CN115453429B - Magnetic sensor, manufacturing method thereof and magnetic field measuring system - Google Patents
Magnetic sensor, manufacturing method thereof and magnetic field measuring system Download PDFInfo
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- CN115453429B CN115453429B CN202211401786.9A CN202211401786A CN115453429B CN 115453429 B CN115453429 B CN 115453429B CN 202211401786 A CN202211401786 A CN 202211401786A CN 115453429 B CN115453429 B CN 115453429B
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
Abstract
The invention relates to a magnetic sensor and a preparation method thereof, and a magnetic field measurement system comprises: the dielectric layer is provided with an accommodating space and a groove which are oppositely arranged; the magnetic layer is arranged in the accommodating space and deforms in the magnetic field to be detected to generate stress, and the stress and the field intensity of the magnetic field to be detected are in positive correlation; the cantilever beam is arranged on the end face of the medium layer on the side where the groove is located, the cantilever beam forms a suspension part at the position of the groove, the suspension part deforms under the stress action of the medium layer, and the deformation degree is used for representing the field intensity of the magnetic field to be measured. The magnetic sensor provided by the application converts the stress change of the magnetic layer into the change on a more sensitive cantilever beam. Under the condition that the magnetic field to be measured has slight change, the field intensity information can be accurately measured by an electrical measurement or optical measurement mode, and the change condition of the magnetic field to be measured is more sensitively sensed, so that the sensitivity of the magnetic sensor is remarkably improved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a magnetic sensor, a preparation method thereof and a magnetic field measuring system.
Background
The magnetic sensor is a sensor for measuring the change of the magnetic field and the application scenes of the magnetic sensor become wider and wider along with the increase of the use of portable equipment, so that the requirement on the technical index of the magnetic sensor is higher, and the traditional magnetic sensor cannot meet the requirement of the current equipment on high sensitivity.
Disclosure of Invention
Based on this, there is a need for a magnetic sensor with high sensitivity, a method for manufacturing the same, and a magnetic field measurement system.
To achieve the above object, in one aspect, the present application provides a magnetic sensor comprising:
the dielectric layer is provided with an accommodating space and a groove which are oppositely arranged;
the magnetic layer is arranged in the accommodating space and deforms in the magnetic field to be detected to generate stress, and the stress and the field intensity of the magnetic field to be detected are in positive correlation;
the cantilever beam is arranged on the end face of the medium layer on the side where the groove is located, the cantilever beam forms a suspension part at the position of the groove, the suspension part deforms under the stress action of the medium layer, and the deformation degree is used for representing the field intensity of the magnetic field to be measured.
According to the magnetic sensor, the stress change generated by the deformation of the magnetic layer in the magnetic field to be detected is conducted to the cantilever beam through the medium layer, so that the suspended part of the cantilever beam is deformed, and the stress change of the magnetic layer is converted into the change on the more sensitive cantilever beam. Under the condition that a magnetic field to be measured slightly changes, the deformation amount of the magnetic layer is small, and field intensity information is difficult to measure according to the deformation condition of the magnetic layer. Based on the characteristics, the field intensity information can be accurately measured according to the deformation degree of the cantilever beam in an electrical measurement or optical measurement mode, and the change condition of the magnetic field to be measured can be more sensitively sensed, so that the sensitivity of the magnetic sensor is remarkably improved.
In one embodiment, the cantilever beam, the magnetic layer and the dielectric layer are all centrosymmetric structures, and the centrosymmetric point of the cantilever beam, the centrosymmetric point of the magnetic layer and the centrosymmetric point of the dielectric layer are located on the same straight line.
In one embodiment, the dielectric layer further has a first protrusion and a second protrusion formed on both sides of the groove, and the magnetic sensor further includes: the source electrode is positioned between the first bulge part and the cantilever beam; the drain electrode is positioned between the second bulge part and the cantilever beam; the grid is positioned on the surface of the groove opposite to the cantilever beam; the source electrode, the drain electrode and the grid electrode are all used for being connected with the measuring circuit and transmitting electric signals to the measuring circuit, and the measuring circuit is used for calculating field intensity information of the magnetic field to be measured according to the electric signals of the source electrode, the electric signals of the drain electrode and the electric signals of the grid electrode.
In one embodiment, the dielectric layer comprises: the first medium layer is provided with an accommodating space; and the second dielectric layer is arranged on the first dielectric layer and is provided with a groove.
In one embodiment, the cantilever beam is a two-dimensional material.
The invention also provides a preparation method of the magnetic sensor, which comprises the following steps: providing a dielectric layer; forming an accommodating space and a groove in the dielectric layer; forming a magnetic layer in the accommodating space; and forming a cantilever beam on the end face of the dielectric layer on the side where the groove is located.
According to the preparation method of the magnetic sensor, the accommodating space and the groove are formed on the medium layer, and the magnetic layer and the cantilever beam are respectively formed to form the magnetic sensor. The magnetic sensor has high sensitivity, and the preparation method realizes the integration of the magnetic layer and the cantilever beam based on the dielectric layer while ensuring the high sensitivity of the sensor, thereby being beneficial to the miniaturization design of the magnetic sensor.
The invention also provides a magnetic field measuring system, which comprises a magnetic sensor and a measuring circuit; the measuring circuit is used for collecting a measuring signal generated by the magnetic sensor under a magnetic field to be measured and calculating field intensity information of the magnetic field to be measured according to the measuring signal. The measurement signal is used to characterize the degree of deformation of the suspended portion.
In one embodiment, the measurement signal includes first and second reflected lights, and the measurement circuit includes: an emitter for projecting a beam of light onto the suspended portion of the cantilever; and the photoelectric converter is used for receiving the first reflected light of the light beam reflected by the suspension part and the second reflected light of the light beam reflected by the dielectric layer after penetrating through the suspension part, and generating the field intensity information of the magnetic field to be detected according to the first reflected light and the second reflected light.
In one embodiment, the measurement circuit comprises a vector network analyzer; the dielectric layer still is formed with first bellying and second bellying in recess both sides, and magnetic sensor still includes: the source electrode is positioned between the first bulge part and the cantilever beam; the drain electrode is positioned between the second bulge part and the cantilever beam; the grid is positioned on the surface of the groove opposite to the cantilever beam;
the vector network analyzer is respectively connected with the source electrode, the drain electrode and the grid electrode, and the vector network analyzer calculates the field intensity information of the magnetic field to be measured according to the electric signal of the source electrode, the electric signal of the drain electrode and the electric signal of the grid electrode.
According to the magnetic field measurement system, the magnetic sensor generates the measurement signal under the magnetic field to be measured, the size of the measurement signal is related to the deformation of the suspension part of the cantilever beam, the measurement signal is input into the measurement circuit to be calculated, so that the field intensity information of the magnetic field to be measured can be obtained, and the field intensity of the magnetic field to be measured can be accurately and efficiently measured according to the deformation of the suspension part.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method of manufacturing a magnetic sensor provided in an embodiment;
fig. 2 is a schematic structural diagram of a magnetic sensor provided in an embodiment;
fig. 3 is a schematic structural view of a magnetic sensor provided in another embodiment;
FIG. 4 is a schematic diagram of a magnetic field measurement system provided in an embodiment;
fig. 5 is a schematic structural diagram of a magnetic field measurement system provided in another embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it can be directly on, adjacent or connected to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," or "directly connected to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention; for example, the first doping type may be made the second doping type, and similarly, the second doping type may be made the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may comprise additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention, such that variations from the shapes shown are to be expected, for example, due to manufacturing techniques and/or tolerances. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
Referring to fig. 1, the present invention provides a method for manufacturing a magnetic sensor, including the following steps:
s102: forming a dielectric layer;
it should be noted that the dielectric layer may be composed of a single layer, two or more dielectric layers. The material of the dielectric layer can be selected from silicon, silicon dioxide and the like. Alternatively, the dielectric layer may be composed of two dielectric layers.
Step S102 may include the steps of:
forming a first dielectric layer;
a second dielectric layer is formed on the first dielectric layer.
The first dielectric layer is a silicon dielectric layer, and the second dielectric layer is a silicon dioxide dielectric layer. Optionally, the first dielectric layer may be a cuboid as a whole, and the first dielectric layer has a length of 5 μm, a width of 5 μm, and a thickness of 2 μm; the second dielectric layer may be a rectangular parallelepiped as a whole, and has a length of 5 μm, a width of 5 μm, and a thickness of 1 μm.
S104: forming an accommodating space and a groove in the dielectric layer;
the accommodating space and the groove may be in the shape of a cuboid, a cube, or the like, but are not limited thereto. The positions of the accommodating space and the groove can be correspondingly arranged as shown in fig. 2.
Optionally, the accommodating space, the groove and the dielectric layer are all of a centrosymmetric structure, and centrosymmetric points of the accommodating space, the groove and the dielectric layer are located on a straight line. As shown in fig. 2, a projected area a of the accommodating space on the bottom surface of the dielectric layer and a projected area B of the groove on the bottom surface of the dielectric layer are both smaller than an area C of the bottom surface of the dielectric layer. The projected area B should not be too small or too large, which would affect the deformation of the suspended part. The size of the projected area B may be based on the measurement range and measurement sensitivity requirements of the magnetic sensor. The size of the suspended part can be determined according to the requirement of the magnetic sensor, and then the projection area B of the groove can be determined. Optionally, the accommodating space may be a cuboid, and has a length of 4 μm, a width of 4 μm, and a thickness of 1 μm; the grooves may be rectangular, 1 μm in length, 1 μm in width and 1 μm in thickness.
When the dielectric layers include a first dielectric layer and a second dielectric layer, step S104 may include:
forming an accommodating space in the first medium layer;
and forming a groove in the second dielectric layer.
S106: forming a magnetic layer in the accommodating space;
in one embodiment, the volume of the magnetic layer is equal to the volume of the accommodating space, and the accommodating space is occupied by the magnetic layer, so that the strain force generated by the deformation of the magnetic layer in the magnetic field can be better transmitted to the cantilever beam through the dielectric layer. Alternatively, the magnetic layer may be a cuboid with a length of 4 μm, a width of 4 μm and a thickness of 1 μm. Note that the magnetostrictive layer is a magnetostrictive material, and the magnetostrictive material includes, but is not limited to, nickel-based alloys such as nickel, nickel-cobalt alloy, and nickel-cobalt-chromium alloy, iron-based alloys such as iron-nickel alloy, iron-aluminum alloy, iron-cobalt-vanadium alloy, and iron-gallium alloy, or ferrite materials such as nickel-cobalt and nickel-cobalt-copper. In one embodiment, the magnetic layer is an iron gallium alloy.
S108: and forming a cantilever beam on the end face of the dielectric layer on the side where the groove is located.
It should be noted that the length L1 of the cantilever beam should be greater than the length L2 of the recess, as illustrated in the cross-sectional view of fig. 2, so that the cantilever beam can be disposed on the end face of the dielectric layer and form a suspended portion at the location of the recess. Optionally, the cantilever has a length of 3 μm, a width of 1 μm, and a thickness of 1nm. It should be noted that the cantilever is a two-dimensional material, and the two-dimensional material includes, but is not limited to, graphene, black phosphorus, boron nitride, and transition metal chalcogenides such as molybdenum disulfide and tungsten disulfide. Optionally, the cantilever beam is molybdenum disulfide.
In one embodiment, the first protruding portion and the second protruding portion are further formed on two sides of the groove, and step S108 further includes:
forming a source electrode on the first protrusion;
forming a drain electrode on the second protrusion portion;
and forming a grid on the surface of the groove opposite to the cantilever beam.
As shown in the cross-sectional view of fig. 3, the source electrode has a length of 1 μm, a width of 1 μm, and a thickness of 25nm, and is made of titanium and gold, and is composed of titanium with a thickness of 5nm and gold with a thickness of 20 nm; the length of the drain electrode is 1 mu m, the width of the drain electrode is 1 mu m, the thickness of the drain electrode is 25nm, the drain electrode is made of titanium and gold, and the drain electrode is composed of titanium with the thickness of 5nm and gold with the thickness of 20 nm; the length of the grid is 1 μm, the width is 1 μm, the thickness is 25nm, the material is titanium and gold, and the grid is composed of titanium with the thickness of 5nm and gold with the thickness of 20 nm.
In the manufacturing method of the magnetic sensor in the above example, the accommodating space and the groove are formed on the dielectric layer, and the magneto layer and the cantilever beam are respectively formed, so that the sensor has a configuration basis required by high sensitivity in measuring a magnetic field, and simultaneously, the miniaturization requirement of the magnetic sensor is simply met.
It should be understood that, although the steps in the drawings are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in the figures may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of execution of the steps or stages is not necessarily sequential, but may be performed alternately or in alternation with other steps or at least some of the other steps or stages.
Referring to fig. 2 and fig. 3, the present invention further provides a magnetic sensor, including: a dielectric layer, a magnetic layer 206, and a cantilever 208.
Specifically, the dielectric layer has an accommodating space and a groove which are oppositely arranged, the magnetic layer 206 is arranged in the accommodating space, and the cantilever beam 208 is arranged on the end surface of the dielectric layer on the side of the groove.
Specifically, the magnetic layer 206 deforms in the magnetic field to generate a stress, and the stress has a positive correlation with the field strength of the magnetic field. It should be noted that the magnetic layer 206 is a magnetostrictive material, and the magnitude of the stress generated under the magnetic field to be measured has a positive correlation with the field strength of the magnetic field to be measured.
Specifically, the cantilever beam 208 forms a suspended portion at the groove position, the suspended portion deforms under the stress action of the dielectric layer, and the degree of deformation is used for representing the field intensity of the magnetic field to be measured. It should be noted that, according to the elastic modulus of the magnetostrictive material, the stress variation range of the magnetostrictive layer 206, and the transmission coefficient of the dielectric layer, the stress variation range of the cantilever beam 208, and thus the deformation degree of the suspended portion of the cantilever beam 208, can be determined. Specifically, in the dielectric layer, the stress is transferred from the magnetic layer 206 to the cantilever beam 208; stress on cantilevered beam 208 creates tensile forces in two opposite directions at the ends of cantilevered beam 208. It should be noted that the cantilever beam 208 is a two-dimensional material, which has superior mechanical and electrical properties compared to a magnetostrictive material.
It can be known from the foregoing description of the embodiments that, in the embodiments of the present application, a stress change generated by deformation of the magnetic layer 206 in a magnetic field to be measured is transmitted to the cantilever 208 through the dielectric layer, so that a suspended portion of the cantilever 208 is deformed, and the stress change of the magnetic layer 206 is converted into a more sensitive change on the cantilever 208. In the case that the magnetic field to be measured changes slightly, the deformation amount of the magnetic layer 206 is small, and it is difficult to measure the field strength information according to the deformation condition of the magnetic layer 206, but with the above structure, when the magnetic layer 206 deforms slightly, the cantilever beam 208 also deforms slightly, but the change degree of the electrical measurement signal or the optical measurement signal caused by the small deformation of the cantilever beam 208 is obvious. Based on the characteristics, the field intensity information can be accurately measured according to the deformation degree of the cantilever beam 208 through an electrical measurement or optical measurement mode, and the change condition of the magnetic field to be measured can be more sensitively sensed, so that the sensitivity of the magnetic sensor is remarkably improved.
In one embodiment, the cantilever beam 208, the magnetic layer 206 and the dielectric layer are all of a central symmetric structure, and a central symmetric point of the cantilever beam 208, a central symmetric point of the magnetic layer 206 and a central symmetric point of the dielectric layer are located on the same straight line. When the three are all centrosymmetric structures and are arranged in an axisymmetric manner, the strain force of the magnetic layer 206 can be uniformly transmitted to the cantilever beam 208, and at this time, the measurement circuit is more accurate in deformation measurement of the cantilever beam 208, for example, when the measurement is performed in an optical manner, the consistency of interference phenomena of reflected light of the light beam projected by the emitter 101 at each position of the suspended part is good, so that the reliability of the measurement result is ensured.
In one embodiment, the dielectric layer further has a first protrusion and a second protrusion formed on both sides of the groove, and the magnetic sensor further includes: a source 210 located between the first raised portion and the cantilever beam 208; a drain 212 located between the second raised portion and the cantilever beam 208; a gate 214 located on a face of the recess opposite cantilever beam 208; the source 210, the drain 212 and the gate 214 are all used for being connected with a measuring circuit and transmitting electrical signals to the measuring circuit, and the measuring circuit is used for calculating field intensity information of a magnetic field to be measured according to the electrical signals of the source 210, the drain 212 and the gate 214.
Specifically, the strain force generated by the deformation of the magnetic layer 206 acts on the cantilever beam 208 through the medium layer, and the cantilever beam 208 deforms under the condition that the two ends of the cantilever beam 208 are fixedly connected with the medium layer. For example, the cantilever beam 208 becomes thin under the action of the strain force, the electrical characteristics of the cantilever beam 208 will change, and further, when the measurement circuit operates, the electrical signals generated by the source 210, the drain 212 and the gate 214 all change, so that the field strength information of the magnetic field to be measured can be calculated according to the change of the electrical signals.
In one embodiment, the dielectric layer comprises: a first dielectric layer 202 formed with an accommodating space; and a second dielectric layer 204 disposed on the first dielectric layer 202 and having a groove formed therein.
The materials of the two different dielectric layers can be selected differently to suit the requirements of the transistor with the gate 214, the source 210 and the drain 212. The material of each dielectric layer may be selected as described in the above embodiments, and is not described herein again.
In one embodiment, cantilevered beam 208 is a two-dimensional material. A two-dimensional material refers to a material in which electrons can move freely (planar motion) only in two dimensions on the nanometer scale (1-100 nm). The two-dimensional material may be selected from the specific materials exemplified in the above embodiments. The structure of the two-dimensional material is changed under the action of stress, so that the electrical properties or optical properties of the two-dimensional material are obviously changed, for example, the properties of light absorption spectrum, heat conductivity, electric conductivity and the like of the two-dimensional material are changed, and the field intensity information can be further determined by acquiring optical or electrical measurement signals through a measurement circuit.
Referring to fig. 4 and 5, the present invention further provides a magnetic field measurement system, including: a magnetic sensor 2 and a measuring circuit 1. The measuring circuit 1 is used for collecting a measuring signal generated by the magnetic sensor 2 under a magnetic field to be measured and calculating field intensity information of the magnetic field to be measured according to the measuring signal. The measurement signal is used to characterize the degree of deformation of the suspended portion.
Specifically, the measuring signal may be an optical signal or an electrical signal, and in an optical or electrical measuring manner, the specific compositions of the magnetic sensor 2 and the measuring circuit 1 are different.
Optionally, when the measurement signal is an optical signal, the measurement signal includes the first reflected light R1 and the second reflected light R2. The measurement circuit 1 includes: emitter 101 for projecting a beam of light onto the suspended portion of cantilever beam 208; the photoelectric converter 102 is configured to receive the first reflected light R1 and the second reflected light R2, and is configured to generate field strength information of the magnetic field to be measured according to the first reflected light R1 and the second reflected light R2; the first reflected light R1 is light reflected by the beam on the suspended portion; the second reflected light R2 is light reflected after the light beam passes through the suspended portion and the dielectric layer.
Please refer to fig. 4. Specifically, when measuring, after transmitter 101 projects a light beam onto the suspended portion of cantilever beam 208, a portion of the reflected light, i.e. first reflected light R1, is directly reflected from the suspended portion of cantilever beam 208; and the other part of the light, i.e., the second reflected light R2, is reflected from the bottom of the dielectric layer after passing through the suspended portion of the cantilever beam 208 and the dielectric layer. Interference occurs between the first reflected light R1 and the second reflected light R2, and an interference signal is collected by the photoelectric converter 102. Along with the deformation of the suspended part of the cantilever beam 208, the resonant frequency of the cantilever beam 208 changes the phase difference of the two beams of light, so that the interference signal acquired by the photoelectric converter 102 also changes, and the change condition of the resonant frequency of the cantilever beam 208 can be obtained according to the change of the interference signal.
By the optical measurement method, when the magnetic field to be measured changes, the field intensity information of the magnetic field to be measured can be measured according to the resonance frequency change curve of the cantilever beam 208. Specifically, the part of the resonant frequency which changes nonlinearly with the change of the magnetic field to be measured is removed, and only the part of the resonant frequency which changes linearly with the change of the magnetic field to be measured is reserved, so that the reserved part is called a characteristic region. The characteristic region is a working region of the magnetic sensor 2, and a magnetic field range corresponding to the working region is a magnetic field intensity range of the magnetic field to be measured, which is measured by the magnetic sensor 2.
Optionally, when the measurement signal is an electrical signal, the measurement circuit 1 includes a vector network analyzer 103; the medium layer still is formed with first bellying and second bellying in recess both sides, and magnetic sensor 2 still includes: a source 210 located between the first raised portion and the cantilever beam 208; a drain 212 located between the second raised portion and the cantilever beam 208; gate 214 on the face of the recess opposite cantilever beam 208; the vector network analyzer 103 is connected with the source 210, the drain 212 and the gate 214 respectively, and the vector network analyzer 103 calculates the field strength information of the magnetic field to be measured according to the electric signal of the source 210, the electric signal of the drain 212 and the electric signal of the gate 214.
Please refer to fig. 5. Specifically, during measurement, a direct current voltage is applied to the source 210 and the drain 212, a direct current bias is applied to the gate 214, a coupled alternating current voltage is applied, and the electric signals generated at the source 210, the drain 212 and the gate 214 are analyzed by the vector network analyzer 103. As the suspended portion of cantilever beam 208 deforms, the resonant frequency of cantilever beam 208 changes, the electrical signals generated at source 210, drain 212, and gate 214 all change, and the vector network can obtain the change of the resonant frequency of cantilever beam 208.
By the above electrical measurement method, when the magnetic field to be measured changes, the field strength information of the magnetic field to be measured can be measured according to the resonant frequency change curve of the cantilever beam 208. Specifically, the part of the resonant frequency which changes nonlinearly with the change of the magnetic field to be measured is removed, and only the part of the resonant frequency which changes linearly with the change of the magnetic field to be measured is reserved, so that the reserved part is called a characteristic region. The characteristic region is a working region of the magnetic sensor 2, and a magnetic field range corresponding to the working region is a magnetic field intensity range of the magnetic field to be measured, which is measured by the magnetic sensor 2.
As can be seen from the above description of the embodiments, in the embodiments of the present application, the magnetic sensor generates the measurement signal under the magnetic field to be measured, the magnitude of the measurement signal is related to the deformation of the suspended portion of the cantilever beam 208, the measurement signal is input into the measurement circuit to be calculated, so that the field intensity information of the magnetic field to be measured can be obtained, and the field intensity of the magnetic field to be measured can be accurately and efficiently measured according to the deformation of the suspended portion.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
All the possible combinations of the technical features of the embodiments described above may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.
Claims (7)
1. A magnetic sensor, comprising:
the dielectric layer is provided with an accommodating space and a groove which are oppositely arranged, and a first bulge part and a second bulge part are also formed on the two sides of the groove of the dielectric layer;
the magnetic layer is arranged in the accommodating space and deforms in a magnetic field to be measured to generate stress, and the stress and the field intensity of the magnetic field to be measured are in positive correlation;
the cantilever beam is arranged on the first protruding portion and the second protruding portion, a suspension portion is formed at the groove position by the cantilever beam, the suspension portion deforms under the stress action through the dielectric layer, and the deformation degree is used for representing the field intensity of the magnetic field to be measured;
a source electrode located between the first raised portion and the cantilever beam;
a drain electrode positioned between the second raised portion and the cantilever beam;
the grid is positioned on the surface of the groove opposite to the cantilever beam;
the source electrode, the drain electrode and the grid electrode are all used for being connected with a measuring circuit and transmitting electric signals to the measuring circuit, so that the measuring circuit calculates the field intensity information of the magnetic field to be measured according to the electric signals of the source electrode, the drain electrode and the grid electrode.
2. The magnetic sensor of claim 1, wherein the cantilever beam, the magneto layer, and the dielectric layer are all centrosymmetric structures, and a centrosymmetric point of the cantilever beam, a centrosymmetric point of the magneto layer, and a centrosymmetric point of the dielectric layer are located on a same straight line.
3. The magnetic sensor of claim 1, wherein the dielectric layer comprises:
the first medium layer is provided with the accommodating space;
and the second dielectric layer is arranged on the first dielectric layer and is provided with the groove.
4. The magnetic sensor of claim 3, wherein the first dielectric layer is a silicon material and/or the second dielectric layer is a silicon dioxide material.
5. The magnetic sensor of claim 1, wherein the cantilevered beam is a two-dimensional material.
6. A method of manufacturing a magnetic sensor, comprising:
providing a dielectric layer;
forming an accommodating space and a groove in the dielectric layer;
a first bulge and a second bulge are formed on two sides of the groove;
forming a magnetic layer in the accommodating space, wherein the magnetic layer deforms in a magnetic field to be detected to generate stress, and the stress and the field intensity of the magnetic field to be detected are in a positive correlation relationship;
forming a source electrode on the first protrusion portion;
forming a drain electrode on the second convex portion;
forming a grid on the surface of the groove opposite to the cantilever beam;
the cantilever beam is formed on the first protruding portion and the second protruding portion, the cantilever beam is located at the groove position to form a suspension portion, the suspension portion is deformed under the stress action through the medium layer, and the degree of deformation is used for representing the field intensity of the magnetic field to be measured.
7. A magnetic field measurement system comprising a magnetic sensor according to any one of claims 1 to 5, and a measurement circuit;
the measuring circuit is used for collecting a measuring signal generated by the magnetic sensor under a magnetic field to be measured and calculating field intensity information of the magnetic field to be measured according to the measuring signal;
the measurement signal is used for representing the deformation degree of the suspended part;
the measurement circuit comprises a vector network analyzer; the vector network analyzer is respectively connected with the source electrode, the drain electrode and the grid electrode, and the vector network analyzer calculates the field intensity information of the magnetic field to be measured according to the electric signal of the source electrode, the electric signal of the drain electrode and the electric signal of the grid electrode.
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| GB1154679A (en) * | 1967-03-13 | 1969-06-11 | Ncr Co | Magnetic Field Sensing Device. |
| JP4921185B2 (en) * | 2006-01-20 | 2012-04-25 | 国立大学法人 東京大学 | Manufacturing method of three-dimensional structure |
| KR20090001651A (en) * | 2007-05-08 | 2009-01-09 | 인하대학교 산학협력단 | The predictable program development for behavior of the self-modification mems machine |
| TWI513960B (en) * | 2013-05-20 | 2015-12-21 | Nat Univ Tsing Hua | A sensor chip having a micro inductor structure |
| EP3117195B1 (en) * | 2014-03-10 | 2019-11-06 | Qortek, Inc. | Non-contact magnetostrictive current sensor |
| CN106569152A (en) * | 2016-03-25 | 2017-04-19 | 中国计量学院 | Optical fiber cantilever beam magnetic field sensing probe based on giant magnetostrictive film |
| DE102018110511B3 (en) * | 2018-05-02 | 2019-05-16 | Christian-Albrechts-Universität Zu Kiel | Microwave resonator magnetic field measuring device and magnetic field measuring method |
| CN108957364A (en) * | 2018-07-04 | 2018-12-07 | 兰州大学 | A kind of magnetic field sensor and Measurement Method for Magnetic Field |
| CN111562526A (en) * | 2020-05-21 | 2020-08-21 | 中山科立特光电科技有限公司 | Cantilever beam type magnetic field detector based on magnetostrictive effect |
| CN212569097U (en) * | 2020-09-16 | 2021-02-19 | 中国计量大学 | Magnetic field sensor based on film bulk acoustic resonator |
| CN113241401B (en) * | 2021-04-19 | 2023-11-17 | 西北工业大学 | Multiferroic heterojunction magnetic sensor, preparation method thereof and electronic equipment |
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