CN115376952B - LED wafer testing and packaging calibration method - Google Patents
LED wafer testing and packaging calibration method Download PDFInfo
- Publication number
- CN115376952B CN115376952B CN202211306410.XA CN202211306410A CN115376952B CN 115376952 B CN115376952 B CN 115376952B CN 202211306410 A CN202211306410 A CN 202211306410A CN 115376952 B CN115376952 B CN 115376952B
- Authority
- CN
- China
- Prior art keywords
- data
- value
- sister
- brightness
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 111
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000012937 correction Methods 0.000 claims abstract description 62
- 238000012795 verification Methods 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 9
- 230000001915 proofreading effect Effects 0.000 claims description 34
- 239000012528 membrane Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 230000001174 ascending effect Effects 0.000 claims description 8
- 238000012858 packaging process Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 238000010835 comparative analysis Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 70
- 230000006872 improvement Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011265 semifinished product Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for testing and packaging a light-emitting diode (LED) wafer and calibrating, which relates to the technical field of semiconductors and comprises the following steps: extracting chips from the first full-band wafer calibration sheet according to the bare value file to test so as to generate first calibration data; extracting sister plate groups of each wave band from the first full-wave band wafer correction plate, and carrying out sorting, packaging and measurement processing to generate two groups of first IS data; calculating standard parameters; constructing a standard file according to the standard parameters; extracting the chips from the second full-waveband wafer correction sheet according to the standard file to test so as to generate second correction data; extracting sister plate groups of each wave band from the second full-wave-band wafer correction plate, and processing to generate a group of second IS data; and respectively comparing the two groups of the first IS data, the second verification data and the second IS data to perform packaging verification. The invention can solve the problems of poor test deviation and poor accuracy of LED chip test semi-light receiving and packaging full light receiving.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for testing and packaging verification of an LED wafer.
Background
An Integrating Sphere (IS) IS a hollow Sphere with a highly reflective inner surface, the inner wall of which IS coated with a white diffuse reflective layer, and the points on the inner wall of the Sphere are uniformly diffused. After the light is incident from the input hole, the light is uniformly reflected and diffused inside the sphere, and uniform light intensity distribution is formed on the spherical surface, so that the light obtained by the output hole is a very uniform diffused light beam; and the incident angle, spatial distribution, and polarity of the incident light will not affect the intensity and uniformity of the output beam.
In the LED semiconductor chip industry, an LED wafer is tested through a testing machine in the manufacturing stage, so that photoelectric data are obtained. Specifically, the method comprises the following steps:
when the wafer is in a semi-finished product manufacturing stage, the LED wafer is tested by the testing machine in a semi-light receiving test mode through an integrating sphere in the point testing machine, but the semi-light receiving test can only receive a spectrum within an angle range of about 110 degrees emitted by an LED crystal grain, and cannot receive all the spectrum;
after the wafer is manufactured into a finished product, the application form of the client is testing after the crystal grains are packaged, and the testing mode of the packaged crystal grains is that the packaged crystal grains stretch into the integrating sphere to carry out totally-closed light receiving testing;
in summary, due to differences in product form and light receiving manner, the semi-light receiving measurement result and the packaged full-light receiving measurement result are inconsistent and have poor accuracy, and the packaged photoelectric data cannot be predicted in advance.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for testing and packaging and calibrating an LED wafer, which can solve the problems of test deviation and poor accuracy of LED chip testing semi-light receiving and packaging full-light receiving.
In order to solve the technical problem, the invention provides a method for testing and packaging a light-emitting diode (LED) wafer, which comprises the following steps: constructing a bare value file according to preset test conditions; extracting a first preset number of chips from a preset first full-waveband wafer correction sheet according to a first preset rule according to the bare value file to test so as to generate first correction data; extracting sister plate groups of each waveband from the first full-waveband wafer correction plate according to the first proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates respectively, and then sorting, packaging and measuring any two groups of sister plates of each waveband respectively to generate two groups of first IS data; comparing and analyzing the first proofreading data and one set of first IS data to calculate standard parameters; constructing a standard file according to the standard parameters; extracting a second preset number of chips from a preset second full-waveband wafer correction sheet according to a second preset rule according to the standard file to test so as to generate second correction data; extracting sister plate groups of each waveband from the second full-waveband wafer correction plate according to the second proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates respectively, and then carrying out sorting, packaging and measurement processing on any group of sister plates of each waveband to generate a group of second IS data; and comparing the two groups of the first IS data, the second verification data and the second IS data respectively to perform packaging verification.
As an improvement of the above solution, the step of extracting sister group sets of each waveband from the first full-waveband wafer correction sheet according to the first calibration data includes: identifying good points in the wafer according to the first calibration data and a preset clamping control range, wherein the first calibration data comprises a brightness value; respectively calculating the brightness mean value of the good points in each band of waves according to the brightness values; respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers; dividing the M multiplied by N good points in each band of waves into N groups of good points according to the ascending/descending order of the brightness values, wherein each group of good points comprises M good points; respectively combining the good points at the same position in each group of good points in each wave band into a group of sister sheets; the step of extracting sister plate groups of each waveband from the second full-waveband wafer correction plate according to the second calibration data comprises the following steps: identifying good points in the wafer according to the second calibration data and a preset card control range, wherein the second calibration data comprises a brightness value; respectively calculating the average brightness value of the good points in each band of waves according to the brightness value; respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers; dividing the M multiplied by N good points in each band of waves into N groups of good points according to the ascending/descending order of the brightness values, wherein each group of good points comprises M good points; and respectively combining the good points at the same position in each group of good points in each wave band into a group of sister sheets.
As an improvement of the above scheme, the step of performing sorting, packaging and measurement processing on any two sister plates of each waveband respectively to generate two sets of first IS data comprises: sorting the two groups of sister tablets on corresponding blue membranes, and marking the sorting direction on the blue membranes; respectively packaging the two groups of sister sheets after sorting; respectively measuring the two groups of packaged sister tablets according to the sorting direction of the marks to generate two groups of first IS data; the step of respectively sorting, packaging and measuring any group of sister sheets of each waveband to generate a group of second IS data comprises the following steps: sorting a group of sister sheets to corresponding blue membranes, and marking sorting directions on the blue membranes; respectively packaging the sorted group of sister sheets; and respectively measuring the packaged group of sister sheets according to the sorting direction of the marks to generate a group of second IS data.
As an improvement of the above scheme, before the two groups of sister tablets after sorting are respectively packaged, the method further comprises: testing the sister plate set according to the nudity file to generate first test-back data; and comparing the first proofreading data with the first testing data to judge whether the sorting is correct or not.
As an improvement of the above solution, the step of comparing the first proofreading data with one of the sets of the first IS data to calculate the standard parameter includes: comparing the first proofreading data with one group of the first IS data, and calculating a brightness ratio, a dominant wavelength difference, a peak wavelength difference and a voltage difference between the first proofreading data and the first IS data corresponding to the same wafer; calculating a large brightness Gain value, a large main wavelength Offset value, a large peak wavelength Offset value and a large voltage Offset value according to the average value of the brightness ratio, the average value of the main wavelength difference values, the average value of the peak wavelength difference values and the average value of the voltage difference values; linearly fitting a small brightness Gain value according to the dominant wavelength in the first IS data, the brightness in the first IS data and the brightness in the first calibration data corrected by the large brightness Gain value; linearly fitting a main wavelength small Offset value according to the main wavelength in the first IS data and the main wavelength in the first correction data corrected by the main wavelength large Offset value; linearly fitting a small Offset value of the peak wavelength according to the main wavelength in the first IS data and the peak wavelength in the first proofreading data corrected by the large Offset value of the peak wavelength; and taking the brightness large Gain value, the main wavelength large Offset value, the peak wavelength large Offset value, the voltage large Offset value, the brightness small Gain value, the main wavelength small Offset value and the peak wavelength small Offset value as standard parameters.
As an improvement of the foregoing solution, the step of linearly fitting the small luminance Gain value according to the dominant wavelength in the first IS data, the luminance in the first IS data, and the luminance in the first calibration data corrected by the large luminance Gain value includes: constructing a two-dimensional coordinate system; constructing a reference point by taking the dominant wavelength in the first IS data as an X-axis coordinate and taking the ratio of the brightness in the first IS data to the brightness in the first proofreading data corrected by the brightness large Gain value as a Y-axis coordinate; constructing a scatter point with a Y-axis correction coefficient of 1; constructing a trend line according to the datum points; adjusting the position of the scatter point according to the trend line so that the scatter point is positioned on the trend line; and taking the numerical value of the post-scattering point of the adjusted position as the small Gain value of the brightness.
As an improvement of the foregoing solution, the step of linearly fitting a main wavelength small Offset value according to the main wavelength in the first IS data and the main wavelength in the first calibration data corrected by the main wavelength large Offset value includes: constructing a two-dimensional coordinate system; taking the dominant wavelength in the first IS data as an X-axis coordinate, and taking the difference value between the dominant wavelength in the first IS data and the dominant wavelength in the first calibration data corrected by the dominant wavelength Offset value as a Y-axis coordinate to construct a reference point; constructing scatter points with a Y-axis correction coefficient of 0; adjusting the positions of the scattered points according to the reference points so as to enable the scattered points to be consistent with the distribution trend of the reference points; taking the numerical value of the backscattering point of the adjusting position as a main wavelength small Offset value; the step of linearly fitting a peak wavelength small Offset value according to a main wavelength in the first IS data and a peak wavelength in first calibration data corrected by a peak wavelength large Offset value includes: constructing a two-dimensional coordinate system; constructing a reference point by taking the main wavelength in the first IS data as an X-axis coordinate and taking the difference value between the peak wavelength in the first IS data and the peak wavelength in the first calibration data corrected by the peak wavelength large Offset value as a Y-axis coordinate; constructing a scatter point with a Y-axis correction coefficient of 0; adjusting the positions of the scattered points according to the reference points so as to enable the scattered points to be consistent with the distribution trend of the reference points; and taking the numerical value of the post-scattered point of the adjusting position as a small Offset value of the peak wavelength.
As an improvement of the above scheme, the step of comparing the two sets of the first IS data, the second verification data and the second IS data respectively to perform the encapsulation verification includes: comparing the two groups of the first IS data to determine whether a difference exists between the packaging process and the IS measurement process; and comparing the second calibration data with the second IS data to determine whether the calibration IS correct.
As an improvement of the above solution, before building a standard archive according to the standard parameters, the method further comprises: extracting a preset standard number of chips from preset wafer standard chips according to the bare value file and a preset standard interval to test so as to generate first bare value test data; testing the chips extracted from the wafer standard wafer again according to the bare value file to generate second bare value test data; comparing the first bare value test data with the second bare value test data to calculate a correction value; and correcting the bare value file according to the correction value.
As an improvement of the above solution, after the standard archive is built according to the standard parameters, the method further includes: extracting a preset standard number of chips from a preset wafer standard sheet according to the standard file and a preset standard interval to test so as to generate first standard test data; testing the chips extracted from the wafer standard wafer again according to the standard file to generate second standard test data; comparing the first standard test data with the second standard test data to calculate a correction value; and correcting the standard file according to the correction value.
The invention monitors and eliminates the fluctuation difference of the IS sealing and measuring end by a sister machine, realizes the brightness and wavelength correction of the full wave band by a linear fitting technology, and realizes perfect and precise wafer testing and packaging alignment and calibration processes.
Therefore, by implementing the invention, the test data of the LED wafer can accurately mark the true value after being packaged, and the photoelectric data after being packaged can be predicted in advance in the stage of manufacturing the semi-finished product of the LED chip, so that the problems of test deviation and poor accuracy of the LED chip test semi-receiving light and the LED chip package full-receiving light can be solved; the method provides a timely and accurate monitoring data basis for the manufacture of the LED chip, and can adjust the process change in time; meanwhile, more accurate semi-finished product test data is beneficial to accurate sample selection when a client application end selects different applications, and the failure rate of the packaging yield is reduced.
Drawings
FIG. 1 is a flowchart illustrating a method for testing and packaging an LED wafer according to a first embodiment of the present invention;
FIG. 2 is a schematic representation of the invention before fitting small Gain values;
FIG. 3 is a schematic diagram of the invention after fitting of small Gain values;
FIG. 4 is a schematic diagram of the invention before fitting of small Offset values;
FIG. 5 is a diagram of the invention after fitting of small Offset values;
FIG. 6 IS a comparison of two sets of first IS data according to the present invention;
FIG. 7 IS a LOP comparison of second calibration data and second IS data in the present invention;
FIG. 8 IS a schematic diagram of a WD comparison of second calibration data and second IS data in the present invention;
FIG. 9 IS a schematic diagram of the comparison of WP of the second calibration data with the second IS data in the present invention;
FIG. 10 is a flowchart illustrating a second embodiment of a method for testing and packaging a LED wafer according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 shows a flowchart of a first embodiment of a method for testing and package verification of an LED wafer according to the present invention, which includes:
s101, constructing a bare value file according to preset test conditions;
it should be noted that after a new product arrives at the point testing site, the testing conditions need to be confirmed according to the performance requirements of the client application end; as shown in table 1 below, the test conditions include test item information, current information, voltage information, and other relevant information;
TABLE 1
Accordingly, according to the preset test conditions, a bare value file can be established on the standard machine, and large Gain (i.e. Gain), small Gain, large Offset (i.e. Offset) and small Offset are cleared, wherein table 2 is the representation after the small Gain and the small Offset are cleared, and table 3 is the representation after the large Gain and the large Offset are cleared:
TABLE 2
TABLE 3
S102, extracting a first preset number of chips from a preset first full-wave-band wafer correcting sheet according to a first preset rule according to the bare value file to test so as to generate first correcting data;
before step S102, a full-band wafer is selected as a first full-band wafer calibration sheet; where full band means that substantially all bands of the product are covered, about 20 nm, e.g. the blue band about 445-460, green 515-535.
For example, 5000 chips of the selected first full-band wafer calibration sheet can be tested at equal intervals by using the established bare value file to generate first calibration data; the first proofreading data includes 5000 sets of first proofreading data corresponding to 5000 wafers one to one.
S103, extracting sister plate groups of each waveband from a first full-waveband wafer correction plate according to the first proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates, and then respectively sorting, packaging and measuring any two groups of sister plates of each waveband to generate two groups of first IS data;
specifically, the step of extracting the sister group of each waveband from the first full-waveband wafer correction sheet according to the first calibration data comprises the following steps:
(1) Identifying good points in the wafer according to the first proofreading data and a preset clamping control range;
when a sister plate group is required to be extracted from the chips extracted from the first full-waveband wafer correction plate, dead spots can be removed according to a preset card control range; for example, a dead pixel of IR1 (Reverse current Working Peak Reverse Voltage) <1, VF1 (Forward Voltage Drop) <1.9, or VZ1 (regulated range Voltage increment) >10 is removed.
As shown in table 4, the file format read by the sorting machine can be changed for the file of the testing machine, the BIN column number of the bad pixel is set to 151, and the BIN column number of the good pixel is set to 100, so that the effective distinguishing of the good pixel and the bad pixel is realized:
TABLE 4
As shown in table 4, points 8 and 9 are good points, and points 10 and 11 are bad points.
(2) Respectively calculating the brightness mean value of the good points in each band of waves according to the brightness value;
it should be noted that the first calibration data includes a luminance value;
specifically, we can first round the WD (dominant wavelength) and screen the wafers with a BIN column value of 100 (i.e., good spots) to make a perspective table, as shown in Table 5:
TABLE 5
As can be seen from table 5, the mean luminance value in the 450 wavelength band is 76.83, which includes 400 dots.
Then, the mean brightness value of good spots corresponding to each 1nm dominant wavelength was calculated, and the wafer data were arranged in ascending or descending order of brightness values, as shown in table 6:
TABLE 6
(3) Respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers;
(4) Dividing the M multiplied by N good points in each band of waves into N groups of good points according to ascending or descending order of the brightness values, wherein each group of good points comprises M good points;
(5) And respectively combining the good points at the same position in each good point group in each wave band into a group of sister sheets.
For example, when M =3,n =10, 30 good points whose luminance values are closest to the corresponding luminance mean value in each band of waves are extracted, and then the 30 good points in each band of waves are divided into 10 sets of good points according to the ascending order or the descending order of the luminance values, where each set of good points includes 3 good points.
In practical application, good points can be selected from table 6, and the BIN column numbers corresponding to the good points are sequentially modified to "1, 2, 3, 1, 2, 3 \8230 \" or "3, 2, 1, 3, 2, 1 \8230 \ 8230;, \8230;" and then the first group of sister sheets with the BIN column number of "1" are combined, the second group of sister sheets with the BIN column number of "2" are combined, and the third group of sister sheets with the BIN column number of "3" are combined, so as to realize the distinguishing marks of the sister sheets, which is specifically shown in table 7:
TABLE 7
From tables 4 to 7, it can be seen that the mean luminance value of 450 wavelength bands is 76.83 (see table 5), and that 400 wafers are obtained, and 30 wafers are sequentially taken from the top and bottom of the luminance of 76.83, and the BIN column numbers are sequentially modified to "3, 2, 1, 3, 2, 1 \8230;", 8230; ". Accordingly, the chips with the BIN column value of "1", the BIN column value of "2" and the BIN column value of "3" in the same band have the same main wavelength and the same brightness, and are called sister group.
In addition, the step of respectively sorting, packaging and measuring any two groups of sister tablets of each waveband to generate two groups of first IS data comprises the following steps:
(1) Sorting the two groups of sister tablets to corresponding blue membranes, and marking sorting directions on the blue membranes;
two groups of sister tablets can be respectively sorted to two corresponding blue films by a sorting machine, and the sorting direction is marked on the blue films.
(2) Respectively packaging the two groups of sister sheets after sorting;
(3) And respectively measuring the two groups of packaged sister tablets according to the sorting direction of the marks to generate two groups of first IS data.
And submitting an IS measurement request form, sending the two groups of sister sheets to a laboratory, and measuring according to the marked sequence after the laboratory encapsulates the sample to generate two groups of first IS data.
Further, before the two groups of sister tablets after being sorted are respectively packaged, the method further comprises the following steps: testing the sister plate set according to the nudity file to generate first test-back data; and comparing the first calibration data with the first test data to judge whether the sorting is correct or not.
It should be noted that, the first calibration data is compared with the first test data to determine whether the dominant wavelengths are consistent, and if so, it indicates that the sorting process is correct.
S104, comparing and analyzing the first proofreading data and one group of the first IS data to calculate standard parameters;
it should be noted that the first calibration data includes various information such as reverse current, forward voltage drop, voltage increment, brightness value, BIN column value, and the like (see table 4), the first IS data includes various information such as dominant wavelength, peak wavelength, brightness, voltage, and the like, and part of the information IS shown in table 8 below:
TABLE 8
Different from the prior art, the invention respectively extracts the main wavelength, peak wavelength, brightness, voltage and other information in the first proofreading data and one group of first IS data for comparison and analysis, and specifically:
(1) Comparing the first calibration data with one group of first IS data, and calculating a brightness ratio, a dominant wavelength difference, a peak wavelength difference and a voltage difference between the first calibration data and the first IS data corresponding to the same wafer;
since the first IS data IS measured according to the marked sequence, the first calibration data and the first IS data can be compared point to point, and the specific comparison result IS shown in table 9:
TABLE 9
As shown in table 9, the comparison manner of the luminance PB _ IV of the first calibration data and the luminance IS _ IV of the first IS data IS "ratio", the comparison manner of the voltage PB _ VF4 of the first calibration data and the voltage IS _ VF4 of the first IS data IS "difference", the comparison manner of the main wavelength PB _ WD of the first calibration data and the main wavelength IS _ WD of the first IS data IS "difference", and the comparison manner of the peak wavelength PB _ WP of the first calibration data and the peak wavelength IS _ WP of the first IS data IS "difference".
(2) Calculating a large brightness Gain value, a large main wavelength Offset value, a large peak wavelength Offset value and a large voltage Offset value according to the average value of the brightness ratio, the average value of the main wavelength difference values, the average value of the peak wavelength difference values and the average value of the voltage difference values;
from the values in table 9, the available luminance large Gain, dominant wavelength large Offset, peak wavelength large Offset, and voltage large Offset values are shown in table 10 below:
TABLE 10
That is, the large brightness Gain value of the full band is the average value of the corresponding brightness ratios in the full band, the large dominant wavelength Offset value of the full band is the average value of the corresponding main wavelength differences in the full band, the large peak wavelength Offset value of the full band is the average value of the corresponding peak wavelength differences in the full band, and the large voltage Offset value of the full band is the average value of the corresponding voltage differences in the full band.
After the correction of the large luminance Gain value, the large main wavelength Offset value, and the large peak wavelength Offset value is completed, the following steps (3) to (5) may be performed to correct the small luminance Gain value, the small main wavelength Offset value, and the small peak wavelength Offset value.
(3) Linearly fitting a small brightness Gain value according to the dominant wavelength in the first IS data, the brightness in the first IS data and the brightness in the first calibration data corrected by the large brightness Gain value;
with reference to fig. 2 and 3, the specific steps include:
(a1) Constructing a two-dimensional coordinate system;
(a2) Constructing a reference point (see a square point in fig. 2) by taking the dominant wavelength in the first IS data as an X-axis coordinate and taking a ratio between the brightness in the first IS data and the brightness in the first calibration data corrected by the large brightness Gain value as a Y-axis coordinate;
(a3) Constructing a scatter point with a Y-axis correction coefficient of 1 (see the dots in FIG. 2);
(a4) Constructing a trend line (see the curve in fig. 2) from the reference points;
(a5) Adjusting the position of the scatter point according to the trend line so that the scatter point is on the trend line (see fig. 3);
(a6) And taking the numerical value of the post-scattering point of the adjusting position as a brightness small Gain value.
After adjustment, the scattering point is basically overlapped with the trend line, and at the moment, the value corresponding to the scattering point position is the brightness small Gain value needing to be corrected. It should be noted that when the brightness is corrected to be small and the Gain value is corrected, the adjacent bands do not need to jump too much, and if the difference between the adjacent bands is large, it is necessary to determine whether the test data is abnormal.
It should be noted that the luminance is regularly distributed along with the dominant wavelength, and therefore, the luminance can be corrected by adjusting the dominant wavelength.
(4) Linearly fitting a main wavelength small Offset value according to the main wavelength in the first IS data and the main wavelength in the first proofreading data corrected by the main wavelength large Offset value;
as shown in fig. 4 and 5, the specific steps include:
(b1) Constructing a two-dimensional coordinate system;
(b2) Constructing a reference point (see a square point in fig. 4) by using a dominant wavelength in the first IS data as an X-axis coordinate and using a difference value between the dominant wavelength in the first IS data and the dominant wavelength in the first calibration data corrected by the dominant wavelength Offset value as a Y-axis coordinate;
(b3) Constructing a scatter point with a Y-axis correction coefficient of 0 (see the dots in FIG. 4);
(b4) Adjusting the positions of the scattered points according to the reference points so as to make the distribution trends of the scattered points and the reference points consistent;
(b5) And taking the numerical value of the backscattering point of the adjusted position as the main wavelength small Offset value.
It should be noted that when the correction wavelength is smaller than the Offset value, the adjacent band does not need to jump too much; if the difference between adjacent bands is large, it is necessary to determine whether the test data is abnormal.
(5) Linearly fitting a peak wavelength small Offset value according to the main wavelength in the first IS data and the peak wavelength in the first proofreading data corrected by the peak wavelength large Offset value;
the method comprises the following specific steps:
(c1) Constructing a two-dimensional coordinate system;
(c2) Constructing a reference point by taking the main wavelength in the first IS data as an X-axis coordinate and taking the difference value between the peak wavelength in the first IS data and the peak wavelength in the first calibration data corrected by the peak wavelength large Offset value as a Y-axis coordinate;
(c3) Constructing scatter points with a Y-axis correction coefficient of 0;
(c4) Adjusting the positions of the scattered points according to the reference points so as to enable the distribution trends of the scattered points to be consistent with the distribution trends of the reference points;
(c5) And taking the numerical value of the post-dispersion point of the adjusted position as a peak wavelength small Offset value.
(6) The main wavelength large Offset value, the peak wavelength large Offset value, the voltage large Offset value, the luminance small Gain value, the main wavelength small Offset value, and the peak wavelength small Offset value are used as standard parameters.
After the above steps (3) to (5), the luminance small Gain value, the main wavelength small Offset value, and the peak wavelength small Offset value corrected in different bands are shown in table 11:
TABLE 11
S105, constructing a standard file according to the standard parameters;
after calculating the standard parameters (the luminance large Gain value, the main wavelength large Offset value, the peak wavelength large Offset value, the voltage large Offset value, the luminance small Gain value, the main wavelength small Offset value, and the peak wavelength small Offset value), it needs to be filled into the standard machine to establish a standard file, and the standard file after filling the standard parameters is as shown in the following tables 12 and 13:
TABLE 12
Watch 13
S106, extracting a second preset number of chips from a preset second full-wave-band wafer correction sheet according to a second preset rule according to the standard file to test so as to generate second correction data;
before step S106, a full-band wafer is selected as a second full-band wafer calibration sheet.
S107, extracting sister plate groups of each waveband from a second full-waveband wafer correction plate according to second proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates, and performing sorting, packaging and measurement processing on any group of sister plates of each waveband to generate a group of second IS data;
specifically, the step of extracting the sister plate group of each waveband from the second full-waveband wafer correction plate according to the second calibration data comprises the following steps:
(1) Identifying good points in the wafer according to the second proofreading data and a preset clamping control range, wherein the first proofreading data comprises a brightness value;
(2) Respectively calculating the brightness mean value of the good points in each band of waves according to the brightness value;
(3) Respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers;
(4) Dividing the M multiplied by N good points in each band of waves into N groups of good points according to the ascending order or the descending order of the brightness values, wherein each group of good points comprises M good points;
(5) And respectively combining the good points at the same position in each good point group in each wave band into a group of sister sheets.
In addition, the step of sorting, packaging and measuring any group of sister sheets of each waveband respectively to generate a group of second IS data comprises the following steps:
(1) Sorting a group of sister sheets to corresponding blue membranes, and marking sorting directions on the blue membranes;
(2) Respectively packaging the sorted group of sister sheets;
(3) And respectively measuring the packaged group of sister sheets according to the sorting direction of the marks to generate a group of second IS data.
Step S107 is similar to step S103, and the description will not be repeated here.
And S108, comparing the two groups of the first IS data, the second verification data and the second IS data respectively to perform packaging verification.
The specific packaging calibration steps include:
(1) Comparing the two groups of first IS data to determine whether the packaging process and the IS measurement process are different;
it should be noted that the two sets of first IS data are sister plate sets from the first full-waveband wafer calibration plate, and therefore, theoretically, the two sets of first IS data should be the same, and if the two sets of first IS data are different, the difference IS a packaging link and IS measurement difference, such as a packaging support, a person, an integrating sphere difference, and the like. Therefore, the purpose of the two sets of first IS data comparisons IS to remove this partial IS difference, and the process IS called Check IS.
As shown in fig. 6, the dots are the first set of the first IS data, the squares are the second set of the first IS data, and the difference between the two sets of the first IS data every day IS 0.07%, which IS negligible, as shown in table 14.
TABLE 14
(2) And comparing the second calibration data with the second IS data to determine whether the calibration IS correct.
The second calibration data and the second IS data are both from the second full-waveband wafer calibration sheet, and when the second calibration data and the second IS data are not different, the second calibration data and the second IS data show that the second calibration data are relatively flat along with the main wavelength and do not incline.
As shown in fig. 7 to 9 and table 15, the correction was passed.
Watch 15
In conclusion, the invention monitors and eliminates the fluctuation difference of the IS seal measuring end by the sister plate manufacturing, realizes the brightness main wavelength correction of the full wave band by the linear fitting technology, and realizes the perfect and rigorous wafer test and packaging alignment and calibration process; the real value of the packaged LED wafer test data can be accurately calibrated, the packaged photoelectric data can be predicted in advance in the stage of manufacturing a semi-finished product of an LED chip, and the problems of test deviation and poor accuracy of LED chip test semi-received light and packaged full-received light can be solved; the method provides a timely and accurate monitoring data basis for the manufacture of the LED chip, and can adjust the process change in time; meanwhile, more accurate semi-finished product test data are obtained, accurate sample selection is facilitated when a client application end selects different applications, and the reject ratio of the packaging yield is reduced.
Referring to fig. 10, fig. 10 shows a flowchart of a second embodiment of the LED wafer test and package verification method of the present invention, which includes:
s201, constructing a bare value file according to preset test conditions;
s202, extracting a preset standard number of chips from a preset wafer standard chip according to a preset standard interval according to a bare value file to test so as to generate first bare value test data;
specifically, the selected wafer standard wafer is tested at 1000 pieces (different sizes and different set testing intervals, for example, the total number of 1128 type whole wafers is about 45800) according to a length-width ratio by using the established bare value file, the testing interval can be set to be 5X9, namely the testing interval in the X coordinate direction is 5 pieces, the testing interval in the Y coordinate direction is 9 pieces, and the purpose of testing 1000 whole wafers by using the whole wafer is achieved), and the first bare value test data of the 1000 pieces of wafers is stored in a fixed position of a network disk and used for recording the level of the current standard machine;
s203, extracting a first preset number of chips from a preset first full-wave-band wafer correcting sheet according to a first preset rule according to the bare value file to test so as to generate first correcting data;
s204, extracting sister plate groups of each waveband from a first full-waveband wafer correction plate according to the first proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates respectively, and then carrying out sorting, packaging and measurement processing on any two groups of sister plates of each waveband respectively to generate two groups of first IS data;
s205, comparing and analyzing the first proofreading data and one group of the first IS data to calculate standard parameters;
s206, testing the chips extracted from the wafer standard wafer again according to the bare value file to generate second bare value test data;
s207, comparing the first bare value test data with the second bare value test data to calculate a correction value;
and S208, correcting the bare value file according to the correction value.
S209, constructing a standard file according to the standard parameters;
s210, extracting a preset standard number of chips from a preset wafer standard sheet according to a standard file and a preset standard interval to test so as to generate first standard test data;
s211, testing the chips extracted from the wafer standard wafer again according to the standard file to generate second standard test data;
s212, comparing the first standard test data with the second standard test data to calculate a correction value;
s213, correcting the standard file according to the correction value;
s214, extracting a second preset number of chips from a preset second full-wave-band wafer correction sheet according to a second preset rule according to the standard file to test so as to generate second correction data;
s215, extracting sister plate groups of each waveband from a second full-waveband wafer correction plate according to second proofreading data, dividing the sister plate groups of each waveband into at least two groups of sister plates respectively, and then carrying out sorting, packaging and measurement processing on any group of sister plates of each waveband to generate a group of second IS data;
and S216, comparing the two groups of the first IS data, the second verification data and the second IS data respectively to perform packaging verification.
Unlike the first embodiment shown in fig. 1, this embodiment adds step S202 and steps S206 to 208 before step S209. That is, before the standard file is constructed, the standard wafer is tested once in the standard machine at the same point as the previous recorded level, and compared with the first bare value test data measured before, this step is called machine verification, if there is a difference that needs to be corrected, the standard file is filled with the correction value, and then the size Gain/Offset is filled on the basis of the correction value.
Since the tester belongs to the measurement equipment, it is affected by a series of factors such as ambient temperature, humidity and probe condition, and there will be some deviation in different time levels. Therefore, the level can be corrected to be consistent with that of the bare value test by the machine check, and the variable is controlled.
Similarly, by adding steps S210 to S213, the standard file can be corrected, and the reliability can be improved.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A method for testing and packaging calibration of an LED wafer is characterized by comprising the following steps:
constructing a bare value file according to preset test conditions;
extracting a first preset number of chips from a preset first full-waveband wafer correction sheet according to a first preset rule according to the bare value file to test so as to generate first correction data;
extracting sister plate groups of each waveband from the first full-waveband wafer correction plate according to the first correction data, dividing the sister plate groups of each waveband into at least two groups of sister plates, and sorting, packaging and measuring any two groups of sister plates of each waveband to generate two groups of first IS data; the step of extracting the sister plate group of each waveband from the first full-waveband wafer correction plate according to the first calibration data comprises the following steps: identifying good points in the wafer according to the first proofreading data and a preset clamping control range, wherein the first proofreading data comprises a brightness value; respectively calculating the brightness mean value of the good points in each band of waves according to the brightness values; respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers; dividing the M multiplied by N good points in each band of waves into N groups of good points according to the ascending/descending order of the brightness values, wherein each group of good points comprises M good points; respectively combining the good points at the same position in each group of good points in each wave band into a group of sister sheets;
comparing and analyzing the first proofreading data and one set of first IS data to calculate standard parameters;
constructing a standard file according to the standard parameters;
extracting a second preset number of chips from a preset second full-waveband wafer correction sheet according to a second preset rule according to the standard file to test so as to generate second correction data;
extracting sister plate groups of each waveband from the second full-waveband wafer correction plate according to the second calibration data, dividing the sister plate groups of each waveband into at least two groups of sister plates, and performing sorting, packaging and measurement processing on any group of sister plates of each waveband to generate a group of second IS data; the step of extracting sister plate groups of each waveband from the second full-waveband wafer correction plate according to the second calibration data comprises the following steps: identifying good points in the wafer according to the second calibration data and a preset clamping control range, wherein the second calibration data comprises brightness values; respectively calculating the average brightness value of the good points in each band of waves according to the brightness value; respectively extracting M multiplied by N good points with the brightness values closest to the corresponding brightness mean values in each band of waves, wherein N is more than or equal to 2, and M and N are positive integers; dividing the M multiplied by N good points in each band of waves into N groups of good points according to the ascending/descending order of the brightness values, wherein each group of good points comprises M good points; respectively combining the good points at the same position in each group of good points in each wave band into a group of sister sheets;
and comparing the two groups of first IS data, and comparing the second verification data with the second IS data to perform packaging verification.
2. The LED wafer test and package proofreading method of claim 1,
the step of respectively sorting, packaging and measuring any two groups of sister tablets of each waveband to generate two groups of first IS data comprises the following steps: sorting the two groups of sister tablets to corresponding blue membranes, and marking sorting directions on the blue membranes; respectively packaging the two groups of sister tablets after sorting; respectively measuring the two groups of packaged sister tablets according to the sorting direction of the marks to generate two groups of first IS data;
the step of respectively carrying out sorting, packaging and measurement processing on any group of sister tablets of each waveband to generate a group of second IS data comprises the following steps: sorting a group of sister sheets to corresponding blue membranes, and marking sorting directions on the blue membranes; respectively packaging the sorted group of sister sheets; and respectively measuring the packaged group of sister sheets according to the sorting direction of the marks to generate a group of second IS data.
3. The method as claimed in claim 2, wherein before the two sorted sister chips are packaged, the method further comprises:
testing the sister plate set according to the nudity file to generate first test-back data;
and comparing the first proofreading data with the first testing data to judge whether the sorting is correct or not.
4. The LED wafer test and package proofreading method of claim 1, wherein the step of performing a comparative analysis of the first proofreading data and one of the sets of first IS data to calculate the standard parameters comprises:
comparing the first calibration data with one group of first IS data, and calculating a brightness ratio, a dominant wavelength difference, a peak wavelength difference and a voltage difference between the first calibration data and the first IS data corresponding to the same wafer;
calculating a large brightness Gain value, a large main wavelength Offset value, a large peak wavelength Offset value and a large voltage Offset value according to the average value of the brightness ratio, the average value of the main wavelength difference values, the average value of the peak wavelength difference values and the average value of the voltage difference values;
linearly fitting a small brightness Gain value according to the dominant wavelength in the first IS data, the brightness in the first IS data and the brightness in the first calibration data corrected by the large brightness Gain value;
linearly fitting a main wavelength small Offset value according to the main wavelength in the first IS data and the main wavelength in the first correction data corrected by the main wavelength large Offset value;
linearly fitting a peak wavelength small Offset value according to the main wavelength in the first IS data and the peak wavelength in the first proofreading data corrected by the peak wavelength large Offset value;
and taking the brightness large Gain value, the main wavelength large Offset value, the peak wavelength large Offset value, the voltage large Offset value, the brightness small Gain value, the main wavelength small Offset value and the peak wavelength small Offset value as standard parameters.
5. The method as claimed in claim 4, wherein the step of linearly fitting the small-luminance Gain value according to the dominant wavelength in the first IS data, the luminance in the first IS data, and the luminance in the first calibration data corrected by the large-luminance Gain value comprises:
constructing a two-dimensional coordinate system;
constructing a reference point by taking the dominant wavelength in the first IS data as an X-axis coordinate and taking the ratio of the brightness in the first IS data to the brightness in the first proofreading data corrected by the large brightness value as a Y-axis coordinate;
constructing a scatter point with a Y-axis correction coefficient of 1;
constructing a trend line according to the datum points;
adjusting the position of the scatter point according to the trend line so that the scatter point is positioned on the trend line;
and taking the numerical value of the post-scattering point of the adjusted position as the small Gain value of the brightness.
6. The LED wafer test and package proofreading method of claim 4,
the step of linearly fitting the main wavelength small Offset value according to the main wavelength in the first IS data and the main wavelength in the first calibration data corrected by the main wavelength large Offset value includes: constructing a two-dimensional coordinate system; taking the dominant wavelength in the first IS data as an X-axis coordinate, and taking the difference value between the dominant wavelength in the first IS data and the dominant wavelength in the first calibration data corrected by the dominant wavelength Offset value as a Y-axis coordinate to construct a reference point; constructing a scatter point with a Y-axis correction coefficient of 0; adjusting the positions of the scattered points according to the reference points so as to enable the distribution trends of the scattered points and the reference points to be consistent; taking the numerical value of the post-scattered point of the adjustment position as a main wavelength small Offset value;
the step of linearly fitting the small peak wavelength Offset value according to the main wavelength in the first IS data and the peak wavelength in the first calibration data corrected by the large peak wavelength Offset value includes: constructing a two-dimensional coordinate system; constructing a reference point by taking the main wavelength in the first IS data as an X-axis coordinate and taking the difference value between the peak wavelength in the first IS data and the peak wavelength in the first calibration data corrected by the peak wavelength large Offset value as a Y-axis coordinate; constructing a scatter point with a Y-axis correction coefficient of 0; adjusting the positions of the scattered points according to the reference points so as to enable the scattered points to be consistent with the distribution trend of the reference points; and taking the numerical value of the post-dispersion point of the adjusted position as a peak wavelength small Offset value.
7. The method of claim 1, wherein the step of comparing the two sets of the first IS data and the second IS data to perform package verification comprises:
comparing the two groups of first IS data to determine whether the packaging process and the IS measurement process are different;
and comparing the second calibration data with the second IS data to determine whether the calibration IS correct.
8. The method for LED wafer test and package proofing according to claim 1, further comprising, before building a standard file according to the standard parameters:
extracting a preset standard number of chips from a preset wafer standard chip according to the bare value file and a preset standard interval to test so as to generate first bare value test data;
testing the chips extracted from the wafer standard wafer again according to the bare value file to generate second bare value test data;
comparing the first bare value test data with the second bare value test data to calculate a correction value;
and correcting the bare value file according to the correction value.
9. The LED wafer test and package proofreading method of claim 1, further comprising, after building a standard file according to the standard parameters:
extracting a preset standard number of chips from a preset wafer standard sheet according to the standard file and a preset standard interval to test so as to generate first standard test data;
testing the chips extracted from the wafer standard wafer again according to the standard file to generate second standard test data;
comparing the first standard test data with the second standard test data to calculate a correction value;
and correcting the standard file according to the correction value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211306410.XA CN115376952B (en) | 2022-10-25 | 2022-10-25 | LED wafer testing and packaging calibration method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211306410.XA CN115376952B (en) | 2022-10-25 | 2022-10-25 | LED wafer testing and packaging calibration method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115376952A CN115376952A (en) | 2022-11-22 |
| CN115376952B true CN115376952B (en) | 2023-01-31 |
Family
ID=84073274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211306410.XA Active CN115376952B (en) | 2022-10-25 | 2022-10-25 | LED wafer testing and packaging calibration method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115376952B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1066730A (en) * | 1992-06-02 | 1992-12-02 | 浙江大学 | A kind of semiconductor diffusion length gauge |
| CN102000657A (en) * | 2009-08-28 | 2011-04-06 | 三星Led株式会社 | Resin application apparatus, optical property correction apparatus and method |
| CN104849683A (en) * | 2015-04-14 | 2015-08-19 | 山西南烨立碁光电有限公司 | Calibration method for LED chip measuring device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011103752A1 (en) * | 2011-05-31 | 2012-12-06 | Osram Opto Semiconductors Gmbh | Method for arranging a plurality of LEDs in packaging units and packaging unit with a plurality of LEDs |
| CN102214741B (en) * | 2011-06-01 | 2012-12-05 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| KR101365995B1 (en) * | 2012-08-31 | 2014-02-25 | 한국광기술원 | Apparatus and method for measuring absorption of led chip |
| RU2521119C1 (en) * | 2012-12-26 | 2014-06-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" | Method of inspecting quality of led structure |
| CN103681988B (en) * | 2013-12-05 | 2016-09-07 | 西安神光皓瑞光电科技有限公司 | A kind of LED standard square sheet and preparation method thereof |
| CN105388439A (en) * | 2015-11-03 | 2016-03-09 | 山东浪潮华光光电子股份有限公司 | Multiband calibration method for LED chip test |
| JP7226230B2 (en) * | 2019-09-27 | 2023-02-21 | 豊田合成株式会社 | Thermal resistance prediction method and property inspection machine |
| CN112735969B (en) * | 2021-04-02 | 2021-08-06 | 高视科技(苏州)有限公司 | LED semiconductor packaging glue dispensing defect detection method, electronic equipment and storage medium |
-
2022
- 2022-10-25 CN CN202211306410.XA patent/CN115376952B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1066730A (en) * | 1992-06-02 | 1992-12-02 | 浙江大学 | A kind of semiconductor diffusion length gauge |
| CN102000657A (en) * | 2009-08-28 | 2011-04-06 | 三星Led株式会社 | Resin application apparatus, optical property correction apparatus and method |
| CN104849683A (en) * | 2015-04-14 | 2015-08-19 | 山西南烨立碁光电有限公司 | Calibration method for LED chip measuring device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115376952A (en) | 2022-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20190033233A1 (en) | System and method for inspecting a wafer | |
| US9863889B2 (en) | System and method for inspecting a wafer | |
| US8885918B2 (en) | System and method for inspecting a wafer | |
| US20120013899A1 (en) | System and Method for Capturing Illumination Reflected in Multiple Directions | |
| CN100394421C (en) | System and method of analyse product good rate | |
| CN108122801B (en) | Wafer marking method and wafer marking system | |
| WO2015045222A1 (en) | Inspection system, inspection method, and readable recording medium | |
| US9671280B2 (en) | LED testing process and correction methods therefor | |
| CN110837717A (en) | Map-based glass panel multi-defect root cause analysis method | |
| CN115376952B (en) | LED wafer testing and packaging calibration method | |
| CN104103543B (en) | Wafer defect dimension correction method | |
| CN113175883B (en) | Light source normalization processing method of spectrum confocal measurement system | |
| US9048172B2 (en) | Method of manufacturing white light emitting device (LED) and apparatus measuring phosphor film | |
| US11640117B2 (en) | Selection of regions of interest for measurement of misregistration and amelioration thereof | |
| TW583406B (en) | Method for analyzing final test parameters | |
| CN103383347A (en) | Absolute measuring method and apparatus of non-linear error | |
| US11551980B2 (en) | Dynamic amelioration of misregistration measurement | |
| WO2022246842A1 (en) | Matching method and device for manufacturing liquid crystal display device, and system and medium | |
| CN105095632A (en) | Photochromic parameter statistical method and apparatus | |
| CN117374172A (en) | Crystal grain testing method and system | |
| US20030219916A1 (en) | Abnormal photoresist line/space profile detection through signal processing of metrology waveform | |
| CN114527362A (en) | Brightness calibration method for AlGaInP quaternary LED chip production machine | |
| KR100539222B1 (en) | Method for the better alignment in expose mechanism | |
| JP2013068633A (en) | Automated wafer defect inspection system and method for executing inspection | |
| CN113522789A (en) | Method for determining key parameters for sorting battery pieces |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |