CN115368150B - 一种低剥落性电熔氧化铝砖的组分及浇铸工艺及装置 - Google Patents
一种低剥落性电熔氧化铝砖的组分及浇铸工艺及装置 Download PDFInfo
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- 239000011449 brick Substances 0.000 title claims abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000005266 casting Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001948 sodium oxide Inorganic materials 0.000 claims abstract description 15
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001947 lithium oxide Inorganic materials 0.000 claims abstract description 14
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000292 calcium oxide Substances 0.000 claims abstract description 13
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
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Abstract
本发明公开了一种低剥落性电熔氧化铝砖的组分及浇铸工艺及装置，其质量百分比为：96.5％～97.5％三氧化二铝和0.1％～0.15％氧化钙，还包括0.1％～0.3％二氧化硅、1％～2％氧化钠和1.％～1.5％氧化锂，本低剥落性电熔氧化铝砖的组分及浇铸工艺及装置减小了电熔氧化铝砖砖体内应力小，减少裂纹，提高抗剥落性，能够提高玻璃窑炉使用寿命，减少玻璃制品杂质，提高玻璃制品良品率。
Description
技术领域
本发明涉及电熔高性能材料技术领域，具体为一种低剥落性电熔氧化铝砖的组分及浇铸工艺及装置。
背景技术
为了满足全氧燃烧玻璃窑炉上部空间温度高的特点，需要耐高温能力强的材料，所以普通的硅砖就难以适用，而电熔氧化铝具有玻璃相析出量少，耐高温能力强，抗热震性好的特点，正好可以满足要求。
但普通的电熔氧化铝砖，晶相主要为刚玉相，并存在少量玻璃相，随着氧化钠含量的增加，熔渣沿其气孔与裂隙渗入砖内，并与之相互作用形成与结构和性质不同的变质层，当温度发生剧烈变化时，这种变质层容易崩裂、剥落，而剥片进入玻璃液中，就会对玻璃液造成污染，降低玻璃制品的良品率，减少玻璃窑炉的使用寿命。
发明内容
本发明要解决的技术问题是克服现有的缺陷，提供一种低剥落性电熔氧化铝砖的组分及浇铸工艺及装置，具有内应力小、砖体裂纹少、抗剥落性强的特性，能够提高玻璃窑炉使用寿命，减少玻璃制品杂质，提高玻璃制品良品率，可以有效解决背景技术中的问题。
为实现上述目的，本发明提供如下技术方案：一种低剥落性电熔氧化铝砖的组分，其质量百分比为：96.5％～97.5％三氧化二铝和0.1％～0.15％氧化钙，还包括0.1％～0.3％二氧化硅、1％～2％氧化钠和1.％～1.5％氧化锂。
作为本发明的一种优选技术方案，包括0.1％二氧化硅、1％氧化钠、0.15％氧化钙、97.5％三氧化二铝、1.2％氧化锂。
作为本发明的一种优选技术方案，包括0.2％二氧化硅、1％氧化钠、0.12％氧化钙、97％三氧化二铝、1.2％氧化锂。
作为本发明的一种优选技术方案，包括0.3％二氧化硅、2％氧化钠、0.15％氧化钙、96.5％三氧化二铝、1％氧化锂。
作为本发明的一种优选技术方案，包括0.3％二氧化硅、1.5％氧化钠、0.1％氧化钙、97％三氧化二铝、1％氧化锂。
作为本发明的一种优选技术方案，包括0.1％二氧化硅、1.5％氧化钠、0.12％氧化钙、96.5％三氧化二铝、1.5％氧化锂。
一种低剥落性电熔氧化铝砖的组分的浇铸工艺，将熔融的料液均匀的平铺在铸型内，使其内部温度均匀，制成结构致密的电熔氧化铝砖。
一种低剥落性电熔氧化铝砖浇铸工艺的装置，包括控制箱，所述控制箱位于铸型的正上方，控制箱通过设置在前后两端的支架与地面连接，所述控制箱的下端开有敞口，敞口内设置有螺杆，螺杆的外侧面螺纹连接有滑移块，所述螺杆一端与驱动电机连接，所述滑移块的下端对称设置有固定块，两个固定块之间固定有注射管，注射管的上端通过导管与料液箱连接，所述注射管和导管的内部均设置有耐高温的内衬。
作为本发明的一种优选技术方案，所述注射管的外侧面设置有用于控制其流量大小的调节阀。
作为本发明的一种优选技术方案，所述注射管的下端为上宽下窄的锥形口。
与现有技术相比，本发明的有益效果是：本低剥落性电熔氧化铝砖的组分及浇铸工艺及装置降低了二氧化硅和氧化钠的含量，并加入氧化锂作为助熔剂，从而使电熔氧化铝砖减少砖体内应力，减少砖体裂纹，使氧化铝砖具有低剥落性，提高了玻璃窑炉寿命，减少剥落杂质对玻璃液的污染，提高玻璃制品的良品率，通过设置浇铸装置可以对料液进行均匀浇铸，使各处的温度均匀，避免因部分区域温度过高产生温差导致出现裂开的现象，保证产品的质量。
附图说明
图1为本发明结构示意图。
图中：1铸型、2控制箱、3螺杆、4驱动电机、5滑移块、6固定块、7注射管、8调节阀、9导管、10支架。
具体实施方式
下面将结合本发明实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例(为描述与理解方便，以下以图1的上方为上方进行描述)。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1：
一种低剥落性电熔氧化铝砖的组分，所述电熔氧化铝砖质量百分比为：0.1％二氧化硅、1％氧化钠、0.15％氧化钙、97.5％三氧化二铝、1.2％氧化锂。
该实施例的气孔率≤1％，体积密度≥3.49g/cm3，玻璃相渗出量≤0.1％，剥落率≤0.05％。
实施例2：
一种低剥落性电熔氧化铝砖的组分，所述电熔氧化铝砖质量百分比为：0.2％二氧化硅、1％氧化钠、0.12％氧化钙、97％三氧化二铝、1.2％氧化锂。
该实施例的气孔率≤1.5％，体积密度≥3.47g/cm3，玻璃相渗出量≤0.1％，剥落率≤0.1％。
实施例3：
一种低剥落性电熔氧化铝砖的组分，所述电熔氧化铝砖质量百分比为：0.3％二氧化硅、2％氧化钠、0.15％氧化钙、96.5％三氧化二铝、1％氧化锂。
该实施例的气孔率≤2％，体积密度≥3.45g/cm3，玻璃相渗出量≤0.3％，剥落率≤0.2％。
实施例4：
一种低剥落性电熔氧化铝砖的组分，所述电熔氧化铝砖质量百分比为：0.3％二氧化硅、1.5％氧化钠、0.1％氧化钙、97％三氧化二铝、1％氧化锂。
该实施例的气孔率≤1.5％，体积密度≥3.47g/cm3，玻璃相渗出量≤0.2％，剥落率≤0.15％。
实施例5：
一种低剥落性电熔氧化铝砖的组分，所述电熔氧化铝砖质量百分比为：0.1％二氧化硅、1.5％氧化钠、0.12％氧化钙、96.5％三氧化二铝、1.5％氧化锂。
该实施例的气孔率≤2％，体积密度≥3.45g/cm3，玻璃相渗出量≤0.3％，剥落率≤0.1％。
以上各实施例所述的气孔率和体积密度实验条件，在常温条件下进行，试样浸渍时应在抽真空装置至其剩余压力小于2.5KPa条件下进行，玻璃相渗出试验条件为1500℃下4h，剥落率试验条件为1500℃下36h。
本发明可以减小了电熔氧化铝砖砖体内应力小，减少裂纹，提高抗剥落性，能够提高玻璃窑炉使用寿命，减少玻璃制品杂质，提高玻璃制品良品率。
一种低剥落性电熔氧化铝砖浇铸工艺的装置，包括控制箱2，控制箱2位于铸型1的正上方，控制箱2通过设置在前后两端的支架10与地面连接，控制箱2的下端开有敞口，敞口内设置有螺杆3，螺杆3的外侧面螺纹连接有滑移块5，螺杆3一端与驱动电机4连接，滑移块5的下端对称设置有固定块6，两个固定块6之间固定有注射管7，注射管7的外侧面设置有用于控制其流量大小的调节阀8，调节阀8的设置便于根据铸型1的大小调节流量，注射管7的下端为上宽下窄的锥形口，便于将料液导入至铸型1内，注射管7的上端通过导管9与料液箱连接，将熔融的料液均匀的浇铸在铸型1内，制成结构致密的电熔氧化铝砖，通过控制驱动电机4的正转和反转可以控制滑移块5在螺杆3的移动方向，进而将料液均匀的浇铸在铸型1内，使各处的温度均匀，避免因部分区域温度过高产生温差导致出现裂开的现象；此外，由于料液在经过熔融后温度比较高，因此在料液流过的位置如导管9、注射管7内部均设置有耐高温的内衬。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (2)
1.一种低剥落性电熔氧化铝砖浇铸装置，其特征在于：包括控制箱（2），所述控制箱（2）位于铸型（1）的正上方，控制箱（2）通过设置在前后两端的支架（10）与地面连接，所述控制箱（2）的下端开有敞口，敞口内设置有螺杆（3），螺杆（3）的外侧面螺纹连接有滑移块（5），所述螺杆（3）一端与驱动电机（4）连接，所述滑移块（5）的下端对称设置有固定块（6），两个固定块（6）之间固定有注射管（7），注射管（7）的上端通过导管（9）与料液箱连接，所述注射管（7）和导管（9）的内部均设置有耐高温的内衬，所述注射管（7）的外侧面设置有用于控制其流量大小的调节阀（8），所述注射管（7）的下端为上宽下窄的锥形口。
2.一种如权利要求1所述的浇铸装置制备低剥落性电熔氧化铝砖的浇铸工艺，其特征在于：其低剥落性电熔氧化铝砖的组分为：96.5%～97.5%三氧化二铝和0.1%～0.15%氧化钙， 0.1%～0.3%二氧化硅、1%～2%氧化钠和1.%～1.5%氧化锂，将上述组分熔融的料液通过注射管（7）导入至铸型（1）内，通过控制驱动电机（4）的正转和反转可以控制滑移块（5）在螺杆（3）的移动方向，使各处的温度均匀，制成结构致密的电熔氧化铝砖。
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