CN115356545B - Novel pixel unit structure for charged particle detection and use method thereof - Google Patents
Novel pixel unit structure for charged particle detection and use method thereof Download PDFInfo
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Abstract
The invention relates to a novel pixel unit structure for charged particle detection and a using method thereof, wherein the pixel unit structure comprises the following components: the charge collecting unit is used for collecting charges and acquiring a signal to be identified; the full NMOS amplifying unit is used for amplifying the received signal to be identified to obtain an amplified signal of the signal to be identified; the energy measurement unit is used for processing the received amplified signal to obtain amplitude information of the charge signal to be identified; and the time measuring unit is used for processing the received amplified signal to obtain the arrival time information of the charge signal to be identified. The invention solves the difficulty of mass production of high-performance single-chip active pixel sensors based on a double-well commercial process, and realizes a multi-dimensional measurement function based on the single-chip active pixel sensors; can be applied in the field of charged particle detection.
Description
Technical Field
The invention relates to the technical field of charged particle detection, in particular to a novel pixel unit structure for charged particle detection and a using method thereof.
Background
Monolithic active pixel sensors are an advanced charged particle detector, and achieve extremely high circuit integration by integrating a charged particle detection unit and signal processing circuitry within each pixel. Monolithic active pixel sensors typically have excellent spatial resolution, energy resolution, and excellent temporal response capability, while they also have lower noise and better radiation resistance for application needs. In recent years, monolithic active pixel sensors have been widely used in various fields such as physical experiments, space detection, medical instruments, material analysis, and environmental detection.
Currently, a single monolithic active pixel sensor chip typically has tens of thousands to millions of pixels, and the area of a single pixel is about several microns. Each pixel point of the monolithic active pixel sensor completes the functions of particle detection and signal processing on the same silicon substrate, and compared with a hybrid pixel sensor which is realized by integrating a detection part and a signal processing part between chips, the monolithic active pixel sensor is firmer and thinner, and simultaneously avoids the complex interface design of a detector and front-end electronics, thereby realizing higher granularity and lower material quality, and greatly reducing the energy loss caused by particle scattering. The pixel array in which the array form is closely arranged and the pixel size of the order of micrometers provide excellent spatial resolution capability. Each pixel cell contains a well-designed charge-collecting diode and its front-end signal amplification readout section. The particles deposit energy when hitting different pixels causing the pixels to fire, thus enabling the two-dimensional position information of the hit to be measured. In recent years, many monolithic active pixel sensors have introduced a function of measuring the incident energy and arrival time of particles based on position measurement.
Monolithic active pixel sensors are typically implemented using complementary Metal-Oxide-Semiconductor (CMOS) processes. The charge collecting unit in each pixel is a P-N junction charge collecting diode composed of an N well and a P type substrate, and the signal processing circuit in the pixel is generally realized by combining NMOS and PMOS. In order to improve the absorption efficiency of the charge collection unit, the monolithic active pixel sensor design generally adopts a four-well process (P-well, N-well, deep P-well, deep N-well), and by introducing the deep P-well, the N-well in the collection diode in the pixel and the N-well of the PMOS in the signal processing circuit can be isolated. Therefore, mutual competition can be avoided, and the collecting efficiency of the collecting diode is greatly improved. But the four-well CMOS process requires a significant increase in chip manufacturing cost. Therefore, a method for developing MAPS based on domestic tape-out technology needs to be explored, and especially, a single-chip active pixel sensor design is realized based on domestic commercial double-well technology (P-well and N-well).
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a novel pixel cell structure for charged particle detection and a method for using the same, which effectively solve the difficulty of mass production of high-performance monolithic active pixel sensors based on a double-well commercial process, and implement a multi-dimensional measurement function based on monolithic active pixel sensors.
In order to realize the purpose, the invention adopts the following technical scheme: a novel pixel cell structure for charged particle detection, comprising: the charge collecting unit is used for collecting charges and acquiring a signal to be identified; the full NMOS amplifying unit is used for amplifying the received signal to be identified to obtain an amplified signal of the signal to be identified; the energy measurement unit is used for processing the received amplified signal to obtain amplitude information of the charge signal to be identified; and the time measuring unit is used for processing the received amplified signal to obtain the arrival time information of the charge signal to be identified.
Further, the charge collection unit employs a charge collection diode.
Further, the full NMOS amplifying unit comprises a full NMOS common source amplifier, a current limiting switch, an additional load bias, a self-adaptive feedback reset circuit and a baseline adjusting circuit;
the input end of the all-NMOS common-source amplifier is connected with the output end of the charge collecting unit, and the output end of the all-NMOS common-source amplifier is connected with the input ends of the energy measuring unit and the time measuring unit after passing through the baseline adjusting circuit;
the forward power supply end of the all-NMOS common-source amplifier is connected with the current-limiting switch and the additional load bias in parallel;
the negative power supply end of the all-NMOS common-source amplifier is grounded after passing through the other current-limiting switch;
the self-adaptive feedback reset circuit is connected in parallel between the input end and the output end of the all-NMOS common-source amplifier.
Further, the energy measuring unit includes:
the full NMOS common source amplifying circuit is used for isolating the received amplified signal output by the full NMOS amplifying unit from a subsequent signal;
the full NMOS peak value holding circuit is used for holding the peak value of the amplified signal output by the full NMOS common source amplifying circuit;
and the all-NMOS source follower is used for reading out the holding signal output by the all-NMOS common-source amplifying circuit to obtain the amplitude information of the charge signal to be identified.
Further, the time measuring unit includes:
the threshold value reverse quantization full NMOS digital comparator is used for identifying the received amplified signal output by the full NMOS amplifying unit to obtain peak reaching time information;
the full NMOS latch is used for latching the time information;
the full NMOS time-amplitude converter is used for carrying out time-amplitude conversion on the latching signal to obtain amplitude information of the time signal;
and the full NMOS source follower is used for reading out the amplitude information of the time signal output by the full NMOS time-amplitude converter to obtain the arrival time information of the charge signal to be identified.
Further, the threshold reverse quantization full NMOS digital comparator is formed by serially connecting two stages of inverters with load bias.
A method for using a novel pixel unit structure for charged particle detection is realized based on the novel pixel unit structure for charged particle detection, and comprises the following steps: acquiring a charge signal to be identified through a charge collecting unit; inputting the charge signal to be identified into a full NMOS amplification unit for amplification processing to obtain an amplified signal of the charge signal to be identified; inputting the amplified signal into an energy measuring unit to obtain amplitude information of the charge signal to be identified; and inputting the amplified signal to a time measuring unit to obtain the arrival time information of the charge signal to be identified.
Furthermore, the charge collection unit collects charge signals of charged particles incident to the pixel unit through the charge collection diode by adopting the charge collection diode, and then obtains the charge signals to be identified.
Further, the inputting the amplified signal to an energy measurement unit to obtain amplitude information of the charge signal to be identified includes:
isolating the received amplified signal output by the full NMOS amplifying unit from a subsequent signal through the full NMOS common-source amplifying circuit;
the peak value of an amplified signal output by the all-NMOS common-source amplifying circuit is kept through the all-NMOS peak value keeping circuit;
and reading out the holding signal output by the all-NMOS common-source amplifying circuit through the all-NMOS source follower to obtain the amplitude information of the charge signal to be identified.
Further, the inputting the amplified signal to the time measurement unit to obtain the arrival time information of the charge signal to be identified includes:
identifying the received amplified signal output by the full NMOS amplifying unit through a threshold value reverse quantization full NMOS digital comparator to obtain peak reaching time information;
latching the time information through a full NMOS latch;
performing time-amplitude conversion on the latch signal through a full NMOS time-amplitude converter to obtain amplitude information of the time signal;
and reading the amplitude information of the time signal output by the all-NMOS time-amplitude converter through the all-NMOS source follower to obtain the arrival time information of the charge signal to be identified.
Due to the adoption of the technical scheme, the invention has the following advantages:
the invention aims to provide a novel pixel unit structure for charged particle detection and a using method thereof, wherein the circuit design is realized by adopting NMOS only, the competition of N-well and N-well in a collecting diode caused by PMOS can be avoided, and the novel pixel unit structure has the functions of simultaneously measuring the hitting position, deposition energy and reaching time of charged particles. The method can effectively solve the difficulty of mass production of the high-performance single-chip active pixel sensor based on the double-well commercial process, realize the multi-dimensional measurement function based on the single-chip active pixel sensor, and solve the key technical problem of the high-performance single-chip active pixel sensor.
Drawings
FIG. 1 is a schematic diagram of a novel pixel cell structure for charged particle detection according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a full NMOS amplifying unit in a pixel unit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an energy measurement unit in a pixel unit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a time measurement unit in a pixel unit according to an embodiment of the present invention;
fig. 5 is a schematic signal processing flow diagram of a pixel unit circuit for charge signal processing according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The invention provides a novel pixel unit structure for charged particle detection and a using method thereof. The charge collecting diode is used for collecting the energy of charged particle deposition incident to the pixel unit; the full NMOS amplifying unit is used for amplifying the charge signals collected by the diode; the full NMOS energy measuring circuit is used for acquiring amplitude information of a charged particle deposition charge signal; the full NMOS time measuring circuit is used for acquiring time information of particle incidence. The amplifying unit, the energy measuring unit and the time measuring unit which are realized based on the full NMOS avoid an N well required by the PMOS, and further avoid competition between the N well of the PMOS and an N well of the charge collecting diode in the process of depositing and absorbing energy of charged particles. The pixel cell can be implemented using a commercial dual-well CMOS process, independent of the expensive four-well CMOS process.
In one embodiment of the present invention, a novel pixel cell structure for charged particle detection is provided. In this embodiment, the pixel unit can measure the hitting position, deposition energy and incident time of the charged particle, as shown in fig. 1, the novel pixel unit structure includes:
the charge collecting unit is used for collecting charges and acquiring a signal to be identified;
the full NMOS amplifying unit is used for amplifying the received signal to be identified to obtain an amplified signal of the signal to be identified;
the energy measurement unit is used for processing the received amplified signal to obtain amplitude information of the charge signal to be identified;
and the time measuring unit is used for processing the received amplified signal to obtain the arrival time information of the charge signal to be identified.
In the above embodiment, the charge collection unit employs a charge collection diode, and an octagonal diode is preferred in this embodiment.
In the foregoing embodiment, as shown in fig. 2, the full NMOS amplifying unit adopts a full NMOS structure, and includes a full NMOS common-source amplifier, a current-limiting switch, an additional load bias, an adaptive feedback reset circuit, and a baseline adjusting circuit. The input end of the all-NMOS common-source amplifier is connected with the output end of the charge collecting unit, and the output end of the all-NMOS common-source amplifier is connected with the input ends of the energy measuring unit and the time measuring unit after passing through the baseline adjusting circuit. The positive power supply end of the all-NMOS common-source amplifier is connected with a current-limiting switch and an extra load bias in parallel, and the negative power supply end of the all-NMOS common-source amplifier is grounded after passing through the other current-limiting switch. A self-adaptive feedback reset circuit is connected in parallel between the input end and the output end of the all-NMOS common-source amplifier, and a direct-current working level does not need to be additionally provided through the self-adaptive feedback reset circuit.
When the full NMOS common source amplifier is used, a signal to be identified is input into the full NMOS common source amplifier for amplification, the high-frequency gain of the full NMOS common source amplifier can be greatly improved through additional load bias, and the power consumption of the full NMOS common source amplifier can be conveniently controlled through the current limiting switch. The output end is connected with the baseline adjusting circuit, and the baseline value of the amplified signal can be adjusted to facilitate subsequent processing.
In the above embodiment, as shown in fig. 3, the energy measurement unit has an all-NMOS structure, and specifically, the energy measurement unit includes an all-NMOS common-source amplification circuit, an all-NMOS peak-hold circuit, and an all-NMOS source follower. The input end of the full NMOS peak value holding circuit is connected with the output end of the full NMOS common-source amplifying circuit, and the input end of the full NMOS common-source amplifying circuit is connected with the output end of the full NMOS common-source amplifier in the full NMOS amplifying unit; and the output end of the full NMOS peak value holding circuit is connected with the full NMOS source follower and then used as the output end of the energy measuring unit.
The all-NMOS common-source amplifying circuit is used for isolating the received amplified signal from a subsequent signal;
the full NMOS peak value holding circuit is used for holding the peak value of the amplified signal output by the full NMOS common source amplifying circuit;
and the all-NMOS source follower is used for reading out the holding signal output by the all-NMOS common-source amplifying circuit to obtain the amplitude information of the charge signal to be identified.
In the present embodiment, the amplification factor of the all-NMOS common-source amplification circuit is close to 1. The all-NMOS common-source amplifying circuit with the amplification factor close to 1 is connected in front and used as isolation, so that interference on the all-NMOS common-source amplifier in the front-stage all-NMOS amplifying unit is avoided.
In the above embodiment, as shown in fig. 4, the time measurement unit adopts a full NMOS structure, and includes a threshold inverse quantization full NMOS digital comparator, a full NMOS latch, a full NMOS time-amplitude converter, and a full NMOS source follower. The threshold value reverse quantization full NMOS digital comparator has strong anti-jamming capability, the input end of the threshold value reverse quantization full NMOS digital comparator is connected with the output end of the full NMOS common-source amplifier in the full NMOS amplifying unit, the output end of the threshold value reverse quantization full NMOS digital comparator is connected with the input end of the full NMOS time-amplitude converter through the full NMOS latch, and the digital comparison result is latched through the full NMOS latch so as to be conveniently used for time-amplitude conversion of the full NMOS time-amplitude converter subsequently; the output end of the full NMOS time-amplitude converter is connected with the input end of the full NMOS source follower, and the output end of the full NMOS source follower is used as the output end of the time measuring unit.
The threshold value reverse quantization full NMOS digital comparator is used for identifying the received amplified signal output by the full NMOS amplifying unit to obtain peak reaching time information;
the full NMOS latch is used for latching the time information;
the full NMOS time-amplitude converter is used for carrying out time-amplitude conversion on the latching signal to obtain amplitude information of the time signal;
and the full NMOS source follower is used for reading the amplitude information of the time signal output by the full NMOS time-amplitude converter to obtain the arrival time information of the charge signal to be identified.
In the embodiment, the threshold value inverse quantization full NMOS digital comparator is formed by connecting two stages of inverters with load bias in series.
When the all-NMOS time delay circuit is used, the amplified signal obtains peak reaching time information through the all-NMOS digital comparator, and a latch signal of the time information is obtained through the all-NMOS latch; latching the signal as the switching signal of the all NMOS peak value holding circuit to hold the peak value of the amplified signal, and obtaining the peak value holding signal of the amplitude information; latching the signal and performing time-amplitude conversion as a switching signal of the all-NMOS time-amplitude converter to obtain amplitude information of the time signal; and reading the amplitude keeping signal and the time amplitude signal by the full NMOS source follower to obtain the amplitude and arrival time information of the charge signal to be identified.
In one embodiment of the present invention, a method for using a novel pixel cell structure for charged particle detection is provided, and the method is implemented based on the novel pixel cell structure in the above embodiments. In this embodiment, as shown in fig. 5, the using method includes the following steps:
s101, acquiring a charge signal to be identified through a charge collection unit;
s102, inputting the charge signal to be identified to a full NMOS amplification unit for amplification processing to obtain an amplification signal of the charge signal to be identified;
s103, inputting the amplified signal to an energy measurement unit to obtain amplitude information of the charge signal to be identified;
and S104, inputting the amplified signal to a time measuring unit to obtain the arrival time information of the charge signal to be identified.
In step S101, the charge collection unit collects the charge signal of the charged particles incident to the pixel unit by using the charge collection diode, and further obtains the charge signal to be identified.
In the step S103, inputting the amplified signal to the energy measurement unit to obtain the amplitude information of the charge signal to be identified, the method includes the following steps:
s1031, isolating the received amplified signal output by the full NMOS amplifying unit from a subsequent signal through the full NMOS common source amplifying circuit;
s1032, the peak value of the amplified signal output by the all-NMOS common-source amplifying circuit is kept through the all-NMOS peak value keeping circuit;
and S1033, reading out the holding signal output by the full NMOS common source amplifying circuit through the full NMOS source follower to obtain amplitude information of the charge signal to be identified.
In the step S104, inputting the amplified signal to the time measuring unit to obtain the arrival time information of the charge signal to be identified, the method includes the following steps:
s1041, identifying the received amplified signal output by the full NMOS amplifying unit through a threshold value reverse quantization full NMOS digital comparator to obtain peak reaching time information;
s1042, latching the time information through a full NMOS latch;
s1043, performing time-amplitude conversion on the latch signal through a full NMOS time-amplitude converter to obtain amplitude information of the time signal;
and S1044, reading out the amplitude information of the time signal output by the all-NMOS time-amplitude converter through the all-NMOS source follower to obtain the arrival time information of the charge signal to be identified.
The method provided by this embodiment is implemented based on the above embodiments of the novel pixel unit structure, and for concrete implementation methods and details, reference is made to the above embodiments, which are not described herein again.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A novel pixel cell structure for charged particle detection, comprising:
the charge collection unit is used for collecting charges and acquiring a signal to be identified;
the full NMOS amplifying unit is used for amplifying the received signal to be identified to obtain an amplified signal of the signal to be identified;
the energy measurement unit is used for processing the received amplified signal to obtain amplitude information of the charge signal to be identified;
the time measuring unit is used for processing the received amplified signal to obtain the arrival time information of the charge signal to be identified;
the full NMOS amplifying unit comprises a full NMOS common source amplifier, a current limiting switch, an extra load bias, a self-adaptive feedback reset circuit and a baseline adjusting circuit;
the input end of the full NMOS common source amplifier is connected with the output end of the charge collecting unit, and the output end of the full NMOS common source amplifier is connected with the input ends of the energy measuring unit and the time measuring unit after passing through the baseline adjusting circuit;
the forward power supply end of the all-NMOS common-source amplifier is connected with the current-limiting switch and the additional load bias in parallel;
the negative power supply end of the all-NMOS common-source amplifier is grounded after passing through the other current-limiting switch;
the self-adaptive feedback reset circuit is connected in parallel between the input end and the output end of the all-NMOS common-source amplifier.
2. The novel pixel cell structure for charged particle detection as claimed in claim 1, wherein said charge collection element employs a charge collection diode.
3. A novel pixel cell structure for charged particle detection as claimed in claim 1 wherein said energy measurement cell comprises:
the full NMOS common source amplifying circuit is used for isolating the received amplified signal output by the full NMOS amplifying unit from a subsequent signal;
the full NMOS peak value holding circuit is used for holding the peak value of the amplified signal output by the full NMOS common source amplifying circuit;
and the all-NMOS source follower is used for reading out the holding signal output by the all-NMOS common-source amplifying circuit to obtain the amplitude information of the charge signal to be identified.
4. A novel pixel cell structure for charged particle detection as claimed in claim 1 wherein said time measurement unit comprises:
the threshold value reverse quantization full NMOS digital comparator is used for identifying the received amplified signal output by the full NMOS amplifying unit to obtain peak reaching time information;
the full NMOS latch is used for latching the time information;
the full NMOS time-amplitude converter is used for carrying out time-amplitude conversion on the latching signal to obtain amplitude information of the time signal;
and the full NMOS source follower is used for reading out the amplitude information of the time signal output by the full NMOS time-amplitude converter to obtain the arrival time information of the charge signal to be identified.
5. The novel pixel cell structure for charged particle detection as claimed in claim 4 wherein said threshold inverse quantization all NMOS digital comparator is constructed using two stages of inverters in series with load bias.
6. A method for using a novel pixel cell structure for charged particle detection, the method being implemented based on the novel pixel cell structure for charged particle detection according to any one of claims 1 to 5, comprising:
acquiring a charge signal to be identified through a charge collecting unit;
inputting the charge signal to be identified into a full NMOS amplification unit for amplification processing to obtain an amplified signal of the charge signal to be identified;
inputting the amplified signal into an energy measuring unit to obtain amplitude information of the charge signal to be identified;
and inputting the amplified signal to a time measuring unit to obtain the arrival time information of the charge signal to be identified.
7. The method as claimed in claim 6, wherein the charge collecting unit employs a charge collecting diode, and the charge collecting diode collects charge signals of charged particles incident on the pixel unit, so as to obtain the charge signals to be identified.
8. The method as claimed in claim 6, wherein the inputting of the amplified signal to the energy measurement unit to obtain the amplitude information of the charge signal to be identified comprises:
isolating the received amplified signal output by the full NMOS amplifying unit from a subsequent signal through the full NMOS common-source amplifying circuit;
the peak value of an amplified signal output by the all-NMOS common-source amplifying circuit is kept through the all-NMOS peak value keeping circuit;
and reading out the holding signal output by the all-NMOS common-source amplifying circuit through the all-NMOS source follower to obtain the amplitude information of the charge signal to be identified.
9. The method as claimed in claim 6, wherein the inputting of the amplified signal to the time measurement unit to obtain the arrival time information of the charge signal to be identified comprises:
identifying the received amplified signal output by the full NMOS amplifying unit through a threshold value reverse quantization full NMOS digital comparator to obtain peak reaching time information;
latching the time information through a full NMOS latch;
performing time-amplitude conversion on the latch signal through a full NMOS time-amplitude converter to obtain amplitude information of the time signal;
and reading the amplitude information of the time signal output by the all-NMOS time-amplitude converter through the all-NMOS source follower to obtain the arrival time information of the charge signal to be identified.
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