CN115537728B - High-density composite atomic oxygen protective film - Google Patents
High-density composite atomic oxygen protective film Download PDFInfo
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- CN115537728B CN115537728B CN202211234011.7A CN202211234011A CN115537728B CN 115537728 B CN115537728 B CN 115537728B CN 202211234011 A CN202211234011 A CN 202211234011A CN 115537728 B CN115537728 B CN 115537728B
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- atomic oxygen
- sio
- film
- siloxane
- layer
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000001681 protective effect Effects 0.000 title claims abstract description 14
- 239000002131 composite material Substances 0.000 title claims abstract description 12
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 4
- 229920006268 silicone film Polymers 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 16
- 238000000576 coating method Methods 0.000 abstract description 15
- 239000011248 coating agent Substances 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000011253 protective coating Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004447 silicone coating Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Laminated Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a high-density composite atomic oxygen protective film. Firstly, designing a layer of compact SiO x film without microscopic defects with the thickness of 1-100 nm on the surface of an organic substrate, and taking the film as a seed layer for growing a siloxane coating; a siloxane coating with a thickness of 200-600 nm was then designed on the SiO x seed layer. Finally, a SiO x film with the thickness of 5-200 nm is designed on the surface of the siloxane and is used as a cap layer. The invention has the advantages that: the SiO x seed layer can effectively reduce microscopic defects in the siloxane coating and prevent the formation of atomic oxygen degradation channels. The SiO x cap layer can effectively cover defects such as holes, cracks and the like on the surface of the siloxane, and simultaneously enhances the atomic oxygen protection performance. The atomic oxygen protection method is provided for long-term in-orbit operation of the low-orbit and ultra-low-orbit satellites, and long service life, in-orbit performance of the low-orbit satellites and service life are guaranteed.
Description
Technical Field
The invention relates to the technical field of atomic oxygen degradation prevention, in particular to a high-density composite atomic oxygen protective film.
Background
During operation of a spacecraft in a low earth orbit environment, surface functional materials or devices (such as solar cell arrays, optical materials, thermal control coatings and the like) of the spacecraft are subjected to atomic oxygen oxidation erosion, so that the functions of the spacecraft are disabled. Thus, there is an urgent need for high performance atomic oxygen barrier coatings.
At present, only a layer of sufficiently dense protective coating is deposited on the surface of the material, so that the degradation effect of atomic oxygen on the substrate material can be prevented, for example, organic-inorganic hybrid siloxane coating and the like have good low-rail atomic oxygen protective capability, and the substrate can be effectively protected from being corroded by the atomic oxygen. However, the existence of microscopic defects such as holes in the silicone coating, which cause severe erosion of the substrate material by atomic oxygen, is the root cause of the overall quality loss. In addition, organic components exist in the siloxane coating, and under the irradiation of atomic oxygen for a long time, the organic components can be oxidized by the atomic oxygen to form volatile substances, so that holes are formed in the siloxane coating gradually, and the atomic oxygen prevention performance is invalid.
Therefore, in order to improve the performance of the siloxane atomic oxygen protective coating, the microscopic defects of the atomic oxygen protective film must be reduced, and it is important to develop a highly compact composite atomic oxygen protective film.
Disclosure of Invention
In view of the above, the present invention provides a highly dense composite atomic oxygen protective film, which is a composite film comprising a seed layer/a silicone intermediate layer/a cap layer on the surface of an organic substrate. The design of a compact SiO x seed layer without microscopic defects can effectively reduce the microscopic defects in the siloxane coating and prevent the formation of atomic oxygen degradation channels. The SiO x cap layer can effectively cover defects such as holes, cracks and the like on the surface of the siloxane, and simultaneously enhance the atomic oxygen protective performance, so that the comprehensive performance of the protective coating is obviously improved.
In order to achieve the above purpose, the technical scheme of the invention is as follows: a high-density composite atomic oxygen protecting film is prepared from seed layer, intermediate layer of siloxane film and cap layer sequentially from bottom to top on organic material substrate.
The seed layer is made of SiO x, and the value of x is a real number in the range of [1,2 ];
the cap layer is made of SiO x, and x is a real number in the range of [1,2 ].
Further, the seed layer thickness is between 1 and 100 nm.
Further, the thickness of the intermediate layer of the siloxane film is between 200 and 600nm, and the intermediate layer has flexibility and anti-atomic oxygen capability.
Further, the cap layer has a thickness between 5nm and 200 nm.
The beneficial effects are that:
The high-density composite atomic oxygen protective film provided by the invention has the advantages that the siloxane coating in the designed composite coating has certain flexibility and has strong adhesive force with the substrate material; the designed SiO x seed layer has compact micro-defect-free and flat characteristics, and can effectively reduce micro defects in the siloxane coating and prevent the formation of atomic oxygen degradation channels. The designed SiO x cap layer also has compact and smooth characteristics without microscopic defects, can effectively cover the defects of holes, cracks and the like on the surface of siloxane, and simultaneously enhances the atomic oxygen protection performance, so that the comprehensive performance of the protective coating is obviously improved. Meets the requirement of long-term on-orbit operation of low-orbit and ultra-low-orbit satellites on atomic oxygen protection.
Drawings
Fig. 1 is a schematic diagram of the technical solution of the present invention. 1-substrate material, 2-designed SiO x seed layer, 3-designed silicone intermediate layer, 4-designed SiO x cap layer.
Detailed Description
The invention will now be described in detail by way of example with reference to the accompanying drawings.
The invention provides a high-density composite atomic oxygen protective film, which is formed by sequentially manufacturing a seed layer 2, a siloxane film intermediate layer 3 and a cap layer 4 on an organic material substrate 1 from bottom to top.
The seed layer 2 is made of SiO x, and x is a real number in the range of [1,2 ].
The cap layer 4 is made of SiO x, and x is a real number in the range of [1,2 ].
The silicon oxide film is obtained when x is 1, and the silicon oxide film is obtained when x is 2.
Example 1:
the embodiment comprises the following design:
(1) A layer of silicon dioxide film or a similar silicon dioxide SiO x film is designed on the surface of the organic substrate, the x value is between 1 and 2, the thickness of the silicon dioxide film or the similar silicon dioxide SiO x film is in the range of 1 to 100nm, and the silicon dioxide film or the similar silicon dioxide SiO x film has the characteristics of compactness, no microscopic defects and flatness.
(2) The silicon dioxide film or the silicon dioxide-like SiO x film designed in the step (1) is used as a seed layer, a layer of siloxane film is designed, the thickness is between 200 and 600nm, and the siloxane coating has certain flexibility and anti-atomic oxygen capability.
(3) A layer of SiO 2 film is designed on the surface of the siloxane and used as a cap layer, the thickness is between 5 and 200nm, and the silicon oxide film has the characteristics of compactness, no microscopic defects and flatness. The protective design method is beneficial to effectively reducing microscopic defects in the siloxane coating, repairing surface defect defects of the siloxane coating and enhancing atomic oxygen protective performance.
In summary, the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (1)
1. The high-density composite atomic oxygen protective film is characterized in that a seed layer (2), a siloxane film intermediate layer (3) and a cap layer (4) are sequentially manufactured on an organic material substrate (1) from bottom to top; the organic material substrate (1) is a spacecraft surface functional material;
the seed layer (2) is made of SiO x, and the value of x is a real number in the range of [1,2 ];
the cap layer (4) is made of SiO x, and the value of x is a real number in the range of [1,2 ];
The seed layer (2) has a thickness of between 1 and 100 nm;
the thickness of the silicone film intermediate layer (3) is between 200 and 600 nm;
The cap layer (4) has a thickness of between 5nm and 200 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211234011.7A CN115537728B (en) | 2022-10-10 | 2022-10-10 | High-density composite atomic oxygen protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211234011.7A CN115537728B (en) | 2022-10-10 | 2022-10-10 | High-density composite atomic oxygen protective film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115537728A CN115537728A (en) | 2022-12-30 |
| CN115537728B true CN115537728B (en) | 2024-08-16 |
Family
ID=84732990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211234011.7A Active CN115537728B (en) | 2022-10-10 | 2022-10-10 | High-density composite atomic oxygen protective film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115537728B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202306493U (en) * | 2011-08-25 | 2012-07-04 | 威鸿(厦门)光学有限公司 | Touch device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI364367B (en) * | 2004-06-11 | 2012-05-21 | Toray Industries | Siloxane-based coating, optical article and process for producing the siloxane-based coating |
| BRPI0920169A2 (en) * | 2008-10-30 | 2016-08-30 | Fujifilm Corp | non-wetting coating over a fluid ejector |
| CN106397807A (en) * | 2016-08-30 | 2017-02-15 | 兰州空间技术物理研究所 | Composite protection coating for atomic oxygen |
| CN107344817A (en) * | 2017-06-21 | 2017-11-14 | 合肥市惠科精密模具有限公司 | A kind of high-wearing feature anti-fingerprint film for TFT LCD displays |
| CN108774333B (en) * | 2018-06-25 | 2020-07-21 | 北京化工大学 | Atomic oxygen resistant polyimide film material and preparation method thereof |
| CN109285915B (en) * | 2018-08-08 | 2020-04-14 | 西安电子科技大学 | Flexible transient silicon thin film phototransistor and manufacturing method |
| WO2020232629A1 (en) * | 2019-05-21 | 2020-11-26 | Dow Silicones Corporation | Polyorganosiloxane release coating and its preparation and use |
| CN111116962B (en) * | 2019-12-26 | 2022-03-25 | 兰州空间技术物理研究所 | Preparation method of atomic oxygen prevention film for space polymer material |
| KR102333685B1 (en) * | 2020-02-14 | 2021-11-30 | 한남대학교 산학협력단 | Bluelight blocking film with high visible light transmittnace and manufacturing method thereof |
| CN112646220B (en) * | 2020-05-21 | 2021-08-31 | 中国科学院上海硅酸盐研究所 | Atomic oxygen prevention polyimide composite film and preparation method thereof |
| CN112479601B (en) * | 2020-09-27 | 2022-05-13 | 比亚迪股份有限公司 | Film-coated product, preparation method thereof and electronic equipment shell |
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2022
- 2022-10-10 CN CN202211234011.7A patent/CN115537728B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202306493U (en) * | 2011-08-25 | 2012-07-04 | 威鸿(厦门)光学有限公司 | Touch device |
Non-Patent Citations (1)
| Title |
|---|
| Effect of atomic oxygen exposure on Si implanted siloxane coatings in low earth orbit environment;Shuwang Duo等;《Advanced Materials Research》;20110816;第314-316卷;第249-252页 * |
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| Publication number | Publication date |
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| CN115537728A (en) | 2022-12-30 |
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