CN109285915B - Flexible transient silicon thin film phototransistor and manufacturing method - Google Patents
Flexible transient silicon thin film phototransistor and manufacturing method Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1121—Devices with Schottky gate
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a flexible transient silicon thin film phototransistor, which mainly solves the problem that the existing phototransistor has no flexible wearable and transient degradability, and comprises a substrate (1), an adhesion layer (2), a silicon thin film active layer (3), a metal electrode (5) and a silicon dioxide passivation layer (6) from bottom to top, wherein the substrate (1) adopts a flexible transient indium tin oxide/polylactic acid substrate; a titanium dioxide insertion layer (4) is arranged between the silicon thin film active layer (3) and the metal electrode (5) to improve ohmic contact of the source and drain electrodes; a zinc oxide seed layer (7) is deposited on the silicon dioxide passivation layer (6) to provide a nucleation position for the growth of the zinc oxide nanowire; and zinc oxide nanowires (8) are grown on the zinc oxide seed layer (7) to reduce the reflection of light and increase the absorption of large-angle incident light. The invention has the characteristics of flexibility and transient dissolution, and can be used for optical communication, object detection, optical coupling, flexible wearable and transient self-destruction.
Description
Technical Field
The invention belongs to the field of semiconductor photoelectric devices, and particularly relates to a flexible transient silicon thin film phototransistor which can be used for optical communication, object detection, optical coupling, flexible wearable and transient self-destruction.
Technical Field
Today's society, flexible transient electronic technology is changing the way people make and use electronic devices. Many existing applications, such as human implantable electronic devices, require good flexibility and transient controllable degradability, and only devices that satisfy these two characteristics can normally operate in a complex environment of the human body and degrade naturally after they complete their tasks to avoid injury to the human body. For another example, in the military field, there are often events that a weapon chip with a core technology is left on a battlefield to be acquired by an enemy and divulged, and in order to avoid stealing the core technology by the enemy, the united states department of defense advanced research project initiated a "disappearing Programmable Resources (VAPR) project in 2013 to develop a revolutionary electronic device that can be degraded by itself. Flexible transient electronic technology is promoting progress in many fields, laying a solid foundation for many future applications, such as bioelectronics, electronic skins, and internet of things, and also attracting wide attention and continuous capital investment from governments and industries. Flexible transient electronic technology has evolved significantly over the past few years from nanostructured devices to electronic printed circuits, and the advent of inorganic semiconductor thin films with flexibility has prompted the fabrication and development of high performance electronic devices. However, due to the limitations of process technology and flexible transient substrate materials, the fabrication of the current flexible transient devices is mostly completed under the condition of 150 ℃ or less, and the transistor is difficult to form a good ohmic contact under the low-temperature process.
Phototransistors are key devices in many optoelectronic systems. The method plays an important role in many important fields such as space communication, aerospace, quality monitoring, flame monitoring, industrial quality control, optical imaging, photoelectric circuits, military monitoring and the like. Because the mobility of the monocrystalline silicon is higher, the silicon has good response to the wavelength of 400-1100nm and low cost, and is widely used for manufacturing the phototransistor. However, the use of the fabricated phototransistor is limited to a certain extent because the smooth surface reflects a large portion of the light and may not be able to capture light incident at a large angle. Is composed ofTo overcome this problem, studies on inorganic semiconductor nanostructures have been made, such as: ZnS, InSe, CdS, CdSe and metal oxide semiconductors such as ZnO, CeO2、V2O5The zinc oxide nanowire prepared from the zinc oxide has the transient degradable characteristic, and can effectively reduce the reflection of light and increase the absorption of large-angle incident light. If the zinc oxide nanowire with the light antireflection and degradable characteristics is applied to the manufacturing of a silicon thin film phototransistor, the problems can be solved, the light reflection is reduced, and the absorption of large-angle incident light is increased.
Disclosure of Invention
The invention aims to provide a flexible transient silicon thin film phototransistor and a manufacturing method thereof aiming at the defects of the prior art so as to improve the ohmic contact of the phototransistor under the low-temperature process; reducing light reflection and increasing absorption of large angle incident light.
In order to achieve the above object, the flexible transient silicon thin film phototransistor of the present invention comprises, from bottom to top: flexible transient substrate, adhesion layer, silicon film active layer, metal electrode, silica passivation layer, its characterized in that:
a titanium dioxide insertion layer is arranged between the silicon thin film active layer and the metal electrode to improve ohmic contact of the source and drain electrodes;
a zinc oxide seed layer is deposited on the silicon dioxide passivation layer to provide a nucleation position for the growth of the zinc oxide nanowire and promote the growth of the zinc oxide nanowire;
and zinc oxide nanowires are grown on the zinc oxide seed layer to reduce light reflection and increase absorption of large-angle incident light.
Further, the thickness of the titanium dioxide insertion layer is 0.5-1 nm.
Further, the thickness of the zinc oxide seed layer is 100-200 nm.
Furthermore, the diameter of the zinc oxide nanowire is 40-60nm, the height is 500-800nm, and the density is 1.0 multiplied by 1011cm-2～1.2×1011cm-2Densely arranged cylinders.
In order to achieve the above object, the method for manufacturing a flexible transient silicon thin film phototransistor of the present invention comprises the following steps:
1) adopting a spin coating process to spin coating SU-8 photoresist with the thickness of 1-1.5 mu m on the flexible transient substrate to form an adhesion layer;
2) transferring a monocrystalline silicon thin film with the thickness of 190-200nm on the adhesion layer as an active layer by adopting a transfer printing technology;
3) photoetching a pattern of a source drain electrode on the silicon film by adopting a photoetching process;
4) depositing a titanium dioxide insertion layer with the thickness of 0.5-1nm on the silicon film by adopting an atomic layer deposition process under the temperature condition of 90 ℃ and the nitrogen atmosphere;
5) depositing metal titanium with the thickness of 100-110nm on the titanium dioxide insertion layer by adopting an electron beam evaporation process;
6) a stripping process is adopted, a sample on which the metallic titanium is deposited is placed in an acetone solution for ultrasonic treatment for 1min, the photoresist on the silicon film and the redundant titanium dioxide and the metallic titanium are removed, and a source drain electrode with a titanium dioxide insertion layer is formed;
7) depositing a silicon dioxide passivation layer with the thickness of 100-200nm on the silicon film by adopting an electron beam evaporation process;
8) sputtering a zinc oxide light seed layer with the thickness of 100-200nm on the silicon dioxide passivation layer by adopting a magnetron sputtering system;
9) adopting a low-temperature mixed solution growth method, the diameter of the zinc oxide seed layer surface is 40-60nm, the height is 500-800nm, and the density is 1.0 multiplied by 1011cm-2-1.2×1011cm-2The zinc oxide nanowire is used for completing the manufacture of the photoelectric transistor.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the flexible transient substrate, the transient degradable zinc oxide seed layer and the zinc oxide nanowire are used, so that the prepared flexible photoelectric transistor has the characteristic of simultaneous degradation from the bottom and the top, and the application prospects of flexible wearable and transient self-destruction can be realized.
2. According to the invention, the titanium dioxide insertion layer is arranged between the silicon film active layer and the metal electrode, so that the Fermi level pinning effect of n-type silicon can be effectively inhibited, and more oxygen vacancies exist in 0.5-1nm titanium dioxide, so that the conductivity of titanium dioxide is stronger, and the ohmic contact of a source electrode and a drain electrode is improved;
3. according to the invention, the zinc oxide seed layer is deposited on the silicon dioxide passivation layer, so that a nucleation position is provided for the growth of the zinc oxide nanowire, and the growth of the zinc oxide nanowire is promoted;
4. according to the invention, as the zinc oxide nanowires grow on the zinc oxide seed layer, a surface antireflection nanostructure is formed, the reflection of light is reduced, and the absorption of large-angle incident light is increased.
Drawings
FIG. 1 is a block diagram of a device of the present invention;
fig. 2 is a schematic flow chart of the fabrication of the device of the present invention.
Detailed Description
Referring to fig. 1, the flexible transient silicon thin film phototransistor includes: the structure comprises a substrate 1, an adhesion layer 2, a silicon thin film active layer 3, a titanium dioxide insertion layer 4, a metal electrode 5, a silicon dioxide passivation layer 6, a zinc oxide seed layer 7 and a zinc oxide nanowire 8. Wherein:
the substrate 1 adopts a flexible transient indium tin oxide/polylactic acid substrate, the thickness of the indium tin oxide is 100-125nm, the thickness of the polylactic acid is 200-280 mu m, the indium tin oxide is used as a grid electrode of a transistor, and the polylactic acid plays a supporting role; the adhesion layer 2 is made of SU-8 photoresist with the thickness of 1-1.5 mu m, is positioned at the upper part of the substrate 1, is used for bonding the silicon thin film and the flexible transient substrate, and is used as a gate medium of the phototransistor; the silicon thin film active layer 3 is used as an active layer of the device, the thickness of the active layer is 190-200nm, and the phosphorus doping concentration is 1015cm-3In a crystal orientation of<100>On the upper part of the adhesion layer 2; the thickness of the titanium dioxide insertion layer 4 is 0.5-1nm, and the titanium dioxide insertion layer is positioned between the silicon thin film active layer 3 and the metal electrode 5 so as to improve ohmic contact of a source electrode and a drain electrode; the metal electrode 5 adopts titanium metal with the thickness of 100-110nm and is positioned at the upper part of the titanium dioxide insertion layer 4; the thickness of the silicon dioxide passivation layer 6 is 100-200nm and is positioned on the silicon thin filmThe film active layer 3 and the upper part of the metal electrode 5 are used for preventing the electric leakage of the zinc oxide seed layer; the thickness of the zinc oxide seed layer 7 is 100-200nm, and the zinc oxide seed layer is positioned at the upper part of the silicon dioxide passivation layer 6 and provides a material foundation for the growth of the zinc oxide nanowire; the diameter of the zinc oxide nanowire 8 is 40-60nm, the height is 500-800nm, and the density is 1.0 multiplied by 1011cm-2-1.2×1011cm-2Are provided on top of the zinc oxide seed layer 7 to reduce light reflection and increase absorption of large angle incident light.
Referring to fig. 2, the method for fabricating a flexible transient silicon thin film phototransistor according to the present invention provides the following three embodiments.
Example 1: and preparing the flexible transient silicon thin film phototransistor with the titanium dioxide insertion layer thickness of 0.5 nm.
Selecting 100nm indium tin oxide and 200 μm polylactic acid as flexible transient substrate, as shown in fig. 2(a), and spin-coating SU-8 photoresist with a thickness of 1 μm on the flexible transient substrate at a rotation speed of 7000r/s by using a spin-coating process to form an adhesion layer, as shown in fig. 2(b), for adhering the silicon thin film and the flexible transient substrate, and serving as a gate dielectric of the phototransistor.
And 2, printing the prepared silicon film on the adhesion layer.
Preparing the adhesive layer with the thickness of 190nm and the phosphorus doping concentration of 10 by using a transfer printing technology15cm-3In a crystal orientation of<100>As an active layer of the device, as shown in fig. 2(c), the following is embodied:
2a) sequentially placing the silicon SOI substrate on the insulating substrate in acetone, absolute ethyl alcohol and deionized water, respectively ultrasonically cleaning for 10min, and then blowing by using a nitrogen gun;
2b) photoetching the silicon SOI substrate on the cleaned insulating substrate to form a square etching hole pattern with the size of 20 microns multiplied by 20 microns;
2c) performing reactive ion etching on a silicon SOI substrate on the etched insulating substrate to form an etching hole, wherein the etching condition is vacuum degree of 10mTorr, and the etching gas flow ratio is as follows:Cl2：BCl360:60, the etching power is 150W, and the etching time is 200 s;
2d) soaking the silicon SOI substrate on the etched insulating substrate in hydrofluoric acid for 24h, taking out, washing with deionized water, and blow-drying with a nitrogen gun;
2e) coupling the cured polydimethylsiloxane PDMS with the upper surface of the silicon SOI on the insulating substrate, and quickly separating the two systems, wherein the polydimethylsiloxane PDMS has viscosity, so that the monocrystalline silicon film is adhered to the polydimethylsiloxane PDMS;
2f) and coupling the polydimethylsiloxane PDMS adhered with the monocrystalline silicon film with a flexible transient substrate spin-coated with SU-8 photoresist, and slowly separating the two systems, wherein the adhesion force of the silicon film and the adhesion layer is larger than that of the silicon film and the polydimethylsiloxane PDMS, so that the silicon film can be obtained by the flexible transient substrate with the adhesion layer, and the transfer printing of the silicon film is completed.
And 3, preparing a source and drain electrode pattern by utilizing a photoetching process.
And photoetching to form source and drain electrode pattern on the active silicon film layer, as shown in FIG. 2 (d).
And 4, preparing the titanium dioxide insertion layer by utilizing an atomic layer deposition method.
By adopting an atomic layer deposition process, a titanium dioxide insertion layer with the thickness of 0.5nm is deposited on the silicon film under the temperature condition of 90 ℃ and the nitrogen atmosphere, as shown in figure 2(e), titanium dioxide can effectively inhibit the Fermi level pinning effect of n-type silicon, and enough oxygen vacancies exist to ensure that the conductivity of the n-type silicon is good, so that the ohmic contact of a source electrode and a drain electrode is improved.
And 5, depositing the metal titanium by using an electron beam evaporation process.
By electron beam evaporation at 1 × 10-6In a degree of vacuum of Torr, in
The deposition rate of (c) was such that 100nm thick metallic titanium was deposited on the titanium dioxide insertion layer, as shown in FIG. 2 (f).
And 6, forming a source drain electrode by utilizing a stripping process.
And (5) putting the sample subjected to the step 5 into an acetone solution for ultrasonic treatment for 1min, removing the photoresist on the silicon film and redundant titanium dioxide and metal titanium, and forming a source drain electrode with a titanium dioxide insertion layer, as shown in fig. 2 (g).
And 7, depositing a silicon dioxide passivation layer by using an electron beam evaporation process.
By electron beam evaporation at 1 × 10-6In a degree of vacuum of Torr, in
The deposition rate of (c) a 100nm thick silicon dioxide passivation layer is deposited on the silicon thin film as shown in fig. 2(h) for preventing leakage of zinc oxide.
And 8, preparing the zinc oxide seed layer by utilizing a magnetron sputtering process.
8a) By magnetron sputtering at 1 × 10-5Degree of vacuum of Torr and a flow rate of O of 20sccm2Under the environment, a sputtering power of 500W is adopted to
Sputtering a zinc oxide seed layer with the thickness of 100nm on the silicon dioxide passivation layer;
8b) and (5) placing the sample sputtered with the zinc oxide seed layer on a hot bench at 150 ℃ for annealing for 120min to finish the preparation of the zinc oxide seed layer, as shown in fig. 2 (i).
And 9, preparing the zinc oxide nanowire by using a low-temperature mixed solution growth method.
And growing a zinc oxide nanowire on the surface of the zinc oxide seed layer by adopting a low-temperature mixed solution growth method, as shown in figure 2(j), so as to reduce the reflection of light and increase the absorption of large-angle incident light. The method comprises the following steps:
9a) dissolving urotropine and zinc nitrate in deionized water with the same volume at the ratio concentration of 0.025mol/L, and respectively and fully stirring on a magnetic control stirring table at the speed of 500rpm and at room temperature for 15 min;
9b) slowly adding the stirred zinc nitrate solution into the stirred urotropine solution by using a glass drainage tube, and stirring for 30min at the speed of 500rpm and at room temperature to form a uniform mixed solution;
9c) placing the mixed solution into a 90 deg.C hydrothermal reaction kettle, placing the zinc oxide seed layer of the device in the mixed solution with its surface facing downwards, and reacting for 180min to obtain the final product with diameter of 40nm, height of 500nm, and density of 1.0 × 1011cm-2Densely arranged cylindrical zinc oxide nanowires; and cleaning the substrate by using deionized water, and then placing the substrate on a hot bench at 150 ℃ for annealing for 60min to finish the growth of the zinc oxide nanowire, thus finishing the manufacturing of the phototransistor.
Example 2: and preparing the flexible transient silicon thin film phototransistor with the titanium dioxide insertion layer thickness of 0.7 nm.
Step one, spin coating on a flexible transient substrate to prepare an adhesion layer.
Selecting indium tin oxide with the thickness of 115nm and polylactic acid with the thickness of 240 μm as flexible transient substrates, as shown in FIG. 2 (a);
and (b) spin-coating SU-8 photoresist with the thickness of 1.3 μm on the flexible transient substrate at the rotation speed of 5000r/s by adopting a spin-coating process to form an adhesion layer, as shown in FIG. 2 (b).
And step two, printing the prepared silicon film on the adhesion layer.
Preparing the adhesive layer with a thickness of 195nm and a phosphorus doping concentration of 10 by using a transfer printing technology15cm-3In a crystal orientation of<100>The active layer of the silicon thin film is used as the active layer of the device, as shown in fig. 2(c), and the transfer preparation process is the same as that of step 2 except that the reactive ion etching time is increased to 210 s.
And step three, preparing a source and drain electrode pattern by utilizing a photoetching process.
This step was the same as step 3 in example 1.
And step four, preparing the titanium dioxide insertion layer by utilizing an atomic layer deposition method.
Depositing a 0.7nm thick titanium dioxide insertion layer on the silicon thin film by an atomic layer deposition process at 90 ℃ in a nitrogen atmosphere, as shown in FIG. 2(e),
and step five, depositing the metal titanium by using an electron beam evaporation process.
By electron beam evaporation at 1 × 10-6In a degree of vacuum of Torr, in
The deposition rate of (c) was such that 105nm thick metallic titanium was deposited on the titanium dioxide insertion layer, as shown in FIG. 2 (f).
And step six, forming a source drain electrode by utilizing a stripping process.
The specific implementation of this step is the same as step 6 in example 1.
And step seven, depositing a silicon oxide passivation layer by using an electron beam evaporation process.
A 150nm thick passivation layer of silicon dioxide was deposited on the silicon thin film using the same conditions as in step 7 of example 1, as shown in fig. 2 (h).
And step eight, preparing the zinc oxide seed layer by utilizing a magnetron sputtering process.
8.1) sputtering a zinc oxide seed layer by utilizing a magnetron sputtering process, wherein the specific process parameters are the same as those in the step 8a) of the embodiment 1, and sputtering the zinc oxide seed layer with the thickness of 150nm on the silicon dioxide passivation layer;
8.2) the preparation of the zinc oxide seed layer was completed using the same conditions as in step 8b) of example 1, as shown in FIG. 2 (i).
And step nine, preparing the zinc oxide nanowire by a low-temperature mixed solution growth method.
And growing a zinc oxide nanowire on the surface of the zinc oxide seed layer by adopting a low-temperature mixed solution growth method, as shown in figure 2(j), so as to reduce the reflection of light and increase the absorption of large-angle incident light. The method comprises the following steps:
9.1) preparing a mixed solution, wherein the specific preparation process is the same as the steps 9a) and 9b) of the example 1;
9.2) putting the device into the mixed solution for reaction at 90 ℃, putting the device zinc oxide seed layer facing downwards into the mixed solution for reaction for 190min, and growing the zinc oxide seed layer with the diameter of 50nm, the height of 600nm and the density of 1.1 multiplied by 1011cm-2Densely arranged cylindrical zinc oxide nanowires; cleaning with deionized water, and annealing at 150 deg.C for 60min to obtain oxygenAnd growing the zinc oxide nanowire to finish the manufacturing of the photoelectric transistor.
Example 3: and preparing the flexible transient silicon thin film phototransistor with the titanium dioxide insertion layer thickness of 1 nm.
And step A, spin coating on the flexible transient substrate to prepare an adhesion layer.
Selecting indium tin oxide with thickness of 125nm and polylactic acid with thickness of 280 μm as flexible transient substrate, as shown in FIG. 2 (a);
and (3) spin-coating SU-8 photoresist with the thickness of 1 mu m on the flexible transient substrate at the rotating speed of 4000r/s by adopting a spin-coating process to form an adhesion layer, as shown in figure 2 (b).
And step B, printing the prepared silicon film on the adhesion layer.
Preparing the adhesive layer with a thickness of 200nm and a phosphorus doping concentration of 10 by using a transfer printing technology15cm-3In a crystal orientation of<100>The transfer fabrication process of the silicon thin film active layer of (1) is the same as that of step 2 in example 1 except that the reactive ion etching time is increased to 220s as shown in fig. 2 (c).
And step C, preparing a source and drain electrode pattern by utilizing a photoetching process.
This step is the same as step 3 in example 1.
And D, preparing the titanium oxide insertion layer by utilizing an atomic layer deposition method.
A 1nm thick titanium dioxide insertion layer was deposited on the silicon thin film using the same conditions as in step 4 of example 1, as shown in fig. 2 (e).
And E, depositing the metal titanium by using an electron beam evaporation process.
Metallic titanium was deposited on the titania insertion layer to a thickness of 110nm using the same conditions as in step 7 of example 1, as shown in FIG. 2 (f).
And F, manufacturing a source drain electrode by using a stripping process.
The specific implementation of this step is the same as step 6 in example 1.
And G, depositing a silicon dioxide passivation layer by using an electron beam evaporation process.
A 200nm thick passivation layer of silicon dioxide was deposited on the silicon thin film using the same conditions as in step 7 of example 1, as shown in fig. 2 (h).
And step H, preparing the zinc oxide seed layer by utilizing a magnetron sputtering process.
8A) Sputtering a zinc oxide seed layer by using a magnetron sputtering process, wherein the specific process parameters are the same as those in the step 8a) of the embodiment 1, and sputtering the zinc oxide seed layer with the thickness of 200nm on the silicon dioxide passivation layer;
8B) the preparation of the zinc oxide seed layer was completed using the same conditions as in step 8b) of example 1, as shown in fig. 2 (i).
Step I, preparing the zinc oxide nanowire by a low-temperature mixed solution growth method.
And growing a zinc oxide nanowire on the surface of the zinc oxide seed layer by adopting a low-temperature mixed solution growth method, as shown in figure 2(j), so as to reduce the reflection of light and increase the absorption of large-angle incident light. The method comprises the following steps:
9A) preparing a mixed solution, wherein the specific preparation process is the same as that of the step 9a) and the step 9b) of the embodiment 1;
9B) placing the mixed solution into a 90 deg.C hydrothermal reaction kettle, placing the zinc oxide seed layer of the device in the mixed solution with its surface facing downwards, and reacting for 200min to obtain the final product with diameter of 60nm, height of 800nm, and density of 1.2 × 1011cm-2Densely arranged cylindrical zinc oxide nanowires; and cleaning the substrate by using deionized water, and then placing the substrate on a hot bench at 150 ℃ for annealing for 60min to finish the growth of the zinc oxide nanowire, thus finishing the manufacturing of the phototransistor.
The transient degradability properties of the present invention can be demonstrated by the following experiments:
experiment I, mixing sodium dihydrogen phosphate, disodium hydrogen phosphate and sodium chloride solution to prepare a phosphate buffer solution with the concentration of 0.01mol/L, adding a small amount of hydrochloric acid to obtain a solution with the pH value of 4, soaking a device manufactured by the method in the prepared solution at the room temperature of 25 ℃ for 72 hours, degrading the zinc oxide nanowire, the zinc oxide seed layer and the polylactic acid substrate, and completely losing the device, thereby realizing the transient degradation characteristic of the device.
Experiment II, mixing sodium dihydrogen phosphate, disodium hydrogen phosphate and sodium chloride solution to prepare 0.01mol/L phosphate buffer solution, adding a small amount of hydrochloric acid to obtain solution with PH 4, soaking the device manufactured by the invention in the prepared solution at 37 ℃ for 48 hours at human physiological temperature, degrading the zinc oxide nanowire, the zinc oxide seed layer and the polylactic acid substrate, and completely losing the device, thereby realizing the transient degradation characteristic of the device.
And thirdly, mixing sodium dihydrogen phosphate, disodium hydrogen phosphate and sodium chloride solutions to prepare a phosphate buffer solution with the concentration of 0.01mol/L, adding a small amount of sodium hydroxide to obtain a solution with the pH value of 12, soaking the device prepared by the method in the prepared solution at the room temperature of 25 ℃ for 24 hours, degrading the zinc oxide nanowire, the zinc oxide seed layer and the polylactic acid substrate, and completely losing the device, thereby realizing the transient degradation characteristic of the device.
From the test result, the device has controllable transient degradable property under different environmental conditions, and meets the requirements of practical application on the functions of the device.
Claims (3)
1. A manufacturing method of a flexible transient silicon thin film phototransistor comprises the following steps:
1) adopting a spin coating process to spin coating SU-8 photoresist with the thickness of 1-1.5 mu m on the flexible transient substrate to form an adhesion layer;
2) transferring a monocrystalline silicon film with the thickness of 190-200nm on the adhesion layer as an active layer by adopting a transfer printing technology;
3) photoetching a pattern of a source drain electrode on the silicon film by adopting a photoetching process;
4) depositing a titanium dioxide insertion layer with the thickness of 0.5-1nm on the silicon film by adopting an atomic layer deposition system under the temperature condition of 90 ℃ and the nitrogen atmosphere;
5) depositing metal titanium with the thickness of 100-110nm on the titanium dioxide insertion layer by adopting an electron beam evaporation process;
6) a stripping process is adopted, a sample on which the metallic titanium is deposited is placed in an acetone solution for ultrasonic treatment for 1min, the photoresist on the silicon film and the redundant titanium dioxide and the metallic titanium are removed, and a source drain electrode with a titanium dioxide insertion layer is formed;
7) depositing a silicon dioxide passivation layer with the thickness of 100-200nm on the silicon film by adopting an electron beam evaporation process;
8) sputtering a zinc oxide seed layer with the thickness of 100-200nm on the silicon dioxide passivation layer by adopting a magnetron sputtering system;
9) adopting a low-temperature mixed solution growth method, the diameter of the zinc oxide seed layer surface is 40-60nm, the height is 500-800nm, and the density is 1.0 multiplied by 1011cm-2-1.2×1011cm-2The zinc oxide nanowire is used for completing the manufacture of the photoelectric transistor.
2. The method for fabricating a phototransistor according to claim 1, wherein the implementation of 2) is as follows:
2a) sequentially placing the silicon SOI substrate on the insulating substrate in acetone, absolute ethyl alcohol and deionized water, respectively ultrasonically cleaning for 10min, and then blowing by using a nitrogen gun;
2b) photoetching the silicon SOI substrate on the cleaned insulating substrate to form a square etching hole pattern with the size of 20 microns multiplied by 20 microns;
2c) performing reactive ion etching on a silicon SOI substrate on the etched insulating substrate to form an etching hole, wherein the etching condition is vacuum degree of 10mTorr, and the etching gas flow ratio is as follows: cl2：BCl360:60, the etching power is 150W, and the etching time is 200 s;
2d) soaking the silicon SOI substrate on the etched insulating substrate in hydrofluoric acid for 24h, taking out, washing with deionized water, and blow-drying with a nitrogen gun;
2e) coupling the cured polydimethylsiloxane PDMS with the upper surface of the silicon SOI on the insulating substrate, and quickly separating the two systems, wherein the polydimethylsiloxane PDMS has viscosity, so that the monocrystalline silicon film is adhered to the polydimethylsiloxane PDMS;
2f) and coupling the polydimethylsiloxane PDMS adhered with the monocrystalline silicon film with a flexible transient substrate spin-coated with SU-8 photoresist, and slowly separating the two systems, wherein the adhesion force of the silicon film and the adhesion layer is larger than that of the silicon film and the polydimethylsiloxane PDMS, so that the silicon film can be obtained by the flexible transient substrate with the adhesion layer, and the transfer printing of the silicon film is completed.
3. The method of fabricating a phototransistor according to claim 1, wherein the implementation of 9) is as follows:
9a) dissolving urotropine and zinc nitrate in deionized water with the same volume at the ratio concentration of 0.025mol/L, and respectively and fully stirring on a magnetic control stirring table at the speed of 500rpm and at room temperature for 15 min;
9b) slowly adding the stirred zinc nitrate solution into the stirred urotropine solution by using a glass drainage tube, and stirring for 30min at the speed of 500rpm and at room temperature to form a uniform mixed solution;
9c) putting the mixed solution into a 90 ℃ hydrothermal reaction kettle, putting the zinc oxide seed layer of the device in the mixed solution with the surface facing downwards for reacting for 180min, and growing densely arranged cylindrical zinc oxide nanowires on the zinc oxide seed layer; and cleaning the substrate by using deionized water, and then placing the substrate on a hot bench at 150 ℃ for annealing for 60min to finish the growth of the zinc oxide nanowire.
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