CN115440866A - CSP packaging structure LED and LED packaging method - Google Patents
CSP packaging structure LED and LED packaging method Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 175
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 239000000843 powder Substances 0.000 claims description 55
- 238000005538 encapsulation Methods 0.000 claims description 38
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
- 239000003292 glue Substances 0.000 claims description 23
- 239000000741 silica gel Substances 0.000 claims description 20
- 229910002027 silica gel Inorganic materials 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 14
- 239000004408 titanium dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
The present disclosure relates to the technical field of LED packaging, and provides a CSP packaging structure LED and a method for packaging the LED, the CSP packaging structure LED comprising: an LED chip; the bottom light reflecting layer is coated on the periphery of the LED chip; the bottom light diffusion layer covers the top of the bottom light reflection layer and covers the periphery of the LED chip; the packaging layer covers the upper surface of the bottom light diffusion layer and covers the periphery and the upper part of the LED chip; the top light diffusion layer covers the packaging layer; and the top light reflection layer covers the top of the top light diffusion layer. The LED packaging structure enables light emitted by the LED chip to be LED out from the packaging layer on the side face quickly, can avoid the problem that the light emitted by the LED chip is absorbed due to repeated reflection in the packaging layer after being reflected vertically, and reduces light loss.
Description
Technical Field
The present disclosure relates to the field of LED packaging technologies, and more particularly, to a CSP packaging structure LED and a method for packaging the LED.
Background
In a Mini LED backlight product, the more back LEDs are, the denser the arrangement is, and the higher the control accuracy is, but based on cost consideration, it is necessary to ensure that each partition uses 1 LED as much as possible, so as to reduce the cost to the maximum extent. However, in order to meet the requirement of picture uniformity, the light emitting angle of the Mini LED needs to be larger as well as better. However, the light emitted by the conventional LED is lambertian, that is, the light intensity in the vertical direction of the chip is strongest, and if the light emitting angle of the LED is to be turned on, the light intensity in the vertical direction of the chip is lowered, and the light comes out from the side surface at the same time, so as to enhance the peripheral light emission, thereby achieving the effect of turning on the light emitting angle.
In order to achieve the above effects, the current technical solutions mainly have two kinds: firstly, a convex cup is dotted on a transparent packaging support to form a primary optical lens, and the light emitting angle of the LED is enlarged from 120 degrees to about 170 degrees through the lens. In practical application, the problem that the size of the convex cup is uncontrollable during manufacturing exists in the transparent support point convex cup, and the change of the light pattern is uncontrollable. Secondly, a reflection layer is added right above the CSP (abbreviation of Chip Size Package) or NCSP (abbreviation of Near Chip Size Package), most of the light on the front side is reflected back and emitted from the periphery, and the angle is opened. In practical application, the light-emitting rate can be greatly reduced by the reflective layer (the brightness is reduced by 30% -35% compared with that of the reflective layer), so that light emitted from the front surface is reflected repeatedly in the packaging body after being reflected vertically and is absorbed, and the light reflected from the front surface cannot be guided out from the periphery, thereby reducing the light loss.
Disclosure of Invention
The present disclosure is directed to providing a CSP structure LED and a method for packaging the LED, so as to solve the technical problem that the conventional LED cannot guide the light reflected from the front side out from the periphery.
In order to achieve the purpose, the technical scheme adopted by the disclosure is as follows:
according to a first aspect of embodiments of the present disclosure, the present disclosure provides a CSP package structure LED, including: an LED chip; the bottom light reflecting layer is coated on the periphery of the LED chip; the bottom light diffusion layer covers the bottom light reflection layer and covers the periphery of the LED chip; the packaging layer covers the upper surface of the bottom light diffusion layer and covers the periphery and the upper part of the LED chip; the top light diffusion layer covers the packaging layer; and the top light reflection layer covers the top of the top light diffusion layer.
In an alternative embodiment, the interfaces between the bottom light reflecting layer, the bottom light diffusing layer, the encapsulation layer, the top light diffusing layer and the top light reflecting layer are all planar.
In an alternative embodiment, the interfaces between the bottom light reflecting layer, the bottom light diffusing layer and the encapsulation layer are all planar; interfaces among the packaging layer, the top light diffusion layer and the top light reflection layer are all curved surfaces, and the curved surfaces are bent towards the direction close to the LED chip.
In an alternative embodiment, the bottom and top light diffusion layers are layers of white glue or silicone containing diffusing powders.
In an alternative embodiment, the bottom and top light diffusion layers are each 30-500 um thick.
In an optional embodiment, the encapsulation layer is a transparent silicone layer; or the packaging layer is a silica gel layer containing diffusion powder, and the proportion of the diffusion powder in the packaging layer is smaller than the proportion of the diffusion powder in the bottom light diffusion layer and the top light diffusion layer.
In an alternative embodiment, in the case that the encapsulation layer is a silica gel layer containing diffusion powder, the proportion of the diffusion powder in the encapsulation layer is less than 5%, and the proportion of the diffusion powder in the bottom light diffusion layer and the top light diffusion layer is 0.1% -10%.
In an alternative embodiment, the bottom light reflection layer and the top light reflection layer are a white glue layer or a silica gel layer containing diffusion powder, the proportion of the diffusion powder in the bottom light reflection layer is greater than or equal to that in the top light reflection layer, and the proportion of the diffusion powder in the top light reflection layer is 1% -50%.
In an alternative embodiment, the diffusing powder comprises solid particles of silica, titania, or a mixture of silica and titania.
In an alternative embodiment, the half-intensity angle of the CSP package structure LED comprises 180 °.
In an alternative embodiment, the CSP package structure LED further includes: the LED light source comprises a substrate, wherein the size of the surface of the substrate is the same as or close to that of an LED chip, the substrate is arranged below the LED chip, the LED chip is connected to the substrate in an inverted mode, and the substrate is in contact with a bottom light reflection layer.
According to a second aspect of the embodiments of the present disclosure, there is also provided another CSP package structure LED, including: an LED chip; the packaging layer is coated on the periphery and the upper part of the LED chip; the top light diffusion layer covers the packaging layer; a top light reflecting layer covering the top light diffusion layer; the interface among the packaging layer, the top light diffusion layer and the top light reflection layer is a curved surface which is bent towards the direction close to the LED chip.
According to a third aspect of the embodiments of the present disclosure, there is also provided an LED packaging method for preparing an LED of the CSP packaging structure, including: s101, covering a layer of white light reflecting layer material on the surface of a substrate in a printing mode, and then curing the white light reflecting layer material at a set temperature to form a bottom light reflecting layer; s102, covering a glue layer containing diffusion powder on a substrate covered with a white light-reflecting layer material through mould pressing, and then curing the glue layer at a set temperature to form a bottom light diffusion layer; s103, fixing the LED chip on the substrate, and performing circuit connection on the anode and the cathode of the LED chip and the anode and the cathode of the substrate; s104, after the LED chip is fixed, covering packaging silica gel around and above the LED chip in a mould pressing mode, and heating at a set temperature to solidify the packaging silica gel to form a packaging layer; s105, covering a glue layer containing diffusion powder on the packaging layer in a mould pressing mode, and then curing the glue layer at a set temperature to form a top light diffusion layer; s106, covering a layer of white light reflecting layer material on the surface of the top light diffusion layer in a mould pressing mode again, and then curing the white light reflecting layer material at a set temperature to form a top light reflecting layer to obtain the CSP packaging structure LED; and S107, finally, forming single LEDs by cutting.
The CSP packaging structure LED provided by the disclosure passes through an LED chip, a bottom light reflection layer, a bottom light diffusion layer, a packaging layer, a top light diffusion layer and a top light reflection layer, wherein the bottom light reflection layer is coated around the LED chip, the bottom light diffusion layer is coated on the bottom light reflection layer and coated around the LED chip, the packaging layer is coated on the bottom light diffusion layer and coated on the periphery and the upper part of the LED chip, the top light diffusion layer is coated on the packaging layer, the top light reflection layer is coated on the top light diffusion layer, the packaging layer emitted by the LED chip is vertically upwards spread through the packaging layer, the packaging layer and the top light diffusion layer are reflected and refracted to scatter at the interface, part of light enters the top light diffusion layer through refraction, the part of light is reflected to the interface between the bottom light diffusion layer and the packaging layer and is reflected and refracted to scatter at the interface, at the moment, part of light can be directly LED out of the packaging layer at the side of the LED chip through reflection, and part of light can not enter the bottom light diffusion layer through refraction, and can be LED back to the packaging layer again, and the problem of light reflection of the packaging layer can be avoided, and the LED chip can be repeatedly reflected back to the packaging layer, and the LED chip can be repeatedly absorbed in the packaging layer.
Drawings
To more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a CSP package structure LED provided by an embodiment of the present disclosure;
fig. 2 is a schematic optical path diagram of a CSP packaging structure LED provided by the embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional view of another CSP package structure LED provided by this disclosure;
fig. 4 is a first schematic cross-sectional view of another CSP package structure LED provided by this disclosure;
fig. 5 is a schematic cross-sectional view of another CSP packaging structure LED provided by the embodiment of the present disclosure;
fig. 6 is a schematic cross-sectional view of another CSP package structure LED provided by this disclosure;
fig. 7 is a schematic cross-sectional view of a CSP package structure LED according to an embodiment of the present disclosure.
Wherein, in the figures, the respective reference numerals:
| 1 | |
5 | Top |
| 2 | Bottom |
6 | Top |
| 3 | Bottom |
7 | |
| 4 | Encapsulation layer |
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present disclosure more clearly understood, the present disclosure is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the disclosure and are not intended to limit the disclosure.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.
Referring to fig. 1, the present embodiment provides a CSP structure LED, including: LED chip 1, bottom light reflection layer 3, bottom light diffusion layer 2, packaging layer 4, top light diffusion layer 5 and top light reflection layer 6, bottom light reflection layer 3 cladding is around LED chip 1, bottom light diffusion layer 2 covers on bottom light reflection layer 3, and the cladding is around LED chip 1, packaging layer 4 covers on bottom light diffusion layer 2, and the cladding is around and the top of LED chip 1, top light diffusion layer 5 covers on packaging layer 4, top light reflection layer 6 covers on top light diffusion layer 5.
The LED chip 1 may be a flip chip or a vertical chip, or a chip with a normal structure. In this embodiment, the LED chips 1 are preferably arranged by using flip chips.
It should be noted that the LED chip 1 may be a chip emitting blue light, white light, red light and green light, and in this embodiment, the LED chip 1 is preferably a blue LED chip 1 or a white LED chip 1. Further, the LED chip 1 may be rectangular in shape, such as rectangular or square; the shape of the LED chip 1 may also be circular, which is not limited by the embodiment of the present disclosure.
The principle of light propagation of the CSP package structure LED provided by this embodiment lies in: part of light emitted from the front surface of the LED chip 1 is refracted, sequentially penetrates through the packaging layer 4, the top light diffusion layer 5 and the top light reflection layer 6, and is emitted from the front surface of the LED chip 1; and the other part of light is refracted back to the packaging layer 4 by the top light reflection layer 6 and the top light diffusion layer 5 and is directly emitted from the side surface of the LED chip 1, or is refracted back to the bottom light diffusion layer 2 and the bottom light reflection layer 3 by the top light reflection layer 6 and the top light diffusion layer 5, and the bottom light diffusion layer 2 and the bottom light reflection layer 3 reflect and refract the refracted part of light back to the packaging layer 4 again and are emitted from the side surface of the LED chip 1, so that the light emitted from the front surface of the LED chip 1 is vertically reflected and then is not repeatedly reflected and absorbed in the packaging body, the light loss is reduced, more light is rapidly LED out from different angles of the side surface of the LED chip 1, and the light emitting angle of the LED is enlarged.
For example, referring to fig. 2, a beam of light L1 emitted from the LED chip 1 vertically propagates upward through the encapsulation layer 4, and is reflected and refracted at an interface between the encapsulation layer 4 and the top light diffusion layer 5 to be scattered, wherein a part of the light is refracted to enter the top light diffusion layer 5, a part of the light is reflected to an interface between the bottom light diffusion layer 2 and the encapsulation layer 4 and is reflected and refracted again at the interface to be scattered, at this time, a part of the light is directly guided out from the encapsulation layer 4 on the side of the LED chip 1 due to reflection, and a part of the light enters the bottom light diffusion layer 2 due to refraction and is reflected again at an interface between the bottom light diffusion layer 2 and the bottom light reflection layer 3 to return to the interface between the bottom light diffusion layer 2 and the encapsulation layer 4, and is refracted again to return to the inner encapsulation layer 4 and is guided out from the encapsulation layer 4 on the side of the LED chip 1. It can be seen that the light emitted from the LED chip 1 is vertically reflected and absorbed in the encapsulating layer 4 without being repeatedly reflected, and is rapidly guided out from the encapsulating layer 4 on the side surface of the LED chip 1.
In an experiment, a side lighting effect experiment is carried out on the CSP packaging structure LED and a general LED packaging structure, the maximum light emitting angle of the general LED packaging structure does not exceed 170 degrees, the maximum light emitting angle of the CSP packaging structure LED can reach 170 degrees to 180 degrees, and under the same OD (abbreviation of English Optical sensitivity, translated into Optical Density), the using number of Mini LEDs can be greatly reduced, so that the product cost is favorably reduced.
For example, in some applications, the half-intensity angle of the CSP package LED can be up to 180 ° at most. The side surface light emitting angle of the LED is in direct proportion to the half-intensity angle, namely the half-intensity angle is larger, the light emitting angle of the LED is larger, when the half-intensity angle is smaller, the light ratio of the upper side of the LED is brighter, and the light ratio of the side surface is weaker.
In one embodiment, as shown in connection with fig. 1, the interfaces between the bottom light reflecting layer 3, the bottom light diffusing layer 2, the encapsulating layer 4, the top light diffusing layer 5 and the top light reflecting layer 6 are all planar.
The light emitted by the LED chip 1 follows the light reflection law at different interfaces, and due to the existence of the bottom light diffusion layer 2 and the top light diffusion layer 5, the probability that the interfaces corresponding to the bottom light diffusion layer 2 and the top light diffusion layer 5 are rough planes is high, so that the probability that the light is reflected at different angles around the interface is increased, and the probability that the light emitted by the front surface of the LED chip 1 is vertically reflected back to the packaging layer 4 is reduced. That is, in the case that the interface between the bottom light reflection layer 3, the bottom light diffusion layer 2, the encapsulation layer 4, the top light diffusion layer 5, and the top light reflection layer 6 is a plane, the problem that light emitted from the front surface of the LED chip 1 is reflected perpendicularly back to the encapsulation layer 4 to be repeatedly reflected can be avoided, so that the light can be LED out from the side surface of the LED chip 1 quickly.
In one embodiment, as shown in connection with fig. 3, the interfaces between the bottom light reflecting layer 3, the bottom light diffusing layer 2 and the encapsulation layer 4 are all planar; interfaces among the packaging layer 4, the top light diffusion layer 5 and the top light reflection layer 6 are all curved surfaces, and the curved surfaces are bent towards the direction close to the LED chip 1.
The interface among the packaging layer 4, the top light diffusion layer 5 and the top light reflection layer 6 is constructed into a curved surface, so that a part of light emitted from the front surface of the LED chip 1 can be reflected at the interface between the packaging layer 4 and the top light diffusion layer 5 and directly emitted to the side surface of the LED, and the light guiding out is accelerated; in addition, under the action of the bottom light diffusion layer 2 and the bottom light reflection layer 3, another part of light emitted from the front surface of the LED chip 1 can be reflected vertically without being reflected internally by the encapsulation layer 4, and can be reflected by the interface between the encapsulation layer 4 and the top and bottom light diffusion layers 5 and 2, and emitted from the side surface of the LED. Preferably, the interface between the encapsulation layer 4, the top light diffusion layer 5 and the top light reflection layer 6 in this embodiment is an elliptic curved surface.
For example, referring to fig. 4, a beam of light L2 emitted from the LED chip 1 travels vertically upward through the encapsulation layer 4, and is reflected at the interface between the encapsulation layer 4 and the top light diffusion layer 5, wherein a part of the light is directly reflected out of the encapsulation layer 4, i.e. is rapidly guided out from the encapsulation layer 4 on the side of the LED chip 1.
For another example, referring to fig. 5, a beam of light L3 emitted from the LED chip 1 is vertically transmitted upward through the encapsulation layer 4, and is reflected at the interface between the encapsulation layer 4 and the top light diffusion layer 5, wherein a part of the light is reflected to the interface between the bottom light diffusion layer 2 and the encapsulation layer 4, and is reflected again at the interface, so as to be rapidly LED out from the encapsulation layer 4 on the side of the LED chip 1, and the horizontal angle of the LED-out light is large. Therefore, light emitted by the LED chip 1 can be rapidly LED out from the packaging layer 4 on the side surface of the LED chip 1 under the action of the interface which is a curved surface between the packaging layer 4 and the top light diffusion layer 5, and the light emitting angle of the LED can be further increased.
The embodiment rapidly guides the light emitted from the LED chip 1 out from the side surface through the curved interface among the encapsulation layer 4, the top light diffusion layer 5 and the top light reflection layer 6, and the curved interface can further enlarge the light emitting angle of the LED compared with the planar interface.
In one embodiment, the bottom light diffusion layer 2 and the top light diffusion layer 5 are layers of white glue or silicone glue containing diffusing powders.
The white glue layer and the silica gel layer can enable light to penetrate through the bottom light diffusion layer 2 and the top light diffusion layer 5, and the diffusion powder can increase the probability of scattering the light in different directions, so that the routes of the light vertically propagating relative to the front face of the LED chip 1 are changed, and the probability of the light being vertically reflected is reduced.
Specifically, the diffusing powder can diffuse light when propagating in the bottom light diffusion layer 2 and the top light diffusion layer 5, so that the light is diffused towards different directions, the probability that the light emitted from the front surface of the LED chip 1 is vertically reflected back to the packaging layer 4 can be reduced, and the light refracted back to the packaging layer 4 can be guided out from the side surface of the LED or can be angularly incident on the interface between the bottom light diffusion layer 2 and the packaging layer 4.
It is worth mentioning that the thickness of the bottom light diffusion layer 2 and the top light diffusion layer 5 is generally smaller than the thickness of the encapsulation layer 4, which may reduce the repeated reflection of light within the bottom light diffusion layer 2 and the top light diffusion layer 5. Preferably, the thickness of the bottom light diffusion layer 2 and the top light diffusion layer 5 in this embodiment is 30um-500um.
For example, the thickness of the bottom light diffusion layer 2 and the top light diffusion layer 5 may be 30um, 80um, 130um, 180um, 230um, 280um, 330um, 380um, 430um, 480um or 530um, or may be 50um, 100um, 150um, 200um, 250um, 300um, 350um, 400um, 450um or 500um, or any thickness value between any two thicknesses, which is not limited in the embodiments of the present disclosure.
In one embodiment, the encapsulation layer 4 is a transparent silicone layer; or the packaging layer 4 is a silica gel layer containing diffusion powder, and the proportion of the diffusion powder in the packaging layer 4 is smaller than that of the diffusion powder in the bottom light diffusion layer 2 and the top light diffusion layer 5.
When the encapsulating layer 4 is configured as a transparent silicone layer, it has a high light transmittance, so that the light emitted from the LED chip 1 can enter the top light diffusion layer 5 and the top light reflection layer 6 through the encapsulating layer 4, and the light reflected or refracted back into the encapsulating layer 4 can enter the bottom light diffusion layer 2 and the bottom light reflection layer 3.
When the encapsulating layer 4 is configured as a silica gel layer containing diffusion powder, the light emitted by the LED chip 1 can be diffused in an auxiliary manner, and the light can be effectively prevented from being repeatedly reflected in the encapsulating layer 4 when the light is vertically reflected in the encapsulating layer 4, so that the light loss is reduced.
The proportion of the diffusion powder in the packaging layer 4 is smaller than that of the diffusion powder in the bottom light diffusion layer 2 and the top light diffusion layer 5, so that light can be uniformly diffused, and the light emitting effect of the LED on the front side cannot be influenced. Preferably, the proportion of the diffusing powder in the encapsulating layer 4 is less than 5% in the present embodiment, and the proportion of the diffusing powder in the bottom light diffusion layer 2 and the top light diffusion layer 5 is 0.1% -10%.
For example, the proportion of the light-diffusing powder in the encapsulating layer 4 may be 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, or the like, or may be other proportion values between any two of the foregoing proportions; the ratio of the diffusion powder in the bottom light diffusion layer 2 and the top light diffusion layer 5 may be 0.1%, 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, 6.5%, 7.0%, 7.5%, 8.0%, 8.5%, 9.0%, 9.5%, or 10%, or may be other ratio values between any two ratios, which is not limited in the embodiment of the present disclosure.
In one embodiment, the bottom light reflecting layer and the top light reflecting layer are a white glue layer or a silica gel layer containing diffusion powder, the proportion of the diffusion powder in the bottom light reflecting layer is greater than or equal to that in the top light reflecting layer, and the proportion of the diffusion powder in the top light reflecting layer is 1% -50%.
The top light reflecting layer 6 not only needs to reflect a part of light emitted from the front surface of the LED chip 1 back to the encapsulation layer 4, but also needs to allow a part of light emitted from the front surface of the LED chip 1 to pass through the top light reflecting layer 6 and be emitted outward. Therefore, the top light reflection layer 6 in this embodiment is preferably a white glue layer or a silica gel layer containing diffusion powder. The bottom light reflecting layer 3 does not need to transmit light. Therefore, in the present embodiment, the ratio of the diffusion powder in the bottom light reflection layer 3 is preferably equal to or greater than the ratio of the diffusion powder in the top light reflection layer 6.
For example, the proportion of the diffusion powder in the top light reflection layer 6 may be 1%, 4%, 7%, 10%, 13%, 16%, 19%, 22%, 25%, 28%, 31%, 35%, 38%, 41%, 44%, 47%, 50%, or the like, or may be other proportion values between any two of the foregoing proportions, which is not limited by the embodiment of the present disclosure.
In one embodiment, the diffusion powder comprises solid particles of silica, titania, or a mixture of silica and titania.
Among them, both silica and titania are white solid or powder, which are very excellent optical materials, and particularly, titania has the best opacity, the best whiteness and brightness. Light refraction and reflection, etc. occur at the surface of the silica and titania particles. Therefore, in this embodiment, the silicon dioxide and the titanium dioxide may be used as the light diffusion materials of the top light diffusion layer, the bottom light diffusion layer and the encapsulation layer, or as the light reflection materials of the top light reflection layer and the bottom light reflection layer, for example, a thin silicon dioxide or/and titanium dioxide layer may be covered on the top light reflection layer and the bottom light reflection layer to reflect light as a white light reflection material layer.
In addition, the silicon dioxide and the titanium dioxide have certain light transmittance, and for the bottom light reflection layer 3, the bottom light diffusion layer 2, the encapsulation layer 4, the top light diffusion layer 5 and the top light reflection layer 6, in the case that the silicon dioxide or/and the titanium dioxide are contained as diffusion powder, the light emitted by the LED chip 1 can not only penetrate through the bottom light diffusion layer 2, the encapsulation layer 4, the top light diffusion layer 5 and the top light reflection layer 6, but also can be emitted and refracted to be transmitted to different directions around when the light hits on the silicon dioxide or/and the titanium dioxide, so as to play a role of diffusing the light.
Specifically, besides the solid particles of silicon dioxide, titanium dioxide or a mixture of silicon dioxide and titanium dioxide, the diffusion powder may also be made of other materials, which is not limited in the embodiment of the disclosure.
Referring to fig. 6, the present embodiment further provides a CSP structure LED, compared to the CSP structure LED in fig. 1, the CSP structure LED in the present embodiment further includes a substrate 7, the size of the substrate 7 is the same as or close to that of the LED chip 1, the substrate 7 is disposed below the LED chip 1, the LED chip 1 is flip-chip connected to the substrate 7, and the substrate 7 is in contact with the bottom light reflection layer 3.
In this embodiment, the LED chip 1 is preferably in a flip-chip structure, and the flip-chip LED chip 1 may be soldered on the substrate 7 by a eutectic soldering technique, and compared with the CSP packaging structure, the LED obtained in this embodiment is the NCSP packaging structure LED under the condition that the substrate 7 is added, so that the packaging structure of the LED can be miniaturized.
In addition, the present embodiment provides an LED packaging method for preparing the CSP packaging structure LED shown in fig. 1, which includes:
step S101, covering a layer of white light reflecting layer material on the surface of a substrate 7 in a printing mode, and then curing the white light reflecting layer material at a set temperature to form a bottom light reflecting layer 3;
step S102, covering a glue layer containing diffusion powder on the substrate 7 covered with the white light-reflecting layer material through mould pressing, and then curing the glue layer at a set temperature to form a bottom light diffusion layer 2;
step S103, fixing the LED chip 1 on the substrate 7, and performing circuit connection between the anode and the cathode of the LED chip 1 and the anode and the cathode of the substrate 7;
step S104, after the LED chip 1 is fixed, covering packaging silica gel around and above the LED chip 1 in a mould pressing mode, and heating at a set temperature to solidify the packaging silica gel to form a packaging layer 4;
step S105, covering a glue layer containing diffusion powder on the packaging layer 4 in a mould pressing mode, and then curing the glue layer at a set temperature to form a top light diffusion layer 5;
step S106, covering a layer of white reflective layer material on the surface of the top light diffusion layer 5 by a mould pressing mode again, and then curing the white reflective layer material at a set temperature to form a top light reflection layer 6, so as to obtain the CSP packaging structure LED shown in the figure 1;
and step S107, finally, forming single LEDs by cutting.
Specifically, the white reflective layer material in the present embodiment may be the same material as the diffusion powder, for example, the white reflective layer material is preferably silica or/and titanium dioxide fixed particles.
Referring to fig. 7, the present embodiment provides a CSP structure LED, including: LED chip 1, packaging layer 4, top light diffusion layer 5 and top light reflection layer 6, packaging layer 4 cladding is around and the top of LED chip 1, and top light diffusion layer 5 covers on packaging layer 4, and top light reflection layer 6 covers on top light diffusion layer 5, and the interface between packaging layer 4, top light diffusion layer 5 and top light reflection layer 6 each other is the curved surface, and the curved surface is crooked to being close to LED chip 1 direction.
In the embodiment, the top light diffusion layer 5 and the top light reflection layer 6 are arranged above the LED chip 1, and the interface among the encapsulation layer 4, the top light diffusion layer 5 and the top light reflection layer 6 is a curved surface, so that light emitted from the front surface of the LED chip 1 is reflected and refracted at the curved interface, the light is guided out from the side surface of the LED chip 1, and the light emitting angle of the LED can be effectively enlarged; in addition, the interface with the curved surface above the LED chip 1 can also avoid the problem that the light emitted from the front surface of the LED chip 1 is absorbed by being reflected back into the encapsulation layer 4 vertically and repeatedly, thereby reducing the light loss.
It should be noted that specific configurations and implementations of the LED chip 1, the package layer 4, the top light diffusion layer 5, and the top light reflection layer 6 in this embodiment can be referred to the above embodiments, and the optical path propagation effect of the CSP package structure LED provided in this embodiment can be referred to fig. 4 and fig. 5, which are not described herein again.
In addition, the embodiment also provides an LED packaging method for preparing the CSP packaging structure LED shown in fig. 7, which includes:
step S201, forming a semi-elliptical white reflective layer material lens in a dispensing mode, and then curing the lens at a set temperature to form a top light diffusion layer 5;
step S202, covering a glue layer containing diffusion powder on the lens covered with the white light-reflecting layer material in a mould pressing mode, and then curing the glue layer at a set temperature to form a top light diffusion layer 5;
step S203, arranging the LED chips 1 on a carrier plate;
step S204, covering packaging silica gel around and above the LED chip 1 in a mould pressing mode, and then heating at a set temperature to solidify the packaging silica gel to form a packaging layer 4;
step S205, covering the white reflective lens covered with the top light diffusion layer 5 on the packaging layer 4 to obtain the CSP packaging structure LED shown in fig. 7;
and step S206, finally, forming single LEDs by cutting.
Specifically, the white reflective layer material in the present embodiment may be the same material as the diffusion powder, for example, the white reflective layer material is preferably silica or/and titanium dioxide fixed particles.
The present disclosure is to be considered as limited only by the preferred embodiments and not limited to the specific embodiments described herein, and all changes, equivalents and modifications that come within the spirit and scope of the disclosure are desired to be protected.
Claims (13)
1. A CSP package structure LED, comprising:
an LED chip;
the bottom light reflecting layer is coated on the periphery of the LED chip;
the bottom light diffusion layer covers the top surface of the bottom light reflection layer and covers the periphery of the LED chip;
the packaging layer covers the upper surface of the bottom light diffusion layer and covers the periphery and the upper part of the LED chip;
a top light diffusion layer covering the encapsulation layer;
and the top light reflection layer covers the top of the top light diffusion layer.
2. The CSP packaged structure LED of claim 1 wherein the interfaces between the bottom light reflecting layer, the bottom light diffusing layer, the encapsulant layer, the top light diffusing layer, and the top light reflecting layer are all planar.
3. The CSP packaged structure LED of claim 1 wherein the interfaces between said bottom light reflecting layer, said bottom light diffusing layer and said encapsulant layer are all planar;
interfaces among the packaging layer, the top light diffusion layer and the top light reflection layer are all curved surfaces, and the curved surfaces are bent towards the direction close to the LED chip.
4. The CSP package structure LED of claim 1, wherein the bottom and top light diffusion layers are white glue or silica gel layers containing diffusing powder.
5. The CSP package structure LED of claim 4, wherein the bottom and top light diffusion layers are each 30-500 um thick.
6. The CSP package structure LED as claimed in claim 4, wherein the packaging layer is a transparent silicone layer;
or the packaging layer is a silica gel layer containing diffusion powder, and the proportion of the diffusion powder in the packaging layer is smaller than the proportion of the diffusion powder in the bottom light diffusion layer and the top light diffusion layer.
7. The CSP package structure LED as claimed in claim 6, wherein in the case that the package layer is a silica gel layer containing diffusion powder, the proportion of the diffusion powder in the package layer is less than 5%, and the proportion of the diffusion powder in the bottom light diffusion layer and the top light diffusion layer is 0.1% -10%.
8. The CSP package structure LED as claimed in claim 4, wherein the bottom light reflection layer and the top light reflection layer are a white glue layer or a silica gel layer containing diffusion powder, the ratio of the diffusion powder in the bottom light reflection layer is greater than or equal to that in the top light reflection layer, and the ratio of the diffusion powder in the top light reflection layer is 1% -50%.
9. The CSP package structure LED according to any of the claims 4-8, wherein the diffusion powder comprises solid particles of silicon dioxide, titanium dioxide or a mixture of silicon dioxide and titanium dioxide.
10. The CSP package structure LED according to any of claims 1-8 wherein the half-intensity angle of said CSP package structure LED comprises 180 °.
11. The CSP package structure LED as recited in any one of claims 1 to 8, further comprising:
the size of the surface of the substrate is the same as or close to that of the LED chip, the substrate is arranged below the LED chip, the LED chip is connected to the substrate in an inverted mode, and the substrate is in contact with the bottom light reflection layer.
12. A CSP package structure LED, comprising:
an LED chip;
the packaging layer is coated on the periphery and the upper part of the LED chip;
a top light diffusion layer covering the encapsulation layer;
a top light reflecting layer covering the top of the top light diffusion layer;
the interface among the packaging layer, the top light diffusion layer and the top light reflection layer is a curved surface, and the curved surface is bent towards the direction close to the LED chip.
13. An LED packaging method for preparing the CSP packaging structure LED as claimed in any one of claims 1-11, comprising:
s101, covering a layer of white light reflecting layer material on the surface of a substrate in a printing mode, and then curing the white light reflecting layer material at a set temperature to form a bottom light reflecting layer;
s102, covering a glue layer containing diffusion powder on a substrate covered with a white light-reflecting layer material through mould pressing, and then curing the glue layer at a set temperature to form a bottom light diffusion layer;
s103, fixing the LED chip on the substrate, and performing circuit connection on the anode and the cathode of the LED chip and the anode and the cathode of the substrate;
s104, after the LED chip is fixed, covering packaging silica gel around and above the LED chip in a mould pressing mode, and heating at a set temperature to solidify the packaging silica gel to form a packaging layer;
s105, covering a glue layer containing diffusion powder on the packaging layer in a mould pressing mode, and then curing the glue layer at a set temperature to form a top light diffusion layer;
s106, covering a layer of white light reflecting layer material on the surface of the top light diffusion layer in a mould pressing mode again, and then curing the white light reflecting layer material at a set temperature to form a top light reflecting layer to obtain the CSP packaging structure LED;
and S107, finally, forming single LEDs by cutting.
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| CN202211196868.4A CN115440866A (en) | 2022-09-29 | 2022-09-29 | CSP packaging structure LED and LED packaging method |
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| CN202211196868.4A CN115440866A (en) | 2022-09-29 | 2022-09-29 | CSP packaging structure LED and LED packaging method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116779744A (en) * | 2023-06-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Chip-level LED packaging element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116779744A (en) * | 2023-06-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Chip-level LED packaging element |
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