CN115493523B - High-speed measuring method and device for three-dimensional morphology of wafer surface - Google Patents
High-speed measuring method and device for three-dimensional morphology of wafer surface Download PDFInfo
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Abstract
The invention relates to the field of wafer detection, in particular to a method and a device for measuring the three-dimensional shape of a wafer surface at a high speed, wherein the method for measuring the three-dimensional shape of the wafer surface at the high speed comprises the following steps: after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light bar data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data; acquiring two-dimensional measurement data of different rotation angles of a wafer to be measured, obtaining initial three-dimensional morphology information of the wafer to be measured with the current rotation radius, converting the initial three-dimensional morphology information of the wafer to be measured based on a cylindrical coordinate system, and then performing splicing treatment to obtain three-dimensional morphology information of the wafer surface to be measured, so that the problem of high-precision complete scanning measurement of the three-dimensional morphology of the wafer surface is effectively solved, the automation integration level in terms of software and hardware is high, the batch measurement of the three-dimensional morphology of the wafer surface can be realized, and the online high-speed detection of the three-dimensional morphology of the wafer surface can also be realized by integrating the initial three-dimensional morphology information of the wafer to be measured into a production line.
Description
Technical Field
The invention relates to the field of wafer detection, in particular to a method and a device for measuring three-dimensional morphology of a wafer surface at high speed.
Background
The surface three-dimensional data are more and more important because the characteristics of the surface of the part and the surface processing quality can be more comprehensively and truly reflected, the quality of the surface of the part can be comprehensively assessed through the measurement of the three-dimensional shape, the quality of the processing method and the rationality of the design requirement are further confirmed, and then the processing and optimizing processing technology is guided to process the surface of the part with high quality, so that the realization of the using function of the surface is ensured.
The wafer surface is a three-dimensional complex structure composed of microstructure units, and the production and manufacture of the wafer have the characteristics of nanoscale, difficulty in direct contact, microcosmic surface effect, large influence of positioning errors, large influence of dust or foreign matter interference measurement results, large influence of optical diffraction and the like. While measuring parameters such as surface profile, geometry and positional deviations, higher lateral (2-4 μm) and longitudinal (200 nm) resolutions are required. Therefore, three-dimensional measurement of the surface of the wafer is a local morphology observation all the time, the practical problem that the precision and the efficiency cannot be considered is always faced, the high-precision high-efficiency complete scanning measurement of the three-dimensional morphology of the surface of the wafer cannot be realized, and a high-speed scanning method and a high-speed scanning device are needed to solve the problem of the three-dimensional measurement of the surface of the wafer.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method and a device for measuring the three-dimensional shape of the wafer surface at high speed.
In order to achieve the above purpose, the invention provides a method for measuring three-dimensional morphology of a wafer surface at high speed, comprising the following steps:
s1, setting before measuring an optical measurement module;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light bar data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of different rotation angles of the wafer to be measured, and then obtaining initial three-dimensional morphology information of the wafer to be measured with the current rotation radius;
s4, acquiring initial three-dimensional morphology information of the wafer to be tested corresponding to different turning radiuses of the wafer to be tested;
and S5, performing splicing processing to obtain the three-dimensional morphology information of the wafer surface to be detected after converting the initial three-dimensional morphology information of the wafer to be detected based on a cylindrical coordinate system.
Preferably, the setting before the optical measurement module performs measurement includes:
and arranging the wafer to be measured under the optical measurement module, wherein the vertical distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
Preferably, the acquiring the surface reflected light bar data of the wafer to be measured, and calculating to obtain the XZ coordinate value corresponding to the current light curtain line includes:
obtaining the relative Z-direction height value of the surface of the wafer to be detected corresponding to the current light curtain line by utilizing the optical detection method of the surface reflection light stripe data of the wafer to be detected based on the pixel lower light stripe energy extraction technology, and then obtaining the XZ coordinate value corresponding to the current light curtain line of the wafer to be detected;
the X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value relative to the reference plane.
Preferably, the acquiring the two-dimensional measurement data of different rotation angles of the wafer to be measured to obtain the initial three-dimensional morphology information of the wafer to be measured with the current rotation radius includes:
when the wafer to be measured rotates by a fixed degree theta, collecting measurement data (x) corresponding to the current rotation angle i , z i )；
Using the measurement data (x i , z i ) Obtaining three-dimensional information (x) of the wafer to be tested at the current radius of gyration i , y i , z i ) And the initial three-dimensional morphology information of the wafer to be measured is used as the current turning radius.
Preferably, the step of performing the stitching processing to obtain the three-dimensional morphology information of the wafer surface to be measured after the initial three-dimensional morphology information of the wafer to be measured is converted based on the cylindrical coordinate system includes:
the initial three-dimensional morphology information (x) of the wafer to be measured corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axis of the wafer rotating shaft to be detected to obtain basic three-dimensional morphology information (r, theta, z) of the wafer to be detected;
and performing splicing processing by using the three-dimensional morphology information (r, theta, z) of the basis of the wafer to be detected corresponding to different turning radiuses to obtain the three-dimensional morphology information of the surface of the wafer to be detected.
Based on the same inventive concept, the invention also provides a wafer surface three-dimensional morphology high-speed measuring device, which comprises a marble base, a motion module and an objective table assembly, wherein the marble base is provided with the motion module;
the motion module comprises a high-precision air-float motion X-axis, a high-precision air-float motion Y-axis, a high-precision motion Z-axis, a high-precision air-float rotary C-axis and an optical measurement module, wherein the high-precision air-float motion X-axis and the high-precision air-float motion Y-axis are arranged on a marble base in a crisscross stack, the high-precision air-float motion C-axis is arranged above the high-precision air-float motion X-axis and the high-precision air-float motion Y-axis, and the high-precision motion Z-axis is arranged on a marble door;
the objective table component is arranged above the high-precision air-floatation rotary C shaft and is connected with the high-precision air-floatation rotary C shaft through the inclination adjusting component.
Preferably, the optical measurement module is a high-precision high-sampling-rate three-dimensional line sensor.
Compared with the closest prior art, the invention has the following beneficial effects:
the three-dimensional line sensor with high precision and high sampling rate is used for carrying out one-time rotation scanning measurement on the surface of the wafer to be measured at a sampling interval lower than the requirement of transverse resolution, so that the problem of high-precision complete scanning measurement of the three-dimensional morphology of the surface of the wafer is effectively solved, the automation integration level in terms of software and hardware is higher, the batch measurement of the three-dimensional morphology of the surface of the off-line wafer can be realized, and the high-speed detection of the three-dimensional morphology of the surface of the on-line wafer can also be realized by integrating the three-dimensional line sensor into a production line.
Drawings
FIG. 1 is a flow chart of a method for measuring three-dimensional morphology of a wafer surface at high speed;
FIG. 2 is a schematic diagram of a device for measuring three-dimensional morphology of a wafer surface at a high speed;
FIG. 3 is a detailed schematic diagram of a device for measuring three-dimensional morphology of a wafer surface in a high-speed manner;
FIG. 4 is a flow chart of measurement usage of a device for measuring three-dimensional morphology of a wafer surface according to the present invention;
FIG. 5 is a schematic diagram of a concentric circle scanning measurement path of a wafer surface three-dimensional morphology high-speed measurement device provided by the invention;
FIG. 6 is a schematic diagram of a spiral scanning measurement path of a high-speed measuring device for three-dimensional morphology of a wafer surface;
FIG. 7 is a schematic diagram of a centrifugal arc raster scan measurement path of a wafer surface three-dimensional morphology high-speed measurement device provided by the invention;
FIG. 8 is a schematic diagram of the time-consuming calculation of the centrifugal arc grid scanning measurement of the high-speed measuring device for the three-dimensional morphology of the wafer surface;
reference numerals:
1. marble Dan Longmen; 2. an optical measurement module; 3. a wafer to be tested; 4. marble Dan Ji; 5. high-precision air floatation movement X axis; 6. high-precision air floatation movement Y axis; 7. high-precision air-floatation rotary C shaft; 8. a stage assembly; 9. a tilt adjustment assembly; 10. high-precision motion Z axis; 11. a first circle of scanning line width indication; 12. a second circle of scanning line width indication; 13. scanning interval indication; 14. a scanning driving line schematic; 15. single scan linewidth indication.
Detailed Description
The following describes the embodiments of the present invention in further detail with reference to the drawings.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
the invention provides a high-speed measuring method for three-dimensional morphology of a wafer surface, which is shown in figure 1 and comprises the following steps:
s1, setting before measuring an optical measurement module;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light bar data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of different rotation angles of the wafer to be measured, and then obtaining initial three-dimensional morphology information of the wafer to be measured with the current rotation radius;
s4, acquiring initial three-dimensional morphology information of the wafer to be tested corresponding to different turning radiuses of the wafer to be tested;
and S5, performing splicing processing to obtain the three-dimensional morphology information of the wafer surface to be detected after converting the initial three-dimensional morphology information of the wafer to be detected based on a cylindrical coordinate system.
In this embodiment, in the method for measuring the three-dimensional morphology of the wafer surface at a high speed, the optical measurement module is moved above the wafer to be measured by the carrying displacement of the movement module, and the distance between the optical measurement module and the wafer to be measured in the vertical direction meets the measurement range of the optical measurement module.
S1 specifically comprises:
s1-1, arranging a wafer to be measured under the optical measurement module, wherein the vertical distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
S2 specifically comprises:
s2-1, acquiring an XZ coordinate value corresponding to the current light curtain line of the wafer to be tested after acquiring a relative Z height value of the surface of the wafer to be tested corresponding to the current light curtain line by utilizing an optical detection method of light stripe data reflected by the surface of the wafer to be tested based on a pixel lower light stripe energy extraction technology;
the X coordinate is a coordinate value along the direction of the light curtain line, and the Z direction is a distance value calculated by the optical measuring module relative to the reference plane.
S3 specifically comprises:
s3-1, when the wafer to be tested rotates by a fixed degree theta, collecting measurement data (x) corresponding to the current rotation angle i , z i )；
S3-2, using the measurement data (x) corresponding to the current rotation angle under the same radius i , z i ) Obtaining three-dimensional information (x) of the wafer to be tested at the current radius of gyration i , y i , z i ) And the initial three-dimensional morphology information of the wafer to be measured is used as the current turning radius.
This practice isIn an embodiment, the wafer to be measured is in a circular sheet structure, so that a rotation/near-rotation scanning mode can be set according to structural characteristics of the wafer to be measured, the wafer to be measured is carried on the high-precision air-float rotation C-axis to perform rotation motion, the motion module performs one motion of fixing the degree θ per rotation, the encoder triggers the optical measurement module to acquire and record one measurement data (x i , z i ) Realizing equidistant acquisition and recording of three-dimensional information (x) of the surface of the wafer to be tested at the current turning radius position i , y i , z i )。
In this embodiment, a method for measuring a three-dimensional topography of a wafer surface at a high speed, where a three-dimensional scanning measurement area between adjacent radius gyration positions in a wafer to be measured has a certain overlapping range, and a calculation formula of the overlapping range is as follows:
wherein ,kin the region of the overlap,Lfor the line width of the measurement of the sensor,r i for the radius of gyration of the wafer to be measured,r i+1 is the next adjacent radius of gyration of the wafer to be measured.
S5 specifically comprises the following steps:
s5-1, the initial three-dimensional morphology information (x) of the wafer to be detected corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axis of the wafer rotating shaft to be detected to obtain basic three-dimensional morphology information (r, theta, z) of the wafer to be detected;
s5-2, performing splicing processing by using the three-dimensional shape information (r, theta, z) of the basis of the wafer to be detected corresponding to different turning radiuses to obtain the three-dimensional shape information of the surface of the wafer to be detected.
Example 2:
the invention provides a wafer surface three-dimensional morphology high-speed measuring device, which is shown in fig. 2, and comprises a marble Dan Ji, a motion module and an objective table assembly 8, wherein the motion module is arranged on a marble base 4; as shown in fig. 3, the motion module comprises a high-precision air-floating motion X-axis 5, a high-precision air-floating motion Y-axis 6, a high-precision motion Z-axis 10, a high-precision air-floating rotation C-axis 7 and an optical measurement module 2, wherein the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6 are stacked on the marble base 4 in a crisscross manner, the high-precision air-floating motion C-axis 7 is arranged above the high-precision air-floating motion X-axis 5 and the high-precision air-floating motion Y-axis 6, and the high-precision motion Z-axis 10 is arranged on the marble gantry 1; the objective table component 8 is arranged above the high-precision air-float rotary C shaft 7 and is connected with the high-precision air-float rotary C shaft 7 through the inclination adjusting component 9; the optical measurement module 2 is a high-precision high-sampling-rate three-dimensional line sensor.
Example 3:
the invention provides a practical application method for high-speed measurement of three-dimensional morphology of a wafer surface, which comprises the following steps:
step 1: the optical measurement module is carried by the motion module to move above the wafer to be measured, and the vertical distance of the optical measurement module meets the measurement range of the optical measurement module.
Step 2: the optical measurement module projects a measuring light curtain line to irradiate the surface of the wafer to be measured, and the information of the reflected light bar on the surface of the wafer to be measured returns to the optical measurement module. The optical detection method based on the light bar energy extraction technology under the pixels accurately maps the pixel wavelength to the distance between the measured object and the sensor, and the relative Z-direction height value of the surface of the wafer to be measured under the current light curtain line coverage is calculated and reconstructed to obtain the XZ coordinate value of the surface of the wafer to be measured under the current light curtain line coverage.
The X coordinate is a coordinate value along the direction of the light curtain line, and the Z direction is a distance value calculated by the optical measuring module relative to the reference plane.
Step 3: the wafer to be tested is of a circular lamellar structure, so that a rotation/near-rotation scanning mode can be set according to structural characteristics of the wafer to be tested, the wafer to be tested is carried on the high-precision air floatation rotation C shaft to do rotation motion, the motion module moves once every rotation by a fixed degree theta, and the encoder triggers the optical measurement module to acquire and record one piece of measurement data (x i , z i ) Realizing equidistant acquisition and recording of three-dimensional information (x) of the surface of the wafer to be tested at the current turning radius position i , y i , z i )。
Step 4: the high-precision air-floatation rotary C shaft in the motion module performs rotary motion, and is matched with the horizontal motion of the high-precision air-floatation rotary XY shaft to realize different rotary radiuses r in the wafer to be tested i Three-dimensional scan measurement under position.
Wherein the three-dimensional scanning measurement area between adjacent turning radius positions in the wafer to be measured has a certain overlapping range, and the overlapping range is [ L- (r) i+1 - r i )]L is the measured linewidth of the optical sensor.
Step 5: and (2) repeating the steps (2-4), unifying the measurement data (x, y, z) under the Cartesian coordinate system of the optical measurement module around the rotation axis of the high-precision air floatation rotation C shaft to the position (r, theta, z) under the cylindrical coordinate system, and acquiring the three-dimensional shape information of the surface of the wafer to be measured after splicing and combining the scanning data under different radiuses.
Example 4:
the invention provides a measuring method of a wafer surface three-dimensional morphology high-speed measuring device, as shown in fig. 4, comprising the following steps:
(1) The measurement is started by first loading the wafer 3 to be measured onto the stage assembly 8 by means of an automated loading device.
(2) And controlling the movement module to carry the wafer 3 to be measured to move within the working distance range of the optical measurement module 2, and setting sensor measurement parameters including measuring light curtain distance, Z-direction measurement distance, exposure intensity, acquisition frame rate and measurement length.
(3) Based on the motion module, the wafer 3 to be tested and the optical measurement module 2 are carried, and an automatic measurement path planning is set, which comprises the following specific steps: firstly, parameter setting is carried out according to parameters of the geometric dimension of the wafer, the line width of the optical measurement module and the overlapping range, then the path type is selected, and a rotary scanning measurement path of the motion module in the measurement system is determined and generated, wherein the specific path is described as an example.
(4) And clicking a measurement start button, and under the planning of the automatic measurement path, carrying out full-automatic high-speed scanning measurement on the surface of the wafer 3 to be measured, and scanning to obtain the three-dimensional appearance of the surface of the complete wafer.
(5) And performing data processing on the obtained three-dimensional morphology of the wafer surface, wherein the data processing comprises common Gaussian filtering denoising, and correcting the inclination of the point cloud by using three points as reference surfaces. The specific parameter evaluation processing comprises the following steps of:
1) Finding three points on a reference plane, calculating a plane of ax+by+cz+d=0 through a formula, measuring three points on a three-dimensional point cloud of the surface of the wafer, calculating distances D1, D2 and D3 from the plane through the formula, and calculating the three points to obtain final flatness;
2) Calculating and evaluating the surface roughness information of the wafer based on international standards of the surface roughness assessment methods of ISO 25178 and ISO 4287;
3) Based on International organization for standardization ISO5436-1:2000 standard calculation and evaluation of the step height of the wafer surface measurement data;
4) And selecting the line width at the position which is half of the structure height from the bottom in the direction vertical to the line width, namely the line width of the middle part, as the line width of the data measured on the surface of the wafer.
(6) The measurement results are saved.
(7) And finally, discharging the wafer 3 to be tested through an automatic feeding device, and ending the measurement.
Based on the embodiment of the disclosure, various rotary wafer scanning measurement paths can be set, and the method is limited to the line width length of the optical measurement module, and can realize the complete scanning measurement of the three-dimensional morphology of the wafer surface by multiple rotary grid scanning. In order to ensure high-speed scanning measurement of the three-dimensional morphology of the wafer surface, the time consumption of the complete three-dimensional scanning of the Shan Zhangjing wafer can be effectively reduced by reducing the scanning traversal times and the scanning arc length. Therefore, good wafer measurement path planning is important for high-efficiency scanning measurement, and specific examples are as follows:
example 1:
as shown in fig. 5, in the classical concentric circle grid gyration scanning measurement mode, the surface three-dimensional topography scanning measurement is performed on the wafer 3 to be measured by adopting a form of scanning driving line indication 14 of concentric circles with different radiuses, and the time used for the complete scanning measurement is as follows:
wherein ,Rfor the radius of the wafer 3 to be tested,△Pthe optical measurement module 2 is scanned for drive line direction spacing,Lthe optical measurement module 2 is scanned for line width,△x 1 the optical measurement module 2 is scanned for line lateral spacing,△x 1 ≤L，vfor the scanning speed of the optical measuring module 2,ifor the number of scan turns.
Example 2:
the concentric circle grid rotation scanning measurement mode needs to completely scan the maximum outer diameter of the wafer 3 to be measured, and consumes long time. Therefore, in order to reduce scanning time, a spiral line scanning driving line mode is adopted to perform surface three-dimensional topography scanning measurement on the wafer 3 to be measured, as shown in fig. 6, all the time of complete scanning measurement is as follows:
wherein ,Rfor the radius of the wafer 3 to be tested,△Pscanning the optical measurement module 2 for a drive line direction interval deltax 2 The optical measurement module 2 is scanned for line lateral spacing,vfor the scanning speed of the optical measuring module 2,ifor the number of scan turns.
Comparative examples 1 and 2, to ensure that the optical measurement module 2 scan line is able to traverse the entire wafer 3 under test,△x 2 ＜△x 1 ≤ L，the time consumption of the wafer spiral line scanning driving line mode is that eachi×△x 2 The lower radius semicircle perimeter is used for scanning. Comparing the concentric circle grid gyration sweepsAnd the wafer spiral line scanning driving line mode obviously reduces the time consumption of the maximum outer diameter scanning of the wafer 3 to be measured, so that the time consumption of the wafer spiral line scanning driving line mode is better than that of the concentric wafer grid gyration scanning measurement mode under the same measurement condition.
Example 3:
to further reduce the time required to completely scan the three-dimensional morphology of the wafer 3 to be measured. The disclosure proposes a novel centrifugal arc grid scanning mode to perform surface three-dimensional morphology scanning measurement on the wafer 3 to be measured, as shown in fig. 8. The calculation principle of the time consumption of the specific centrifugal arc raster scan measurement is shown in fig. 7, and the time consumption of the centrifugal arc raster scan measurement is that eachi×△x 1 When scanning arc length under radius, the whole scanning measurement time is as follows:
wherein ,Rfor the radius of the wafer 3 to be tested,△Pscanning the optical measurement module 2 for a drive line direction interval deltax 1 The optical measurement module 2 is scanned for line lateral spacing,vfor the scanning speed of the optical measuring module 2,ifor the number of scan turns,Lthe optical measurement module 2 is scanned for line width,L 1 as the centrifugal quantity of the centrifugal arc raster scanning mode, the angle AO 2 E is the number of degrees of the central angle of the arc length AE, and is the angle AO 2 O 1 Is +.AO 2 External angle of B.
Comparative examples 2 and 3 the optical measurement module 2 takes time to traverse the entire wafer 3 under test using a centrifugal circular arc raster scan approach for each (2R-i△x 1 ) Scan times at arc length. The total length of the arc length of the centrifugal arc grid is smaller than that of the spiral line scanning driving line in the embodiment 2i×△x 2 ) The sum of the semicircular circumferences is the same, so that under the same measurement condition, the centrifugal circular arc grid scanning mode of the wafer is time-consuming to be better than the spiral scanning driving line mode. The wafer centrifugal arc grid scanning mode disclosed in the example can ensure the optical measurementAnd the full three-dimensional morphology scanning measurement of the surface of the wafer is realized by high-efficiency scanning on the premise of measuring the accuracy of the measuring module at the level of 2 hundred nanometers.
It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is intended to be covered by the claims.
Claims (5)
1. The high-speed measuring method for the three-dimensional morphology of the wafer surface is characterized by comprising the following steps of:
s1, setting before measuring an optical measurement module;
s2, after the light curtain line corresponding to the optical measurement module is projected to the wafer to be measured, collecting surface reflection light bar data of the wafer to be measured, calculating to obtain an XZ coordinate value corresponding to the current light curtain line, and using the XZ coordinate value as two-dimensional measurement data;
s3, acquiring two-dimensional measurement data of different rotation angles of the wafer to be measured, and then obtaining initial three-dimensional morphology information of the wafer to be measured with the current rotation radius;
s3-1, when the wafer to be tested rotates by a fixed degree theta, collecting measurement data (x) corresponding to the current rotation angle i , z i )；
S3-2, using the measurement data (x) corresponding to the current rotation angle under the same radius i , z i ) Obtaining three-dimensional information (x) of the wafer to be tested at the current radius of gyration i , y i , z i ) As the initial three-dimensional morphology information of the wafer to be measured of the current radius gyration;
s4, acquiring initial three-dimensional morphology information of the wafer to be tested corresponding to different turning radiuses of the wafer to be tested;
s5, converting the initial three-dimensional morphology information of the wafer to be detected based on a cylindrical coordinate system, and then performing splicing treatment to obtain the three-dimensional morphology information of the surface of the wafer to be detected;
s5-1, the initial three-dimensional morphology information (x) of the wafer to be detected corresponding to the optical measurement module i , y i , z i ) Performing cylindrical coordinate system conversion based on the axis of the wafer rotating shaft to be detected to obtain basic three-dimensional morphology information (r, theta, z) of the wafer to be detected;
s5-2, performing splicing processing by using the basic three-dimensional morphology information (r, theta, z) of the wafer to be detected corresponding to different turning radiuses to obtain the three-dimensional morphology information of the surface of the wafer to be detected;
obtaining complete scanning measurement all time by using a centrifugal arc grid scanning mode, wherein the calculation formula of the complete scanning measurement all time is as follows:
wherein ,Rfor the radius of the wafer (3) to be tested,△Pscanning the optical measuring module (2) for drive line direction spacing, deltax 1 For the optical measuring module (2) scanning line transverse spacing,vfor the scanning speed of the optical measuring module (2),ifor the number of scan turns,L 1 the centrifugal amount is the centrifugal amount of the centrifugal arc raster scanning method.
2. The method of claim 1, wherein the pre-measurement setting of the optical measurement module comprises:
and arranging the wafer to be measured under the optical measurement module, wherein the vertical distance between the wafer to be measured and the optical measurement module corresponds to the measuring range of the optical measurement module.
3. The method for measuring three-dimensional morphology of a wafer surface at a high speed according to claim 1, wherein the step of acquiring the data of the surface reflection light bar of the wafer to be measured to obtain the XZ coordinate value corresponding to the current light curtain line comprises the steps of:
obtaining the relative Z-direction height value of the surface of the wafer to be detected corresponding to the current light curtain line by utilizing the optical detection method of the surface reflection light stripe data of the wafer to be detected based on the pixel lower light stripe energy extraction technology, and then obtaining the XZ coordinate value corresponding to the current light curtain line of the wafer to be detected;
the X coordinate is a coordinate value along the light curtain line direction, and the Z direction is a distance value relative to the reference plane.
4. A device for the high-speed measurement method of the three-dimensional morphology of the wafer surface according to any one of the claims 1 to 3, which is characterized by comprising a marble base, a movement module and a stage assembly, wherein the movement module is arranged on the marble base;
the motion module comprises a high-precision air-float motion X-axis, a high-precision air-float motion Y-axis, a high-precision motion Z-axis, a high-precision air-float rotary C-axis and an optical measurement module, wherein the high-precision air-float motion X-axis and the high-precision air-float motion Y-axis are arranged on a marble base in a crisscross stack, the high-precision air-float motion C-axis is arranged above the high-precision air-float motion X-axis and the high-precision air-float motion Y-axis, and the high-precision motion Z-axis is arranged on a marble door;
the objective table component is arranged above the high-precision air-floatation rotary C shaft and is connected with the high-precision air-floatation rotary C shaft through the inclination adjusting component.
5. The apparatus of claim 4, wherein the optical measurement module is a high-precision high-sampling rate three-dimensional line sensor.
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| PCT/CN2022/141809 WO2024108721A1 (en) | 2022-11-21 | 2022-12-26 | High-speed measurement method and device for three-dimensional surface topography of wafer |
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| CN117059512B (en) * | 2023-10-13 | 2024-01-26 | 苏州瑞霏光电科技有限公司 | Three-dimensional surface microscopic measurement method and system for wafer |
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| CN107726999B (en) * | 2017-11-14 | 2024-02-06 | 深圳砺剑天眼科技有限公司 | Object surface three-dimensional information reconstruction system and working method thereof |
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