereof | |
| CN111142178B (en) | Microstructure low-oscillation back coated chirped mirror and preparation method thereof | |
| CN112666641B (en) | Design method of broadband low-dispersion chirped mirror | |
| TW584742B (en) | Multilayer film optical filter, method of producing the same, and optical component using the same | |
| JP2015156487A (en) | Chirped dichroic mirror and source for broadband light pulse | |
| Ferencz et al. | Recent developments of laser optical coatings in Hungary | |
| CN109471211B (en) | Depolarization beam combiner film and design method thereof | |
| CN111722311B (en) | Composite function dispersion mirror structure | |
| CN105738989A (en) | High-dispersion lens structure based on HGTI | |
| CN115586594A (en) | Design method of ultraviolet broadband high-reflection dispersion mirror | |
| CN108508677B (en) | Supercontinuum variable frequency laser based on PPLN crystal | |
| CN102998731A (en) | Triple-band optical filter for space laser communication | |
| CN113946005B (en) | Broadband high-laser damage threshold dispersion mirror structure | |
| CN111123510A (en) | Design method of high dispersion mirror film system | |
| EP0402429A1 (en) | Multilayer optical dielectric coating | |
| Kumar et al. | Ion assisted deposition of Silica-Titania multilayer optical filter for beam steering of Nd: YAG laser | |
| Xu et al. | Design and Optimization of Red-light Reflector Using Simulation Software. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |