CN115347011A - 显示面板及显示面板的制备方法 - Google Patents

显示面板及显示面板的制备方法 Download PDF

Info

Publication number
CN115347011A
CN115347011A CN202110519180.4A CN202110519180A CN115347011A CN 115347011 A CN115347011 A CN 115347011A CN 202110519180 A CN202110519180 A CN 202110519180A CN 115347011 A CN115347011 A CN 115347011A
Authority
CN
China
Prior art keywords
light
micro
electrode
transparent substrate
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110519180.4A
Other languages
English (en)
Inventor
林益祥
林辉巨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN202110519180.4A priority Critical patent/CN115347011A/zh
Priority to US17/564,569 priority patent/US20220367770A1/en
Publication of CN115347011A publication Critical patent/CN115347011A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/21—Structure, shape, material or disposition of high density interconnect preforms of an individual HDI interconnect
    • H01L2224/214—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32238—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请提供一种显示面板，其包括：透明基板；多个电极块，所述多个电极块位于所述透明基板上，每一电极块上开设有透光狭缝；多个导电的粘合块，每一粘合块涂布于一电极块远离所述透明基板的表面，且每一粘合块部分嵌入一电极块的透光狭缝中；多个微型发光二极管，每一微型发光二极管经由一粘合块固定在一电极块上并与该电极块电连接。本申请还提供一种显示面板的制备方法。

Description

显示面板及显示面板的制备方法
技术领域
本申请涉及显示领域，尤其涉及一种显示面板和该显示面板的制备方法。
背景技术
目前的显示技术中，微型发光二极管(Light Emitting Diode，LED)具有高亮度、低功耗的特点，且微型LED显示面板采用自发光技术，具有更好的色彩表现。目前微型LED显示面板的生产制程，在巨量转移的过程中会出现粘合材料的非均匀溢出，导致短路或微型LED晶粒歪斜。在检测与修复过程中，需要对微型LED进行点亮检测，即对微型LED通电，并检测微型LED是否发光。对于垂直型微型LED，点亮检测需要在设置上电极块后进行，若检测出异常，其修复过程需要将上电极块拆除，成本与修复难度较高。
发明内容
本申请一方面提供一种显示面板，其包括：
透明基板；
多个电极块，所述多个电极块位于所述透明基板上，每一电极块上开设有透光狭缝；
多个导电的粘合块，每一粘合块涂布于一电极块远离所述透明基板的表面，且每一粘合块部分嵌入一电极块的透光狭缝中；
多个微型发光二极管，每一微型发光二极管经由一粘合块固定在一电极块上并与该电极块电连接。
所述透光狭缝与所述电极块之间形成高度差，使得所述粘合块在绑定过程中部分嵌入所述透光狭缝，从而有利于避免多余的粘合材料溢出；同时，由于所述透光狭缝增大了所述粘合块与所述电极块的接触面积，有利于提升所述微型LED与所述电极块之间的附着力，减小所述粘合块的阻值，从而有利于提升绑定的质量。
在一实施例中，每一所述电极块上的透光狭缝形成的狭缝图案被一所述微型LED部分覆盖。
在一实施例中，所述电极块为不透明的导电材料。
所述透光狭缝在一不透明的电极块上形成的狭缝图案被一微型LED部分覆盖，有利于在点亮检测过程中，透过未被覆盖的部分透光狭缝检测微型LED是否发光。
在一实施例中，所述微所述微型LED为水平式微型LED或垂直式微型LED。
本申请另一方面提供一种显示面板的制备方法，其包括：
提供一透明基板；
在所述透明基板上形成多个电极块；
在每一所述电极块上开设透光狭缝；
在每一所述电极块远离所述透明基板的表面上涂布粘合胶；
转移多个微型LED于所述透明基板上，使得每一所述微型LED通过所述粘合胶固定在一电极块上，并使得粘合胶部分嵌入所述电极块的透光狭缝中。
所述使得粘合胶部分嵌入所述电极块的透光狭缝中，有利于避免微型LED晶粒在绑定过程中歪斜。
在一实施例中，所述转移多个微型LED于所述透明基板上的步骤还包括使微型LED部分覆盖所述透光狭缝。
在一实施例中，所述制备方法在转移多个微型LED于所述透明基板上之后还包括：
通过所述电极块对所述多个微型LED进行通电；
透过所述透光狭缝，检测所述多个微型LED是否发光。
在一实施例中，所述每一所述微型LED包括位于靠近所述透明基板一侧的下电极与位于远离所述透明基板一侧的上电极。
在一实施例中，所述对所述电极块进行通电的步骤具体为：
使用探针对每一所述微型LED的上电极通电。
所述使微型LED部分覆盖所述透光狭缝，有利于在点亮检测过程中通过狭缝检查垂直型微型LED是否发光，避免了由于探针体积过大从而难以直接检测微型LED的发光情况。所述使用探针对每一微型LED的上电极通电，用于点亮检测，有利于在设置电极层之前进行检查，优化了检查的流程，避免了对微型LED进行更换或修复时还需一并拆解电极层，有利于节约成本，同时有利于减少拆装流程并降低了技术难度。
在一实施例中，所述粘合块为紫外线固晶胶，所述使得每一微型发光二极管通过一粘合胶固定在一电极块上具体为：
通过所述透光狭缝进行光线辐照，固化所述粘合胶。
所述通过透光狭缝进行光线辐照，固化紫外线固晶胶，有利于优化绑定的流程以及提升绑定的质量。
附图说明
图1为本申请一实施例中显示面板的部分剖视图。
图2为本申请一实施例中电极块的俯视图。
图3为本申请一实施例中电极块与微型LED绑定后的剖视图。
图4为本申请其他实施例中电极块的俯视图。
图5为本申请一实施例中显示面板制备的流程图。
图6为本申请一实施例中检测显示面板的原理图。
主要元件符号说明
显示面板 100
透明基板 10
电极块 30
透光狭缝 31
粘合块 50
微型LED 70
下电极 71
上电极 73
绝缘层 40
黑矩阵 41
平坦化层 80
电极层 90
连接部 91
电极部 93
探针 a
光学检测机 b
步骤 S1、S2、S3、S4、S5、S6、S7、S8
如下具体实施方式将结合上述附图进一步说明本申请。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。
为能进一步阐述本申请达成预定目的所采取的技术手段及功效，以下结合附图及较佳实施方式，对本申请作出如下详细说明。
本申请所述的“微型LED”或则“微型发光二极管”是指尺寸小于50μm的无机发光二极管。
本实施例提供一种显示面板，请参阅图1，显示面板100包括：透明基板10、多个电极块30、多个粘合块50、多个微型LED70、绝缘层40、黑矩阵41、平坦化层80以及电极层90。所述多个电极块30设于透明基板10上，每一电极块30上开设有透光狭缝31。粘合块50涂布于每一电极块30远离透明基板10的一侧上，且粘合块50部分嵌入透光狭缝31中。微型LED70设于粘合块50远离电极块30的一侧，即每一微型LED70通过一粘合块50与一电极块30绑定。绝缘层40填充于透明基板10设有电极块30的一侧，电极块30、粘合块50和微型LED70嵌入绝缘层40。黑矩阵41设于绝缘层40远离透明基板10的一侧，平坦化层80覆盖绝缘层40和黑矩阵41。电极层90贯穿平坦化层80并与每一微型LED70电连接。
在本实施例中，显示面板100还包括驱动模块(图未示)，驱动模块可为一集成电路、一驱动芯片或多颗芯片组合。所述驱动模块分别与每一电极块30电连接，例如驱动模块通过金属线分别与每一电极块30电连接，以向每一与电极块30所绑定的微型LED70分别输送电信号(例如电压信号)。电极层90为共阴极，用于向多个微型LED70输送相同的电压信号。所述驱动模块输送的电压信号与电极层90输送的电压信号不同，以在微型LED70的两个电极之间构成电压差，从而驱动微型LED70发光，每一微型LED70是否发光以及发光亮度可以由所述驱动模块进行控制。
请一并参阅图2和图3，在本实施例中，透光狭缝31在电极块30上形成狭缝图案，所述狭缝图案为“米”字型，即四条透光狭缝31共同相交于电极块30的几何中心，且任意相邻两透光狭缝31之间可以形成45°的夹角。粘合块50设于所述狭缝图案的中心位置，微型LED70设于粘合块50上，且部分覆盖所述狭缝图案，透光狭缝31部分被粘合块50嵌入。所述透光狭缝31构成的狭缝图案，与电极块30之间形成高低差，使得所述透光狭缝可以用于容纳部分粘合块50，微型LED70部分覆盖所述狭缝图案，可以保留部分狭缝空间，使多出的粘合块50向未被覆盖的狭缝空间中延伸，避免了粘合块50的非均匀性溢出以及由于溢出导致的短路。由于粘合块50部分嵌入透光狭缝31中，增大了粘合块50和电极块30之间的接触面积，从而增大了粘合块50与电极块30之间的附着力，相当于提高了微型LED70与电极块30之间的附着力。同时，由于接触面积的增加，粘合块50相对的电阻值减小，提升了微型LED70与电极块30之间的欧姆接触。
请参阅图4，在其他实施例中，透光狭缝31在电极块30上构成的狭缝图案还可以是“S”型(参图4中的(A)图)、雪花型(参图4中的(B)图)、“卍”字型(参图4中的(C)图)、蛇型(参图4中的(D)图)、回廊型(参图4中的(E)图)、条纹型(参图4中的(F)图)或网孔型(参图4中的(G)图)等被微型LED70部分覆盖的图案。即所述狭缝图案存在未被微型LED70覆盖的部分，用于在粘合块50溢出时容纳多余的部分粘合块50。
请再参阅图1，在本实施例中，微型LED70为垂直型微型LED，即微型LED70包括靠近电极块30的下电极71和远离电极块30的上电极73，下电极71和上电极73分别位于微型LED70相对的上下两端。在其他实施例中，微型LED70还可以是水平型微型LED，即微型LED70的两个电极位于微型LED70的同一端。
在本实施例中，透明基板10的材料可以是玻璃，也可以是其他透明材料。
在本实施例中，电极块30为不透光的金属导电材料。在其他实施例中，电极块30也可以是其他导电材料如透明导电氧化物等。
在本实施例中，粘合块50为导电的光固化胶。在其他实施例中，粘合块50还可以是银胶或固晶胶、助焊剂等导电的固晶材料。
在本实施例中，绝缘层40的材料为介电材料，黑矩阵41设于每一微型LED70周围，用于将每一微型LED70发出的光线区分开，防止发生混光。平坦化层80为有机材料，用于调整显示面板100上由于设置了不同功能层而产生的高低差，防止电场相互干扰，降低功耗。
在本实施例中，电极层90包括用于与微型LED70的上电极73进行电连接的连接部91，以及设置于平坦化层80上的电极部93，电极部93位于黑矩阵41的覆盖区域内。连接部91的材料为氧化铟锡，电极部93的材料可以是不透光的金属导电材料。在其他实施例中，连接部91的材料还可以是其他透明导电材料。
本实施例还提供一种显示面板的制备方法，请参阅图5，显示面板的制备方法包括：
步骤S1：提供一透明基板；
步骤S2：在所述透明基板上形成多个电极块；
步骤S3：在每一所述电极块上开设透光狭缝；
步骤S4：在每一所述电极块远离所述透明基板的表面上涂布粘合块；
步骤S5：转移多个微型LED于所述透明基板上，使得每一微型LED通过一粘合块固定在一电极块上；
步骤S6：在每一组电极块、微型LED之间设置绝缘层，并在绝缘层上设置黑矩阵；
步骤S7：通过所述电极块对所述多个微型LED进行通电；
步骤S8：透过所述透光狭缝，检测所述多个微型LED是否发光。
在本实施例中，步骤S2还包括设置驱动模块，并将每一电极块分别与所述驱动模块电连接。
在本实施例中，步骤S3中开设透光狭缝的方法可以是黄光蚀刻、激光雕刻或其他可以在电极块上开设透光狭缝的方法。
在本实施例中，步骤S4中粘合胶的涂布采用点胶的方式，所述粘合胶部分覆盖所述透光狭缝31。步骤S5中将微型LED70转移到透明基板10上具体为将每一微型LED70转移到每一电极块30的所述粘合胶上，由于微型LED70本身的重力，会将所述粘合胶部分压入透光狭缝31中。于一实施例中，可以在转移到电极块30上时对微型LED70施加一定的压力，此时溢流的所述粘合胶在压力下进入透光狭缝31中，避免了由于所述粘合胶的扩散不均匀导致微型LED70在绑定后发生歪斜。
在本实施例中，步骤S4涂布的粘合胶为紫外线固晶胶，步骤S5中使得每一微型LED70通过所述粘合胶固定在一电极块30上的方法具体为使用紫外光从透明基板10远离电极块30的一侧进行照射，紫外光穿过透光狭缝31，照射到所述粘合胶上，使所述粘合胶固化形成粘合块50，完成绑定过程。在其他实施例中，粘合胶还可以为银胶或固晶胶，此时可以使用热固化的方式使所述粘合胶固化形成粘合块50，完成绑定。
在本实施例中，步骤S5还包括使微型LED70部分覆盖透光狭缝31，也即透光狭缝31存在不被微型LED70覆盖的部分，透光狭缝31未被微型LED70覆盖的部分可透光，可通过透光狭缝31对微型LED70进行点亮检测，即执行步骤S7和步骤S8。
请参阅图6，在本实施例中，步骤S7还包括使用一探针a对每一微型LED70的上电极73通电，也即，以探针a施加给微型LED70的上电极73一检测电压，从而使得微型LED70的上电极73和下电极71之间形成电压差，驱动微型LED70发光。步骤S8具体为将光学检测机b设置在透明基板10远离微型LED70的一侧，且指向与探针a电连接的微型LED70，当对微型LED70通电时，光学检测机b可以从透光狭缝31透光的部分检测微型LED70是否发光，从而对微型LED70的质量进行检测。由于微型LED70的大小为1-50μm，探针的针头截面远大于微型LED70，在通电时难以从微型LED70的上电极73一侧检测微型LED70的发光情况，因此通过透光狭缝31，可以从显示面板100的另一侧对微型LED70的发光情况进行检测。本实施例使用探针对微型LED70的上电极73进行通电，可以在设置电极层90之前对微型LED70进行点亮检测，避免了对微型LED70进行更换或修复时还需一并拆解电极层90，因此有利于节约成本，同时有利于减少拆装流程并降低了技术难度。在其他实施例中，光学检测机b也可以设置在透明基板10靠近微型LED70的一侧，用于接收微型LED70未被探针a遮挡的光线，即光学检测机b位于与探针a同一侧的可以接收到微型LED70发出的光线的任意位置。这样也可以在设置电极层90之前对微型LED70进行点亮检测。
在其他实施例中，电极块30的材料还可以是透明导电材料，此时点亮检测流程既可以通过透光狭缝31进行检测，也可以直接透过电极块30进行检测。微型LED70还可以是水平型微型LED，此时步骤S7不需要使用探针a对每一微型LED70进行通电，步骤S8中检测微型LED70是否发光也可以不通过透光狭缝31，即光学检测机b还可以在透明基板10靠近微型LED70的一侧进行点亮检测。
在本实施例中，点亮检测具体为使用探针a和光学检测机b对每一微型LED70进行通电和检测是否发光。在其他实施例中，也可以将每三个微型LED70作为一组，每一组包括红、绿、蓝三种颜色的微型LED70，每次对一组微型LED70进行通电，并直接检测每组的发光情况。还可以进行抽样检测，如每隔三个微型LED70检查一个微型LED70的发光情况，从而得出整体的良品率。
本技术领域的普通技术人员应当认识到，以上的实施方式仅是用来说明本申请，而并非用作为对本申请的限定，只要在本申请的实质精神范围之内，对以上实施例所作的适当改变和变化都落在本申请要求保护的范围之内。

Claims (10)

1.一种显示面板，其特征在于，包括：
透明基板；
多个电极块，所述多个电极块位于所述透明基板上，每一电极块上开设有透光狭缝；
多个导电的粘合块，每一粘合块涂布于一电极块远离所述透明基板的表面，且每一粘合块部分嵌入一电极块的透光狭缝中；
多个微型发光二极管，每一微型发光二极管经由一粘合块固定在一电极块上并与该电极块电连接。
2.如权利要求1所述的显示面板，其特征在于，每一电极块上的透光狭缝形成的狭缝图案被一所述微型发光二极管部分覆盖。
3.如权利要求1所述的显示面板，其特征在于，所述电极块为不透明的导电材料。
4.如权利要求1所述的显示面板，其特征在于，所述微型发光二极管为水平式微型发光二极管或垂直式微型发光二极管。
5.一种显示面板的制备方法，其特征在于，包括：
提供一透明基板；
在所述透明基板上形成多个电极块；
在每一所述电极块上开设透光狭缝；
在每一所述电极块远离所述透明基板的表面上涂布导电的粘合胶；
转移多个微型发光二极管于所述透明基板上，使得每一所述微型发光二极管通过所述粘合胶固定在一电极块上，并使得所述粘合胶部分嵌入所述电极块的透光狭缝中。
6.如权利要求5所述的显示面板的制备方法，其特征在于，所述转移多个微型发光二极管于所述透明基板上的步骤还包括使微型发光二极管部分覆盖所述透光狭缝。
7.如权利要求5所述的显示面板的制备方法，其特征在于，所述制备方法在转移多个微型发光二极管于所述透明基板上之后还包括：
通过所述电极块对所述多个微型发光二极管进行通电；
透过所述透光狭缝，检测所述多个微型发光二极管是否发光。
8.如权利要求7所述的显示面板的制备方法，其特征在于，每一所述微型发光二极管包括位于靠近所述透明基板一侧的下电极与位于远离所述透明基板一侧的上电极。
9.如权利要求8所述的显示面板的制备方法，其特征在于，所述对所述电极块进行通电的步骤具体为：
使用探针对每一所述微型发光二极管的上电极通电。
10.如权利要求5所述的显示面板的制备方法，其特征在于，所述粘合胶为紫外线固晶胶，所述使得每一所述微型发光二极管通过一粘合胶固定在一电极块上具体为：
通过所述透光狭缝进行光线辐照，固化所述粘合胶。
CN202110519180.4A 2021-05-12 2021-05-12 显示面板及显示面板的制备方法 Pending CN115347011A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202110519180.4A CN115347011A (zh) 2021-05-12 2021-05-12 显示面板及显示面板的制备方法
US17/564,569 US20220367770A1 (en) 2021-05-12 2021-12-29 Display panel and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110519180.4A CN115347011A (zh) 2021-05-12 2021-05-12 显示面板及显示面板的制备方法

Publications (1)

Publication Number Publication Date
CN115347011A true CN115347011A (zh) 2022-11-15

Family

ID=83946688

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110519180.4A Pending CN115347011A (zh) 2021-05-12 2021-05-12 显示面板及显示面板的制备方法

Country Status (2)

Country Link
US (1) US20220367770A1 (zh)
CN (1) CN115347011A (zh)

Also Published As

Publication number Publication date
US20220367770A1 (en) 2022-11-17

Similar Documents

Publication Publication Date Title
KR102543408B1 (ko) 발광 디스플레이 유닛 및 디스플레이 장치
US7683539B2 (en) Light emitting device package and method for manufacturing the same
KR20200053451A (ko) 발광 모듈의 제조 방법 및 발광 모듈
US20150249069A1 (en) Display device and method for manufacturing display device
US7573194B2 (en) Display apparatus and method of manufacturing display apparatus
CN114175260A (zh) 显示装置的制造方法以及用于制造显示装置的基板
EP2538462A2 (en) Light emitting device module
WO2011129203A1 (ja) 発光装置
EP2492577A2 (en) Light Emitting Device
JP2013004815A (ja) 光源回路ユニットおよび照明装置、並びに表示装置
JP6912730B2 (ja) 発光モジュールの製造方法
JP2011134926A (ja) 半導体発光装置及びその製造方法
CN117393659A (zh) 发光装置、其制造方法及显示模块
CN101608774A (zh) 发光二极管照明装置及制造方法
KR102111200B1 (ko) 발광 모듈의 제조 방법 및 발광 모듈
CN112735286A (zh) Led灯珠
CN115347011A (zh) 显示面板及显示面板的制备方法
JP6825608B2 (ja) 発光モジュールの製造方法
US9807834B2 (en) Load device, driver for driving the load, and driving method
TWI781616B (zh) 顯示面板及顯示面板的製備方法
JP7208470B2 (ja) 発光モジュールの製造方法及び発光モジュール
JP2009283776A (ja) 半導体装置、半導体装置モジュール及び半導体装置モジュールの製造方法
KR20200071497A (ko) 마이크로led를 이용한 전자 장치 제조방법
KR101823930B1 (ko) 발광소자 패키지 어레이 및 발광소자 패키지 제조 방법
CN219371024U (zh) 一种像素单元与显示面板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination