CN116960244A - Integrated LED chip structure and manufacturing method - Google Patents
Integrated LED chip structure and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 315
- 238000001259 photo etching Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000007769 metal material Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000002648 laminated material Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 13
- 238000009413 insulation Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Abstract
The application discloses an integrated LED chip structure and a manufacturing method thereof, comprising a growth substrate; an epitaxial structure is arranged on the growth substrate, and the epitaxial structure sequentially comprises a negative polarity layer, a quantum well luminescent layer and a positive polarity layer from bottom to top; a transparent conductive layer is arranged on the positive polarity layer of the epitaxial structure; a first insulating layer is arranged on the transparent conductive layer, the negative polarity layer of the epitaxial structure and the growth substrate; the first expansion electrode, the reflecting insulating layer, the second expansion electrode, the Micro LED chip, the second insulating layer and the bonding wire electrode are sequentially arranged; the application well solves the problems of large occupied area of pixel points and influence on display effect in the prior art by redesigning and laying out the chip structure and providing corresponding manufacturing process and method, simplifies the manufacturing process, solves the problem of chip isolation, improves the reliability of products, improves the production efficiency, meets the production requirements of enterprises, and improves the competitiveness of the enterprises.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an integrated LED chip structure and a manufacturing method thereof.
Background
People have been away from electronic screens, and increasingly require higher resolution, higher contrast, and more gorgeous screen images in order to approximate a real visual experience. The screen technology is upgraded for about every 6-8 years, so that the ultra-high definition visual era is reached at present, the industrial and informationized department of China mainly and jointly issues the ultra-high definition video industry development action plan in 3 months of 2019, the development of the ultra-high definition video industry of China is comprehensively planned, and the scale of related matched industry chains is expected to be driven to exceed 4 trillion, wherein Mini/Micro LEDs serving as display equipment technology are expected to bring forth the ultra-high definition market.
The chip size of the Mini LED is generally between 80 and 200um, and the Mini LED technology serving as the next generation display technology breaks through the technical bottleneck in the last two years, is rapidly developed, and gradually enters the fields of indoor high-end display, conference integrated machines, vehicle-mounted illumination and the like. Micro LEDs are LED chips with a smaller chip size than Mini LEDs, which are generally smaller than 50um in size, are considered to be the most likely replacement of OLEDs, and become the next generation LED display technology, and compared with Mini LEDs, because of their small size, the pitch can be less than P0.4, which is widely used in devices and places where higher brightness, ultra-high resolution, and higher color saturation are required. Although Micro LEDs have many advantages over Mini LEDs, there are still many technical challenges that need to be addressed, among which are manufacturing costs, testing and rework issues. In order to solve the above problem of Micro LED chips, a new small-size LED display technology is currently emerging, namely MIP (Micro chip is transferred to a package body through a package form to form a single pixel), which has the advantages that the pixel can be made very small, and the pain point that Micro LED cannot be tested is solved. MIP technology, usually transfer red, green, blue single-color Micro LED chip to the base plate through the way of transferring, then seal the glue, cut, form a single encapsulation body, usually, red, green, blue single-color chip adopts the way of horizontal arrangement or lamination arrangement, if adopt the horizontal way, the whole pixel point occupies a relatively large area, influence the display effect; if a vertical mode is adopted, the manufacturing process is complex, and isolation is needed between chips, isolation problems can occur, and the reliability of the product is invalid.
In order to solve the problems, a novel integrated LED chip structure and a manufacturing method thereof are developed and designed.
Disclosure of Invention
The application aims to provide an integrated LED chip structure and a manufacturing method thereof, which are used for solving the problems of the traditional MIP technology.
In order to solve the technical problems, the application adopts the following technical scheme:
an integrated LED chip structure comprising:
a growth substrate;
an epitaxial structure is arranged on the growth substrate, and the epitaxial structure sequentially comprises a negative polarity layer, a quantum well luminescent layer and a positive polarity layer from bottom to top;
a transparent conductive layer is arranged on the positive polarity layer of the epitaxial structure;
a first insulating layer is arranged on the transparent conductive layer, the negative polarity layer of the epitaxial structure and the growth substrate;
a first expansion electrode is arranged on the first insulating layer, the transparent conducting layer and the negative polarity layer of the epitaxial structure;
a reflective insulating layer is arranged on the first expansion electrode, the first insulating layer, the transparent conducting layer and the negative polarity layer of the epitaxial structure;
a second expansion electrode is arranged on the reflective insulating layer, the first insulating layer and the first expansion electrode;
a Micro LED chip is arranged on the second extension electrode;
a second insulating layer is arranged on the reflecting insulating layer, the second expansion electrode, the first insulating layer and the Micro LED chip;
and bonding wire electrodes are arranged on the second insulating layer, the second expansion electrode and the first expansion electrode.
Preferably, the growth substrate is a sapphire substrate, and the thickness of the sapphire substrate is 80-200um.
Preferably, the epitaxial structure is a blue epitaxial structure or a green epitaxial structure.
Preferably, when the epitaxial structure is a blue light epitaxial structure, the Micro LED chips are respectively a green light Micro LED chip and a red light Micro LED chip; when the epitaxial structure is a green light epitaxial structure, the Micro LED chips are respectively a blue light Micro LED chip and a red light Micro LED chip.
Preferably, the transparent conductive layer is made of ITO or IZO, and has a thickness of 50-200nm.
Preferably, the first extension electrode includes a negative extension electrode and a positive extension electrode, wherein the positive extension electrode is interconnected with the transparent conductive layer, and the negative extension electrode is interconnected with the negative layer of the epitaxial structure.
Preferably, the first insulating layer is made of inorganic material or organic material, and the thickness of the first insulating layer is 50-200nm; a first insulating layer window is arranged from the top surface of the first insulating layer to the surface of the transparent conducting layer and the negative polarity layer of the epitaxial structure in a penetrating way, so that the transparent conducting layer and the epitaxial structure are partially exposed; the first insulating layer window is in one of a round shape, an oval shape, a square shape and a diamond shape.
Preferably, the reflective insulation layer is made of a multi-layered laminate material having a thickness of 1-5um.
Preferably, a reflective insulating layer window is formed from the top surface of the reflective insulating layer to the surface of the first expansion electrode and the first insulating layer, and the reflective insulating layer window is one of a circle, an ellipse, a square or a diamond.
Preferably, the second expansion electrode is divided into three areas, namely an area one, an area two and an area three, wherein the second expansion electrode of the area three is interconnected with the first expansion electrode through the first insulating layer window.
Preferably, the Micro LED chip comprises a bonding layer and an epitaxial layer, wherein the bonding layer is connected with the second expansion electrode in a eutectic bonding mode.
In a preferred scheme, the negative electrode of the Micro LED chip is interconnected with the second expansion electrode of the region III, and the positive electrode of the Micro LED chip is respectively interconnected with the second expansion electrodes of the region I and the region II.
Preferably, the negative electrode of the Micro LED chip is respectively interconnected with the second expansion electrodes of the first area and the second area, and the positive electrode of the Micro LED chip is interconnected with the second expansion electrode of the third area.
Preferably, the second insulating layer is made of an organic insulating material or an inorganic insulating material; a second insulating layer window is formed from the top surface of the second insulating layer to the surfaces of the second expansion electrode and the first expansion electrode in a penetrating way, so that the second expansion electrode and the first expansion electrode are partially exposed; the shape of the second insulating layer window is one of round, oval, square or diamond.
Preferably, the bonding wire electrode is interconnected with the second extension electrode and the first extension electrode through the second insulating layer window.
Preferably, the bonding wire electrode comprises a bonding layer, a reflecting layer, a blocking layer and a bonding layer from bottom to top in sequence; the bonding layer is made of a metal material or other laminated materials, and the thickness is 2-10nm; the reflecting layer is positioned on the bonding layer and is made of a metal material or other laminated materials, and the thickness of the reflecting layer is 10-200nm; the barrier layer is positioned on the reflecting layer and made of a metal material or other laminated materials, and the thickness of the barrier layer is 50-500nm; the bonding layer is positioned on the barrier layer and is made of metal materials or other alloys, and the thickness of the bonding layer is 0.1-20um.
In addition, the application also provides a manufacturing method of the integrated LED chip, which comprises the following steps:
s1, providing a growth substrate;
s2, manufacturing a blue light or green light epitaxial structure on the growth substrate;
s3, removing the positive polarity layer and the quantum well luminescent layer of the partial region epitaxial structure by means of photoetching, etching and photoresist removal to expose the negative polarity layer;
s4, removing the positive polarity layer, the quantum well light-emitting layer and the negative polarity layer of the partial region epitaxial structure in a photoetching, etching and photoresist removing mode to expose the growth substrate;
s5, manufacturing a transparent conductive layer on the positive polarity layer of the epitaxial structure in a deposition, photoetching, etching and photoresist removing mode;
s6, manufacturing a first insulating layer on the transparent conductive layer and the epitaxial structure in a deposition, photoetching, etching and photoresist removing mode, manufacturing a first insulating layer window, and exposing negative polarity layers of the transparent conductive layer and the epitaxial structure;
s7, manufacturing a first expansion electrode on the first insulating layer, the negative electrode layer of the epitaxial structure and the transparent conductive layer in a photoetching, vapor plating and photoresist removing mode, wherein the first expansion electrode is interconnected with the transparent conductive layer and the negative electrode layer of the epitaxial structure through a first insulating layer window;
s8, manufacturing a reflective insulating layer on the first insulating layer, the first extension electrode, the transparent conducting layer and the negative electrode layer of the epitaxial structure in a deposition mode, removing part of the reflective insulating layer on the first extension electrode and the first insulating layer in a photoetching, etching and photoresist removing mode, and manufacturing a reflective insulating layer window;
s9, manufacturing a second expansion electrode on the reflective insulating layer, the first insulating layer and the first expansion electrode in a photoetching, evaporation and photoresist removing mode, wherein the second expansion electrode is interconnected with the first expansion electrode through a window of the reflective insulating layer;
s10, transferring the Micro LED chip onto the second expansion electrode in a transfer mode, and then interconnecting the Micro LED chip and the second expansion electrode in a eutectic bonding mode;
s11, manufacturing a second insulating layer on the second expansion electrode, the Micro LED chip, the insulating reflecting layer and the first insulating layer in a deposition mode, and then removing part of the second expansion electrode, the second insulating layer and the reflecting insulating layer on the first expansion electrode in a photoetching, etching and photoresist removing mode to manufacture a second insulating layer window;
s12, manufacturing bonding wire electrodes on the second insulating layer, the first expansion electrode at the window of the second insulating layer and the second expansion electrode in a photoetching, vapor plating and photoresist removing mode;
s13, grinding and cutting to form a single integrated LED chip structure.
Due to the application of the technical scheme, the application has the following beneficial effects compared with the prior art:
according to the integrated LED chip structure and the manufacturing method, the problems that the occupied area of pixel points is large and the display effect is affected in the prior art are well solved through redesigning and layout of the chip structure and providing corresponding manufacturing processes and methods, meanwhile, the manufacturing process is simplified, the chip isolation problem is solved, the reliability of products is improved, the production efficiency is improved, the production requirements of enterprises are met, and the competitiveness of the enterprises is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an integrated LED chip structure according to the present application;
FIG. 2 is a flow chart of a method for fabricating an integrated LED chip according to the present application;
FIG. 3 is a schematic diagram of a chip structure of step S1 in the manufacturing method of the present application;
FIG. 4 is a schematic diagram of a chip structure in step S2 of the manufacturing method of the present application;
FIG. 5 is a schematic diagram of a chip structure in step S3 of the manufacturing method of the present application;
FIG. 6 is a schematic diagram of a chip structure in step S4 in the manufacturing method of the present application;
FIG. 7 is a schematic diagram of a chip structure in step S5 of the manufacturing method of the present application;
FIG. 8 is a schematic diagram of a chip structure in step S6 in the manufacturing method of the present application;
FIG. 9 is a schematic diagram of a chip structure of step S7 in the manufacturing method of the present application;
FIG. 10 is a schematic diagram of a chip structure of step S8 in the manufacturing method of the present application;
FIG. 11 is a schematic diagram of a chip structure in step S9 in the manufacturing method of the present application;
FIG. 12 is a schematic diagram of a chip structure of step S10 in the manufacturing method of the present application;
FIG. 13 is a schematic diagram of a chip structure of step S11 in the manufacturing method of the present application;
FIG. 14 is a schematic diagram of a chip structure of step S12 in the manufacturing method of the present application;
1, a growth substrate; 2. an epitaxial structure; 3. a transparent conductive layer; 4. a first insulating layer; 4-1, a first insulating layer window; 5. a first extension electrode; 6. a reflective insulating layer; 6-1, a reflective insulation layer window; 7. a second extension electrode; 8. micro LED chip; 9. a second insulating layer; 9-1, a second insulating layer window; 10. and (3) bonding wire electrodes.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the application herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate an azimuth or a positional relationship based on that shown in the drawings. These terms are only used to better describe the present application and its embodiments and are not intended to limit the scope of the indicated devices, elements or components to the particular orientations or to configure and operate in the particular orientations.
Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in the present application will be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "mounted," "configured," "provided," "connected," "coupled," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
Example 1
Referring to fig. 1, the present application provides an integrated LED chip structure, which includes:
a growth substrate 1; the growth substrate 1 is a sapphire substrate having a thickness of 80 to 200um, preferably 100 to 180um, and even more preferably 120 to 150um.
An epitaxial structure 2 is arranged on the growth substrate 1, and the epitaxial structure 2 sequentially comprises a negative polarity layer, a quantum well light-emitting layer and a positive polarity layer from bottom to top; the epitaxial structure 2 is a blue light epitaxial structure or a green light epitaxial structure, and when the epitaxial structure 2 is a blue light epitaxial structure, the Micro LED chips 8 are respectively a green light Micro LED chip and a red light Micro LED chip; when the epitaxial structure 2 is a green light epitaxial structure, the Micro LED chips 8 are blue light Micro LED chips and red light Micro LED chips, respectively.
A transparent conductive layer 3 is arranged on the positive polarity layer of the epitaxial structure 2; the transparent conductive layer 3 is made of ITO or IZO, and the thickness of the transparent conductive layer is 50-200nm; the preferred thickness is 80-150um, and the even more preferred thickness is 100-120um.
A first insulating layer 4 is arranged on the transparent conductive layer 3, the negative polarity layer of the epitaxial structure 2 and the growth substrate 1; the first insulating layer 4 is made of inorganic material or organic material, such as SiO 2 Or MgF having a thickness of 50 to 200nm, preferably 80 to 150um, and even more preferably 100 to 120um; a first insulating layer window 4-1 is arranged from the top surface of the first insulating layer 4 to the surface of the transparent conducting layer 3 and the negative polarity layer of the epitaxial structure 2, so that the transparent conducting layer 3 and the epitaxial structure 2 are partially exposed; the first insulating layer window 4-1 has one of a circular shape, an oval shape, a square shape, and a diamond shape, and the pore size thereof is required to gradually increase from the bottom surface to the top surface.
A first extension electrode 5 is arranged on the first insulating layer 4, the transparent conducting layer 3 and the negative polarity layer of the epitaxial structure 2; the first extension electrode 5 comprises a negative polarity extension electrode and a positive polarity extension electrode, wherein the positive polarity extension electrode is interconnected with the transparent conductive layer 3, and the negative polarity extension electrode is interconnected with the negative polarity layer of the epitaxial structure 2; the first extension electrode 5 is required to have good conductivity, and comprises an ohmic contact bonding layer, a reflecting layer, a barrier layer and a bonding layer from bottom to top, wherein the ohmic contact bonding layer can be a metal material such as Ti, ni, cr or a lamination material thereof, and the thickness is 2-10nm; the reflecting layer is positioned on the bonding layer and can be made of metal materials such as Al, ag, pt and the like or laminated materials thereof, and the thickness is 10-200nm; the barrier layer is positioned on the reflecting layer and can be a metal material such as Pt, ti, ni, W, zr or a laminated material thereof, and the thickness is 50-200nm; the adhesive layer is located on the barrier layer and can be Ti, ni, cr or other metal materials or alloys thereof, and the thickness is 50-200nm.
Located at the first extension electrode 5, the first insulating layer 4, the transparent conductive layer 3 and the epitaxial junctionA reflective insulating layer 6 is arranged on the negative electrode layer of the structure 2; the reflective insulation layer 6 is made of a multi-layer laminated material, and the thickness of the reflective insulation layer is 1-5um; it is desirable to have good insulating and reflective properties, typically a multilayer laminate, such as a high refractive index/low refractive index multilayer laminate, such as SiO 2 /Ta 2 O 5 、MgF/T 2 O 5 、SiO 2 /HfO 2 And so on; a reflective insulating layer window 6-1 is provided from the top surface of the reflective insulating layer 6 to the surface of the first extension electrode 5 and the first insulating layer 4, and is one of circular, elliptical, square or diamond, the size of the bottom surface is required to be smaller than the corresponding size of the first extension electrode 5, the width between the two is 2-20um, the preferred width is 4-15um, the even more preferred width is 6-10um, and the pore size is required to gradually increase from the bottom surface to the top surface.
A second expansion electrode 7 is arranged above the reflective insulation layer 6, the first insulation layer 4 and the first expansion electrode 5; the second extension electrode 7 is divided into three areas, namely a first area, a second area and a third area, wherein the second extension electrode 7 of the third area is interconnected with the first extension electrode 5 through a first insulation layer window 4-1, and the specific second extension electrode 7 of the third area is interconnected with the negative extension electrode of the first extension electrode 5 through a reflection insulation layer window 6-1; the second expansion electrode 7 is required to have good conductive performance, and comprises an ohmic contact bonding layer, a reflecting layer, a barrier layer and a bonding layer from bottom to top, wherein the ohmic contact bonding layer can be a metal material such as Ti, ni, cr and the like or a lamination material thereof, and the thickness is 2-10nm; the reflecting layer is positioned on the bonding layer and can be made of metal materials such as Al, ag, pt and the like or laminated materials thereof, and the thickness is 10-200nm; the barrier layer is positioned on the reflecting layer and can be a metal material such as Pt, ti, ni, W, zr or a laminated material thereof, and the thickness is 50-200nm; the adhesive layer is located on the barrier layer and can be Ti, ni, cr or other metal materials or alloys thereof, and the thickness is 50-200nm.
A Micro LED chip 8 is arranged above the second extension electrode 7; the Micro LED chip 8 comprises a bonding layer and an epitaxial layer, wherein the bonding layer is interconnected with the second expansion electrode 7 in a eutectic bonding mode; the Micro LED chip 8 is a blue light Micro LED chip, a green light Micro LED chip or a red light Micro LED chip, if the epitaxial structure 2 on the growth substrate 1 is a blue light epitaxial structure, the Mirco LED chip is a green light Micro LED chip and a red light Micro LED chip respectively; if the epitaxial structure 2 above the growth substrate 1 is a green light epitaxial structure, the Mirco LED chips are respectively a blue light Micro LED chip and a red light Micro LED chip; the method specifically comprises two cases, wherein one case is that the negative electrode of the Micro LED chip 8 is interconnected with the second expansion electrode 7 of the region III, and the positive electrode of the Micro LED chip 8 is respectively interconnected with the second expansion electrodes 7 of the region I and the region II; in another case, the negative electrode of the Micro LED chip 8 is respectively connected with the second expansion electrodes 7 of the first and second regions, and the positive electrode of the Micro LED chip 8 is connected with the second expansion electrode 7 of the third region.
A second insulating layer 9 is arranged on the reflecting insulating layer 6, the second expansion electrode 7, the first insulating layer 4 and the Micro LED chip 8; the second insulating layer 9 is made of organic insulating material or inorganic insulating material such as SiO 2 、TiO 2 BCB; a second insulating layer window 9-1 is arranged from the top surface of the second insulating layer 9 to the surfaces of the second expansion electrode 7 and the first expansion electrode 5 in a penetrating way, so that the second expansion electrode 7 and the first expansion electrode 5 are partially exposed; the second insulating layer window 9-1 is one of a circle, an ellipse, a square or a diamond, the size of the bottom surface is required to be smaller than the corresponding sizes of the second expansion electrode 7 and the first expansion electrode 5, the width between the two is 2-20um, the preferred width is 4-15um, the even more preferred width is 6-10um, and the pore size is required to gradually increase from the bottom surface to the top surface.
A bonding wire electrode 10 is arranged on the second insulating layer 9, the second extension electrode 7 and the first extension electrode 5; the bonding wire electrode 10 is interconnected with the second extension electrode 7 and the first extension electrode 5 through a second insulating layer window 9-1, and sequentially comprises a bonding layer, a reflecting layer, a barrier layer and a bonding layer from bottom to top, wherein the bonding layer can be a metal material such as Ti, ni, cr or a lamination material thereof, and the thickness is 2-10nm; the reflecting layer is positioned on the bonding layer and can be made of metal materials such as Al, ag, pt and the like or laminated materials thereof, and the thickness is 10-200nm; the barrier layer is positioned on the reflecting layer and can be a metal material such as Pt, ti, ni, W, zr or a laminated material thereof, and the thickness of the barrier layer is 50-500nm; the bonding layer is positioned on the barrier layer and can be a metal material such as Au, ag, sn, in, cu or an alloy thereof, and the thickness is 0.1-20um.
Example two
Referring to fig. 2-14, the present application further provides a method for manufacturing an integrated LED chip, which includes the following steps:
s1, providing a growth substrate 1, wherein the growth substrate 1 is made of sapphire material;
s2, manufacturing an epitaxial structure 2 on the growth substrate 1, wherein the epitaxial structure 2 is a blue light epitaxial structure or a green light epitaxial structure;
s3, removing the positive polarity layer and the quantum well luminescent layer of the partial region epitaxial structure 2 by means of photoetching, etching and photoresist removal to expose the negative polarity layer;
s4, removing the positive polarity layer, the quantum well luminescent layer and the negative polarity layer of the partial region epitaxial structure 2 by means of photoetching, etching and photoresist removing to expose the growth substrate 1;
s5, manufacturing a transparent conductive layer 3 on the positive polarity layer of the epitaxial structure 2 by means of deposition, photoetching, etching and photoresist removal;
s6, manufacturing a first insulating layer 4 on the transparent conductive layer 3 and the epitaxial structure 2 in a deposition, photoetching, etching and photoresist removing mode, manufacturing a first insulating layer window 4-1, and exposing negative polarity layers of the transparent conductive layer 3 and the epitaxial structure 2;
s7, manufacturing a first extension electrode 5 on the first insulating layer 4, the negative polarity layer of the epitaxial structure 2 and the transparent conductive layer 3 in a photoetching, evaporation and photoresist removing mode, wherein the first extension electrode is interconnected with the transparent conductive layer 3 and the negative polarity layer of the epitaxial structure 2 through a first insulating layer window 4-1;
s8, manufacturing a reflective insulating layer 6 on the first insulating layer 4, the first extension electrode 5, the transparent conducting layer 3 and the negative polarity layer of the epitaxial structure 2 in a deposition mode, and then removing part of the first extension electrode 5 and the reflective insulating layer 6 on the first insulating layer 4 in a photoetching, etching and photoresist removing mode to manufacture a reflective insulating layer window 6-1;
s9, manufacturing a second expansion electrode 7 on the reflective insulation layer 6, the first insulation layer 4 and the first expansion electrode 5 in a photoetching, evaporation and photoresist removing mode, wherein the second expansion electrode 7 is connected with the first expansion electrode 5 through a reflective insulation layer window 6-1;
s10, transferring the Micro LED chip 8 onto the second expansion electrode 7 in a transfer mode, and then interconnecting the Micro LED chip 8 and the second expansion electrode 7 in a eutectic bonding mode;
s11, manufacturing a second insulating layer 9 on the second expansion electrode 7, the Micro LED chip 8, the insulating reflecting layer and the first insulating layer 4 in a deposition mode, and then removing part of the second insulating layer 9 and the reflecting insulating layer 6 on the second expansion electrode 7 and the first expansion electrode 5 in a photoetching, etching and photoresist removing mode to manufacture a second insulating layer window 9-1;
s12, manufacturing bonding wire electrodes 10 on the second insulating layer 9, the first expansion electrode 5 and the second expansion electrode 7 at the second insulating layer window 9-1 in a photoetching, vapor deposition and photoresist removing mode;
s13, grinding and cutting to form a single integrated LED chip structure.
According to the integrated LED chip structure and the manufacturing method, the problems that the occupied area of pixel points is large and the display effect is affected in the prior art are well solved through redesigning and layout of the chip structure and providing corresponding manufacturing processes and methods, meanwhile, the manufacturing process is simplified, the chip isolation problem is solved, the reliability of products is improved, the production efficiency is improved, the production requirements of enterprises are met, and the competitiveness of the enterprises is improved.
Finally, it should be noted that the foregoing description is only a preferred embodiment of the present application, and although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof, and any modifications, equivalents, improvements or changes thereof may be made without departing from the spirit and principle of the present application.
Claims (17)
1. An integrated LED chip structure, comprising:
a growth substrate;
an epitaxial structure is arranged on the growth substrate, and the epitaxial structure sequentially comprises a negative polarity layer, a quantum well luminescent layer and a positive polarity layer from bottom to top;
a transparent conductive layer is arranged on the positive polarity layer of the epitaxial structure;
a first insulating layer is arranged on the transparent conductive layer, the negative polarity layer of the epitaxial structure and the growth substrate;
a first expansion electrode is arranged on the first insulating layer, the transparent conducting layer and the negative polarity layer of the epitaxial structure;
a reflective insulating layer is arranged on the first expansion electrode, the first insulating layer, the transparent conducting layer and the negative polarity layer of the epitaxial structure;
a second expansion electrode is arranged on the reflective insulating layer, the first insulating layer and the first expansion electrode;
a Micro LED chip is arranged on the second extension electrode;
a second insulating layer is arranged on the reflecting insulating layer, the second expansion electrode, the first insulating layer and the Micro LED chip;
and bonding wire electrodes are arranged on the second insulating layer, the second expansion electrode and the first expansion electrode.
2. The integrated LED chip structure of claim 1, wherein the growth substrate is a sapphire substrate having a thickness of 80-200um.
3. The integrated LED chip structure of claim 1, wherein the epitaxial structure is a blue or green epitaxial structure.
4. The integrated LED chip structure of claim 3, wherein when the epitaxial structure is a blue epitaxial structure, the Micro LED chips are green Micro LED chips and red Micro LED chips, respectively; when the epitaxial structure is a green light epitaxial structure, the Micro LED chips are respectively a blue light Micro LED chip and a red light Micro LED chip.
5. The integrated LED chip structure of claim 1, wherein the transparent conductive layer is made of ITO or IZO and has a thickness of 50-200nm.
6. The integrated LED chip structure of claim 1, wherein the first extended electrode comprises a negative polarity extended electrode and a positive polarity extended electrode, wherein the positive polarity extended electrode is interconnected with the transparent conductive layer and the negative polarity extended electrode is interconnected with the negative polarity layer of the epitaxial structure.
7. The integrated LED chip structure of claim 1, wherein the first insulating layer is made of an inorganic material or an organic material and has a thickness of 50-200nm; a first insulating layer window is arranged from the top surface of the first insulating layer to the surface of the transparent conducting layer and the negative polarity layer of the epitaxial structure in a penetrating way, so that the transparent conducting layer and the epitaxial structure are partially exposed; the first insulating layer window is in one of a round shape, an oval shape, a square shape and a diamond shape.
8. The integrated LED chip structure of claim 1, wherein the reflective insulating layer is made of a multi-layered laminate material having a thickness of 1-5um.
9. The integrated LED chip structure of claim 8, wherein a reflective insulating layer window is provided from the top surface of the reflective insulating layer through to the surface of the first extended electrode and the first insulating layer, and has one of a circular shape, an elliptical shape, a square shape, and a diamond shape.
10. The integrated LED chip structure of claim 7, wherein the second extended electrode is divided into three regions, namely region one, region two and region three, wherein the second extended electrode of region three is interconnected with the first extended electrode through the first insulating layer window.
11. The integrated LED chip structure of claim 10, wherein the Micro LED chip comprises two parts, a bonding layer and an epitaxial layer, wherein the bonding layer is interconnected with the second extension electrode by means of eutectic bonding.
12. The integrated LED chip structure of claim 11, wherein the negative electrode of the Micro LED chip is interconnected with the second extended electrode of the third region, and the positive electrode of the Micro LED chip is interconnected with the second extended electrodes of the first and second regions, respectively.
13. The integrated LED chip structure of claim 11, wherein the negative electrode of the Micro LED chip is interconnected with the second extended electrodes of the first and second regions, respectively, and the positive electrode of the Micro LED chip is interconnected with the second extended electrode of the third region.
14. The integrated LED chip structure of claim 1, wherein the second insulating layer is made of an organic insulating material or an inorganic insulating material; a second insulating layer window is formed from the top surface of the second insulating layer to the surfaces of the second expansion electrode and the first expansion electrode in a penetrating way, so that the second expansion electrode and the first expansion electrode are partially exposed; the shape of the second insulating layer window is one of round, oval, square or diamond.
15. The integrated LED chip structure of claim 14, wherein the wire bond electrodes are interconnected with the second extension electrode and the first extension electrode through a second insulating layer window.
16. The integrated LED chip structure of claim 15, wherein the wire bond electrode comprises, in order from bottom to top, an adhesive layer, a reflective layer, a barrier layer, and a bonding layer; the bonding layer is made of a metal material or other laminated materials, and the thickness is 2-10nm; the reflecting layer is positioned on the bonding layer and is made of a metal material or other laminated materials, and the thickness of the reflecting layer is 10-200nm; the barrier layer is positioned on the reflecting layer and made of a metal material or other laminated materials, and the thickness of the barrier layer is 50-500nm; the bonding layer is positioned on the barrier layer and is made of metal materials or other alloys, and the thickness of the bonding layer is 0.1-20um.
17. The manufacturing method of the integrated LED chip is characterized by comprising the following steps of:
s1, providing a growth substrate;
s2, manufacturing a blue light or green light epitaxial structure on the growth substrate;
s3, removing the positive polarity layer and the quantum well luminescent layer of the partial region epitaxial structure by means of photoetching, etching and photoresist removal to expose the negative polarity layer;
s4, removing the positive polarity layer, the quantum well light-emitting layer and the negative polarity layer of the partial region epitaxial structure in a photoetching, etching and photoresist removing mode to expose the growth substrate;
s5, manufacturing a transparent conductive layer on the positive polarity layer of the epitaxial structure in a deposition, photoetching, etching and photoresist removing mode;
s6, manufacturing a first insulating layer on the transparent conductive layer and the epitaxial structure in a deposition, photoetching, etching and photoresist removing mode, manufacturing a first insulating layer window, and exposing negative polarity layers of the transparent conductive layer and the epitaxial structure;
s7, manufacturing a first expansion electrode on the first insulating layer, the negative electrode layer of the epitaxial structure and the transparent conductive layer in a photoetching, vapor plating and photoresist removing mode, wherein the first expansion electrode is interconnected with the transparent conductive layer and the negative electrode layer of the epitaxial structure through a first insulating layer window;
s8, manufacturing a reflective insulating layer on the first insulating layer, the first extension electrode, the transparent conducting layer and the negative electrode layer of the epitaxial structure in a deposition mode, removing part of the reflective insulating layer on the first extension electrode and the first insulating layer in a photoetching, etching and photoresist removing mode, and manufacturing a reflective insulating layer window;
s9, manufacturing a second expansion electrode on the reflective insulating layer, the first insulating layer and the first expansion electrode in a photoetching, evaporation and photoresist removing mode, wherein the second expansion electrode is interconnected with the first expansion electrode through a window of the reflective insulating layer;
s10, transferring the Micro LED chip onto the second expansion electrode in a transfer mode, and then interconnecting the Micro LED chip and the second expansion electrode in a eutectic bonding mode;
s11, manufacturing a second insulating layer on the second expansion electrode, the Micro LED chip, the insulating reflecting layer and the first insulating layer in a deposition mode, and then removing part of the second expansion electrode, the second insulating layer and the reflecting insulating layer on the first expansion electrode in a photoetching, etching and photoresist removing mode to manufacture a second insulating layer window;
s12, manufacturing bonding wire electrodes on the second insulating layer, the first expansion electrode at the window of the second insulating layer and the second expansion electrode in a photoetching, vapor plating and photoresist removing mode;
s13, grinding and cutting to form a single integrated LED chip structure.
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