CN115360086A - Cutting and stripping process for batch production of SiC slices - Google Patents

Cutting and stripping process for batch production of SiC slices Download PDF

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Publication number
CN115360086A
CN115360086A CN202210892183.7A CN202210892183A CN115360086A CN 115360086 A CN115360086 A CN 115360086A CN 202210892183 A CN202210892183 A CN 202210892183A CN 115360086 A CN115360086 A CN 115360086A
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sic
thick
wafers
cutting
carrying disc
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CN202210892183.7A
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Chinese (zh)
Inventor
严立巍
文锺
林春慧
刘文杰
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Zhejiang Tongxinqi Technology Co ltd
Zhongsheng Kunpeng Optoelectronic Semiconductor Co ltd
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Zhejiang Tongxinqi Technology Co ltd
Zhongsheng Kunpeng Optoelectronic Semiconductor Co ltd
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Priority to CN202210892183.7A priority Critical patent/CN115360086A/en
Publication of CN115360086A publication Critical patent/CN115360086A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to the technical field of SiC wafer cutting and stripping, and discloses a cutting and stripping process for producing SiC slices in batch, which comprises the following steps: cutting and grinding the SiC crystal ingot to obtain a SiC thick crystal column, cutting and grinding to obtain two SiC thick wafers with the same thickness, bonding the SiC thick wafers between a first glass carrying disc and a second glass carrying disc, placing the SiC thick wafers into a carrying cavity filled with a solution, sealing the SiC thick wafers through a sealing cover provided with a vacuum adsorption device on the carrying cavity, adsorbing the first glass carrying disc by the vacuum adsorption device, heating the carrying cavity at constant temperature to strip the SiC thick wafers along the invisible cutting surface, taking out the SiC thick wafers, and grinding and polishing the SiC thick wafers to obtain at least four SiC thin wafers.

Description

Cutting and stripping process for batch production of SiC slices
Technical Field
The invention relates to the technical field of SiC wafer cutting and stripping, in particular to a cutting and stripping process for producing SiC slices in batch.
Background
Silicon carbide wafers have characteristics such as a forbidden band, a drift velocity, a breakdown voltage, a thermal conductivity, a high temperature resistance, etc. several times higher than those of conventional silicon, and are used in many fields.
The application number in the prior art is CN202111581996.6, which discloses a wafer cutting method and a wafer cutting device, wherein a wafer to be processed is fixed, then is cut and cleaned at least twice, and is processed in a segmented manner, so that the size of the wafer is ensured to meet the requirements of chip processing and use, the operation is convenient, and the stability and yield of products are improved.
However, after the crystal ingot is cut, ground and polished for the first time, a thin wafer is generated, a plurality of thin wafers are prepared, the crystal ingot needs to be cut for a plurality of times in sequence, the crystal ingot needs to be peeled after being cut, then the cut surface needs to be ground, the thin wafers can be prepared through repeated operation, the operation is troublesome, the working efficiency is low, the large-batch preparation of the thin wafers cannot be realized in a short time, and a cutting and peeling process for producing SiC sheets in batches is designed for solving the problem of efficiency of cutting and peeling the thin wafers in the prior art.
Disclosure of Invention
The invention aims to provide a segmentation and peeling process for producing SiC thin wafers in batch, which aims to solve the problem of segmentation and peeling of the SiC thin wafers produced in batch in the prior art.
The purpose of the invention can be realized by the following technical scheme:
a separation and peeling process for producing SiC sheets in batch, comprising the steps of:
s1, cutting the SiC crystal ingot, cutting a thick SiC crystal column from the upper SiC crystal ingot, and grinding and polishing a cutting surface.
And S2, carrying out equidistant cutting on the thick SiC crystal column cut in the step S1 to form two thick SiC wafers with the same thickness, and grinding and polishing the cutting surfaces on the thick SiC wafers.
And S3, taking out the first glass carrying disc, bonding the SiC thick wafer obtained in the step S2 on the first glass carrying disc, and then carrying out laser invisible cutting on the SiC thick wafer.
And S4, taking out the second glass carrying disc, and bonding at least two SiC thick wafers bonded with the first glass carrying disc on the second glass carrying disc.
S5, taking out the bearing cavity filled with the solution, wherein a sealing cover is arranged on the bearing cavity, and a vacuum adsorption device used for adsorbing the first glass bearing disc is arranged on one side of the sealing cover.
S6, adsorbing the first glass carrying disc bonded on the SiC thick wafer by using a vacuum adsorption device, and putting the second glass carrying disc and the SiC thick wafer bonded with the first glass carrying disc into the carrying cavity.
And S7, heating the bearing cavity at constant temperature, and etching and stripping the SiC thick wafer along the invisible cutting surface by the solution to form two SiC thin wafers.
S8, taking the first glass carrying disc and the second glass carrying disc out grinding and polishing treatment on the invisible cutting surface of the SiC thin wafer from the bearing cavity, then performing debonding on the SiC thin wafer and taking out the surface adhesive to obtain at least four SiC thin wafers.
Furthermore, the SiC crystal ingot and the thick SiC crystal column are cut by adopting a laser cutting technology or a diamond wire cutting technology.
Furthermore, the thickness of the thick SiC crystal column in the S1 is 300-1000 μm.
Further, the thickness of the SiC thick wafer obtained by cutting in the step S2 is 125-475 microns.
Furthermore, the diameter of the second glass carrying disc is larger than that of the first glass carrying disc, one surface of the SiC thick wafer is bonded with the first glass carrying disc through an adhesive, and the other surface of the SiC thick wafer is bonded with the second glass carrying disc through the adhesive.
Further, the number of vacuum suction devices in S5 depends on the number of thick SiC wafers bonded to the second glass carrier plate.
Further, the solution is a strong alkaline solution, including a NaOH solution and a KOH solution.
Further, the constant-temperature heating time in the S7 is 30-60min, and the heating temperature is 200-250 ℃.
Further, the thickness of the SiC thin wafer obtained in S8 is 37.5-212.5 μm.
Further, the grinding and polishing process in S8 includes simultaneously grinding and polishing the invisible cut surfaces of the thin SiC wafers on the second glass carrier plate.
The invention has the beneficial effects that:
1. the cutting and stripping process comprises the steps of cutting a SiC thick crystal column with a certain length from a SiC crystal ingot, cutting and grinding the SiC thick crystal column to form two SiC thick wafers, finally cutting and stripping the SiC thick wafers to obtain SiC thin wafers, and carrying out batch stripping treatment by bonding the SiC thick wafers on a second glass carrying disc in batches, so that batch preparation of the SiC thin wafers is realized, and the production efficiency of the SiC thin wafers is improved;
2. according to the segmentation stripping process, the first glass carrying disc and the second glass carrying disc are adopted to bond and fix the SiC thick wafer, so that stable stripping can be conveniently carried out in a solution of the carrying cavity, meanwhile, the SiC thin wafer can be conveniently taken out after stripping, subsequent grinding and polishing treatment is facilitated, and the production efficiency is further improved.
3. The cutting and stripping process has the advantages of less cutting times, less material loss of the wafer, production cost saving and benefit improvement.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic flow diagram of S1 and S2 of the present invention;
FIG. 2 is a schematic flow diagram of S3, S4 of the present invention;
FIG. 3 is a top view of a second glass carrier disk for bonding thick SiC wafers of the present invention;
FIG. 4 is a schematic diagram of a SiC thick wafer bond structure of the present invention;
FIG. 5 is a flow chart of the present invention S5, S6, S7, S8.
The reference numbers are as follows: 1-SiC crystal ingot, 2-SiC thick crystal column, 3-SiC thick wafer, 4-first glass carrying disc, 5-adhesive, 6-SiC thin wafer, 7-second glass carrying disc, 8-carrying cavity, 9-sealing cover, 10-vacuum adsorption device and 11-solution.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1 to 5, a separation and exfoliation process for mass production of SiC wafers, the separation and exfoliation process comprising the steps of:
s1, cutting a thick SiC crystal column 2 from the SiC crystal ingot 1 by adopting a laser cutting technology or a diamond wire cutting technology, and grinding and polishing a cutting surface to obtain the thick SiC crystal column 2 with the thickness of 300-1000 mu m.
In the embodiment, the SiC thick crystal column 2 with the thickness of 800 microns is selected, and the thickness of the required rear sheet can be selected according to the size contained by the equipment in actual production, so that the thickness of the SiC thick crystal column 2 can be selected.
S2, taking down the SiC thick crystal column 2 after grinding and polishing, cutting the SiC thick crystal column 2 into two SiC thick wafers 3 with the same thickness by adopting a laser cutting technology or a diamond wire cutting technology, and grinding and polishing the cut surfaces to obtain the SiC thick wafers 3 with the thickness of 125-475 microns.
In the embodiment, the thick SiC crystal column 2 is cut to form two thick SiC wafers 3 with the thickness of 400 μm, and the two thick SiC wafers 3 with the thickness of 375 μm are obtained after grinding and polishing in S2.
And S3, bonding one surface of the obtained SiC thick wafer 3 on a first glass carrying disc 4, bonding and fixing the first glass carrying disc 4 and the SiC thick wafer 3 through an adhesive 5, placing the first glass carrying disc 4 on a laser stealth cutting machine, and carrying out laser stealth cutting on the SiC thick wafer 3 on the first glass carrying disc 4.
S4, taking out the second glass carrying disc 7 with the diameter larger than that of the first glass carrying disc 4, bonding one surface, provided with the adhesive 5, of the second glass carrying disc 7 with the smooth surface of the SiC thick wafer 3 on the first glass carrying disc 4, bonding and connecting at least two SiC thick wafers 3 on the second glass carrying disc 7, and turning the second glass carrying disc 7 and the SiC thick wafer 3 bonded with the first glass carrying disc 4 for 180 degrees together to enable the second glass carrying disc 7 to be located below the SiC thick wafer 3.
As shown in fig. 3 and 4, four SiC thick wafers 3 are bonded to the second glass boat 7 in this embodiment, and the number of SiC thick wafers 3 to be placed is determined in accordance with the amount of equipment to be accommodated in actual production.
S5, taking out the bearing cavity 8, filling the bearing cavity 8 with a solution 11, wherein the solution 11 is a strong alkaline solution comprising a NaOH solution and a KOH solution, a sealing cover 9 is arranged on the bearing cavity 8, a vacuum adsorption device 10 is arranged on one side of the sealing cover 9, and the number of the vacuum adsorption devices 10 depends on the number of the SiC thick wafers 3 bonded on the second glass carrying disc 7.
S6, adsorbing the first glass carrying disc 4 bonded on the SiC thick wafer 3 by using a vacuum adsorption device 10, putting the second glass carrying disc 7 and the SiC thick wafer 3 bonded with the first glass carrying disc 4 into a bearing cavity 8, connecting a sealing cover 9 with the bearing cavity 8 to form a sealing environment, and immersing the SiC thick wafer 3 in the solution 11.
S7, heating the bearing cavity 8 at a constant temperature of 200-250 ℃ for 30-60min, and etching the SiC thick wafer 3 by the solution 11 to enable the SiC thick wafer 3 to be etched and stripped along the invisible cutting surface to form two SiC thin wafers 6, wherein the thickness of the SiC thin wafers 6 is 37.5-212.5 mu m.
If the heating temperature in this embodiment exceeds 250 ℃, the viscosity of the adhesive is reduced.
S8, taking out the first glass carrying disc 4 and the second glass carrying disc 7 from the bearing cavity 8, grinding and polishing the invisible cutting surface of the SiC thin wafer 6, then debonding the SiC thin wafer 6 and taking out the surface adhesive to obtain at least four SiC thin wafers 6.
In this example, the thick SiC wafer 3 was delaminated to obtain 8 thin SiC wafers 6 having a thickness of 162.5. Mu.m.
Example 2
As shown in fig. 1 to 5, a separation and exfoliation process for mass production of SiC wafers, the separation and exfoliation process comprising the steps of:
s1, cutting a thick SiC crystal column 2 from the SiC crystal ingot 1 by adopting a laser cutting technology or a diamond wire cutting technology, and grinding and polishing a cutting surface to obtain the thick SiC crystal column 2 with the thickness of 300-1000 mu m.
In the embodiment, the SiC thick crystal column 2 with the thickness of 800 microns is selected, and the thickness of the required rear sheet can be selected according to the size contained in the equipment in actual production, so that the thickness of the SiC thick crystal column 2 can be selected.
S2, taking down the SiC thick crystal column 2 after grinding and polishing, cutting the SiC thick crystal column 2 into two SiC thick wafers 3 with the same thickness by adopting a laser cutting technology or a diamond wire cutting technology, and grinding and polishing the cutting surfaces to obtain the SiC thick wafers 3 with the thickness of 125-475 microns.
In the embodiment, the thick SiC crystal column 2 is cut to form two thick SiC wafers 3 with the thickness of 400 μm, and the two thick SiC wafers 3 with the thickness of 375 μm are obtained after grinding and polishing in S2.
And S3, bonding one surface of the obtained SiC thick wafer 3 on a first glass carrying disc 4, bonding and fixing the first glass carrying disc 4 and the SiC thick wafer 3 through an adhesive 5, placing the first glass carrying disc 4 on a laser invisible cutting machine, and carrying out laser invisible cutting on the SiC thick wafer 3 on the first glass carrying disc 4.
S4, taking out the second glass carrying disc 7 with the diameter larger than that of the first glass carrying disc 4, uniformly adhering a layer of adhesive 5 on the second glass carrying disc 7, turning over the SiC thick wafer 3 bonded with the first glass carrying disc 4, bonding the smooth surface of the SiC thick wafer 3 with the second glass carrying disc 7, and bonding at least two SiC thick wafers 3 on the second glass carrying disc 7.
As shown in fig. 3 and 4, four SiC thick wafers 3 are bonded to the second glass boat 7 in this embodiment, and the number of SiC thick wafers 3 to be placed is determined in accordance with the amount of equipment to be accommodated in actual production.
S5, taking out the bearing cavity 8, filling the bearing cavity 8 with a solution 11, wherein the solution 11 is a strong alkaline solution comprising a NaOH solution and a KOH solution, a sealing cover 9 is arranged on the bearing cavity 8, a vacuum adsorption device 10 is arranged on one side of the sealing cover 9, and the number of the vacuum adsorption devices 10 depends on the number of the SiC thick wafers 3 bonded on the second glass carrying disc 7.
S6, adsorbing the first glass carrying disc 4 bonded on the SiC thick wafer 3 by using the vacuum adsorption device 10, placing the second glass carrying disc 7 and the SiC thick wafer 3 bonded with the first glass carrying disc 4 into the bearing cavity 8, connecting the sealing cover 9 with the bearing cavity 8 to form a sealing environment, and immersing the SiC thick wafer 3 in the solution 11.
S7, heating the bearing cavity 8 at a constant temperature of 200-250 ℃ for 30-60min, etching the SiC thick wafer 3 by the solution 11 to enable the SiC thick wafer 3 to be etched and stripped along the invisible cutting surface to form two SiC thin wafers 6, wherein the thickness of the SiC thin wafer 6 is 37.5-212.5 mu m.
If the heating temperature in this embodiment exceeds 250 ℃, the viscosity of the adhesive is reduced.
S8, taking the first glass carrying disc 4 and the second glass carrying disc 7 out of the carrying cavity 8, meanwhile, grinding and polishing the invisible cutting surface of the SiC thin wafer 6 on the second glass carrying disc 7, grinding and polishing the invisible cutting surface of the SiC thin wafer 6 on the first glass carrying disc 4, then, de-bonding the SiC thin wafer 6, and taking out the surface adhesive to obtain at least four SiC thin wafers 6.
In this example, the thick SiC wafer 3 was peeled to obtain 8 thin SiC wafers 6 having a thickness of 162.5. Mu.m.
The beneficial effects of the embodiment 1 and the embodiment 2 are as follows: directly cutting a thick SiC crystal column 2 with a certain thickness from a SiC crystal ingot 1, carrying out half-cutting on the thick SiC crystal column 2 to form a thick SiC wafer 3, carrying out laser invisible cutting, placing a plurality of thick SiC wafers 3 on a second glass carrying disc 7, putting the wafers into a carrying cavity 8 filled with strong alkaline solution 11, heating to peel off the thick SiC wafers 3 to form thin SiC wafers 6, and processing once to obtain at least four thin SiC wafers 6.
Compared with the traditional process flow for preparing the thin wafer by carrying out single-piece cutting and stripping on the SiC crystal ingot 1, the method has the advantages that the number of the thin wafers 6 prepared at one time is increased, the production cost is saved, meanwhile, after the glass is etched in the bearing cavity 8, the second glass carrying disc 7 is taken out, the SiC thin wafers 6 on the second glass carrying disc are simultaneously polished, the processing time is shortened, and the production efficiency is improved.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, and such changes and modifications are within the scope of the invention as claimed.

Claims (10)

1. A separation and peeling process for producing SiC slices in batch is characterized by comprising the following steps:
s1, cutting the SiC crystal ingot (1), cutting a thick SiC crystal column (2) from the upper SiC crystal ingot (1), and grinding and polishing a cutting surface;
s2, equally cutting the thick SiC crystal column (2) cut in the S1 to form two thick SiC wafers (3) with the same thickness, and grinding and polishing the cutting surfaces on the thick SiC wafers (3);
s3, taking out the first glass carrying disc (4), bonding the SiC thick wafer (3) obtained in the step S2 on the first glass carrying disc (4), and then carrying out laser invisible cutting on the SiC thick wafer (3);
s4, taking out the second glass carrying disc (7), and bonding at least two SiC thick wafers (3) bonded with the first glass carrying disc (4) on the second glass carrying disc (7);
s5, taking out the bearing cavity (8) filled with the solution (11), wherein a sealing cover (9) is arranged on the bearing cavity (8), and a vacuum adsorption device (10) for adsorbing the first glass carrying disc (4) is arranged on one side of the sealing cover (9);
s6, adsorbing a first glass carrying disc (4) bonded on the SiC thick wafer (3) by using a vacuum adsorption device (10), and putting a second glass carrying disc (7) and the SiC thick wafer (3) bonded with the first glass carrying disc (4) into a bearing cavity (8);
s7, heating the bearing cavity (8) at constant temperature, and etching and stripping the SiC thick wafer (3) along the invisible cutting surface by the solution (11) to form two SiC thin wafers (6);
s8, taking the first glass carrying disc (4) and the second glass carrying disc (7) out of the carrying cavity (8), grinding and polishing the invisible cut surfaces of the SiC thin wafers (6), then debonding the SiC thin wafers (6) and taking out the surface adhesive to obtain at least four SiC thin wafers (6).
2. The separation and exfoliation process for mass production of SiC wafers according to claim 1, characterized in that the SiC ingot (1) and the SiC thick column (2) are cut using a laser cutting technique or a diamond wire cutting technique.
3. The separation and exfoliation process for the mass production of SiC flakes according to claim 1, characterized in that the thick SiC columns (2) in S1 have a thickness of 300-1000 μm.
4. The singulation lift-off process for the mass production of SiC wafers according to claim 1, characterized in that the thickness of the thick SiC wafers (3) obtained by cutting in S2 is 125-475 μm.
5. The separation and exfoliation process for the mass production of SiC wafers according to claim 1, characterized in that the second glass carrier plate (7) has a larger diameter than the first glass carrier plate (4), and the SiC thick wafer (3) is bonded to the first glass carrier plate (4) on one side by means of an adhesive (5) and to the second glass carrier plate (7) on the other side by means of the adhesive (5).
6. The singulation debonding process for the mass production of SiC wafers according to claim 5, characterized in that the number of vacuum adsorption means (10) in S5 depends on the number of SiC thick wafers (3) bonded on the second glass carrier plate (7).
7. The singulation stripping process for batch production of SiC chips according to claim 1, characterized in that the solution (11) is a strongly alkaline solution, including NaOH solution, KOH solution.
8. The separation and exfoliation process for batch production of SiC flakes according to claim 1, wherein the constant temperature heating in S7 is performed for 30-60min at a temperature of 200-250 ℃.
9. The singulation debonding process for the mass production of SiC wafers according to claim 1, characterized in that the SiC wafers (6) obtained in S8 have a thickness of 37.5-212.5 μm.
10. The singulation lift-off process for the mass production of SiC wafers according to claim 1, characterized in that the grinding and polishing process in S8 comprises simultaneous grinding and polishing of the invisible cut surfaces of the SiC wafers (6) on the second glass carrier plate (7).
CN202210892183.7A 2022-07-27 2022-07-27 Cutting and stripping process for batch production of SiC slices Pending CN115360086A (en)

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Application Number Priority Date Filing Date Title
CN202210892183.7A CN115360086A (en) 2022-07-27 2022-07-27 Cutting and stripping process for batch production of SiC slices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210892183.7A CN115360086A (en) 2022-07-27 2022-07-27 Cutting and stripping process for batch production of SiC slices

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Publication Number Publication Date
CN115360086A true CN115360086A (en) 2022-11-18

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