CN115436771B - Junction temperature measuring circuit and system - Google Patents
Junction temperature measuring circuit and system Download PDFInfo
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- CN115436771B CN115436771B CN202211145700.0A CN202211145700A CN115436771B CN 115436771 B CN115436771 B CN 115436771B CN 202211145700 A CN202211145700 A CN 202211145700A CN 115436771 B CN115436771 B CN 115436771B
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G01R31/2607—Circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
The invention provides a junction temperature measuring circuit and a system, which are used for measuring the junction temperature of a device to be measured, wherein the junction temperature measuring circuit at least comprises: the clamping module is used for clamping and controlling the working voltage of the junction temperature measuring circuit and performing overcurrent protection on the junction temperature measuring circuit; the current limiting module is used for limiting the current of the temperature measuring circuit; the first power supply is used for supplying power to the junction temperature measuring circuit in an isolated manner; the first protection module is used for protecting the first power supply; the second protection module is used for performing voltage stabilization protection on the second end of the clamping module; the second power supply is used for supplying power to the clamping module; the third protection module is used for protecting the voltage of the third end of the clamping module. The junction temperature of the device to be measured is measured at the first time by measuring the voltage of the second end of the clamping module and the first measuring point of the device to be measured at the end of the measuring pulse, and the measuring result is accurate and reliable. Simple structure, simple operation and wide applicability.
Description
Technical Field
The present invention relates to the field of semiconductor design and application technology, and in particular, to a junction temperature measurement circuit and system.
Background
In power device testing, junction temperature measurements are used to characterize the thermal resistance properties inside the power device. Conventional steady-state junction temperature measurements represent only thermal resistance behavior under steady-state conditions, where the device junction temperature is related to chip size and package type, but not to power device internal structure. The transient junction temperature is related to the internal structure of the device, and the transient junction temperature measurement plays a role in whether the power device has high temperature resistance or not, but the transient junction temperature measurement is difficult, and the accuracy of the measurement result is poor, because after the high-energy pulse passes through the power device, the heat in the device rapidly dissipates to the periphery, so that the measured junction temperature is not the transient junction temperature expected to be obtained at the first time, but is the average junction temperature in a short time, and therefore, the accuracy of the junction temperature measurement is limited by the response speed of the conventional measurement system.
In theory, when pulse energy is emitted to the power device, it is the most ideal case to measure the junction temperature for the power device, but this is often difficult to achieve, because the pulse energy is usually accompanied by high voltage and high current, and it is necessary to wait for the junction temperature measurement after the pulse energy is ended, so the junction temperature measurement is performed at the first time when the pulse energy is ended, and the shorter the time interval, the more accurate the measurement result.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a junction temperature measurement circuit and system, which are used for solving the problem that the response speed of the junction temperature measurement system is too slow to restrict the accuracy of the junction temperature measurement result in the prior art.
To achieve the above and other related objects, the present invention provides a junction temperature measurement circuit, including at least: clamping module, first protection module, second protection module, third protection module, current limiting module, first power and second power, wherein:
the first end of the clamping module is connected with a second measuring point of the device to be measured, and is used for clamping and controlling the working voltage of the junction temperature measuring circuit and performing overcurrent protection on the junction temperature measuring circuit;
the current limiting module is connected with the second end of the clamping module and is used for limiting the junction temperature measuring circuit;
the first power supply is connected with the current limiting module and is used for supplying power to the junction temperature measuring circuit in an isolated mode, and when the measuring pulse of the device to be measured is finished, the voltage of the device to be measured is represented by the current provided by the first power supply to the device to be measured, so that the junction temperature of the device to be measured is obtained, wherein the connection point of the first power supply and the current limiting module is grounded;
the first protection module is connected between a first measuring point of the device to be measured and the current limiting module and is used for protecting the first power supply;
the second protection module is connected between the second end and the third end of the clamping module and is used for performing voltage stabilization protection on the second end of the clamping module;
the second power supply is connected with a third end of the clamping module and is used for supplying power to the clamping module;
the third protection module is connected between the third end of the clamping module and the reference ground and is used for protecting the voltage of the third end of the clamping module.
Optionally, the clamping module is a silicon carbide power tube, the first end of the clamping module is a drain electrode of the silicon carbide power tube, the second end of the clamping module is a source electrode of the silicon carbide power tube, and the third end of the clamping module is a grid electrode of the silicon carbide power tube, wherein the withstand voltage threshold value of the silicon carbide power tube is more than or equal to 600V.
Optionally, the current limiting module is a first resistor, and the resistance value of the first resistor is 1K ohm.
Optionally, the first power supply includes a 5V dc power supply and a first capacitor, where the first capacitor is connected between the 5V dc power supply and a reference ground, and filters an output voltage of the 5V dc power supply.
Optionally, the first protection module comprises a first diode and a second resistor, wherein the cathode of the first diode is connected with a first measuring point; the second resistor is connected with the positive electrode of the first diode, wherein the resistance value of the second resistor is 1 ohm.
Optionally, the second protection module includes a second diode, where a negative electrode of the second diode is connected to the second end of the clamping module, and a positive electrode of the second diode is grounded.
Optionally, the third protection module includes a third diode and a second capacitor, where a negative electrode of the third diode is connected to a third end of the clamping module, and a positive electrode of the third diode is grounded; the second capacitor is connected in parallel with the third diode.
Optionally, the second power source comprises a 12V dc power source.
Optionally, the junction temperature measurement circuit further includes a third resistor and a fourth resistor, where the third resistor is connected between a second measurement point and the first end of the clamping module, and is used for performing overload protection on the junction temperature measurement circuit, where a resistance value of the third resistor is 10 ohms; the fourth resistor is connected between the second power supply and the third end of the clamping module and used for protecting the second power supply, wherein the resistance value of the fourth resistor is 100 ohms.
To achieve the above and other related objects, the present invention provides a junction temperature measurement system, including at least: device to be measured, measuring equipment and junction temperature measuring circuit, wherein:
the junction temperature measuring circuit is connected between a first measuring point and a second measuring point of the device to be measured and is used for measuring the junction temperature of the device to be measured;
the measuring equipment is connected between a first measuring point of the device to be measured and the junction temperature measuring circuit, and the junction temperature of the device to be measured is obtained by measuring the voltage in the junction temperature measuring circuit.
Optionally, the device to be tested is a power tube or a diode; the measuring equipment is an oscilloscope or a spectrometer.
As described above, the junction temperature measuring circuit and system of the invention have the following beneficial effects:
1) The junction temperature measuring circuit and the junction temperature measuring system can measure the junction temperature of the device to be measured at the first time by measuring the voltage of the second end of the clamping module and the first measuring point of the device to be measured at the end of the measuring pulse of the device to be measured, and the measuring result is accurate and reliable.
2) The junction temperature measuring circuit and system have the advantages of simple structure, simple operation and wide applicability.
Drawings
FIG. 1 is a schematic diagram of a junction temperature measurement circuit according to the present invention.
FIG. 2 is a schematic diagram of a junction temperature measurement system according to the present invention.
Description of the reference numerals
1. Junction temperature measuring circuit
11. Clamping module
12. First power supply
13. First protection module
14. Second protection module
15. Third protection module
16. Second power supply
17. Current limiting module
2. Device under test
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 and 2. It should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment provides a junction temperature measurement circuit 1 for measuring a junction temperature of a device under test, the junction temperature measurement circuit 1 at least comprising: the clamping module 11, the first protection module 13, the second protection module 14, the third protection module 15, the current limiting module 17, the first power supply 12 and the second power supply 16, wherein:
as shown in fig. 1, a first end of the clamping module 11 is connected to a second measurement point J2 of the device under test, and is used for clamping and controlling the working voltage of the junction temperature measurement circuit 1 and performing overcurrent protection on the junction temperature measurement circuit 1.
Specifically, as shown in fig. 1, as an example, the clamping module 11 is a silicon carbide power tube Q1, a first end of the clamping module 11 is a drain electrode of the silicon carbide power tube Q1, a second end is a source electrode of the silicon carbide power tube Q1, and a third end is a gate electrode of the silicon carbide power tube Q1, where a withstand voltage threshold value of the silicon carbide power tube Q1 is greater than or equal to 600V. Silicon carbide is a compound semiconductor material composed of elemental carbon and elemental silicon, and is very stable thermally, chemically, and mechanically. The different combinations of carbon and silicon atoms give silicon carbide a variety of lattice structures, such as 4H, 6H, 3C, etc. Further, the lattice represents a space lattice in which atoms are regularly arranged in the crystal, which is also called a crystal lattice, atoms in the crystal are arranged according to a certain geometric rule, the atoms are regarded as a sphere, and the center lines of the atoms in the crystal are connected by virtual lines to form a space lattice for describing a space collection pattern of the atoms in the crystal in a regular arrangement mode.
The carbon atoms (and optionally silicon atoms) are selected to form the closest packed layer, called the a layer. There are two positions at this time to place the next layer of silicon atoms, the B position of the upper triangle or the C position of the lower triangle. If the silicon atoms are filled in the B-site, the next layer is called the B-layer; if filled in the C position, the next layer is called the C layer. Thus, silicon carbide with a lattice structure of 4H, the corresponding ABAC type; silicon carbide with a wafer structure of 6H and corresponding ABCACB type; the wafer structure is 3C silicon carbide and corresponds to ABC type.
As an example, silicon carbide with a lattice structure of 4H has a higher carrier mobility, can provide a higher current density, and 4H is often used for power devices. Silicon carbide devices have three advantages over silicon devices: (1) the energy loss in the electric energy conversion process is reduced; (2) miniaturization is easier to achieve; (3) is more resistant to high temperatures and higher than. As is clear from the application, the silicon carbide device has an insulation breakdown voltage 10 times or more higher than that of the silicon device, and a silicon carbide power tube can generally withstand a high voltage of 600V to several thousand V, and compared with the silicon device, the silicon carbide device can increase the impurity concentration and thin the drift layer of the film thickness, while the resistance component of the high voltage resistor device is mostly the resistance of the drift layer, and the resistance value is in direct proportion to the thickness of the drift layer, and since the drift layer of silicon carbide is thin, a high voltage resistant device with very low on-resistance per unit area can be manufactured. Theoretically, if the withstand voltage is the same, the drift layer per unit area of silicon carbide can be as low as 1/300 or even lower than that of a silicon element. And because the band gap of silicon carbide is 3 times that of silicon, the silicon carbide can work at higher temperature, and along with the development of packaging technology, the working temperature of the silicon carbide can reach more than 200 ℃.
In this embodiment, the clamping module 11 uses the silicon carbide power tube Q1, even if a voltage of 600V or more is applied between the first measurement point J1 and the second measurement point J2, for example, a voltage of 1000V or 3300V or 6600V or even a voltage exceeding 6600V is applied, the driving voltage of the gate of the silicon carbide power tube is still clamped at ten or more V, for example, 12V, the on threshold of the silicon carbide power tube Q1 is about 3V, the source voltage of the silicon carbide power tube Q1 is 9V, that is, the voltage of the second end of the clamping module 11 is 9V, and the junction temperature of the device to be measured is obtained by measuring the voltage of the second end of the clamping module 11 and the first measurement point J1 at the end of the measurement pulse at the first time.
It should be noted that, the clamping module 11 adopts the silicon carbide power tube Q1, and utilizes the characteristic of strong SOA performance of the silicon carbide power tube, the SOA is an abbreviation of Safe operating area, namely, a safe working area, which is a two-dimensional area formed by coordinate points of voltage and current, and the voltage and current of the device during normal operation cannot exceed the safe working area. The SOA performance of the silicon carbide power tube Q1 is strong, and the silicon carbide power tube Q1 can still be ensured to be safe under measurement pulses, especially under high-energy measurement pulses (the voltage between the first measurement point J1 and the second measurement point J2 exceeds 600V), so that the junction temperature measurement circuit 1 is ensured to be safe, because the current for junction temperature measurement is usually only a few milliamperes, and the maximum current can not exceed a few tens of milliamperes, and the silicon carbide power tube Q1 can conduct 500 milliamperes, the use scene of junction temperature measurement is within the range of a safe working area, and is the premise of junction temperature measurement.
It should be further noted that, the clamping module 11 includes, but is not limited to, a silicon carbide power tube, as long as the clamping module can clamp and control the working voltage of the temperature measurement circuit 1 and protect the temperature measurement circuit 1 from overcurrent, and any setting of the clamping module 11 is applicable and not limited to the embodiment.
As shown in fig. 1, a current limiting module 17 is connected to the second end of the clamping module 11, and is used for limiting the junction temperature measurement circuit.
Specifically, as shown in fig. 1, the current limiting module 17 is a first resistor R1, and the resistance value of the first resistor R1 is 1K ohms. It should be noted that, the second end voltage of the clamping module 11, that is, the source voltage of the silicon carbide power tube Q1 is 9V, if the resistance of the first resistor R1 is 1K ohms, the current of the clamping module 11 is 9 milliamperes, when the measurement pulse ends, the junction temperature measurement circuit 1 reaches the second measurement point J2 from the first measurement point J1 through the body diode of the device to be measured under the action of the 5V dc power supply in the first power supply 12, then returns to the reference ground GND through the silicon carbide power tube Q1 and the first resistor R1, at this time, the forward conduction voltage drop of the body diode of the device to be measured is about 0.7V, the loop current is 4.3 milliamperes, and because the on resistance of the silicon carbide power tube Q1 is very small, the voltage drop across the measurement device J3 is the forward conduction voltage drop of the body diode of the device to be measured. When the measuring pulse is performed and ended, the junction temperature measuring circuit 1 always works, the current is not interrupted, and when the measuring pulse is ended, the junction temperature of the device to be measured is obtained at the first time by representing the voltage drop at the two ends of the measuring device J3, and in the process, the reliability and the accuracy of the junction temperature are ensured because of no switching time. Further, the on-current of the body diode is determined by the 5V dc power supply and the current limiting module 17, so that the resistance of the first resistor R1 in the current limiting module 17 is adjusted, so that the on-current can be changed, and the stability time of the on-voltage drop signal of the body diode can be affected, because the junction capacitance exists in the diode, the charge-discharge balance time of the junction capacitance is related to the on-current, when the resistance of the first resistor R1 is smaller, the charge-discharge balance time of the junction capacitance is shorter, but it is necessary to consider whether the silicon carbide power tube Q1 in the clamping module 11 can bear the on-current, in this embodiment, the maximum of the silicon carbide power tube Q1 can reach 500 milliamperes, so that the resistance of the first resistor R1 can be properly adjusted, so as to shorten the charge-discharge balance time of the junction capacitance. It should be further noted that, the current limiting module 17 includes, but is not limited to, a first resistor, and the resistance value of the first resistor includes, but is not limited to, 1K ohms, and any current limiting module 17 and the first resistor R1 are applicable as long as the junction temperature measuring circuit 1 can perform current limiting, which is not limited to the embodiment.
As shown in fig. 1, the first power supply 12 is connected to the second end of the clamping module 11, and is used for supplying power to the junction temperature measuring circuit 1 in an isolated manner, and when the measuring pulse of the device to be measured is finished, the voltage of the device to be measured is represented by measuring the current provided by the first power supply 12 to the device to be measured, so as to obtain the junction temperature of the device to be measured, wherein the connection point of the first power supply 12 and the current limiting module 17 is grounded.
Specifically, as shown in fig. 1, the first power supply 12 includes a 5V dc power supply and a first capacitor C1, wherein the first capacitor C1 is connected between the 5V dc power supply and the ground GND, and filters an output voltage of the 5V dc power supply. It should be noted that the 5V dc power supply belongs to an isolated power supply, and is used for supplying power to the junction temperature measurement circuit 1, meanwhile, a current loop generated by the 5V dc power supply is irrelevant to a measurement pulse, and can safely pass the measurement pulse, especially the impact of a high-energy measurement pulse, when the measurement pulse is over, the current loop provided by the 5V dc power supply can be captured by the measurement device J3 at a first time, and the junction temperature of the device to be measured is obtained by the measurement device J3, wherein the measurement device J3 is connected between the second end of the clamp module 11 and the first measurement point J1, and the junction temperature measurement circuit 1 is characterized.
It should be noted that, the voltage drop at the connection points at the two ends of the measuring device J3 is the voltage drop of forward conduction of the body diode of the device to be measured, the measuring device J3 is the output end of the voltage drop of the body diode, the first end of the measuring device J3 is connected to the first measuring point J1, the first measuring point J1 is the anode of the body diode, the second end is connected to the second end of the clamping module 11, when the voltage between the first measuring point J1 and the second measuring point J2 exceeds 600V, for example, reaches thousands of V, even higher voltage, the voltage at the two ends of the measuring device J3 does not exceed 10V, if the measuring device J3 directly measures from the first measuring point J1 and the second measuring point J2, the voltage drop of the body diode is more than 600V, even higher voltage is born when the measuring pulse is performed, the voltage drop of the body diode is less than 0.7V, the voltage drop of the measuring probe of the measuring device J3 suddenly changes from the voltage drop exceeding 600V to 0.7V, and the measuring probe has a reaction time, and the measuring probe must be a high-voltage probe. Whereas the measurement device J3 is intended to measure a body diode drop of 0.7V and below, it is not possible to use a high voltage probe, because the high voltage probe has a very large error in measuring a small signal and the noise exceeds the signal itself, so the measurement device J3 has to use a low voltage probe, whereas the voltage at the first measurement point J1 and the second end of the clamping module 11 does not exceed 10V, and thus the low voltage probe is fully adequate.
As shown in fig. 1, the first protection module 13 is connected between a first measurement point J1 of the device under test and the second end of the clamping module 11, and protects the first power supply 12.
Specifically, as an example, as shown in fig. 1, the first protection module 13 includes a first diode D1 and a second resistor R2, wherein a negative electrode of the first diode D1 is connected to a first measurement point J1; the second resistor R2 is connected with the positive electrode of the first diode D1, wherein the resistance value of the second resistor R2 is 1 ohm. It should be noted that, the first diode D1 is a reverse diode of the first power supply 12, the first capacitor C1 plays a role of filtering output ripple and noise of the 5V dc power supply, and the first capacitor C1 provides additional electric energy for reducing the voltage abrupt change amplitude when the current dynamically changes, the first capacitor C1 can bear a certain reverse voltage (for the output end of the 5V dc power supply), but the first diode D1 is required to further supplement the first capacitor C1, so as to reduce the voltage abrupt change amplitude when the current dynamically changes, and the withstand current value of the first diode D1 should be greater than or equal to the maximum output current of the 5V dc power supply. The 1 ohm resistor is often used in circuits to measure, for example, when the current of a circuit needs to be measured, the voltage across the 1 ohm resistor is the current of the circuit, and the 1 ohm resistor also has the capability of suppressing high frequency noise and spike interference on the signal line and the power line and absorbing electrostatic pulses. It should be further noted that the arrangement of the first protection module 13 includes, but is not limited to, the first diode D1 and the second resistor R2, and any arrangement of the first protection module 13 is applicable as long as the first power source 12 can be protected. As shown in fig. 1, the second protection module 14 is connected between the second end and the third end of the clamping module 11, and is configured to perform voltage stabilizing protection on the second end of the clamping module 11; the third protection module 15 is connected between the third terminal of the clamping module 11 and the ground GND, and is configured to protect the voltage of the third terminal of the clamping module 11; the second power supply 16 is connected to the third terminal of the clamping module 11 for supplying power to the clamping module 11.
Specifically, as an example, as shown in fig. 1, the second protection module 14 includes a second diode D2, where a cathode of the second diode D2 is connected to the second end of the clamping module 11, and an anode is grounded to the ground GND; the second power supply 16 comprises a 12V dc power supply, wherein the 12V dc power supply and the 5V dc power supply share a negative electrode; the third protection module 15 includes a third diode D3 and a second capacitor C2, where a negative electrode of the third diode D3 is connected to a third end of the clamping module 11, and a positive electrode is grounded to the ground GND; the second capacitor C2 is connected in parallel with the third diode D3. The second diode D2 has the following functions: when the voltage of the second measurement point J2 and the voltage of the first measurement point J1 are prevented from suddenly changing, the parasitic capacitance couples the suddenly changing voltage to the second terminal of the clamp module 11 (i.e., the source of the silicon carbide power tube Q1), so that the voltage of the second terminal of the clamp module 11 suddenly changes. The second capacitor C2 and the third diode D3 function as: when the voltage at the third terminal of the clamping module 11 is stabilized to prevent abrupt change of the voltages at the second measurement point J2 and the first measurement point J1, the abrupt change of the voltage at the third terminal of the clamping module 11 (i.e., the gate of the silicon carbide power tube Q1) is caused by coupling the abrupt change voltage to the parasitic capacitance. The 12V dc power supply belongs to an isolation power supply, and is used for supplying power to the clamp module 11, that is, supplying power to the silicon carbide power tube Q1, during the measurement pulse operation period, since the gate voltages of the current limiting module 17 and the silicon carbide power tube Q1 are constant, the gate voltage of the silicon carbide power tube Q1 is 12V, the conduction threshold of the silicon carbide power tube Q1 is usually about 3V, the source voltage of the silicon carbide power tube Q1 is 9V, and under the action of the first resistor R1 in the current limiting module 17, the current passing through the first resistor R1 is 9 milliamperes, and because the first resistor R1 is connected in series with the silicon carbide power tube Q1, the current passing through the silicon carbide power tube Q1 is also 9 milliamperes; when the measuring pulse is ended, the first power supply 12 always supplies power to the junction temperature measuring circuit 1, and the current passing through the silicon carbide power tube Q1 is 4.3 milliamperes at the moment, so that the measuring device J3 obtains the junction temperature of the device to be measured at the first time by comparing the voltage change at the end of the measuring pulse, and the measuring result is very accurate because the time interval is extremely short.
Specifically, as shown in fig. 1, as an example, the junction temperature measurement circuit 1 further includes a third resistor R3 and a fourth resistor R4, where the third resistor R3 is connected between the second measurement point J2 and the first end of the clamping module 11, and is used for performing overload protection on the junction temperature measurement circuit 1, where a resistance value of the third resistor R3 is 10 ohms; the fourth resistor R4 is connected between the second power supply 16 and the third terminal of the clamping module 11, and is used for protecting the second power supply 16, wherein a resistance value of the fourth resistor R4 is 100 ohms. It should be noted that, the third resistor R3 plays a role in protecting the silicon carbide power tube Q1, and functions like a fuse, and plays a complementary role in protecting the silicon carbide power tube Q1, and since the silicon carbide power tube Q1 already has the second protection module 14 and the third protection module 15 to protect it, the third resistor R3 may not be set in an application scenario with low safety level requirements. The fourth resistor R4 is used for protecting the 12V isolated power supply in the second power supply 16, and functions similar to a fuse, and the fourth resistor R4 may not be provided in an application scenario with low safety level requirements.
It should be further noted that the arrangement of the second protection module 14 includes, but is not limited to, the second diode D2; the third protection module 15 includes, but is not limited to, a third diode D3 and a second capacitor C2, and any arrangement of the second protection module 14 and the third protection module 15 is applicable as long as the clamping module 11 can be protected, and is not limited to the present embodiment.
As shown in fig. 2, the present embodiment further provides a junction temperature measurement system, which includes: the device under test 2, the measurement device J3, and the junction temperature measurement circuit 1 provided in this embodiment, wherein:
as shown in fig. 2, the junction temperature measuring circuit 1 is connected between a first measuring point J1 and a second measuring point J2 of the device under test 2, and performs junction temperature measurement on the device under test 2.
Specifically, as shown in fig. 1 and fig. 2, as an example, the device 2 to be tested is a power tube or a diode, when the device 2 to be tested is the power tube Q2, the source electrode of the power tube Q2 is connected to the first measurement point J1, and the drain electrode is connected to the second measurement point J2, that is, the conduction direction of the parasitic diode of the power tube Q2 is the same as the conduction direction of the parasitic diode of the silicon carbide power tube Q1 in the clamping module 11, and junction temperature measurement is performed by accessing a measurement pulse, so that specific measurement operations are not described in detail herein; when the device 2 to be measured is a diode, the anode of the diode is connected to the first measurement point J1, and the cathode is connected to the second measurement point J2, that is, the conduction direction of the diode is the same as the conduction direction of the parasitic diode of the silicon carbide power tube Q1 in the clamping module 11, and junction temperature measurement is performed by accessing the measurement pulse, so that specific measurement operations are not described in detail herein.
As shown in fig. 2, the measurement device J3 is connected between the first measurement point J1 of the device under test 2 and the junction temperature measurement circuit 1, and obtains the junction temperature of the device under test 2 by measuring the voltage in the junction temperature measurement circuit 1. By measuring the current change of the junction temperature measuring circuit 1 at the time of the end of the neutralization of the measurement pulse, the junction temperature of the device 2 to be measured is obtained at the first time of the end of the measurement pulse.
Specifically, as shown in fig. 1 and fig. 2, as an example, the measurement device J3 is an oscilloscope, it should be noted that, one end of the measurement device J3 connected to the first measurement point J1 is the positive electrode of the body diode of the device 2 to be measured, and the other end connected to the source electrode of the silicon carbide power tube Q1 in the clamping module 11 is the negative electrode of the body diode of the device 2 to be measured, and even if the signal between the first measurement point J1 and the second measurement point J2 exceeds 600V, even thousands of V, even higher voltage, the voltage at two ends of the measurement device J3 does not exceed 10V, so that the junction temperature of the device 2 to be measured can be measured at the first time, and the safety protection can be provided for the measurement probe of the measurement device J3, thereby having a wide application value. It should be further noted that, the measuring device J3 includes, but is not limited to, an oscilloscope or a spectrometer, as long as the measuring device can measure the current change at the end of the neutralization of the measuring pulse, and the junction temperature of the device 2 to be measured is obtained at the first time when the measuring pulse ends, and any measuring device J3 is applicable, which is not limited to the present embodiment.
In summary, the junction temperature measuring circuit and system of the present invention are used for measuring the junction temperature of a device to be measured, and the junction temperature measuring circuit at least includes: clamping module, first protection module, second protection module, third protection module, current limiting module, first power and second power, wherein: the first end of the clamping module is connected with a second measuring point of the device to be measured, and is used for clamping and controlling the working voltage of the junction temperature measuring circuit and performing overcurrent protection on the junction temperature measuring circuit; the current limiting module is connected with the second end of the clamping module and is used for limiting the junction temperature measuring circuit; the first power supply is connected with the current limiting module and is used for providing isolated power for the junction temperature measuring circuit, and when the measuring pulse of the device to be measured is finished, the junction temperature of the device to be measured is obtained by measuring the current provided by the first power supply to the device to be measured, wherein the connection point of the first power supply and the current limiting module is grounded; the first protection module is connected between a first measuring point of the device to be measured and the current limiting module and is used for protecting the first power supply; the second protection module is connected with the second end of the clamping module and is used for performing voltage stabilization protection on the second end of the clamping module; the second power supply is connected with a third end of the clamping module and is used for supplying power to the clamping module; the third protection module is connected between the third end of the clamping module and the reference ground and is used for protecting the voltage of the third end of the clamping module. The junction temperature measuring circuit and the junction temperature measuring system can measure the junction temperature of the device to be measured at the first time by measuring the voltage of the second end of the clamping module and the first measuring point of the device to be measured at the end of the measuring pulse of the device to be measured, and the measuring result is accurate and reliable. The junction temperature measuring circuit and system have the advantages of simple structure, simple operation and wide applicability. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. A junction temperature measurement circuit for measuring a junction temperature of a device under test, the junction temperature measurement circuit comprising at least: clamping module, first protection module, second protection module, third protection module, current limiting module, first power and second power, wherein:
the first end of the clamping module is connected with a second measuring point of the device to be measured and is used for clamping and controlling the working voltage of the junction temperature measuring circuit and performing overcurrent protection on the junction temperature measuring circuit, wherein the clamping module is a silicon carbide power tube, the first end of the clamping module is a drain electrode of the silicon carbide power tube, the second end of the clamping module is a source electrode of the silicon carbide power tube, and the third end of the clamping module is a grid electrode of the silicon carbide power tube, and the withstand voltage threshold value of the silicon carbide power tube is more than or equal to 600V;
the current limiting module is connected with the second end of the clamping module and is used for limiting the junction temperature measuring circuit;
the first power supply is connected with the current limiting module and is used for supplying power to the junction temperature measuring circuit in an isolated mode, and when the measuring pulse of the device to be measured is finished, the voltage drop at two ends of the device to be measured is represented by the current provided by the first power supply to the device to be measured through measurement, so that the junction temperature of the device to be measured is obtained, wherein the connection point of the first power supply and the current limiting module is grounded;
the first protection module is connected between a first measuring point of the device to be measured and the current limiting module and is used for protecting the first power supply;
the second protection module is connected with the second end of the clamping module and is used for performing voltage stabilization protection on the second end of the clamping module;
the second power supply is connected with a third end of the clamping module and is used for supplying power to the clamping module;
the third protection module is connected between the third end of the clamping module and the reference ground and is used for protecting the voltage of the third end of the clamping module.
2. The junction temperature measurement circuit according to claim 1, wherein: the current limiting module is a first resistor, and the resistance value of the first resistor is 1K ohm.
3. The junction temperature measurement circuit according to claim 1, wherein: the first power supply comprises a 5V direct current power supply and a first capacitor, wherein the first capacitor is connected between the 5V direct current power supply and the reference ground, and the output voltage of the 5V direct current power supply is filtered.
4. The junction temperature measurement circuit according to claim 1, wherein: the first protection module comprises a first diode and a second resistor, wherein the cathode of the first diode is connected with a first measuring point; the second resistor is connected with the positive electrode of the first diode, wherein the resistance value of the second resistor is 1 ohm.
5. The junction temperature measurement circuit according to claim 1, wherein: the second protection module comprises a second diode, wherein the negative electrode of the second diode is connected with the second end of the clamping module, and the positive electrode of the second diode is grounded.
6. The junction temperature measurement circuit according to claim 1, wherein: the third protection module comprises a third diode and a second capacitor, wherein the negative electrode of the third diode is connected with the third end of the clamping module, and the positive electrode of the third diode is grounded;
the second capacitor is connected in parallel with the third diode.
7. The junction temperature measurement circuit according to claim 1, wherein: the second power supply includes a 12V dc power supply.
8. The junction temperature measurement circuit according to claim 1, wherein: the junction temperature measuring circuit further comprises a third resistor and a fourth resistor, wherein the third resistor is connected between a second measuring point and the first end of the clamping module and is used for carrying out overload protection on the junction temperature measuring circuit, and the resistance value of the third resistor is 10 ohms; the fourth resistor is connected between the second power supply and the third end of the clamping module and used for protecting the second power supply, wherein the resistance value of the fourth resistor is 100 ohms.
9. A junction temperature measurement system, characterized by: the junction temperature measurement system includes at least: a device under test, a measurement apparatus and a junction temperature measurement circuit as claimed in any one of claims 1 to 8, wherein:
the junction temperature measuring circuit is connected between a first measuring point and a second measuring point of the device to be measured and is used for measuring the junction temperature of the device to be measured;
the measuring equipment is connected between a first measuring point of the device to be measured and the junction temperature measuring circuit, and the junction temperature of the device to be measured is obtained by measuring the voltage in the junction temperature measuring circuit.
10. The junction temperature measurement system according to claim 9, wherein: the device to be tested is a power tube or a diode;
the measuring device is an oscilloscope.
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| CN110174603A (en) * | 2019-05-13 | 2019-08-27 | 上海交通大学 | The on-line measurement circuit of power semiconductor conduction voltage drop |
| CN110988641A (en) * | 2019-12-06 | 2020-04-10 | 武汉大学 | IGBT module junction temperature online estimation circuit system and method |
| CN111880069A (en) * | 2020-08-20 | 2020-11-03 | 湖南大学 | Semiconductor device junction temperature on-line detection system based on turn-on current slope |
| CN114167252A (en) * | 2021-12-01 | 2022-03-11 | 中南大学 | Conduction voltage drop measuring circuit of semiconductor device |
| CN115060953A (en) * | 2022-05-24 | 2022-09-16 | 电子科技大学 | Voltage clamping circuit for testing dynamic on-resistance of power device |
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