CN115440853A - Preparation method of solar photovoltaic cell - Google Patents

Preparation method of solar photovoltaic cell Download PDF

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CN115440853A
CN115440853A CN202211213637.XA CN202211213637A CN115440853A CN 115440853 A CN115440853 A CN 115440853A CN 202211213637 A CN202211213637 A CN 202211213637A CN 115440853 A CN115440853 A CN 115440853A
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type silicon
silicon wafer
layer
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laser
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祁嘉铭
刘泉
陈太昌
方贵允
陈家健
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Dongguan Csg Photovoltaic Technology Co ltd
CSG Holding Co Ltd
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Dongguan Csg Photovoltaic Technology Co ltd
CSG Holding Co Ltd
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Abstract

The application discloses a preparation method of a solar photovoltaic cell, in particular to the technical field of photovoltaic cells, and the preparation method of the solar photovoltaic cell according to the embodiment of the application comprises the following steps: texturing the front side and the back side of the N-type silicon wafer; carrying out phosphorus diffusion on the front side and the back side of the textured N-type silicon wafer to obtain N + regions of the front side and the back side of the N-type silicon wafer; performing alkali polishing on the back of the N-type silicon wafer after phosphorus diffusion; oxidizing the back of the N-type silicon wafer after alkali polishing to form a tunneling oxide layer and an N + doped polycrystalline silicon layer; performing laser grooving on the n + doped polycrystalline silicon layer in a laser etching mode; and printing and co-firing the N-type silicon chip on which the antireflection film is deposited to form a p + region and positive and negative electrodes so as to form the solar photovoltaic cell. The preparation method of the solar photovoltaic cell effectively simplifies the preparation steps of the TBC cell and improves the production efficiency of the TBC cell.

Description

Preparation method of solar photovoltaic cell
Technical Field
The application relates to the technical field of photovoltaic cells, in particular to a preparation method of a solar photovoltaic cell.
Background
With the development of photovoltaic technology, the electricity consumption cost is continuously reduced and depends on the manufacturing cost and the battery conversion efficiency, the continuous improvement of the battery conversion efficiency and the continuous reduction of the manufacturing cost can greatly reduce the photovoltaic power generation cost, and the large-scale commercial application of photovoltaic power is promoted. The TBC (tunneled Passivated Contact Back Contact) battery is widely used because of its good passivation effect, but the current TBC battery preparation process involves complex processes and numerous steps, so that the TBC battery preparation process has a high requirement on preparation, resulting in a high rejection rate and a reduced TBC battery production efficiency.
Disclosure of Invention
The present application is directed to solving at least one of the problems in the prior art. Therefore, the preparation method of the solar photovoltaic cell is provided, so that the preparation steps of the TBC cell are effectively simplified, and the production efficiency of the TBC cell is improved.
The preparation method of the solar photovoltaic cell according to the embodiment of the application comprises the following steps:
texturing the front side and the back side of the N-type silicon wafer;
carrying out phosphorus diffusion on the front side and the back side of the N-type silicon wafer after texturing to obtain N + regions of the front side and the back side of the N-type silicon wafer;
performing alkali polishing on the back surface of the N-type silicon wafer after phosphorus diffusion;
oxidizing the back surface of the N-type silicon wafer after alkali polishing to form a tunneling oxide layer and an N + doped polycrystalline silicon layer;
performing laser grooving on the n + doped polycrystalline silicon layer in a laser etching mode;
removing the damaged layer on the back of the N-type silicon wafer, the N + region of the laser region and the glass layers on the front side and the back side after laser grooving by a chemical corrosion method;
depositing a passivation film on the N + doped polycrystalline silicon layer of the N-type silicon wafer after chemical corrosion;
depositing antireflection films on the N + region on the front side of the N-type silicon wafer after the passivation film is deposited and the passivation film on the back side of the N-type silicon wafer;
and printing and co-firing the N-type silicon chip on which the antireflection film is deposited to form a p + region, a positive electrode and a negative electrode, so as to form the solar photovoltaic cell.
The preparation method of the solar photovoltaic cell according to the embodiment of the application has at least the following beneficial effects: according to the method, the laser energy is controlled by adopting a laser etching mode, and by adopting the laser energy with lower power, the damage of laser to an N + doped polycrystalline silicon layer is reduced while an N + region with too high doping concentration is avoided, the heavy doping concentration and the depth of phosphorus in the laser process are also reduced, the N-type silicon wafer does not need to be cleaned for many times in the preparation process, the complex process of the prior art is effectively simplified, and the production efficiency of the TBC battery is improved.
According to some embodiments of the present application, the alkali polishing the back surface of the N-type silicon wafer after the phosphorus diffusion comprises:
removing the phosphorosilicate glass layer on the back of the N-type silicon wafer after phosphorus diffusion through chain type equipment;
and polishing the back surface of the N-type silicon wafer with the phosphorosilicate glass layer removed by adopting sodium hydroxide or potassium hydroxide.
According to some embodiments of the present application, the oxidizing the back surface of the N-type silicon wafer after the alkali polishing to form a tunneling oxide layer and an N + doped polysilicon layer includes:
preparing in-situ doped polycrystalline silicon by a plasma enhanced chemical vapor deposition method, so that the N + doped polycrystalline silicon layer is formed on the back surface of the N-type silicon wafer after the polycrystalline silicon is subjected to alkali polishing;
and introducing oxygen into the equipment for preparing the N + doped polycrystalline silicon layer to form the tunneling oxide layer on the back surface of the N-type silicon wafer so as to protect the N + doped polycrystalline silicon layer.
According to some embodiments of the present application, the laser grooving of the n + doped polysilicon layer by laser etching includes:
controlling the power of the laser to be 7.0 w-8.0 w, and performing laser grooving on the n + doped polycrystalline silicon layer in a laser etching mode to enable the thickness of the n + doped polycrystalline silicon layer after laser grooving to be larger than or equal to 50nm.
According to some embodiments of the present application, the laser has a spot diameter of 90um to 120um.
According to some embodiments of the present application, the removing the damaged layer on the back surface of the N-type silicon wafer, the N + region of the laser region, and the glass layers on the front and back surfaces after laser grooving by a chemical etching method includes:
controlling the temperature to be within a range from 40 ℃ to 50 ℃, and removing a damaged layer on the back surface of the N-type silicon wafer and an N + region of a laser region through sodium hydroxide or potassium hydroxide, wherein the mass fraction of the sodium hydroxide or the potassium hydroxide is 3% -6%;
and removing the phosphorosilicate glass layer and the borosilicate glass layer on the front side and the back side of the N-type silicon wafer through hydrofluoric acid, wherein the glass layer comprises the phosphorosilicate glass layer and the borosilicate glass layer.
According to some embodiments of the application, the depositing a passivation film on the N + doped polysilicon layer of the N-type silicon wafer after the chemical etching comprises:
and plating aluminum oxide on the back surface of the N-type silicon wafer by a plasma enhanced chemical vapor deposition method or an atomic layer deposition method, so that a passivation film is deposited on the N + doped polycrystalline silicon layer of the N-type silicon wafer after chemical corrosion.
According to some embodiments of the present application, the depositing an antireflection film on the passivation films of the N + region on the front surface and the passivation film on the back surface of the N-type silicon wafer after depositing the passivation film comprises:
and plating silicon nitride on the front surface and the back surface of the N-type silicon wafer by a plasma enhanced chemical vapor deposition method, so that the antireflection films are deposited on the N + region on the front surface and the passivation film on the back surface of the N-type silicon wafer after the passivation film is deposited.
According to some embodiments of the present application, the printing and co-firing the N-type silicon wafer after the deposition of the anti-reflection film to form a p + region and positive and negative electrodes includes:
printing boron-containing aluminum paste at the laser grooving position of the N-type silicon wafer after the antireflection film is deposited;
printing high-viscosity conductive silver paste on the N + doped polycrystalline silicon layer on the back of the N-type silicon wafer;
and co-firing the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon chip to form a p + region and positive and negative electrodes.
According to some embodiments of the application, the co-firing of the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon wafer to form the p + region and the positive and negative electrodes comprises:
and co-firing the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon chip, and controlling the co-firing temperature to be in a range from 680 ℃ to 720 ℃, so that boron in the boron-containing aluminum paste is doped into the N-type silicon chip to form the p + region, and the aluminum paste and the silver paste form a positive electrode and a negative electrode respectively.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a solar photovoltaic cell according to some embodiments of the present disclosure.
Reference numerals are as follows: an N-type silicon wafer 100; an n + front surface field 200; a tunneling oxide layer 300; an n + doped polysilicon layer 400; a passivation film 500; a front side antireflection film 610; a back side antireflection film 620; a p + region 700; a silver grid line 800; an aluminum grid line 900.
Detailed Description
Reference will now be made in detail to the embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it is to be understood that the positional descriptions, such as the directions of up, down, front, rear, left, right, etc., referred to herein are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present application.
In the description of the present application, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and larger, smaller, larger, etc. are understood as excluding the present number, and larger, smaller, inner, etc. are understood as including the present number. If there is a description of first and second for the purpose of distinguishing technical features only, this is not to be understood as indicating or implying a relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of technical features indicated.
In the description of the present application, unless otherwise expressly limited, terms such as set, mounted, connected and the like should be construed broadly, and those skilled in the art can reasonably determine the specific meaning of the terms in the present application by combining the detailed contents of the technical solutions.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a solar photovoltaic cell provided in some embodiments of the present application; it can be understood that the preparation method of the solar photovoltaic cell comprises the following steps: texturing the front side and the back side of the N-type silicon wafer 100; performing phosphorus diffusion on the front and back sides of the textured N-type silicon wafer 100 to obtain N + regions on the front and back sides of the N-type silicon wafer 100; performing alkali polishing on the back of the N-type silicon wafer 100 after phosphorus diffusion; oxidizing the back surface of the N-type silicon wafer 100 after the alkali polishing to form a tunneling oxide layer 300 and an N + doped polysilicon layer 400; performing laser grooving on the n + doped polysilicon layer 400 in a laser etching mode; removing a damaged layer on the back surface of the N-type silicon wafer 100 subjected to laser grooving, an N + region of a laser region and glass layers on the front side and the back side by a chemical corrosion method; depositing a passivation film 500 on the N + doped polycrystalline silicon layer 400 of the N-type silicon wafer 100 after the chemical etching; depositing an antireflection film on the N + region on the front side of the N-type silicon wafer 100 and the passivation film 500 on the back side after the passivation film 500 is deposited; and printing and co-firing the N-type silicon chip 100 on which the antireflection film is deposited to form a p + region 700 and positive and negative electrodes, so as to form the solar photovoltaic cell.
It should be noted that, the conventional TBC solar photovoltaic cell is prepared by using an N-type silicon wafer 100 as a substrate material and performing double-sided polishing, polysilicon deposition, mask deposition, single-sided texturing, laser etching and grooving, phosphorus diffusion, phosphorus-removed silica glass and a mask, p-type doping, passivation layer preparation, front-side antireflection film 610, and screen printing and sintering, and the whole process involves a large number of process steps, and because the p + doping region is prepared and applied to the mask, coating, doping source printing and other modes, the complexity of the process is increased, so that the difficulty of the preparation process and quality management is high, the rejection rate is also high, and the commercial production is not facilitated.
The existing technical scheme includes that an N-type silicon wafer 100 is used as a substrate material, double-sided polishing is carried out on the N-type silicon wafer 100, polycrystalline silicon is deposited on the back surface of the N-type silicon wafer 100, silicon oxide or silicon nitride is used as a mask to protect a polycrystalline silicon structure on the back surface, texturing is carried out on the front surface of a battery to form surface texturing, laser grooving is carried out on the back surface of the N-type silicon wafer 100 to prepare a back contact structure, high-temperature phosphorus diffusion is adopted to prepare a double-sided N + region, a phosphorosilicate glass layer, a silicon oxide mask and a silicon nitride mask which are formed during phosphorus removal diffusion are washed away through chemical cleaning, a boron-containing source is coated or printed on the back surface of the N-type silicon wafer 100, a p + region 700 is formed through laser doping, a boron-containing doped layer is removed through cleaning after the p + region 700 is prepared, aluminum oxide is plated on the front surface of the N-type silicon wafer 100, silicon nitride is plated on the front surface and the back surface of the N-type silicon wafer 100 to increase surface passivation and antireflection effects of the battery, and a metallized electrode is prepared through printing and sintering. Specifically, in the prior art, a p-type doping source printing technology and a p-type doping source cleaning technology are adopted, so that the process complexity is increased, the problems of liquid medicine residue, difficulty in cleaning the p-type doping source after laser high-temperature melting and the like easily occur in the preparation process, and the product degradation is caused. Moreover, single-side texturing is adopted in the preparation process, so that the requirement on the quality of a mask is high, otherwise, the polycrystalline silicon structure is damaged by alkali liquor, and the passivation effect is influenced; meanwhile, the damaged layer is not cleaned after the back surface is grooved, so that the doping effect of an n + region is influenced, the surface recombination rate is too high, and the conversion efficiency of the cell is influenced.
The surface of the N-type silicon wafer 100 described herein includes the front surface of the N-type silicon wafer 100 and the back surface of the N-type silicon wafer 100.
It should be noted that, in order to effectively reduce the preparation cost of the TBC battery and improve the yield and conversion efficiency of the TBC battery, the present application improves the TBC battery on the basis of the prior art, and the specific process of the preparation method of the solar photovoltaic battery of the present application is as follows: firstly, texturing the front and back sides of an N-type silicon wafer 100 by using sodium hydroxide or potassium hydroxide, removing surface damage of the N-type silicon wafer 100 to form surface texturing so as to reduce the surface reflectivity of the silicon wafer and increase light absorption, then performing high-temperature phosphorus diffusion on the textured N-type silicon wafer 100 to prepare N + regions of the front and back sides of the N-type silicon wafer 100, and then performing alkali polishing on the back side of the N-type silicon wafer 100 after phosphorus diffusion so as to facilitate the subsequent preparation of a solar photovoltaic cell; then, oxidizing the back surface of the N-type silicon wafer 100 after alkali polishing to form a tunneling oxide layer 300 and an N + doped polycrystalline silicon layer 400, wherein the tunneling oxide layer 300 is in passivation contact with a passivation structure for a crystalline silicon solar cell and is mainly used for passivating the surface of the cell, and the N + doped polycrystalline silicon layer 400 deposited on the front surface and the back surface is protected to avoid damage to the N + doped polycrystalline silicon layer 400 when a damage layer caused by laser etching is removed subsequently; after the tunneling oxide layer 300 and the n + doped polycrystalline silicon layer 400 are prepared, the n + doped polycrystalline silicon layer 400 needs to be subjected to laser grooving in a laser etching mode, and low-frequency and low-power laser is adopted to reduce laser impact, so that the n + region with too high doping depth is prevented from being formed, and meanwhile, the damage of the laser to the n + doped polycrystalline silicon layer 400 is reduced; after laser grooving is carried out on the N + doped polycrystalline silicon layer 400 on the back surface of the N-type silicon wafer 100, a damaged layer on the back surface, an N + region of a laser region and a glass layer, which are caused by laser etching, need to be removed by a chemical corrosion method; after the removal operation is performed, a passivation film 500 needs to be deposited on the N + doped polysilicon layer 400 on the back side of the N-type silicon wafer 100, and antireflection films need to be deposited on the passivation films 500 on the front side and the back side of the N-type silicon wafer 100, so that the light transmittance is increased, and the photoelectric efficiency of the cell is improved; after the passivation film 500 and the antireflection film are deposited, the N-type silicon wafer 100 needs to be printed, and aluminum paste and silver paste printed on the N-type silicon wafer 100 are co-fired in a firing manner, so that boron in the aluminum paste is doped into the silicon wafer body to form a p + region 700, and then a solar photovoltaic cell is formed, wherein the aluminum paste and the silver paste form positive and negative electrodes of the solar photovoltaic cell respectively.
Specifically, the preparation method of the solar photovoltaic cell not only omits multiple processes such as mask and boron-doped amorphous silicon deposition by innovating a p + region 700 region doping technology, reduces the process flow and difficulty of back contact structure preparation, reduces the metal composite area and composite rate of the p + region 700 region by utilizing an advanced metal passivation technology, but also adopts a laser etching mode, reduces the damage of laser to a polycrystalline silicon structure by controlling laser energy, reduces the heavy doping concentration and depth of phosphorus in the laser process, removes a damaged layer and an n + region of the laser region by a chemical corrosion mode, so that the p + region 700 in the TBC cell is prepared at the laser etching position by adopting a printing and infrared co-firing mode in the subsequent region, simplifies the complex process of the prior art, reduces the preparation cost of the solar photovoltaic cell, and improves the yield and conversion efficiency of the solar photovoltaic cell.
According to an embodiment of the present application, referring to fig. 1, a front surface of an n-type silicon wafer 100 is prepared with an n + front surface field 200 and a front surface antireflection film 610, a back surface of the n-type silicon wafer 100 is prepared with a tunneling oxide layer 300, an n + doped polysilicon layer 400, a p + region 700, a passivation film 500 and a back surface antireflection film 620, and the back surface is further provided with aluminum gate lines 900 and silver gate lines 800, which respectively form positive and negative electrodes of the solar photovoltaic cell of the present application.
It is understood that the back side of the p-diffused N-type silicon wafer 100 is subjected to alkali polishing, including: removing the phosphorosilicate glass layer on the back of the N-type silicon wafer 100 after phosphorus diffusion through chain equipment; and (3) polishing the back surface of the N-type silicon wafer 100 with the phosphorosilicate glass layer removed by adopting sodium hydroxide or potassium hydroxide.
In the application, phosphorus diffusion is performed on the front side and the back side of the N-type silicon wafer 100, the N-type silicon wafer 100 is placed in a diffusion furnace, P-type impurity atoms are diffused from the surface layer of the silicon wafer to the inside of the silicon wafer through gaps among silicon atoms to form a PN junction, electrons and holes do not return to the original position after flowing, and a current is formed, so that the N-type silicon wafer 100 has a photovoltaic effect. However, after phosphorus is diffused to the N-type silicon wafer 100, silicon oxide is generated on the front and back surfaces of the N-type silicon wafer 100, and the silicon oxide and the phosphorus oxide form phosphorosilicate glass, the contact between the metal electrode and the silicon wafer is affected in the electrode printing process due to the existence of the glass layer, so that the conversion efficiency of the battery is reduced, meanwhile, the minority carrier lifetime is reduced due to the fact that the glass layer also contains various metal ion magazines, so that a chain type device is needed to remove the phosphorosilicate glass layer on the back surface of the N-type silicon wafer 100, the contact between the metal electrode and the N-type silicon wafer 100 is prevented from being affected due to the existence of the phosphorosilicate glass layer, and the conversion efficiency of the solar photovoltaic battery is improved. And the back of the N-type silicon wafer 100 is polished by sodium hydroxide or potassium hydroxide, and a conductive layer formed at the edge of the N-type silicon wafer 100 in the diffusion process is removed, so that the subsequent preparation of the solar photovoltaic cell is facilitated.
It is understood that the oxidation of the back surface of the alkali polished N-type silicon wafer 100 to form the tunnel oxide layer 300 and the N + doped polysilicon layer 400 includes: preparing in-situ doped polysilicon by a plasma enhanced chemical vapor deposition method, so that an N + doped polysilicon layer 400 is formed on the back of the alkali-polished N-type silicon wafer 100 by the polysilicon; oxygen is introduced into the apparatus for preparing the N + doped polysilicon layer 400 to form the tunnel oxide layer 300 on the back surface of the N-type silicon wafer 100 to protect the N + doped polysilicon layer 400.
According to an embodiment of the present disclosure, when the tunnel oxide layer 300 and the N + doped polysilicon layer 400 are prepared, the in-situ doped polysilicon layer is prepared by a plasma enhanced chemical vapor deposition method, wherein the chemical vapor deposition method is to ionize a gas containing film component atoms by means of microwave or radio frequency, etc., so as to form a plasma locally, and the plasma has strong chemical activity and is easy to react, so that the N + doped polysilicon layer 400 is deposited on the N-type silicon wafer 100. After the N + doped polysilicon layer 400 is obtained, oxygen needs to be introduced into the same machine to form thermal oxidation on the back surface of the N-type silicon wafer 100, and the tunneling oxide layers 300 on the front and back surfaces of the N + doped polysilicon layer 400 are formed at high temperature, so that the N + doped polysilicon layer 400 deposited on the front and back surfaces of the N-type silicon wafer 100 is protected, and the N + doped polysilicon structure is prevented from being damaged when a damage layer caused by laser etching is removed subsequently. Specifically, the passivation effect of the tunnel oxide layer 300 and the passivation effect of the n + doped polysilicon layer 400 can reduce the minority carrier recombination rate, and the n + doped polysilicon layer 400 is beneficial to the conduction of the majority carrier, so that the solar photovoltaic cell has high open-circuit voltage and fill factor.
It can be understood that laser grooving of the n + doped polysilicon layer 400 by means of laser etching includes: controlling the laser power to be 7.0 w-8.0 w, and performing laser grooving on the n + doped polycrystalline silicon layer 400 in a laser etching mode to enable the thickness of the n + doped polycrystalline silicon layer 400 after laser grooving to be more than or equal to 50nm.
It is understood that the spot diameter of the laser is 90um to 120um.
According to an embodiment of the present application, the in-situ doping concentration requirement of the plasma enhanced chemical vapor deposition method is low enough, after the N + doped polysilicon layer 400 and the tunnel oxide layer 300 are deposited on the N-type silicon wafer 100, laser is controlled, and low-energy laser is used to perform laser etching on the back surface of the N-type silicon wafer 100 to form a back contact cell structure, so as to avoid forming an N + region with too high doping concentration. Specifically, the power of laser etching in the conventional technology is about 20 w-30 w, and through experiments and microscopic analysis, the power of laser etching in the present application is set to 7.0 w-8.0 w, and low-frequency and low-power laser is adopted, so that when an n + region with too high doping concentration is avoided, the n + doped polysilicon layer 400 is prevented from being punctured due to too high energy of the laser, even the tunneling oxide layer 300 is punctured, and the structure of the n + doped polysilicon layer 400 may be changed. More specifically, when the n + doped polysilicon layer 400 is etched by using laser, at least the n + doped polysilicon layer 400 with a thickness of more than 50nm should be left, so as to minimize the burning-through of the tunneling oxide layer 300 and the n + doped polysilicon layer 400 by aluminum paste during the subsequent co-firing process, so as to retain the metal passivation effect of the tunneling oxide layer 300 and the n + doped polysilicon layer 400.
Moreover, the spot size of laser is too big, will influence doping area and formation electric field, and this application combines relevant experience and experimental analysis, sets the spot diameter of laser into 90um ~ 120um, has effectively prevented that laser from influencing doping area and formation electric field.
It can be understood that, after laser grooving, removing the damaged layer on the back side of the N-type silicon wafer 100, the N + region of the laser region, and the glass layers on the front side and the back side by a chemical etching method includes: controlling the temperature to be within a range from 40 ℃ to 50 ℃, and removing a damaged layer on the back surface of the N-type silicon wafer 100 and an N + region of a laser region through sodium hydroxide or potassium hydroxide, wherein the mass fraction of the sodium hydroxide or the potassium hydroxide is 3% -6%; and removing the phosphorosilicate glass layer and the borosilicate glass layer on the front side and the back side of the N-type silicon wafer 100 through hydrofluoric acid, wherein the glass layers comprise the phosphorosilicate glass layer and the borosilicate glass layer.
It should be noted that, in the process of manufacturing the PN junction, silicon oxide is generated on the front and back sides of the N-type silicon wafer 100, and after phosphorus is diffused, silicon oxide and phosphorus oxide generate phosphorosilicate glass, and the existence of the phosphorosilicate glass layer affects the contact between the metal electrode and the N-type silicon wafer 100 in the subsequent electrode printing process, so that the conversion efficiency of the battery is reduced, and meanwhile, the phosphorosilicate glass layer contains various metal ion impurities, which can reduce the minority carrier lifetime, so that the phosphorosilicate glass layer on the front and back sides of the N-type silicon wafer 100 needs to be removed again by a chemical corrosion method.
According to an embodiment of the application, the damage layer and the N + region of the laser region caused by laser grooving on the back surface of the N-type silicon wafer 100 are removed by using sodium hydroxide or potassium hydroxide, and the phosphorosilicate glass layer and the borosilicate glass layer on the front surface and the back surface of the N-type silicon wafer 100 are removed by using hydrofluoric acid, so that the number of impurities near the front surface and the back surface of the N-type silicon wafer 100 is reduced to facilitate the subsequent processes.
Specifically, 3-6% of sodium hydroxide and potassium hydroxide by mass are adopted, and sodium hydroxide or potassium hydroxide is adopted to slowly corrode a damaged layer and an N + region of a laser region caused by laser grooving on the back surface of an N-type silicon wafer 100 at the temperature of 40-50 ℃, so that the damaged layer and the N + region are cleaned, and meanwhile, 50nm of N + doped polycrystalline silicon layer 400 left under a laser etching groove is kept as much as possible, so that burning-through of aluminum slurry to the tunneling oxide layer 300 and the N + doped polycrystalline silicon layer 400 during subsequent co-firing is reduced as much as possible, and a metal passivation effect formed by the tunneling oxide layer 300 and the N + doped polycrystalline silicon layer 400 is kept.
More specifically, the laser cleaning device adopts a chemical corrosion method for cleaning, secondary use of laser is reduced, and secondary damage to a laser area is avoided.
It is understood that the passivation film 500 is deposited on the N + doped polysilicon layer 400 of the chemically etched N-type silicon wafer 100, including: the back of the N-type silicon wafer 100 is plated with aluminum oxide by a plasma enhanced chemical vapor deposition method or an atomic layer deposition method, so that the N + doped polysilicon layer 400 of the N-type silicon wafer 100 after chemical etching is deposited with the passivation film 500.
According to an embodiment of the present application, the back surface of the N-type silicon wafer 100 is plated with aluminum oxide by a plasma enhanced chemical vapor deposition method or an atomic layer deposition method, and a passivation film 500 is deposited. Specifically, the atomic layer deposition method is a method capable of plating aluminum oxide on the back of the N-type silicon wafer 100 layer by layer in a monoatomic film form, and since a large amount of negative charges are on the surface of the aluminum oxide, the back of the N-type silicon wafer 100 can be passivated, so that the open-circuit voltage of the solar photovoltaic cell is increased.
It can be understood that, depositing the antireflection film on the passivation film 500 on the N + region on the front side and the passivation film 500 on the back side of the N-type silicon wafer 100 after depositing the passivation film 500 includes: and plating silicon nitride on the front and back surfaces of the N-type silicon wafer 100 by a plasma enhanced chemical vapor deposition method, so that the antireflection film is deposited on the N + region on the front surface of the N-type silicon wafer 100 and the passivation film 500 on the back surface of the N-type silicon wafer after the passivation film 500 is deposited.
It should be noted that silicon nitride has corrosion-resistant and anti-reflective effects, and a layer of silicon nitride is deposited on the front and back surfaces of the N-type silicon wafer 100 by a plasma enhanced chemical vapor deposition method to obtain the front anti-reflective film 610 and the back anti-reflective film of the N-type silicon wafer 100. Specifically, the antireflection film is prepared by utilizing the thin film interference principle, so that light reflection is reduced, a passivation effect is achieved, the short-circuit current and the output power of the cell are increased, the light projection rate is increased, and the photoelectric efficiency of the solar photovoltaic cell is improved.
It can be understood that, printing and co-firing the N-type silicon wafer 100 after depositing the anti-reflection film to form the p + region 700 and the positive and negative electrodes include: printing boron-containing aluminum paste at the laser grooving position of the N-type silicon wafer 100 after the antireflection film is deposited; printing high-viscosity conductive silver paste on the N + doped polycrystalline silicon layer 400 on the back of the N-type silicon wafer 100; and co-firing the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon chip 100 to form a p + region 700 and positive and negative electrodes.
It can be understood that the co-firing of the boron-containing aluminum paste and the high viscosity conductive silver paste printed on the N-type silicon wafer 100 to form the p + region 700 and the positive and negative electrodes includes: the method comprises the steps of co-firing boron-containing aluminum paste and high-viscosity conductive silver paste printed on an N-type silicon chip 100, controlling the co-firing temperature to be in a range from 680 ℃ to 720 ℃, doping boron in the boron-containing aluminum paste into the N-type silicon chip 100 to form a p + region 700, and forming a positive electrode and a negative electrode by the aluminum paste and the silver paste respectively.
It should be noted that after the passivation film 500 and the anti-reflection film are prepared, the N-type silicon wafer 100 is printed. Specifically, according to the method, the boron-containing aluminum paste is printed on the laser groove of the N-type silicon wafer 100 after the antireflection film is deposited, the high-viscosity conductive silver paste is printed on the N + doped polycrystalline silicon layer 400 on the back of the N-type silicon wafer 100, namely, the positive electrode and the negative electrode are printed, the metal electrode is prepared, a complete loop current is formed, the current is collected and the electric conduction effect is achieved, and therefore the solar photovoltaic cell forms good ohmic contact characteristics, welding performance and adhesiveness.
The sintering is to form ohmic contact between the electrode printed in the printing step and the N-type silicon wafer 100 at a high temperature to conduct current. Specifically, the sintering temperature is controlled within the range of 680 ℃ to 720 ℃, so that good ohmic contact is formed between the high-viscosity conductive silver paste, the boron-containing aluminum paste and the N-type silicon wafer 100; if the sintering temperature is lower than 680 ℃, boron in the boron-containing aluminum paste may not be completely doped into the N-type silicon wafer 100 to form the p + region 700, so that the solar photovoltaic cell of the present application has abnormal sintering and low conversion efficiency; if the sintering temperature is higher than 720 ℃, poor sintering may be caused, so that the conversion efficiency of the solar photovoltaic cell is low.
According to an embodiment of the present application, an infrared sintering manner is adopted in the present application, and the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the surface of the N-type silicon wafer 100 are co-fired, so that boron doped in the boron-containing aluminum paste is doped into the N-type silicon wafer 100 to form the p + region 700, and the aluminum paste and the silver paste form the positive and negative electrodes of the solar photovoltaic cell of the present application, that is, the silver grid line 800 and the aluminum grid line 900 are formed. Specifically, after the boron-containing aluminum paste and the high-viscosity conductive silver paste are printed, the sintering is carried out in an infrared sintering furnace to form an electrode, the temperature in the sintering process is controlled within the range from 680 ℃ to 720 ℃, the aluminum paste is burnt through the tunneling oxide layer 300, the sintering depth of the silver paste is insufficient, and the good ohmic contact effect is achieved.
It should be noted that, in the conventional technology, a boron-containing doping source is generally formed on the surface of the N-type silicon wafer 100 by printing or coating, and then cleaned by a chemical method, but this method is prone to have organic solvent residue, and if the cleaning is performed by using a chemical reagent with a strong organic solvent removing effect, the battery structure or process effect that has been formed in the previous process may be damaged. By adopting a co-firing mode, organic matters are discharged through combustion when the aluminum paste containing the boron doping source is sintered at a high temperature, surface residues cannot be caused, and repeated cleaning of the solar photovoltaic cell is avoided.
The embodiments of the present application have been described in detail with reference to the drawings, but the present application is not limited to the embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present application.

Claims (10)

1. A preparation method of a solar photovoltaic cell is characterized by comprising the following steps:
texturing the front side and the back side of the N-type silicon wafer;
carrying out phosphorus diffusion on the front side and the back side of the textured N-type silicon wafer to obtain N + regions of the front side and the back side of the N-type silicon wafer;
performing alkali polishing on the back surface of the N-type silicon wafer after phosphorus diffusion;
oxidizing the back surface of the N-type silicon wafer after alkali polishing to form a tunneling oxide layer and an N + doped polycrystalline silicon layer;
performing laser grooving on the n + doped polycrystalline silicon layer in a laser etching mode;
removing a damaged layer on the back of the N-type silicon wafer, an N + region of a laser region and glass layers on the front side and the back side of the laser grooved by a chemical corrosion method;
depositing a passivation film on the N + doped polycrystalline silicon layer of the N-type silicon wafer after chemical corrosion;
depositing antireflection films on the N + region on the front side of the N-type silicon wafer and the passivation film on the back side of the N-type silicon wafer after depositing the passivation film;
and printing and co-firing the N-type silicon chip on which the antireflection film is deposited to form a p + region and positive and negative electrodes so as to form the solar photovoltaic cell.
2. The method for preparing the solar photovoltaic cell according to claim 1, wherein the alkali polishing the back surface of the N-type silicon wafer after the phosphorus diffusion comprises:
removing the phosphorosilicate glass layer on the back of the N-type silicon wafer after phosphorus diffusion through chain type equipment;
and polishing the back of the N-type silicon wafer with the phosphorosilicate glass layer removed by adopting sodium hydroxide or potassium hydroxide.
3. The method according to claim 1, wherein the step of oxidizing the back surface of the N-type silicon wafer after the alkali polishing to form a tunneling oxide layer and an N + doped polysilicon layer comprises:
preparing in-situ doped polycrystalline silicon by a plasma enhanced chemical vapor deposition method, so that the N + doped polycrystalline silicon layer is formed on the back surface of the N-type silicon wafer after the polycrystalline silicon is subjected to alkali polishing;
and introducing oxygen into the equipment for preparing the N + doped polycrystalline silicon layer to form the tunneling oxide layer on the back of the N-type silicon wafer so as to protect the N + doped polycrystalline silicon layer.
4. The method according to claim 1, wherein the laser grooving of the n + doped polysilicon layer by laser etching comprises:
controlling the power of the laser to be 7.0 w-8.0 w, and performing laser grooving on the n + doped polycrystalline silicon layer in a laser etching mode to enable the thickness of the n + doped polycrystalline silicon layer after laser grooving to be larger than or equal to 50nm.
5. The method for preparing the solar photovoltaic cell of claim 4, wherein the diameter of the laser light spot is 90-120 um.
6. The method for preparing the solar photovoltaic cell according to claim 1, wherein the removing the damaged layer on the back surface of the N-type silicon wafer, the N + region of the laser region and the glass layers on the front and back surfaces after laser grooving by a chemical etching method comprises:
controlling the temperature to be within a range from 40 ℃ to 50 ℃, and removing a damaged layer on the back surface of the N-type silicon wafer and an N + region of a laser region through sodium hydroxide or potassium hydroxide, wherein the mass fraction of the sodium hydroxide or the potassium hydroxide is 3% -6%;
and removing the phosphorosilicate glass layer and the borosilicate glass layer on the front side and the back side of the N-type silicon wafer through hydrofluoric acid, wherein the glass layer comprises the phosphorosilicate glass layer and the borosilicate glass layer.
7. The method according to claim 1, wherein depositing a passivation film on the N + doped polysilicon layer of the chemically etched N-type silicon wafer comprises:
and plating aluminum oxide on the back surface of the N-type silicon wafer by a plasma enhanced chemical vapor deposition method or an atomic layer deposition method, so that the N + doped polycrystalline silicon layer of the N-type silicon wafer after chemical corrosion is deposited with a passivation film.
8. The method for preparing the solar photovoltaic cell according to claim 1, wherein the depositing of the antireflection film on the passivation film on the N + region of the front surface and the passivation film on the back surface of the N-type silicon wafer after the deposition of the passivation film comprises:
and plating silicon nitride on the front and back surfaces of the N-type silicon wafer by a plasma enhanced chemical vapor deposition method, so that antireflection films are deposited on the N + region on the front surface and the passivation film on the back surface of the N-type silicon wafer after the passivation film is deposited.
9. The method for preparing a solar photovoltaic cell according to claim 1, wherein the printing and co-firing the N-type silicon wafer after the deposition of the anti-reflection film to form a p + region and positive and negative electrodes comprises:
printing boron-containing aluminum paste at the laser grooving position of the N-type silicon wafer after the antireflection film is deposited;
printing high-viscosity conductive silver paste on the N + doped polycrystalline silicon layer on the back of the N-type silicon wafer;
and co-firing the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon chip to form a p + region and positive and negative electrodes.
10. The method for preparing a solar photovoltaic cell according to claim 9, wherein the co-firing of the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon wafer to form a p + region and positive and negative electrodes comprises:
and co-firing the boron-containing aluminum paste and the high-viscosity conductive silver paste printed on the N-type silicon chip, and controlling the co-firing temperature to be in a range from 680 ℃ to 720 ℃, so that boron in the boron-containing aluminum paste is doped into the N-type silicon chip to form the p + region, and the aluminum paste and the silver paste form a positive electrode and a negative electrode respectively.
CN202211213637.XA 2022-09-30 2022-09-30 Preparation method of solar photovoltaic cell Pending CN115440853A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117040401A (en) * 2023-08-22 2023-11-10 苏州赛福天新能源技术有限公司 PERC efficient battery piece and battery piece yield improvement process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117040401A (en) * 2023-08-22 2023-11-10 苏州赛福天新能源技术有限公司 PERC efficient battery piece and battery piece yield improvement process
CN117040401B (en) * 2023-08-22 2024-01-23 苏州赛福天新能源技术有限公司 PERC efficient battery piece and battery piece yield improvement process

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