CN115584485A - Sealing structure for thin film deposition equipment and reaction chamber - Google Patents

Sealing structure for thin film deposition equipment and reaction chamber Download PDF

Info

Publication number
CN115584485A
CN115584485A CN202211241484.XA CN202211241484A CN115584485A CN 115584485 A CN115584485 A CN 115584485A CN 202211241484 A CN202211241484 A CN 202211241484A CN 115584485 A CN115584485 A CN 115584485A
Authority
CN
China
Prior art keywords
sealing
groove
thin film
film deposition
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211241484.XA
Other languages
Chinese (zh)
Inventor
陈庆尧
吴凤丽
刘振
刘润哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Piotech Inc
Original Assignee
Piotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Piotech Inc filed Critical Piotech Inc
Priority to CN202211241484.XA priority Critical patent/CN115584485A/en
Publication of CN115584485A publication Critical patent/CN115584485A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a sealing structure for a thin film deposition device and a reaction chamber. The sealing structure is positioned on one surface of a cavity of a reaction chamber of the thin film deposition equipment, which faces the direction of the upper cover plate, and comprises: a seal groove opened on the surface; the sealing ring is positioned in the sealing groove; the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is set to be free of dead zone when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference.

Description

Sealing structure for thin film deposition equipment and reaction chamber
Technical Field
The invention relates to a thin film deposition device, in particular to a sealing structure of a reaction chamber.
Background
The reaction conditions of different chemical film deposition are that the inside of the reaction chamber is close to vacuum and is carried out under inert atmosphere, and the sealing ring of the existing equipment is affected by the pressure difference between the inside and the outside of the chamber to extrude the wall of the sealing groove, thereby forming a dead zone.
FIG. 1 shows a reaction chamber of a thin film deposition apparatus. Fig. 2 shows a cross-sectional view of a prior art seal structure. The sealing structure may be located in the position of the sealing structure of the reaction chamber shown in fig. 1. The sealing structure is used for sealing between the upper cover plate 107 and the chamber 101. As can be seen from fig. 1 and 2, the sealing structure has the following problems: before the film deposition reaction is performed on the wafer 108, the pressure in the chamber is forcibly pumped to be close to vacuum by the air pumping device (P1) 112 through the air pumping hole below the chamber 101, the temperature in the reaction chamber is heated to the required temperature by the lifting and heating device 102, at this time, the pressure of the side, close to the reaction chamber 104, of the sealing ring 103 is far lower than the pressure of the outside, the sealing ring 103 tends to deflect towards the low-pressure chamber, so that the inner side of the sealing ring 103 further extrudes the groove wall of the sealing groove 105, the inner side is tightly attached to the groove wall of the sealing groove 105, a dead zone 106 shown in fig. 2 is formed, a part of air is mixed in the dead zone 106, and the air slowly diffuses into the reaction chamber along with the heating time, the process is affected, and the film deposition quality is reduced.
Therefore, it is necessary to solve the problems of the particle size caused by the diffusion of the air and impurities mixed in the dead space of the sealing groove into the reaction chamber, the influence on the process, and the reduction of the quality of the deposited film on the wafer.
Disclosure of Invention
The invention provides a sealing structure for thin film deposition equipment, which aims to solve the problems that air and impurities mixed in a dead zone of a sealing groove diffuse into a reaction chamber to cause granularity, influence the process and reduce the quality of a deposited film of a wafer.
The sealing structure is positioned on one surface of a cavity of a reaction chamber of the thin film deposition equipment, which faces the direction of the upper cover plate, and comprises:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is set to be free of dead zone when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference.
In one embodiment, the cavity is between the sealing groove and the reaction cavity.
In one embodiment, the vent structure is a plurality of vent slots.
In one embodiment, a vent direction of each of the plurality of vent grooves is set to coincide with an axial direction of the reaction chamber, and a height of the vent groove coincides with a height of the seal groove.
In one embodiment, the venting feature is one or more vent through holes.
In one embodiment, the one or more vent through holes extend through a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
In an embodiment, the dead zone is a closed region formed by an inner angle between the seal ring and the seal groove when the seal ring is tightly attached to an inner groove wall of the seal groove under the influence of a pressure difference, where the inner angle is an angle formed by the inner groove wall and a bottom of the seal groove.
In one embodiment, the reaction chamber is surrounded by the cavity.
In one embodiment, an inner groove wall of the seal groove is a cavity side surface.
In one embodiment, the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
The present invention also provides a reaction chamber for thin film deposition, the reaction chamber comprising: the device comprises an upper cover plate, a cavity, a reaction cavity enclosed by the cavity, an air extractor and a sealing structure.
The sealing structure is located on a surface of the cavity facing the upper cover plate direction, and includes:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is arranged so that a dead zone is not formed when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference;
the air extractor is arranged below the cavity, before deposition reaction, the air extractor pumps the air in the reaction cavity to be close to vacuum through the air extraction hole at the bottom of the cavity, and simultaneously, the air and impurities mixed in the dead zone are pumped out together through the ventilation structure, so that the air and the impurities in the dead zone are prevented from diffusing and entering the reaction cavity.
In one embodiment, the cavity is between the sealing groove and the reaction cavity.
In one embodiment, the vent structure is a plurality of vent slots.
In one embodiment, a vent direction of each of the plurality of vent grooves is set to coincide with an axial direction of the reaction chamber, and a height of the vent groove coincides with a height of the seal groove.
In one embodiment, the venting feature is one or more vent through holes.
In one embodiment, the one or more vent through holes extend through a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
In an embodiment, the dead zone is a closed region formed by an inner angle between the seal ring and the seal groove when the seal ring is tightly attached to an inner groove wall of the seal groove under the influence of a pressure difference, where the inner angle is an angle formed by the inner groove wall and a bottom of the seal groove.
In one embodiment, an inner groove wall of the sealing groove is a cavity side surface.
In one embodiment, the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
According to the invention, the plurality of vertical ventilation grooves are formed in the inner side groove wall (namely the side surface of the cavity) of the sealing groove, or the air holes are formed in the dead zone to connect the dead zone of the sealing groove with the reaction cavity, so that air and impurities in the dead zone can be pumped out, the influence of the air and the impurities on the process is reduced, and the film deposition quality is improved.
Drawings
The foregoing summary, as well as the following detailed description of the invention, will be better understood when read in conjunction with the appended drawings. It is to be noted that the figures are only examples of the claimed invention. In the drawings, like reference characters designate the same or similar elements.
FIG. 1 shows a reaction chamber of a thin film deposition apparatus;
FIG. 2 illustrates a cross-sectional view of a prior art seal structure;
FIG. 3 shows a schematic view of a seal structure according to an embodiment of the invention;
figure 4 shows a schematic view of a sealing structure according to a further embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure. While the invention will be described in connection with the preferred embodiments, there is no intent to limit its features to those embodiments. On the contrary, the invention has been described in connection with the embodiments for the purpose of covering alternatives or modifications as may be extended based on the claims of the invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be practiced without these particulars. Moreover, some of the specific details have been left out of the description in order to avoid obscuring or obscuring the focus of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Also, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," "vertical" and the like used in the following description shall be understood to refer to the orientation as it is drawn in this section and the associated drawings. The relative terms are used for convenience of description only and do not imply that the described apparatus should be constructed or operated in a particular orientation and therefore should not be construed as limiting the invention.
It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various conduits, passages, components, regions, layers and/or sections, these components, regions, layers and/or sections should not be limited by these terms, and these terms are only used to distinguish different conduits, passages, components, regions, layers and/or sections.
FIG. 1 shows a reaction chamber of a thin film deposition apparatus. As shown in fig. 1, the reaction chamber has an upper cover plate 107, a chamber 101, a reaction chamber 104 enclosed by the chamber 101, a lifting and heating device 102, a gas-extracting device (P1) 112, a gas inlet pipeline (GB) 110, and a shower panel 111.
The upper cover plate 107 and the chamber 101 are sealed by a sealing structure 109. The upper cover plate 107 and the chamber body 101 form a reaction chamber 104. A wafer 108 is positioned within the reaction chamber 104.
An air inlet pipeline 110 is arranged at the upper part of the upper cover plate 107, and a spray panel 111 is arranged at the lower part of the upper cover plate 107. The shower plate 111 delivers the reaction gas from the gas inlet 110 into the reaction chamber 104 for the deposition reaction of the wafer 108.
The lift heating apparatus 102 is used to support the wafer 108 and heat the temperature within the reaction chamber 104 to a desired temperature.
And an air extractor 112 disposed below the chamber 101 for forcibly extracting the pressure in the chamber to a near vacuum through an air extraction hole formed in the lower surface of the chamber 101.
Fig. 2 shows a cross-sectional view of a prior art seal structure. The sealing structure may be located in the position of the sealing structure of the reaction chamber shown in fig. 1. The sealing structure has an annular sealing groove 105 and an annular sealing ring 103 located in the sealing groove. Before the film deposition reaction is performed on the wafer 108, the air extractor 112 forcibly extracts the pressure in the chamber to be close to vacuum through the air extraction hole below the chamber 101, the heating device 102 is lifted to heat the temperature in the reaction chamber 104 to a required temperature, at this time, the pressure of the sealing ring 103 close to the side of the reaction chamber 104 is far lower than the outside pressure, the sealing ring 103 tends to shift towards the direction of the low-pressure reaction chamber 104, so that the inner side of the sealing ring 103 further extrudes the groove wall of the sealing groove 105, the inner side groove wall and the groove wall of the sealing groove 105 are attached more tightly, a dead zone 106 shown in fig. 2 is formed, and a part of air is mixed in the dead zone 106 and slowly diffuses into the reaction chamber along with the heating time, thereby affecting the process and reducing the film deposition quality.
In order to solve the problems that air and impurities mixed in the dead zone of the sealing groove diffuse into the reaction chamber, granularity is caused, influence is caused on the process, and the quality of a wafer deposition film is reduced, the invention provides a sealing structure for thin film deposition equipment and the reaction chamber with the sealing structure.
The sealing structure is positioned on one surface of the cavity of the reaction chamber of the thin film deposition equipment, which faces the direction of the upper cover plate, and comprises:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is set to be free of dead zone when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference.
In one embodiment, the cavity is between the sealing groove and the reaction cavity.
In one embodiment, the vent structure is a plurality of vent slots.
In one embodiment, a vent direction of each of the plurality of vent grooves is set to coincide with an axial direction of the reaction chamber, and a height of the vent groove coincides with a height of the seal groove.
In one embodiment, the venting feature is one or more vent through holes.
In one embodiment, the one or more vent through holes penetrate through a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
In one embodiment, the dead zone is a closed region formed by an inner corner of the seal groove and the seal ring when the seal ring is tightly attached to an inner groove wall of the seal groove under the influence of a pressure difference, where the inner corner is an angle formed by the inner groove wall and a bottom of the seal groove.
In one embodiment, the reaction chamber is surrounded by the cavity.
In one embodiment, an inner groove wall of the seal groove is a cavity side surface.
In one embodiment, the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
The present invention also provides a reaction chamber for thin film deposition, the reaction chamber comprising: the device comprises an upper cover plate, a cavity, a reaction cavity enclosed by the cavity, an air extractor and a sealing structure.
The sealing structure is located on a surface of the cavity facing the upper cover plate direction, and includes:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is set to ensure that no dead zone is formed when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference;
the air extractor is arranged below the cavity, before deposition reaction, the air extractor pumps the air in the reaction cavity to be close to vacuum through the air extraction hole at the bottom of the cavity, and simultaneously, the air and impurities mixed in the dead zone are pumped out together through the ventilation structure, so that the air and the impurities in the dead zone are prevented from diffusing and entering the reaction cavity.
In one embodiment, the cavity is arranged between the sealing groove and the reaction cavity.
In one embodiment, the vent structure is a plurality of vent slots.
In one embodiment, a vent direction of each of the plurality of vent grooves is set to coincide with an axial direction of the reaction chamber, and a height of the vent groove coincides with a height of the seal groove.
In one embodiment, the venting feature is one or more vent through holes.
In one embodiment, the one or more vent through holes extend through a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
In one embodiment, the dead zone is a closed region formed by an inner corner of the seal groove and the seal ring when the seal ring is tightly attached to an inner groove wall of the seal groove under the influence of a pressure difference, where the inner corner is an angle formed by the inner groove wall and a bottom of the seal groove.
In one embodiment, an inner groove wall of the sealing groove is a cavity side surface.
In one embodiment, the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
According to the invention, a plurality of vertical ventilation grooves are formed in the inner side wall (namely the side surface of the cavity) of the sealing groove, or the air holes are formed in the dead zone to connect the dead zone of the sealing groove with the reaction cavity, so that air and impurities in the dead zone can be pumped out, the influence of the air and the impurities on the process is reduced, and the film deposition quality is improved.
Figure 3 shows a schematic view of a sealing structure according to an embodiment of the invention. For ease of understanding, fig. 3 shows the seal structure in a top view. The sealing structure may be located at the position of the sealing structure 109 of the reaction chamber shown in fig. 1.
The seal structure includes a seal groove 105, a seal ring (not shown) located within the seal groove 105, and a plurality of vent grooves 301 opened on the inner groove wall of the seal groove. The inner slot wall is the slot wall closest to the reaction chamber 104. Between the sealing groove 105 and the reaction chamber 104 is a chamber body 101. The inner side groove wall is the side surface of the cavity. The ventilation direction of the ventilation groove 301 coincides with the axial direction of the chamber (or the axial direction of the reaction chamber 104), i.e., the vertical direction.
Due to the existence of the vent groove 301, when the sealing ring 103 is tightly attached to the groove wall of the sealing groove 105 under the influence of the pressure difference of the reaction cavity, a dead zone cannot be formed; the air pumping device P1 before the deposition reaction can pump out the air mixed in the sealing groove and the impurities together through the vent groove.
In one embodiment, the height of the vent slot 301 may correspond to the height of the seal slot 105.
In one embodiment, the plurality of vent slots is 4 in number.
In one embodiment, the plurality of vent slots are symmetrically distributed.
Figure 4 shows a schematic view of a sealing structure according to a further embodiment of the invention. For ease of understanding, fig. 4 shows the seal structure in a cross-sectional view. The sealing structure may be located at the position of the sealing structure 109 of the reaction chamber shown in fig. 1.
The sealing structure comprises a sealing groove 105, a sealing ring 103 positioned in the sealing groove 105, and a vent through hole 401 arranged on the dead zone 106 on the inner groove wall of the sealing groove. The vent 401 extends through the cavity between the seal and the reaction chamber to connect the dead zone 106 to the reaction chamber 104.
The dead zone is a closed area formed by the seal ring and an inner corner of the seal groove when the seal ring is tightly attached to the inner groove wall of the seal groove under the influence of pressure difference, such as 106 in fig. 2 and 4. Wherein, the inside angle of seal groove is the angle that the bottom of inboard cell wall and seal groove formed.
Before the deposition reaction, the air extractor P1 forcibly pumps the pressure in the reaction chamber to be close to vacuum through the air extracting holes, and simultaneously can also pump out the air and impurities mixed in the dead zone through the air vent, so that the air and impurities in the dead zone are prevented from diffusing into the reaction chamber, certain influence is caused on the process, and the quality of the deposited film is reduced.
In one embodiment, the vent through holes may be one or more.
The terms and expressions which have been employed herein are used as terms of description and not of limitation. The use of such terms and expressions is not intended to exclude any equivalents of the features shown and described (or portions thereof), and it is recognized that various modifications may be made within the scope of the claims. Other modifications, variations, and alternatives are also possible. Accordingly, the claims should be looked to in order to cover all such equivalents.
Also, it should be noted that although the present invention has been described with reference to the current specific embodiments, it should be understood by those skilled in the art that the above embodiments are merely illustrative of the present invention, and various equivalent changes or substitutions may be made without departing from the spirit of the present invention, and therefore, it is intended that all changes and modifications to the above embodiments be included within the scope of the claims of the present application.

Claims (19)

1. A sealing structure for a thin film deposition apparatus, characterized in that the sealing structure is located on a surface of a chamber body of a reaction chamber of the thin film deposition apparatus facing a direction of an upper cover plate, the sealing structure comprising:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is set to be free of dead zone when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference.
2. The sealing structure for a thin film deposition apparatus according to claim 1, wherein the cavity is between the sealing groove and the reaction chamber.
3. The sealing structure for a thin film deposition apparatus according to claim 1, wherein the vent structure is a plurality of vent grooves.
4. The sealing structure for a thin film deposition apparatus according to claim 3, wherein a vent direction of each of the plurality of vent grooves is set to coincide with an axial direction of the reaction chamber, and a height of the vent groove coincides with a height of the sealing groove.
5. The sealing structure for a thin film deposition apparatus according to claim 2, wherein the vent structure is one or more vent through holes.
6. The sealing structure for a thin film deposition apparatus according to claim 5, wherein the one or more vent through holes penetrate a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
7. The sealing structure for a thin film deposition apparatus according to claim 1, wherein the dead zone is a region formed by an inner angle of the seal groove and the seal ring when the seal ring is pressed against an inner groove wall of the seal groove by a pressure difference, wherein the inner angle is an angle formed by the inner groove wall and a bottom of the seal groove.
8. The sealing structure for a thin film deposition apparatus according to claim 1, wherein the reaction chamber is formed surrounded by the chamber body.
9. The sealing structure for a thin film deposition apparatus according to claim 1, wherein an inner groove wall of the sealing groove is a cavity side surface.
10. The sealing structure for a thin film deposition apparatus according to claim 1, wherein the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
11. A reaction chamber for thin film deposition, the reaction chamber comprising: the device comprises an upper cover plate, a cavity, a reaction cavity enclosed by the cavity, an air extractor and a sealing structure;
the sealing structure is located on a surface of the cavity facing the upper cover plate direction, and includes:
a seal groove opened on the surface;
the sealing ring is positioned in the sealing groove;
the ventilating structure is arranged on the inner side groove wall of the sealing groove, the inner side groove wall is the groove wall closest to the reaction cavity, and the ventilating structure is arranged so that a dead zone is not formed when the sealing ring is tightly attached to the inner side groove wall of the sealing groove under the influence of pressure difference;
the air extractor is arranged below the cavity, before deposition reaction, the air extractor pumps air in the reaction cavity to be close to vacuum through the air extracting hole in the bottom of the cavity, and simultaneously, air and impurities mixed in the dead zone are extracted together through the ventilation structure, so that the air and the impurities in the dead zone are prevented from diffusing and entering the reaction cavity.
12. The sealing structure for a thin film deposition apparatus according to claim 11, wherein the cavity is between the sealing groove and the reaction chamber.
13. The sealing structure for a thin film deposition apparatus according to claim 11, wherein the vent structure is a plurality of vent grooves.
14. The sealing structure for a thin film deposition apparatus according to claim 13, wherein a venting direction of each of the plurality of venting grooves is disposed to coincide with an axial direction of the reaction chamber.
15. The sealing structure for a thin film deposition apparatus according to claim 12, wherein the venting structure is one or more venting through holes.
16. The sealing structure for a thin film deposition apparatus according to claim 15, wherein the one or more vent through holes penetrate a cavity between the sealing groove and the reaction chamber to communicate the dead zone with the reaction chamber.
17. The sealing structure for a thin film deposition apparatus as claimed in claim 11, wherein the dead zone is a region where the sealing ring forms an inner angle with the sealing groove when the sealing ring is pressed against an inner groove wall of the sealing groove by a pressure difference, wherein the inner angle is an angle formed by the inner groove wall and a bottom of the sealing groove.
18. The sealing structure for a thin film deposition apparatus according to claim 11, wherein an inner groove wall of the sealing groove is a cavity side surface.
19. The sealing structure for a thin film deposition apparatus according to claim 11, wherein the sealing structure is used for sealing between the upper cover plate and the reaction chamber.
CN202211241484.XA 2022-10-11 2022-10-11 Sealing structure for thin film deposition equipment and reaction chamber Pending CN115584485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211241484.XA CN115584485A (en) 2022-10-11 2022-10-11 Sealing structure for thin film deposition equipment and reaction chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211241484.XA CN115584485A (en) 2022-10-11 2022-10-11 Sealing structure for thin film deposition equipment and reaction chamber

Publications (1)

Publication Number Publication Date
CN115584485A true CN115584485A (en) 2023-01-10

Family

ID=84780077

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211241484.XA Pending CN115584485A (en) 2022-10-11 2022-10-11 Sealing structure for thin film deposition equipment and reaction chamber

Country Status (1)

Country Link
CN (1) CN115584485A (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379989A (en) * 1989-08-23 1991-04-04 Ulvac Japan Ltd Differential pressure sealing apparatus
KR19980035051U (en) * 1996-12-12 1998-09-15 문정환 Closed Structure of Semiconductor Low Pressure Chemical Vapor Deposition Equipment
JPH10313017A (en) * 1997-05-12 1998-11-24 Toshiba Corp Semiconductor seal molding device and method
US20030180985A1 (en) * 2002-03-20 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing a semiconductor device and a resin sealing device therefor
JP2004099924A (en) * 2002-09-05 2004-04-02 Mitsubishi Heavy Ind Ltd Vacuum treatment system
CN101826452A (en) * 2010-03-30 2010-09-08 东莞宏威数码机械有限公司 Substrate uploading device
CN204849018U (en) * 2015-06-23 2015-12-09 中建材（内江）玻璃高新技术有限公司 High vacuum seal structure in coating chamber room
CN105220226A (en) * 2014-06-20 2016-01-06 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of tank sealed structure, tank and silicon epitaxy equipment
CN209176055U (en) * 2018-09-17 2019-07-30 东莞市艾尔玛科技有限公司 A kind of mould structure improving transcription foil adsorption effect
CN111058093A (en) * 2018-10-16 2020-04-24 北京北方华创微电子装备有限公司 Chamber sealing assembly and growth furnace
CN214404668U (en) * 2020-12-30 2021-10-15 山东天岳先进科技股份有限公司 Prevent leaking seal structure and long brilliant device
CN113832448A (en) * 2020-06-23 2021-12-24 拓荆科技股份有限公司 Semiconductor film deposition equipment and semiconductor film coating method

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379989A (en) * 1989-08-23 1991-04-04 Ulvac Japan Ltd Differential pressure sealing apparatus
KR19980035051U (en) * 1996-12-12 1998-09-15 문정환 Closed Structure of Semiconductor Low Pressure Chemical Vapor Deposition Equipment
JPH10313017A (en) * 1997-05-12 1998-11-24 Toshiba Corp Semiconductor seal molding device and method
US20030180985A1 (en) * 2002-03-20 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing a semiconductor device and a resin sealing device therefor
JP2004099924A (en) * 2002-09-05 2004-04-02 Mitsubishi Heavy Ind Ltd Vacuum treatment system
CN101826452A (en) * 2010-03-30 2010-09-08 东莞宏威数码机械有限公司 Substrate uploading device
CN105220226A (en) * 2014-06-20 2016-01-06 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of tank sealed structure, tank and silicon epitaxy equipment
CN204849018U (en) * 2015-06-23 2015-12-09 中建材（内江）玻璃高新技术有限公司 High vacuum seal structure in coating chamber room
CN209176055U (en) * 2018-09-17 2019-07-30 东莞市艾尔玛科技有限公司 A kind of mould structure improving transcription foil adsorption effect
CN111058093A (en) * 2018-10-16 2020-04-24 北京北方华创微电子装备有限公司 Chamber sealing assembly and growth furnace
CN113832448A (en) * 2020-06-23 2021-12-24 拓荆科技股份有限公司 Semiconductor film deposition equipment and semiconductor film coating method
CN214404668U (en) * 2020-12-30 2021-10-15 山东天岳先进科技股份有限公司 Prevent leaking seal structure and long brilliant device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张振厚: "真空镀膜设备用磁流体密封组件设计使用中的若干问题探讨", 真空, no. 01, 25 January 2004 (2004-01-25), pages 41 - 45 *

Similar Documents

Publication Publication Date Title
WO2014003297A1 (en) Substrate heating device and process chamber
US6786937B2 (en) Sealing method and apparatus for a fuel cell stack
KR102463842B1 (en) Device with concentric pumping for multiple pressure schemes
CN110592553B (en) Process chamber and semiconductor equipment
KR102594599B1 (en) semiconductor process device
CN103050363A (en) Symmetric plasma process chamber
CN115125514B (en) Intracavity pumping structure and semiconductor deposition equipment
CN110736345B (en) Process chamber and heat treatment furnace for SiC high-temperature oxidation process
US20210217592A1 (en) Chamber design for semiconductor processing
CN115584485A (en) Sealing structure for thin film deposition equipment and reaction chamber
GB2594192A (en) Fuel cell unit and fuel cell stack
CN106531593A (en) Exhaust device for manufacturing photomultiplier tube and operation method
US10707503B2 (en) Proton exchange membrane fuel cell with a movable membrane electrode assembly device
CN112680721B (en) PECVD coating machine
CN112687513B (en) Semiconductor processing chamber
KR101257951B1 (en) Combined vacuum pump load-lock assembly
CN111006022B (en) Liquid pressure difference type vacuum dynamic sealing mechanism
CN208250461U (en) A kind of intracavitary elevating mechanism of vacuum chamber
EP4117027A1 (en) Apparatus for processing a plurality of substrates provided with an extractor chamber
CN115125516B (en) Multi-piece type high-precision special reaction cavity
CN113532122B (en) Sealing furnace cover for aluminum ingot smelting furnace
KR102526128B1 (en) vacuum table
CN218906316U (en) Heating cavity mechanism and film laminating machine with same
CN117758239A (en) Process chamber and thin film deposition method
CN210569955U (en) Nitriding furnace for ceramic pump

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination