CN115386850B - Magnetron sputtering deposition device - Google Patents
Magnetron sputtering deposition device Download PDFInfo
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- CN115386850B CN115386850B CN202211045521.XA CN202211045521A CN115386850B CN 115386850 B CN115386850 B CN 115386850B CN 202211045521 A CN202211045521 A CN 202211045521A CN 115386850 B CN115386850 B CN 115386850B
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- 238000000151 deposition Methods 0.000 title claims abstract description 65
- 230000008021 deposition Effects 0.000 title claims abstract description 63
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 34
- 239000011261 inert gas Substances 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 230000005684 electric field Effects 0.000 claims abstract description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
- 239000013077 target material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a magnetron sputtering deposition device, which comprises a deposition chamber, a target, a magnetron, a wafer base, an annular electrode and an alternating current power supply, wherein the magnetron is arranged on the deposition chamber; the target is arranged above the interior of the deposition chamber, the wafer pedestal is arranged at the bottom of the deposition chamber and opposite to the target, and the wafer pedestal is used for placing a wafer to be deposited; an annular electrode is arranged between the target and the wafer base, and the projection surface of the target is positioned in the outline of the projection surface of the annular electrode; the annular electrode is connected with an alternating current power supply and is used for providing a central symmetrical periodic variation electric field for the deposition chamber after the inert gas is ionized so as to guide inert gas ions to deflect and bombard the target, and the central symmetrical periodic variation electric field is formed between the target and the wafer so that the inert gas ions can perform scanning bombardment on the target, so that the consumption of the target is more uniform, the utilization rate of the target is improved, and the use cost of the target is saved.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a magnetron sputtering deposition device.
Background
In the production of semiconductors, magnetron sputtering deposition techniques are used to deposit metal on the target surface. The magnetron sputtering deposition technology is to bombard the target material by using ionized inert gas ions under the combined action of an electric field and a magnetic field in a vacuum environment, so that the target material is ejected in the form of ions, atoms or molecules to deposit and form a film on a wafer. The magnetron sputtering deposition technology can be used for depositing metal films of aluminum, copper, gold, platinum and the like so as to form metal contact, metal interconnection and other processes. In the magnetron sputtering deposition process, the magnetron produces uneven electric field on the surface of the target, so that uneven consumption of the target can be caused, the target is used up or nearly used up in a region with high consumption speed, frequent target replacement is required, and the target is not used in a region with low consumption speed, so that the target is wasted.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a magnetron sputtering deposition device, which can improve the planarization degree of the target in the sputtering process, make the consumption of the target more uniform, improve the utilization rate of the target, and save the use cost of the target.
The embodiment of the specification provides the following technical scheme:
a magnetron sputtering deposition device comprises a deposition chamber, a target, a magnetron, a wafer base, an annular electrode and an alternating current power supply;
the target is arranged above the inside of the deposition chamber, the wafer pedestal is arranged at the bottom of the deposition chamber and opposite to the target, and the wafer pedestal is used for placing a wafer to be deposited;
the annular electrode is arranged between the target and the wafer base, and the projection surface of the target is positioned in the outline of the projection surface of the annular electrode;
the annular electrode is connected with the alternating current power supply and is used for providing a central symmetrical periodic variation electric field for the deposition chamber after the inert gas is ionized so as to guide inert gas ions to deflect and bombard the target.
In the scheme, the annular electrode is added between the target and the wafer base and is connected with the alternating current power supply, a periodically-changing electric field which is symmetrical along the center of the annular electrode is formed between the target and the wafer by the annular electrode under the action of the alternating current, ionized inert gas ions deflect under the action of the electric field, so that the inert gas ions perform reciprocating scanning bombardment on the target, the consumption of the target is more uniform, the utilization rate of the target is improved, and the use cost of the target is saved.
The embodiments of the present specification also provide an aspect, in which the ring electrode is disposed on a side close to the target in the axial direction.
The embodiment of the specification also provides a scheme that the annular electrode is fixed inside the deposition chamber and is insulated from the inner wall of the deposition chamber;
or, the ring electrode is fixed outside the deposition chamber and insulated from the outer wall of the deposition chamber.
The embodiment of the specification also provides a scheme, wherein the central axis of the annular electrode coincides with the central axis of the target.
The embodiment of the specification also provides a scheme, wherein the central axis of the annular electrode coincides with the central axis of the wafer pedestal.
The embodiment of the specification also provides a scheme, wherein the height of the annular electrode is 2 cm-30 cm; preferably, the height of the ring electrode is 10cm.
The embodiment of the specification also provides a scheme, wherein holes are uniformly formed in the annular electrode.
The embodiment of the specification also provides a scheme, wherein the annular electrode is provided with N grooves along the circumferential direction, so that the annular electrode is divided into N+1 annular electrode areas, and each annular electrode area is connected with the alternating current power supply.
The embodiment of the specification also provides a scheme, wherein the power of the alternating current power supply is 100-1000W; preferably, the power of the alternating current power supply is 300W.
The embodiment of the specification also provides a scheme, wherein the frequency of the alternating current power supply is 220 Hz-2 MHz; preferably, the frequency of the alternating current power supply is 20KHz.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least: according to the magnetron sputtering deposition device provided by the invention, under the action of alternating current, the annular electrode forms the central symmetrical periodic change electric field, specifically, under the change of alternating current, the direction of the electric field is periodically changed, so that ionized inert gas ions deflect under the electric field, and under the drive of the periodic electric field, the inert gas ions can scan the surface of a target material back and forth, the target material in each area is uniformly consumed, the utilization rate of the target material is improved, the replacement time of the target material is prolonged, and the use cost of the target material is saved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art magnetron sputtering deposition apparatus;
FIG. 2 is a schematic illustration of a magnetron sputtering planar target not used in the prior art;
FIG. 3 is a schematic illustration of a magnetron sputtering planar target after use in the prior art;
FIG. 4 is a schematic side view of a magnetron sputter deposition apparatus with ring electrodes mounted in one embodiment of the invention;
FIG. 5 is a schematic top view of a ring electrode in one embodiment of the invention;
FIG. 6 is a schematic top view of a ring electrode in one embodiment of the invention when negatively charged;
FIG. 7 is a schematic top view of a ring electrode in one embodiment of the invention when positively charged;
FIG. 8 is a comparison of the effects of a prior art magnetron sputtering deposition apparatus with ring electrodes installed;
the device comprises a deposition chamber 10, a deposition chamber 12, a direct current power supply 20, a target 30, a magnetron 40, a wafer base 50, a wafer 60, a ring electrode 70, an alternating current power supply 80 and inert gas positive ions.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concepts of the application by way of illustration, and only the components related to the application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
It is to be understood that "connection of component a to component B" means that component a is directly in contact with component B or that component a is indirectly connected to component B via other components. The terms "upper", "lower", "inner", "outer", "side", and the like, as described in the exemplary embodiments of the present specification, are described at the angles shown in the drawings, and should not be construed as limiting the exemplary embodiments of the present specification.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
The prior art magnetron sputtering deposition apparatus shown in fig. 1 includes a wafer pedestal 40, a target 20, a deposition chamber 10, and a magnetron 30, and a wafer 50 is positioned on the wafer pedestal 40. Wherein the target 20 is a circular planar structure, made of metal, and is disposed in the deposition chamber 10. As shown in fig. 2, the unused target 20 is flat. During sputter deposition, the inert gas positive ions 80 are ionized by the high energy provided by the DC power supply 12, and the ionized inert gas positive ions 80 bombard the target 20 (as a target) such that the target 20 is ejected in the form of ions, atoms, or molecules to deposit a metal film on the wafer 50.
Because each magnetron sputtering deposition consumes metal on the target 20, the electric field generated by the magnetron 30 on the surface of the target 20 is uneven, and the area of the electric field intensity is bombarded by inert gas positive ions more than the area of the weak electric field, so that the consumption of the target 20 is uneven, as shown in fig. 3, the surface of the target 20 is wavy, the whole target 20 needs to be frequently replaced in the deposition process, and when the target 20 is replaced, the target in a part of areas is consumed, and the target 20 in a part of areas is not utilized, thereby causing the waste of the target 20, and especially when noble metal is used as a deposition material, the economic cost of a wafer manufacturing enterprise is seriously increased.
The inventor provides a new magnetron sputtering deposition equipment with increased period variable electric field, the deposition equipment is based on the existing deposition equipment, a period variable electric field is added between a target and a wafer base, inert gas positive ions introduced into the deposition equipment are guided to generate periodic deflection in each change period, so that the inert gas positive ions are prevented from gathering towards a high electric field area on the target, the inert gas positive ions can bombard the target in a scanning mode through the periodic deflection, the consumption of the target is more uniform, the planarization degree of the target in the sputtering process is improved, the utilization rate of the target is improved, the purposes of saving the target and prolonging the replacement period are achieved, and the generation cost is reduced.
The following describes the technical solutions provided by the embodiments of the present application with reference to the accompanying drawings.
The magnetron sputtering deposition apparatus shown in fig. 4 and 5 includes a deposition chamber 10, a target 20, a magnetron 30, a wafer pedestal 50, a ring electrode 60, and an ac power supply 70.
As shown in fig. 4, the target 20 is disposed above the interior of the deposition chamber 10, i.e., at the upper inner wall of the deposition chamber 10, and the wafer susceptor 50 is disposed at the bottom of the deposition chamber 10, and the wafer susceptor 50 is disposed opposite to the target 20, and the wafer susceptor 50 is used for placing the wafer 50 to be deposited.
An annular electrode 60 is disposed between the target 20 and the wafer pedestal 50, the target 20 is circular, the horizontal projection of the wafer pedestal 50 is a circular ring, and in order to form an electric field with a sufficiently large area, the wafer pedestal 50 needs to be disposed in a circular ring shape larger than the target 20, that is, the projection surface of the target 20 is located within the projection surface contour line of the annular electrode 60.
The ring electrode 60 is connected to an ac power supply 70, and the ring electrode 60 provides a periodically-varying electric field with central symmetry to the deposition chamber 10 after the inert gas is ionized under the action of the ac power, so as to guide the inert gas ions to deflect and bombard the target 20. Specifically, taking the example that the inert gas is ionized into inert gas positive ions 80 by the dc power supply 12, as shown in fig. 6, when the ac power supply 70 supplies power in the negative half cycle, the ring electrode 60 is negatively charged, and the inert gas positive ions 80 are pulled toward the ring electrode 60; as shown in fig. 7, when the ac power supply 70 supplies power at the negative half cycle, the ring electrode 60 is positively charged and inert gas positive ions 80 are pushed away from the ring electrode 60.
In the above scheme, the periodically-changing electric field drives the inert gas positive ions 80 entering the electric field to reciprocally scan the surface of the target 20, so that the inert gas positive ions 80 are prevented from gathering in the region where the electric field strength is applied to the target 20, the inert gas positive ions 80 can uniformly scan different regions on the surface of the target 20, so that the target 20 in each region is uniformly consumed, grooves or wave shapes on the target 20 are avoided, the flatness of the target 20 in the sputtering process is improved, the utilization rate of the target 20 is improved, the replacement time of the target 20 is prolonged, and the use cost of the target 20 is saved. For example, as shown in fig. 8, taking a titanium target with the same size and thickness as an example, using a deposition apparatus of the prior art, when the deposition apparatus is used for 10 days, the target material in the existing partial area is used up, the target utilization is 70%, and the uniformity of the film on the surface of the target (i.e., the film formed by the surface facing the wafer side under the bombardment of the inert gas positive ions 80) is poor; by using the deposition device provided by the scheme, the replacement time can be prolonged to 15 days, the utilization rate of the target material is increased to 98%, and the uniformity of the film on the surface of the target material is obviously improved.
If the inert gas is ionized into inert gas negative ions by the direct current power supply, the device can also be applied to the magnetron sputtering deposition device (not shown in the figure) with the annular electrode and the alternating current power supply, and specifically, when the annular electrode is positively charged, the negative ions are pulled to the annular electrode; when the ring electrode is negatively charged, the negative ions are pushed away from the ring electrode, thereby uniformly sweeping different areas of the target surface.
In some embodiments, as shown in FIG. 4, the ring electrode 60 is mounted along its own central axis on the side near the target 20. By arranging the periodically-changed electric field close to the target 20, the influence of the inert gas ions on the areas with different electric field intensities on the surface of the target 20 can be avoided as much as possible, and the scanning bombardment effect is ensured.
In some embodiments, as shown in fig. 4 and 5, the ring electrode 60 is fixed inside the deposition chamber 10 and insulated from the inner wall of the deposition chamber 10.
In some embodiments, the ring electrode 60 is fixed outside the deposition chamber 10 and insulated from the outer wall of the deposition chamber 10.
In some embodiments, the central axis of the ring electrode 60 coincides with the central axis of the target 20, thereby making the scanning bombardment of inert gas ions on the target 20 more uniform.
In some embodiments, the central axis of the ring electrode 60, the central axis of the target 20, and the central axis of the wafer pedestal 50 coincide.
In some embodiments, the height of the ring electrode 60 is 2cm to 30cm, where the direction of the height is parallel to the direction of the central axis of the ring electrode 60. Preferably, the height of the ring electrode 60 is 10cm. More preferably, an annular electrode 60 having a height of 10cm is disposed adjacent to the target 20.
In the scheme, the annular electrodes with certain heights are arranged, so that a plurality of layers of parallel electric fields can be formed in the cavity area in the middle of the annular electrodes, and inert gas ions can be guided to deflect better.
In some embodiments, holes are also uniformly formed in the ring electrode 60. The shape of the hole is not limited, and the hole may be a hole with various shapes such as a round hole, a square hole, a waist-shaped hole, etc. It should be noted that, the ring electrode 60 may be provided with holes of different shapes, and the holes of the same shape are uniformly distributed on the ring electrode 60.
In some embodiments, the ring electrode 60 is circumferentially grooved with N grooves, dividing one ring electrode 60 into n+1 ring electrode areas, each of which is connected to an ac power source 70.
In some embodiments, the magnetron sputter deposition apparatus may be provided with a plurality of ring electrodes 60, each ring electrode 60 being connected to an ac power supply 70. The ring electrodes may be of the same size and stacked one on top of the other in the axial direction with a gap between adjacent ring electrodes 60 that meets a first predetermined distance. The ring electrodes 60 may be sequentially reduced in size and sequentially sleeved in the radial direction, and a gap satisfying the second preset distance is left between adjacent ring electrodes 60, and it should be noted that the inner diameter of the horizontal projection of the innermost ring electrode 60 is larger than the projection radius of the target 20.
In some embodiments, the power of the ac power source 70 is 100W to 1000W; preferably, the power of the ac power source 70 is 300W.
In some embodiments, the frequency of the AC power source 70 is 220 Hz-2 MHz; preferably, the frequency of the ac power source 70 is 20KHz.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment focuses on differences from other embodiments.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present application should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. The magnetron sputtering deposition device is characterized by comprising a deposition chamber, a target, a magnetron, a wafer base, an annular electrode and an alternating current power supply;
the target is arranged above the inside of the deposition chamber, the wafer pedestal is arranged at the bottom of the deposition chamber and opposite to the target, and the wafer pedestal is used for placing a wafer to be deposited;
the annular electrode is arranged between the target and the wafer base, and the projection surface of the target is positioned in the outline of the projection surface of the annular electrode;
the annular electrode is connected with the alternating current power supply and is used for providing a central symmetrical periodic variation electric field for the deposition chamber after the inert gas is ionized so as to guide inert gas ions to deflect and bombard the target;
wherein the annular electrode is arranged at one side close to the target in the axial direction.
2. The magnetron sputter deposition device according to claim 1, wherein the ring electrode is fixed inside the deposition chamber and insulated from an inner wall of the deposition chamber;
or, the ring electrode is fixed outside the deposition chamber and insulated from the outer wall of the deposition chamber.
3. The magnetron sputter deposition device according to claim 1, wherein a central axis of the ring electrode coincides with a central axis of the target.
4. A magnetron sputter deposition apparatus according to claim 3 wherein the central axis of the ring electrode coincides with the central axis of the wafer pedestal.
5. The magnetron sputtering deposition device according to claim 1, wherein the height of the ring electrode is 2cm to 30cm.
6. The magnetron sputter deposition device according to claim 1, wherein the height of the ring electrode is 10cm.
7. The magnetron sputtering deposition device according to claim 1, wherein holes are also uniformly formed in the ring electrode.
8. The magnetron sputtering deposition device according to claim 1, wherein the ring electrode is provided with N grooves along a circumferential direction to divide the ring electrode into n+1 ring electrode areas, each of the ring electrode areas being connected to the alternating current power supply.
9. The magnetron sputtering deposition device according to claim 1, wherein the power of the alternating current power supply is 100w to 1000w.
10. The magnetron sputter deposition device according to claim 1, wherein the power of the alternating current power supply is 300W.
11. The magnetron sputtering deposition device according to claim 1, wherein the frequency of the alternating current power supply is 220hz to 2mhz.
12. The magnetron sputter deposition device according to claim 1, wherein the frequency of the alternating current power supply is 20KHz.
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