CN112002979B - Filtering power divider and communication system - Google Patents
Filtering power divider and communication system Download PDFInfo
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- CN112002979B CN112002979B CN202011075529.1A CN202011075529A CN112002979B CN 112002979 B CN112002979 B CN 112002979B CN 202011075529 A CN202011075529 A CN 202011075529A CN 112002979 B CN112002979 B CN 112002979B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
The embodiment of the application discloses a filtering power divider and a communication system, wherein the filtering power divider is of a multilayer structure, the multilayer structure comprises a first substrate layer and a second substrate layer, a first metal layer is arranged between the first substrate layer and the second substrate layer, a microstrip line layer is arranged on the upper side of the first substrate layer, and a second metal layer is arranged on the lower side of the second substrate layer; the microstrip line layer adopts a step impedance Wilkinson power divider structure, and the first metal layer, the second substrate layer and the second metal layer are provided with substrate integrated defect ground structure resonance units with three-dimensional structures. By adopting the technical scheme provided by the embodiment of the application, the wide stop band and the low radiation loss of the filter power divider can be realized at the same time.
Description
Technical Field
The present application relates to the field of communications technologies, and in particular, to a filtering power divider and a communications system.
Background
With the development of communication technology, the increase of the operating frequency band of the communication system leads to the increase of useless spurious signals received by the communication system, which makes the modern communication system have strong suppression to out-of-band signals. Meanwhile, the integration level of the communication system is improved, and the passive devices in the communication system are required to generate lower radiation when working, so that the influence of electromagnetic radiation on other parts in the communication system is reduced, and the electromagnetic compatibility of the communication system is improved.
The filtering power divider is a power divider with a filter characteristic, and has a wide application because it has both a filtering characteristic and a power dividing characteristic. Therefore, the filtering power divider with good out-of-band spurious signal suppression function and low radiation loss can greatly reduce the complexity of a communication system and simplify the design. In the existing wide stopband filtering power divider, many designs adopt a Defected Ground Structure (DGS) to generate a slow wave effect, inhibit higher harmonics and realize wide stopband performance. However, the defected ground structure can generate large radiation loss, which is not favorable for integration in a complex communication system. In addition, some of the filter power dividers use a Substrate Integrated Waveguide (SIW) to reduce radiation loss, but cannot generate a wide stop band effect.
Disclosure of Invention
The embodiment of the application provides a filtering power divider and a communication system, which are beneficial to solving the problem that the filtering power divider in the prior art cannot realize wide stop band and low radiation loss at the same time.
In a first aspect, an embodiment of the present application provides a filter power divider, where the filter power divider is a multilayer structure, and the multilayer structure includes a first substrate layer and a second substrate layer, a first metal layer is disposed between the first substrate layer and the second substrate layer, a microstrip line layer is disposed on an upper side of the first substrate layer, and a second metal layer is disposed on a lower side of the second substrate layer;
the microstrip line layer adopts a step impedance Wilkinson power divider structure, and the first metal layer, the second substrate layer and the second metal layer are provided with substrate integrated defect ground structure resonance units with three-dimensional structures.
Preferably, the step impedance wilkinson power divider includes an input unit, a first output unit and a second output unit, the input unit is connected to the first output unit and the second output unit through microstrip lines, and the first output unit and the second output unit are connected through isolation resistors.
Preferably, the input unit includes a first T-shaped microstrip line, the first T-shaped microstrip line includes a longitudinal microstrip line and a transverse microstrip line, one end of the longitudinal microstrip line is connected to the transverse microstrip line, a free end of the longitudinal microstrip line serves as an input port, and two ends of the transverse microstrip line are connected to the first output unit and the second output unit, respectively.
Preferably, the first output unit includes a second T-shaped microstrip line and a third T-shaped microstrip line, the second T-shaped microstrip line and the third T-shaped microstrip line respectively include a transverse microstrip line and a longitudinal microstrip line, the longitudinal microstrip lines of the second T-shaped microstrip line and the third T-shaped microstrip line are disposed close to each other, and the transverse microstrip lines of the second T-shaped microstrip line and the third T-shaped microstrip line are disposed away from each other;
the second output unit comprises a fourth T-shaped microstrip line and a fifth T-shaped microstrip line, the fourth T-shaped microstrip line and the fifth T-shaped microstrip line respectively comprise a transverse microstrip line and a longitudinal microstrip line, the longitudinal microstrip lines of the fourth T-shaped microstrip line and the fifth T-shaped microstrip line are arranged close to each other, and the transverse microstrip lines of the fourth T-shaped microstrip line and the fifth T-shaped microstrip line are arranged away from each other;
the free end of the transverse microstrip line of the second T-shaped microstrip line is a first output port, the free end of the transverse microstrip line of the fifth T-shaped microstrip line is a second output port, and the free end of the transverse microstrip line of the third T-shaped microstrip line is connected with the free end of the transverse microstrip line of the fourth T-shaped microstrip line through an isolation resistor.
Preferably, the second T-shaped microstrip line and/or the fifth T-shaped microstrip line is provided with a microstrip open-circuit stub.
Preferably, a transmission zero is provided on the high frequency side of the pass band.
Preferably, a metalized via is further included, the metalized via penetrating through the multilayer structure.
Preferably, the number of the metalized vias is one or more than one, the metalized vias are arranged around the defect area of the first metal layer, and the metalized vias, the second substrate layer and the second metal layer together form a package of the defect area.
Preferably, the first metal layer includes four defect regions, and the four defect regions are sequentially arranged opposite to the second T-shaped microstrip line, the third T-shaped microstrip line, the fourth T-shaped microstrip line, and the fifth T-shaped microstrip line.
In a second aspect, an embodiment of the present application provides a communication system, where the communication system includes the filtering power divider of any one of the first aspect.
The filtering power divider and the communication system provided by the application have the following advantages:
1. the filter characteristic of the filter power splitter can be realized based on the fundamental frequency resonance characteristic of the self-packaged defected ground resonance unit. In addition, the microstrip line is introduced as a feeder line, so that higher harmonics of fundamental frequency signals can be suppressed, and a wide stop band and a good stop band suppression degree are realized. Meanwhile, due to the fact that the defect area is packaged and wrapped and the complete ground plane structure is adopted, the filtering power divider is easy to integrate in a communication system, and generates smaller radiation when in work.
2. The step impedance Wilkinson power divider can realize impedance matching of the ports of the filtering power divider and better isolation between the output ports. The folded step impedance line structure can reduce the size of the power divider to the maximum extent and reduce the cost.
3. The T-shaped microstrip line is introduced as an input feeder line, the capacitive load effect of the T-shaped microstrip line can push the fundamental frequency to the low frequency, the harmonic wave of the high frequency is restrained, the stop band characteristic is further optimized, and the size of the resonance unit is reduced.
4. Microstrip open-circuit branches are added on the T-shaped feeder lines of the two output ports, and a transmission zero point is added on the high-frequency side of the passband, so that the selectivity of the passband can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic perspective view of a filtering power divider according to an embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional view of a filtering power divider according to an embodiment of the present disclosure;
fig. 3 is a schematic plan view of a filtering power divider according to an embodiment of the present application;
fig. 4 is a schematic diagram of simulation and test frequency responses of a filtering power divider according to an embodiment of the present disclosure;
the symbols in the figures are represented as: 100-a first substrate layer, 200-a second substrate layer, 300-a first metal layer, 301-a slow wave resonance unit, 400-a second metal layer, 500-a microstrip line layer, 510-an input unit, 511-a first T-shaped microstrip line, 520-a first output unit, 521-a second T-shaped microstrip line, 522-a third T-shaped microstrip line, 523-a microstrip open-circuit branch, 530-a second output unit, 531-a fourth T-shaped microstrip line, 532-a fifth T-shaped microstrip line, 533-a microstrip open-circuit branch, 600-a metalized via hole and an R-an isolation resistor.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The following are explanations of terms related to the embodiments of the present application.
DGS (defected Ground structure) structure of the defect;
substrate Integrated Defected Ground Structure (SIDGS);
a SIW (substrate Integrated waveguide) substrate Integrated waveguide;
HMT/DGS (Hybrid microstructure T-stub/DGS) Hybrid Microstrip/defected ground structure;
a Microstrip line;
the slow wave effect is a physical characteristic, and the phenomenon can push higher harmonics of a fundamental frequency signal of the filter to higher frequency, generate a good harmonic suppression function and realize a wide stop band. Meanwhile, the area of the filtering power divider can be reduced due to the slow wave effect, and the cost of the filtering power divider is reduced while miniaturization is realized.
The existing wide stop band filtering power divider generally includes two types: one is to adopt a Defected Ground Structure (DGS) to generate a slow wave effect, suppress higher harmonics and realize wide stop band performance, but the defected ground structure can generate larger radiation loss and is not beneficial to being integrated in a complex communication system; another approach is to use Substrate Integrated Waveguide (SIW) to reduce radiation loss, but not to produce wide stop band effect.
Aiming at the problem that the filtering power divider in the prior art cannot realize a wide stop band and low radiation loss at the same time, the embodiment of the application provides a filtering power divider and a communication system, which are described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic perspective view of a filter power divider provided in an embodiment of the present application, fig. 2 is a schematic cross-sectional view of the filter power divider provided in the embodiment of the present application, fig. 3 is a schematic plan view of the filter power divider provided in the embodiment of the present application, as shown in fig. 1 to fig. 3, the filter power divider provided in the embodiment of the present application includes a first substrate layer 100 and a second substrate layer 200, a first metal layer 300 is disposed between the first substrate layer 100 and the second substrate layer 200, a microstrip line layer 500 is disposed on an upper side of the first substrate layer 100, and a second metal layer 400 is disposed on a lower side of the second substrate layer 200; the microstrip line layer 500 adopts a step impedance Wilkinson power divider structure, and the first metal layer 300, the second metal layer 400 and the second substrate layer 200 are provided with a slow wave resonance unit 301 of a substrate integrated defect ground structure.
It can be understood that, in the multi-layer structure, the first metal layer 300 is partially removed by the complete metal to form a defect structure, i.e. to form a defected ground structure DGS. The second metal layer 400 is a complete piece of metal that serves as a reference ground for the structure. Meanwhile, the second metal layer 400 and the second substrate layer 200 together constitute a substrate integrated package of a defected ground structure. The first metal layer 300, the second substrate layer 200 and the second metal layer 400 form a substrate-integrated defected ground structure siggs.
In the embodiment of the application, the microstrip line and the defect area of the first metal layer generate slow wave characteristics, and push higher harmonics of fundamental frequency signals to high frequency, so that a wide stop band and a better stop band suppression degree are realized. In addition, the radiation loss of the defected ground structure DGS is well inhibited due to the existence of the second metal layer. The step impedance Wilkinson power divider can realize impedance matching of the ports of the filtering power divider and better isolation between the output ports. The folded step impedance line structure can reduce the size of the power divider to the maximum extent and reduce the cost.
Specifically, the step impedance wilkinson power divider in the filtering power divider provided in the embodiment of the present application includes one input unit 510 and two output units, for convenience of description, the two output units are respectively defined as a first output unit 520 and a second output unit 530, the input unit 510 is respectively connected to the first output unit 520 and the second output unit 530 through a microstrip line, and the first output unit 520 and the second output unit 530 are connected through an isolation resistor R. The input unit 510 includes a first T-shaped microstrip line 511, where the first T-shaped microstrip line 511 includes a longitudinal microstrip line and a transverse microstrip line, one end of the longitudinal microstrip line is connected to the transverse microstrip line, a free end of the longitudinal microstrip line is used as an input port (port 1 shown in the drawing), and two ends of the transverse microstrip line are respectively connected to the first output unit 520 and the second output unit 530.
In the embodiment of the application, the T-shaped microstrip line is introduced as the input feeder line, and the capacitive load effect can push the fundamental frequency to the low frequency and push the harmonic wave to the high frequency, so that the stop band characteristic is further optimized and the size of the resonance unit is reduced.
In an alternative embodiment, the first output unit 520 includes a second T-shaped microstrip line 521 and a third T-shaped microstrip line 522, where the second T-shaped microstrip line 521 and the third T-shaped microstrip line 522 include a transverse microstrip line and a longitudinal microstrip line, respectively, the longitudinal microstrip lines of the second T-shaped microstrip line 521 and the third T-shaped microstrip line 522 are disposed close to each other, and the transverse microstrip lines of the second T-shaped microstrip line 521 and the third T-shaped microstrip line 522 are disposed away from each other;
the second output unit 530 includes a fourth T-shaped microstrip 531 and a fifth T-shaped microstrip 532, where the fourth T-shaped microstrip 531 and the fifth T-shaped microstrip 532 respectively include a transverse microstrip and a longitudinal microstrip, the longitudinal microstrips of the fourth T-shaped microstrip 531 and the fifth T-shaped microstrip 532 are disposed close to each other, and the transverse microstrips of the fourth T-shaped microstrip 531 and the fifth T-shaped microstrip 532 are disposed away from each other; the free end of the transverse microstrip line of the second T-shaped microstrip line 521 is a first output port (port 2 shown in the drawing), the free end of the transverse microstrip line of the fifth T-shaped microstrip line 532 is a second output port (port 3 shown in the drawing), and the free end of the transverse microstrip line of the third T-shaped microstrip line 522 is connected to the free end of the transverse microstrip line of the fourth T-shaped microstrip line 531 through an isolation resistor R. The second T-shaped microstrip line 521 and/or the fifth T-shaped microstrip line 532 is provided with microstrip open- circuit branches 523 and 533. Optionally, a transmission zero is provided on the high frequency side of the passband.
In the embodiment of the present application, the first metal layer 300 includes four slow-wave resonant units 301, and the four slow-wave resonant units 301 are sequentially disposed opposite to the second T-shaped microstrip line 521, the third T-shaped microstrip line 522, the fourth T-shaped microstrip line 531 and the fifth T-shaped microstrip line 532.
In an alternative embodiment, a metallized via 600 is further disposed on the multi-layer structure, and the metallized via 600 penetrates through the multi-layer structure. Preferably, the number of the metalized vias 600 is one or more than one, and the metalized vias 600 are arranged around the defect area. The metallized via 600 disposed around the defective region can reduce the radiation level of the first metal layer 300, thereby reducing the impact on other devices in the communication volume.
The microstrip open-circuit branch is added on the T-shaped feeder lines of the two output ports, a transmission zero point is added on the high-frequency side of the passband, and the selectivity of the passband can be improved.
In a specific implementation, the center frequency of the filter power divider is determined by the physical dimensions of the structure. For example, increase w1，13，14，15，16，17These dimensions can reduce the center frequency; the bandwidth of the filtering power divider can be adjusted by adjusting d1，d2To make adjustments; increase d1Decrease d2The filter bandwidth is increased. At the same time, the input impedance of port 1 is w4，w5，18，19By changing these parameters, the return loss of the port 1 can be reduced, and the impedance matching effect can be achieved. Meanwhile, the impedance matching of the ports 2 and 3 and the isolation between the ports can be influenced by changing the resistance value of the isolation resistor R, and the better impedance matching and isolation of the output port can be realized by selecting the proper isolation resistor R.
Fig. 4 is a schematic diagram of simulation and test frequency response of a filter power divider according to an embodiment of the present application, in which the filter power divider used in fig. 4 uses an RO4003C high-frequency plate (with a relative dielectric constant of 3.55 and a thickness h)1Is 0.203mm and has a thickness h20.303mm) and tested, the simulation and test results of the filter power divider are shown in fig. 4, the center frequency of the pass band is 2.9GHz, the minimum value of the insertion loss of the pass band is 1.0dB, and the isolation is more than 20 dB. The stop band can be expanded to 25GHz on the premise of low radiation loss, namely 8.71 times of fundamental frequency signals, and the inhibition degree of the stop band reaches-28 dB. The isolation degree of the stop band is larger than 25dB, and the effect of broadband isolation is achieved.
Based on the power divider, an embodiment of the present application further provides a communication system, where the communication system includes the power divider shown in the foregoing embodiment.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. The term "comprising", without further limitation, means that the element so defined is not excluded from the group consisting of additional identical elements in the process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The same and similar parts in the various embodiments in this specification may be referred to each other. Especially, for the terminal embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant points can be referred to the description in the method embodiment.
The above-described embodiments of the present application do not limit the scope of the present application.
Claims (7)
1. The filter power divider is characterized by being of a multilayer structure, wherein the multilayer structure comprises a first substrate layer and a second substrate layer, a first metal layer is arranged between the first substrate layer and the second substrate layer, a microstrip line layer is arranged on the upper side of the first substrate layer, and a second metal layer is arranged on the lower side of the second substrate layer;
the microstrip line layer adopts a step impedance Wilkinson power divider structure, and substrate integrated defect ground structure resonance units of a three-dimensional structure are arranged on the first metal layer, the second substrate layer and the second metal layer;
wherein the content of the first and second substances,
the step impedance Wilkinson power divider comprises an input unit, a first output unit and a second output unit, wherein the input unit is respectively connected with the first output unit and the second output unit through microstrip lines, and the first output unit is connected with the second output unit through an isolation resistor;
the first output unit comprises a second T-shaped microstrip line and a third T-shaped microstrip line, the second T-shaped microstrip line and the third T-shaped microstrip line respectively comprise a transverse microstrip line and a longitudinal microstrip line, the longitudinal microstrip lines of the second T-shaped microstrip line and the third T-shaped microstrip line are arranged close to each other, and the transverse microstrip lines of the second T-shaped microstrip line and the third T-shaped microstrip line are arranged away from each other;
the second output unit comprises a fourth T-shaped microstrip line and a fifth T-shaped microstrip line, the fourth T-shaped microstrip line and the fifth T-shaped microstrip line respectively comprise a transverse microstrip line and a longitudinal microstrip line, the longitudinal microstrip lines of the fourth T-shaped microstrip line and the fifth T-shaped microstrip line are arranged close to each other, and the transverse microstrip lines of the fourth T-shaped microstrip line and the fifth T-shaped microstrip line are arranged away from each other;
the free end of the transverse microstrip line of the second T-shaped microstrip line is a first output port, the free end of the transverse microstrip line of the fifth T-shaped microstrip line is a second output port, and the free end of the transverse microstrip line of the third T-shaped microstrip line is connected with the free end of the transverse microstrip line of the fourth T-shaped microstrip line through an isolation resistor;
the first metal layer comprises four defect areas, and the four defect areas are sequentially arranged opposite to the second T-shaped microstrip line, the third T-shaped microstrip line, the fourth T-shaped microstrip line and the fifth T-shaped microstrip line.
2. The filter power divider according to claim 1, wherein the input unit comprises a first T-shaped microstrip line, the first T-shaped microstrip line comprises a longitudinal microstrip line and a transverse microstrip line, one end of the longitudinal microstrip line is connected to the transverse microstrip line, a free end of the longitudinal microstrip line serves as an input port, and two ends of the transverse microstrip line are respectively connected to the first output unit and the second output unit.
3. The filter power divider of claim 1, wherein the second T-shaped microstrip line and/or the fifth T-shaped microstrip line is provided with a microstrip open-circuit stub.
4. The filtering power divider of claim 1, wherein a transmission zero is provided on a high frequency side of the pass band.
5. The filtering power divider of claim 1, further comprising a metalized via that extends through the multilayer structure.
6. The filtering power divider of claim 5, wherein the number of the metalized vias is multiple, the metalized vias are disposed around a defective area of the first metal layer, and the metalized vias, the second substrate layer, and the second metal layer collectively form a package of the defective area.
7. A communication system comprising a filter power divider according to any of claims 1-6.
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| TWI683535B (en) * | 2016-02-10 | 2020-01-21 | 日商村田製作所股份有限公司 | Diplexer |
| CN114744388A (en) * | 2022-03-25 | 2022-07-12 | 电子科技大学 | Grounded coplanar waveguide spiral line defected ground structure gain equalizer |
| CN117638444B (en) * | 2024-01-25 | 2024-04-09 | 中天通信技术有限公司 | Waveguide filtering power divider |
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