CN115428117A - 通过等离子体频谱在动态等离子体条件下的过程控制和监控方法 - Google Patents

通过等离子体频谱在动态等离子体条件下的过程控制和监控方法 Download PDF

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Publication number
CN115428117A
CN115428117A CN202080098883.8A CN202080098883A CN115428117A CN 115428117 A CN115428117 A CN 115428117A CN 202080098883 A CN202080098883 A CN 202080098883A CN 115428117 A CN115428117 A CN 115428117A
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CN
China
Prior art keywords
function
value
functions
plasma intensity
plasma
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Pending
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CN202080098883.8A
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English (en)
Chinese (zh)
Inventor
陈威廷
张巧颖
杨晓玲
朴范洙
崔永镇
崔寿永
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN115428117A publication Critical patent/CN115428117A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN202080098883.8A 2020-04-24 2020-04-24 通过等离子体频谱在动态等离子体条件下的过程控制和监控方法 Pending CN115428117A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2020/029898 WO2021216092A1 (en) 2020-04-24 2020-04-24 Method of process control and monitoring in dynamic plasma condition by plasma spectrum

Publications (1)

Publication Number Publication Date
CN115428117A true CN115428117A (zh) 2022-12-02

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ID=78269879

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080098883.8A Pending CN115428117A (zh) 2020-04-24 2020-04-24 通过等离子体频谱在动态等离子体条件下的过程控制和监控方法

Country Status (5)

Country Link
JP (1) JP2023522988A (ko)
KR (1) KR20230002981A (ko)
CN (1) CN115428117A (ko)
TW (1) TW202140847A (ko)
WO (1) WO2021216092A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117148710A (zh) * 2023-09-21 2023-12-01 东莞市晟鼎精密仪器有限公司 一种自适应等离子监控方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610356B2 (ja) * 1988-02-18 1994-02-09 松下電器産業株式会社 プラズマ処理装置およびプラズマ温度測定方法
US5382911A (en) * 1993-03-29 1995-01-17 International Business Machines Corporation Reaction chamber interelectrode gap monitoring by capacitance measurement
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR20110103723A (ko) * 2010-03-15 2011-09-21 삼성전자주식회사 공정 모니터링 장치와, 이를 이용한 공정 모니터링 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117148710A (zh) * 2023-09-21 2023-12-01 东莞市晟鼎精密仪器有限公司 一种自适应等离子监控方法及系统
CN117148710B (zh) * 2023-09-21 2024-02-09 东莞市晟鼎精密仪器有限公司 一种自适应等离子监控方法及系统

Also Published As

Publication number Publication date
KR20230002981A (ko) 2023-01-05
TW202140847A (zh) 2021-11-01
WO2021216092A1 (en) 2021-10-28
JP2023522988A (ja) 2023-06-01

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