CN105388439A - Multiband calibration method for LED chip test - Google Patents
Multiband calibration method for LED chip test Download PDFInfo
- Publication number
- CN105388439A CN105388439A CN201510738342.8A CN201510738342A CN105388439A CN 105388439 A CN105388439 A CN 105388439A CN 201510738342 A CN201510738342 A CN 201510738342A CN 105388439 A CN105388439 A CN 105388439A
- Authority
- CN
- China
- Prior art keywords
- center line
- difference value
- standard
- waveband
- wave band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a multiband calibration method for LED chip test. The method comprises the following steps: a standard sample is made; a standard machine is used for testing the standard sample to obtain a wavelength of each band of the standard sample; the standard machine is used for determining the starting point and the point measurement direction of the standard sample; a production stock is used for testing the standard sample to obtain the wavelength of each band of the standard sample; data comparison is carried out, and comparison with point to point corresponding to the bands is adopted; wavelengths of the standard sample tested by the standard machine and differences are made into a scatter diagram; each band is corrected according to the scatter diagram; and according to the correction method, bands of the production stock and the standard machine are calibrated to be consistent. After the device is calibrated by using the calibration method of the invention, test accuracy and consistency are improved, and errors of measurement values along with a crystal grain size, a crystal grain gap and environmental changes are small. When the measurement device calibrated by adopting the method of the invention is used for testing the LED chip, the test data are accurate and reliable, and different production stocks have small band errors.
Description
Technical field
The present invention relates to the multiband calibration steps of a kind of LED chip test, belong to the technical field of LED chip test.
Background technology
LED chip, as the core component of semiconductor lighting, plays an important role at illuminating industry.And the quality of its photoelectric properties of LED chip is by testing direct decision, how to ensure that the accuracy of its basic photoelectric properties and stability are the keys ensureing LED chip quality.
Along with the development of encapsulation technology and application, the photoelectric properties of present stage LED market to chip are had higher requirement, and how to ensure that the accuracy of testing and stability are the keys of testing.The correcting mode that different sizes, electrode shape, substrate type, wafer cutting expansion spacing, tester table receipts light framework, each producer provide etc. technological factor is larger on optical parameter impact, all can the mutual correction between individual board be had an impact, so how to ensure that the consistance that distinct device is tested and accuracy are the keys of testing.And LED luminous intensity or luminous power export different along with wavelength variations, plot a distribution curve---spectral distribution curve.After this curve is determined, the associated chroma mathematic(al) parameter such as relevant predominant wavelength, purity of device is also thereupon fixed, so the accuracy of wavelength directly affects accuracy and the stability of its each photoelectric parameter.And chip testing completes and all could will classify to its performance through test, along with the progress of technology and the lean demand in market, more and more rigorous to this requirement.The scope of classification is less, meticulousr, for the stability of test data and accuracy requirement higher.The various modes that industry uses to correct the difference between production board, be all the mode that compensated by difference mean value by Data correction in certain error range.
Present stage many employings mean value Integral correction method, collect the LED die of producing the different predominant wavelength of line, luminous light intensity, and each possible predominant wavelength, luminous light intensity are measured by standard board and production board by it, for all photosensitiveness data mean value calculation being drawn the offset of predominant wavelength and light intensity, single compensation and adjustment are done to production board.The method is a kind of product predominant wavelength, luminous light intensity is produced in board process in correction and distributed, and needs adjustment tester table compensating coefficient value, the point that same tube core surveys data and standard board at the point producing board is surveyed data point reuse within error range.There is following shortcoming in this method: when 1) comparatively wide, the classification of Data distribution8 is very thin, the error that board exists just is widened.2) when there being multiple stage test machine, the individual difference that the factors such as processing procedure, material, expansion cause is there is between tested crystal grain, obtain test data accuracy lower, can not ensure that board error is in error range, board consistance can not be guaranteed.3) because the chip that standard board point is surveyed is the square piece of shipment, so be finally judge whether this tube core meets the standard of shipment with the data of square piece for main, because proofreading multiple stage tester table with overall difference mean value, the error amount existed between multiple stage test machine is very large, wavelength dispersion degree is large, each optical parameter dispersion will be caused large, so be easy to like this cause production square piece not reach the situation of shipment standard.
The bearing calibration of LED grain production equipment disclosed in Chinese patent literature CN102214741A, propose a kind of bearing calibration of LED grain production equipment, the correction crystal grain adopted encapsulates the preparation crystal grain obtained, correcting crystal grain can be the crystal grain being in the different production phase, as the stable crystal grain on non-pad pasting, encapsulates complete stable crystal grain etc.Its shortcoming is that this preparation crystal grain affects by encapsulation factor, returns spot measurement machine test variable effect large, namely affects accuracy.And the method poor operability in existing product line.
Chinese patent CN104849683A discloses a kind of LED chip measuring equipment calibration steps, belongs to LED chip measuring equipment calibration field; A kind of LED chip measuring equipment calibration steps that can obtain accurate measurement data is provided; First the required crystal grain of screening calibration is as model die; Testing standard machine measurement standard crystal grain obtains initial value A; IS canonical measure equipment obtains standard value B; The brightness field of brightness field to initial value A of standard value B is used to do scatter diagram, obtain the calibration value that fitting function can obtain brightness, matched curve can use once fitting or quadratic fit according to demand, and once fitting obtains fitting function y=ax+b, and wherein a, b are the calibration value of brightness; Quadratic fit obtains fitting function y=ax2+bx+c, and wherein a, b, c are the calibration value of brightness; The wavelength field of wavelength field to initial value of standard value B does difference, obtains the difference of band wavelength, gets the calibration value of waveband difference value mean value as wavelength.The method openly stresses it is emphasised that how to carry out brightness calibration to LED chip testing apparatus, take to utilize matched curve to obtain, but what wavelength was taked is overall difference average penalty method, namely the shortcoming data of this kind of wavelength compensation distributed more widely, classification very thin time, each wave band error that board exists just is widened, thus easily affects stability and the consistance of its photoelectric parameter.
Summary of the invention
For the deficiencies in the prior art, the invention provides the multiband calibration steps of a kind of LED chip test, this method ensure that each wave band of testing of equipment and the little and problem that dispersion is little of standard value difference error, simple and efficient.
Technical scheme of the present invention is:
A multiband calibration steps for LED chip test, comprises step as follows:
(1) production standard print: selection standard core grain pendulum, on a blue film, is made into standard sample of photo; Described standard core grain-by-grain seed selection target wave band, in the whole wavelength band that namely wavelength is inter-product, luminous power is in main power section;
(2) utilize Standard Machine to test wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; The starting point of described standard sample of photo and point survey direction to utilize Standard Machine to determine;
(3) production board is utilized to test the wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; Utilize and produce board and the starting point of described standard sample of photo and point are surveyed direction and the starting point in described step (2) and puts that to survey direction difference corresponding consistent; The advantage herein designed is, is convenient to the point-to-point comparison of data;
(4) comparing takes point-to-point corresponding subrane comparison:
The wavelength that described Standard Machine and described production board are tested standard sample of photo is respectively carried out point-to-pointly do difference, then the wavelength of Standard Machine testing standard print and described difference are done scatter diagram, wherein horizontal ordinate is the wavelength of Standard Machine testing standard print, and ordinate is described difference; As shown in Figure 1, 2;
(5) according to described scatter diagram to each wave band correction:
In described scatter diagram, determine a calibration waveband difference value center line, namely with the geometric center of distribution difference in scatter diagram for calibration waveband difference value center line; The scope at the calibration waveband difference value center line place of scatter diagram makes its each wave band gather to it; The corresponding difference of described calibration waveband difference value center line;
By described loose point according to band class, determine a waveband difference value center line in each wave band respectively, described waveband difference value center line is with the difference center of point loose in corresponding wave band; The corresponding difference of every bar waveband difference value center line;
Longitudinally concentrate to described waveband difference value center line and revise each wave band and fall apart a little: described loose point all with the waveband difference value center line of place wave band for benchmark, move to described calibration waveband difference value center line according to the mobile range of waveband difference value center line, the taking to move of the difference corresponding to described waveband difference value center line subtracts, to move down the principle adding displacement consistent with the correction of described calibration waveband difference value center line;
(6) to the loose point after step (5) process all with described calibration waveband difference value center line for benchmark, overall to vertically move with described calibration waveband difference value center line, with make each wave band fall apart a little corresponding to difference range for-0.3nm ~+0.3nm;
(7) according to the modification method of step (3)-step (6), described production board is calibrated consistent with each wave band of Standard Machine; After calibration, fluctuate consistent and overall offset is worth near 0, namely ensure that and produce the accuracy of board and the consistance of each wave band.
Preferred according to the present invention, in step (1), selection standard core grain is put on a blue film, every 1nm mono-grade, every grade 3-5 standard core grain.
Advantage of the present invention is:
After utilizing calibration steps of the present invention to calibrate equipment, improve test accuracy and consistance, measured value with crystallite dimension, intercrystalline apart from and the error of environmental change little.When measuring equipment after the calibration of employing the method for the invention is tested LED chip, its test data is accurately reliable, and the error of each wave band of different production board is little simultaneously.
Accompanying drawing explanation
Fig. 1 is for producing the scatter diagram before board calibration described in the embodiment of the present invention 1;
Fig. 2 is for producing the scatter diagram before board calibration described in the embodiment of the present invention 2;
Fig. 3 takes the scatter diagram after multiband calibration for producing board described in the embodiment of the present invention 2;
Fig. 4 is the arrangement mode schematic diagram of standard sample of photo described in the embodiment of the present invention 1.
Embodiment
Now according to embodiment and Figure of description, the present invention is described in detail, but is not limited thereto.
Embodiment 1,
A multiband calibration steps for LED chip test, comprises step as follows:
(1) production standard print: selection standard core grain pendulum, on a blue film, is made into standard sample of photo; Described standard core grain-by-grain seed selection target wave band (445-485nm), in the whole wavelength band that namely wavelength is inter-product, luminous power is in main power section; Choose 160 standard core grains by separator by required standard core grain overall alignment on a blue film, according to 20 × 8 arrangement be made into standard sample of photo, mode arranges as shown in Figure 4; Preparing this type of identical standard print 3-5 part gives over to for subsequent use;
(2) utilize Standard Machine to test wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; The starting point of described standard sample of photo and point survey direction to utilize Standard Machine to determine; Control described Standard Machine in error range, namely voltage error value is within ± 0.01V, and light intensity error is within ± 1%, and wavelength error floats within ± 0.3nm, and overall deviate is near 0 o'clock;
(3) production board is utilized to test the wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; Utilize and produce board and the starting point of described standard sample of photo and point are surveyed direction and the starting point in described step (2) and puts that to survey direction difference corresponding consistent; The advantage herein designed is, is convenient to the point-to-point comparison of data;
(4) comparing takes point-to-point corresponding subrane comparison:
The wavelength that described Standard Machine and described production board are tested standard sample of photo is respectively carried out point-to-pointly do difference, then the wavelength of Standard Machine testing standard print and described difference are done scatter diagram, wherein horizontal ordinate is the wavelength of Standard Machine testing standard print, and ordinate is described difference; As shown in Figure 1;
(5) according to described scatter diagram to each wave band correction:
In described scatter diagram, determine a calibration waveband difference value center line, namely with the geometric center of distribution difference in scatter diagram for calibration waveband difference value center line; The scope at the calibration waveband difference value center line place of scatter diagram makes its each wave band gather to it; The corresponding difference of described calibration waveband difference value center line; As shown in fig. 1, this difference corresponding to calibration waveband difference value center line is-0.55nm (scatter diagram difference upper limit is 0, and lower limit is-1.1nm, and namely the geometric center of difference is-0.55nm);
By described loose point according to band class, determine a waveband difference value center line in each wave band respectively, described waveband difference value center line is with the difference center of point loose in corresponding wave band; The corresponding difference of every bar waveband difference value center line;
As shown in Figure 1:
In wave band 445-455nm, the difference of its corresponding waveband difference value center line is-0.15nm;
In wave band 456-475nm, the difference of its corresponding waveband difference value center line is-0.4nm;
In wave band 476-485nm, the difference of its corresponding waveband difference value center line is-0.8nm;
Longitudinally concentrate to described waveband difference value center line and revise each wave band and fall apart a little: described loose point all with the waveband difference value center line of place wave band for benchmark, move to described calibration waveband difference value center line according to the mobile range of waveband difference value center line, the taking to move of the difference corresponding to described waveband difference value center line subtracts, to move down the principle adding displacement consistent with the correction of described calibration waveband difference value center line;
Namely, by waveband difference value center line corresponding for wave band 445-455nm to described calibration waveband difference value center line correction (-0.15nm-(-0.55nm) nm=0.4nm), the mobile range of the loose point in this wave band according to waveband difference value center line is moved down to described calibration waveband difference value center line: namely 445-455nm wave band offset adds 0.4nm simultaneously;
By waveband difference value center line corresponding for wave band 456-475nm to described calibration waveband difference value center line correction (-0.4nm-(-0.55nm)=0.15nm), the mobile range of the loose point in this wave band according to waveband difference value center line is moved down to described calibration waveband difference value center line: namely 456-475nm wave band offset adds 0.15nm simultaneously;
By waveband difference value center line corresponding for wave band 476-485nm to described calibration waveband difference value center line correction (-0.8nm-(-0.55nm)=-0.25nm), the mobile range of the loose point in this wave band according to waveband difference value center line is moved on described calibration waveband difference value center line: namely 476-485nm wave band offset subtracts 0.25nm simultaneously;
(6) to through step (5) process after loose point all with described calibration waveband difference value center line for benchmark, overall with the longitudinal 0.55nm that moves up of described calibration waveband difference value center line, namely overall wave band offset subtracts 0.55nm, and the difference range corresponding to described each wave band falls apart a little is-0.3nm ~+0.3nm; As shown in Figure 3;
(7) according to the modification method of step (3)-step (6), described production board is calibrated consistent with each wave band of Standard Machine; After calibration, fluctuate consistent and overall offset is worth near 0, namely ensure that and produce the accuracy of board and the consistance of each wave band.
In step (1), selection standard core grain is put on a blue film, every 1nm mono-grade, every grade 3-5 standard core grain.
Embodiment 2,
The multiband calibration steps of a kind of LED chip test as described in Example 1, its difference is,
Described step (4) comparing takes point-to-point corresponding subrane comparison:
The wavelength that described Standard Machine and described production board are tested standard sample of photo is respectively carried out point-to-pointly do difference, then the wavelength of Standard Machine testing standard print and described difference are done scatter diagram, wherein horizontal ordinate is the wavelength of Standard Machine testing standard print, and ordinate is described difference; As shown in Figure 2;
(5) according to described scatter diagram to each wave band correction:
In described scatter diagram, determine a calibration waveband difference value center line, namely with the geometric center of distribution difference in scatter diagram for calibration waveband difference value center line; The scope at the calibration waveband difference value center line place of scatter diagram makes its each wave band gather to it; The corresponding difference of described calibration waveband difference value center line; As shown in Figure 2, this difference corresponding to calibration waveband difference value center line is-0.6nm (scatter diagram difference upper limit is 0.2nm, and lower limit is-1nm, and namely the geometric center of difference is-0.6nm);
By described loose point according to band class, determine a waveband difference value center line in each wave band respectively, described waveband difference value center line is with the difference center of point loose in corresponding wave band; The corresponding difference of every bar waveband difference value center line;
As shown in Figure 2:
In wave band 445-451nm, the difference of its corresponding waveband difference value center line is-0.5nm;
In wave band 452-467nm, the difference of its corresponding waveband difference value center line is-0.6nm;
In wave band 468-485nm, the difference of its corresponding waveband difference value center line is-0.4nm;
Longitudinally concentrate to described waveband difference value center line and revise each wave band and fall apart a little: described loose point all with the waveband difference value center line of place wave band for benchmark, move to described calibration waveband difference value center line according to the mobile range of waveband difference value center line, the taking to move of the difference corresponding to described waveband difference value center line subtracts, to move down the principle adding displacement consistent with the correction of described calibration waveband difference value center line;
Namely, by waveband difference value center line corresponding for wave band 445-451nm to described calibration waveband difference value center line correction (-0.5nm-(-0.6nm)=0.1nm), the mobile range of the loose point in this wave band according to waveband difference value center line is moved down to described calibration waveband difference value center line: namely 445-451nm wave band offset adds 0.1nm simultaneously;
By waveband difference value center line corresponding for wave band 452-467nm to described calibration waveband difference value center line correction (-0.6nm-(-0.6nm)=0nm), 452-467nm wave band is without the need to movement, and namely this wave band is without the need to compensating;
By waveband difference value center line corresponding for wave band 468-485nm to described calibration waveband difference value center line correction (-0.4nm-(-0.6nm)=0.2nm), the mobile range of the loose point in this wave band according to waveband difference value center line is moved down to described calibration waveband difference value center line: namely 468-485nm wave band offset adds 0.2nm simultaneously;
(6) to through step (5) process after loose point all with described calibration waveband difference value center line for benchmark, 0.6nm is moved on entirety is longitudinal with described calibration waveband difference value center line, namely overall wave band offset subtracts 0.6nm, and the difference range corresponding to described each wave band falls apart a little is-0.3nm ~+0.3nm; As shown in Figure 3;
(7) according to the modification method of step (3)-step (6), described production board is calibrated consistent with each wave band of Standard Machine; After calibration, fluctuate consistent and overall offset is worth near 0, namely ensure that and produce the accuracy of board and the consistance of each wave band.
Claims (2)
1. a multiband calibration steps for LED chip test, it is characterized in that, it is as follows that the method comprising the steps of:
(1) production standard print: selection standard core grain pendulum, on a blue film, is made into standard sample of photo;
(2) utilize Standard Machine to test wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; The starting point of described standard sample of photo and point survey direction to utilize Standard Machine to determine;
(3) production board is utilized to test the wavelength that described standard sample of photo obtains each wave band of described standard sample of photo; Utilize and produce board and the starting point of described standard sample of photo and point are surveyed direction and the starting point in described step (2) and puts that to survey direction difference corresponding consistent;
(4) comparing takes point-to-point corresponding subrane comparison:
The wavelength that described Standard Machine and described production board are tested standard sample of photo is respectively carried out point-to-pointly do difference, then the wavelength of Standard Machine testing standard print and described difference are done scatter diagram, wherein horizontal ordinate is the wavelength of Standard Machine testing standard print, and ordinate is described difference;
(5) according to described scatter diagram to each wave band correction:
In described scatter diagram, determine a calibration waveband difference value center line, namely with the geometric center of distribution difference in scatter diagram for calibration waveband difference value center line; The corresponding difference of described calibration waveband difference value center line;
By described loose point according to band class, determine a waveband difference value center line in each wave band respectively, described waveband difference value center line is with the difference center of point loose in corresponding wave band; The corresponding difference of every bar waveband difference value center line;
Longitudinally concentrate to described waveband difference value center line and revise each wave band and fall apart a little: described loose point all with the waveband difference value center line of place wave band for benchmark, move to described calibration waveband difference value center line according to the mobile range of waveband difference value center line, the taking to move of the difference corresponding to described waveband difference value center line subtracts, to move down the principle adding displacement consistent with the correction of described calibration waveband difference value center line;
(6) to the loose point after step (5) process all with described calibration waveband difference value center line for benchmark, overall to vertically move with described calibration waveband difference value center line, with make each wave band fall apart a little corresponding to difference range for-0.3nm ~+0.3nm;
(7) according to the modification method of step (3)-step (6), described production board is calibrated consistent with each wave band of Standard Machine.
2. the multiband calibration steps of a kind of LED chip test as claimed in claim 1, it is characterized in that, in step (1), selection standard core grain is put on a blue film, every 1nm mono-grade, every grade 3-5 standard core grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510738342.8A CN105388439A (en) | 2015-11-03 | 2015-11-03 | Multiband calibration method for LED chip test |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510738342.8A CN105388439A (en) | 2015-11-03 | 2015-11-03 | Multiband calibration method for LED chip test |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105388439A true CN105388439A (en) | 2016-03-09 |
Family
ID=55420930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510738342.8A Pending CN105388439A (en) | 2015-11-03 | 2015-11-03 | Multiband calibration method for LED chip test |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105388439A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093819A (en) * | 2016-05-28 | 2016-11-09 | 湘能华磊光电股份有限公司 | Make method and the method for correcting chip test machine of all band contrast crystal grain |
| CN110349890A (en) * | 2019-08-12 | 2019-10-18 | 盐城阿特斯阳光能源科技有限公司 | The calibration method of solar cell tester table |
| CN111293050A (en) * | 2020-02-17 | 2020-06-16 | 映瑞光电科技(上海)有限公司 | Method and system for testing chip brightness value |
| CN111693846A (en) * | 2019-03-12 | 2020-09-22 | 新唐科技股份有限公司 | Chip testing system and method |
| CN112462078A (en) * | 2020-11-16 | 2021-03-09 | 三诺生物传感股份有限公司 | Method for calibrating inter-platform difference of fluorescence immunoassay analyzer |
| CN112731241A (en) * | 2020-12-23 | 2021-04-30 | 华虹半导体(无锡)有限公司 | Calibration tool and calibration method for wafer test machine |
| CN114527362A (en) * | 2020-10-30 | 2022-05-24 | 山东浪潮华光光电子股份有限公司 | Brightness calibration method for AlGaInP quaternary LED chip production machine |
| CN115376952A (en) * | 2022-10-25 | 2022-11-22 | 江西兆驰半导体有限公司 | LED wafer testing and packaging calibration method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6421120B1 (en) * | 1999-10-29 | 2002-07-16 | Agilent Technologies, Inc. | Extended wavelength calibration reference |
| CN101441165A (en) * | 2007-05-30 | 2009-05-27 | 霍夫曼-拉罗奇有限公司 | Method for wavelength calibration of spectrometer |
| CN101912256A (en) * | 2010-08-13 | 2010-12-15 | 天津大学 | Method for processing dynamic spectral data based on single-edge extraction |
| CN102007397A (en) * | 2008-04-15 | 2011-04-06 | 株式会社岛津制作所 | Gas analyzing apparatus with built-in calibration gas cell |
| CN102214741A (en) * | 2011-06-01 | 2011-10-12 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| CN102538967A (en) * | 2012-03-28 | 2012-07-04 | 科纳技术(苏州)有限公司 | High precision multi-wavelength calibration system for spectrograph |
| CN104849683A (en) * | 2015-04-14 | 2015-08-19 | 山西南烨立碁光电有限公司 | Calibration method for LED chip measuring device |
-
2015
- 2015-11-03 CN CN201510738342.8A patent/CN105388439A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6421120B1 (en) * | 1999-10-29 | 2002-07-16 | Agilent Technologies, Inc. | Extended wavelength calibration reference |
| CN101441165A (en) * | 2007-05-30 | 2009-05-27 | 霍夫曼-拉罗奇有限公司 | Method for wavelength calibration of spectrometer |
| CN102007397A (en) * | 2008-04-15 | 2011-04-06 | 株式会社岛津制作所 | Gas analyzing apparatus with built-in calibration gas cell |
| CN101912256A (en) * | 2010-08-13 | 2010-12-15 | 天津大学 | Method for processing dynamic spectral data based on single-edge extraction |
| CN102214741A (en) * | 2011-06-01 | 2011-10-12 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| CN102538967A (en) * | 2012-03-28 | 2012-07-04 | 科纳技术(苏州)有限公司 | High precision multi-wavelength calibration system for spectrograph |
| CN104849683A (en) * | 2015-04-14 | 2015-08-19 | 山西南烨立碁光电有限公司 | Calibration method for LED chip measuring device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093819A (en) * | 2016-05-28 | 2016-11-09 | 湘能华磊光电股份有限公司 | Make method and the method for correcting chip test machine of all band contrast crystal grain |
| CN106093819B (en) * | 2016-05-28 | 2020-04-28 | 湘能华磊光电股份有限公司 | Method for manufacturing full-waveband contrast crystal grains and method for correcting chip tester |
| CN111693846A (en) * | 2019-03-12 | 2020-09-22 | 新唐科技股份有限公司 | Chip testing system and method |
| CN110349890A (en) * | 2019-08-12 | 2019-10-18 | 盐城阿特斯阳光能源科技有限公司 | The calibration method of solar cell tester table |
| CN110349890B (en) * | 2019-08-12 | 2021-08-24 | 盐城阿特斯阳光能源科技有限公司 | Calibration method of solar cell testing machine |
| CN111293050A (en) * | 2020-02-17 | 2020-06-16 | 映瑞光电科技(上海)有限公司 | Method and system for testing chip brightness value |
| CN114527362A (en) * | 2020-10-30 | 2022-05-24 | 山东浪潮华光光电子股份有限公司 | Brightness calibration method for AlGaInP quaternary LED chip production machine |
| CN112462078A (en) * | 2020-11-16 | 2021-03-09 | 三诺生物传感股份有限公司 | Method for calibrating inter-platform difference of fluorescence immunoassay analyzer |
| CN112731241A (en) * | 2020-12-23 | 2021-04-30 | 华虹半导体(无锡)有限公司 | Calibration tool and calibration method for wafer test machine |
| CN112731241B (en) * | 2020-12-23 | 2024-01-19 | 华虹半导体(无锡)有限公司 | Calibration tool and calibration method for wafer test machine |
| CN115376952A (en) * | 2022-10-25 | 2022-11-22 | 江西兆驰半导体有限公司 | LED wafer testing and packaging calibration method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105388439A (en) | Multiband calibration method for LED chip test | |
| CN107209059B (en) | Method for calibrating a spectral radiometer | |
| US7907276B2 (en) | Film quality evaluation method, apparatus therefor, and production system for thin-film device | |
| CN102214741B (en) | Method for correcting LED (light emitting diode) crystal grain production facility | |
| US9080916B2 (en) | Correction factor for color response calibration | |
| CN101183025A (en) | Color measurement color difference instrument and color measurement method thereof | |
| CN104849683A (en) | Calibration method for LED chip measuring device | |
| CN110514627B (en) | Silicon wafer reflectivity measuring method and measuring device thereof | |
| CN105336635B (en) | The bearing calibration of CD-SEM device, method and CD-SEM device using CD-SEM device | |
| CN103185725A (en) | LED wafer multi-chip detection method and device | |
| CN103398956B (en) | One method growing cotton colour examining | |
| US20070002324A1 (en) | Systems and methods for profiling and synchronizing a fleet of color measurement instruments | |
| CN100414272C (en) | Integrating light radiation degree measuring system and method with spectrum analysis correction | |
| JP6094960B2 (en) | Calibration method for LED measuring apparatus and LED measuring apparatus using the method | |
| CN207163904U (en) | A kind of different levels soil nutrients variability device based on spectral reflectivity | |
| CN104062013B (en) | A kind of color projectional technique of smooth base for post laser paper leaflet | |
| CN109574546B (en) | Method for controlling artificial stone color difference | |
| CN104511437B (en) | A kind of LED component light-splitting method and system | |
| CN206847782U (en) | Spectroradio luminance meter | |
| CN110455725A (en) | A kind of evaluation method of high-pure SiC power item matter | |
| CN103542936B (en) | Based on principle component analysis calibration spectrophotometer instrument between the method for error | |
| CN107402365A (en) | A kind of calibration method of LED photovoltaic comprehensive tester | |
| Levi et al. | Self-reference procedure to reduce uncertainty in module calibration | |
| CN106596563A (en) | Solar battery cell machine vision detection platform | |
| CN106770185A (en) | A kind of elemental detection system and detection method based on ccd sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination |