CN115547968A - 利用大角度导线键合和非金键合线进行半导体器件封装 - Google Patents

利用大角度导线键合和非金键合线进行半导体器件封装 Download PDF

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Publication number
CN115547968A
CN115547968A CN202210734699.9A CN202210734699A CN115547968A CN 115547968 A CN115547968 A CN 115547968A CN 202210734699 A CN202210734699 A CN 202210734699A CN 115547968 A CN115547968 A CN 115547968A
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Prior art keywords
bond
semiconductor die
wire
bonding
gold
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CN202210734699.9A
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English (en)
Inventor
B-H·潘
C-C·李
H-Y·周
S·M·奥康纳
B·L·威廉姆斯
J·A·韦斯特
Z-X·展
S-W·黄
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN115547968A publication Critical patent/CN115547968A/zh
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  • Wire Bonding (AREA)

Abstract

本申请公开了利用大角度导线键合和非金键合线进行半导体器件封装。在所描述的示例中，一种装置(图2，200)包括：封装衬底(220)，其具有管芯安装部分和与管芯安装部分间隔开的引线部分；在管芯安装部分之上的半导体管芯(105)，半导体管芯在背离封装衬底的有源表面上具有键合焊盘；非金键合线(110、109)，其形成在键合焊盘中的至少一个和封装衬底的引线部分中的一个之间的电连接；键合针脚，其位于在非金键合线(109)中的一个和半导体管芯的键合焊盘(223)之间形成的凸块连接上，包括形成在弯曲螺柱凸块(211)上的针脚键合(205)；以及电介质材料(203)，其覆盖封装衬底的一部分、半导体管芯、非金键合线、针脚键合以及弯曲螺柱凸块，从而形成封装的半导体器件。

Description

利用大角度导线键合和非金键合线进行半导体器件封装
技术领域
本申请总体涉及半导体器件的封装，并且更具体地涉及利用导线键合连接对半导体器件进行封装。
背景技术
用于半导体器件的封装包括器件之间和/或器件与封装衬底(例如导电引线框架)之间的电连接。在电压可能超过1kV的高压应用中，封装衬底可能包括能够承载高压的一些部分，以及包括处于低电压且不能承载高压的器件的一些部分，后者必须与高电压隔离。在一些半导体器件封装中，多个半导体管芯安装到隔离的引线框架部分，并且从管芯到引线框架上的引线进行连接，并且在管芯之间进行一些连接。在某些封装中，键合线与键合焊盘或引线的连接之间需要大角度。接近键合焊盘的键合线的大角度通过增加这些元件之间的距离来防止承载高电压的键合线与芯片焊盘、封装衬底引线框架的处于另一个电势的管芯边缘或引线之间的电弧。大角度也避免了由于导电下垂而导致的短路。
金键合线用于在半导体器件封装中形成键合线连接。金的延展性很强，并且金键合线可以以许多键合线角度形成可靠的键合。然而，金键合线越来越昂贵。成本较低的替代品包括镀铜键合线，例如镀钯铜(PCC)键合线、裸铜键合线、银键合线和铝键合线。PCC的另一种稍贵的替代品是镀金铜线。经常使用PCC键合线。PCC键合线不能进行大角度针脚键合。对于需要大角度针脚键合的导线键合封装，例如对于封装器件中的管芯到管芯导线键合连接，所使用的键合线的至少一部分通常是金，因为铜键合线不能进行所有所需的键合。一起使用PCC键合线(或另一种成本较低的键合线)和金键合线可以比使用纯金键合线在一定程度上降低成本，但是需要在封装中使用两种不同的键合线类型要求进行两次键合操作，其中导线键合机设置为使用两种不同类型的导线。需要使用成本较低的键合线进行封装。
发明内容
在所描述的示例中，一种装置包括：封装衬底，其具有管芯安装部分和与管芯安装部分间隔开的引线部分；在封装衬底的管芯安装部分之上的半导体管芯，半导体管芯在背离封装衬底的有源表面上具有键合焊盘；非金键合线，其形成在键合焊盘中的至少一个和封装衬底的引线部分中的一个之间的电连接；键合针脚，其位于在非金键合线中的一个和半导体管芯的键合焊盘之间形成的凸块连接上，包括形成在弯曲螺柱凸块上的针脚键合，该针脚键合偏离弯曲螺柱凸块的中心，弯曲螺柱凸块在形状上是不对称的并且在键合焊盘的平面表面上方的第一竖直高度处具有顶峰，该顶峰偏离弯曲螺柱凸块的中心，弯曲螺柱凸块的另一部分从顶峰跨越弯曲螺柱凸块的中心，该另一部分在键合焊盘的平面表面上方具有第二高度，第二高度小于第一高度；以及电介质材料，其覆盖封装衬底的一部分、半导体管芯、非金键合线、凸块键合上的键合针脚以及弯曲螺柱凸块，从而形成封装的半导体器件。
附图说明
图1是具有安装在封装衬底上的多个半导体管芯并利用导线键合连接的过程中封装器件的投影图。
图2是具有多个半导体管芯的封装器件的布置的横截面图，多个半导体管芯利用从管芯到管芯和从管芯到引线的导线键合连接来安装在封装衬底上。
图3以横截面视图图示了半导体管芯的键合焊盘上的毛细管和弯曲螺柱凸块。
图4以另一个横截面视图图示了图3的弯曲螺柱凸块，其中在弯曲螺柱凸块上形成了大角度针脚键合。
图5以流程图图示了用于形成布置的一系列方法步骤。
图6以另一个流程图图示了用于形成布置的一系列方法步骤。
具体实施方式
除非另有说明，不同图中对应的数字和符号通常指对应的部分。这些图不一定按比例绘制。
本文使用术语“半导体器件”。如本文所用，半导体器件是使用半导体材料制造的器件。半导体器件可以是分立部件，例如电阻器、电感器、电容器、线圈、二极管或其他无源元件。半导体器件可以是一个或多个晶体管。半导体器件可以包括若干甚至数千个晶体管并且可以被称为“集成电路”。半导体器件可以是电路。示例包括模拟和数字电路，例如滤波器、模数转换器、数模转换器、传感器、功率晶体管、电源、电荷泵、开关、光电池、换能器、二极管、体声波器件、天线、接收器、发射器、收发器、处理器、数字信号处理器、放大器、移位器、计数器、时钟电路、锁相环、微控制器、总线驱动器和片上系统、存储器器件、寄存器、易失性和非易失性存储电路以及其他集成电路。本文使用术语“半导体管芯”。如本文所用，半导体管芯是单个半导体器件。本文使用术语“封装的半导体器件”。如本文所用，封装的半导体器件是保护性封装中的半导体管芯，例如塑料、树脂或模制封装。
本文使用的术语“有源表面”是指半导体器件管芯的表面。半导体器件管芯的有源表面是使用半导体制造工艺(例如离子注入、氧化、退火、化学和气相沉积、蚀刻、光刻、镀覆和用于形成半导体器件的其他工艺)在其上形成部件的表面。本文描述了“键合焊盘”。半导体器件的键合焊盘是形成在有源表面上的导电焊盘，其为半导体器件中的部件提供电连接。
本文使用术语“封装衬底”。封装衬底是支撑器件封装内的半导体器件管芯的衬底。封装衬底的示例包括引线框架、预模制引线框架(PMLF)、模制互连衬底(MIS)、电路板、层压板、薄膜和带状衬底以及半导体衬底。
在本说明书中，当术语“耦合”描述元件之间的关系时，“耦合”不限于“连接”或“直接连接”，还可以包括与中间元件和附加元件的连接以及可能存在于任何“耦合”的元件之间的各种连接。
在本说明书中，使用了术语“高电压”。在一些半导体器件中，晶体管或其他器件耦合到与通常用于半导体器件的电压相比被认为“高”的电压。如本文所用，“高电压”是大于约100伏的电压，并且在一些应用中可以高达数百甚至数千伏。在示例应用中，半导体管芯在1.5kV下工作，并且在发生开关操作时能够承受12kV浪涌电压和8kV瞬态峰值过电压。如本文所用，“低电压”小于或等于100伏。集成电路中使用的许多逻辑器件在诸如1.2、2、3.3、5、6、12和20伏特的电压下工作。汽车器件可以在12伏或更低的电压下运行，因为这是由电池提供的电压。在一些示例布置中，器件封装中的一些半导体管芯被配置为在高电压下操作，而一些其他半导体器件被配置为在低电压下操作，所有器件都放置在同一封装中。在这些示例布置中，键合线在两种类型的器件之间耦合一些信号，但重要的是，必须放置承载高电压的键合线以避免在另一个电势的表面上产生电弧，这需要键合线的大角度。低电压器件与封装内的高电压隔离。
术语“大角度”在本文中在描述键合线连接时被使用。如本文所用，术语“大角度”是指从键合焊盘或引线延伸的键合线与平行于键合焊盘或引线的表面的水平面之间所成的角度大于或等于30度。在一些布置中，大角度可以在30度和40度之间的范围内。值得注意的是，大角度受制于制造公差，这可能会产生一些预期的差异。如本文所用，30度的大角度包括+/-10％的制造公差，因此当一个角度旨在形成30度的大角度时，测量的27度的键合线角度将包括在术语“大角度”中，测量的33度的角度或这些角度之间的任何角度也将包括在术语“大角度”中。当意欲形成的键合线角度大于或等于30度时，对于键合线来说这是大角度。
在本说明书中，导线键合被描述为“球键合”或“针脚键合”。当键合线用于在半导体封装中形成连接时，导线键合机使用毛细管工具。键合线延伸穿过毛细管中的孔。毛细管具有若干功能。一种是将键合线从一个点移动到另一个点，使其在延伸穿过毛细管开口时形成环路或电弧。毛细管还具有与导电键合焊盘进行键合连接的能力。导线延伸穿过毛细管，该毛细管用于向导线施加压力、振动、升高的温度和/或超声波能量以在键合焊盘上形成键合。在进行键合后，毛细管可以切割或断开键合线。此外，在进行键合并切割键合线之后，可以通过使用热能或火焰能在键合线的端部形成球。然后将位于键合线端部的球放置并键合到键合焊盘，并且随着毛细管移动到第二键合焊盘或导电引线，键合线从球延伸。然后通过施加压力和能量并在将导线键合到第二键合焊盘上时断开导线来使用键合线进行针脚键合。毛细管可以具有夹住键合线的夹具，并且毛细管可以断开键合线。以这种方式，导线连接在键合焊盘端部具有球的球键合和在键合焊盘处不具有球的针脚键合之间延伸。“球和针脚”键合操作在器件上快速重复以进行连接。可以从管芯上的键合焊盘到封装衬底上的导电表面进行连接，例如引线框架的引线或层压板或模制互连衬底上的导电接地焊盘。也可以从管芯到管芯进行连接，例如从隔离器件封装中的高压半导体管芯到低压半导体管芯。在一些导线键合机中，可以进行“反向”键合，其中在封装衬底导电接地焊盘或表面上进行球键合，并且在半导体管芯键合焊盘上进行针脚键合。当使用导线键合在半导体管芯之间建立连接时，其中一个连接可以是针脚键合。
在本说明书中，描述了“螺柱凸块”。导线键合机可用于制作螺柱凸块。在这些布置中，螺柱凸块通过制作“凸块上的键合针脚”或“BSOB”键合来改进针脚键合。螺柱凸块使用球键合操作形成。通过熔化键合线并允许形成自由空气球，在从毛细管延伸的键合线的端部形成球，然后使用压缩、热压和/或超声波能量将球键合到键合焊盘。当毛细管从球的顶部抬起时，毛细管移动，使得延伸的键合线折叠到球上，然后切割，从而留下在中心部分具有峰值的金字塔形或锥形螺柱凸块。导线键合机随后可以在螺柱凸块上进行针脚键合，螺柱凸块竖直地升高平面以进行针脚键合。螺柱凸块本质上类似于球键合，非常可靠，并且使用带有针脚键合的螺柱凸块可以使导线键合操作比单独的针脚键合更可靠。在这些布置中，凸块操作上的键合针脚用于将接键合线连接到半导体管芯上的键合焊盘，键合焊盘可用于进行管芯到管芯的键合线连接。
在本说明书中，使用了术语“弯曲(flex)螺柱凸块”。如本文所用，弯曲螺柱凸块是形成有当从上方观察时从螺柱凸块的中心偏移的顶峰部分的螺柱凸块。在这些布置中，弯曲螺柱凸块用于使用铜或其他类型的非金键合线进行大角度针脚键合。弯曲螺柱凸块的顶峰形成在偏离弯曲螺柱凸块中心的一侧。弯曲螺柱凸块的另一部分具有比顶峰低的高度并且与顶峰相对，从上方观察时也偏离中心。弯曲螺柱凸块的倾斜表面从下部向上延伸至顶峰。
在本说明书中，使用了术语“非金键合线”。如本文所用，非金键合线为不是金键合线的任何键合线。可用于布置中的示例包括镀钯铜(PCC)键合线、裸铜键合线、镀金铜键合线、银键合线和铝键合线。所有这些非金键合线的成本都低于纯金键合线。
在这些布置中，用于多个半导体管芯的封装包括用诸如PCC键合线的非金键合线进行的大角度导线键合连接。替代布置可以使用裸铜键合线、镀金铜键合线、银键合线或铝键合线。在一些封装器件中，在键合线和半导体管芯键合焊盘之间需要大角度导线键合连接。键合线的大角度防止或降低键合线和其他导电表面之间产生电弧的可能性。在这些布置中，使用导线键合机工具在键合焊盘上制造弯曲螺柱凸块。然后在键合焊盘上的弯曲螺柱凸块上形成针脚键合。当进行针脚键合时，导线键合机工具的承载导线的毛细管有意地从弯曲螺柱凸块的中心朝向管芯内部偏移预定距离，并进行针脚键合。键合线远离针脚键合并沿着弯曲螺柱凸块的倾斜表面延伸。得到的针脚键合在平行于半导体管芯上的键合焊盘的平坦表面的水平面和从针脚键合延伸的导线之间具有大于30度的键合线角度，并且在各种布置中，该角度在30度和40度之间。大角度增加了从针脚键合延伸的键合线与管芯焊盘表面和管芯边缘之间的距离，从而降低了电弧的可能性。在弯曲螺柱凸块上使用偏移针脚键合使得大角度键合能够用成本较低的键合线制成，例如PCC键合线、裸铜键合线和镀金铜键合线；此外，可以使用替代的非金键合线，例如银和铝。
在示例布置中，使用镀钯铜(PCC)键合线。在替代布置中，可以使用裸铜键合线、镀金铜键合线、银键合线或铝键合线。通过结合成本较低的非金键合线并使用在弯曲螺柱凸块上形成的大角度针脚键合，可以在不需要金键合线的情况下制造用于高低压半导体管芯的半导体封装，与纯金线方法相比降低了成本，与混合双线方法相比提高了制造效率，从而降低了单位成本。无需改变现有封装设计或在半导体管芯上放置键合焊盘即可使用该布置，从而使该布置易于实施且成本低。
在对封装材料和相关成本的分析中，确定金键合线在完整封装器件的成本中占很大比例，约为纯金线封装总成本的5％。分析表明，在示例封装器件中使用PCC键合线代替金线可以将键合线成本降低90％，并且可以将整体封装成本降低14％-18％的总封装成本(在与采用纯金键合线封装中的相同器件相比时)。
图1以投影图图示了加工中的工件，其中封装衬底(该示例中的引线框架)具有三个部分111、113和115。半导体管芯101、103和105安装在三个引线框架部分111、113、115的管芯焊盘上。半导体管芯可以被配置为在不同的电压下工作，例如管芯105可以被配置为耦合到高电压，例如大于100伏的电压，并且在一些示例高达1kVrms或更高，而其余管芯可配置为耦合到较低电压，例如低于1kV、低于100伏或更低电压。键合线109被示为将管芯彼此耦合，并且附加键合线110将管芯耦合到各个引线框架部分上的引线。封装衬底部分111、113、115间隔开，使得半导体管芯彼此电隔离，而键合线109允许信号耦合在电隔离管芯之间。如图1所示，一些键合线109将半导体管芯上的一个键合焊盘连接到另一半导体管芯上的另一键合焊盘以形成管芯到管芯连接。在使用球和针脚键合操作进行的管芯到管芯连接中，键合线连接的一端部是球键合，而键合线连接的另一端部的连接是针脚键合，例如凸块上的键合针脚。
图2是封装器件200的布置的截面图。在图2中，使用封装工艺在半导体管芯103、105、键合线109、110和封装衬底220的覆盖部分周围形成电介质材料203，例如模塑料。半导体管芯103、105安装在封装衬底220的电隔离部分113、115上的管芯焊盘上，在该示例中，导电引线框架用作封装衬底。示例引线框架材料包括铜、铜合金、合金42、不锈钢和钢。各种材料可以镀覆在引线框架上，包括钯、镍、金、银、锡和铂。这些镀覆材料可用于防止氧化或腐蚀，减少离子扩散，并提高可焊性。可以使用多层镀层，例如化学镀镍浸金(ENIG)和化学镀镍、化学钯、浸金(ENEPIG)。点镀可用于引线框架上的特定位置。可以使用压印、蚀刻和部分蚀刻的引线框架。管芯附接材料213、215用于将半导体管芯103、105安装到引线框架部分的管芯焊盘。键合线110将半导体管芯键合焊盘223上的球键合耦合到对应的引线框架引线上的针脚键合209。键合焊盘223位于半导体管芯103、105的上层级(如在图2中器件的方位)并且通过钝化层中的键合焊盘开口从钝化层225暴露，钝化层225可以是氧化物、氮化物或其他电介质。弯曲螺柱凸块211显示在具有针脚键合205的键合焊盘223上。弯曲凸块211上的键合针脚实现了键合线109的大角度，键合线从半导体管芯105上的第一键合焊盘延伸到半导体管芯103上的第二键合焊盘。半导体管芯103、105彼此电隔离。半导体管芯103、105可以处于不同的电压电平，一个管芯可以被配置用于高压操作，而另一个管芯可以被配置为在低电压下操作。
图3以横截面视图图示了导线键合工具的导线键合毛细管301，以及使用毛细管301形成的弯曲螺柱凸块211。为了形成弯曲螺柱凸块211，毛细管301可以在三个维度上移动。毛细管301可以上下、左右和前后移动。在示例过程中，在延伸穿过毛细管301的键合线的端部形成自由空气球。毛细管301将自由空气球放在键合焊盘223上，使用压力、升高的温度和/或声能将球压到键合焊盘上以将其键合到键合焊盘上。然后可以将毛细管301从键合焊盘上的球向上抬起，并且随着键合线延伸穿过毛细管，键合线被折回到球上以形成弯曲螺柱凸块。毛细管向上移动并远离键合焊盘223以形成具有不对称金字塔形状的弯曲螺柱凸块211。弯曲螺柱凸块211的顶峰具有高度“H2”。顶峰偏离键合焊盘223的中心，并且在键合焊盘的最靠近管芯边缘的一侧，朝向键合线将需要远离弯曲螺柱凸块211延伸的方向。弯曲螺柱凸块211在弯曲螺柱凸块中心的相对侧具有较小的高度“H1”，使得弯曲螺柱凸块211具有成角度的倾斜表面，该倾斜表面从较小的高度H1延伸到较大的高度H2。弯曲凸块211具有支持使用凸块连接上的键合针脚形成大角度键合线连接的形状。
图3还图示了键合焊盘开口直径DBPO。在使用包括铜或其他非金键合线和弯曲螺柱凸块的布置的大角度键合线连接时，键合焊盘开口直径可以增加(当与用于类似直径的金键合线的键合焊盘开口相比时)。增加的键合焊盘开口用于防止毛细管301在形成弯曲螺柱凸块和针脚键合(如下所述)时损坏钝化层225。布置中使用的铜键合线或PCC键合线的延展性低于相同尺寸的金键合线。在示例中，将直径约1密耳(mil)的金键合线与PCC键合线进行比较。在示例布置中，使用直径为1mil的金线形成的封装是使用具有0.8mil直径的PCC键合线的布置的弯曲螺柱凸块制成的。示例布置中的键合焊盘开口直径为75微米。PCC键合线的延展性不如金，因此使用较小直径的导来获得类似的柔韧性。较小的键合线直径可以在一定程度上减少键合焊盘面积，这在某些封装设计中是有益的。在一些布置中，最初使用金线封装的半导体管芯也可以在具有PCC键合线的封装中使用，而无需改变键合焊盘设计或键合焊盘放置，从而降低在现有封装中使用该布置的成本。封装衬底，例如铜引线框架，也可以不加修改地与这些布置一起使用，即使当封装衬底先前与金线或两线型封装一起使用时，也可以降低使用这些布置的成本。虽然示例布置使用直径为0.8mil的PCC键合线，但其他布置可以使用不同尺寸的键合线，例如0.6mil。键合线的电阻率会随着直径、线材和涂层类型的不同而有所不同，并且可以进行一些仿真来验证这些布置是否具有足够的载流能力。当与使用金键合线形成的相同封装相比时，对某些信号或电源端子使用平行键合线可以补偿由于导线尺寸减小或导线类型变化而导致的任何电阻率增加。
图4以另一个横截面视图图示了在附加工艺步骤之后的弯曲螺柱凸块211。在形成弯曲螺柱凸块211之后，然后使用毛细管301在另一个半导体管芯(未示出，但参见图2，半导体管芯103)上形成球键合。键合线109从球键合延伸并且用于在弯曲螺柱凸块211上形成针脚键合231。针脚键合231形成为从弯曲螺柱凸块211的中心偏移偏移距离DOS。偏移距离DOS大于导线直径和球直径，例如，为键合线直径的大约175％。在一个示例中，偏移距离为1.2至1.4密耳，导线直径为0.8密耳(使用PCC键合线)。针脚键合231形成在弯曲螺柱凸块的较低高度部分上，键合线沿着弯曲螺柱凸块211的倾斜表面部分放置，并且键合线以大角度继续远离弯曲螺柱凸块。偏移距离DOS被布置为使导线形成大角度键合，其中键合线109位于弯曲螺柱凸块211的倾斜表面上并抬起到弯曲螺柱凸块的顶峰。该导线从弯曲螺柱凸块211上的顶峰朝向键合线209的相对端部处的第二半导体管芯(未示出)上的球键合延伸(参见图2)。在平行于键合焊盘的上表面的水平面和键合线109之间测量的角度θ在30和40度之间，是一个大角度。使用这种大角度键合线连接使得键合线109能够将高压传送到半导体管芯105或半导体管芯105下方的封装衬底115的管芯焊盘而不产生电弧。
图5以流程图图示了用于形成布置的方法的步骤。在图5中，在步骤501处，该方法开始于将半导体管芯安装到封装衬底上。
在步骤503处，该方法继续。对于将接收半导体管芯上的针脚键合的键合焊盘，该方法首先在键合焊盘上形成弯曲螺柱凸块(参见图3中的弯曲螺柱凸块211)。在步骤505处，在半导体管芯键合焊盘上形成球键合，该键合焊盘将通过导线键合连接到弯曲螺柱凸块(参见图2，管芯103和键合线109)。
在步骤507处，导线键合机工具的毛细管将导线从球键合延伸到弯曲螺柱凸块，从而在弯曲螺柱凸块处形成制成具有大角度的环路。在步骤509处，毛细管形成针脚键合。针脚在弯曲螺柱凸块上形成并偏移，使得针脚键合位于弯曲螺柱凸块的较低高度部分，偏离弯曲螺柱凸块的中心，并且键合线沿着弯曲螺柱凸块的倾斜表面放置，并延伸到位于弯曲螺柱凸块的相对侧并偏移的顶峰。使用弯曲螺柱凸块抬起了键合线的竖直高度，因为它从针脚键合延伸，并且能够使用非金键合线实现大角度导线键合，在示例中使用PCC键合线。(参见图4，导线109和弯曲螺柱凸块211，其中角度为θ)。
在完成导线键合并制成管芯到管芯和管芯到引线键合之后，执行清洁步骤，这在图6中详述。然后用模塑料覆盖半导体管芯、键合线和一部分封装衬底，该模塑料可以是环氧树脂，也可以是从固体圆盘(puck)或粉末加热并流入模具，然后固化的热固性模塑料。可以使用其他树脂、环氧树脂或塑料。
布置的使用提供了使用非金键合线(例如PCC键合线或裸铜键合线)进行大角度针脚键合的能力。替代的非金键合线包括镀金铜键合线、银键合线和铝键合线。在示例布置中，大角度导线键合连接用在器件封装中，该器件封装具有高电压和低电压能力半导体管芯之间的管芯到管芯键合线连接。然而，在替代布置中，单个半导体管芯可以与使用凸块上的键合针脚的非金键合线的大角度键合线连接一起使用。多个半导体管芯可以安装在单个封装中，并为某些键合焊盘提供大角度导线键合连接。可以使用非金键合线通过大角度键合线连接来进行管芯到管芯连接，在示例中使用PCC键合线。
图6图示了布置的另一方面。在键合操作之后，在模制之前对非金键合线和半导体管芯执行等离子体清洁。对于金键合线，等离子灰化工艺可以使用氩气(Ar)作为气体。然而，据观察，对于PCC铜键合线，Ar分子会使钯涂层产生凹坑，从而导致腐蚀。在这些布置中，氧等离子体用于清洁器件。氧气不会损坏PCC键合线。在图6中，该方法开始于步骤601，将半导体管芯安装在封装衬底上。在步骤603处，使用PCC键合线执行导线键合，包括凸块键合上的大角度针脚，例如用于管芯到管芯键合。然后将完成的键合器件使用氧气进行等离子体处理，持续预定时间，例如40小时。可以使用更多或更少的时间。当时间过去时，在步骤609执行模制操作。
可以改变图5和图6中所示的步骤的顺序，并且可以添加额外的步骤，同时仍然保持在所附权利要求的范围内。例如，在图5中，可以在没有弯曲螺柱凸块的情况下形成额外的键合，或者如图2所示从球键合到引线。
使用该布置的大角度导线键合允许使用非金键合线，例如铜键合线，并且在示例PCC键合线中，用于封装器件中的所有导线键合连接。使用成本较低的非金键合线代替金键合线，大大降低了封装成本。使用这些布置不需要重新设计半导体管芯或封装，从而降低了实施这些布置的成本。通过将弯曲螺柱凸块与非金键合线结合，可以用非金键合线形成大角度导线键合。可以通过优化钝化层中的键合焊盘开口尺寸来获得额外的改进，以补偿使用该布置的弯曲螺柱凸块区域的任何扩展。在示例布置中，使用了0.8mil PCC键合线，但也可以使用其他导线尺寸。可以使用裸铜键合线、镀金铜键合线、银键合线和铝键合线。
在权利要求的范围内对所描述的布置进行修改是可能的，并且其他替代布置也是可能的。

Claims (20)

1.一种装置，包括：
封装衬底，其具有管芯安装部分和与所述管芯安装部分间隔开的引线部分；
半导体管芯，其在所述封装衬底的所述管芯安装部分之上，所述半导体管芯在背离所述封装衬底的有源表面上具有键合焊盘；
非金键合线，其在所述键合焊盘中的至少一个和所述封装衬底的所述引线部分中的一个之间形成电连接；
键合针脚，其位于在所述非金键合线中的一个和所述半导体管芯的键合焊盘之间形成的凸块连接上，包括形成在弯曲螺柱凸块上的针脚键合，所述针脚键合偏离所述弯曲螺柱凸块的中心，所述弯曲螺柱凸块在形状上是不对称的并且在所述键合焊盘的平面表面上方的第一竖直高度处具有顶峰，所述顶峰偏离所述弯曲螺柱凸块的所述中心，所述弯曲螺柱凸块的另一部分从所述顶峰跨越所述弯曲螺柱凸块的所述中心，所述另一部分在所述键合焊盘的所述平面表面上方具有第二高度，所述第二高度小于所述第一高度；以及
电介质材料，其覆盖所述封装衬底的一部分、所述半导体管芯、所述非金键合线、所述针脚键合以及所述弯曲螺柱凸块，从而形成封装的半导体器件。
2.根据权利要求1所述的装置，其中通过所述针脚键合键合到所述弯曲螺柱凸块的所述非金键合线以一定角度从所述针脚键合延伸到平行于所述半导体管芯的所述有源表面的水平面，其中所述角度在介于大于或等于30度且小于或等于40度的范围内。
3.根据权利要求2所述的装置，其中所述角度是30度+/-10％。
4.根据权利要求2所述的装置，其中所述角度是40度+/-10％。
5.根据权利要求1所述的装置，其中所述非金键合线是选自镀钯铜键合线、镀金铜键合线、裸铜键合线、银键合线和铝键合线中的一种。
6.根据权利要求1所述的装置，其中所述非金键合线是镀钯铜键合线。
7.根据权利要求1所述的装置，其中所述弯曲螺柱凸块在第一半导体管芯的第一键合焊盘上，并且所述装置还包括在所述封装衬底的另一部分上的第二半导体管芯，所述非金键合线从所述弯曲螺柱凸块上的凸块上的所述键合针脚延伸到所述第二半导体管芯上的第二键合焊盘。
8.根据权利要求7所述的装置，其中所述非金键合线通过球键合键合到所述第二键合焊盘。
9.一种装置，包括：
在封装衬底的第一部分上的第一半导体管芯；
在所述封装衬底的第二部分上的第二半导体管芯，所述第二部分与所述第一部分间隔开并电绝缘，并且所述第一半导体管芯与所述第二半导体管芯电绝缘；
在背离所述封装衬底的所述第一半导体管芯的第一有源表面上的第一键合焊盘；
在背离所述封装衬底的所述第二半导体管芯的第二有源表面上的第二键合焊盘；以及
非金键合线，其通过球键合键合到所述第二键合焊盘，并延伸到所述第一键合焊盘，所述非金键合线通过弯曲螺柱凸块上的凸点连接上的键合针脚键合到所述第一键合焊盘上的所述弯曲螺柱凸块，所述非金键合线从所述弯曲螺柱凸块上的针脚键合以一定角度延伸到平行于所述第一半导体管芯的所述第一有源表面的水平面，所述角度大于或等于30度且小于或等于40度。
10.根据权利要求9所述的装置，其中所述角度是30度+/-10％。
11.根据权利要求9所述的装置，其中所述角度是40度+/-10％。
12.根据权利要求9所述的装置，其中所述第一半导体管芯被配置为在大于100伏的电压下运行，并且所述第二半导体管芯被配置为在低于100伏的电压下运行。
13.根据权利要求9所述的装置，其中所述非金键合线是选自镀钯铜键合线、镀金铜键合线、裸铜键合线、银键合线和铝键合线中的一种。
14.根据权利要求9所述的装置，其中所述非金键合线具有小于1密耳的直径。
15.根据权利要求9所述的装置，其中所述非金键合线是具有0.8密耳+/-10％的直径的镀钯铜键合线。
16.一种方法，包括：
将半导体管芯安装在封装衬底上，所述半导体管芯在背离所述封装衬底的所述半导体管芯的有源表面上具有键合焊盘；
在所述半导体管芯的第一键合焊盘上形成弯曲螺柱凸块，所述弯曲螺柱凸块具有不对称的形状，所述不对称的形状具有在所述第一键合焊盘上方具有第一高度的顶峰，当从上方观察时，所述顶峰偏离所述弯曲螺柱凸块的中心并且在所述弯曲螺柱凸块的一侧，并且所述弯曲螺柱凸块具有所述弯曲螺柱凸块的与所述顶峰相对的第二侧上的一部分，所述一部分在所述第一键合焊盘的所述表面上方具有第二高度，所述第二高度小于所述第一高度；
在非金键合线的端部形成键合线球；
将所述键合线球键合到第二键合焊盘；
从所述第二键合焊盘上的键合处延伸所述非金键合线；以及
在所述非金键合线和所述弯曲螺柱凸块之间的凸块连接上形成键合针脚，在凸块连接上的所述键合针脚具有偏离所述弯曲螺柱凸块的所述中心的针脚键合，所述针脚键合形成在所述弯曲螺柱凸块的所述第二高度处的所述部分上；
其中所述非金键合线从所述弯曲螺柱凸块以一定角度延伸到与所述键合焊盘的平面表面平行的水平面，所述角度在介于大于或等于30度到小于或等于40度的范围内。
17.根据权利要求16所述的方法，其中所述非金键合线是镀钯铜键合线。
18.根据权利要求16所述的方法，其中形成所述弯曲螺柱凸块还包括：
在从导线键合工具的毛细管延伸的非金键合线的所述端部处形成自由空气球；
通过使用所述毛细管将所述自由空气球压到所述键合焊盘上，将球键合键键合到所述键合焊盘上；以及
当所述毛细管被抬起离开所述键合焊盘时移动所述毛细管以将所述非金键合线折叠到所述球的表面上以形成所述弯曲螺柱凸块，所述弯曲螺柱凸块的顶峰偏离所述弯曲螺柱凸块的所述中心。
19.根据权利要求16所述的方法，其中所述半导体管芯是第一半导体管芯，并且还包括第二半导体管芯，并且所述非金键合线延伸到所述第二半导体管芯上的键合焊盘，并且所述球键合在所述第二半导体管芯上的键合焊盘上。
20.一种装置，包括：
第一半导体管芯，其安装到封装衬底的第一部分；
第二半导体管芯，其安装到所述封装衬底的第二部分，所述第一部分和所述第二部分彼此间隔开，并且所述第一半导体管芯和所述第二半导体管芯彼此电绝缘；
在所述第一半导体管芯上的第一键合焊盘；
在所述第二半导体管芯上的第二键合焊盘；以及
镀钯铜键合线，其从所述第一半导体管芯上的所述第一键合焊盘上的球键合连接延伸到所述第二半导体管芯上的所述第二键合焊盘上的弯曲螺柱凸块上的凸块连接上的键合针脚，其中所述镀钯铜键合线从所述第二键合焊盘上的所述弯曲螺柱凸块上的针脚键合以一定角度延伸到平行于所述第二键合焊盘的平面表面的水平面，所述角度在介于大于或等于30度且小于或等于40度的范围内。
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