CN115472573A - Novel plastic package power device packaging platform and manufacturing method thereof - Google Patents
Novel plastic package power device packaging platform and manufacturing method thereof Download PDFInfo
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- CN115472573A CN115472573A CN202210082172.2A CN202210082172A CN115472573A CN 115472573 A CN115472573 A CN 115472573A CN 202210082172 A CN202210082172 A CN 202210082172A CN 115472573 A CN115472573 A CN 115472573A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 238000007689 inspection Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000002216 antistatic agent Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 238000013461 design Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009421 internal insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a novel plastic package power device packaging platform and a manufacturing method thereof, and the novel plastic package power device packaging platform comprises a plastic package body and a power assembly arranged in the plastic package body, wherein the power assembly comprises a ceramic copper-clad substrate, a chip is fixedly connected to the surface of the ceramic copper-clad substrate, one end of a terminal is fixedly connected to one end of the ceramic copper-clad substrate, the terminal extends out of the plastic package body, one side of the plastic package body, which extends out of the terminal, is step-shaped, and one side of the plastic package body, which extends out of the terminal, is provided with a vertical groove. The device realizes that power single tube encapsulation is inside insulating, through the height of the relative cooling surface of lifting terminal, increase creepage distance and electric clearance, need not to carry out loaded down with trivial details potsherd operation of filling up during the installation, save assembly cost, electrified terminal part accords with the safety standard to creepage distance and electric clearance on the cooling surface along the plastic-sealed body surface and does not need to slot on the radiator, reduce cost, increase pottery covers copper base plate slide glass island area, can hold more heavy current specification chip, increase terminal sectional area, the reinforcing through-current capacity.
Description
Technical Field
The invention relates to the technical field of power device packaging, in particular to a novel plastic package power device packaging platform and a manufacturing method thereof.
Background
The power semiconductor device is widely applied to respective electric energy conversion equipment, various financial subsidies are gradually removed from new energy power generation systems such as photovoltaic power generation and wind power generation and new energy electric equipment such as electric automobiles, the requirements of the market on the cost of various new energy systems are stricter and stricter, in order to reduce the system cost, new energy equipment manufacturers gradually use a single-tube power device scheme to replace a modular power device technical scheme, the power grade of a single-tube power device is lower, and the devices are generally required to be connected in parallel to improve the system power. By taking a photovoltaic inverter as an example, the single-tube non-parallel scheme can realize the development of a machine with a power grade below 20kW, and the double-tube parallel scheme can realize a machine with a power grade below 50 kW; if a single-tube parallel scheme is used for realizing the development of a machine with higher power level, a larger number of single tubes need to be connected in parallel, and meanwhile, the parallel current sharing problem caused by inconsistent device parameters and asymmetric circuit layout exists in the technology, so that the design difficulty is caused.
The single tube package of current industry mainstream needs additionally to fill up the potsherd because the cooling surface is uninsulated, and the equipment flow is complicated, and for the potsherd fracture breakage that prevents to fill up, potsherd thickness is thicker usually, and the heat-sinking capability is relatively poor. Although the internal insulation single tube package cooled in a liquid state manner provided by the publication number CN212517172U can improve the overall heat dissipation effect, the defects of creepage distance and electric clearance of the terminal to the heat sink still exist, so that extra machining cost is required to be added to the heat sink to increase creepage distance and electric clearance so as to meet the safety standard, and the application of the single tube scheme to higher power level is limited, and therefore a novel plastic package power device package platform and a manufacturing method thereof are urgently needed to solve the problems.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a novel plastic package power device package platform and a manufacturing method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme: a novel plastic package power device package platform comprises a plastic package body and a power assembly arranged in the plastic package body;
the power assembly comprises a ceramic copper-clad substrate, the size of a carrying island on the surface of the ceramic copper-clad substrate is not less than 13.9mm x 10.8mm, and a chip is fixedly connected to the surface of the ceramic copper-clad substrate;
one end of the terminal is fixedly connected with one end of the ceramic copper-clad substrate, the terminal extends out of the plastic package body, and the vertical height of the lower surface of the terminal from the lower surface of the ceramic copper-clad substrate is not less than 3.5mm;
one side of the plastic package body, which extends out of the terminal, is step-shaped, and one side of the plastic package body, which extends out of the terminal, is provided with a vertical groove.
As a further description of the above technical solution: the ceramic copper-clad substrate comprises copper-clad layers and ceramic layers arranged between the copper-clad layers.
As a further description of the above technical solution: the thickness of the ceramic layer is 0.63mm, and the thickness of the copper-clad layer is 0.2-0.4mm.
As a further description of the above technical solution: the area of the slide island on the surface of the ceramic copper-clad substrate is 19.0mm × 12.5mm at most.
As a further description of the above technical solution: the front surface of the chip is connected with the copper-clad layer on the front surface of the ceramic copper-clad substrate through a bonding wire.
As a further description of the above technical solution: the lower copper-clad layer penetrates through the lower end of the plastic package body, and the lower copper-clad layer is exposed.
As a further description of the above technical solution: the step-shaped height of the plastic package body is 1-2mm, and the length of the plastic package body is 1-2mm.
As a further description of the above technical solution: the vertical grooves are arranged between the two groups of terminals, the width of each vertical groove is 1-2mm, and the longitudinal depth of each vertical groove is 0.5-1.0mm.
As a further description of the above technical solution: the terminal is bent, and the cross-sectional dimension of the terminal is not less than 1.2mm 0.8mm.
A manufacturing method of a novel plastic package power device package platform is characterized in that: the method comprises the following specific steps:
s1: placing the ceramic copper-clad substrate in a jig, and printing the ceramic copper-clad substrate on the surface of the front copper-clad layer through a pre-designed steel mesh soldering paste solder;
s2: attaching a chip to the solder paste printed on the surface of the ceramic copper-clad substrate by using an automatic chip mounter;
s3, mounting a terminal on a specially designed position of the ceramic copper-clad substrate, and performing vacuum welding;
s4, cleaning the welded chip-ceramic copper-clad substrate-terminal combination to remove residual organic matters and conductive ions on the surface;
s5, checking the void ratio of a welding layer between the chip and the ceramic copper-clad substrate by using X-ray checking equipment, and classifying the qualified products and defective products;
s6, electrically connecting a chip-ceramic copper-clad substrate-terminal assembly meeting the standard with a bonding wire by using ultrasonic bonding equipment;
s7, performing appearance inspection on the chip, the bonding wire and the ceramic copper-clad substrate through optical inspection;
s8, carrying out plastic package and wrapping on the chip-ceramic copper-clad substrate-terminal assembly through a special die, and then baking and curing the assembly;
s9, marking product information on the plastic package body, and performing insulation test, dynamic test and static test;
s10, placing the product into an anti-static material pipe and a packaging box for packaging.
The invention has the following beneficial effects:
1. according to the invention, the ceramic layer for insulation is arranged inside the plastic package body, so that compared with the existing power single tube, the complex operation of padding a ceramic plate below the power single tube and coating two layers of heat-conducting silicone grease in the installation process is omitted, the operation process is simplified, and the cost can be reduced.
2. According to the invention, the height of the terminal relative to the lower copper-clad layer is raised, so that the creepage distance and the electric clearance are increased, the safety standard is met, and the creepage distance and the creepage clearance are increased without additionally digging a groove on the lower radiator, so that the machining cost is greatly reduced.
3. According to the invention, by increasing the area of the ceramic copper-clad substrate carrying island, a chip with a larger current specification can be accommodated, the sectional area of the terminal is increased, the through-current capability is enhanced, and the application power section range of a power single-tube scheme is expanded. The power output capacity of a single device is increased, the number of parallel devices can be reduced, the area of a PCB (printed circuit board) of a system is saved, and the design difficulty of the system is simplified.
4. According to the invention, the vertical grooves are formed on the terminal extending surface of the plastic package body, so that the extending part forms a protruding shape, when the device is applied to a high-pollution-level environment, a user can conveniently design a corresponding protective cover to be sleeved on the pin of the device, no gap is left around the pin, and discharge caused by dust accumulated between adjacent pins is avoided.
Drawings
Fig. 1 is a perspective view of a novel plastic package power device package platform provided by the invention;
fig. 2 is a side view of a novel plastic package power device package platform according to the present invention;
fig. 3 is a bottom perspective view of a novel plastic package power device package platform according to the present invention;
fig. 4 is a perspective view of an internal power component of a novel plastic package power device package platform according to the present invention;
fig. 5 is a side view of the power module inside the novel plastic package power device package platform according to the present invention;
fig. 6 is a top view of the power module inside the novel plastic package power device package platform according to the present invention.
Illustration of the drawings:
1. molding the body; 2. a power component; 201. a ceramic copper-clad substrate; 2011. coating a copper layer; 2012. a ceramic layer; 202. a chip; 203. a terminal; 3. a vertical trench; 4. and bonding wires.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and furthermore, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-6, an embodiment of the present invention is provided: a novel plastic package power device packaging platform comprises a plastic package body 1 and a power component 2 arranged inside the plastic package body 1;
the power component 2 comprises a ceramic copper-clad substrate 201, and the size of a carrying island on the surface of the ceramic copper-clad substrate 201 is not less than 13.9mm x 10.8mm, and can reach 19.0mm x 12.5mm at most, which is more than 1.5 times of that of the existing common packageTherefore, a chip 202 with a larger current specification can be accommodated, the chip 202 is fixedly connected to the surface of the ceramic copper-clad substrate 201, a circuit pattern is etched on the upper layer of the ceramic copper-clad substrate 201 and used for connecting device electrodes, the chip 202 and the ceramic copper-clad substrate 201 are welded through tin paste, and the tin paste is SnAg 3 Cu 0.5 One or more chips 202 may be soldered to the carrier island;
one end of the terminal 203 is fixedly connected to one end of the ceramic copper-clad substrate 201, three or four terminals 203 are welded through solder, the terminal 203 extends out of the plastic package body 1, and the vertical height from the lower surface of the terminal 203 to the lower surface of the ceramic copper-clad substrate 201 is not less than 3.5mm;
one side of the plastic package body 1 extending out of the terminal 203 is step-shaped, and one side of the plastic package body 1 extending out of the terminal 203 is provided with a vertical groove 3.
Further, the step-shaped height of the plastic package body 1 is 1-2mm, and the length is 1-2mm, and the preferred height is 1mm and the preferred length is 2mm.
Further, the vertical groove 3 is disposed between the two sets of terminals 203, and the width of the vertical groove is 1-2mm, the longitudinal depth is 0.5-1mm, preferably the width is 1.2mm, and the longitudinal depth is 0.6mm.
According to the technical scheme, through the structural design, the distance from the charged part of the terminal 203 to the copper-clad layer 2011 of the lower layer of the ceramic copper-clad substrate 201 along the bottom surface of the plastic package body 1 is greater than 5mm, the vertical height electrical gap from the lower surface of the copper-clad layer 2011 of the lower layer of the lower surface of the terminal 203 is greater than 3.5mm, the product meets the safety standard, the groove does not need to be additionally dug on the radiator below to increase the creepage distance and creepage gap, and the machining cost is greatly reduced.
Further, the ceramic copper-clad substrate 201 includes copper-clad layers 2011 and a ceramic layer 2012 arranged between the copper-clad layers, and the ceramic layer 2012 is Al 2 O 3 Ceramics or AlN ceramics, si 3 N 4 A ceramic.
Further, the thickness of the ceramic layer 2012 is 0.63mm, and the thickness of the copper-clad layer 2011 is 0.2-0.4mm.
According to the technical scheme, the insulating ceramic layer 2012 is arranged inside the plastic package body 1, the copper-clad layers 2011 are arranged on the upper side and the lower side of the ceramic layer 2012 respectively, the copper-clad layers 2011 on the lower layer are exposed outside the plastic package body 1, the operation of filling a ceramic plate in an installation link and smearing two layers of heat-conducting silicone grease is omitted when the product is installed under the conditions of ensuring heat dissipation and avoiding electric leakage, the operation flow is simplified, and the installation efficiency is improved
Further, the front surface of the chip 202 is connected to the copper-clad layer 2011 on the front surface of the ceramic copper-clad substrate 201 through the bonding wire 4, and the material of the bonding wire 4 is aluminum or an aluminum alloy, and the diameter of the bonding wire is 125 micrometers to 500 micrometers.
Further, two-layer about copper layer 2011 is provided with, and lower floor covers copper layer 2011 and runs through the lower extreme of plastic-sealed body 1, and lower floor covers copper layer 2011 and is the exposed state to the heat of the whole power single tube of being convenient for is outwards gived off from the copper layer 2011 of lower floor.
Furthermore, the terminal 203 is bent, and the cross-sectional size of the terminal 203 is not less than 1.2mm × 0.8mm, which increases the cross-sectional area compared with the existing terminal 203, so that the current capacity of the terminal 203 can be enhanced, and the application power range of the whole power single tube can be increased.
A manufacturing method of a novel plastic package power device packaging platform comprises the following specific steps:
s1: placing the ceramic copper-clad substrate 201 in a jig, and printing the surface of the front copper-clad layer 2011 by a pre-designed steel mesh soldering paste solder;
s2: attaching the chip 202 to solder paste printed on the surface of the ceramic copper-clad substrate 201 by an automatic chip mounter;
s3, mounting the terminal 203 on a specially designed position of the ceramic copper-clad substrate 201, and performing vacuum welding;
s4, cleaning the welded chip 202-ceramic copper-clad substrate 201-terminal 203 assembly to remove residual organic matters and conductive ions on the surface;
s5, checking the void ratio of the welding layer between the chip 202 and the ceramic copper-clad substrate 201 by using X-ray checking equipment, and classifying the qualified products and defective products;
s6, electrically connecting the assembly of the chip 202, the ceramic copper-clad substrate 201 and the terminal 203 which meets the standard by using a bonding wire 4 between the chip 202 and the ceramic copper-clad substrate 201 by using ultrasonic bonding equipment;
s7, performing appearance inspection on the chip 202, the bonding wire 4 and the ceramic copper-clad substrate 201 through optical inspection;
s8, carrying out plastic package on the combination of the chip 202, the ceramic copper-clad substrate 201 and the terminal 203 through a special die, and then carrying out baking and curing treatment on the combination;
s9, marking product information on the plastic package body 1, and performing insulation test, dynamic test and static test;
s10, placing the product into an anti-static material pipe and a packaging box for packaging.
The working principle is as follows: in the manufacturing process of the product, the ceramic layer 2012 for insulation is arranged inside the plastic package body 1, the copper-clad layers 2011 are respectively arranged on the upper side and the lower side of the ceramic layer 2012, and the copper-clad layers 2011 on the lower layer are exposed outside the plastic package body 1, so that under the conditions of ensuring heat dissipation and avoiding electric leakage, when the product is installed, the operation of padding a ceramic plate in an installation link and coating two layers of heat-conducting silicone grease is omitted, the operation process is simplified, the installation efficiency is improved, the island area of the copper-clad layer 2011 on the upper layer of the ceramic layer 2012 can maximally reach 19.0mm x 12.5mm, which is 1.5 times of that of the existing common package, so that the chip 202 with a larger current specification can be accommodated, the sectional area of the terminal 203 connected to one end of the ceramic copper-clad substrate 201 is at least 1.2mm x 0.8mm, the sectional area is increased compared with the existing terminal 203, the through-flow capacity of the terminal 203 can be enhanced, the application power range of the whole power single tube can be increased, and the use difficulty of a PCB system can be reduced.
The welding is through bending treatment at the terminal 203 of pottery copper-clad substrate 201, and externally 1 bottom of plastic-sealed body also is provided with corresponding step-like arch, make terminal 203 the certain height of lifting, the height of the bottom step of plastic-sealed body 1 is 1mm, length is 2mm, through above-mentioned structural design, make the electrified part of terminal 203 along the distance that 1 bottom surface of plastic-sealed body covered copper layer 2011 of pottery copper-clad substrate 201 lower floor is greater than 5mm, the perpendicular high electrical clearance of covering copper layer 2011 lower surface of terminal 203 lower surface distance lower floor is greater than 3.5mm, make this product accord with safety standard, need not additionally to dig the groove on the radiator of below and increase creepage distance and creepage clearance, the machining cost that significantly reduces.
And vertical slot 3 has been seted up in the one side that stretches out the plastic-sealed body 1 at terminal 203, vertical slot 3's width is 1.2mm, vertical degree of depth is 0.6mm, thereby make the creepage distance between two sets of terminals 203 satisfy the safety standard, simultaneously owing to be provided with vertical slot 3, make the one side that terminal 203 stretches out the plastic-sealed body 1 split into the multiunit lug, use the protection casing on with the pin of terminal 203, the edge card of protection casing is in vertical slot 3, compare in current plastic-sealed body 1 who does not set up vertical slot 3, can not leave the gap around the pin, thereby avoid piling up the dust between the adjacent terminal 203 pin and discharge each other, thereby can be applicable to high polluted environment.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (10)
1. The utility model provides a novel plastic envelope power device encapsulates platform which characterized in that: the plastic package comprises a plastic package body (1) and a power assembly (2) arranged in the plastic package body (1);
the power assembly (2) comprises a ceramic copper-clad substrate (201), the size of a carrying island on the surface of the ceramic copper-clad substrate (201) is not less than 13.9mm x 10.8mm, and a chip (202) is fixedly connected to the surface of the ceramic copper-clad substrate (201);
one end of the terminal (203) is fixedly connected with one end of the ceramic copper-clad substrate (201), the terminal (203) extends out of the plastic package body (1), and the vertical height of the lower surface of the terminal (203) from the lower surface of the ceramic copper-clad substrate (201) is not less than 3.5mm;
one side of the plastic package body (1) extending out of the terminal (203) is step-shaped, and a vertical groove (3) is formed in one side of the plastic package body (1) extending out of the terminal (203).
2. The novel plastic package power device packaging platform according to claim 1, characterized in that: the ceramic copper-clad substrate (201) comprises copper-clad layers (2011) and ceramic layers (2012) arranged between the copper-clad layers.
3. The novel plastic package power device packaging platform according to claim 2, characterized in that: the thickness of ceramic layer (2012) is 0.63mm, the thickness of covering copper layer (2011) is 0.2-0.4mm.
4. The novel plastic package power device packaging platform according to claim 1, characterized in that: the area of the carrying island on the surface of the ceramic copper-clad substrate (201) is 19.0mm × 12.5mm at most.
5. The novel plastic package power device packaging platform according to claim 2, characterized in that: the front surface of the chip (202) is connected with the copper-clad layer (2011) on the front surface of the ceramic copper-clad substrate (201) through a bonding wire (4).
6. The novel plastic package power device packaging platform according to claim 2, characterized in that: it is provided with two-layer about covering copper layer (2011), lower floor cover copper layer (2011) and run through the lower extreme of plastic-sealed body (1), lower floor cover copper layer (2011) and be the exposed state.
7. The novel plastic package power device packaging platform according to claim 1, characterized in that: the step-shaped height of the plastic package body (1) is 1-2mm, and the length is 1-2mm.
8. The novel plastic package power device packaging platform according to claim 1, characterized in that: the vertical grooves (3) are arranged between the two groups of terminals (203), the width of each vertical groove is 1-2mm, and the longitudinal depth of each vertical groove is 0.5-1mm.
9. The novel plastic package power device packaging platform according to claim 1, characterized in that: the terminal (203) is bent, and the cross-sectional dimension of the terminal (203) is not less than 1.2mm x 0.8mm.
10. A manufacturing method of a novel plastic package power device package platform is characterized in that: the method comprises the following specific steps:
s1: placing the ceramic copper-clad substrate in a jig, and printing the ceramic copper-clad substrate on the surface of the front copper-clad layer through a pre-designed steel mesh soldering paste solder;
s2: attaching a chip to the solder paste printed on the surface of the ceramic copper-clad substrate by using an automatic chip mounter;
s3, mounting a terminal on a specially designed position of the ceramic copper-clad substrate, and performing vacuum welding;
s4, cleaning the welded chip-ceramic copper-clad substrate-terminal assembly to remove residual organic matters and conductive ions on the surface;
s5, checking the void ratio of a welding layer between the chip and the ceramic copper-clad substrate by using X-ray checking equipment, and classifying the qualified products and defective products;
s6, electrically connecting a chip-ceramic copper-clad substrate-terminal assembly which meets the standard with an ultrasonic bonding device by using a bonding wire;
s7, performing appearance inspection on the chip, the bonding wire and the ceramic copper-clad substrate through optical inspection;
s8, carrying out plastic package and wrapping on the chip-ceramic copper-clad substrate-terminal assembly through a special die, and then baking and curing the assembly;
s9, marking product information on the plastic package body, and performing insulation test, dynamic test and static test;
s10, placing the product into an anti-static material pipe and a packaging box for packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210082172.2A CN115472573A (en) | 2022-01-24 | 2022-01-24 | Novel plastic package power device packaging platform and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210082172.2A CN115472573A (en) | 2022-01-24 | 2022-01-24 | Novel plastic package power device packaging platform and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115472573A true CN115472573A (en) | 2022-12-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210082172.2A Pending CN115472573A (en) | 2022-01-24 | 2022-01-24 | Novel plastic package power device packaging platform and manufacturing method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN115472573A (en) |
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