CN115548864A - Laser and preparation method thereof - Google Patents
Laser and preparation method thereof Download PDFInfo
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- CN115548864A CN115548864A CN202211124653.1A CN202211124653A CN115548864A CN 115548864 A CN115548864 A CN 115548864A CN 202211124653 A CN202211124653 A CN 202211124653A CN 115548864 A CN115548864 A CN 115548864A
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- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a laser and a preparation method thereof, wherein the laser comprises a heat sink layer and a first electrode layer arranged on the heat sink layer; a single crystal diamond layer disposed over the first electrode layer; a groove is formed in the single crystal diamond layer, a first electrode contact layer and an active layer are sequentially stacked in the groove, a penetrating electrode is arranged at the bottom of the groove, and the first electrode contact layer is conducted with the first electrode layer through the penetrating electrode; the surface of the single crystal diamond layer and the surface of the active layer are covered with a second electrode contact layer; and a second electrode layer is arranged on the second electrode contact layer. According to the invention, through the single crystal diamond insulating heat dissipation structure, the single crystal diamond not only has good insulating property, but also has very high heat dissipation coefficient, and the requirements of the reverse welding process that parts except for the contact electrode need to have higher insulating property and the heat dissipation coefficient needs to be high are met.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a laser and a preparation method thereof.
Background
The operating temperature is a large factor limiting the semiconductor laser, and particularly for Quantum Cascade Lasers (QCLs), the problem of heat generation caused by the high threshold value is to be solved. When the internal heating of the laser cannot be led out in time, the actual temperature of the device is increased sharply, so that the distribution change of the internal energy level of electrons is obvious, the concentration of electrons which generate effective transition is reduced sharply, the energy and the number of phonons are increased sharply, the scattering effect of the phonons is more obvious, the problem caused by the temperature rise often limits the luminous efficiency of the laser, and the high-power operation cannot be realized. And the gain interval of the laser is smaller, so that the current modulation interval is reduced, and the spectral tuning range of the laser is also reduced, so that how to make the laser radiate heat more quickly becomes the key point of the research on the structure of the laser in order to improve the performance of the device.
Disclosure of Invention
The invention aims to provide a laser structure which is different from the prior art and can improve the heat dissipation efficiency and the insulating property of a laser.
A first aspect of the present invention provides a laser comprising:
a heat sink layer;
a first electrode layer disposed over the heat sink layer;
a single crystal diamond layer disposed over the first electrode layer;
the first electrode contact layer and the active layer are sequentially stacked in a groove of the single crystal diamond layer, a through electrode is arranged at the bottom of the groove, the first electrode contact layer is conducted with the first electrode layer through the through electrode, and the surface of the active layer is flush with the surface of the single crystal diamond layer;
a second electrode contact layer covering a surface of the single crystal diamond layer and a surface of the active layer to seal the active layer in the groove;
and a second electrode layer disposed on the second electrode contact layer.
In an alternative embodiment of the first aspect of the present invention, the active layer is a layer of quantum dot material or a layer of quantum well material.
In an alternative embodiment of the first aspect of the present invention, the active layer is an InGaAs/InAlAs layer, a GaAs/AlGaAs layer or an InGaAsP layer.
In an alternative embodiment of the first aspect of the present invention, the first electrode layer and the second electrode layer are both layers of metal material.
In an optional embodiment of the first aspect of the present invention, the first electrode layer is a gold layer, a silver layer or a gold-silver laminate, and the second electrode layer is a gold layer, a silver layer or a gold-silver laminate.
In an alternative embodiment of the first aspect of the present invention, the first electrode contact layer and the second electrode contact layer are both layers of semiconductor material.
In an alternative embodiment of the first aspect of the present invention, the first electrode contact layer and the second electrode contact layer are both InP layers.
In an optional implementation manner of the first aspect of the present invention, the heat sink layer is a copper-tungsten alloy layer.
The invention provides a preparation method of a laser, which comprises the following steps:
providing a second electrode contact layer as a substrate;
growing an active layer on a surface of the second electrode contact layer by a molecular beam epitaxy process;
growing a first electrode contact layer on the active layer by a molecular beam epitaxy process;
etching the first electrode contact layer and the active layer into a designed shape by photoetching and etching processes;
growing a single crystal diamond layer on the periphery of the active layer and the first electrode contact layer and on the surface of the first electrode contact layer by adopting an atomic single-layer epitaxial growth process;
forming an electrode through hole communicated with the first electrode contact layer on the surface of the single crystal diamond through photoetching and etching processes;
depositing a through electrode in the electrode through hole by adopting a metal evaporation or magnetron sputtering process;
depositing a second electrode layer on the bottom surface of the second electrode contact layer by adopting a metal evaporation or magnetron sputtering process;
and connecting the penetrating electrode with the heat sink layer with the first electrode layer deposited on the surface through a flip chip welding mode to obtain the laser.
In an alternative embodiment of the second aspect of the present invention, the growing of the layer of single crystal diamond around the active layer and the first electrode contact layer and outside the surface of the first electrode contact layer using an atomic monolayer epitaxial growth process is performed at a temperature of 400 to 600 ℃.
The beneficial effects are that: the invention provides a laser and a preparation method thereof, wherein the laser comprises a heat sink layer and a first electrode layer arranged on the heat sink layer; a layer of single crystal diamond disposed over the first electrode layer; only a groove is formed in the single crystal diamond layer, a first electrode contact layer and an active layer are sequentially stacked in the groove, a penetrating electrode is arranged at the bottom of the groove, and the first electrode contact layer is conducted with the first electrode layer through the penetrating electrode; the surface of the single crystal diamond layer and the surface of the active layer are covered with a second electrode contact layer; and a second electrode layer is arranged on the second electrode contact layer. According to the invention, through the single crystal diamond insulating heat dissipation structure, the single crystal diamond not only has good insulating property, but also has very high heat dissipation coefficient, and the requirements of the inverted welding process that parts except the contact electrode need to have higher insulating property and the heat dissipation coefficient is high are met.
Drawings
Fig. 1 is a schematic structural diagram of a laser according to the present invention.
Fig. 2 is a flow chart of a method for manufacturing a laser according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a first aspect of the present invention provides a laser including:
the heat sink layer 10 is used for assisting the laser to dissipate heat, and in the present invention, the heat sink layer 10 is an alloy material layer, and the heat sink layer 10 is a copper-tungsten alloy layer for example;
a first electrode layer 20 disposed on the heat sink layer 10, where the first electrode layer 20 is used for connecting to a power line, and optionally, the first electrode layer 20 is a metal material layer, for example, the first electrode layer 20 may be a gold layer, a silver layer, or a gold-silver laminate;
a single crystal diamond layer 30 disposed on the first electrode layer 20; the single crystal diamond has good insulating property and very high heat dissipation coefficient, and the single crystal diamond layer 30 can well assist devices to dissipate heat; optionally, the single-crystal diamond is grown by atomic layer epitaxy with relatively slow growth speed but low-temperature growth;
a first electrode contact layer 40 and an active layer 50, which are sequentially stacked and arranged in a groove of the single crystal diamond layer 30, wherein a through electrode 60 is arranged at the bottom of the groove, the first electrode contact layer 40 is electrically connected with the first electrode layer 20 through the through electrode 60, and the surface of the active layer 50 is flush with the surface of the single crystal diamond layer 30, i.e. the shape and the size of the first electrode contact layer 40 and the shape and the size of the active layer 50 are matched with those of the groove, i.e. the first electrode contact layer 40 and the active layer 50 just fill the groove; optionally, the active layer 50 is a quantum dot material layer or a quantum well material layer, and for example, the active layer may be an InGaAs/InAlAs layer, a GaAs/AlGaAs layer, or an InGaAsP layer; optionally, the first electrode contact layer 40 is a semiconductor material layer, and for example, the first electrode contact layer may be an InP layer;
a second electrode contact layer 70 covering a surface of the single crystal diamond layer 30 and a surface of the active layer 50 to seal the active layer 50 in the groove; optionally, the second electrode contact layer 70 is also a semiconductor material layer, and for example, the second electrode contact layer 70 may also be an InP layer;
a second electrode layer 80 disposed on the second electrode contact layer 70. Optionally, the second electrode layer 80 is a metal material layer, and for example, the second electrode layer 80 may be a gold layer, a silver layer, or a gold-silver laminated layer.
The invention aims to solve a series of problems caused by the heating of a high-power Quantum Cascade Laser (QCL), and adopts a new material composition and a new device structure. In order to rapidly dissipate heat of the active region, the device uses reverse soldering, and the reverse soldering process requires high insulation for parts except for the contact electrode and high heat dissipation coefficient. A layer of single crystal diamond grows around the active layer, and the single crystal diamond not only has good insulating property but also has very high heat dissipation coefficient, so that the flip-chip welding Quantum Cascade Laser (QCL) process is satisfied. And in the process of growing the monocrystalline diamond, the low-temperature growth is selected, because the QCL active region quantum well structure is based on the strain superlattice, if the temperature is too high, an annealing effect is generated, the strain of the superlattice disappears, and the whole energy band structure is damaged.
Referring to fig. 2, a second aspect of the present invention provides a method for manufacturing a laser, including the steps of:
s100, providing a second electrode contact layer as a substrate; in the present invention, the second electrode contact layer is exemplarily made of InP;
s200, growing an active layer on the surface of the second electrode contact layer through a molecular beam epitaxy process; in the present invention, the structure of the active layer includes but is not limited to superlattice structures such as InGaAs/InAlAs, gaAs/AlGaAs, inGaAsP quantum well, etc.;
s300, growing a first electrode contact layer on the active layer through a molecular beam epitaxy process; in the present invention, the composition of the first electrode contact layer includes, but is not limited to, inP and the like;
s400, etching the first electrode contact layer and the active layer into a designed shape through photoetching and etching processes;
s500, growing a monocrystalline diamond layer on the periphery of the active layer and the first electrode contact layer and on the surface of the first electrode contact layer by adopting an atomic single-layer epitaxial growth process; in the present invention, the temperature at which the atomic monolayer epitaxial growth process is grown is 600 ℃ or less, more specifically, 400 to 600 ℃;
s600, forming an electrode through hole communicated with the first electrode contact layer on the surface of the single crystal diamond through photoetching and etching processes;
s700, depositing a through electrode in the electrode through hole by adopting a metal evaporation or magnetron sputtering process; in the present invention, the composition of the penetrating electrode is not limited to Au, ag, or the like;
s800, depositing a second electrode layer on the bottom surface of the second electrode contact layer by adopting a metal evaporation or magnetron sputtering process; before the step, thinning the second electrode contact layer by adopting processes such as polishing and the like to a specific thickness;
and S900, connecting the penetrating electrode with the heat sink layer with the first electrode layer deposited on the surface through a flip chip welding mode to obtain the laser. According to the invention, the superlattice quantum cascade laser with better insulation performance and heat dissipation performance is obtained through the monocrystal diamond insulation heat dissipation structure and the process of connecting the laser with the heat sink, and the superlattice quantum cascade laser has higher light-emitting efficiency, can work at higher temperature and has longer service life, so that the superlattice quantum cascade laser has more application scenes.
In summary, the present invention provides a laser and a method for manufacturing the same, wherein the laser includes a heat sink layer, a first electrode layer disposed on the heat sink layer; a single crystal diamond layer disposed over the first electrode layer; only a groove is formed in the single crystal diamond layer, a first electrode contact layer and an active layer are sequentially stacked in the groove, a penetrating electrode is arranged at the bottom of the groove, and the first electrode contact layer is conducted with the first electrode layer through the penetrating electrode; the surface of the single crystal diamond layer and the surface of the active layer are covered with a second electrode contact layer; and a second electrode layer is arranged on the second electrode contact layer. According to the invention, through the single crystal diamond insulating heat dissipation structure, the single crystal diamond not only has good insulating property, but also has very high heat dissipation coefficient, and the requirements of the reverse welding process that parts except for the contact electrode need to have higher insulating property and the heat dissipation coefficient needs to be high are met.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A laser, comprising:
a heat sink layer;
a first electrode layer disposed over the heat sink layer;
a single crystal diamond layer disposed over the first electrode layer;
the first electrode contact layer and the active layer are sequentially stacked in a groove of the single crystal diamond layer, a penetrating electrode is arranged at the bottom of the groove, the first electrode contact layer is conducted with the first electrode layer through the penetrating electrode, and the surface of the active layer is flush with the surface of the single crystal diamond layer;
a second electrode contact layer covering a surface of the single crystal diamond layer and a surface of the active layer to seal the active layer in the groove;
and a second electrode layer disposed on the second electrode contact layer.
2. The laser of claim 1, wherein the active layer is a layer of quantum dot material or a layer of quantum well material.
3. The laser of claim 2, wherein the active layer is an InGaAs/InAlAs layer, a GaAs/AlGaAs layer, or an InGaAsP layer.
4. The laser of claim 1, wherein the first electrode layer and the second electrode layer are both layers of metallic material.
5. The laser of claim 4, wherein the first electrode layer is a gold layer, a silver layer, or a gold-silver stack, and the second electrode layer is a gold layer, a silver layer, or a gold-silver stack.
6. The laser of claim 1, wherein the first electrode contact layer and the second electrode contact layer are both layers of semiconductor material.
7. The laser of claim 6, wherein the first electrode contact layer and the second electrode contact layer are both InP layers.
8. The laser according to any of claims 1-7, wherein the heat sink layer is a copper-tungsten alloy layer.
9. A preparation method of a laser is characterized by comprising the following steps:
providing a second electrode contact layer as a substrate;
growing an active layer on a surface of the second electrode contact layer by a molecular beam epitaxy process;
growing a first electrode contact layer on the active layer by a molecular beam epitaxy process;
etching the first electrode contact layer and the active layer into a designed shape by photoetching and etching processes;
growing a monocrystalline diamond layer on the periphery of the active layer and the first electrode contact layer and on the surface of the first electrode contact layer by adopting an atomic single-layer epitaxial growth process;
forming an electrode through hole communicated with the first electrode contact layer on the surface of the single crystal diamond through photoetching and etching processes;
depositing a through electrode in the electrode through hole by adopting a metal evaporation or magnetron sputtering process;
depositing a second electrode layer on the bottom surface of the second electrode contact layer by adopting a metal evaporation or magnetron sputtering process;
and connecting the penetrating electrode with the heat sink layer with the first electrode layer deposited on the surface through a flip chip welding mode to obtain the laser.
10. The method of claim 9, wherein growing the layer of single crystal diamond around the active layer and the first electrode contact layer and outside the surface of the first electrode contact layer using an atomic single layer epitaxial growth process is performed at a temperature of 400-600 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211124653.1A CN115548864A (en) | 2022-09-15 | 2022-09-15 | Laser and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211124653.1A CN115548864A (en) | 2022-09-15 | 2022-09-15 | Laser and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114069389A (en) * | 2021-11-16 | 2022-02-18 | 深圳斯玛特传感技术有限公司 | Quantum cascade laser |
| CN114069389B (en) * | 2021-11-16 | 2024-07-09 | 深圳斯玛特传感技术有限公司 | Quantum cascade laser |
-
2022
- 2022-09-15 CN CN202211124653.1A patent/CN115548864A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114069389A (en) * | 2021-11-16 | 2022-02-18 | 深圳斯玛特传感技术有限公司 | Quantum cascade laser |
| CN114069389B (en) * | 2021-11-16 | 2024-07-09 | 深圳斯玛特传感技术有限公司 | Quantum cascade laser |
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