CN115485862A - 紫外led及其制作方法 - Google Patents
紫外led及其制作方法 Download PDFInfo
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- CN115485862A CN115485862A CN202080097534.4A CN202080097534A CN115485862A CN 115485862 A CN115485862 A CN 115485862A CN 202080097534 A CN202080097534 A CN 202080097534A CN 115485862 A CN115485862 A CN 115485862A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000007704 transition Effects 0.000 claims abstract description 144
- 239000000463 material Substances 0.000 claims abstract description 99
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 469
- 239000002346 layers by function Substances 0.000 claims description 79
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 8
- 230000000295 complement effect Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 17
- 238000000137 annealing Methods 0.000 abstract description 12
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002386 air freshener Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
本申请提供了一种紫外LED及其制作方法，制作方法中，在电子提供层上形成N型过渡层和/或在空穴提供层上形成P型过渡层，电子提供层与空穴提供层的材料都至少包括Al、Ga、N三种元素，N型过渡层与P型过渡层的材料为GaN；在N型过渡层上形成N电极，N型过渡层与N电极之间形成欧姆接触；在P型过渡层上形成P电极，P型过渡层与P电极之间形成欧姆接触。相对于在含铝GaN基材料上直接形成欧姆接触电极，可以避免退火，以及避免退火过程中的高温造成电子提供层性能下降，有源层中电子空穴复合率降低。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/089999 WO2021226867A1 (zh) | 2020-05-13 | 2020-05-13 | 紫外led及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115485862A true CN115485862A (zh) | 2022-12-16 |
Family
ID=78526175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080097534.4A Pending CN115485862A (zh) | 2020-05-13 | 2020-05-13 | 紫外led及其制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230080225A1 (zh) |
| CN (1) | CN115485862A (zh) |
| TW (1) | TWI798695B (zh) |
| WO (1) | WO2021226867A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116632138A (zh) * | 2023-07-24 | 2023-08-22 | 江西乾照光电有限公司 | 一种深紫外led外延片、外延生长方法及led芯片 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114864783A (zh) * | 2022-03-15 | 2022-08-05 | 嘉兴鼎镓半导体有限公司 | 一种紫外线发光二极管结构 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000252230A (ja) * | 1998-12-28 | 2000-09-14 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
| CN106025007B (zh) * | 2016-07-15 | 2018-03-13 | 厦门乾照光电股份有限公司 | 一种深紫外发光二极管的芯片结构及其制作方法 |
| WO2018035322A1 (en) * | 2016-08-17 | 2018-02-22 | The Regents Of The University Of California | Contact architectures for tunnel junction devices |
| CN110890447A (zh) * | 2019-11-22 | 2020-03-17 | 山东大学 | 一种具有渐变Al组分AlGaN导电层的发光二极管及其制备方法 |
-
2020
- 2020-05-13 CN CN202080097534.4A patent/CN115485862A/zh active Pending
- 2020-05-13 WO PCT/CN2020/089999 patent/WO2021226867A1/zh active Application Filing
- 2020-05-13 US US17/802,107 patent/US20230080225A1/en active Pending
-
2021
- 2021-05-12 TW TW110117146A patent/TWI798695B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116632138A (zh) * | 2023-07-24 | 2023-08-22 | 江西乾照光电有限公司 | 一种深紫外led外延片、外延生长方法及led芯片 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI798695B (zh) | 2023-04-11 |
| TW202143510A (zh) | 2021-11-16 |
| WO2021226867A1 (zh) | 2021-11-18 |
| US20230080225A1 (en) | 2023-03-16 |
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