CN115312479A - Semiconductor chip system and stacked packaging structure - Google Patents
Semiconductor chip system and stacked packaging structure Download PDFInfo
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- CN115312479A CN115312479A CN202210945595.2A CN202210945595A CN115312479A CN 115312479 A CN115312479 A CN 115312479A CN 202210945595 A CN202210945595 A CN 202210945595A CN 115312479 A CN115312479 A CN 115312479A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
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- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
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- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to the technical field of chip packaging, in particular to a semiconductor chip system and a stacking packaging structure, which comprises a substrate, wherein a solder ball is arranged on the lower surface of the substrate, a chip is arranged on the upper surface of the substrate, a welding spot is arranged at the bottom of the chip, protective glue is filled at the bottom of the chip, a plastic package body is arranged on the upper surface of the substrate, the chip is surrounded in the plastic package body, a phase change groove is formed in the plastic package body, the chip is positioned in the phase change groove, and a phase change heat absorption material is filled in the phase change groove; the phase-change material is a paraffin-based phase-change material; the invention has simple structure, improves the effective contact area during heat dissipation by reducing the thermal resistance during heat dissipation, improves the heat dissipation effect of the packaged chip and ensures the normal use of the packaged chip.
Description
Technical Field
The invention belongs to the technical field of chip packaging, and particularly relates to a semiconductor chip system and a stacked packaging structure.
Background
Because consumers prefer electronic products with thinner thickness and higher product performance and memory, the miniaturization design of electronic products is more and more common, in order to meet the requirements of users, a semiconductor packaging structure usually adopts a multi-chip stacking technology (Stack-Die) or a chip hybrid stacking technology (hybrid Stack-Die), two or more chips are stacked in a single packaging structure to obtain a semiconductor chip system, and the purposes of smaller product packaging volume and higher product performance are achieved through the semiconductor chip system.
Meanwhile, as the packaging structure of the semiconductor chip is developed towards the directions of small size, high pin count and high thermal efficiency, the power consumption of the chip is higher and higher, the performance of the semiconductor chip is improved, and meanwhile, higher heat is generated, and the generated heat is conducted and dissipated in time, so that the packaging structure is deformed or the chip is burnt out.
In the current single chip and multi-chip stack package, the heat dissipation capability of the chip is enhanced by adding a top metal heat dissipation cover, a heat sink or a heat radiator. However, a plastic package body with relatively low thermal conductivity still exists among the heat dissipation cover, the heat sink and the chip in the package, and meanwhile, because the contact surfaces at the middle interval are relatively more, the thermal resistance generated at the contact surfaces is relatively larger, so that the heat dissipation effect of the chip after the package is influenced, and meanwhile, the effective contact area of the chip after the package, which is in contact with the heat dissipation cover and the heat sink during heat dissipation, is not large, so that the heat dissipation efficiency is influenced.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides a semiconductor chip system and a stacked packaging structure, which can improve the effective contact area during heat dissipation, improve the heat dissipation effect of a packaged chip and ensure the normal use of the packaged chip by reducing the thermal resistance during heat dissipation.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention relates to a semiconductor chip stacking and packaging structure which comprises a substrate, wherein a solder ball is arranged on the lower surface of the substrate, a chip is arranged on the upper surface of the substrate, a welding spot is arranged at the bottom of the chip, protective glue is filled at the bottom of the chip, a plastic package body is arranged on the upper surface of the substrate, the chip is surrounded in the plastic package body, a phase change groove is formed in the plastic package body, the chip is positioned in the phase change groove, and a phase change heat absorption material is filled in the phase change groove; the phase change material is a paraffin-based phase change material.
Preferably, the gaps between the chips are filled with buffer glue, the substrate is bonded with fixing glue, one end of the fixing glue is bonded with the plastic package body, and the other end of the fixing glue is bonded with the chips.
Preferably, the mounting groove has been seted up to the upper surface of plastic-sealed body, install the heat-conducting plate in the mounting groove, the heat-conducting plate seals the phase transition groove, the heat-conducting plate is made by the metal material that the heat conductivity is good.
Preferably, the heat-conducting plate is provided with a supporting body, one end of the supporting body is bonded on the heat-conducting plate, the other end of the heat-conducting plate is contacted with the upper surface of the substrate or the chip, and the supporting body is made of a silica gel material.
Preferably, the support body is flat, and a cavity is formed in the support body.
Preferably, the heat conducting plate is a soaking plate, the heat conducting plate is made of stainless steel materials, and the thickness of the heat conducting plate is 0.2mm.
Preferably, the support body is provided with a notch groove at a position close to the heat conducting plate, the surface of the support body is uniformly provided with a flow guide groove, and the flow guide groove is an arrow with an angle of 120 degrees.
Preferably, the semiconductor chip system according to any one of the above descriptions adopts the above package on package structure to package a chip, and the semiconductor chip system includes a plurality of chips and performs package on package.
The invention has the following beneficial effects:
1. according to the semiconductor chip system and the stacking and packaging structure, the phase change groove and the heat conduction plate are arranged, and the phase change material is filled in the phase change groove, so that the effective contact area during heat dissipation can be increased, the thermal resistance during heat dissipation is reduced, and the heat dissipation effect of a packaged chip is improved.
2. According to the semiconductor chip system and the stacking and packaging structure, the supporting body and the cavity are arranged, so that the heat conducting plate can be supported to a certain degree, the possibility of deformation of the heat conducting plate is reduced, meanwhile, the supporting body can also have a certain limiting and fixing effect on the chip in the phase change groove, the chip is prevented from being influenced by external vibration and impact, and meanwhile, the cavity is used for compensating the volume change of the phase change material during the transition between the solid state and the liquid state, so that the influence on the chip is avoided.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a front view of a stacked package structure of the present invention;
FIG. 2 is a partial cross-sectional view of a stacked package structure of the present invention;
FIG. 3 is a schematic diagram of the interior of the stacked package structure of the present invention;
FIG. 4 is a schematic view of the structure of a support body according to the present invention;
FIG. 5 is an enlarged view of a portion of FIG. 2 at A;
in the figure: the chip package structure comprises a substrate 1, solder balls 11, a plastic package body 2, a phase change groove 21, a mounting groove 22, a heat conduction plate 3, a support body 4, a notch groove 41, a diversion groove 42, a cavity 43, fixing glue 5, a chip 6, buffer glue 7, protective glue 8 and welding spots 9.
Detailed Description
The present invention will be further described with reference to the following detailed description so that the technical means, the creation features, the achievement purposes and the effects of the present invention can be easily understood.
As shown in fig. 1 to 5, the semiconductor chip stacking and packaging structure of the present invention includes a substrate 1, a solder ball 11 is disposed on a lower surface of the substrate 1, a chip 6 is mounted on an upper surface of the substrate 1, a solder joint 9 is disposed at a bottom of the chip 6, a protective adhesive 8 is filled at the bottom of the chip 6, a plastic package body 2 is disposed on the upper surface of the substrate 1, the chip 6 is enclosed inside the plastic package body 2, a phase change groove 21 is disposed on the plastic package body 2, the chip 6 is located in the phase change groove 21, the phase change groove 21 is filled with a phase change heat absorption material, and the phase change material is a paraffin-based phase change material;
when the phase change packaging structure works, heat generated by the chip 6 is dissipated into the phase change groove 21, the chip 6 is positioned in the phase change groove 21, and the phase change material is filled in the phase change groove 21, so that the heat generated by the chip 6 is absorbed by the phase change material, the phase change material is converted from a solid state into a liquid state, the chip 6 is fully contacted with the phase change material, the heat generated by the chip 6 is conducted into the phase change material, the heat is dissipated from the phase change groove 21, the phenomenon that the packaged chip 6 is damaged due to overhigh temperature in work is avoided, meanwhile, the deformation material positioned in the phase change groove 21 can fully contact and wrap the part of the chip 6 exposed in the phase change groove 21 by utilizing the characteristics of the deformation material, therefore, the effective contact area of the chip 6 during heat dissipation is increased, and the situation that the heat dissipation structure is directly connected to the chip 6 or the packaging structure is avoided, the heat dissipation structure cannot be in direct contact with the chip 6 and the effective heat dissipation area is small, so that heat generated during the working of the chip 6 cannot be quickly dissipated, meanwhile, the interval between the external heat dissipation structure and the chip 6 and the number of contact surfaces can be further reduced by directly contacting the chip 6 through the phase-change material, so that the external heat dissipation structure can directly contact the chip 6 through the phase-change material without secondary transfer through the plastic packaging body 2, the thermal resistance is effectively reduced, the heat generated by the chip 6 can be conveniently transferred and dissipated, and the over-high temperature of the chip 6 is avoided; simultaneously, the plastic-sealed body 2 that is located on the base plate 1 can protect and fix chip 6, avoids chip 6 to receive external vibration, impact influence when using, leads to chip 6 to damage, and in addition, phase transition groove 21 on the plastic-sealed body 2 seals after pouring into phase change material into, forms confined phase transition groove 21, avoids piling up the phase change material loss in the packaging structure, influences the radiating effect of chip 6 during operation.
As an embodiment of the present invention, a gap between the chips 6 is filled with a buffer glue 7, a fixing glue 5 is bonded on the substrate 1, one end of the fixing glue 5 is bonded to the plastic package body 2, and the other end of the fixing glue 5 is bonded to the chip 6;
through the cushion gum 7 that sets up between chip 6, can alleviate the structural stress that chip 6 packaging in-process produced, avoid chip 6 warpage under its inside structural stress effect, damage, influence the normal use of encapsulation back chip 6, simultaneously, because the encapsulation body 2 does not embed chip 6 in its inside completely, there is the part that exposes in phase transition groove 21 behind chip 6 encapsulation, make chip 6 in the use, receive external vibration, when assaulting the influence, there is the impaired possibility of chip 6, at this moment, in the packaging process, through exerting solid fixed glue 5 on chip 6, make solid fixed glue 5 with chip 6, encapsulation body 2, bond each other between base plate 1 and the adjacent chip 6, it is fixed, thereby effectual improvement chip 6 encapsulates the back, chip 6 is the structural stability in the packaging structure, avoid encapsulated chip 6 to receive external vibration when using, assault the influence, lead to chip 6 to be impaired, simultaneously, through the use of solid fixed glue 5, also can keep the internal phase transition groove 21 of encapsulation body to exist under the condition, guarantee chip 6 encapsulation reliability, thereby encapsulation 6 encapsulation reliability and chip 6 encapsulation reliability.
As an embodiment of the present invention, an installation groove 22 is formed on the upper surface of the plastic package body 2, a heat conducting plate 3 is installed in the installation groove 22, the phase change groove 21 is sealed by the heat conducting plate 3, and the heat conducting plate 3 is made of a metal material with good thermal conductivity;
in the using process, the heat conducting plate 3 arranged on the plastic packaging body 2 seals the phase change groove 21, so that the chip 6 is conveniently packaged, meanwhile, the phase change groove 21 is sealed through the heat conducting plate 3, the heat conducting plate 3 is in direct contact with the phase change material in the phase change groove 21, when the chip 6 is radiated, heat is transferred without passing through the plastic packaging body 2, the heat can be directly transferred from the chip 6 to the phase change material and then to the heat conducting plate 3, then, the heat is radiated into the air through the heat conducting plate 3 or is transferred to an external heat radiation structure, meanwhile, in the heat transfer process, the effective heat radiation area of the packaged chip 6 can be effectively increased through the action of the phase change material and the heat conducting plate 3, the heat radiation effect is improved, in addition, through the action of the phase change material and the heat conducting plate 3, the intermediate links of heat transfer can be reduced, the thermal resistance is reduced, the heat transfer efficiency is improved, the heat radiation of the heat generated by the packaged chip 6 is accelerated, furthermore, the heat conducting plate 3 made of metal materials is adopted, the surface of the packaged chip 6 can be protected to a certain extent, and the scratches or other scratches generated on the surface of the packaged chip 6 can be prevented from influencing the normal work of the packaged chip 6 and the chip 6 in the normal work.
As an embodiment of the present invention, a supporting body 4 is installed on the heat conducting plate 3, one end of the supporting body 4 is bonded to the heat conducting plate 3, the other end of the heat conducting plate 3 contacts the upper surface of the substrate 1 or the chip 6, and the supporting body 4 is made of a silica gel material;
when the phase-change material is used, when the phase-change material absorbs heat and is converted into liquid, the support body 4 can limit and fix the chip 6 in the plastic package body 2 to a certain degree, and when the phase-change material is not used and the operating power of the chip 6 is low, the phase-change material in the phase-change groove 21 is not completely converted into liquid, at the moment, the phase-change material and the support body 4 jointly generate a supporting effect between the heat conduction plate 3 and the substrate 1, so that the heat conduction plate 3 and the chip 6, and the possibility of warping caused by the influence of internal stress in the packaging process can be reduced, meanwhile, the support body 4 is made of a silica gel material, and the support body 4 supports the heat conduction plate 3 and the chip 6, and when the phase-change material absorbs heat and is converted into liquid, the support body 4 can limit and fix the chip 6 in the plastic package body 2 to a certain degree, so that the chip 6 in the packaging structure is prevented from being influenced by external vibration and impact, the chip 6 is damaged or has poor contact, the normal use of the packaged chip 6 is influenced, and meanwhile, and the phase-change material in the phase-change groove 21 is not completely converted into liquid under the condition that the chip 6 is fixed together under the condition that the operating power is not used, and the chip 6, and the chip is guaranteed to limit reliability of the chip 6.
In one embodiment of the present invention, the supporting body 4 is flat, and a cavity 43 is formed inside the supporting body 4;
when the phase change heat conduction plate is used, when the paraffin-based phase change material filled in the phase change groove 21 is changed between a solid state and a liquid state, the volume of the phase change material changes to a certain extent, relatively speaking, the volume of the phase change material in the solid state is smaller than that of the phase change material in the liquid state, meanwhile, in the packaging process, an operator heats the phase change material, so that the phase change material in the liquid state is filled in the phase change groove 21, and no air or gap exists in the phase change groove 21, so that the situation that the chip 6 is damaged due to the adverse effect of the air or gap in the phase change groove 21 on the packaged chip 6 in the subsequent use process is avoided, therefore, by arranging the cavity 43 in the support body 4, and deforming the phase change material in the packaged chip 6, the phase change material in the packaged chip 6 is changed from the liquid state to the solid state, so that the volume is reduced, the support body 4 can deform to a certain extent, and the pressure change caused by the volume change of the phase change material in the phase change groove 21 is adapted to the heat dissipation structure of the heat conduction plate, and the heat conduction plate is avoided by utilizing the pressure change of the cavity 43 in the support body 4, and the cavity 3, and the heat dissipation structure, so that the heat conduction plate 21 has the influence of the phase change structure.
As an embodiment of the present invention, the heat conducting plate 3 is a soaking plate, the heat conducting plate 3 is made of stainless steel material, and the thickness of the heat conducting plate 3 is 0.2mm;
through the arrangement of the heat conducting plate 3, when the heat conducting plate 3 contacts the phase-change material in the phase-change groove 21, the heat conducting plate 3 can utilize the characteristics of the heat conducting plate 3 to balance the temperatures of the phase-change materials in different areas in the phase-change groove 21, so that the temperatures of the phase-change materials in all parts in the phase-change groove 21 are close to the same temperature, the heat dissipation effect is improved, meanwhile, the phenomenon that the phase-change material in the phase-change groove 21 flows unsmoothly is avoided, the local temperature of the packaged chip 6 is overhigh, the chip 6 in an overheating area is damaged, meanwhile, the heat conducting plate 3 made of stainless steel and thin in thickness can be used for lightening the weight and thickness of the packaged chip 6, the application of the packaged chip 6 is facilitated, meanwhile, the heat conducting plate 3 made of the stainless steel can be used for reducing the possibility of scratches or other damages on the surface, the packaged chip 6 is prevented from being damaged, and the normal use is not possible.
As an embodiment of the present invention, a notch groove 41 is formed at a position of the supporting body 4 close to the heat conducting plate 3, a flow guide groove 42 is uniformly formed on the surface of the supporting body 4, and the flow guide groove 42 is an arrow with an angle of 120 °;
when the phase-change material packaging structure is used, the phase-change material in the phase-change groove 21 absorbs heat and is converted into a liquid state, then, under the condition that the chip 6 continues to generate heat, the phase-change material in the phase-change groove 21 flows relatively, meanwhile, the flow guide groove 42 formed in the support groove is utilized to promote the liquid phase-change material to move in the vertical direction, then, the liquid phase-change material flowing to the heat conduction plate 3 is blocked by the heat conduction plate 3, the liquid phase-change material flows from the notch groove 41, the movement in the horizontal direction occurs, the flow of the phase-change material in the phase-change groove 21 is further promoted, the temperature balance of the phase-change material at different areas in the phase-change groove 21 is ensured, the occurrence of local overheating is avoided, and therefore the heat dissipation effect of the packaged chip 6 is improved.
As an embodiment of the present invention, a semiconductor chip system according to any of the above descriptions uses the above package on package structure to package a chip 6, and the semiconductor chip system includes a plurality of chips 6 and performs package on package.
The specific working process is as follows:
when the phase change material heat dissipation device works, heat generated by the chip 6 is dissipated into the phase change groove 21, and the chip 6 is located in the phase change groove 21 and the phase change material is filled in the phase change groove 21, so that the heat generated by the chip 6 is absorbed by the phase change material, the phase change material is converted from a solid state to a liquid state, the chip 6 is fully contacted with the phase change material, and the heat generated by the chip 6 is conducted into the phase change material, so that the heat is dissipated from the phase change groove 21;
the structural stress generated in the packaging process of the chips 6 is relieved through the buffer glue 7 arranged among the chips 6, and the fixing glue 5 is applied on the chips 6 in the packaging process, so that the chips 6, the plastic package body 2, the substrate 1 and the adjacent chips 6 are mutually bonded and fixed by the fixing glue 5;
the phase change groove 21 is sealed by the heat conducting plate 3 arranged on the plastic package body 2, and meanwhile, the phase change groove 21 is sealed by the heat conducting plate 3, so that the heat conducting plate 3 is in direct contact with the phase change material in the phase change groove 21;
when the plastic package body is used, the support body 4 generates a support effect between the heat conduction plate 3 and the substrate 1 and between the heat conduction plate 3 and the chip 6, so that the possibility of deformation of the heat conduction plate 3 is reduced, and the chip 6 in the plastic package body 2 is limited and fixed to a certain extent;
the cavity 43 is formed in the support body 4, and the packaged chip 6 can deform, so that when the volume of the phase-change material in the packaged chip 6 is reduced due to the fact that the phase-change material is changed from a liquid state to a solid state, the support body 4 can deform to a certain extent to adapt to pressure change caused by volume change of the phase-change material in the phase-change groove 21;
when the heat conducting plate 3 contacts the phase change material in the phase change groove 21, the heat conducting plate 3 can balance the temperature of the phase change material in different areas in the phase change groove 21 by utilizing the characteristics of the heat conducting plate 3;
the phase-change material in the phase-change groove 21 absorbs heat and is changed into liquid, then, under the condition that the chip 6 continues to generate heat, the phase-change material in the phase-change groove 21 flows relatively, meanwhile, the flow guide groove 42 formed in the support groove promotes the liquid phase-change material to move in the vertical direction, and then the liquid phase-change material flowing to the heat conduction plate 3 is blocked by the heat conduction plate 3 and flows from the notch groove 41 to move in the horizontal direction.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. The utility model provides a semiconductor chip stacks packaging structure, includes base plate (1), be provided with solder ball (11) on the lower surface of base plate (1), install chip (6) on the upper surface of base plate (1), be provided with plastic-sealed body (2), its characterized in that on the upper surface of base plate (1): the plastic package body (2) is provided with a phase change groove (21), the chip (6) is located in the phase change groove (21), and the phase change groove (21) is filled with a phase change heat absorption material.
2. The semiconductor chip stack package structure of claim 1, wherein: the gap between the chips (6) is filled with buffer glue (7), the substrate (1) is bonded with fixing glue (5), one end of the fixing glue (5) is bonded with the plastic package body (2), and the other end of the fixing glue (5) is bonded with the chips (6).
3. The semiconductor chip stack package structure of claim 1, wherein: mounting groove (22) have been seted up to the upper surface of plastic-sealed body (2), install heat-conducting plate (3) in mounting groove (22).
4. The semiconductor chip stack package structure of claim 3, wherein: the heat conduction plate is characterized in that a supporting body (4) is installed on the heat conduction plate (3), one end of the supporting body (4) is bonded on the heat conduction plate (3), and the other end of the heat conduction plate (3) is in contact with the upper surface of the substrate (1) or the chip (6).
5. The semiconductor chip stack package structure of claim 4, wherein: the supporting body (4) is flat, and a cavity (43) is formed in the supporting body (4).
6. The semiconductor chip stack package structure of claim 4, wherein: the heat conducting plate (3) is a soaking plate, and the heat conducting plate (3) is made of stainless steel materials.
7. The semiconductor chip stack package structure of claim 6, wherein: the supporting body (4) is provided with a notch groove (41) at a position close to the heat conducting plate (3), and the surface of the supporting body (4) is uniformly provided with a flow guide groove (42).
8. A semiconductor chip system according to any of claims 1 to 7, characterized in that: the semiconductor chip system adopts the stacking packaging structure to package the chip (6), and comprises a plurality of chips (6) and is stacked and packaged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210945595.2A CN115312479B (en) | 2022-08-08 | 2022-08-08 | Semiconductor chip system and stacked package structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210945595.2A CN115312479B (en) | 2022-08-08 | 2022-08-08 | Semiconductor chip system and stacked package structure |
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| CN115312479A true CN115312479A (en) | 2022-11-08 |
| CN115312479B CN115312479B (en) | 2023-07-25 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060209516A1 (en) * | 2005-03-17 | 2006-09-21 | Chengalva Suresh K | Electronic assembly with integral thermal transient suppression |
| JP2012109451A (en) * | 2010-11-18 | 2012-06-07 | Denso Corp | Semiconductor device |
| US20120280382A1 (en) * | 2011-05-02 | 2012-11-08 | Samsung Electronics Co., Ltd. | Semiconductor packages |
| CN110010569A (en) * | 2019-05-06 | 2019-07-12 | 扬州大学 | A kind of gradient scale hole for heat dissipation of electronic chip is sintered the preparation method of core soaking sheet heat exchanger and its soaking sheet heat exchanger |
| CN110634819A (en) * | 2019-09-27 | 2019-12-31 | 华天科技（西安）有限公司 | Storage product packaging structure with radiating fins and manufacturing method |
| US20200219789A1 (en) * | 2019-01-07 | 2020-07-09 | Intel Corporation | Thermal management solutions for integrated circuit assemblies using phase change materials |
-
2022
- 2022-08-08 CN CN202210945595.2A patent/CN115312479B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060209516A1 (en) * | 2005-03-17 | 2006-09-21 | Chengalva Suresh K | Electronic assembly with integral thermal transient suppression |
| JP2012109451A (en) * | 2010-11-18 | 2012-06-07 | Denso Corp | Semiconductor device |
| US20120280382A1 (en) * | 2011-05-02 | 2012-11-08 | Samsung Electronics Co., Ltd. | Semiconductor packages |
| US20200219789A1 (en) * | 2019-01-07 | 2020-07-09 | Intel Corporation | Thermal management solutions for integrated circuit assemblies using phase change materials |
| CN110010569A (en) * | 2019-05-06 | 2019-07-12 | 扬州大学 | A kind of gradient scale hole for heat dissipation of electronic chip is sintered the preparation method of core soaking sheet heat exchanger and its soaking sheet heat exchanger |
| CN110634819A (en) * | 2019-09-27 | 2019-12-31 | 华天科技（西安）有限公司 | Storage product packaging structure with radiating fins and manufacturing method |
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