CN210692568U - Radiation detection probe and chip - Google Patents
Radiation detection probe and chip Download PDFInfo
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- CN210692568U CN210692568U CN201922285736.9U CN201922285736U CN210692568U CN 210692568 U CN210692568 U CN 210692568U CN 201922285736 U CN201922285736 U CN 201922285736U CN 210692568 U CN210692568 U CN 210692568U
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Abstract
The utility model relates to a radiation detection probe and chip, when the dose rate is less than or equal to the dose limit value, acquire the detecting signal of radiation detection probe through the pulse mode circuit, its output pulse number is the same with the X/gamma photon number that detecting signal corresponds, calculate through the external processor and obtain the detecting result; and when the dose rate is greater than the dose limit value, the count rate exceeds the upper limit of the pulse mode circuit, and at the moment, a current mode circuit is adopted to convert the measured current into voltage, and the detection result is calculated by an external processor. Based on the method, the radiation detection device is realized to be a chip, and meanwhile, the wide-range detection of the radiation detection chip on the X/gamma radiation is realized through the cooperative work of the pulse reading mode and the current reading mode.
Description
Technical Field
The utility model relates to a radiation detection technology field especially relates to a radiation detection probe and chip.
Background
Radiation detection is a technical means of observing microscopic phenomena of a specific object through a radiation detector. The radiation detector is a core device for radiation detection, and the principle of interaction between particles and substances is mainly utilized to represent microscopic phenomena of nuclear radiation and particles into observable macroscopic phenomena. Conventional radiation detectors are mainly classified into gas ionization detectors, semiconductor detectors and scintillation detectors.
At present, with the development of various fields such as nuclear physics, experimental physics and the like, higher and higher requirements are also made on the performance requirements of radiation detectors. The traditional radiation detector has larger volume and weight due to the technical limitation of a radiation detection probe, and is difficult to meet the application requirements of various fields.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a radiation detection probe and a chip for overcoming the defects that the conventional radiation detector has a large volume and weight due to the technical limitation of the radiation detection probe and is difficult to meet the application requirements of various fields.
A radiation detecting probe comprising a first electrode, a second electrode and a cadmium zinc telluride crystal prepared by the method of preparing a radiation detecting probe according to any one of the embodiments;
the first electrode is arranged on one side of the cadmium zinc telluride crystal and is used for being connected with a bias voltage; the second electrode is arranged on one side of the cadmium zinc telluride crystal and is used for grounding.
The tellurium-zinc-cadmium crystal prepared by the preparation method of the radiation detection probe is matched with the first electrode and the second electrode, so that the volume and the performance of the formed radiation detection probe are balanced, the volume of the radiation detection probe is favorably controlled, and the radiation detection probe is convenient to apply in various fields.
In one embodiment, the first electrode and the second electrode are both metal electrodes.
In one embodiment, the cadmium zinc telluride crystal comprises one or more planar structures or grid structures.
A radiation detection chip comprising a chip housing, and disposed within the chip housing a pulse mode circuit, a current mode circuit and a radiation detection probe as in any of the above embodiments;
the pulse mode circuit comprises a pre-amplification unit and a secondary main amplification unit; the input end of the preamplification unit is used for acquiring a detection signal of the radiation detection probe when the dosage rate of the radiation detection probe is less than or equal to a dosage limit value; the output end of the pre-amplification unit is used for being connected with an external processor through the secondary main amplification unit;
wherein the current mode circuit includes the current measurement unit and the current conversion unit; the input end of the current measuring unit is used for acquiring a detection signal of the radiation detection probe when the dose rate of the radiation detection probe is larger than a dose limit value, and the output end of the current measuring unit is used for being connected with an external processor through the current conversion unit.
When the dose rate of the radiation detection chip is less than or equal to the dose limit value, a detection signal of a radiation detection probe is obtained through a pulse mode circuit, the output pulse number of the radiation detection chip is the same as the number of X/gamma photons corresponding to the detection signal, and an external processor calculates to obtain a detection result; and when the dose rate is greater than the dose limit value, the count rate exceeds the upper limit of the pulse mode circuit, and at the moment, a current mode circuit is adopted to convert the measured current into voltage, and the detection result is calculated by an external processor. Based on the method, the radiation detection device is realized to be a chip, and meanwhile, the wide-range detection of the radiation detection chip on the X/gamma radiation is realized through the cooperative work of the pulse reading mode and the current reading mode.
In one embodiment, the pulse mode circuit further comprises an amplitude screening unit and a monostable trigger unit;
the output end of the preamplification unit is used for being connected with an external processor through the secondary main amplification unit, the amplitude screening unit and the monostable trigger unit in sequence.
In one embodiment, the chip further comprises a built-in processor arranged in the chip shell;
the output end of the pre-amplification unit is connected with the built-in processor through the secondary main amplification unit; the output end of the current measuring unit is connected with the built-in processor through the current conversion unit.
In one embodiment, the pre-amplification unit comprises a charge sensitive amplifier and the secondary main amplification unit comprises a shaping filter circuit.
In one embodiment, the amplitude screening unit comprises a discriminator or a first analog-to-digital conversion circuit, and the monostable trigger unit comprises a monostable trigger circuit.
In one embodiment, the current measuring unit comprises a transimpedance amplifier or a current sampling circuit; the current conversion unit can be selected from the second analog-to-digital conversion circuit.
In one embodiment, the device further comprises a boosting module;
the boosting module is used for accessing chip-level voltage, boosting the chip-level voltage and providing bias voltage for the radiation detection probe by the boosted chip-level voltage.
In one embodiment, the chip housing includes an electromagnetic shielding box.
Drawings
FIG. 1 is a schematic diagram of a radiation detection probe according to an embodiment;
FIG. 2 is a schematic diagram of a radiation detection chip circuit module according to an embodiment;
FIG. 3 is a circuit diagram of a pulse mode according to an embodiment;
FIG. 4 is a circuit diagram of a preamplifier unit design according to an embodiment;
FIG. 5 is a circuit diagram of a secondary main amplifying unit according to an embodiment;
fig. 6 is a schematic structural diagram of a radiation detection chip circuit module according to another embodiment.
Detailed Description
For better understanding of the objects, technical solutions and technical effects of the present invention, the present invention will be further explained with reference to the accompanying drawings and embodiments. It is to be noted that the following examples are only for explaining the present invention and are not intended to limit the present invention.
An embodiment of the utility model provides a radiation detection probe.
Fig. 1 is a schematic structural view of a radiation detecting probe according to an embodiment, as shown in fig. 1, the radiation detecting probe according to an embodiment includes a first electrode 100, a second electrode 101, and a cadmium zinc telluride crystal 102 prepared by the method for preparing a radiation detecting probe according to any one of the above embodiments;
the first electrode 100 is arranged on one side of the cadmium zinc telluride crystal 102 and is used for switching in a bias voltage; the second electrode 101 is disposed on the cadmium zinc telluride crystal 102 side and is used for grounding.
The first electrode 100 and the second electrode 101 are used to form a bias voltage for the cadmium zinc telluride crystal 102. The cadmium zinc telluride crystal 102 is used for detecting high-energy particles, especially gamma rays. Energetic particles, which are charged particles, interact with electrons of the cadmium zinc telluride crystal 102 within the PN junction, quickly losing energy and forming electron-hole pairs. Under the action of the PN junction electric field, the electrons and the holes drift toward the two poles, respectively, and thus a detection signal is formed in an output loop between the first electrode 100 and the second electrode 101.
In one embodiment, the first electrode 100 and the second electrode 101 are both metal electrodes.
In one embodiment, the first electrode 100 is a thin sheet-like electrode and is disposed on the surface of the cadmium zinc telluride crystal 102. Wherein, the surface of the tellurium-zinc-cadmium crystal 102 is used for detecting high-energy particles.
In one embodiment, the second electrode 101 is a thin sheet-like electrode and is disposed on the back side of the cadmium zinc telluride crystal 102.
In one embodiment, the first electrode 100 and the second electrode 101 are metal electrodes with PIN structures, and the first electrode 100 and the second electrode 101 can be connected to the cadmium zinc telluride crystal 102 by gold wire bonding, tape bonding, flip chip bonding, or the like. Through the metal electrode of the PIN structure and the tellurium-zinc-cadmium crystal 102, the chip of the radiation detection probe is convenient.
In one embodiment, the radiation detection probe includes one or more cadmium zinc telluride crystals 102. One cadmium zinc telluride crystal 102 can be in a planar structure or a gate structure. The plurality of cadmium zinc telluride crystals 102 can be arranged in an array. It should be understood that the type of structure of the cadmium zinc telluride crystal 102 in the radiation detection probe given in this embodiment includes, but is not limited to, this.
In one embodiment, the three-dimensional size of the cadmium zinc telluride crystal 102 is 10X 1mm3。
The radiation detection probe of any of the embodiments, the cadmium zinc telluride crystal 102 prepared by the preparation method of the radiation detection probe is matched with the first electrode 100 and the second electrode 101, so that the volume and the performance of the radiation detection probe formed by the radiation detection probe are balanced, the volume of the radiation detection probe is favorably controlled, and the radiation detection probe is convenient to apply in various fields.
The embodiment of the utility model provides a still provide a radiation detection chip.
Fig. 2 is a schematic structural diagram of a radiation detection chip circuit module according to an embodiment, and as shown in fig. 2, the radiation detection chip according to an embodiment includes a chip housing 200, and a pulse mode circuit 201, a current mode circuit 202, and a radiation detection probe 203 according to any one of the above embodiments, which are disposed in the chip housing 200;
wherein the pulse mode circuit 201 comprises a pre-amplification unit 300 and a secondary main amplification unit 301; the input end of the preamplification unit 300 is configured to obtain a detection signal of the radiation detection probe 203 when the dose rate of the radiation detection probe 203 is less than or equal to a dose limit value; the output end of the pre-amplification unit 300 is used for connecting an external processor through the secondary main amplification unit 301;
wherein the current mode circuit 202 comprises the current measurement unit 400 and the current conversion unit 401; the input end of the current measuring unit 400 is configured to obtain a detection signal of the radiation detecting probe 203 when the dose rate of the radiation detecting probe 203 is greater than a dose limit value, and the output end of the current measuring unit 400 is configured to be connected to an external processor through the current converting unit 401.
The electric signal of the detection signal is positively correlated with the dose rate, and the dose rate comprises a current value or a charge value. The dose limiting value comprises a preset current value or a preset charge value. In one embodiment, the detection signal directly output by the radiation detection probe 203 is an ionizing charge signal, the detection signal is not subject to avalanche amplification, and the charge of the detection signal is typically in the order of 0.1fC to 100fC, which is proportional to the ionizing radiation deposition energy. When the dose rate is less than or equal to the dose limit value, acquiring a detection signal of the radiation detection probe 203 through the pulse mode circuit 201, wherein the output pulse number of the detection signal is the same as the number of X/gamma photons corresponding to the detection signal, and calculating by an external processor to obtain a detection result; when the dose rate is greater than the dose limit value and exceeds the upper limit of the counting rate of the pulse mode circuit 201, the current mode circuit 202 is adopted to convert the measured current into voltage, and the detection result is calculated by an external processor. Based on the method, the radiation detection device is realized to be a chip, and meanwhile, the wide-range detection of the radiation detection chip on the X/gamma radiation is realized through the cooperative work of the pulse reading mode and the current reading mode.
In one embodiment, the pulse mode circuit 201 can be implemented by a discrete device combination circuit such as JFET and transistor, a combination circuit such as JFET and operational amplifier, or an application specific integrated circuit based on CMOS process. As a preferred embodiment, the pulse mode circuit 201 is an application specific integrated circuit based on CMOS process. Fig. 3 is a diagram of a pulse mode circuit 201 according to an embodiment, as shown in fig. 3, in an asic based on CMOS process, a pre-amplifier unit 300 includes a charge sensitive amplifier 500. The charge sensitive amplifier 500 is used to convert a charge signal into a voltage signal as a first stage amplification, and its noise performance and frequency characteristic have the greatest influence on the circuit characteristics. The secondary primary amplification unit 301 includes a shaping filter circuit 501. As a preferred embodiment, the shaping filter circuit 501 may select a band-pass filter for filtering out signals of irrelevant frequency bands, so as to improve the signal-to-noise ratio of the output signal. In one embodiment, the amplitude discrimination unit 302 includes a comparator 502, and the digital signal is output through the comparator 502.
As a preferred embodiment, in order to obtain low noise, low power consumption, proper gain bandwidth, etc., a proper process may be selected in the circuit diagram design stage according to theoretical calculation and simulation results, and parameters such as the aspect ratio of each transistor may be adjusted step by step. Because it is difficult to realize high resistance value resistance in the integrated circuit, the charge accumulated on each feedback capacitance in the special integrated circuit based on CMOS technology can be discharged by designing the discharge circuit.
In one embodiment, fig. 4 is a circuit diagram of a preamplifier unit design according to an embodiment, and as shown in fig. 4, the preamplifier unit 300 according to an embodiment has the beneficial effects of obtaining low noise, low power consumption, and appropriate gain bandwidth.
In one embodiment, fig. 5 is a circuit diagram of an embodiment of a secondary main amplifying unit, and as shown in fig. 5, the secondary main amplifying unit 301 of an embodiment can effectively improve a signal-to-noise ratio of an output signal of the secondary main amplifying unit 301.
In one embodiment, fig. 6 is a schematic structural diagram of a circuit module of a radiation detection chip according to another embodiment, and as shown in fig. 6, the pulse mode circuit 201 further includes an amplitude discrimination unit 302 and a monostable trigger unit 303;
the output end of the pre-amplification unit 300 is used for being connected with an external processor sequentially through the secondary main amplification unit 301, the amplitude screening unit 302 and the monostable trigger unit 303.
In one embodiment, as shown in FIG. 6, the radiation detection chip further includes a built-in processor 204 disposed within the chip housing 200;
the output end of the pre-amplification unit 300 is connected with the built-in processor through the secondary main amplification unit 301; the output end of the current measuring unit 400 is connected to the built-in processor 204 through the current converting unit 401.
The radiation detection chip can also replace an external processor through the built-in processor 204, so that the detection result of the radiation detection chip can be self-calculated, and the universality of the radiation detection chip is improved.
In one embodiment, the amplitude screening unit 302 may select a discriminator or a first analog-to-digital conversion circuit, and a voltage comparison circuit is configured after the discriminator or the first analog-to-digital conversion circuit to output the LVCMOS digital signal to the monostable trigger unit 303.
In one embodiment, the monostable 303 can be implemented as a monostable circuit. The monostable trigger unit 303 receives the digital signal output by the amplitude discrimination unit 302, converts the digital signal output by the amplitude discrimination unit 302 into a pulse signal, and sends the pulse signal to an external or built-in processor, so that the external or built-in processor can calculate the radiation detection result through the pulse signal.
In one embodiment, the current measurement unit 400 may be a transimpedance amplifier or a current sampling circuit, and is configured to convert the current signal in the radiation detection probe 203 into a voltage output, and as a preferred embodiment, a filter circuit is further configured at a subsequent stage of the current measurement unit 400 to filter high-frequency noise in the voltage output of the current measurement unit 400.
In one embodiment, the current conversion unit 401 may optionally include a second analog-to-digital conversion circuit for converting the voltage output of the current measurement unit 400 into a digital signal, so that an external or internal processor may calculate the radiation detection result from the digital signal.
In one embodiment, as shown in fig. 6, the radiation detection chip of another embodiment further includes a voltage boosting module 600;
the boosting module 600 is used for accessing the chip-level voltage, boosting the chip-level voltage, and providing a bias voltage for the radiation detecting probe 203 with the boosted chip-level voltage.
In one embodiment, the boost module 600 may use a transformer coil or a boost chip. As a preferred embodiment, the boost module 600 is a boost chip.
In one embodiment, the chip housing 200 is an electromagnetic shielding box, and the circuits disposed in the chip housing 200 are distributed to improve the electromagnetic compatibility.
As a preferred embodiment, a chip substrate is disposed in the chip housing 200, the pulse mode circuit 201, the current mode circuit 202, the built-in processor 204 and the radiation detection probe 203 are all fixed on the chip substrate, and the electrical connection among the pulse mode circuit 201, the current mode circuit 202, the processor and the radiation detection probe 203 is realized by gold wire bonding or flip chip bonding.
In one embodiment, the radiation detection chip is further packaged by a plastic package or a ceramic package.
In one embodiment, the built-in processor 204 is a single chip or a DSP processor.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A radiation detection probe is characterized by comprising a first electrode, a second electrode and a cadmium zinc telluride crystal;
the first electrode is arranged on one side of the cadmium zinc telluride crystal and is used for being connected with a bias voltage; the second electrode is arranged on one side of the cadmium zinc telluride crystal and is used for grounding.
2. A radiation detection probe according to claim 1, comprising one or more cadmium zinc telluride crystals in either planar or grid configuration.
3. A radiation detection chip comprising a chip housing, and disposed within the chip housing a pulse mode circuit, a current mode circuit, and a radiation detection probe according to claim 1 or 2;
the pulse mode circuit comprises a pre-amplification unit and a secondary main amplification unit; the input end of the preamplification unit is used for acquiring a detection signal of the radiation detection probe when the dosage rate of the radiation detection probe is less than or equal to a dosage limit value; the output end of the pre-amplification unit is used for being connected with an external processor through the secondary main amplification unit;
wherein the current mode circuit includes the current measurement unit and the current conversion unit; the input end of the current measuring unit is used for acquiring a detection signal of the radiation detection probe when the dose rate of the radiation detection probe is larger than a dose limit value, and the output end of the current measuring unit is used for being connected with an external processor through the current conversion unit.
4. The radiation detection chip of claim 3, wherein the pulse mode circuit further comprises an amplitude discrimination unit and a monostable trigger unit;
the output end of the preamplification unit is used for being connected with an external processor through the secondary main amplification unit, the amplitude screening unit and the monostable trigger unit in sequence.
5. The radiation detection chip of claim 3, further comprising a built-in processor disposed within the chip housing;
the output end of the pre-amplification unit is connected with the built-in processor through the secondary main amplification unit; the output end of the current measuring unit is connected with the built-in processor through the current conversion unit.
6. The radiation detection chip of claim 3, wherein the pre-amplification unit comprises a charge sensitive amplifier and the secondary main amplification unit comprises a shaping filter circuit.
7. The radiation detection chip of claim 4, wherein the amplitude discrimination unit comprises a discriminator or a first analog-to-digital conversion circuit, and the monostable trigger unit comprises a monostable trigger circuit.
8. The radiation detection chip of claim 3, wherein the current measurement unit comprises a transimpedance amplifier or a current sampling circuit; the current conversion unit can be a second analog-to-digital conversion circuit.
9. The radiation detection chip of any one of claims 3 to 8, further comprising a boost module;
the boosting module is used for accessing chip-level voltage, boosting the chip-level voltage and providing bias voltage for the radiation detection probe by the boosted chip-level voltage.
10. The radiation detection chip of any one of claims 3 to 8, wherein the chip housing comprises an electromagnetic shielding box.
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| CN201922285736.9U CN210692568U (en) | 2019-12-18 | 2019-12-18 | Radiation detection probe and chip |
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| CN201922285736.9U CN210692568U (en) | 2019-12-18 | 2019-12-18 | Radiation detection probe and chip |
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| CN210692568U true CN210692568U (en) | 2020-06-05 |
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