CN115338546A - Low-loss silicon carbide wafer slicing method - Google Patents
Low-loss silicon carbide wafer slicing method Download PDFInfo
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- CN115338546A CN115338546A CN202210758478.5A CN202210758478A CN115338546A CN 115338546 A CN115338546 A CN 115338546A CN 202210758478 A CN202210758478 A CN 202210758478A CN 115338546 A CN115338546 A CN 115338546A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
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Abstract
The invention relates to the technical field of processing of silicon carbide wafers, in particular to a low-loss silicon carbide wafer slicing method, which comprises the following steps: s1, taking a silicon carbide crystal ingot with the thickness of 3.5-6cm, and cutting the silicon carbide crystal ingot into silicon carbide columns with the thickness of 825-4000 mu m by adopting laser cutting; s2, performing laser stealth cutting on the silicon carbide column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 80-200 microns and a silicon carbide thick sheet with the thickness of 625-3920 microns on the silicon carbide column, and then coating an adhesive on the silicon carbide sheet, wherein only polishing loss is generated each time when slicing is performed, the loss generated when slicing the silicon carbide is smaller, 6 silicon carbide sheets can be separated for each 1000 microns of silicon carbide column, more silicon carbide sheets can be separated compared with the traditional multi-line cutting technology, the generated loss is smaller, and the processing cost of the silicon carbide wafer is effectively reduced.
Description
Technical Field
The invention relates to the technical field of processing of silicon carbide wafers, in particular to a low-loss silicon carbide wafer slicing method.
Background
A silicon carbide wafer, also called a silicon carbide single crystal wafer, is a sheet-like single crystal material obtained by cutting, grinding, and polishing a silicon carbide crystal in a specific crystal direction.
In the process of slicing the silicon carbide crystal, the traditional slicing method adopts multi-line cutting and laser lift-off technologies, but the multi-line cutting is limited by the thickness of the silicon carbide crystal, only silicon carbide slices with the thickness of 450-500um can be cut, and the cutting generates loss of at least 200 μm, so that the slicing of the silicon carbide crystal cannot cut more silicon carbide wafers, and excessive loss is generated, so that the processing cost of the silicon carbide wafers is increased.
Disclosure of Invention
The present invention is directed to a low-loss method for slicing a silicon carbide wafer, so as to solve the problems of the background art mentioned above.
The purpose of the invention can be realized by the following technical scheme:
a low-loss silicon carbide wafer slicing method is characterized by comprising the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 3.5-6cm, and cutting the silicon carbide crystal ingot into silicon carbide columns with the thickness of 825-4000 mu m by adopting laser cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 80-200 microns and a silicon carbide thick sheet with the thickness of 625-3920 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and bonding the glass carrier plate to the upper side of the silicon carbide sheet by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to form a bonding layer;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, quickly turning over the glass carrier plate to the lower part, quickly cooling the lower part of the glass carrier plate, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass carrier plate from the upper part of the glass carrier plate by using a sucking disc, driving the glass carrier plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, obtaining a silicon carbide sheet with the thickness of 80-200 mu m and a silicon carbide slab with the thickness of 625-3920 mu m, and grinding and polishing the silicon carbide slab; grinding and polishing the section of the silicon carbide sheet with the thickness of 80-200 mu m to form the silicon carbide sheet with two planes and the thickness of 55-175 mu m;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2n times, and separating n silicon carbide slices with the thickness of 80-200 mu m, wherein n is more than or equal to 1 and less than or equal to 38 until the thickness of the silicon carbide slab is 160-500 mu m;
s6, performing laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide sheets with the thickness of 80-200 mu m, and bonding two glass carrier plates on the surfaces of the two silicon carbide sheets through an adhesive;
s7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide slices to form two independent silicon carbide slices with the thickness of 80-200 mu m, and finally grinding the cross section of the silicon carbide slice with the thickness of 80-200 mu m obtained in the step S6 to form two silicon carbide slices with the thickness of 55-175 mu m.
Preferably, in the step S1, when laser stealth dicing is performed, the laser pulses act equidistantly, and damage is formed equidistantly, i.e., a modified layer is formed inside the silicon carbide pillar, so that the molecular bonds of the material are broken at the modified layer position, and the silicon carbide pillar is easily separated due to the brittle connection.
Preferably, in the step S3, the lower part of the silicon carbide sheet is heated, the silicon carbide sheet is heated by heat medium contact type heat conduction, the glass support plate is cooled from the lower part of the glass support plate, the silicon carbide sheet is cooled by refrigerant contact type heat conduction, and after the heating and cooling, the connection between the silicon carbide sheet and the silicon carbide slab is completely disconnected.
Preferably, in the step S3, when cooling the glass carrier from below, the cooling plate is used to carry the wafer and the glass carrier, the film carrying frame is used to carry the cooling plate, and dry ice is put into the film carrying frame.
Preferably, in the step S4, when the cross section of the silicon carbide slab is polished, a loss of 25 μm is generated during polishing.
Preferably, in the steps S4 and S7, the obtained silicon carbide wafer with the thickness of 55-175 μm is subjected to UV photolysis bonding, the glass support plate is removed from the silicon carbide wafer, and then the silicon carbide wafer is cleaned, and the adhesive is removed to obtain the silicon carbide wafer.
Preferably, in the step S6, the process of bonding the two glass carrier plates on the surfaces of the two silicon carbide sheets by using the adhesive is as follows: firstly coating an adhesive on the surfaces of one of the glass carrier plate and one of the silicon carbide sheets, bonding one surface of the glass carrier plate with the adhesive to one surface of the silicon carbide sheet with the adhesive, turning the glass carrier plate and the silicon carbide sheet, coating the adhesive on the surfaces of the other glass carrier plate and the other silicon carbide sheet, and bonding one surface of the glass carrier plate with the adhesive to one surface of the silicon carbide sheet with the adhesive so as to bond the surfaces of the two silicon carbide sheets with the glass carrier plate.
Preferably, in step S1, a loss of 300 μm is generated by laser dicing, and the number of silicon carbide wafers obtained by dicing is 8 to 53.
The invention has the beneficial effects that:
1. through bonding glass carrying disc on the carborundum thin slice that obtains at the cutting, the carborundum thin slice on the glass carrying plate is peeled off to cooperation sucking disc conveniently, produces the damage to the carborundum thin slice when avoiding peeling off the carborundum thin slice, and when polishing the carborundum thin slice, bears the weight of the carborundum thin slice by the glass carrying plate, makes things convenient for polishing and washing to the carborundum thin slice more.
2. During slicing, only grinding loss is generated at each time, the loss generated during slicing the silicon carbide is smaller, 6 silicon carbide slices can be separated from each 1000-micrometer silicon carbide column, and compared with the traditional multi-line cutting technology, the multi-line cutting technology can separate more silicon carbide slices, the generated loss is smaller, and the processing cost of the silicon carbide wafer is effectively reduced.
Drawings
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without creative efforts;
FIG. 1 is a process flow diagram of step S1 in the present invention;
FIG. 2 is a process flow diagram of step S2 of the present invention;
FIG. 3 is a process flow diagram of step S3 in the present invention;
FIG. 4 is a process flow diagram of step S4 in the present invention;
FIG. 5 is a process flow diagram of step S5 in the present invention;
FIG. 6 is a process flow diagram of step S6 in the present invention;
FIG. 7 is a process flow diagram of step S7 in the present invention;
FIG. 8 is a schematic structural diagram of a top portion of the carrier film frame of FIG. 3;
FIG. 9 is a schematic view of the structure of the bottom portion of the carrier film frame of FIG. 8;
fig. 10 is a schematic view of the carrier film frame and the cooling plate of fig. 9 in a state where they are removed.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A low-loss silicon carbide wafer slicing method comprises the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 4cm, cutting the silicon carbide crystal ingot into 31 silicon carbide columns with the thickness of 1000 microns by adopting laser cutting, wherein the cutting frequency is 30 times, and the loss of 300 microns is generated by each time of cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 150 microns and a silicon carbide thick sheet with the thickness of 850 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and forming a bonding layer by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to bond the glass carrier plate to the upper side of the silicon carbide sheet;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, rapidly rotating the glass support plate to the lower part, rapidly cooling the glass support plate from the lower part, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass support plate from the upper part of the glass support plate by using a sucking disc, driving the glass support plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, grinding the section of the silicon carbide slab, grinding the silicon carbide slab to generate a loss of 25 microns, obtaining a silicon carbide sheet with the thickness of 150 microns and a silicon carbide slab with the thickness of 825 microns, and grinding the section of the silicon carbide sheet with the thickness of 150 microns by adopting a QCB (quaternary ammonium chloride) technology to form a silicon carbide sheet with two planes and the thickness of 100 microns;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2 for three times, and separating three silicon carbide slices with the thickness of 100 microns and one silicon carbide slab with the thickness of 300 microns;
s6, performing laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide sheets with the thickness of 150 mu m, and bonding two glass carrier plates on the surfaces of the two silicon carbide sheets through an adhesive;
and S7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide sheets to form two independent silicon carbide sheets with the thickness of 150 microns, and finally grinding the section of the silicon carbide sheet with the thickness of 150 microns obtained in the step S6 to form two silicon carbide sheets with the thickness of 100 microns.
In summary, in example 1, in steps S4, S5 and S7, six silicon carbide wafers with a thickness of 100 μm were obtained, and 186 silicon carbide wafers with a thickness of 100 μm were obtained from 31 silicon carbide wafers with a thickness of 1000 μm.
In the step S3, when the wafer and the glass carrier plate are cooled from below, the cooling plate is used to carry the wafer and the glass carrier plate, the carrier film frame is used to carry the cooling plate, and dry ice is put into the carrier film frame.
As shown in fig. 8, 9 and 10, the cooling plate is connected with a cooling system to realize circulation cooling, the cooling system comprises a pipeline and a condenser, a dry filter, a capillary tube and a compressor which are connected through the pipeline, the pipeline penetrates through the bearing membrane frame, and the part of the pipeline penetrating through the bearing membrane frame is spirally arranged inside the cooling plate.
Example 2
A low-loss silicon carbide wafer slicing method comprises the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 4cm, cutting the silicon carbide crystal ingot into 35 silicon carbide crystal columns with the thickness of 825 mu m by adopting laser cutting, wherein the cutting frequency is 34 times, and the loss of 300 mu m is generated by each cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 150 microns and a silicon carbide thick sheet with the thickness of 675 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and forming a bonding layer by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to bond the glass carrier plate to the upper side of the silicon carbide sheet;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, quickly rotating the glass carrier plate to the lower part, quickly cooling the lower part of the glass carrier plate, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass carrier plate from the upper part of the glass carrier plate by using a sucking disc, driving the glass carrier plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, grinding the section of the silicon carbide slab, grinding the silicon carbide slab to generate 25-micron loss to obtain a silicon carbide sheet with the thickness of 150 microns and a silicon carbide slab with the thickness of 650 microns, and grinding the section of the silicon carbide sheet with the thickness of 150 microns by adopting a QCB (quaternary ammonium chloride) technology to form a silicon carbide sheet with two planes and the thickness of 100 microns;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2 for two times, and separating two silicon carbide thin slices with the thickness of 100 micrometers and one silicon carbide slab with the thickness of 300 micrometers;
s6, performing laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide sheets with the thickness of 150 mu m, and bonding two glass carrier plates on the surfaces of the two silicon carbide sheets through an adhesive;
and S7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide sheets to form two independent silicon carbide sheets with the thickness of 150 microns, and finally grinding the section of the silicon carbide sheet with the thickness of 150 microns obtained in the step S6 to form two silicon carbide sheets with the thickness of 100 microns.
In summary, in example 2, in steps S4, S5 and S7, five silicon carbide wafers with a thickness of 100 μm were obtained and 175 silicon carbide wafers with a thickness of 100 μm were obtained from 35 silicon carbide wafers with a thickness of 1000 μm for each column with a thickness of 825 μm.
Example 3
A low-loss silicon carbide wafer slicing method comprises the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 4cm, cutting the silicon carbide crystal ingot into 24 silicon carbide crystal columns with the thickness of 1375 mu m by adopting laser cutting, wherein the cutting times are 23, and the loss of 300 mu m is generated by each cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 200 microns and a silicon carbide thick sheet with the thickness of 1175 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and forming a bonding layer by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to bond the glass carrier plate to the upper side of the silicon carbide sheet;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, rapidly rotating the glass support plate to the lower part, rapidly cooling the glass support plate from the lower part, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass support plate from the upper part of the glass support plate by using a sucking disc, driving the glass support plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, grinding the section of the silicon carbide slab, grinding the silicon carbide slab to generate 25-micron loss to obtain a silicon carbide sheet with the thickness of 200 microns and a silicon carbide slab with the thickness of 1150 microns, and grinding the section of the silicon carbide sheet with the thickness of 150 microns by adopting a QCB (quartz crystal lattice) technology to form a silicon carbide sheet with two planes and the thickness of 100 microns;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2 for three times, and separating three silicon carbide slices with the thickness of 200 mu m and one silicon carbide slab with the thickness of 475 mu m;
s6, performing laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide thin sheets with the thicknesses of 250 micrometers and 225 micrometers, and bonding two glass carrier plates on the surfaces of the two silicon carbide thin sheets through an adhesive;
and S7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide sheets to form silicon carbide sheets with the thicknesses of 250 mu m and 225 mu m, and finally grinding the cross sections of the silicon carbide sheets with the thicknesses of 250 mu m and 225 mu m obtained in the step S6 to form two silicon carbide sheets with the thicknesses of 100 mu m.
In summary, in example 3, 6 silicon carbide wafers with a thickness of 100 μm and 144 silicon carbide wafers with a thickness of 100 μm can be obtained from 24 silicon carbide wafers with a thickness of 1000 μm in total in steps S4, S5 and S7 for each crystal column with a thickness of 1375 μm.
Example 4
A low-loss silicon carbide wafer slicing method comprises the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 4cm, cutting the silicon carbide crystal ingot into 35 silicon carbide columns with the thickness of 850 mu m by adopting laser cutting, wherein the cutting frequency is 34 times, and the loss of 300 mu m is generated by each cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 200 microns and a silicon carbide thick sheet with the thickness of 650 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and forming a bonding layer by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to bond the glass carrier plate to the upper side of the silicon carbide sheet;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, rapidly rotating the glass support plate to the lower part, rapidly cooling the glass support plate from the lower part, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass support plate from the upper part of the glass support plate by using a sucking disc, driving the glass support plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, grinding the section of the silicon carbide slab, grinding the silicon carbide slab to generate 25-micron loss to obtain a silicon carbide sheet with the thickness of 200 microns and a silicon carbide slab with the thickness of 625 microns, and grinding the section of the silicon carbide sheet with the thickness of 150 microns by adopting a QCB (quaternary ammonium chloride) technology to form a silicon carbide sheet with two planes and the thickness of 100 microns;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2 once, and separating a silicon carbide sheet with the thickness of 100 microns and a silicon carbide slab with the thickness of 400 microns;
s6, carrying out laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide sheets with the thickness of 200 mu m, and bonding two glass carrier plates on the surfaces of the two silicon carbide sheets through an adhesive;
and S7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide sheets to form two silicon carbide sheets with the thickness of 200 microns, and finally grinding the section of the silicon carbide sheet with the thickness of 200 microns obtained in the step S6 to form two silicon carbide sheets with the thickness of 100 microns.
In summary, in example 3, in steps S4, S5 and S7, four silicon carbide wafers with a thickness of 100 μm are obtained, and 140 silicon carbide wafers with a thickness of 100 μm are obtained from 35 silicon carbide wafers with a thickness of 1000 μm.
For the 100 μm silicon carbide wafer sheets prepared in examples 1-4, the data for all examples were normalized based on the data for example 1 for comparison purposes, resulting in table 1 below.
TABLE 1
As can be seen from the above table, in comparative examples 2-4, example 1 provided by the present invention can obtain more silicon carbide wafers, so the method for slicing a silicon carbide wafer with low loss in example 1 of the present invention is a preferred embodiment of the present invention.
Compared with the related art, the low-loss silicon carbide wafer slicing method provided by the invention has the following beneficial effects:
through bonding glass carrying disc on the carborundum thin slice that obtains at the cutting, the carborundum thin slice on the glass carrying plate is peeled off to cooperation sucking disc conveniently, produces the damage to the carborundum thin slice when avoiding peeling off the carborundum thin slice, and when polishing the carborundum thin slice, bears the weight of the carborundum thin slice by the glass carrying plate, makes things convenient for polishing and washing to the carborundum thin slice more.
During slicing, only grinding loss is generated at each time, the loss generated during slicing the silicon carbide is smaller, 6 silicon carbide slices can be separated from each 1000-micrometer silicon carbide column, and compared with the traditional multi-line cutting technology, the multi-line cutting technology can separate more silicon carbide slices, the generated loss is smaller, and the processing cost of the silicon carbide wafer is effectively reduced.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, and such changes and modifications are within the scope of the invention as claimed.
Claims (8)
1. A low-loss silicon carbide wafer slicing method is characterized by comprising the following steps:
s1, taking a silicon carbide crystal ingot with the thickness of 3.5-6cm, and cutting the silicon carbide crystal ingot into silicon carbide columns with the thickness of 825-4000 mu m by adopting laser cutting;
s2, performing laser stealth cutting on the silicon carbide crystal column obtained in the step S1 to form cracks on the silicon carbide, forming a silicon carbide sheet with the thickness of 80-200 microns and a silicon carbide thick sheet with the thickness of 625-3920 microns on the silicon carbide crystal column, coating an adhesive on the silicon carbide sheet, taking a glass carrier plate, coating a silicon oxynitride film on the glass carrier plate to form a release layer, and bonding the glass carrier plate to the upper side of the silicon carbide sheet by matching the release layer on the glass carrier plate and the adhesive on the silicon carbide sheet to form a bonding layer;
s3, heating the lower part of the silicon carbide thick sheet, turning over the silicon carbide thin sheet and the silicon carbide thick sheet after heating, quickly turning over the glass carrier plate to the lower part, quickly cooling the lower part of the glass carrier plate, finally turning over the silicon carbide thin sheet and the silicon carbide thick sheet, adsorbing the glass carrier plate from the upper part of the glass carrier plate by using a sucking disc, driving the glass carrier plate to move upwards, and stripping the silicon carbide thin sheet from the silicon carbide thick sheet;
s4, obtaining a silicon carbide sheet with the thickness of 80-200 mu m and a silicon carbide slab with the thickness of 625-3920 mu m, and grinding and polishing the silicon carbide slab; grinding and polishing the section of the silicon carbide sheet with the thickness of 80-200 mu m to form the silicon carbide sheet with two planes and the thickness of 55-175 mu m;
s5, using the silicon carbide slab obtained in the step S4 as a new silicon carbide crystal column, repeatedly returning to the step S2n times, and separating n silicon carbide slices with the thickness of 80-200 mu m, wherein n is more than or equal to 1 and less than or equal to 38 until the thickness of the silicon carbide slab is 160-500 mu m;
s6, performing laser invisible cutting on the silicon carbide thick sheet obtained in the step S5 to form cracks on the silicon carbide thick sheet, so that the silicon carbide thick sheet forms two silicon carbide sheets with the thickness of 80-200 mu m, and bonding two glass carrier plates on the surfaces of the two silicon carbide sheets through an adhesive;
s7, heating the surface of one of the glass carrier plates, then rapidly cooling, finally adsorbing the upper glass carrier plate by using a sucker, separating the two silicon carbide slices to form two independent silicon carbide slices with the thickness of 80-200 mu m, and finally grinding the cross section of the silicon carbide slice with the thickness of 80-200 mu m obtained in the step S6 to form two silicon carbide slices with the thickness of 55-175 mu m.
2. The method as claimed in claim 1, wherein in step S1, the laser pulses act equidistantly during laser stealth dicing, so that damage is formed equidistantly to form a modified layer in the SiC column, thereby breaking the molecular bonds of the material at the modified layer position and making the SiC column brittle and easy to separate.
3. The method as claimed in claim 1, wherein in step S3, the silicon carbide wafer is heated under the silicon carbide sheet, heated by contact heat conduction with a heating medium, cooled from under the glass support plate, and cooled by contact heat conduction with a cooling medium, and the connection between the silicon carbide sheet and the silicon carbide slab is completely broken after heating and cooling.
4. The method as claimed in claim 3, wherein in the step S3, when cooling the wafer and the glass carrier plate from the lower part of the glass carrier plate, the cooling plate is used to support the wafer and the glass carrier plate, the film frame is used to support the cooling plate, and dry ice is put into the film frame.
5. The method as claimed in claim 1, wherein in step S4, when the cross section of the silicon carbide slab is polished, a loss of 25 μm is generated during polishing.
6. The method as claimed in claim 1, wherein in the steps S4 and S7, the silicon carbide wafer with a thickness of 55-175 μm is subjected to UV photolysis bonding, the glass support plate is removed from the silicon carbide wafer, and then the silicon carbide wafer is cleaned to remove the adhesive, so as to obtain the silicon carbide wafer.
7. The method as claimed in claim 1, wherein in step S6, the bonding process of the two glass carrier plates on the surfaces of the two silicon carbide sheets by the adhesive comprises: firstly coating an adhesive on the surfaces of one of the glass carrier plate and one of the silicon carbide sheets, bonding one surface of the glass carrier plate with the adhesive to one surface of the silicon carbide sheet with the adhesive, turning the glass carrier plate and the silicon carbide sheet, coating the adhesive on the surfaces of the other glass carrier plate and the other silicon carbide sheet, and bonding one surface of the glass carrier plate with the adhesive to one surface of the silicon carbide sheet with the adhesive so as to bond the surfaces of the two silicon carbide sheets with the glass carrier plate.
8. The method as claimed in claim 1, wherein the step S1 is performed by using diamond wire cutting, which causes a loss of 300 μm, and the number of cut SiC wafers is 8-53.
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| CN202210758478.5A Pending CN115338546A (en) | 2022-06-29 | 2022-06-29 | Low-loss silicon carbide wafer slicing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115338546A (en) |
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2022
- 2022-06-29 CN CN202210758478.5A patent/CN115338546A/en active Pending
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