CN115482561A - Ultrasonic fingerprint identification device - Google Patents
Ultrasonic fingerprint identification device Download PDFInfo
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- CN115482561A CN115482561A CN202211163083.7A CN202211163083A CN115482561A CN 115482561 A CN115482561 A CN 115482561A CN 202211163083 A CN202211163083 A CN 202211163083A CN 115482561 A CN115482561 A CN 115482561A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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Abstract
The invention provides an ultrasonic fingerprint identification device, comprising: a conductive layer and a piezoelectric material layer. The conductive layer is provided with a plurality of layout metals and conductive pad bodies, and the layout metals are manufactured into a larger first width, wherein the first width is 10-150 micrometers. The piezoelectric material layer is positioned on the conducting layer and covers all the layout metal and part of the conducting pad body, so that the problem of bubbles caused by bonding due to the fact that the transparent conducting layer is manufactured on the piezoelectric material is solved, and the effects of reducing product defects and increasing the product yield are achieved.
Description
Technical Field
The present invention relates to a biometric identification device, and more particularly to an ultrasonic fingerprint identification device.
Background
In the field of portable electronic devices, fingerprint recognition has become one of the mainstream biometric methods in recent years. The current fingerprint identification technologies are roughly classified into capacitive touch, resistive touch, ultrasonic touch, and optical touch. The ultrasonic touch control is characterized by low cost and simple hardware. Ultrasonic touch utilizes the characteristic of ultrasonic reflection, and the generated ultrasonic waves are reflected by ridges and grooves and then transmitted back, so that the pattern of the fingerprint can be calculated by matching with an algorithm.
Ultrasonic fingerprint identification technique can scan the fingerprint through the ultrasonic wave, compares with traditional fingerprint identification mode, and ultrasonic fingerprint identification can carry out more deep analysis to the fingerprint, even if the finger surface is stained with the dirt and also does not hinder ultrasonic sampling, can also permeate the unique 3D characteristic of fingerprint under the skin surface even. Even if water, sweat, or the like is present in the hand, accurate recognition is still possible. Because the panels have a certain thickness, the ultrasonic waves have energy attenuation due to passing through the medium in the transmission process, and if the attenuation is too much, the identification result is wrong.
However, some development projects, such as the application of Augmented Reality (AR) glasses curved surface requirements or the application of fingerprint projects under an ultrasonic screen, require developing a flexible fingerprint recognition device, in which Polyvinylidene fluoride (PVDF) or Polyvinylidene fluoride-copolymer-trifluoroethylene (PVDF-TrFE) is used to replace the panel. However, the surface of the polyvinylidene fluoride is very easy to be scratched, and the polyvinylidene fluoride after surface scratching is subjected to circuit layer manufacturing, which is easy to cause yield loss. How to solve the above problems is a goal of the industry.
Disclosure of Invention
The present invention provides an ultrasonic fingerprint identification device, which is manufactured to have a larger first width by the layout metal in the conductive layer and is covered by the piezoelectric material layer to replace the complicated process of manufacturing the transparent conductive layer, thereby achieving the effect of increasing the production efficiency.
The present invention provides an ultrasonic fingerprint identification device, which solves the problem of bubbles caused by bonding during the manufacturing of a transparent conductive layer, thereby achieving the effects of reducing product defects and increasing product yield.
In order to achieve the above object, the present invention provides an ultrasonic fingerprint identification device, which comprises a piezoelectric film layer, wherein the piezoelectric film layer further comprises: a conductive layer and a piezoelectric material layer. The two side surfaces of the conducting layer are respectively a binding surface and a first top plane, and a first height is formed between the binding surface and the first top plane; the conductive layer is provided with a plurality of layout metals and a conductive pad body, the layout metals are provided with a first width, and the conductive pad body is positioned on one side of the conductive layer. The piezoelectric material layer is located on the conducting layer, the piezoelectric material layer covers all the layout metal and part of the conducting pad body, a second height is formed between a first top surface side of the piezoelectric material layer and the binding surface, and the second height is larger than the first height.
In a preferred embodiment of the present invention, the first width is between 10 micrometers (μm) and 150 micrometers (μm), the first height is between 30 nanometers (nm) and 50 micrometers (μm), and the second height is between 1 micrometer (μm) and 300 micrometers (μm).
In a preferred embodiment of the present invention, the piezoelectric material layer is made of Polyvinylidene fluoride (PVDF) or Polyvinylidene fluoride-copolymer (PVDF-TrFE PVDF-co-trifluoroethylene).
In a preferred embodiment of the present invention, the ultrasonic fingerprint identification device further includes a carrier layer, the piezoelectric film layer is disposed on the carrier layer, and the adhesive surface is attached to a surface of the carrier layer. The carrier layer is one of a Thin-Film Transistor (TFT), a Wafer (Wafer) and a transparent conductive Film (ITO Film). The conducting layer is made of silver, copper, ITO or Ag nano wires \8230, and the whole surface of one of the metal materials is coated on the bearing layer. The layout metals and the conductive pad bodies are manufactured on the bearing layer in an array patterning mode.
In a preferred embodiment of the present invention, the ultrasonic fingerprint identification device further includes a second piezoelectric film layer, the second piezoelectric film layer is located on the piezoelectric film layer, and further includes: a second conductive layer and a second piezoelectric material layer. The second conductive layer is located on the first top surface side of the piezoelectric material layer, and a second top plane of the second conductive layer is spaced from the first top surface side by the first height; the second conductive layer is provided with a plurality of second layout metals and a second conductive pad body, the second layout metals are provided with second widths attached to the first top surface side, a second distance is reserved between the second layout metals, and the second conductive pad body is located on one side of the second conductive layer. The second piezoelectric material layer is located on the second conductive layer, covers all the second layout metal and a part of the second conductive pad body, and has a second height from a second top surface side to the first top surface side, wherein the second height is greater than the first height.
In a preferred embodiment of the present invention, two layout metals are separated by a first distance, and when the first distance is equal to the second distance, the first width is equal to the second width; when the first pitch size is smaller than the second pitch size, the first width size is larger than the second width size; the first pitch dimension is greater than the second pitch dimension, and the first width dimension is less than the second width dimension.
Drawings
Fig. 1 is a side view of an ultrasonic fingerprint identification device according to a first preferred embodiment of the present invention.
FIG. 2 is a schematic side view of an ultrasonic fingerprint identification device according to a second preferred embodiment of the present invention.
FIG. 3 is a schematic side view of an ultrasonic fingerprint identification device according to a third preferred embodiment of the present invention.
FIG. 4 is a schematic side view of an ultrasonic fingerprint identification device according to a fourth preferred embodiment of the present invention.
FIG. 5 is a block diagram illustrating a manufacturing method of an ultrasonic fingerprint identification device according to a first preferred embodiment of the present invention.
FIG. 6 is a block diagram illustrating a method for manufacturing an ultrasonic fingerprint identification device according to a second preferred embodiment of the present invention.
FIG. 7 is a block diagram illustrating a manufacturing method of an ultrasonic fingerprint identification device according to a third preferred embodiment of the present invention.
FIG. 8 is a block diagram illustrating a fourth preferred embodiment of a method for manufacturing an ultrasonic fingerprint identification device according to the present invention.
The reference signs are:
1: piezoelectric thin film layer 312: second top plane
11: conductive layer 313: second layout metal
111: the abutting surface 314: the second conductive pad
112: first top plane 32: second piezoelectric material layer
113: layout metal 321: second top side
114: the conductive pad H1: first height
12: piezoelectric material layer H2: second height
121: first top surface side W1: first width
2: carrier layer W2: second width
21: surface S1: first interval
3: second piezoelectric thin film layer S2: second pitch
31: second conductive layer
Detailed Description
To achieve the above objects and advantages, the present invention provides a technical means and a structure, which is illustrated in the following drawings for fully understanding the features and functions of the preferred embodiments of the present invention, but it should be noted that the present invention is not limited thereto. In the present specification, the numerical range represented by the term "to" means a range including the numerical values before and after the term "to" as the lower limit and the upper limit. In addition, in the numerical ranges recited in the present specification, the upper limit or the lower limit recited in a certain numerical range may be replaced with the upper limit or the lower limit recited in another numerical range. In the numerical ranges described in the present specification, the upper limit or the lower limit described in a certain numerical range may be replaced with the values shown in the examples. The term "step" in the present specification is not limited to an independent step, and is also included in the present term as long as the desired purpose of the step can be achieved even when the step cannot be clearly distinguished from other steps. Moreover, although the terms "step" and/or "block" may be used herein or in the drawings to connote different elements of methods employed, the terms should not be interpreted as implying any particular order among or between various steps herein disclosed unless and except when the order of individual steps is explicitly recited.
Fig. 1 is a schematic side view of an ultrasonic fingerprint identification device according to a first preferred embodiment of the present invention. The invention provides an ultrasonic fingerprint identification device, which comprises a piezoelectric film layer 1, wherein the piezoelectric film layer 1 further comprises: a conductive layer 11 and a piezoelectric material layer 12. The conductive layer 11 is made of one of silver, copper, indium Tin Oxide (ITO) and silver nanowires. The two side surfaces of the conductive layer 11 are respectively an attaching surface 111 and a first top plane 112, and a first height H1 is formed between the attaching surface 111 and the first top plane 112, and the first height H1 is preferably 30 nanometers (nm) to 50 micrometers (μm).
The conductive layer 11 has a plurality of layout metals 113 and a conductive pad 114, and the layout metals 113 have a first width W1. Since the conventional ultrasonic fingerprint identification device usually requires to manufacture adjacent transparent conductive layers and metal layers, the first width of the metal layer is limited to less than 10 micrometers (μm), but the present invention only requires to manufacture a single conductive layer 11, and does not need to have adjacent transparent conductive layers and metal layers at the same time, and the present invention can make the first width W1 between 10 micrometers (μm) and 150 micrometers (μm) for the convenience of manufacturing. And the conductive pad 114 is located at one side of the conductive layer 11.
The piezoelectric material layer 12 is located on the conductive layer 11, and the piezoelectric material layer 12 is made of polyvinylidene fluoride (PVDF). The piezoelectric material layer 12 covers all the layout metal 113 and a portion of the conductive pad 114, a second height H2 is provided between a first top surface side 121 of the piezoelectric material layer 12 and the attaching surface 111, and the second height H2 is greater than the first height H1. In a preferred embodiment of the present invention, the second height H2 is between 1 micrometer (μm) and 300 micrometers (μm).
Fig. 2 is a schematic side view of an ultrasonic fingerprint identification device according to a second preferred embodiment of the present invention. Different from the above embodiments, the ultrasonic fingerprint identification device further includes a carrier layer 2, the piezoelectric film layer 1 is located on the carrier layer 2, and the attaching surface 111 is attached to a surface 21 of the carrier layer 2. The carrier layer 2 is one of a Thin-Film Transistor (TFT), a Wafer (Wafer) and a transparent conductive Film (ITO Film). The conductive layer 11 is formed by coating a whole surface of one of silver, copper, indium Tin Oxide (ITO) and silver nanowires on the carrier layer 2. A plurality of the layout metals 113 and the conductive pads 114 are patterned in an array on the carrier layer 2.
Please refer to fig. 3, which is a schematic side view of an ultrasonic fingerprint identification device according to a third preferred embodiment of the present invention. In order to increase the initial energy of the ultrasonic wave and reduce the erroneous identification result, unlike the embodiment shown in fig. 1, in this embodiment, the ultrasonic fingerprint identification apparatus further includes a second piezoelectric film layer 3, the second piezoelectric film layer 3 is located on the piezoelectric film layer 1, and the second piezoelectric film layer 3 further includes: a second conductive layer 31 and a second piezoelectric material layer 32. The second conductive layer 31 is located on the first top surface side 121 of the piezoelectric material layer 12, and a second top plane 312 of the second conductive layer 31 is spaced from the first top surface side 121 by the first height H1, and the first height H1 is preferably between 30 nanometers (nm) and 50 micrometers (μm).
The second conductive layer 31 has a plurality of second layout metals 313 and a second conductive pad 314, the second layout metals 313 have the second width W2 attached to the first top surface side 121, the second width W2 is 10 micrometers (μm) to 150 micrometers (μm), and the second conductive pad 314 is located on one side of the second conductive layer 31. The second piezoelectric material layer 32 is located on the second conductive layer 31, and the second piezoelectric material layer 32 covers all of the second layout metal 313 and a portion of the second conductive pad 314, a second top side 321 of the second piezoelectric material layer 32 is spaced from the first top side 121 by the second height H2, the second height H2 is between 1 micrometer (μm) and 300 micrometers (μm), and the second height H2 is greater than the first height H1. The second conductive layer 31 is formed by coating a whole surface of one of silver, copper, indium Tin Oxide (ITO) and silver nanowires on the piezoelectric thin film layer 1. A plurality of second layout metals 313 and the second conductive pads 314 are fabricated on the piezoelectric thin film layer 1 in an array patterning.
In a preferred embodiment of the present invention, a first space S1 is formed between the two layout metals 113, so that the first space S1 is equal to the second space S2, and the first width W1 is equal to the second width W2, which makes the design simpler and is easy to be implemented in the fabrication of the ultrasonic fingerprint identification device.
Of course, in another possible embodiment of the present invention, the design may also be a non-equal spacing design, that is, the size of the first spacing S1 is smaller than the size of the second spacing S2, and the size of the first width W1 is larger than the size of the second width W2; or the first space S1 is larger than the second space S2, and the first width W1 is smaller than the second width W2, so that the design is more flexible due to the non-equidistant design, and the second piezoelectric film layer 3 can be more compact with the piezoelectric film layer 1 due to the typesetting and stacking, thereby expectably improving the resolution and the touch identification capability of the ultrasonic fingerprint identification device.
Please refer to fig. 4, which is a schematic side view of an ultrasonic fingerprint identification device according to a fourth preferred embodiment of the present invention. Unlike the embodiment shown in fig. 3, the ultrasonic fingerprint sensor of the present invention further includes a supporting layer 2, the piezoelectric film layer 1 is disposed on the supporting layer 2, and the attaching surface 111 is attached to a surface 21 of the supporting layer 2. The carrier layer 2 is one of a Thin-Film Transistor (TFT), a Wafer (Wafer) and a transparent conductive Film (ITO Film). The conductive layer 11 is formed by coating a whole surface of one of silver, copper, indium Tin Oxide (ITO) and silver nanowires on the carrier layer 2. A plurality of the layout metals 113 and the conductive pads 114 are patterned in an array on the carrier layer 2.
Referring to fig. 5, a schematic flow chart diagram of a manufacturing method of an ultrasonic fingerprint identification device according to a first preferred embodiment of the invention is shown. The invention relates to a manufacturing method of an ultrasonic fingerprint identification device, which comprises the following steps:
step S91: providing a carrier layer, wherein the carrier layer is one of a Thin-Film Transistor (TFT), a Wafer (Wafer) and a transparent conductive Film (ITO Film).
Step S92: forming a conductive layer on a surface of the carrier layer, wherein the conductive layer has a plurality of layout metals and a conductive pad body, the layout metals are attached to the surface, and the conductive pad body is positioned on one side of the conductive layer.
Step S93: and forming a piezoelectric material layer to cover all the layout metals and part of the conductive pad body. From the above steps S91 to S93, the ultrasonic fingerprint recognition apparatus shown in fig. 2 is manufactured.
Referring to FIG. 6, a flow chart of a second preferred embodiment of a method for manufacturing an ultrasonic fingerprint identification device according to the present invention is shown. The method for manufacturing the ultrasonic fingerprint recognition device of the present invention, in addition to the steps S91 to S93, further includes the step S94: moving the conductive layer and the piezoelectric material layer from the surface will produce the ultrasonic fingerprint identification device shown in fig. 1.
Referring to FIG. 7, a third preferred embodiment of a method for manufacturing an ultrasonic fingerprint identification device according to the present invention is shown. The method for manufacturing the ultrasonic fingerprint recognition device of the present invention further includes, in addition to the steps S91 to S93, the step S95: and forming a second conductive layer on a top side and a first top side of the piezoelectric material layer, wherein the second conductive layer is provided with a plurality of second layout metals and a second conductive pad body, the second layout metals are attached to the top side and the first top side, and the second conductive pad body is positioned on one side of the second conductive layer. Step S96: and forming a second piezoelectric material layer to cover all the second layout metal and part of the second conductive pad body. The ultrasonic fingerprint recognition device shown in fig. 4 will be manufactured.
Referring to fig. 8, a schematic flow chart diagram of a fourth preferred embodiment of a manufacturing method of an ultrasonic fingerprint identification device according to the present invention is shown. The method for manufacturing the ultrasonic fingerprint identification device of the invention comprises the following steps S91, S92, S93, S95 and S96 in sequence, and further comprises the following step S97: moving the conductive layer, the piezoelectric material layer, the second conductive layer, and the second piezoelectric material layer out of the surface will produce the ultrasonic fingerprint identification device shown in fig. 3.
Through the above detailed description, the object and the effect of the present invention are fully shown to have the implementation progress, and have the industrial application value, and fully accord with the patent requirements of the invention, the application is made. While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention.
Claims (12)
1. An ultrasonic fingerprint identification device, comprising:
the piezoelectric thin film layer further includes:
the two side surfaces of the conducting layer are respectively a binding surface and a first top plane, and a first height is formed between the binding surface and the first top plane; the conducting layer is provided with a plurality of layout metals and conducting pad bodies, the layout metals are provided with a first width, and the conducting pad bodies are positioned on one side of the conducting layer;
the piezoelectric material layer is located on the conducting layer and covers all the layout metals and part of the conducting pad body, a second height is formed between the first top surface side of the piezoelectric material layer and the binding surface, and the second height is larger than the first height.
2. The ultrasonic fingerprint identification device of claim 1 wherein the first width is between 10 microns and 150 microns, the first height is between 30 nanometers and 50 microns, and the second height is between 1 micron and 300 microns.
3. The ultrasonic fingerprint identification device of claim 1, wherein the piezoelectric material layer is made of polyvinylidene fluoride or polyvinylidene fluoride-co-trifluoroethylene.
4. The ultrasonic fingerprint identification device of claim 1 further comprising a carrier layer, wherein the piezoelectric film layer is disposed on the carrier layer and the adhesive surface is disposed against a surface of the carrier layer.
5. The ultrasonic fingerprint device according to claim 4, wherein the carrier layer is one of a thin film transistor, a wafer and a transparent conductive film.
6. The ultrasonic fingerprint device according to claim 4, wherein said conductive layer is a metal material selected from the group consisting of Ag, cu, ITO, and Ag nanowires, which is coated on the entire surface of said carrier layer.
7. The ultrasonic fingerprint identification device of claim 4, wherein a plurality of the layout metals and the conductive pads are patterned in an array on the carrier layer.
8. The ultrasonic fingerprint identification device according to claim 1 or 4 further comprising a second piezoelectric film layer on said piezoelectric film layer, further comprising:
a second conductive layer located on the first top surface side of the piezoelectric material layer, and a second top plane of the second conductive layer being spaced apart from the first top surface side by the first height; the second conducting layer is provided with a plurality of second layout metals and second conducting pad bodies, the second layout metals are provided with second widths attached to the side of the first top surface, a second distance is reserved between the second layout metals, and the second conducting pad bodies are located on one side of the second conducting layer;
and the second piezoelectric material layer is positioned on the second conductive layer, covers all the second layout metal and part of the second conductive pad body, and has a second top surface side which is separated from the first top surface side by the second height, wherein the second height is greater than the first height.
9. The ultrasonic fingerprint identification device of claim 8 wherein the second width is between 10 microns and 150 microns, the first height is between 30 nanometers and 50 microns, and the second height is between 1 micron and 300 microns.
10. The ultrasonic fingerprint recognition device of claim 8, wherein two of said layout metals are separated by a first distance, said first distance being equal to said second distance dimension, and said first width being equal to said second width dimension.
11. The ultrasonic fingerprint identification device of claim 8 wherein two of the layout metals are separated by a first distance, the first distance dimension is smaller than the second distance dimension, and the first width dimension is larger than the second width dimension.
12. The ultrasonic fingerprint identification device of claim 8 wherein two of said layout metals are separated by a first pitch, wherein said first pitch is greater than said second pitch, and wherein said first width is less than said second width.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211163083.7A CN115482561A (en) | 2022-09-23 | 2022-09-23 | Ultrasonic fingerprint identification device |
| TW111136647A TWI824746B (en) | 2022-09-23 | 2022-09-28 | Ultrasonic fingerprint identification device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211163083.7A CN115482561A (en) | 2022-09-23 | 2022-09-23 | Ultrasonic fingerprint identification device |
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| CN115482561A true CN115482561A (en) | 2022-12-16 |
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| CN202211163083.7A Pending CN115482561A (en) | 2022-09-23 | 2022-09-23 | Ultrasonic fingerprint identification device |
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| TW (1) | TWI824746B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110739388B (en) * | 2019-10-23 | 2023-06-30 | 京东方科技集团股份有限公司 | Piezoelectric ultrasonic sensor, preparation method thereof and display device |
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- 2022-09-23 CN CN202211163083.7A patent/CN115482561A/en active Pending
- 2022-09-28 TW TW111136647A patent/TWI824746B/en active
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