CN115327680B - Lens preparation method - Google Patents
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- CN115327680B CN115327680B CN202210944698.7A CN202210944698A CN115327680B CN 115327680 B CN115327680 B CN 115327680B CN 202210944698 A CN202210944698 A CN 202210944698A CN 115327680 B CN115327680 B CN 115327680B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 72
- 238000010992 reflux Methods 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000001259 photo etching Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000000630 rising effect Effects 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 5
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 12
- 238000010168 coupling process Methods 0.000 abstract description 12
- 238000005859 coupling reaction Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910018503 SF6 Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The embodiment of the application provides a lens preparation method, which comprises the following steps: performing reflow etching on the substrate at least twice to form a lens; forming a lens after the first reflow etching on the substrate by the first reflow etching; the lens after the subsequent reflow etching is formed over the lens after the previous reflow etching. The lens preparation method solves the technical problem that the coupling efficiency of the lens prepared by the traditional lens preparation method to light is low.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a lens preparation method.
Background
The closer the lens' profile is to the standard curve, the higher the coupling efficiency of light. Thus, the lens preparation expects that the smaller the extent of etching in the lateral direction, the better. Compared with wet etching, the anisotropic characteristic of dry etching is obvious, so that the lens is prepared by adopting a dry process. Dry etching, although small in lateral etching, still causes a large difference between the actual shape and the standard shape of the lens due to the accumulation of etching process time, which results in a lower coupling efficiency of the lens to light.
The main process of the existing lens is shown in fig. 1-1, a photoresist column is formed on a support substrate 11; as shown in fig. 1-2, standard spheres are formed by thermal reflow; as shown in fig. 1-3, after one etching, lens 12 is formed, at which time the actual shape of lens 12 differs significantly from the standard spherical shape. The conventional lens etching time is long, so that the lens lateral etching degree is large, and the coupling efficiency of the lens to light is reduced.
Therefore, the coupling efficiency of the lens prepared by the traditional lens preparation method to light is low, and the technical problem to be solved is urgently needed by the person skilled in the art.
The above information disclosed in the background section is only for enhancement of understanding of the background of the application and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The embodiment of the application provides a lens preparation method, which aims to solve the technical problem that the coupling efficiency of a lens prepared by the traditional lens preparation method to light is low.
The embodiment of the application provides a lens preparation method, which comprises the following steps:
performing reflow etching on the substrate at least twice to form a lens;
wherein, the first reflow etching is performed on the substrate and forms a lens after the first reflow etching; the lens after the subsequent reflow etching is formed over the lens after the previous reflow etching.
By adopting the technical scheme, the embodiment of the application has the following technical effects:
the lens preparation method of the embodiment of the application forms the lens through at least two times of reflux etching. The first reflow etching is performed on the substrate to form a lens after the first reflow etching; the lenses after the subsequent reflow etching are respectively formed on the lenses after the previous reflow etching. I.e. the final lens is formed by superimposing the lenses after each reflow etch. The traditional lens is prepared by only adopting one etching, so that the single etching time is longer, and the single longer etching time causes the transverse etching degree of the lens to be larger, thereby causing the coupling efficiency of the lens to light to be reduced. According to the lens preparation method, the final lens is formed by adopting at least two times of reflux etching, so that the time of each etching is short, the lateral etching degree of the lens is small by single short-time etching, the final lens is closer to a standard ball, and the coupling efficiency of light is high.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1-1 is a schematic diagram of a conventional lens preparation method for forming a photoresist column on a support substrate;
FIGS. 1-2 are schematic diagrams of the structure of a photoresist column after thermal reflow;
FIGS. 1-3 are schematic illustrations of the structure of a lens formed by a single etch based on FIG. 2;
FIG. 2 is a flow chart of an embodiment of a lens manufacturing method according to an embodiment of the present application;
fig. 3-1 to 3-7 are schematic structural diagrams corresponding to respective processes of the lens manufacturing method according to an embodiment of the application.
Reference numerals:
the substrate 100, the photoresist column 211 after the first development, the lens 311 after the first reflow, the lens 411 after the first reflow etching, the photoresist column 511 after the second development, the lens 611 after the second reflow etching, and the lens 711 after the second reflow etching.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
Example 1
As shown in fig. 2 and fig. 3-1 to fig. 3-7, the lens manufacturing method according to the embodiment of the present application includes:
performing at least two reflow etches on the substrate 100 to form a lens;
wherein, the first reflow etching is performed on the substrate and forms the lens 411 after the first reflow etching; the lens after the subsequent reflow etching is formed over the lens after the previous reflow etching.
The lens preparation method of the embodiment of the application forms the lens through at least two times of reflux etching. The first reflow etching is performed on the substrate to form a lens after the first reflow etching; the lenses after the subsequent reflow etching are respectively formed on the lenses after the previous reflow etching. I.e. the final lens is formed by superimposing the lenses after each reflow etch. The traditional lens is prepared by only adopting one etching, so that the single etching time is longer, and the single longer etching time causes the transverse etching degree of the lens to be larger, thereby causing the coupling efficiency of the lens to light to be reduced. According to the lens preparation method, the final lens is formed by adopting at least two times of reflux etching, so that the time of each etching is short, the lateral etching degree of the lens is small by single short-time etching, the final lens is closer to a standard ball, and the coupling efficiency of light is high.
In implementation, each of the second and subsequent reflow etches includes:
a temperature rising reflux step of gradually rising reflux temperature;
the first reflow etching comprises:
a constant temperature reflux step of keeping the reflux temperature constant;
wherein the highest value of the reflux temperature in the heating reflux step is higher than the reflux temperature in the constant temperature reflux step, and the initial temperature of the reflux temperature is higher than the glass transition temperature of the photoresist.
In this way, the reflow in the first reflow etching adopts a constant temperature reflow mode, and correspondingly, the reflow temperature in the constant temperature reflow step is kept constant. And the reflow in each reflow etching of the second time and the subsequent times adopts a heating reflow mode, and correspondingly, the reflow temperature in the heating reflow step gradually rises. The initial temperature of the reflow temperature is higher than the glass transition temperature of the photoresist, which is the basis for enabling reflow; and the highest value of the reflux temperature in the warming reflux step is higher than the reflux temperature in the constant temperature reflux step.
The reflow in each of the second and subsequent reflow etches is the flow of the photoresist itself, which is based on the lens after the previous reflow etch, and a greater driving force is required to promote the flow of the photoresist, so that the reflow temperature gradually increases. And the standard lens formed by reflow in each reflow etching of the second time and the subsequent times is subjected to shorter etching, so that the lateral etching degree is lower, and the lens is more similar to a standard ball, thereby improving the coupling efficiency of light.
Example two
The lens manufacturing method of the embodiment of the application has the following characteristics based on the first embodiment.
In the implementation, the times of the reflux etching are two times;
in the temperature rising reflow step of the second reflow etching, the reflow temperature gradually rises in a gradient rising manner.
The reflux temperature adopts a gradient rising mode, so that the reflux rate can be increased.
The lens preparation method of the embodiment of the application comprises the following steps according to time sequence;
step S1: carrying out first reflux etching;
step S2: and (5) carrying out reflow etching for the second time.
The lens preparation method of the embodiment of the application adopts two times of reflux etching preparation. Thus, the etching time in the second reflow etching is shorter than that in the first reflow etching, and the shorter single etching time ensures that the lens has smaller transverse etching degree and can be closer to a standard ball, thus having higher coupling efficiency of light. Meanwhile, the preparation method is relatively simple in process, and operability of the preparation method is considered while the quality of the lens is improved.
In implementation, the first reflow etching includes the following steps:
forming a photoresist column on the substrate, wherein the end face of the photoresist column is round;
reflux is carried out at constant temperature to form a spherical lens smaller than the hemisphere after the first reflux;
and carrying out dry etching on the lens after the first reflow to form the lens after the first reflow etching.
After each step of the first reflow etch is completed, the formed first reflow etched lens is smaller in size than the final target lens. Otherwise, the lens after the second reflow etching will exceed the size of the final target lens.
In the implementation, the second reflow etching comprises the following steps:
forming a photoresist column on the lens after the first reflow etching; wherein, the end face of the photoresist column is round;
heating and refluxing, wherein the refluxing temperature is gradually increased in a gradient increasing manner, and the time of maintaining each refluxing temperature is a first preset time, so that a lens after the second refluxing is formed; under the action of temperature, gravity and surface tension, the reflow of the photoresist can fill the redundant part of transverse etching, and the lens restores the standard spherical shape after reflow;
naturally cooling to room temperature;
and carrying out dry etching on the lens subjected to the second reflow etching to form the lens subjected to the second reflow etching.
The temperature of the heating reflux is raised in a gradient manner, because the reflux in the second reflux etching is the self-flowing of the photoresist and is performed on the basis of the lens after the previous reflux etching, and a larger driving force is needed to promote the flowing of the photoresist, so that the reflux temperature is raised in a gradient manner, the driving force is increased in a gradient manner, and the flowing of the photoresist can be driven more favorably. The reflux effect is better than if the reflux temperature is gradually increased a little.
In implementation, the heating reflux step specifically includes:
placing the substrate, the lens after the first reflow etching and the photoresist column on the substrate in an oven for reflow, wherein the initial temperature of the oven is 150 ℃, and then the range of the rising amplitude of the reflow temperature is more than or equal to 3 ℃ and less than or equal to 8 ℃, for example, the temperature can be raised to 155 ℃,160 ℃ and 165 ℃; wherein the first preset time for each reflux temperature is maintained at 1 minute.
The duration of the reflow temperature will affect the shape of the photoresist after reflow, and the initial temperature, the reflow temperature, and the first preset time are optimal for reflow the formed photoresist.
In implementation, the constant temperature reflow step specifically includes:
the substrate and the photoresist column formed on the substrate were placed in an oven for constant temperature heating, the oven temperature range was 160 c, and the heating time was 3 minutes.
In practice, both the first reflow etching and the second reflow etching include the step of forming photoresist pillars. The first reflow etching requires forming a photoresist column over the substrate, and the second reflow etching requires forming a photoresist column over the lens after the first reflow etching. The step of forming the photoresist column is the same, and the substrate, the substrate and the lens formed thereon after the first reflow etching are respectively regarded as the parts to be formed with the photoresist column, and the step of forming the photoresist column specifically comprises:
heating the part to be formed with the photoresist column on a hot plate, wherein the temperature of the hot plate is more than or equal to 80 ℃ and less than or equal to 150 ℃ and the heating time is more than or equal to 8 minutes and less than or equal to 15 minutes;
placing the heated component to be formed into a photoresist column on a photoresist homogenizing machine for photoresist homogenizing, wherein the value range of the first rotating speed of the photoresist homogenizing machine is more than or equal to 1800rmp/min and less than or equal to 2200rmp/min, and the value range of the first rotating speed maintaining time is more than or equal to 8 seconds and less than or equal to 12 seconds; accelerating to enable the second rotating speed to be reached, wherein the value range of the second rotating speed is more than or equal to 5800rmp/min and less than 6200rmp/min, and the value range of the second rotating speed maintaining time is more than or equal to 80 seconds and less than or equal to 120 seconds;
after homogenizing the binding beam, drying the binding beam on a hot plate, wherein the temperature of the hot plate is more than or equal to 80 ℃ and less than or equal to 150 ℃, and the heating time is more than or equal to 8 minutes and less than or equal to 15 minutes;
after baking, selecting a photoetching plate with a round mask shape for photoetching under a photoetching machine;
and developing under a developing solution after photoetching, and finally cleaning with deionized water to form a photoresist column above the part to be formed with the photoresist column.
Specifically, in the step of forming the photoresist column in the first reflow etching and the second reflow etching, the radial dimensions of the photoresist column are the same, and the heights may be the same or different.
In the implementation, the height of the photoresist column above the lens after the first reflow etching is 5 micrometers; i.e., the distance from the top of the lens after the first reflow etch to the very point of the photoresist column is 5 microns.
The height of the photoresist pillars above the substrate was 5 microns.
In implementation, the etching of the lens 611 after the second reflow and the etching of the lens 311 after the first reflow are dry etching, including the following steps:
etching under the condition of a selection ratio of 1:1, wherein the specific parameters are as follows: the pressure was 1pa, SF6 was 24sccm, C4F8 was 5sccm, and Ar was 2sccm. Wherein, the liquid crystal display device comprises a liquid crystal display device,
where the selectivity ratio refers to how much faster one material etches than another under the same etching conditions, it is defined as the ratio of the etching rate of the etched material to the etching rate of the other material. SF6 is sulfur hexafluoride, C4F8 is octafluorocyclobutane, ar is argon, and sccm is the volume flow unit.
Specifically, the selection ratio is the ratio of the rates of the two etching materials.
In implementation, the constant temperature reflow step specifically includes:
the substrate and the photoresist column formed on the substrate were placed in an oven for constant temperature heating, the oven temperature range was 160 c, and the heating time was 3 minutes.
As an alternative, the step of forming the photoresist column specifically includes:
heating the part to be formed with the photoresist column on a hot plate, wherein the temperature of the hot plate is 110 ℃, and the heating time is 10 minutes;
placing the heated substrate on a spin coater for spin coating, wherein the first rotating speed of the spin coater is 2000rmp/min, and the first rotating speed is maintained for 10 seconds; accelerating to reach a second rotating speed, wherein the second rotating speed is 6000rmp/min, and the second rotating speed maintaining time is 100 seconds;
after the spin coating is finished, taking out the substrate, drying the substrate on a hot plate, wherein the temperature of the hot plate is 110 ℃, and the heating time is more than or equal to 10 minutes;
after baking, selecting a photoetching plate with a round mask shape for photoetching under a photoetching machine;
and developing under a developing solution after photoetching, and finally cleaning with deionized water to form a photoresist column above the part to be formed with the photoresist column.
Thus, the diameter of the final lens that can be formed is in the range of 100 microns or more and 200 microns or less. By adjusting the diameter of the photoresist column, and the various directional parameters, the diameter of the final lens can be controlled. It should be noted that the final lens is generally a spherical cap smaller than a hemisphere. In the art and in the present application, the diameter of the final lens does not correspond to the diameter of a sphere commonly used in mathematics, but the diameter of the base of the spherical cap.
Example III
The lens preparation method of the embodiment of the application comprises the following steps according to the time sequence:
1. as shown in fig. 3-1, a silicon wafer (i.e., a substrate 100) was placed on a hot plate at 110 c for 10min;
then, placing the baked silicon wafer on a spin coater for spin coating, setting the first rotating speed of the spin coater to be 2000rmp/min, maintaining for 10s, and accelerating for 4s to enable the rotating speed to reach the second rotating speed of 6000rmp/min, and maintaining for 100s;
after the spin coating is finished, taking out the silicon wafer, and placing the silicon wafer on a hot plate for drying, wherein the heating temperature of the hot plate is 110 ℃ for 10min;
after baking, the mask is selected to be a round mask, the mask is subjected to photoetching under a photoetching machine, developed under a developing solution after photoetching, and finally washed by deionized water, and the photoresist column 211 after the first development, namely the photoresist column formed on the substrate, has the shape shown in fig. 3-2.
2. The substrate and the photoresist column 211 after the first development were placed in an oven for constant temperature heating at 160 c for 3min. Under the action of gravity and surface tension, a lens 311 with a height of 25um after the first reflow is formed, and the lens 311 after the first reflow is a ball lens as shown in fig. 3-3.
3. Etching under the condition of a selection ratio of 1:1 by dry etching, wherein the specific parameters are as follows: pressure 1pa, SF6 24sccm, C4F8 5sccm, ar 2sccm (other process parameters, with type effect when the selection ratio is 1). The etching rate should not be too high, otherwise, the heat dissipation of the silicon wafer may be not timely, defects may occur, and the yield may be low. The shape of the ball lens changes after etching due to the presence of lateral etching, and the longer the etching process time, the more obvious the change, and the lens 411 after the first reflow etching is shown in fig. 3-4.
4. Using the reticle in step 1, a second developed photoresist column 511 (the distance from the top of the sphere to the highest position of the photoresist) having a height of 5um is formed after photoresist is again blanket-etched, and then the conditions in step 1 are repeated as shown in fig. 3-5. The photoresist column 511 after the second development, i.e., the photoresist column is formed over the lens after the first reflow etching.
5. Repeating the condition in the step 2, refluxing again in the oven, adopting a way that the refluxing temperature gradually rises for the accuracy of refluxing, keeping the refluxing temperature at 150 ℃ for 1min, then heating to 155 ℃,160 ℃,165 ℃ and keeping the refluxing temperature for 1min respectively, and finishing;
naturally cooling to room temperature;
under the action of temperature, gravity and surface tension, the photoresist can fill the redundant part of transverse etching, the lens recovers the standard spherical shape after reflow, and the lens 611 after the second reflow is shown in fig. 3-6.
6. The etching parameters are as shown in step 3, and since the photoresist thickness is relatively thin, the etching time is shorter, the lateral corrosion is less and the lens 711 is more similar to a standard ball, and the shape of the lens 711 after the second reflow etching is as shown in fig. 3-7.
In describing the present application and its embodiments, it should be understood that the orientation or positional relationship indicated by the terms "top", "bottom", "height", etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description and simplification of the description, and are not indicative or implying that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the present application.
In the present application and its embodiments, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrated; the device can be mechanically connected, electrically connected and communicated; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application and its embodiments, unless explicitly specified and limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include both the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
The above disclosure provides many different embodiments, or examples, for implementing different structures of the application. The foregoing description of specific example components and arrangements has been presented to simplify the present disclosure. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. A method of manufacturing a lens, comprising:
performing reflow etching on the substrate at least twice to form a lens;
wherein, the first reflow etching is performed on the substrate and forms a lens after the first reflow etching; the lens after the subsequent reflow etching is formed above the lens after the previous reflow etching;
each of the second and subsequent reflow etches includes:
a temperature rising reflux step of gradually rising reflux temperature;
the first reflow etching comprises:
a constant temperature reflux step of keeping the reflux temperature constant;
wherein the highest value of the reflux temperature in the heating reflux step is higher than the reflux temperature in the constant temperature reflux step, and the initial temperature of the reflux temperature is higher than the glass transition temperature of the photoresist.
2. The method of manufacturing a lens according to claim 1, wherein the number of times of reflow etching is two;
in the temperature rising reflow step of the second reflow etching, the reflow temperature gradually rises in a gradient rising manner.
3. The method of manufacturing a lens according to claim 2, wherein the second reflow etching includes the steps of:
forming a photoresist column on the lens after the first reflow etching; wherein, the end face of the photoresist column is round;
the temperature rising and reflow step, wherein the time for maintaining each reflow temperature is a first preset time, and a lens after the second reflow is formed;
naturally cooling to room temperature;
and etching the lens subjected to the second reflow to form the lens subjected to the second reflow etching.
4. A lens preparation method according to claim 3, wherein the first reflow etching comprises the steps of:
forming a photoresist column on the substrate, wherein the end face of the photoresist column is round;
the constant temperature reflow step is performed to form a spherical lens smaller than a hemisphere after the first reflow;
and etching the lens after the first reflow to form the lens after the first reflow etching.
5. The method of manufacturing a lens according to claim 4, wherein the heating reflow step specifically includes:
placing the substrate, the lens after the first reflow etching and the photoresist column on the substrate in an oven for reflow, wherein the initial temperature of the oven is 150 ℃, and then, the value range of the rising amplitude of the reflow temperature is more than or equal to 3 ℃ and less than or equal to 8 ℃; wherein the first preset time for each reflux temperature is maintained at 1 minute.
6. The method of manufacturing a lens according to claim 5, wherein the step of forming a photoresist column, specifically comprises:
heating the part to be formed with the photoresist column on a hot plate, wherein the temperature of the hot plate is more than or equal to 80 ℃ and less than or equal to 150 ℃ and the heating time is more than or equal to 8 minutes and less than or equal to 15 minutes;
placing the heated component to be formed into a photoresist column on a photoresist homogenizing machine for photoresist homogenizing, wherein the value range of the first rotating speed of the photoresist homogenizing machine is more than or equal to 1800rmp/min and less than or equal to 2200rmp/min, and the value range of the first rotating speed maintaining time is more than or equal to 8 seconds and less than or equal to 12 seconds; accelerating to enable the second rotating speed to be reached, wherein the value range of the second rotating speed is more than or equal to 5800rmp/min and less than 6200rmp/min, and the value range of the second rotating speed maintaining time is more than or equal to 80 seconds and less than or equal to 120 seconds;
after homogenizing the binding beam, drying the binding beam on a hot plate, wherein the temperature of the hot plate is more than or equal to 80 ℃ and less than or equal to 150 ℃, and the heating time is more than or equal to 8 minutes and less than or equal to 15 minutes;
after baking, selecting a photoetching plate with a round mask shape for photoetching under a photoetching machine;
and developing under a developing solution after photoetching, and finally cleaning with deionized water to form a photoresist column above the part to be formed with the photoresist column.
7. The method of manufacturing a lens according to claim 6, wherein the constant temperature reflow step specifically includes:
the substrate and the photoresist column formed on the substrate were placed in an oven for constant temperature heating, the oven temperature range was 160 c, and the heating time was 3 minutes.
8. The method of manufacturing a lens according to claim 7, wherein the etching of the lens after the second reflow and the etching of the lens after the first reflow are dry etching, and parameters of the dry etching are as follows:
etching under the condition of a selection ratio of 1:1, wherein the specific parameters are as follows: the pressure was 1pa, SF6 was 24sccm, C4F8 was 5sccm, and Ar was 2sccm.
9. The method of manufacturing a lens according to claim 4, wherein the height of the photoresist column above the lens after the first reflow etching is 5 μm;
the height of the photoresist pillars above the substrate was 5 microns.
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|---|---|---|---|---|
| JP2002372603A (en) * | 2001-06-15 | 2002-12-26 | Nikon Corp | Optical part for optical communication and method for manufacturing the same |
| KR20050104062A (en) * | 2004-04-27 | 2005-11-02 | 한국생산기술연구원 | Method for manufacturing a micro multi-layer lens |
| CN105974745A (en) * | 2016-05-25 | 2016-09-28 | 王宏兴 | Micro lens and preparation method therefor, and experimental facility |
| CN106199781A (en) * | 2016-09-07 | 2016-12-07 | 中国科学技术大学 | A kind of flexible method making curved surface bionic compound eyes structure |
| KR101844688B1 (en) * | 2016-12-29 | 2018-04-02 | 서울대학교산학협력단 | Fresnel microlens, and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002122707A (en) * | 2000-10-13 | 2002-04-26 | Canon Inc | Aspheric microstructure and method for manufacturing the same |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002372603A (en) * | 2001-06-15 | 2002-12-26 | Nikon Corp | Optical part for optical communication and method for manufacturing the same |
| KR20050104062A (en) * | 2004-04-27 | 2005-11-02 | 한국생산기술연구원 | Method for manufacturing a micro multi-layer lens |
| CN105974745A (en) * | 2016-05-25 | 2016-09-28 | 王宏兴 | Micro lens and preparation method therefor, and experimental facility |
| CN106199781A (en) * | 2016-09-07 | 2016-12-07 | 中国科学技术大学 | A kind of flexible method making curved surface bionic compound eyes structure |
| KR101844688B1 (en) * | 2016-12-29 | 2018-04-02 | 서울대학교산학협력단 | Fresnel microlens, and manufacture method thereof |
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