CN115548659A - Filtering patch antenna applied to industrial field integrated HMSIW cavity - Google Patents
Filtering patch antenna applied to industrial field integrated HMSIW cavity Download PDFInfo
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- CN115548659A CN115548659A CN202211152023.5A CN202211152023A CN115548659A CN 115548659 A CN115548659 A CN 115548659A CN 202211152023 A CN202211152023 A CN 202211152023A CN 115548659 A CN115548659 A CN 115548659A
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- 239000002184 metal Substances 0.000 claims abstract description 36
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 230000003071 parasitic effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000010354 integration Effects 0.000 claims abstract description 9
- 238000004891 communication Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 5
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- 238000013461 design Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
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Abstract
The invention relates to a filtering patch antenna of a HMSIW cavity applied to industrial field integration, belonging to the field of wireless communication and comprising a dielectric substrate, a metal grounding plate, an antenna filtering structure and an HMSIW single-cavity antenna; the antenna filtering structure comprises an inverted E-shaped structure, a rectangular structure and metal through holes uniformly distributed on the outer side of the rectangular structure; the HMSIW single-cavity antenna comprises a rectangular radiation patch, a feeder line, two L-shaped gaps and 62 metal through holes, wherein the two L-shaped gaps and the 62 metal through holes are distributed on one side of the rectangular radiation patch, which is provided with the feeder line, and two sides connected with the side; the rectangular structure of the coupling parasitic patch resonator is positioned on one side, opposite to the feeder line, of the rectangular radiation patch of the HMSIW single-cavity antenna, and the inverted E-shaped structure is arranged on the metal grounding plate between the rectangular structure of the coupling parasitic patch resonator and the rectangular radiation patch of the HMSIW single-cavity antenna.
Description
Technical Field
The invention belongs to the field of wireless communication, and relates to a filtering patch antenna applied to an industrial field integrated HMSIW cavity.
Background
The filter and the antenna both belong to important microwave devices in modern high-integration systems, and the filter antenna has both a filtering function and a radiation function, can be used for reducing different-frequency coupling between antenna units with different frequency bands and close distances, and plays a great role in improving signal quality and improving the overall communication performance of the system. The design of the filter and the antenna in a fusion mode can eliminate the loss generated by the cascade matching section of the filter and the antenna, is beneficial to the miniaturization of the antenna, and has wide application prospect in the industrial field of integrated and multifunctional development.
In the current mainstream plane transmission structure, a microstrip line transmission structure is easy to integrate, but has large loss and small capacity; although the traditional metal waveguide structure can effectively reduce loss, the traditional metal waveguide structure has a large volume structure and high processing cost, is not easy to integrate, and is difficult to meet the development requirements of future wireless systems. The Substrate Integrated Waveguide (SIW) structure not only has the advantages of low loss, high Q value, large capacity, high integration, low processing cost and the like of the traditional rectangular metal waveguide cavity structure, but also has the characteristic that microstrip lines are easy to cascade with different plane structures.
Disclosure of Invention
In view of this, the present invention provides a filtering patch antenna applied to an integrated HMSIW cavity in an industrial field, and aims to solve the problems of loss of a cascaded matching section of a conventional filter and an antenna and miniaturization of the antenna.
In order to achieve the purpose, the invention provides the following technical scheme:
a filtering patch antenna applied to an industrial field integrated HMSIW cavity comprises a dielectric substrate, a metal grounding plate, an antenna filtering structure and an HMSIW single-cavity antenna; the metal grounding plate is arranged below the dielectric substrate;
the antenna filtering structure comprises a coupling parasitic patch resonator and a first HMSIW resonant cavity; the coupling parasitic patch resonator comprises an inverted E-shaped structure and a rectangular structure; the rectangular structure is arranged on the dielectric substrate, the inverted-E-shaped structure is an inverted-E-shaped groove etched in the metal grounding plate, the first HMSIW resonant cavity comprises 25 metal through holes, the metal through holes are uniformly arranged on the outer side of the rectangular structure, and the metal through holes penetrate through the rectangular structure, the dielectric substrate and the metal grounding plate;
the HMSIW single-cavity antenna is arranged on the dielectric substrate and comprises a rectangular radiation patch, a feeder line, two L-shaped slots and a second HMSIW resonant cavity; the two L-shaped gaps are symmetrically etched on the rectangular radiation patch, and the feeder line is connected to the rectangular radiation patch between the two L-shaped gaps; the second HMSIW resonant cavity comprises 62 metal through holes, is distributed on one side of the rectangular radiation patch with the feeder line and two side edges connected with the side, and penetrates through the rectangular radiation patch, the dielectric substrate and the metal grounding plate;
the rectangular structure of the coupling parasitic patch resonator is positioned on one side, opposite to the feeder line, of the rectangular radiating patch of the HMSIW single-cavity antenna, and the inverted E-shaped structure is etched on the metal grounding plate between the rectangular structure of the coupling parasitic patch resonator and the rectangular radiating patch of the HMSIW single-cavity antenna.
Furthermore, the middle part of the reverse E-shaped structure is connected with the grounding plate and is combined with the open slot on the grounding plate to form a double-spiral gap coupling DGS structure, and the double-spiral gap coupling DGS structure is formed by connecting a T-shaped structure rectangular slot and two I-shaped structure rectangular slots with the grounding plate.
Furthermore, the sizes of the metal through holes in the first HMSIW resonant cavity and the second HMSIW resonant cavity are both 1mm, and the center distances of the metal through holes are both 1.5mm.
Furthermore, the HMSIW single-cavity antenna adopts a CPW feeding mode, and the length of a feeder line is 24.3mm, and the width of the feeder line is 3mm.
Further, the filtering patch antenna based on the HMSIW cavity works in a 2.84GHz frequency band, the 10db bandwidth is 260MHz, and the relative bandwidth is 9.2%.
Further, the rectangular radiation patch is 66.5mm long and 50mm wide; the length of the rectangular structure coupling parasitic patch is 38.5mm, and the width of the rectangular structure coupling parasitic patch is 17.3mm.
Furthermore, a 5.4mm interval is arranged between the rectangular radiation patch and the rectangular structure coupling parasitic patch, and the width of the double-spiral gap coupling DGS structure gap is 0.4mm.
The invention has the beneficial effects that: the invention utilizes HMSIW to reduce the size of the antenna by cutting the magnetic wall on the central symmetry plane to generate a half-mode resonance mode on the basis of a rectangular SIW structure, and designs a miniaturized single-cavity antenna. On the basis of a single-cavity antenna, a transmission pole and a transmission zero are introduced by adopting a coupling parasitic microstrip patch mode, so that the filtering effect of the high-frequency band part of the antenna is realized; the double-spiral gap DGS structure is used for achieving the filtering effect of the low-frequency band portion of the antenna, and therefore the design of the filtering patch antenna is achieved. The invention uses the traditional Rogers RO5880 as a dielectric substrate and adopts a three-layer structure of 'patch-substrate-grounding plate'. The invention realizes the filtering performance and the radiation performance of the filtering antenna, and simultaneously has the advantages of miniaturization, simple structure, low profile and the like.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof.
Drawings
For a better understanding of the objects, aspects and advantages of the present invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a filter structure according to the present invention, wherein (a) is a rectangular structure and an HMSIW resonant cavity, and (b) is an inverted E-shaped structure;
FIG. 2 is a schematic diagram of a patch antenna according to the present invention;
fig. 3 is a schematic structural diagram of a filtering patch antenna based on an HMSIW cavity according to the present invention, wherein (a) is a schematic structural diagram of a rectangular structure of an HMSIW single-cavity antenna and a coupling parasitic patch, and (b) is a schematic structural diagram of an inverted E-shape;
FIG. 4 is a diagram of E-plane and H-plane at 2.71GHz of the dual-band microstrip filter antenna, in which (a) is the diagram of E-plane and (b) is the diagram of H-plane;
FIG. 5 is an E-plane view and an H-plane view of the dual-band microstrip filter antenna at 2.81GHz, wherein (a) is the E-plane view and (b) is the H-plane view;
FIG. 6 is an E-plane view and an H-plane view of the dual-band microstrip filter antenna at 2.93GHz, wherein (a) is the E-plane view and (b) is the H-plane view;
FIG. 7 shows a dual-band microstrip filter antenna S 11 (return loss) plot;
fig. 8 is a gain diagram for a dual-band microstrip filter antenna.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Wherein the showings are for the purpose of illustration only and not for the purpose of limiting the invention, shown in the drawings are schematic representations and not in the form of actual drawings; for a better explanation of the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "front", "rear", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not an indication or suggestion that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes, and are not to be construed as limiting the present invention, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.
As shown in fig. 1 (a) and (b), fig. 2, fig. 3 (a) and (b), a filtering patch antenna based on HMSIW cavity comprises a filtering structure and an HMSIW single-cavity antenna;
the antenna filtering structure is based on an HMSIW resonant cavity and a coupling parasitic patch, the HMSIW resonator comprises 25 metal through holes which are identical in shape and 1mm in diameter, the metal through holes are arranged at the upper edge of a rectangular structure, and the distance between circle centers is 1.5mm; the coupled parasitic patch resonator includes an inverted E-shaped structure and a rectangular structure. In the coupling parasitic patch resonator, the middle part of an inverted E-shaped structure is connected with GND and forms a double-spiral slot coupling DGS structure with a slotted combination on the GND, and the rectangular structure is positioned at the upper end of the antenna rectangular radiation patch and forms coupling with the antenna radiation patch.
The HMSIW single-cavity antenna comprises an HMSIW resonator, a rectangular radiation patch, a feeder line and an L-shaped slot, wherein the L-shaped slot is symmetrically etched on the large rectangular patch, the HMSIW resonators are arranged at the left edge, the upper edge and the lower edge of the rectangular patch, the HMSIW resonators comprise 62 metal through holes and are arranged at the left edge, the right edge and the lower edge of the rectangular radiation patch of the antenna, and the distance between the centers of circles is 1.5mm.
The L-shaped gaps are the same in size and are symmetrically distributed at two ends of the feeder line, and the width of each gap is 0.5mm.
The HMSIW single-cavity antenna adopts a CPW feeding mode, and the length of a feeder line is 24.3mm, and the width of the feeder line is 3mm.
The metal via holes are identical in size and circle center distance, and the circle center distance is 1.5mm.
The filtering patch antenna based on the HMSIW cavity works in a 2.84GHz frequency band, the 10db bandwidth is 260MHz, and the relative bandwidth is 9.2%.
The HMSIW single-cavity antenna adopts a three-layer structure of a patch-substrate-ground plate and is arranged on a Rogers RO5880 dielectric substrate.
And a 5.4mm interval is arranged between the rectangular radiation patch and the rectangular structure coupling parasitic patch.
The lengths of the respective portions of the filter patch antenna are in units of (mm) as shown in table 1.
TABLE 1
| L | Lf | La | Lc | Lm |
| 66.5mm | 9mm | 14.3mm | 1mm | 28mm |
| Lp | Ls | p | S1 | d |
| 17.3mm | 8.5mm | 1.5mm | 0.4mm | 1mm |
| W | Wf | Wa | Wc | Wm |
| 50mm | 3mm | 0.5mm | 6.5mm | 44mm |
| Wp | Ws | P1 | S2 | |
| 38.5mm | 4.2mm | 1.4mm | 1.9mm |
The double-spiral gap coupling DGS structure in the filter structure is formed by a T-shaped structure and two I-shaped structure rectangular grooves, the edge of the T-shaped structure is connected with the two I-shaped structures and the GND respectively to form the double-spiral gap coupling DGS structure, and the gap width is 0.4mm. The double-spiral-shaped gap coupling DGS structure is provided with 8 90-degree bends, and is used for obtaining band-stop characteristics and slow-wave characteristics.
The dual-frequency microstrip band-pass filter has the advantages of small size and simple structure. The main parameter index of the HMSIW filtering patch antenna is S 11 (return loss) and gain, and in particular, the S parameter diagram is shown in fig. 4, from (a) and (b) in fig. 4, the HMSIW-filter patch antenna can have three in-band resonance points, the resonance frequencies are 2.71GHz, 2.81GHz and 2.93GHz, respectively, the measured center frequency is 2.84ghz, the 10db bandwidth is 260MHz, the relative bandwidth is 9.2%, and the gain is 5.75dBi. From S11 and the gain diagram, it can be seen that the antenna has an out-of-band transmission zero at low frequency and at high frequency, respectively, resulting in a good filtering effect. The antenna size was only 66.5mm 50mm and was fabricated using a 1.575mm thick dielectric plate made of Rogers RO5880 material.
The integrated filter patch antenna has an E-plane and an H-plane at 2.71GHz as shown in (a) and (b) of fig. 5, an E-plane and an H-plane at 2.81GHz as shown in (a) and (b) of fig. 6, and an E-plane and an H-plane at 2.93GHz as shown in fig. 7. The broadside co-polarization of the E-plane and the H-plane is found to be at least 20dB higher than the corresponding cross-polarization. Since the cross-polarization values in the E-plane simulation results of the three resonance points are all less than-40 dB, the curves are not shown in the figures, and it can be seen from fig. 4, 5 and 6 that the filtered patch antenna has the edge-radiation characteristic.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (8)
1. The utility model provides a be applied to filtering patch antenna of HMSIW cavity that industrial field integrated which characterized in that: the antenna comprises a dielectric substrate, a metal grounding plate, an antenna filtering structure and an HMSIW single-cavity antenna; the metal grounding plate is arranged below the dielectric substrate;
the antenna filtering structure comprises a coupling parasitic patch resonator and a first HMSIW resonant cavity; the coupling parasitic patch resonator comprises an inverted E-shaped structure and a rectangular structure; the rectangular structure is arranged on the dielectric substrate, the inverted E-shaped structure is an inverted E-shaped groove etched in the metal grounding plate, the first HMSIW resonant cavity comprises 25 metal through holes, the metal through holes are uniformly arranged on the outer side of the rectangular structure, and the rectangular structure, the dielectric substrate and the metal grounding plate penetrate through;
the HMSIW single-cavity antenna is arranged on the dielectric substrate and comprises a rectangular radiation patch, a feeder line, two L-shaped slots and a second HMSIW resonant cavity; the two L-shaped gaps are symmetrically etched on the rectangular radiation patch, and the feeder line is connected to the rectangular radiation patch between the two L-shaped gaps; the second HMSIW resonant cavity comprises 62 metal through holes, is distributed on one side of the rectangular radiation patch with the feeder line and two side edges connected with the side, and penetrates through the rectangular radiation patch, the dielectric substrate and the metal grounding plate;
the rectangular structure of the coupling parasitic patch resonator is positioned on one side, opposite to the feeder line, of the rectangular radiating patch of the HMSIW single-cavity antenna, and the inverted E-shaped structure is etched on the metal grounding plate between the rectangular structure of the coupling parasitic patch resonator and the rectangular radiating patch of the HMSIW single-cavity antenna.
2. The filter patch antenna applied to the HMSIW cavity for industrial site integration according to claim 1, wherein: the HMSIW single-cavity antenna is arranged on a dielectric substrate, and a grounding plate is arranged below the dielectric substrate.
3. The filtering patch antenna applied to the HMSIW cavity for industrial field integration according to claim 2, wherein: the middle part of the reverse E-shaped structure is connected with the grounding plate and is combined with the open groove on the grounding plate to form a double-spiral gap coupling DGS structure, and the double-spiral gap coupling DGS structure is formed by connecting a T-shaped structure rectangular groove, two I-shaped structure rectangular grooves and the grounding plate.
4. The filtering patch antenna applied to the HMSIW cavity for industrial field integration according to claim 1, wherein: the sizes of the metal through holes in the first HMSIW resonant cavity and the metal through holes in the second HMSIW resonant cavity are both 1mm, and the center distances of the metal through holes are both 1.5mm.
5. The filter patch antenna applied to the HMSIW cavity for industrial site integration according to claim 1, wherein: the HMSIW single-cavity antenna adopts a CPW feeding mode, and the length of a feeder line is 24.3mm, and the width of the feeder line is 3mm.
6. The filter patch antenna applied to the HMSIW cavity for industrial site integration according to claim 1, wherein: the filtering patch antenna based on the HMSIW cavity works in a 2.84GHz frequency band, the 10db bandwidth is 260MHz, and the relative bandwidth is 9.2%.
7. The filtering patch antenna applied to the HMSIW cavity for industrial field integration according to claim 1, wherein: the rectangular radiation patch is 66.5mm long and 50mm wide; the length of the rectangular structure coupling parasitic patch is 38.5mm, and the width of the rectangular structure coupling parasitic patch is 17.3mm.
8. The filter patch antenna applied to the HMSIW cavity for industrial site integration according to claim 1, wherein: and 5.4mm intervals are arranged between the rectangular radiation patch and the rectangular structure coupling parasitic patch, and the width of the double-spiral gap coupling DGS structure gap is 0.4mm.
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| CN202211152023.5A CN115548659A (en) | 2022-09-21 | 2022-09-21 | Filtering patch antenna applied to industrial field integrated HMSIW cavity |
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| CN202211152023.5A CN115548659A (en) | 2022-09-21 | 2022-09-21 | Filtering patch antenna applied to industrial field integrated HMSIW cavity |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855466A (en) * | 2014-03-25 | 2014-06-11 | 电子科技大学 | Three-stopband ultra wideband antenna with narrow notch bandwidth |
| CN109546272A (en) * | 2018-11-01 | 2019-03-29 | 西安电子科技大学 | A kind of double frequency differential bandpass filter |
| CN110444840A (en) * | 2019-08-06 | 2019-11-12 | 西安电子科技大学 | Double frequency differential bandpass filter based on minor matters Load resonators |
| CN112563724A (en) * | 2020-12-04 | 2021-03-26 | 西安电子科技大学 | Low-profile half-mode substrate integrated waveguide filter antenna with high frequency selectivity |
| CN113937465A (en) * | 2021-10-25 | 2022-01-14 | 华南理工大学 | Dual-polarized electromagnetic transparent antenna and method for realizing dual-frequency scattering suppression |
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2022
- 2022-09-21 CN CN202211152023.5A patent/CN115548659A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855466A (en) * | 2014-03-25 | 2014-06-11 | 电子科技大学 | Three-stopband ultra wideband antenna with narrow notch bandwidth |
| CN109546272A (en) * | 2018-11-01 | 2019-03-29 | 西安电子科技大学 | A kind of double frequency differential bandpass filter |
| CN110444840A (en) * | 2019-08-06 | 2019-11-12 | 西安电子科技大学 | Double frequency differential bandpass filter based on minor matters Load resonators |
| CN112563724A (en) * | 2020-12-04 | 2021-03-26 | 西安电子科技大学 | Low-profile half-mode substrate integrated waveguide filter antenna with high frequency selectivity |
| CN113937465A (en) * | 2021-10-25 | 2022-01-14 | 华南理工大学 | Dual-polarized electromagnetic transparent antenna and method for realizing dual-frequency scattering suppression |
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