CN115483338A - Micro-integrated LED chip and preparation method thereof - Google Patents
Micro-integrated LED chip and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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Abstract
The invention relates to a micro-integrated LED chip and a preparation method thereof. The chip includes: a support substrate comprising opposing first and second surfaces; a plurality of through holes penetrating from the first surface to the second surface of the support substrate; the metal filler is filled in the through hole; a first electrode structure on the first surface and electrically connected to the metal fill; the light-emitting unit is positioned on the first electrode structure and is electrically connected with the first electrode structure; a second electrode structure located on the second surface and electrically connected to the metal filler; and the protective film is coated on the first surface of the supporting substrate and coats the first electrode structure and the light-emitting unit. The invention can solve the problems that the photoelectric property consistency of the existing LED chip is poor and the chip can not be repaired due to the failure of testing.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a micro-integrated LED chip and a preparation method thereof.
Background
People can not live away from electronic screens, and continuously require higher resolution, higher contrast and more gorgeous screen pictures so as to achieve the visual experience close to reality. The screen technology is upgraded every 6-8 years, and the screen technology reaches the ultra-high definition visual age at present, wherein Mini/Micro LED serving as the display equipment technology is expected to take the lead to the ultra-high definition market.
Micro LEDs are LED chips with a size of less than 50 μm, are considered to be the most likely to replace OLEDs, and become the next generation of LED display technology, because of their small size, their pitch can be made to be below P0.5, and are widely used in devices and places that require high brightness, ultra-high resolution, and high color saturation. Although Micro LEDs have many advantages, they cannot be tested, resulting in poor uniformity of optoelectronic properties and cannot be repaired.
Disclosure of Invention
The invention aims to provide a micro-integrated LED chip and a preparation method thereof, and aims to solve the problems that the photoelectric property consistency of the chip is poor and the chip cannot be repaired due to the fact that the conventional LED chip cannot be tested.
In order to achieve the purpose, the invention provides the following scheme:
a micro-integrated LED chip, comprising:
a support substrate comprising opposing first and second surfaces;
a plurality of through holes penetrating from the first surface to the second surface of the support substrate;
the metal filler is filled in the through hole;
a first electrode structure on the first surface and electrically connected to the metal fill;
the light-emitting unit is positioned on the first electrode structure and is electrically connected with the first electrode structure;
a second electrode structure on the second surface and electrically connected to the metal filler;
and the protective film covers the first surface of the support substrate and covers the first electrode structure and the light-emitting unit.
Optionally, the filling height of the metal filler is greater than the height of the through hole, and the metal filler protrudes from the first surface and the second surface;
the metal filler comprises a bonding layer and a conductive layer; the bonding layer is filled in the through hole, and the conducting layer is located outside the bonding layer and protrudes out of the first surface and the second surface.
Optionally, the height of the metal filler protruding from the first surface and protruding from the second surface is not greater than 5 μm.
Optionally, the first electrode structure comprises m subgroups, each subgroup comprises a first electrode and a second electrode, the first electrode and the second electrode are electrodes with opposite polarities, and m is an integer greater than 2; the number of the through holes is at least m + 1;
the m first electrodes of the m subgroups are commonly connected to the metal filler in the first via holes, and the m second electrodes of the m subgroups are respectively connected to the metal filler in the m via holes different from the first via holes in a one-to-one correspondence manner.
Optionally, each of the subsets further comprises a bridging electrode and a contact electrode; the first electrodes of each subgroup are connected to the corresponding metal fillers through the bridging electrodes of the same subgroup, and the m bridging electrodes of the m subgroups are electrically connected with each other; the second electrodes of each subset are connected to the corresponding metal fillings by contact electrodes of the same subset.
Optionally, the second electrode structure includes m +1 sub-electrode groups, each sub-electrode group includes an electrode, and m +1 electrodes in the m +1 sub-electrode groups are respectively connected to the metal fillers of m +1 through holes corresponding to the first electrode structure in a one-to-one correspondence manner.
Optionally, the m +1 sub-electrode sets are respectively located at m +1 corners of the m +1 polygon, and a distance between the sub-electrode sets at two adjacent corner positions is 10 μm to 500 μm.
Optionally, each of the sub-electrode groups further includes a bridging electrode and a contact electrode, and the electrodes of each sub-electrode group are connected to the corresponding metal fillers through the bridging electrode and the contact electrode of the same sub-electrode group.
Optionally, the light emitting unit includes m light emitting sub-units, each of which includes a light emitting structure, a first electrode connected to the light emitting structure, and a second electrode connected to the light emitting structure; the m first electrodes of the m light-emitting subunits are connected with the m first electrodes of the first electrode structure in a bonding mode, and the m second electrodes of the m light-emitting subunits are respectively connected with the m second electrodes of the first electrode structure in a one-to-one correspondence mode in the bonding mode;
the m luminous subunits are respectively a blue light luminous subunit, a red light luminous subunit and a green light luminous subunit, and the number of the blue light luminous subunit, the red light luminous subunit and the green light luminous subunit is at least one.
The invention also provides a preparation method of the micro-integrated LED chip, which is used for preparing the micro-integrated LED chip and comprises the following steps:
preparing a support substrate; the support substrate comprises a first surface and a second surface;
preparing a plurality of through holes penetrating through the first surface and the second surface of the support substrate;
filling metal fillers in each through hole;
manufacturing a first electrode structure on the first surface of the supporting substrate, and electrically connecting the first electrode structure with the metal filler;
manufacturing a second electrode structure on the second surface of the supporting substrate, and electrically connecting the second electrode structure with the metal filler;
placing a light emitting unit on the first electrode structure, and connecting the light emitting unit and the first electrode structure in a bonding mode;
coating a protective film on the first surface of the supporting substrate, and coating the first electrode structure and the light-emitting unit to form a wafer coated with the protective film;
cutting the wafer coated with the protective film to form independent LED chips; each LED chip includes one of the light emitting units.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
according to the invention, the LED chip can be tested by the arrangement mode of the through hole, the metal filler, the first electrode structure, the second electrode structure and the light-emitting unit, so that the LED chip can be repaired. In addition, the LED chip prepared by the invention has good consistency of photoelectric properties.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a structural diagram of a micro-integrated LED chip in embodiment 1 of the present invention;
fig. 2 is a schematic flow chart of a process for preparing a micro-integrated LED chip according to embodiment 1 of the present invention;
FIG. 3 is a schematic view of preparing a support substrate according to example 1 of the present invention;
FIG. 4 is a schematic view of the preparation of a through-hole in example 1 of the present invention;
FIG. 5 is a schematic view of a filler metal filler in accordance with example 1 of the present invention;
FIG. 6 is a schematic view of a first electrode structure prepared in example 1 of the present invention;
fig. 7 is a schematic view of a first electrode structure in embodiment 1 of the present invention;
FIG. 8 is a schematic view of a second electrode structure prepared in example 1 of the present invention;
FIG. 9 is a schematic view of a second electrode structure according to embodiment 1 of the present invention;
FIG. 10 is a schematic view of a light-emitting unit prepared in example 1 of the present invention;
FIG. 11 is a schematic view of a light emitting unit according to embodiment 1 of the present invention;
FIG. 12 is a schematic view of the preparation of a protective film in example 1 of the present invention;
FIG. 13 is a schematic view of cutting individual chips according to embodiment 1 of the present invention;
fig. 14 is a structural view of a micro-integrated LED chip in embodiment 2 of the present invention;
fig. 15 is a schematic flow chart of the preparation of a micro-integrated LED chip according to embodiment 2 of the present invention;
FIG. 16 is a schematic view of preparing a support substrate in accordance with example 2 of the present invention;
FIG. 17 is a schematic view of the preparation of a through-hole in example 2 of the present invention;
FIG. 18 is a schematic view of an oxidation treatment in example 2 of the present invention;
FIG. 19 is a schematic view of a filler metal filler in accordance with example 2 of the present invention;
FIG. 20 is a schematic view of a first electrode structure prepared in example 2 of the present invention;
FIG. 21 is a schematic view of a structure of a second electrode according to example 2 of the present invention;
FIG. 22 is a schematic view of a light-emitting unit prepared in example 2 of the present invention;
fig. 23 is a schematic view of the preparation of the protective film in embodiment 2 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.
Example 1
Reference numerals in example 1: 1-a support substrate, 2-a through hole, 3-a metal filler, 4-a first electrode structure, 5-a second electrode structure, 6-a bonding layer, 7-an electrode structure of a light-emitting unit, 8-a light-emitting structure of a light-emitting unit, 9-a protective film, 10 light-emitting units.
As shown in fig. 1, the micro-integrated LED chip prepared in this embodiment includes:
a support substrate 1 comprising two oppositely facing surfaces a and B;
a through hole 2 penetrating from the a surface to the B surface of the support substrate 1;
a metal filler 3 filled in the through hole 2;
a first electrode structure 4 located over the a surface of the support substrate 1, and a second electrode structure 5 located over the B surface of the support substrate 1;
a light emitting unit 10 on the first electrode structure 4;
a protective film 9 covering the surface of the support substrate A, the metal filler 3, the first electrode structure 4 and the light-emitting unit 10.
The preparation process is shown in figure 2 and comprises the following steps:
s101, providing a supporting substrate. As shown in FIG. 3, the supporting substrate 1 of the present embodiment has good insulating property, and the supporting substrate 1 may be silicon dioxide SiO 2 Aluminum oxide Al 2 O 3 、Ti 2 O 3 The inorganic material may be an organic material such as epoxy resin, and the thickness thereof is 100 to 300. Mu.m, preferably 130 to 250. Mu.m, more preferably 150 to 170. Mu.m.
And S102, penetrating through the through hole from the surface A to the surface B of the support substrate. As shown in fig. 4, the through holes 2 are required to completely penetrate from the surface a to the surface B, the number of the through holes 2 is plural, the shape of the through holes can be circular, elliptical or polygonal, and when the through holes are circular, the diameter thereof is required to be 5-50 μm, preferably 10-40 μm, and more preferably 20-30 μm; when it is elliptical, it is required that the major and minor axes thereof are 10 to 60 μm and 5 to 50 μm, preferably 20 to 50 μm and 10 to 40 μm, more preferably 30 to 40 μm and 20 to 30 μm, respectively; when it is polygonal, it is required that the circumscribed circle and the inscribed circle have diameters of 10 to 60 μm and 5 to 50 μm, preferably 20 to 50 μm and 10 to 40 μm, more preferably 30 to 40 μm and 20 to 30 μm, respectively.
And S103, filling metal filler into the through hole. As shown in fig. 5, the metal filler 3 is required to have good electrical and thermal conductivity and completely fill the through hole 2. The metal filler 3 comprises a bonding layer and a conductive layer, wherein the bonding layer is filled in the through hole 2 and on the surface of A/B, and can be made of metal materials such as Ti, pt, cu, ni, al, cr, sn, au and the like or laminated materials thereof, and the thickness of the bonding layer is 10-200nm; the conductive layer is located outside the adhesive layer, and may be a metal material such as Cu, in, au, or Sn, or a stacked material thereof. After the preparation of the conductive layer is completed, the whole metal filler 3 protrudes from the surface A and the surface B, and the heights of the protruding surface A and the protruding surface B are both required to be < =5 μm.
S104, manufacturing a plurality of first electrode structures on the surface of the supporting substrate A. As shown in fig. 6, the first electrode structure 4 is located above the surface of the support substrate a. As shown in fig. 7, the first electrode structure 4 in this embodiment includes three subgroups, each subgroup includes a positive electrode, a negative electrode, a bridging electrode and a contact electrode, the positive electrode and the negative electrode in the same subgroup are oppositely arranged with a distance of 10-150 μm, preferably 20-100 μm, and more preferably 40-70 μm, and the material thereof may be a metal material such as Ti, pt, cu, ni, al, cr, sn, au, or a stacked material thereof, and the thickness is 5-100nm. The anodes (or cathodes) of the three subgroups are connected together by bridging electrodes, which may be metal connecting lines, and then commonly connected to the metal filler in one through hole; the cathodes (or anodes) of the three subgroups are respectively connected to the metal fillers in the other three different through holes through contact electrodes, the contact electrodes are made of metal materials, the connection between the electrodes and the metal fillers is realized, and at the moment, the first electrode structures 4 are respectively electrically connected with the metal fillers of the 4 through holes.
And S105, manufacturing a plurality of second electrode structures on the surface of the support substrate B. As shown in fig. 8, the second electrode structure 8 is located on the surface of the support substrate B. As shown in fig. 9, the second electrode structure 8 in this embodiment includes four sub-electrode groups Pad1, pad2, pad3 and Pad4, the four sub-electrode groups are arranged at four corners and spaced apart from each other by 10-500 μm, preferably 40-400 μm, and more preferably 80-200 μm, and the material thereof may be a metal material such as Ti, pt, cu, ni, al, cr, sn, au, or a stacked material thereof, and has a thickness of 5-100nm. Each sub-electrode group comprises an electrode, a bridging electrode and a contact electrode; the four sub-electrode groups are respectively in one-to-one correspondence with the 4 through holes connected with the first electrode structure 4, and the electrodes of each sub-electrode group are electrically connected with the metal fillers in the corresponding through holes through the bridging electrodes and the contact electrodes, so that the electrodes are electrically connected with the positive/negative electrodes on the surface A.
And S106, bonding the light-emitting unit on the first electrode structure. As shown in fig. 10, each of the light emitting cells 10 is bonded to the first electrode structure 4. As shown in fig. 11, in the present embodiment, the light emitting unit 10 is an LED flip chip, the light emitting unit 10 includes 3 light emitting sub-units, each light emitting sub-unit corresponds to each sub-group, each light emitting sub-unit includes a light emitting structure 8 and an electrode structure 7, the electrode unit 7 includes an anode and a cathode, and the anode and the cathode of the electrode unit form a bonding layer 6 with the anode and the cathode of the first electrode structure 4 by bonding, respectively, and are connected together. After the positive electrodes and the negative electrodes of the 3 luminous subunits are electrified, blue light, red light and green light are respectively emitted.
And S107, coating a protective film. As shown in fig. 12, a transparent coating film is applied on the surface of the supporting substrate a, the metal filler 3, the first electrode structure 4 and the light emitting unit 10 to form a protective film 9, and further a wafer coated with the protective film is formed. In this embodiment, the thickness of the protective film 9 is 2 to 20 μm, preferably 5 to 15 μm, and more preferably 7 to 10 μm; the material can be organic materials such as epoxy resin and the like, and the light transmittance of the material is > =95 at a wave band of 400-800 nm.
And S108, cutting the wafer to form the independent LED chip. In the preparation process, the first electrode structures, the second electrode structures and the light-emitting units are in one-to-one correspondence, so that the whole wafer structure coated with the protective film is cut according to the correspondence to form a plurality of independent LED chips, and each chip comprises one light-emitting unit, the first electrode structures, the second points and the structures. As shown in fig. 13, the circular area is an entire wafer structure, and the square frame is an independent LED chip corresponding to one light emitting unit.
Example 2
Reference numerals in example 2: the manufacturing method comprises the steps of 1-supporting a substrate, 2-through holes, 3-an oxide film layer, 4-metal fillers, 5-a first electrode structure, 6-a second electrode structure, 7-a bonding layer, 8-an electrode structure of a light-emitting unit, 9-a light-emitting structure of the light-emitting unit, 10-the light-emitting unit and 11-a transparent coating film.
The micro-integrated LED chip prepared in this embodiment is shown in fig. 14, and includes: the light-emitting device comprises a supporting substrate 1, a through hole 2 penetrating through the surface of the supporting substrate A to the surface of the supporting substrate B, an oxide film layer 3 formed by oxidizing the surface of the supporting substrate A, the surface of the supporting substrate B and the surface of the through hole, a metal filler 4 filled in the through hole, a first electrode structure 5 positioned on the surface of the supporting substrate A, a second electrode structure 6 positioned on the surface of the supporting substrate B, a light-emitting unit 10 positioned on the first electrode structure 5 and a transparent coating film 11 coating the surface of the supporting substrate A, the metal filler 4, the first electrode structure 5 and the light-emitting unit 10.
The flow of this embodiment for preparing a micro-integrated LED chip is shown in fig. 15, and includes the following steps:
s201, providing a supporting substrate. As shown in fig. 16, the supporting substrate 1 is an insulating material substrate or a non-insulating material substrate, and the non-insulating material substrate includes a bulk material and a surface insulating protective film layer. The support substrate 1 in this embodiment is a semiconductor material, such as Si, with a thickness of 100-300 μm, preferably 130-250 μm, more preferably 150-170 μm.
And S202, penetrating through the through hole from the surface A to the surface B of the support substrate. As shown in fig. 17, the shape of the through-hole 2 may be circular, elliptical, polygonal, or the like, as in embodiment 1.
And S203, oxidizing. As shown in FIG. 18, the surface of the support substrate A, the surface of the support substrate B, and the surface of the through-hole 2 are oxidized to form an oxide film layer 3, which is required to completely cover the surface of the support substrate A/B and the surface of the through-hole and can be formed by wet or dry oxidation to a thickness of 0.5-5 μm, preferably 1-4 μm, and more preferably 2-3 μm.
And S204, filling metal filler into the through hole. As shown in fig. 19, the metal filler 4 is required to have good electrical and thermal conductivity and to be completely filled in the through-hole 2, as in embodiment 1.
S205, a first electrode structure is manufactured on the surface of the supporting substrate A. As shown in fig. 20, the first electrode structure 5 is located on the surface of the supporting substrate a, as in embodiment 1. In a specific implementation, the first electrode structure 5 comprises a plurality of subgroups, and the number of subgroups is set according to actual conditions, but the number of subgroups is ensured to be greater than 2.
S206, manufacturing a second electrode structure on the surface of the supporting substrate B. As shown in fig. 21, the second electrode structure 6 is located on the surface of the supporting substrate B, as in embodiment 1. In a specific implementation process, the second electrode structure 6 includes a plurality of sub-electrode sets, and the number of the sub-electrode sets is set according to actual conditions, but the number of the sub-electrode sets is ensured to be greater than 3.
S207, bonding the light emitting unit on the first electrode structure. As shown in fig. 22, the light emitting unit 10 is located on the first electrode structure 5, as in embodiment 1. In a specific implementation process, the number of the light-emitting subunits in the light-emitting unit is multiple, and the specific number is set according to an actual situation, but it is required to ensure that the number of the blue light-emitting subunit, the red light-emitting subunit and the green light-emitting subunit is at least one.
And S208, coating a transparent coating film. As shown in fig. 23, the transparent cover film 11 covers the surface of the supporting substrate a, the metal filler 3, the electrode structure 4 and the light emitting unit 10. As in example 1, the material of the transparent cover film 11 may be an organic material such as epoxy resin.
And S209, cutting to form independent LED chips. And cutting the whole wafer structure coated with the transparent coating film to form a plurality of independent LED chips, wherein each LED chip is provided with an independent light-emitting unit.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principle and the embodiment of the present invention are explained by applying specific examples, and the above description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the foregoing, the description is not to be taken in a limiting sense.
Claims (10)
1. A micro-integrated LED chip, comprising:
a support substrate comprising opposing first and second surfaces;
a plurality of through holes penetrating from the first surface to the second surface of the support substrate;
the metal filler is filled in the through hole;
a first electrode structure on the first surface and electrically connected to the metal fill;
the light-emitting unit is positioned on the first electrode structure and is electrically connected with the first electrode structure;
a second electrode structure on the second surface and electrically connected to the metal filler;
and the protective film covers the first surface of the support substrate and covers the first electrode structure and the light-emitting unit.
2. A micro-integrated LED chip according to claim 1, wherein the metal filler has a filling height greater than the height of the via hole, and both of the metal fillers protrude from the first surface and the second surface;
the metal filler comprises an adhesive layer and a conductive layer; the bonding layer is filled in the through hole, and the conducting layer is located outside the bonding layer and protrudes out of the first surface and the second surface.
3. A micro-integrated LED chip according to claim 2, wherein the height of the metal filler protruding from the first surface and protruding from the second surface is no more than 5 μ ι η.
4. A micro-integrated LED chip according to claim 1, wherein the first electrode structure comprises m sub-groups, each sub-group comprising a first electrode and a second electrode, the first and second electrodes being electrodes of opposite polarity, m being an integer greater than 2; the number of the through holes is at least m + 1;
the m first electrodes of the m subgroups are commonly connected to metal fillers in first through holes, and the m second electrodes of the m subgroups are respectively connected to the metal fillers in the m through holes different from the first through holes in a one-to-one correspondence manner.
5. The micro-integrated LED chip of claim 4, wherein each of said subsets further comprises a bridge electrode and a contact electrode; the first electrodes of each subgroup are connected to the corresponding metal fillers through the bridging electrodes of the same subgroup, and the m bridging electrodes of the m subgroups are electrically connected with each other; the second electrode of each subgroup is connected to the corresponding metal filling through the contact electrode of the same subgroup.
6. A micro-integrated LED chip according to claim 4, wherein the second electrode structure comprises m +1 sub-electrode groups, each of the sub-electrode groups comprises one electrode, and m +1 electrodes of the m +1 sub-electrode groups are respectively connected to the metal fillers of the m +1 through holes corresponding to the first electrode structure in a one-to-one correspondence manner.
7. A micro-integrated LED chip according to claim 6, wherein the m +1 sub-electrode sets are respectively located at m +1 corners of the m +1 polygon, and the distance between the sub-electrode sets at two adjacent corner positions is 10 μm-500 μm.
8. A micro-integrated LED chip according to claim 6, wherein each of the sub-electrode sets further comprises a bridge electrode and a contact electrode, the electrodes of each sub-electrode set being connected to the corresponding metal filler through the bridge electrode and the contact electrode of the same sub-electrode set.
9. A micro-integrated LED chip according to claim 4, wherein the light emitting unit comprises m light emitting sub-units, each light emitting sub-unit comprising a light emitting structure, a first electrode connected to the light emitting structure and a second electrode connected to the light emitting structure; the m first electrodes of the m light-emitting subunits are connected with the m first electrodes of the first electrode structure in a bonding manner, and the m second electrodes of the m light-emitting subunits are respectively connected with the m second electrodes of the first electrode structure in a one-to-one correspondence manner in a bonding manner;
the m luminous subunits are respectively a blue light luminous subunit, a red light luminous subunit and a green light luminous subunit, and the number of the blue light luminous subunit, the red light luminous subunit and the green light luminous subunit is at least one.
10. A method for preparing a micro-integrated LED chip, wherein the method for preparing a micro-integrated LED chip is used for preparing the micro-integrated LED chip according to any one of claims 1 to 9, and the method for preparing a micro-integrated LED chip comprises:
preparing a support substrate; the support substrate comprises a first surface and a second surface;
preparing a plurality of through holes penetrating through the first surface and the second surface of the support substrate;
filling metal fillers in each through hole;
manufacturing a first electrode structure on the first surface of the supporting substrate, and electrically connecting the first electrode structure with the metal filler;
manufacturing a second electrode structure on the second surface of the supporting substrate, and electrically connecting the second electrode structure with the metal filler;
placing a light emitting unit on the first electrode structure, and connecting the light emitting unit and the first electrode structure in a bonding mode;
coating a protective film on the first surface of the supporting substrate, and coating the first electrode structure and the light-emitting unit to form a wafer coated with the protective film;
cutting the wafer coated with the protective film to form an independent LED chip; each LED chip includes one of the light emitting units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110660340.7A CN115483338A (en) | 2021-06-15 | 2021-06-15 | Micro-integrated LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110660340.7A CN115483338A (en) | 2021-06-15 | 2021-06-15 | Micro-integrated LED chip and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116960244A (en) * | 2023-09-20 | 2023-10-27 | 昆山麦沄显示技术有限公司 | Integrated LED chip structure and manufacturing method |
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| CN111103724A (en) * | 2018-10-26 | 2020-05-05 | 佛山市国星光电股份有限公司 | LED backlight module, display screen and LED backlight module detection method |
| US20200152845A1 (en) * | 2018-11-09 | 2020-05-14 | Samsung Electronics Co., Ltd. | Mounting structure for mounting micro led |
| CN111987082A (en) * | 2019-05-21 | 2020-11-24 | 光宝光电(常州)有限公司 | LED packaging structure |
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| JP2011125874A (en) * | 2009-12-15 | 2011-06-30 | Daido Steel Co Ltd | Method of producing welding wire |
| CN207425855U (en) * | 2017-08-22 | 2018-05-29 | 山东晶泰星光电科技有限公司 | A kind of 8 pin-type RGB-LED encapsulation modules of tetrad and its display screen |
| CN111103724A (en) * | 2018-10-26 | 2020-05-05 | 佛山市国星光电股份有限公司 | LED backlight module, display screen and LED backlight module detection method |
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| CN116960244A (en) * | 2023-09-20 | 2023-10-27 | 昆山麦沄显示技术有限公司 | Integrated LED chip structure and manufacturing method |
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