CN115411475A - Millimeter wave band elimination filter on adjustable chip - Google Patents
Millimeter wave band elimination filter on adjustable chip Download PDFInfo
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- CN115411475A CN115411475A CN202211069770.2A CN202211069770A CN115411475A CN 115411475 A CN115411475 A CN 115411475A CN 202211069770 A CN202211069770 A CN 202211069770A CN 115411475 A CN115411475 A CN 115411475A
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- 230000008030 elimination Effects 0.000 title abstract description 11
- 238000003379 elimination reaction Methods 0.000 title abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
Abstract
The invention relates to a millimeter wave band-stop filter on a tunable chip. The filter is divided into an upper zigzag line structure and a lower zigzag line structure which are respectively a first zigzag line and a second zigzag line, the first zigzag line and the second zigzag line are mutually coupled, and the first zigzag line and the second zigzag line are the same in physical size and opposite in direction. The periphery of the first zigzag line and the periphery of the second zigzag line surround a grounding ring formed by stacking multiple layers of metal. The band elimination filter works in a millimeter wave band of 60-80GHz, the center frequency is 72GHz, and the band elimination filter has the advantages that the coupling strength of the first zigzag line and the second zigzag line can be controlled through the parameters of the first zigzag line and the second zigzag line, so that the stop band width and the stop band attenuation degree of the band elimination filter are controlled, the ground capacitance between the first zigzag line and the ground ring are utilized, resonance can be generated without adding extra capacitance, the stop band characteristic of the band elimination filter can be adjusted, and the area of the band elimination filter on a chip is effectively reduced.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a millimeter wave band elimination filter on an adjustable chip.
Background
To prevent mutual interference in the rf circuit communication system and suppress some interference signals in the circuit, a filter is often used to block signals in some frequency bands. For a signal to be transmitted, it is necessary to reduce its attenuation as much as possible to let it pass. For interfering signals, noise and spurious signals, which are then suppressed from passing, band-stop filters can be used to suppress these signals, especially for particularly strong interfering signals, which can provide very high attenuation.
Different application scenarios require different performance of the band stop filter. In some frequency bands, the attenuation of useful signals is reduced, and a band-stop filter with the lowest insertion loss is required; some application scenarios require the stopband bandwidth of the stopband filter, and if the stopband bandwidth is too wide, the useful signals can be filtered out, and if the stopband bandwidth is too narrow, all the interference signals cannot be filtered out. On the other hand, as the requirement for integration of functional components in mobile communication is increasing, the area occupancy of each element is also greatly limited, so that a tunable on-chip band-stop filter with a small area is particularly necessary.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art or the related art.
Therefore, the invention aims to provide a miniaturized tunable millimeter wave band elimination filter on a chip.
In order to achieve the above object, the technical solution of the present invention provides a tunable on-chip millimeter wave band-stop filter, including: the first zigzag line, the second zigzag line and the grounding ring;
first zigzag line is four finger end to end's structure, includes: the filter comprises a first finger, a second finger, a third finger and a fourth finger which are parallel to each other, wherein the input end of the filter is connected with the middle point of the first finger, the output end of the filter is connected with the middle point of the fourth finger, the first finger and the fourth finger have the same width and are narrower than the second finger and the third finger, and the second finger and the third finger have the same width;
the second zigzag line is positioned at the lower layer of the first zigzag line, has the same physical size as the first zigzag line, has the opposite directions of the four fingers, and transmits energy in a coupling mode;
the grounding ring surrounds the first zigzag line and the second zigzag line structure, and is achieved in a mode of stacking preset layer metal layers.
Furthermore, the first zigzag line is formed by a top metal layer TM2, and the second zigzag line is formed by a second metal layer TM 1;
the input and output feeder line is composed of a top layer metal TM2 layer.
Further, the distance between the first finger and the second finger and the grounding ring ranges from 1 micron to 5 microns, and the capacitance value of the grounding capacitor is adjusted by adjusting the width of the second finger and the third value and the distance of the grounding ring.
Further, the width of the first finger and the fourth finger is 2-3 microns, and the distance between the first finger and the second finger and the distance between the third finger and the fourth finger is 14 microns.
Further, the length L of each finger is 21-28 microns, and the width of the second and third fingers is 16-26 microns.
The invention has the beneficial effects that:
the distance between the first meander line and the second meander line of the tunable on-chip millimeter wave band-stop filter provided by the invention and the grounding ring is very close, so that enough capacitance to the ground can be generated, resonance can be generated without additional capacitance, and the coupling strength of the first meander line and the second meander line can be controlled by the parameters of the first meander line and the second meander line, thereby controlling the stop band width and the stop band attenuation degree of the band-stop filter. When the two notch distances are close, the attenuation degree of the stop band is larger, and the frequency bandwidth of the stop band is narrower. When the distance between the two notch is longer, the attenuation degree of the stop band is smaller, and the bandwidth of the stop band is wider.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic structural diagram of a tunable on-chip millimeter wave band-stop filter according to the present invention;
FIG. 2 is a schematic view of a TM2 layer structure of a tunable on-chip millimeter wave band-stop filter according to the present invention;
FIG. 3 is a schematic structural diagram of a tunable on-chip millimeter wave band-stop filter TM1 layer according to the present invention;
FIG. 4 is a diagram illustrating the effect of a tunable on-chip millimeter wave band reject filter of the present invention on two latches as a result of changing L;
FIG. 5 is a diagram illustrating the effect of a tunable on-chip millimeter wave band reject filter of the present invention on changing w on two latches;
FIG. 6 is a graph showing a comparison between the simulation result of the tunable on-chip millimeter wave band-stop filter EM and the actual test result of the filter.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention, taken in conjunction with the accompanying drawings and detailed description, is set forth below. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein and, therefore, the scope of the present invention is not limited by the specific embodiments disclosed below.
Fig. 1 shows a schematic structural diagram of a tunable on-chip millimeter wave band-stop filter according to the present invention. As shown in fig. 1, the tunable on-chip millimeter wave band-stop filter includes a first meander line, a second meander line, and a ground ring. Specifically, first zigzag line is the structure that four indicate first position to link to each other, includes: the filter comprises a first finger 4, a second finger 5, a third finger 6 and a fourth finger 7 which are parallel to each other, wherein the input end of the filter is connected with the middle point of the first finger, the output end of the filter is connected with the middle point of the fourth finger, the first finger and the fourth finger are equal in width and narrower than the second finger and the third finger, and the second finger and the third finger are equal in width. The first finger is connected with one end of the second finger, the other end of the second finger is connected with one end of the third finger on the same side, and the other end of the third finger is connected with the fourth finger.
The width of the connecting end of the first finger and the second finger is consistent with that of the first finger, the connecting end of the second finger and the third finger is the same as that of the second finger or the third finger, and the connecting end between the third finger and the fourth finger is the same as that of the fourth finger
The input end of the band elimination filter is connected with the middle point of the first finger, and the output end of the band elimination filter is connected with the middle point of the fourth finger, wherein the first finger and the fourth finger are equal in width and narrower than the second finger and the third finger, and the second finger and the third finger are equal in width; the second meander line has the same physical size and opposite direction with the first meander line,
the grounding ring surrounds the first zigzag line and the second zigzag line structure, and is achieved in a mode of stacking preset layer metal layers.
The first zigzag line is formed by a top metal layer TM2, and the second zigzag line is formed by a second metal layer TM 1; the input and output feed lines are composed of top metal layers from TM 2.
The distance between the first finger and the grounding ring is 1-5 microns, the distance is very close, and the capacitance value of the grounding capacitor is adjusted by adjusting the width of the second finger and the third finger and the distance of the grounding ring.
The width of the first and fourth fingers is 2-3 microns and the distance between the first and second fingers and the third and fourth fingers is 14 microns.
The length L of each finger is 21-28 microns and the width of the second and third fingers is 16-26 microns.
As shown in fig. 2 and 3, the first meander line is implemented in a TM2 layer, the second meander line is implemented in a TM1 layer, and the second meander line and the first meander line are coupled for energy transmission without connection; the grounding ring surrounds the first zigzag line and the second zigzag line structure, and is achieved in a mode of stacking preset layer metal layers.
Fig. 4 is an illustration of the effect of varying the length L of the first and second meander lines on both notch. Fig. 5 is a graph showing the effect on two latches of varying the widths of the first meander line and the second meander line, i.e. the distance between the first meander line and the second meander line and the ground ring. By adjusting the sizes of W and L, the distances between the first zigzag line and the grounding ring and the distances between the second zigzag line and the grounding ring can be adjusted to generate the required capacitance to the ground, so that the invention can generate resonance without additional capacitance and effectively reduce the area of a chip. Controlling W and L of the first meander line and the second meander line essentially controls the coupling strength of the first meander line and the second meander line, thereby controlling two latches of the band-stop filter and adjusting the stop-band characteristic of the band-stop filter. As shown in fig. 4 and 5, when the two notch distances are close, the degree of attenuation of the stop band is large, and the stop band bandwidth is narrow. When the distance between the two notch is far away, the attenuation degree of the stop band is small, and the bandwidth of the stop band is wide.
As shown in FIG. 6, measurements were performed on wafers of 1 to 100GHz using a G-S-G probe using a Keysight 'S vector network analyzer E8361A and a FormFactor' S100 μm spacing (GSG) waveguide infinite probe. The measured center frequency and the center frequency of the EM simulation occurred at approximately 73GHz. Electromagnetic simulation shows that within the range of 65-76GHz, stop band attenuation larger than-20 dB is realized, and the test result is almost consistent with the electromagnetic simulation result, so that the electromagnetic simulation result and the measured result have reasonable consistency in frequency response. The small differences between the electromagnetic simulation and the measurement results are mainly due to the G-S-G pads and the test environment, and these factor processes are not included in the electromagnetic simulation.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A tunable on-chip millimeter wave band reject filter, comprising: the first zigzag line, the second zigzag line and the grounding ring;
first zigzag line is four finger end to end's structure, includes: the filter comprises a first finger, a second finger, a third finger and a fourth finger which are parallel to each other, wherein the input end of the filter is connected with the middle point of the first finger, the output end of the filter is connected with the middle point of the fourth finger, the first finger and the fourth finger have the same width and are narrower than the second finger and the third finger, and the second finger and the third finger have the same width;
the second zigzag line is positioned at the lower layer of the first zigzag line, has the same physical size as the first zigzag line, has the opposite directions of the four fingers, and transmits energy in a coupling mode;
the grounding ring surrounds the first zigzag line and the second zigzag line structure, and is achieved in a mode of stacking preset layer metal layers.
2. The bandpass filter according to claim 1,
the first zigzag line is formed by a top metal layer TM2, and the second zigzag line is formed by a second metal layer TM 1;
the input and output feeder line is composed of a top layer metal TM2 layer.
3. The bandpass filter according to claim 1,
the distance range between the first finger and the grounding ring and the distance range between the second finger and the grounding ring are 1-5 micrometers, and the capacitance value of the grounding capacitor is adjusted by adjusting the width of the second finger and the third value and the distance between the grounding rings.
4. The bandpass filter according to claim 1, wherein the first value and the fourth finger have a width of 2-3 microns, and the distance between the first finger and the second finger and the distance between the third finger and the fourth finger is 14 microns.
5. The bandpass filter of claim 1, wherein the length L of each finger is 21-28 microns, and the width of the second and third fingers is 16-26 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211069770.2A CN115411475B (en) | 2022-09-02 | 2022-09-02 | Adjustable on-chip millimeter wave band-stop filter |
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| CN202211069770.2A CN115411475B (en) | 2022-09-02 | 2022-09-02 | Adjustable on-chip millimeter wave band-stop filter |
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