CN115398628A - 测试用晶片 - Google Patents

测试用晶片 Download PDF

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Publication number
CN115398628A
CN115398628A CN202080099890.XA CN202080099890A CN115398628A CN 115398628 A CN115398628 A CN 115398628A CN 202080099890 A CN202080099890 A CN 202080099890A CN 115398628 A CN115398628 A CN 115398628A
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CN
China
Prior art keywords
test
external
command
memory arrays
module
Prior art date
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Pending
Application number
CN202080099890.XA
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English (en)
Inventor
廖昱程
徐成宇
邱青松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Times Full Core Storage Technology Co ltd
Original Assignee
Cecil Business Mission Technology Holdings Ltd
Beijing Times Full Core Storage Technology Co ltd
Jiangsu Advanced Memory Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cecil Business Mission Technology Holdings Ltd, Beijing Times Full Core Storage Technology Co ltd, Jiangsu Advanced Memory Semiconductor Co Ltd filed Critical Cecil Business Mission Technology Holdings Ltd
Publication of CN115398628A publication Critical patent/CN115398628A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

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  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

本发明提供了一种测试用晶片，包括：多个存储器阵列，不同的所述存储器阵列之间的存储器参数至少有一个是不同的；以及一测试电路，所述测试电路用于获取外部测试命令，并根据所述外部测试命令对不同的所述存储器阵列进行测试并收集测试结果。

Description

PCT国内申请，说明书已公开。

Claims (4)

  1. PCT国内申请，权利要求书已公开。
CN202080099890.XA 2020-11-23 2020-11-23 测试用晶片 Pending CN115398628A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/130936 WO2022104804A1 (zh) 2020-11-23 2020-11-23 测试用晶片

Publications (1)

Publication Number Publication Date
CN115398628A true CN115398628A (zh) 2022-11-25

Family

ID=81708316

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080099890.XA Pending CN115398628A (zh) 2020-11-23 2020-11-23 测试用晶片

Country Status (2)

Country Link
CN (1) CN115398628A (zh)
WO (1) WO2022104804A1 (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854497B1 (ko) * 2006-07-10 2008-08-26 삼성전자주식회사 반도체 메모리 장치 및 이의 동작 방법
CN102540050A (zh) * 2010-12-20 2012-07-04 安凯(广州)微电子技术有限公司 一种测试芯片的方法及装置
CN102903392B (zh) * 2011-07-25 2015-06-03 中国科学院微电子研究所 存储单元测试电路及其测试方法
WO2021077389A1 (zh) * 2019-10-25 2021-04-29 江苏时代全芯存储科技股份有限公司 记忆体元件阵列
WO2021077388A1 (zh) * 2019-10-25 2021-04-29 江苏时代全芯存储科技股份有限公司 记忆体测试阵列

Also Published As

Publication number Publication date
WO2022104804A1 (zh) 2022-05-27

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Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20231218

Address after: Building 2D, 802, Zhongguancun Integrated Circuit Design Park, No. 9 Fenghao East Road, Haidian District, Beijing

Applicant after: Beijing times full core storage technology Co.,Ltd.

Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094

Applicant before: Beijing times full core storage technology Co.,Ltd.

Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd.

Applicant before: Cecil business mission Technology Holdings Ltd.

TA01 Transfer of patent application right